JP5225081B2 - 堆積・エッチングシーケンスを用いたギャップ充填 - Google Patents
堆積・エッチングシーケンスを用いたギャップ充填 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000011800 void material Substances 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical compound [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 claims description 5
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- 239000002019 doping agent Substances 0.000 claims description 5
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- 150000002367 halogens Chemical class 0.000 claims description 5
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- 229910000077 silane Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/31604—Deposition from a gas or vapour
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- H01L21/31612—Deposition of SiO2 on a silicon body
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Description
[0023]本発明の実施形態は、基板の表面内のギャップ内に膜を堆積する方法および装置に関連する。以下に記載された説明は、当分野において幅広い用途を有するシリコン酸化膜の堆積に重点を置きがちであるが、本発明は、以下の考察から明白になるように、何らかの特定の膜組成に限定されない。本発明の技術に従って堆積された膜は、良好なギャップ充填機能を有し、例えば、STI構造内で遭遇する高アスペクト比のギャップを充填することが可能である。本発明の方法によって堆積された膜は、種々の集積回路の製作における使用に適しており、特に、100nm技術(0.100μm)、または、それより小さい、例えば、65nm(0.065μm)技術、あるいはそれ以下の技術において、ギャップを充填する際に有用である。
該堆積/スパッタ比は、堆積の進展に伴って増加し、スパッタリングの進展に伴って減少する。「最終的な堆積速度」とは、D/Sの定義において用いる場合、堆積およびスパッタリングが同時に起きているときに測定される堆積速度を指す。該「全体的なスパッタ速度」は、堆積ガスなしでプロセスレシピが実行された場合に測定されるスパッタ速度であり、該プロセスチャンバ内の圧力は、堆積中の圧力および全面的な熱酸化物上で測定されるスパッタ速度に対して調整される。
E/D={(ソースオンリーの堆積速度)−(最終的な堆積速度)}/(ソースオンリーの堆積速度)
であり、これは、スパッタリングの進展に伴って増加し、堆積の進展に伴って減少する。ここでもまた、「最終的な堆積速度」は、E/Dの定義において用いる場合、堆積およびスパッタリングが同時に起きているときに測定される堆積速度を指す。しかし、「ソースオンリーの堆積速度」は、該プロセスレシピがスパッタリングなしで実行された場合に測定される堆積速度を指す。本明細書において、本発明の実施形態は、D/S比の観点で説明する。D/SおよびE/Dは正確な逆数ではないが、逆相関しており、これらの間の変換は、当業者には理解されるであろう。
[0033]本発明の実施形態はプロセス空間で提供され、そこで、堆積/エッチング/堆積プロセスの最初の堆積が、該ギャップを塞ぐための臨界厚さを超える厚さを有する膜を堆積する。このことの結果は、介在ボイドを、堆積された材料中に形成することができるが、このボイドは、次のエッチングステップにさらされ、最終的には、堆積/エッチングサイクルにおける次のまたは後の堆積ステップによって充填されるということである。所与のギャップに対する臨界厚さを超える厚さまでの堆積は、従来、該ボイドの形成のため、好ましくないものと考えられてきたが、本発明者等は、本明細書に記載された技術から生じるより大きなプロセス空間の利用可能性は、該ボイドに対処する必要性を弱めるのに十分に有利であることを見出した。
(Tdep (open)は、RdepDにほぼ等しい)
ここで、Rdepは、正の実数の比例定数である。全面的な膜エッチング量Eおよび空きフィールドエッチング量Tetch (open)は同様に、
(Tetch (open)は、RetchEにほぼ等しい)
ここで、Retchは、正の実数の比例定数である。該エッチングは、Tetch (open)=Tdep (open)の場合、すなわち、
E=RdepD/Retch
の場合に、該空きフィールドカバレージをゼロに低減する。このグラフにおいて、該エッチングが、該空きフィールドカバレージをゼロに低減する量未満にする制約は、傾斜(Rdep/Retch)を有する線の下の該面の部分によって画成される。
[0047]本発明者は、カリフォルニア州のサンタクララにあるAPPLIED MATERIALS,INC.によって製造されているULTIMA(商標)システムによって本発明の実施形態を実施し、その全般的な説明は、1996年7月15日に提出された、Fred C.Redeker、Farhad Moghadam、Hirogi Hanawa,Tetsuya Ishikawa,Dan Maydan,Shijian Li,Brian Lue,Robert Steger,Yaxin Wang,Manus WongおよびAshok Sinhaの「SYMMETRIC TUNABLE INDUCTIVELY COUPLEDHDP-CVD REACTOR」というタイトルの同一出願人による米国特許第6,170,428号に記載されており、該明細書の全ての開示を本明細書に参照によって組み入れる。該システムの要旨は、以下に、図7Aおよび図7Bに関連して記載されている。図7Aは、一実施形態におけるそのようなHDP−CVDシステム710の構造を概略的に図示している。システム710は、チャンバ713と、真空システム770と、ソースプラズマシステム780Aと、バイアスプラズマシステム780Bと、ガス送給システム733と、リモートプラズマ洗浄システム750とを含む。
Claims (14)
- 基板処理チャンバ内に配置された基板上に膜を堆積する方法であって、前記基板が、隣接する隆起した面の間に形成されたギャップを有する方法であって、
第1の前駆物質堆積ガスのフローを前記基板処理チャンバに供給するステップと、
前記第1の前駆物質堆積ガスのフローから第1の高密度プラズマを形成し、膜の第1部分の堆積厚さが、前記ギャップ内にボイドを形成する臨界堆積厚さよりも大きくなるように、同時に起こる堆積およびスパッタリング要素を有する第1の堆積プロセスによって、前記基板上および前記ギャップ内に、前記膜の第1部分を堆積するステップであって、前記膜の第1部分が、前記ギャップを臨界厚さの5%より大きく塞ぐ前記臨界厚さを超える厚さで、前記基板上および前記ギャップ内に堆積されるステップと、
前記膜の第1部分の大部分をエッチバックして、前記ボイドを開口するステップと、
第2の前駆物質堆積ガスのフローを前記基板に供給するステップと、
前記第2の前駆物質堆積ガスのフローから第2の高密度プラズマを形成して、同時に起こる堆積およびスパッタリング要素を有する第2の堆積プロセスによって、前記基板上および前記開口されたボイド内に、前記膜の第2部分を堆積するステップと、
を備える方法。 - 前記膜の第1部分の大部分をエッチバックするステップが、前記膜に対して腐食性のエッチャントガスのフローから、前記処理チャンバ内で第3の高密度プラズマを形成する工程を備える、請求項1に記載の方法。
- 前記膜の第1部分の大部分をエッチバックするステップが、前記基板に電気的バイアスを印加する工程をさらに備える、請求項2に記載の方法。
- 前記第1および第2の前駆物質堆積ガスがそれぞれ、シリコン含有ガスおよび酸素含有ガスを備え、それによって、前記膜がシリコン酸化膜を備え、および前記エッチャントガスがハロゲン含有ガスを備える、請求項2に記載の方法。
- 前記ハロゲン含有ガスがフッ素含有ガスを備える、請求項4に記載の方法。
- 前記第1の前駆物質堆積ガスおよび第2の前駆物質堆積ガスの少なくとも一方が、ドーパント含有ガスをさらに備える、請求項4に記載の方法。
- 前記第1の前駆物質堆積ガスおよび第2の前駆物質堆積ガスの少なくとも一方が、分子状水素H2を備える、請求項4に記載の方法。
- 前記分子状水素H2が、500sccmを超える流量で前記プロセスチャンバに提供される、請求項7に記載の方法。
- 前記膜の第1部分が、前記ギャップを前記臨界厚さの10%より大きく塞ぐ前記臨界厚さを超える厚さで、前記基板上および前記ギャップ内に堆積される、請求項1に記載の方法。
- 前記ギャップが、隣接する隆起した面の間に形成された複数のギャップを備え、第1のギャップが、第2のギャップの幅の少なくとも5倍の幅を有する、請求項1に記載の方法。
- 前記ギャップが、少なくとも5:1のアスペクト比と、100nm未満の幅とを有する、請求項1に記載の方法。
- 前記ギャップが、少なくとも6:1のアスペクト比と、65nm未満の幅とを有する、請求項1に記載の方法。
- 前記膜の第2部分が、前記ボイドが再び塞がれるまで、前記基板上および前記開口されたボイド内に堆積され、
前記膜の第2部分の大部分をエッチバックして、前記ボイドを開口するステップと、
第3の前駆物質堆積ガスのフローを前記基板処理チャンバに提供するステップと、
前記第3の前駆物質堆積ガスのフローから第3の高密度プラズマを形成して、同時に起こる堆積およびスパッタリング要素を有する第3の堆積プロセスによって、前記基板上および前記開口されたボイド内に前記膜の第3部分を堆積するステップと、
をさらに備える、請求項1に記載の方法。 - 基板処理チャンバ内に配置された基板上にシリコン酸化膜を堆積する方法であって、前記基板が、前記基板上の空き領域および密集領域内に分布する複数のギャップを有し、前記密集領域内の少なくとも1つのギャップが、5:1より大きいアスペクト比と100nm未満の幅とを有し、前記空き領域内の少なくとも1つのギャップが、前記密集領域内の少なくとも1つのギャップの幅の少なくとも5倍の幅を有する方法であって、
SiH4、O2および第1の流動ガスからなる第1のフローを前記基板処理チャンバに供給するステップと、
前記SiH4、O2および第1の流動ガスからなる第1のフローから第1の高密度プラズマを形成して、前記密集領域内の少なくとも1つのギャップ内のボイドについて、膜の第1部分の堆積厚さが、前記ボイドを形成するのに必要な臨界堆積厚さよりも大きくなるように、同時に起こる堆積およびスパッタリング要素を有する第1の堆積プロセスによって、前記基板上および前記ギャップ内に、前記シリコン酸化膜の第1部分を堆積するステップであって、前記シリコン酸化膜の第1部分が、前記少なくとも1つのギャップを臨界厚さの5%より大きく塞ぐ前記臨界厚さを超える厚さで、前記基板上および前記ギャップ内に堆積されるステップと、
フッ素含有ガスの第1のフローを前記基板処理チャンバに供給するステップと、
前記フッ素含有ガスの第1のフローから第2の高密度プラズマを形成し、前記シリコン酸化膜の第1部分の大部分をエッチバックして、前記ボイドを開口するステップと、
前記シリコン酸化膜の第1部分がエッチバックされている間、前記基板にバイアスを印加するステップと、
SiH4、O2および第2の流動ガスからなる第2のフローを前記基板処理チャンバに供給するステップと、
前記SiH4、O2および第2の流動ガスからなる第2のフローから第3の高密度プラズマを形成して、同時に起こる堆積およびスパッタリング要素を有する第2の堆積プロセスによって、前記基板上および前記開口されたボイド内に、前記シリコン酸化膜の第2部分を堆積するステップと、
を備える方法。
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CN101278380A (zh) | 2008-10-01 |
WO2007001878A3 (en) | 2007-08-09 |
US20060292894A1 (en) | 2006-12-28 |
CN101278380B (zh) | 2012-05-23 |
JP2008547224A (ja) | 2008-12-25 |
US7329586B2 (en) | 2008-02-12 |
WO2007001878A2 (en) | 2007-01-04 |
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