JP5217245B2 - Silicon single crystal wafer and manufacturing method thereof - Google Patents
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- JP5217245B2 JP5217245B2 JP2007136287A JP2007136287A JP5217245B2 JP 5217245 B2 JP5217245 B2 JP 5217245B2 JP 2007136287 A JP2007136287 A JP 2007136287A JP 2007136287 A JP2007136287 A JP 2007136287A JP 5217245 B2 JP5217245 B2 JP 5217245B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 84
- 229910052710 silicon Inorganic materials 0.000 title claims description 84
- 239000010703 silicon Substances 0.000 title claims description 84
- 239000013078 crystal Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 138
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 238000001816 cooling Methods 0.000 claims description 31
- 229910052736 halogen Inorganic materials 0.000 claims description 30
- 150000002367 halogens Chemical class 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000002244 precipitate Substances 0.000 claims description 9
- 229910052724 xenon Inorganic materials 0.000 claims description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims description 3
- 238000001739 density measurement Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 33
- 239000010410 layer Substances 0.000 description 22
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 238000001556 precipitation Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000005247 gettering Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Description
本発明は、シリコン単結晶ウェーハ及びその製造方法に関し、特に薄膜デバイスにも適したシリコン単結晶ウェーハ及びその製造方法に関するものである。 The present invention relates to a silicon single crystal wafer and a manufacturing method thereof, and more particularly to a silicon single crystal wafer suitable for a thin film device and a manufacturing method thereof.
従来、ゲッタリング能力が優れたシリコン単結晶ウェーハの製造方法として、非酸化性雰囲気にて１１００℃以上の温度で熱処理することにより、アニールウェーハ表層近くのＣＯＰ（Crystal Originated Particle）を消滅させることが提案されている（特許文献１参照）。 Conventionally, as a method for producing a silicon single crystal wafer having excellent gettering ability, COP (Crystal Originated Particles) near the surface of the annealed wafer can be eliminated by performing heat treatment at a temperature of 1100 ° C. or higher in a non-oxidizing atmosphere. It has been proposed (see Patent Document 1).
ただしこの方法によると、酸素の外方拡散も同時に起こるため、この方法により得られるウェーハにおいては、酸素析出物（ＢＭＤ）が存在しない領域がウェーハ表面から１０μｍ以上形成されることになる。 However, according to this method, oxygen out-diffusion also occurs at the same time. Therefore, in the wafer obtained by this method, a region where oxygen precipitates (BMD) are not present is formed by 10 μm or more from the wafer surface.
ところで、半導体デバイスは、近年益々デバイス自体の薄膜化が進み、これにともない上述したゲッタリング層がよりデバイス活性層に近い領域に存在するウェーハが求められている。 By the way, in recent years, semiconductor devices have been increasingly thinned, and accordingly, a wafer in which the above-described gettering layer exists in a region closer to the device active layer is required.
しかしながら、上記従来の製造方法では、ゲッタリング能力を向上させるための熱処理によって、酸素析出物が存在しない領域がウェーハ表面から１０μｍ以上も形成されてしまうので、薄膜デバイスにおいてもゲッタリング効果を有効に発揮するウェーハの製造方法の開発が希求されていた。 However, in the above-described conventional manufacturing method, the heat treatment for improving the gettering capability results in the formation of an area where oxygen precipitates do not exist more than 10 μm from the wafer surface. There has been a demand for the development of a method for producing a wafer to be demonstrated.
本発明が解決しようとする課題は、薄膜デバイスに対してもゲッタリング効果が有効に発揮されるシリコン単結晶ウェーハ及びその製造方法を提供することである。 The problem to be solved by the present invention is to provide a silicon single crystal wafer that effectively exhibits a gettering effect even for a thin film device and a method for manufacturing the same.
本発明は、チョクラルスキー法によって育成された単結晶から加工されたシリコンウェーハであって、初期格子間酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）以上のシリコンウェーハに、アルゴンガスのガス雰囲気中において、１１５０℃以上、シリコン融点以下の熱処理温度で、５秒以下の急速昇降温熱処理を施し、前記シリコンウェーハの表面から０．６μｍ〜２．６μｍの深さに無欠陥層を形成することを特徴とする。 The present invention provides a silicon wafer which has been processed from a single crystal grown by the Czochralski method, the initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc ( ASTM F-121,1979) or more silicon the wafer, in a gas atmosphere of argon gas, 1150 ° C. or more, a silicon melting point below the heat treatment temperature, and facilities the rapid lifting thermal treatment of 5 seconds or less, the depth of 0.6μm~2.6μm from the surface of the silicon wafer In addition, a defect-free layer is formed .
本発明は、アルゴンガスのガス雰囲気中において、１１５０℃以上、シリコン融点以下の熱処理温度で、５秒以下の急速昇降温熱処理を施すので、シリコンウェーハの表面から０．６μｍ〜２．６μｍの表層領域ではあるがＣＯＰ及び酸素析出核が消滅し、この領域において高い酸化膜耐圧を示すことになる。また、初期格子間酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃ以上という高酸素濃度のウェーハを用いるので、ウェーハは表面から１０μｍ程度の領域では酸素安定析出核が存在することになる。 The present invention, in the gas atmosphere of argon gas, 1150 ° C. or more, a silicon melting point below the heat treatment temperature, so subjected to rapid lifting thermal treatment of 5 seconds or less, the surface layer of 0.6μm~2.6μm from the surface of the silicon wafer Although it is a region, COP and oxygen precipitation nuclei disappear, and a high oxide film breakdown voltage is exhibited in this region. In addition, since a wafer having a high oxygen concentration with an initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc or more is used, oxygen stable precipitation nuclei are present in the region of about 10 μm from the surface.
したがって、ウェーハ表層は結晶欠陥が消滅する一方で、デバイス活性領域の直下にゲッタリング源となる安定な酸素析出核が存在するシリコン単結晶ウェーハを得ることができる。 Accordingly, a silicon single crystal wafer in which stable oxygen precipitation nuclei serving as a gettering source exist immediately below the device active region can be obtained while crystal defects disappear on the wafer surface layer.
図１は、本発明の実施形態に係るシリコン単結晶ウェーハの製造方法を示す工程図である。本実施形態に係るシリコン単結晶ウェーハの製造方法では、初期格子間酸素濃度が高酸素濃度、すなわち１．４×１０１８ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）以上となるＣＺ法条件でシリコンインゴッドを育成する。シリコン育成時の酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃに満たないと薄膜デバイス活性層の直下に、ゲッタリング源となる安定な酸素析出物が有効数存在しないからである。 FIG. 1 is a process diagram showing a method for producing a silicon single crystal wafer according to an embodiment of the present invention. In the method for producing a silicon single crystal wafer according to the present embodiment, silicon is formed under the CZ method conditions in which the initial interstitial oxygen concentration is high oxygen concentration, that is, 1.4 × 10 18 atoms / cc (ASTM F-121, 1979) or more. Nurturing ingots. This is because if the oxygen concentration at the time of silicon growth is less than 1.4 × 10 18 atoms / cc, an effective number of stable oxygen precipitates serving as a gettering source does not exist directly under the thin film device active layer.
このシリコン育成時において、窒素をシリコン単結晶中に１×１０13〜１×１０15ａｔｏｍｓ／ｃｃドープすると、無欠陥領域がさらに拡大するので好ましいといえる。 At the time of growing the silicon, it is preferable to dope nitrogen into the silicon single crystal at 1 × 10 13 to 1 × 10 15 atoms / cc because the defect-free region is further expanded.
次にシリコンインゴッドをウェーハに加工する。このウェーハ加工は特に限定されず、一般的な加工法を採用することができる。 Next, the silicon ingot is processed into a wafer. This wafer processing is not particularly limited, and a general processing method can be adopted.
ウェーハ加工したのち、１１５０℃以上、シリコンの融点（１４１０℃）以下の温度で、１０秒以下の急速昇降温熱処理を施す。この急速昇降温熱処理は、非酸化性雰囲気、たとえばアルゴンガス，窒素ガス，水素ガスまたはこれらの混合ガス雰囲気中にて行う。 After the wafer processing, a rapid temperature raising and lowering heat treatment is performed for 10 seconds or less at a temperature not lower than 1150 ° C. and not higher than the melting point of silicon (1410 ° C.). This rapid heating / cooling heat treatment is performed in a non-oxidizing atmosphere such as argon gas, nitrogen gas, hydrogen gas, or a mixed gas atmosphere thereof.
本実施形態の急速昇降温熱処理は、ハロゲンランプを熱源としたハロゲンランプ熱処理炉、キセノンランプを熱源としたフラッシュランプ熱処理炉またはレーザを熱源としたレーザ熱処理炉などを用いることができ、ハロゲンランプ熱処理炉を用いる場合は０．１〜１０秒、フラッシュランプ熱処理炉を用いる場合は０．１秒以下、レーザ熱処理炉を用いる場合は０．１秒以下とすることが好ましい。 The rapid heating / cooling heat treatment of this embodiment can use a halogen lamp heat treatment furnace using a halogen lamp as a heat source, a flash lamp heat treatment furnace using a xenon lamp as a heat source, a laser heat treatment furnace using a laser as a heat source, or the like. When a furnace is used, it is preferably 0.1 to 10 seconds, when a flash lamp heat treatment furnace is used, 0.1 seconds or less, and when a laser heat treatment furnace is used, it is preferably 0.1 seconds or less.
以上の急速昇降温熱処理を施すことで、ウェーハ表面に無欠陥層が形成されると同時にデバイス活性層の直下（ウェーハ表面から１０〜２０μｍ）にゲッタリング源となる酸素析出物が存在するウェーハを得ることができる。 By performing the above rapid heating and cooling heat treatment, a defect-free layer is formed on the wafer surface, and at the same time, a wafer in which oxygen precipitates serving as a gettering source are present immediately below the device active layer (10 to 20 μm from the wafer surface). Can be obtained.
これに加え、急速昇降温熱処理を施したウェーハの表面にシリコンエピタキシャル層を成長させることもできる。急速昇降温熱処理を施したウェーハ表面は無欠陥層が形成されているので、ここにエピタキシャル層を形成することで無欠陥層をさらに拡大または無欠陥層の厚さを調整することができる。 In addition to this, a silicon epitaxial layer can be grown on the surface of the wafer that has been subjected to rapid heating and cooling heat treatment. Since the defect-free layer is formed on the wafer surface that has been subjected to the rapid heating / cooling heat treatment, the defect-free layer can be further expanded or the thickness of the defect-free layer can be adjusted by forming an epitaxial layer here.
さらに、急速昇降温熱処理を施したのち、非酸化性雰囲気にて１０００℃〜１３００℃×３０〜６０分程度の追加熱処理を施すこともできる。この追加熱処理を施すことで、デバイス活性層の直下に存在する酸素析出物のサイズを増大させることができ、また無欠陥層の厚さも調整することができる。 Further, after the rapid temperature raising and lowering heat treatment, an additional heat treatment of about 1000 ° C. to 1300 ° C. × 30 to 60 minutes can be performed in a non-oxidizing atmosphere. By performing this additional heat treatment, the size of oxygen precipitates existing directly under the device active layer can be increased, and the thickness of the defect-free layer can be adjusted.
以下の実施例において、初期格子間酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）以上の条件で育成したウェーハに、１０秒以下の急速昇降温熱処理を施すと、デバイス活性領域である表層において高い酸化膜耐圧を示すとともに、デバイス活性領域の直下にゲッタリング源となり得る酸素析出核が存在することを、比較例とともに確認した。 In the following examples, when a wafer grown under conditions of an initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc (ASTM F-121, 1979) or higher is subjected to rapid heating / cooling heat treatment for 10 seconds or less, It was confirmed together with a comparative example that a high oxide film breakdown voltage was exhibited in the surface layer, which was the device active region, and oxygen precipitation nuclei that could serve as a gettering source were present directly under the device active region.
《実施例１》
直径２００ｍｍのシリコン単結晶インゴット（初期格子間酸素濃度が１４．５×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９），比抵抗が１０〜２０Ωｃｍ，窒素ドープなし）からスライスして鏡面加工を施した複数のシリコンウェーハに、ハロゲンランプを熱源とする熱処理炉を用いて１１５０℃×３秒の熱処理を施した。
Example 1
Slicing from 200 mm diameter silicon single crystal ingot (initial interstitial oxygen concentration is 14.5 × 10 17 atoms / cc (ASTM F-121, 1979), specific resistance is 10-20 Ωcm, no nitrogen doping) and mirror finish A plurality of silicon wafers were subjected to heat treatment at 1150 ° C. for 3 seconds using a heat treatment furnace using a halogen lamp as a heat source.
この熱処理が施された複数のシリコンウェーハのそれぞれに対し、０．２μｍ程度ずつ再研磨し、表面からの再研磨量が異なるウェーハを複数枚準備した。これら表面からの再研磨量が異なるウェーハに膜厚が２５ｎｍの酸化膜と、面積が８ｍｍ２の測定電極（リンをドープしたポリシリコン電極）としたＭＯＳキャパシタを形成し、１１ＭＶ／ｃｍの判定電界の条件（電流値が１０−３Ａを超えるとブレイクダウンとみなす。）で酸化膜耐圧特性ＴＺＤＢを測定し、判定電界をクリアしたＭＯＳキャパシタを良品とした。良品率が９０％以上となった最大の再研磨量（以下、無欠陥深さとも言う。）は、１．７μｍであった。 Each of the plurality of silicon wafers subjected to the heat treatment was repolished by about 0.2 μm, and a plurality of wafers having different amounts of repolishing from the surface were prepared. A MOS capacitor having an oxide film having a film thickness of 25 nm and a measurement electrode having an area of 8 mm 2 (polysilicon electrode doped with phosphorus) is formed on these wafers having different amounts of regrinding from the surface, and a judgment electric field of 11 MV / cm is formed. The oxide film withstand voltage characteristic TZDB was measured under the following conditions (when the current value exceeded 10 −3 A, it was regarded as a breakdown), and a MOS capacitor that cleared the judgment electric field was determined as a good product. The maximum re-polishing amount (hereinafter also referred to as defect-free depth) at which the yield rate was 90% or more was 1.7 μm.
一方、上記の急速昇降温熱処理を施したシリコンウェーハに、さらに１０００℃×１６時間の熱処理を施したのち、このウェーハを劈開し、２μｍのライトエッチング（ｗｒｉｇｈｔ ｅｔｃｈｉｎｇ）を実施した。このウェーハ表面から１０〜２０μｍの位置に存在するエッチングピットを光学顕微鏡で測定し、ＢＭＤ密度を算出したところ、２．１×１０５個／ｃｍ２であった。 On the other hand, the silicon wafer subjected to the above rapid heating / cooling heat treatment was further subjected to a heat treatment of 1000 ° C. × 16 hours, and then the wafer was cleaved and 2 μm light etching was performed. The etching pits present at a position of 10 to 20 μm from the wafer surface were measured with an optical microscope, and the BMD density was calculated to be 2.1 × 10 5 pieces / cm 2 .
これら無欠陥深さとＢＭＤ密度の結果を、酸素濃度、窒素濃度及び急速昇降温熱処理条件とともに表１に示す。 The results of these defect-free depth and BMD density are shown in Table 1 together with the oxygen concentration, nitrogen concentration, and rapid heating / cooling heat treatment conditions.
《実施例２》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２２．１×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは１．８μｍ、ＢＭＤ密度は４．９×１０５個／ｃｍ２であった。
Example 2
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 22.1 × 10 17 atoms / cc (ASTM F-121, 1979), and the rapid heating / cooling heat treatment conditions using a halogen lamp were 1200 ° C. × 3 A wafer was produced under the same conditions as in Example 1 except that the second was set, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 1.8 μm, and the BMD density was 4.9 × 10 5 pieces / cm 2 .
《実施例３》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．６×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにキセノンランプを用いたフラッシュランプ熱処理炉、急速昇降温熱処理条件を１２５０℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは０．６μｍ、ＢＭＤ密度は３８．０×１０５個／ｃｍ２であった。
Example 3
In contrast to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.6 × 10 17 atoms / cc (ASTM F-121, 1979), and a flash lamp heat treatment furnace using a xenon lamp instead of a halogen lamp, A wafer was produced under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment conditions were 1250 ° C. × 0.001 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 0.6 μm, and the BMD density was 38.0 × 10 5 pieces / cm 2 .
《実施例４》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２１．８×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにキセノンランプを用いたフラッシュランプ熱処理炉、急速昇降温熱処理条件を１３００℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは０．８μｍ、ＢＭＤ密度は５２．０×１０５個／ｃｍ２であった。
Example 4
In contrast to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 21.8 × 10 17 atoms / cc (ASTM F-121, 1979), a flash lamp heat treatment furnace using a xenon lamp instead of a halogen lamp, A wafer was produced under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment conditions were 1300 ° C. × 0.001 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 0.8 μm, and the BMD density was 52.0 × 10 5 pieces / cm 2 .
《実施例５》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．４×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにレーザを用いたレーザ熱処理炉、急速昇降温熱処理条件を１３００℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは０．８μｍ、ＢＭＤ密度は２９．０×１０５個／ｃｍ２であった。
Example 5
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.4 × 10 17 atoms / cc (ASTM F-121, 1979), a laser heat treatment furnace using a laser instead of a halogen lamp, and rapid raising and lowering A wafer was fabricated under the same conditions as in Example 1 except that the thermal heat treatment conditions were 1300 ° C. × 0.001 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 0.8 μm, and the BMD density was 29.0 × 10 5 pieces / cm 2 .
《実施例６》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２２．３×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにレーザを用いたレーザ熱処理炉、急速昇降温熱処理条件を１３５０℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは１．０μｍ、ＢＭＤ密度は６２．０×１０５個／ｃｍ２であった。
Example 6
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 22.3 × 10 17 atoms / cc (ASTM F-121, 1979), a laser heat treatment furnace using a laser instead of a halogen lamp, rapid raising and lowering A wafer was fabricated under the same conditions as in Example 1 except that the thermal heat treatment conditions were 1350 ° C. × 0.001 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 1.0 μm, and the BMD density was 62.0 × 10 5 pieces / cm 2 .
《実施例７》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．３×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を１．５×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×５秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．６μｍ、ＢＭＤ密度は５８．０×１０５個／ｃｍ２であった。
Example 7
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.3 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 1.5 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment conditions using the substrate were 1200 ° C. × 5 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 2.6 μm, and the BMD density was 58.0 × 10 5 pieces / cm 2 .
《実施例８》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．７×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を８５．８×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×５秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．３μｍ、ＢＭＤ密度は５１．０×１０５個／ｃｍ２であった。
Example 8
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.7 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 85.8 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment conditions using the substrate were 1200 ° C. × 5 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 2.3 μm, and the BMD density was 51.0 × 10 5 pieces / cm 2 .
《実施例９》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２１．１×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を２．５×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．１μｍ、ＢＭＤ密度は６７．０×１０５個／ｃｍ２であった。
Example 9
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 21.1 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 2.5 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment condition using was 1200 ° C. × 3 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 2.1 μm, and the BMD density was 67.0 × 10 5 pieces / cm 2 .
《実施例１０》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２１．９×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を７５．８×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは１．７μｍ、ＢＭＤ密度は６１．０×１０５個／ｃｍ２であった。
Example 10
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 21.9 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 75.8 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment condition using was 1200 ° C. × 3 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 1.7 μm, and the BMD density was 61.0 × 10 5 pieces / cm 2 .
《実施例１１》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２０．４×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を３４．６×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプの代わりにキセノンランプを用いたフラッシュランプ熱処理炉、急速昇降温熱処理条件を１３００℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは０．８μｍ、ＢＭＤ密度は４９．０×１０５個／ｃｍ２であった。
Example 11
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 20.4 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 34.6 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that a flash lamp heat treatment furnace using a xenon lamp instead of 1 and the rapid heating / cooling heat treatment conditions were set to 1300 ° C. × 0.001 seconds, defect-free depth and BMD density Was measured. As a result, the defect-free depth was 0.8 μm, and the BMD density was 49.0 × 10 5 pieces / cm 2 .
《実施例１２》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を２１．０×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を８１．５×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプの代わりにレーザを用いたレーザ熱処理炉、急速昇降温熱処理条件を１３００℃×０．００１秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは０．８μｍ、ＢＭＤ密度は５２．０×１０５個／ｃｍ２であった。
Example 12
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 21.0 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 81.5 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the laser heat treatment furnace using a laser instead of 1 and the rapid heating / cooling heat treatment conditions were 1300 ° C. × 0.001 seconds, and the defect-free depth and BMD density were measured. did. As a result, the defect-free depth was 0.8 μm, and the BMD density was 52.0 × 10 5 pieces / cm 2 .
《比較例１》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１３．１×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．１μｍであったが、ＢＭＤ密度は１．０×１０４個／ｃｍ２に満たなかった。
<< Comparative Example 1 >>
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 13.1 × 10 17 atoms / cc (ASTM F-121, 1979), and the rapid heating / cooling heat treatment conditions using a halogen lamp were 1200 ° C. × 3 A wafer was produced under the same conditions as in Example 1 except that the second was set, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 2.1 μm, but the BMD density was less than 1.0 × 10 4 pieces / cm 2 .
《比較例２》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１３．２×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を３５．０×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×５秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．６μｍであったが、ＢＭＤ密度は１．０×１０４個／ｃｍ２に満たなかった。
<< Comparative Example 2 >>
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 13.2 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 35.0 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 1 except that the rapid heating / cooling heat treatment conditions using the substrate were 1200 ° C. × 5 seconds, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 2.6 μm, but the BMD density was less than 1.0 × 10 4 pieces / cm 2 .
《比較例３》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．８×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプを用いた急速昇降温熱処理条件を１１００℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、ＢＭＤ密度は６．４×１０５個／ｃｍ２であったが、無欠陥深さは０μｍであった。
<< Comparative Example 3 >>
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.8 × 10 17 atoms / cc (ASTM F-121, 1979), and the rapid heating / cooling heat treatment conditions using a halogen lamp were 1100 ° C. × 3 A wafer was produced under the same conditions as in Example 1 except that the second was set, and the defect-free depth and BMD density were measured. As a result, the BMD density was 6.4 × 10 5 pieces / cm 2 , but the defect-free depth was 0 μm.
《比較例４》
実施例１に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１５．２×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプを用いた急速昇降温熱処理条件を１１２５℃×３秒としたこと以外は、実施例１と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、ＢＭＤ密度は５．３×１０５個／ｃｍ２であったが、無欠陥深さは０μｍであった。
<< Comparative Example 4 >>
Compared to Example 1, the initial interstitial oxygen concentration of the silicon single crystal ingot was 15.2 × 10 17 atoms / cc (ASTM F-121, 1979), and the rapid heating / cooling heat treatment condition using a halogen lamp was 1125 ° C. × 3 A wafer was produced under the same conditions as in Example 1 except that the second was set, and the defect-free depth and BMD density were measured. As a result, the BMD density was 5.3 × 10 5 pieces / cm 2 , but the defect-free depth was 0 μm.
実施例１〜１２の結果から、初期格子間酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）以上のウェーハに、１１５０℃以上、１３５０℃以下の温度で３秒以下の熱処理を施せば、得られたウェーハには約３μm以下の無欠陥層が形成されることが確認された。
From the results of Examples 1 to 12, a wafer having an initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc (ASTM F-121, 1979) or more is 3 seconds or less at a temperature of 1150 ° C. or more and 1350 ° C. or less. It was confirmed that a defect-free layer of about 3 μm or less was formed on the obtained wafer by performing the heat treatment.
すなわち、急速昇降温熱処理によって、極めて表層領域のみではあるがＣＺ法による引き上げ時に形成されたGrown-in(Void)欠陥ＣＯＰと酸素析出核が消滅し、この領域では高い酸化膜耐圧を示すことが確認された。 That is, the rapid temperature increase / decrease heat treatment eliminates the Grown-in (Void) defect COP and the oxygen precipitation nucleus formed at the time of pulling by the CZ method, although it is only in the surface layer region, and shows a high oxide film breakdown voltage in this region. confirmed.
一方、ウェーハ表面から１０〜２０μmの位置では、結晶育成時に高酸素であったために、成長した酸素安定析出核が存在しており、これが１０００℃×１６時間の熱処理で顕在化することが確認された。 On the other hand, at the position of 10 to 20 μm from the wafer surface, since oxygen was high at the time of crystal growth, the grown oxygen stable precipitation nuclei existed, and it was confirmed that this was manifested by heat treatment at 1000 ° C. × 16 hours. It was.
このように、実施例１〜１２のウェーハ最表層では欠陥が消滅する一方で、デバイス活性領域の直下に安定な酸素析出核（ゲッタリング源）が存在する極めて好ましいウェーハを得ることができた。また、フラッシュランプ熱処理炉やレーザ熱処理炉を用いた場合、より浅い無欠陥層幅を得ることが可能であることも確認できた。 As described above, while the defects disappeared in the outermost surface layers of Examples 1 to 12, it was possible to obtain a highly preferable wafer in which stable oxygen precipitation nuclei (gettering sources) existed immediately below the device active region. It was also confirmed that a shallower defect-free layer width can be obtained when a flash lamp heat treatment furnace or a laser heat treatment furnace is used.
これに対し、比較例１及び２では、結晶に存在する初期酸素濃度が低く、結晶育成時に十分安定な析出核サイズとなっていないため、急速昇降温処理や１０００℃×１６時間の熱処理を施しても安定な酸素析出核が存在しないことが確認された。 On the other hand, in Comparative Examples 1 and 2, since the initial oxygen concentration present in the crystal is low and the precipitation nucleus size is not sufficiently stable at the time of crystal growth, rapid heating and cooling treatment or heat treatment at 1000 ° C. × 16 hours is performed. However, it was confirmed that there are no stable oxygen precipitation nuclei.
さらに、比較例３及び４では、急速昇降温熱処理の温度が低いため、急速昇降温熱処理にて欠陥の消滅が十分ではなく、ウェーハ最表面から酸化膜耐圧の歩留まりが劣化することが確認された。 Furthermore, in Comparative Examples 3 and 4, since the temperature of the rapid heating / cooling heat treatment was low, it was confirmed that defects were not sufficiently eliminated by the rapid heating / cooling heat treatment, and the yield of oxide breakdown voltage deteriorated from the outermost surface of the wafer. .
《実施例１３》
直径２００ｍｍのシリコン単結晶インゴット（初期格子間酸素濃度が１６．１×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９），比抵抗が１０〜２０Ωｃｍ，窒素ドープなし）からスライスして鏡面加工を施した複数のシリコンウェーハに、ハロゲンランプを熱源とする熱処理炉を用いて１１５０℃×３秒の熱処理を施した。
Example 13
Slicing from a silicon single crystal ingot with a diameter of 200 mm (initial interstitial oxygen concentration of 16.1 × 10 17 atoms / cc (ASTM F-121, 1979), specific resistance of 10-20 Ωcm, non-nitrogen doped) A plurality of silicon wafers were subjected to heat treatment at 1150 ° C. for 3 seconds using a heat treatment furnace using a halogen lamp as a heat source.
さらに、この熱処理が施された複数のシリコンウェーハに、堆積温度が１１５０℃の条件でシリコンエピタキシャル層を４．０μｍ成長させ、得られたシリコンエピタキシャルウェーハの無欠陥深さとＢＭＤ密度とを実施例１と同じ条件で測定したところ、無欠陥深さは５．１μｍ、ＢＭＤ密度は０．８７×１０５個／ｃｍ２であった。 Further, a silicon epitaxial layer was grown to 4.0 μm on the plurality of silicon wafers subjected to the heat treatment under the condition of a deposition temperature of 1150 ° C., and the defect-free depth and BMD density of the obtained silicon epitaxial wafer were measured in Example 1. The defect-free depth was 5.1 μm, and the BMD density was 0.87 × 10 5 pieces / cm 2 .
《実施例１４》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１６．６×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を３４．０×１０１３ａｔｏｍｓ／ｃｃとしたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは５．６μｍ、ＢＭＤ密度は３．５×１０５個／ｃｍ２であった。
Example 14
Compared to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 16.6 × 10 17 atoms / cc (ASTM F-121, 1979), and the nitrogen concentration was 34.0 × 10 13 atoms / cc. Except for the above, a wafer was produced under the same conditions as in Example 13, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 5.6 μm, and the BMD density was 3.5 × 10 5 pieces / cm 2 .
《実施例１５》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１５．１×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプ熱処理炉に代えてキセノンランプを用いたフラッシュランプ熱処理炉、このフラッシュランプ熱処理炉を用いた熱処理を１２５０℃×０．００１秒、エピタキシャル層の膜厚を３．５μｍとしたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは４．３μｍ、ＢＭＤ密度は７．７×１０５個／ｃｍ２であった。
Example 15
Compared to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 15.1 × 10 17 atoms / cc (ASTM F-121, 1979), and flash lamp heat treatment using a xenon lamp instead of the halogen lamp heat treatment furnace A wafer was fabricated under the same conditions as in Example 13 except that the heat treatment using the furnace and the flash lamp heat treatment furnace was 1250 ° C. × 0.001 second and the film thickness of the epitaxial layer was 3.5 μm. And BMD density were measured. As a result, the defect-free depth was 4.3 μm, and the BMD density was 7.7 × 10 5 pieces / cm 2 .
《実施例１６》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１７．８×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を２７．０×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプ熱処理炉に代えてキセノンランプを用いたフラッシュランプ熱処理炉、このフラッシュランプ熱処理炉を用いた熱処理を１２５０℃×０．００１秒、エピタキシャル層の膜厚を３．５μｍとしたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは４．６μｍ、ＢＭＤ密度は１２．０×１０５個／ｃｍ２であった。
Example 16
Compared to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 17.8 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 27.0 × 10 13 atoms / cc, a halogen lamp A flash lamp heat treatment furnace using a xenon lamp instead of a heat treatment furnace, except that the heat treatment using this flash lamp heat treatment furnace is 1250 ° C. × 0.001 second and the thickness of the epitaxial layer is 3.5 μm. A wafer was produced under the same conditions as in No. 13, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 4.6 μm, and the BMD density was 12.0 × 10 5 pieces / cm 2 .
《実施例１７》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１６．４×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプ熱処理炉に代えてレーザを用いたレーザ熱処理炉、このレーザ熱処理炉を用いた熱処理を１３５０℃×０．００１秒、エピタキシャル層の膜厚を３．５μｍとしたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは４．７μｍ、ＢＭＤ密度は８．７×１０５個／ｃｍ２であった。
Example 17
In contrast to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 16.4 × 10 17 atoms / cc (ASTM F-121, 1979), a laser heat treatment furnace using a laser instead of the halogen lamp heat treatment furnace, A wafer was produced under the same conditions as in Example 13 except that the heat treatment using this laser heat treatment furnace was 1350 ° C. × 0.001 second and the film thickness of the epitaxial layer was 3.5 μm. Defect-free depth and BMD density Was measured. As a result, the defect-free depth was 4.7 μm, and the BMD density was 8.7 × 10 5 pieces / cm 2 .
《実施例１８》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１７．３×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を２４．０×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプ熱処理炉に代えてレーザを用いたレーザ熱処理炉、このレーザ熱処理炉を用いた熱処理を１３５０℃×０．００１秒、エピタキシャル層の膜厚を３．５μｍとしたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは４．３μｍ、ＢＭＤ密度は３２．０×１０５個／ｃｍ２であった。
Example 18
Compared to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 17.3 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 24.0 × 10 13 atoms / cc, a halogen lamp Laser heat treatment furnace using laser instead of heat treatment furnace, heat treatment using this laser heat treatment furnace was the same as Example 13 except that 1350 ° C. × 0.001 second and the thickness of the epitaxial layer was 3.5 μm. A wafer was produced under the conditions, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 4.3 μm, and the BMD density was 32.0 × 10 5 pieces / cm 2 .
《比較例５》
実施例１３に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１５．８×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプ熱処理炉を用いた熱処理を１１２５℃×３秒としたこと以外は、実施例１３と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、ＢＭＤ密度は０．９６×１０５個／ｃｍ２であったが、無欠陥深さは０μｍであった。
<< Comparative Example 5 >>
In contrast to Example 13, the initial interstitial oxygen concentration of the silicon single crystal ingot was 15.8 × 10 17 atoms / cc (ASTM F-121, 1979), and heat treatment using a halogen lamp heat treatment furnace was 1125 ° C. × 3 seconds. Except for this, a wafer was produced under the same conditions as in Example 13, and the defect-free depth and BMD density were measured. As a result, the BMD density was 0.96 × 10 5 pieces / cm 2 , but the defect-free depth was 0 μm.
実施例１３〜１８の結果から、初期格子間酸素濃度が１．４×１０１８ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）以上のウェーハに、１１５０℃以上、１３５０℃以下の温度で３秒以下の熱処理を施し、この上にシリコンエピタキシャル層を形成しても、得られたウェーハには約６μm以下の無欠陥層が形成されることが確認された。一方、ウェーハ表面から１０〜２０μmの領域に高いＢＭＤ密度が観察された。
From the results of Examples 13 to 18, a wafer having an initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc (ASTM F-121, 1979) or more is 3 seconds or less at a temperature of 1150 ° C. or more and 1350 ° C. or less. It was confirmed that a defect-free layer of about 6 μm or less was formed on the obtained wafer even when the silicon epitaxial layer was formed on this heat treatment. On the other hand, a high BMD density was observed in a region of 10 to 20 μm from the wafer surface.
これに対して、急速昇降温処理が１１２５℃であった比較例５では、この熱処理におけるウェーハ表層の酸素析出核の消滅が十分ではなく、エピタキシャル成長の際に、酸素析出核を起点にエピタキシャル欠陥の発生があり、酸化膜耐圧が劣化することが確認された。 On the other hand, in Comparative Example 5 in which the rapid temperature increase / decrease process was 1125 ° C., the disappearance of oxygen precipitation nuclei on the wafer surface layer during this heat treatment was not sufficient, and during the epitaxial growth, It was confirmed that the breakdown voltage of the oxide film deteriorated.
《実施例１９》
直径２００ｍｍのシリコン単結晶インゴット（初期格子間酸素濃度が１４．５×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９），比抵抗が１０〜２０Ωｃｍ，窒素ドープなし）からスライスして鏡面加工を施した複数のシリコンウェーハに、ハロゲンランプを熱源とする熱処理炉を用いて１１５０℃×３秒の熱処理を施した。
Example 19
Slicing from 200 mm diameter silicon single crystal ingot (initial interstitial oxygen concentration is 14.5 × 10 17 atoms / cc (ASTM F-121, 1979), specific resistance is 10-20 Ωcm, no nitrogen doping) and mirror finish A plurality of silicon wafers were subjected to heat treatment at 1150 ° C. for 3 seconds using a heat treatment furnace using a halogen lamp as a heat source.
この熱処理が施された複数のシリコンウェーハに対し、さらに１０００℃×３０分の追加熱処理をアルゴンガス雰囲気で施した。 An additional heat treatment at 1000 ° C. for 30 minutes was further performed in an argon gas atmosphere on the plurality of silicon wafers subjected to the heat treatment.
得られたシリコンウェーハの無欠陥深さとＢＭＤ密度とを実施例１と同じ条件で測定したところ、無欠陥深さは２．３μｍ、ＢＭＤ密度は２．３×１０５個／ｃｍ２であった。 When the defect-free depth and BMD density of the obtained silicon wafer were measured under the same conditions as in Example 1, the defect-free depth was 2.3 μm and the BMD density was 2.3 × 10 5 pieces / cm 2 . .
《実施例２０》
実施例１９に対し、追加熱処理条件を１２００℃×６０分としたこと以外は、実施例１９と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは５．６μｍ、ＢＭＤ密度は１．１×１０５個／ｃｍ２であった。
Example 20
For Example 19, a wafer was produced under the same conditions as Example 19 except that the additional heat treatment condition was 1200 ° C. × 60 minutes, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 5.6 μm, and the BMD density was 1.1 × 10 5 pieces / cm 2 .
また、追加熱処理を行う前後におけるＢＭＤサイズを透過電子顕微鏡にて観察したところ、追加熱処理を行う前の状態では透過電子顕微鏡で検出可能な最小サイズ以下（＜１０ｎｍ）であったのに対し、追加熱処理を行った後の状態では平均サイズが６３．４ｎｍの多面体形状の析出物が観察された。 In addition, when the BMD size before and after the additional heat treatment was observed with a transmission electron microscope, it was less than the minimum size (<10 nm) detectable with the transmission electron microscope before the additional heat treatment. In the state after the heat treatment, polyhedral precipitates having an average size of 63.4 nm were observed.
《実施例２１》
実施例１９に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．６×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにキセノンランプを用いたフラッシュランプ熱処理炉、急速昇降温熱処理条件を１２５０℃×０．００１秒、追加熱処理条件を１１５０℃×３０分としたこと以外は、実施例１９と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは２．１μｍ、ＢＭＤ密度は１９．０×１０５個／ｃｍ２であった。
<< Example 21 >>
In contrast to Example 19, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.6 × 10 17 atoms / cc (ASTM F-121, 1979), a flash lamp heat treatment furnace using a xenon lamp instead of a halogen lamp, A wafer was fabricated under the same conditions as in Example 19 except that the rapid heating / cooling heat treatment conditions were 1250 ° C. × 0.001 seconds and the additional heat treatment conditions were 1150 ° C. × 30 minutes, and the defect-free depth and BMD density were measured. . As a result, the defect-free depth was 2.1 μm, and the BMD density was 19.0 × 10 5 pieces / cm 2 .
《実施例２２》
実施例１９に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．６×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにキセノンランプを用いたフラッシュランプ熱処理炉、急速昇降温熱処理条件を１２５０℃×０．００１秒、追加熱処理条件を１１５０℃×６０分としたこと以外は、実施例１９と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは３．５μｍ、ＢＭＤ密度は１２．０×１０５個／ｃｍ２であった。
<< Example 22 >>
In contrast to Example 19, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.6 × 10 17 atoms / cc (ASTM F-121, 1979), a flash lamp heat treatment furnace using a xenon lamp instead of a halogen lamp, A wafer was fabricated under the same conditions as in Example 19 except that the rapid heating / cooling heat treatment conditions were 1250 ° C. × 0.001 seconds and the additional heat treatment conditions were 1150 ° C. × 60 minutes, and the defect-free depth and BMD density were measured. . As a result, the defect-free depth was 3.5 μm, and the BMD density was 12.0 × 10 5 pieces / cm 2 .
《実施例２３》
実施例１９に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．４×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、ハロゲンランプの代わりにレーザを用いたレーザ熱処理炉、急速昇降温熱処理条件を１３００℃×０．００１秒、追加熱処理条件を１１５０℃×３０分としたこと以外は、実施例１９と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは３．７μｍ、ＢＭＤ密度は１０．０×１０５個／ｃｍ２であった。
<< Example 23 >>
In contrast to Example 19, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.4 × 10 17 atoms / cc (ASTM F-121, 1979), a laser heat treatment furnace using a laser instead of a halogen lamp, rapid raising and lowering A wafer was fabricated under the same conditions as in Example 19 except that the thermal heat treatment conditions were 1300 ° C. × 0.001 seconds and the additional heat treatment conditions were 1150 ° C. × 30 minutes, and the defect-free depth and BMD density were measured. As a result, the defect-free depth was 3.7 μm, and the BMD density was 10.0 × 10 5 pieces / cm 2 .
《実施例２４》
実施例１９に対し、シリコン単結晶インゴットの初期格子間酸素濃度を１４．７×１０１７ａｔｏｍｓ／ｃｃ（ＡＳＴＭ Ｆ−１２１，１９７９）、窒素濃度を８５．８×１０１３ａｔｏｍｓ／ｃｃ、ハロゲンランプを用いた急速昇降温熱処理条件を１２００℃×５秒、追加熱処理条件を１１５０℃×６０分としたこと以外は、実施例１９と同じ条件でウェーハを作製し、無欠陥深さとＢＭＤ密度を測定した。その結果、無欠陥深さは４．９μｍ、ＢＭＤ密度は２４．０×１０５個／ｃｍ２であった。
Example 24
Compared to Example 19, the initial interstitial oxygen concentration of the silicon single crystal ingot was 14.7 × 10 17 atoms / cc (ASTM F-121, 1979), the nitrogen concentration was 85.8 × 10 13 atoms / cc, a halogen lamp A wafer was fabricated under the same conditions as in Example 19 except that the rapid heating / cooling heat treatment conditions using 1200 were 1200 ° C. × 5 seconds and the additional heat treatment conditions were 1150 ° C. × 60 minutes, and the defect-free depth and BMD density were measured. did. As a result, the defect-free depth was 4.9 μm, and the BMD density was 24.0 × 10 5 pieces / cm 2 .
実施例１９〜２４の結果から、急速昇降温処理を施したウェーハに追加熱処理（非酸化性雰囲気）をすることで、ウェーハ表面から１０〜２０μmの位置における酸素析出物のサイズが増大することが確認された（実施例２０）。したがって、１０〜２０μｍの位置における熱安定性が向上するとともに、さらに表層付近では酸素の外方拡散によって表層のＢＭＤが消滅することで無欠陥深さの調整も可能となる。
From the results of Examples 19 to 24, the size of the oxygen precipitate at the position of 10 to 20 μm from the wafer surface can be increased by performing an additional heat treatment (non-oxidizing atmosphere) on the wafer that has been subjected to the rapid heating and cooling process. It was confirmed (Example 20). Accordingly, the thermal stability at a position of 10 to 20 μm is improved, and further, the defect-free depth can be adjusted by the disappearance of the BMD in the surface layer due to the outward diffusion of oxygen near the surface layer.
Claims (11)
アルゴンガスのガス雰囲気中において、１１５０℃以上、シリコン融点以下の熱処理温度で、５秒以下の急速昇降温熱処理を施し、前記シリコンウェーハの表面から０．６μｍ〜２．６μｍの深さに無欠陥層を形成する工程を有することを特徴とするシリコン単結晶ウェーハの製造方法。 A silicon wafer is processed from a single crystal grown by the Czochralski method, the initial interstitial oxygen concentration of 1.4 × 10 18 atoms / cc ( ASTM F-121,1979) over the silicon wafer,
In gas atmosphere of argon gas, 1150 ° C. or more, a silicon melting point below the heat treatment temperature, and facilities the rapid lifting thermal treatment of 5 seconds or less, free from the surface of the silicon wafer to a depth of 0.6μm~2.6μm A method for producing a silicon single crystal wafer, comprising a step of forming a defect layer .
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