JP5195640B2 - Heat treatment equipment - Google Patents

Description

  The present invention relates to an apparatus for modifying a coating film by heating a substrate on which a chemical solution is applied and a coating film such as an insulating film is formed in a reduced-pressure atmosphere.

  As one of the semiconductor device manufacturing processes, for example, there is an SOD (Spin on Dielectric) method of forming an insulating film on a semiconductor wafer (hereinafter referred to as “wafer”). In this method, a coating solution in which an insulating film forming material is dissolved in a solvent is applied to the surface of a wafer by spin coating, and after drying the coating solution, the wafer is heated to cause a chemical reaction, for example, The insulating film is formed by performing condensation polymerization and then performing a modification (curing) treatment for curing the coating film.

  The reforming process is performed by, for example, an EB (Electron Beam) cure unit (EBC) 1 shown in FIG. For convenience of illustration, the EB irradiation unit is omitted. The EB cure unit 1 includes an airtight processing chamber 10 (vacuum chamber) for heating the wafer W. An annular body 10a is formed so as to protrude upward from the center of the bottom surface of the processing chamber 10, and a circular substrate mounting table 11 slightly wider than the wafer is provided on the upper surface. A heater 12 for heating the substrate mounting table 11 to, for example, 200 ° C. to 450 ° C. is embedded in the inside 11 of the substrate mounting table 11. Further, lift pins 13 for delivering the wafer W to the substrate platform 11 are provided through the substrate platform 11.

A gas inlet 14 is provided over the entire surface of the ceiling of the processing chamber 10, and a purge gas such as nitrogen (N ₂ ) or helium (He) is supplied into the processing chamber 10 from the gas inlet 14. Is done. Further, exhaust ports 15 a and 15 b are formed at two positions symmetrical with respect to the center of the processing chamber 10 on the bottom surface outside the annular body 10 a.

  In the process of modifying the wafer W, the wafer W is first placed on the substrate platform 11 via the lift pins 13 and the wafer W is heated to, for example, 300 ° C. by the heater 12. Next, a purge gas is introduced into the processing chamber 10 from the gas inlet 14, and vacuum exhaust is performed, for example, at 900 Pa (7 Torr) from the exhaust ports 15 a and 15 b. At this time, an air flow exhausted from the exhaust ports 15a and 15b is formed in the processing chamber 10 from the top to the bottom as indicated by arrows through the annular space between the annular body 10a and the side wall of the processing chamber 10. On the other hand, when the wafer W is heated, the coating film is modified and sublimates are generated from the coating film. The sublimate is discharged to the outside of the processing chamber 10 in the airflow.

In such an EB cure unit 1, in order to quickly exhaust the purge gas from the inside of the processing chamber 10 in a reduced pressure atmosphere, the annular space of the processing chamber 10 has a large volume, and the flow rate of the gas flowing through the processing chamber 10 is, for example, 30 L. / Min, so that a unidirectional flow is formed as described above.

  However, in consideration of the influence on the environment, it is preferable that the flow rate of the purge gas is small. However, if the flow rate of the gas in the processing chamber 10 is reduced, the flow of the one-way flow described above becomes weak, and the substrate mounting table 11 There is a problem that convection is generated by heat, and the sublimate gets on the convection and reattaches to the surface of the wafer W to contaminate the wafer W. Such a heat treatment apparatus is disclosed in, for example, Patent Document 1, but does not describe means for solving the above-described problem. In Patent Document 2, the gap between the peripheral edge of the substrate mounting table and the side wall of the processing chamber is configured to be narrow, but nothing is mentioned about the above-described problems.

JP 2006-86539 A JP 2004-186682 (see FIG. 20)

  The present invention has been made under such circumstances, and an object of the present invention is to carry out a heat treatment of a coating film formed on a substrate in a reduced-pressure atmosphere even when the amount of purge gas supplied into the processing chamber is small. An object of the present invention is to provide a heat treatment apparatus capable of suppressing adhesion of sublimates to the surface.

The heat treatment apparatus of the present invention
In an apparatus for modifying the coating film by heat-treating the substrate on which the coating film is formed in a hermetic processing container under a reduced pressure atmosphere,
A substrate mounting table provided for horizontally mounting the substrate in the processing container, and a substrate mounting table that is the same as or wider than the substrate;
Heating means for heating the substrate mounting table;
A gas introduction part for introducing a purge gas into the processing container, provided in the central part of the ceiling part of the processing container so as to face the substrate mounting table;
An exhaust port formed at the bottom of the processing vessel;
And a rectifying unit that protrudes outward from the outer edge side of the substrate mounting table, is provided along the circumferential direction of the substrate mounting table, and forms a space between the bottom surface of the processing container. .

Further, the heat treatment apparatus may take the following configuration.
1. Provided with an annular body provided so as to extend upward from the bottom surface of the processing container, the cross section of which is substantially the same size as the substrate mounting table,
The substrate mounting table is configured to close the upper surface of the annular body.
2. A configuration in which an outer edge portion of the rectifying portion is bent downward.
3. The structure which narrowed the space between the said rectification | straightening part and the ceiling part of a processing container as it goes to the outer edge of the said rectification | straightening part.
4). A configuration in which a gas introduction part is further provided at a position close to the outer edge side from the central part of the ceiling part of the processing container in order to assist the introduction of the gas from the gas introduction part.

  If the flow rate of the purge gas for discharging the sublimate from the substrate is reduced while the inside of the processing container is decompressed, convection is generated in the processing container due to the heat of the heated substrate mounting table, and the sublimate adheres to the substrate (re-apply) It becomes easy to adhere). Here, the present invention provides a rectifying unit protruding outward from the outer edge of the substrate mounting table in the processing container along the circumferential direction of the substrate mounting table, and the rectifying unit divides the space in the processing container vertically. The vacuum is exhausted from the lower space. For this reason, while gas flows radially in the upper space, convection is likely to occur in the lower space, but the airflow due to the convection is less likely to return to the upper space by the rectifying member. For this reason, it is possible to suppress adhesion of sublimates to the substrate while reducing the flow rate of the purge gas.

It is a top view which shows the insulating film formation apparatus which applied the heat processing apparatus which concerns on this invention to EB cure unit, and built in the said EB cure unit. It is a layout which shows the apparatus structure of the said insulating film formation apparatus. It is a longitudinal cross-sectional view which shows the said EB cure unit. It is a top view which shows the said EB cure unit. It is the top view and longitudinal cross-sectional view which show the said exhaust ring. It is a top view of the electron beam irradiation apparatus which comprises a part of said EB cure unit. It is a schematic diagram which illustrates typically the down flow formed in the said EB cure unit. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a figure which shows the lower surface of the EB irradiation unit of the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the heat processing apparatus which concerns on other embodiment. It is a longitudinal cross-sectional view which shows the EB cure unit to which the conventional heat processing apparatus is applied.

  An example in which the heat treatment apparatus according to the embodiment of the present invention is applied to an EB (Electron Beam) cure unit (EBC) and incorporated in an insulating film forming apparatus will be described. First, an insulating film forming apparatus will be briefly described with reference to FIGS. This insulating film forming apparatus 100 includes a carrier block 110 for carrying in and out a carrier C in which a plurality of wafers W are stored, and a first processing block 120 and a second processing block 130. The carrier block 110 includes, for example, a carrier mounting table 111 on which three carriers C1, C2, and C3 can be mounted side by side, and a transfer arm (CRA) 113 that transfers the wafer W between the carrier C and the processing block. And.

  The first processing block 120 includes three stacked portions T1, T2, and T3, each of which is formed by stacking a plurality of units. The unit of each laminated part is as follows. The TRS 121 is a delivery unit that transports the wafer W to and from the carrier block 110, the CPL 123 is a temperature control unit that heats the wafer W to a predetermined temperature before application of the chemical liquid containing the insulating film forming material, and the DVT 124 is the wafer W UV irradiation unit that performs ultraviolet irradiation processing on the surface, TCP 125 is a transition chill plate that cools the wafer W, and SCT 127 is a coating that performs a process of forming a coating film by applying a chemical containing an insulating film forming material to the surface of the wafer W. The unit, HHP128 is a high-temperature heating unit that evaporates the solvent contained in the coating film formed on the wafer surface by heat to dry the coating film, and the DLB 129 heats the wafer W to perform a chemical reaction of the coating film. It is a bake unit. 1 and 2 denotes a transfer arm (PRA) for transferring the wafer W between the units.

  The second processing block 130 includes a delivery unit TRS131 for transferring the wafer W to and from the PRA 122, a UV cure unit (UVC) 132 for irradiating the wafer W with ultraviolet rays and performing a modification process, and a wafer W. By performing so-called cure treatment (EB cure treatment with an electron beam) in which the coating film is cured (modified) by causing crosslinking or porogen separation to proceed by heating to a temperature higher than the baking treatment temperature. And an EB cure unit (EBC) 2 for forming an insulating film. Further, reference numeral 133 in FIGS. 1 and 2 denotes a transfer arm (PRA) that transfers the wafer W between the units.

  Wafer W accommodated in carrier C is transferred arm (CRA) 113 → transfer unit (TRS) 121 → transfer arm (PRA) 122 → UV irradiation unit (DVT) 124 → temperature control unit (CPL) 123 → coating unit. (SCT) 127 → High temperature heating unit (HHP) 128 → Bake unit (DLB) 129 → UV cure unit (UVC) 132 → EB cure unit (EBC) 2 → Transition chill plate (TCP) 125 → Transfer arm (CRA) 113 Are processed in this order, predetermined processing is performed in each processing unit, and returned to the carrier C. By this series of processing, an insulating film is formed on the surface of the wafer W.

  Next, an EB cure unit (EBC) that is an embodiment of a heat treatment apparatus according to the present invention will be described. As shown in FIGS. 3 and 4, the EB cure unit (EBC) 2 includes a cylindrical processing chamber 21 for heat-treating the wafer W and a rectangular wafer loading / unloading chamber 22 that also serves as a load lock chamber. They are connected via a valve 23. The processing chamber 21 and the wafer carry-in / out chamber 22 are constituted by an airtight container (vacuum container). The processing chamber 21 and the wafer loading / unloading chamber 22 are surrounded by a rectangular case body whose upper surface is open.

  An annular body 24 is provided upright at the center of the bottom surface of the processing chamber 21, and a substrate mounting table 31 is provided so as to hermetically close the upper surface of the annular body 24. The substrate mounting table 31 is capable of mounting a wafer W, and is formed to have the same size as the wafer W or slightly wider than that. The substrate mounting table 31 is made of a material having excellent thermal conductivity, such as ceramic silicon carbide or aluminum nitride. For example, a heater 33 which is a heating unit supplied with power from the power supply unit 32 is embedded in the substrate mounting table 31, and the substrate mounting table 31 can be heated to, for example, 200 ° C. to 450 ° C. Although not shown in the figure, proximity pins that support the wafer W in proximity to the surface of the substrate mounting table 31 are provided concentrically on the surface of the substrate mounting table 31.

  On the outer edge of the substrate mounting table 31, a rectifying unit 34, in this example, a rectifying plate, is formed along the circumferential direction of the substrate mounting table 31 (over the entire circumference). The height level of the upper surface of the rectifying unit 34 is set to be, for example, the same height as the surface of the wafer W when the wafer W is placed on the substrate platform 31. The bottom part of the annular space formed between the annular body 24 and the side peripheral wall of the processing chamber 21, that is, the outer portion of the annular body 24 on the bottom surface of the processing chamber 21 is opposed to each other through the central portion of the processing chamber 21. Exhaust ports 64a and 64b are formed at the positions where they are located. An exhaust ring 61 is provided along the outer circumferential direction of the annular body 24. A large number of holes 62 are formed on the surface of the exhaust ring 61 as shown in FIG. 5, and the holes 62 are connected to a flow path 63 formed in an annular shape in the exhaust ring 61. The flow path 63 extends downward at positions corresponding to the exhaust ports 64a and 64b, and is connected to the exhaust ports 64a and 64b. An exhaust pipe 65 is connected from below the exhaust ports 64a and 64b, and an upstream side of the exhaust pipe 65 is connected to a vacuum pump 67 serving as a vacuum exhaust means via a pressure adjusting valve 66.

  The processing chamber 21 has a so-called process space (upper space 21a) on the upper side and an annular exhaust space (lower space 21b) on the lower side by the rectifying unit 34 that protrudes laterally from the substrate mounting table 31 as described above. ) And is divided. The separation distance between the outer edge of the rectifying unit 34 and the side peripheral wall of the processing chamber 21 is set to about 45 mm, for example. In the space surrounded by the annular body 24, an electrode rod 32a, an elevating pin 36, and an elevating mechanism 35 for the elevating pin 36 are provided. The electrode bar 32 a is fed from the outside through the bottom surface of the processing chamber 21. The elevating pins 36 penetrate the substrate mounting table 31 and can transfer the wafer W between the substrate mounting table 31 and a transfer arm described later.

An EB irradiation unit 41 is provided on the ceiling of the processing chamber 21. The EB irradiation unit 41 is configured by arranging a plurality of EB irradiation tubes 42 in a region facing the wafer W on the substrate mounting table 31, and is controlled by an irradiation control device 43. Further, a gas supply nozzle 51 that is a gas introduction unit is provided in a portion of the ceiling portion of the processing chamber 21 that faces the central portion of the substrate mounting table 31. The gas supply nozzle 51 is configured by a cylindrical body having a large number of gas discharge ports formed on the lower surface and side surfaces thereof, and can supply an inert gas such as nitrogen gas (N ₂ ) as a purge gas into the processing chamber 21. is there. The gas supply nozzle 51 is connected to a gas supply source 53 through a pipe 52 penetrating the central portion of the EB irradiation unit 41, and the gas supply amount is controlled by a valve 52a provided.

  As shown in FIG. 4, the wafer carry-in / out chamber 22 is provided with a transfer arm 71 having a multi-joint structure and lift pins 73 that can be lifted and lowered by a lift mechanism 72. For example, nitrogen gas is supplied to the wafer carry-in / out chamber 22 from a gas supply source 53 through a pipe 54 provided with a valve, and nitrogen gas is sucked and exhausted from, for example, a vacuum pump 67 which is a suction exhaust unit. A wafer carry-in / out opening 74 that can be opened and closed by a gate valve 74a is formed on the side wall of the wafer carry-in / out chamber 22.

  Reference numeral 8 in FIG. 3 denotes a control unit. The control unit 8 is a computer provided with, for example, a CPU, a program, a data bus, a memory, and the like. The program is stored in the program storage unit, and is installed in the control unit by an external storage medium such as a flexible disk, a hard disk, an MD, a memory card, or the like. And the control part 8 is connected to the gas supply source 53, the suction exhaust part 67, the pin raising / lowering mechanisms 35 and 72, the conveyance arm 71, and the irradiation control apparatus 43, and has a function which controls these operation | movement.

Next, a process of modifying the coating film formed on the surface of the wafer W in the EB cure unit (EBC) 2 by heat treatment will be described. First, the wafer carry-in / out chamber 22 is maintained at N ₂ atmosphere and normal pressure, and the shutter 74a is driven to open the wafer carry-in / out port 74. Subsequently, the transfer arm (PRA) 133 holding the wafer W after the UV curing process is entered through the wafer loading / unloading port 74, and the transfer arm is lowered 133 so that the wafer W is placed on the lift pins 73 that have been raised in advance. Let As a result, the wafer W is supported by the lift pins 73, and the transfer arm (PRA) 133 is retracted from the wafer carry-in / out chamber 22. The wafer W is held on the transfer arm 71 by lowering the lift pins 73. On the other hand, the wafer carry-in / out chamber 22 is evacuated from the exhaust port and maintained in a predetermined low oxygen reduced pressure atmosphere.

  Subsequently, the gate valve 23 is opened, the transfer arm 71 is advanced into the processing chamber 21 that has been previously in a vacuum atmosphere, and the wafer W is placed on the wafer W substrate placement table 31 by the cooperative action with the lift pins 36. The mounting table 31 is heated to a predetermined temperature by a heater 33 in advance, and the wafer W is heated to, for example, 300 ° C. after being mounted on the substrate mounting table 31.

  Next, a purge gas, for example, nitrogen gas, is supplied from the gas supply nozzle 51 to the space between the ceiling of the processing chamber 21 and the wafer W (the process space that is the upper space). Since the exhaust ring 61 is provided, the suction / exhaust action works with high uniformity over the entire circumference from between the rectifying unit 34 and the inner peripheral wall of the processing chamber 21, and the rectifying unit 34 protrudes outward. Since the space between the processing chamber 21 and the inner peripheral wall is narrow, pressure loss occurs in this portion. As a result, the purge gas supplied from the gas supply nozzle 51 moves from the central region of the wafer W toward the periphery as shown by the arrows in FIG. It spreads radially uniformly, flows to the lower space 21b, and is sucked and exhausted through the hole 62 of the exhaust ring 61 and the exhaust ports 64a and 64b.

  On the other hand, along with the heating of the wafer W by the substrate mounting table 31, the modification of the coating film on the wafer W is performed by the irradiation of the electron beam by the EB irradiation unit 41. Since the electron beam is excellent in transparency, it penetrates into the insulating film and a uniform reforming process is performed on the entire insulating film. During the coating film modification process, a process gas such as argon gas or methane gas may be introduced for the purpose of cooling the EB irradiation tube 42 or promoting the process reaction.

  A sublimate is generated from the coating film of the wafer W along with the reforming process, and flows on the purge gas from the upper space 21a to the lower space 21b. At this time, an air flow (convection) due to the heat of the substrate mounting table 31 and the wafer W tends to be generated in the upper space 21a. However, since the space of the upper space 21a is low, the gas is vigorously radiated as shown in FIG. As a result, the sublimate also flows out from the upper space 21a to the lower space 21b. On the other hand, since the lower space 21b has a large volume and the introduction amount of the purge gas in the processing chamber 21 is small, convection is generated by the above heat and the airflow is disturbed, but the rectifying unit is located above the lower space 21b. Since 34 has jumped out, the turbulent airflow is pushed back downward by the rectifying unit 34, so that backflow into the upper space 21a is suppressed and inflow of sublimates is also suppressed.

  After the coating film reforming process is completed, the wafer W is transferred to the transfer arm (PRA) 133 via the transfer arm 71 of the wafer loading / unloading chamber 22 in the reverse procedure of the transfer operation described above, and then revised. The wafer W to be subjected to the quality treatment is transferred into the EB cure unit (EBC) 2 through the wafer carry-in / out chamber 22 and the coating film is reformed.

  In the above-described embodiment, a plate-like rectification unit 34 protruding outward from the outer edge of the substrate mounting table 31 provided in the processing chamber 21 is provided along the circumferential direction of the substrate mounting table 31, and Is divided into an upper process space (upper space 21a) and a lower exhaust space (lower space 21b). If the flow rate of the purge gas is small, convection is likely to occur in the wide lower space 21b due to the heat of the substrate mounting table 31. However, since the backflow to the upper space 21a is suppressed by the rectifying unit 34, the sublimate to the wafer W is suppressed. Can be suppressed. Therefore, according to the above-described embodiment, there is an effect that particle contamination of the wafer W can be reduced while reducing the flow rate of the purge gas in consideration of the environment.

  The heat treatment apparatus of the present invention can also be configured as an apparatus that does not use an EB cure unit. In the above-described embodiment, the rectifying unit 34 is fixed to the upper end surface of the annular body, but may be fixed to the outer peripheral surface of the upper end portion of the annular body, or the substrate mounting table 31 may be fixed to the annular body 24. You may make it protrude upwards rather than an upper end, and may be fixed to the outer peripheral surface of the protrusion part. In other words, in the present invention, the rectifying unit 34 protrudes outward from the outer edge side of the substrate mounting table 31, but is not limited to being directly fixed to the mounting table 31.

  Next, another embodiment of the heat treatment apparatus will be described. The same parts as those in the above embodiment are denoted by the same reference numerals. In the example shown in FIG. 8, the outer peripheral edge portion of the rectifying portion 200 is bent downward, for example, in a hook shape, to form a bent portion (vertical wall portion) 201. In this example, a part of the gas that has flowed into the lower space 21b convects due to heat and tries to flow back to the upper space 21a. However, the airflow rising to the lower side of the horizontal portion of the rectifying unit 200 is bent. Since it is guided downward along the part 201, it becomes difficult to return to the upper space 21 a through the space between the rectifying unit 200 and the inner peripheral wall of the processing chamber 21, and thus backflow is further suppressed.

  Further, in the example shown in FIG. 9, protrusions 211 and 212 are provided on the inner peripheral edge and the outer peripheral edge on the lower surface of the rectifying part 210 so as to protrude downward over the entire periphery, and the outer peripheral edge and the inner peripheral edge A recess 214 is formed therebetween. Further, FIG. 10 has the same configuration as that of FIG. 9, but the concave portion of the rectifying unit 220 is curved. In the example of FIGS. 9 and 10, a part of the gas that has flowed into the lower space 21b convects due to heat and tries to flow back into the upper space 21a, but the airflow that has entered the recess is guided to the inner peripheral surface of the recess. Since it goes downward, the effect of suppressing backflow is great. The three examples shown in FIGS. 8 to 10 are common in that the outer edge portion of the rectifying portion is bent downward.

Further, in another embodiment, as shown in FIG. 11, the outer wall of the EB irradiation unit 41 in the ceiling portion of the processing chamber 21 is inclined downward so as to become lower toward the outside. The upper space 21a sandwiched between the inclined wall 230 and the rectifying unit 34 is configured to become narrower toward the outside. In this example, the purge gas discharged from the gas supply nozzle 51 increases in flow rate toward the outside of the upper space 21a, flows into the lower space 21b, and is exhausted from the exhaust ports 64a and 64b. Therefore, since the flow velocity when the gas flows from the upper space 21a to the lower space 21b is increased, the airflow that attempts to return from the lower space 21b to the upper space 21a can be suppressed, and the sublimation to the wafer W is performed. The reattachment of objects can be further reduced.
Further, in the example shown in FIG. 12, the upper surface of the rectifying unit 240 is inclined so as to rise as it goes outward, and the interval between the rectifying unit 240 and the ceiling of the processing chamber 21 is narrowed. Furthermore, in the example shown in FIG. 13, both the inclined wall 230 and the rectification | straightening part 240 are provided. In these examples, the same operation and effect as in the example of FIG. 11 can be obtained.

  In the example shown in FIG. 14, two annular rectification units 251 and 252 are provided in the processing chamber 21 by support members (not shown) at intervals above the rectification unit 34. These rectifying units 251 and 252 are formed so that the longitudinal cross section increases toward the outside. Therefore, the gap between the upper surface of the processing chamber 21 and the rectifying unit 251, the gap between the rectifying unit 251 and the rectifying unit 252, and The gap between the rectifying unit 252 and the rectifying unit 34 is configured to be narrowed outward. In this example, when the gas discharged from the gas supply nozzle 51 passes through the above-described gap, the gas flow velocity increases, flows into the lower space 21b, and is exhausted from the exhaust ports 64a and 64b. Therefore, since the flow velocity when the gas flows from the upper space 21a to the lower space 21b is increased, the convection flowing from the lower space 21b to the upper space 21a can be suppressed, and the particles are regenerated to the wafer W. Adhesion can be prevented.

In another embodiment, a gas supply nozzle is provided in addition to the central portion of the EB unit 41 as shown in FIG. As shown in the layout of FIG. 16, these nozzles are provided with, for example, three auxiliary nozzles 51 a at equal intervals in the circumferential direction on a concentric circle K <b> 1 centered on the main nozzle 51 provided in the center, and further centered on the main nozzle 51. For example, five auxiliary nozzles 51b are arranged at equal intervals on a concentric circle K2 having a diameter larger than the concentric circle K1 on which the auxiliary nozzle 51a is arranged. The main nozzle 51 has a cylindrical shape like the gas supply nozzle described above, and discharge ports are formed on the bottom and side surfaces. The auxiliary nozzles 51a and 51b are formed with gas discharge ports so that gas can be discharged outward and downward in concentric circles. The auxiliary nozzle may be provided with a gas discharge port only on the lower surface of the cylindrical body so that gas can be discharged downward. Pipes are connected to the nozzles 51, 51a, and 51b, and are connected to a gas supply source 53 through valves.

  In this example, the gas discharged from the main nozzle 51 decreases in flow rate as it flows outward from the processing chamber 21, but merges with the gas discharged from the auxiliary nozzles 51 a and 51 b, and at the peripheral portion of the wafer W. A faster flow rate is maintained, flows to the lower space 21b, and is discharged from the exhaust port. The auxiliary nozzles 51a and 51b are for compensating for the introduction of gas from the main nozzle 51. By arranging the nozzles 51, 51 a, 51 b in a stepwise manner from the center to the outside in this way, the gas is supplied in a stepwise manner, so that the state where the gas flow rate is large to the outside of the processing chamber 21 is maintained. Since the gas flows in one direction from the upper space 21a to the lower space 21b, it is possible to prevent the sublimate from adhering to the wafer W. The embodiment in which the outer edge portion of the rectifying portion described above is bent downward, and the space between the rectifying portion and the ceiling portion of the processing chamber 21 is narrowed toward the outer edge of the rectifying portion. In order to assist the introduction of gas from the gas introduction part and the gas introduction part, any two of the embodiments in which a gas introduction part is further provided at a position closer to the outer edge side from the center part of the ceiling part of the processing chamber 21 May be combined, or any three may be combined.

  Moreover, FIG. 17 is an apparatus provided with the above-mentioned inclined wall 230 and nozzle 51, 51a, 51b. If the apparatus is configured in this way, when there is an irradiation window on the upper surface of the apparatus, such as an EB cure apparatus or a UV cure apparatus, there is no place to secure a sufficient inclined wall 230 on the upper surface, and the airflow caused by the inclined wall 230 Even when the effect of increasing the flow rate is not sufficiently obtained, the gas flow rate can be kept high even outside the processing chamber due to the synergistic effect of the inclined wall 230 and the nozzles 51, 51a, 51b. Accordingly, since the gas flows in one direction from the upper space 21a to the lower space 21b, it is possible to prevent the sublimate from adhering to the wafer W again.

W wafer 2 EB cure unit 21 processing chamber 21a upper space 21b lower space 31 substrate mounting table 33 heater 34 rectifier 41 EB irradiation unit 42 EB irradiation tube 43 irradiation control device 51 gas supply nozzle 52 gas supply source 61 exhaust ring 64a, 64b Exhaust port 67 Suction exhaust unit 8 Control unit 100 Insulating film forming apparatus

Claims (5)

In an apparatus for modifying the coating film by heat-treating the substrate on which the coating film is formed in a hermetic processing container under a reduced pressure atmosphere,
A substrate mounting table provided for horizontally mounting the substrate in the processing container, and a substrate mounting table that is the same as or wider than the substrate;
Heating means for heating the substrate mounting table;
A gas introduction part for introducing a purge gas into the processing container, provided in the central part of the ceiling part of the processing container so as to face the substrate mounting table;
An exhaust port formed at the bottom of the processing vessel;
And a rectifying unit that protrudes outward from the outer edge side of the substrate mounting table, is provided along the circumferential direction of the substrate mounting table, and forms a space between the bottom surface of the processing container. Heat treatment equipment. Provided with an annular body provided so as to extend upward from the bottom surface of the processing container, the cross section of which is substantially the same size as the substrate mounting table,
The heat treatment apparatus according to claim 1, wherein the substrate mounting table is provided so as to close an upper surface of the annular body.   The heat treatment apparatus according to claim 1, wherein an outer edge portion of the rectifying portion is bent downward.   The space between the rectifying unit and the ceiling portion of the processing container is configured to become narrower toward the outer edge of the rectifying unit, according to any one of claims 1 to 3. Heat treatment equipment.   5. The gas introduction part according to claim 1, further comprising a gas introduction part at a position close to the outer edge side from the center part of the ceiling part of the processing container in order to assist the introduction of the gas from the gas introduction part. The heat processing apparatus as described in any one.

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