JP5193872B2 - 空間光フィルタとして機能を果たす共振光空洞と抽出器を有する有機発光ダイオード - Google Patents
空間光フィルタとして機能を果たす共振光空洞と抽出器を有する有機発光ダイオード Download PDFInfo
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- JP5193872B2 JP5193872B2 JP2008539400A JP2008539400A JP5193872B2 JP 5193872 B2 JP5193872 B2 JP 5193872B2 JP 2008539400 A JP2008539400 A JP 2008539400A JP 2008539400 A JP2008539400 A JP 2008539400A JP 5193872 B2 JP5193872 B2 JP 5193872B2
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
2π×2DC/λCN+F=2πm (式1)
ここで、mは整数であり、一般的には1に等しい。Fは、共振空洞の境界を区切る反射層のそれぞれの波長λCNの光線の反射における全位相変化を表す。上述の式1は、共振空洞を区切る反射層に垂直な方向に伝播する光線に対する共振波長λCNを与える。垂直方向から外れた伝播方向に対しては、共振波長は図2と図4に示すように減少する。
一方では、上記交差線と上記入射部とに共通の点と上記交差線と上記出射部とに共通の点を結ぶ直線と、
他方では、放物線であって、その軸が後者の共通の点と、上記のものとは対称であり、他方の交差線と上記入射部とに共通の点を結ぶ直線にほぼ平行であり、その焦点がこの他方の交差線と上記出射部の端部とに共通の点にほぼ一致するような放物線と、
により区切られた表面内にあるのが好適である。
a=a’/sinθc (式2)
抽出器の深さL、すなわち入射部と出射部との間の距離は式3で表される。
L=(a+a’)cosθc (式3)
2π×2Dc/λCN+F=2π (式4)
ここで、Fは電極21、23のそれぞれで波長λCNの光線が反射する際の位相変化の合計である。
λC-lim=λCNcosθlim (式5)
Claims (7)
- 下部電極と上部電極との間に挿入された有機電界発光層を含んでおり、
前記有機電界発光層は、下部反射層と上部反射層との間に挿入され、当該下部反射層と上部反射層との間に前記有機電界発光層により発光される光線の波長の範囲で共振光空洞を形成し、前記電極の少なくとも1つと前記電界発光層に対してこの電極と同じ側に位置される前記反射層とが、前記発光される光線に対して透明または半透明である、
ダイオードであって、
透明または半透明である前記電極と前記反射層とを介し、前記有機電界発光層に光学的に結合する光入射部と、
前記ダイオードの外側に向かい、前記入射部よりは小さい面積を有する光出射部と、
前記入射部と前記出射部とにより区切られた反射性側壁と、
を備える少なくとも1つの光抽出器と、を含み、
前記抽出器の前記反射性側壁は、前記下部反射層と前記上部反射層の垂直方向に向かう面に対して対称な対となるか、又は前記下部反射層と前記上部反射層の垂直方向に向かう対称軸を有し、
前記側壁と、前記下部反射層と前記上部反射層の垂直方向に向かう断面であり、前記対称面に直交する断面であるこの側壁の任意の断面とが、または前記対称軸を通る任意の断面とが交差する2つの線のそれぞれは放物線であり、
第1の点および第2の点(E’、E)は、前記交差する第1および第2の線上にある入射部の端部をそれぞれ示し、第3の点および第4の点(F’、F)は、前記交差する第1および第2の線上にある出射部の端部をそれぞれ示す場合、第1の点E’から第3の点F’を結ぶ前記放物線の一方は、第4の点Fを焦点として有するとともに、線EF’に平行であって第4の点Fを通る直線を軸として有し、第2の点Eから第4の点Fを結ぶ前記放物線の他方は、第3の点F’を焦点として有するとともに、線E’Fに平行であって第3の点F’を通る直線を軸として有する、前記ダイオード。 - 前記少なくとも1つの抽出器の前記反射性側壁は、異なる光学的屈折率を有する2つの透明材料間の界面により形成され、
これらの壁の形状とこれらの光学的屈折率の差は、前記発光光線が前記抽出器の内部からおよびその入射部から来て、前記壁にぶつかり、全内部反射により反射して前記壁を離れるように適応される、請求項1に記載のダイオード。 - 前記反射性側壁は、金属化されている、請求項1に記載のダイオード。
- 前記抽出器を複数含む、請求項1乃至3のいずれか1項に記載のダイオード。
- 前記ダイオードが同一の基板上に分布している、請求項1乃至4のいずれか1項に記載のダイオードを複数備える画像ディスプレイ。
- 前記ダイオードが行および列状に配列され、抽出器のそれぞれが任意の1つの列のいくつかのダイオードに共通である、請求項5に記載の画像ディスプレイ。
- 前記画像ディスプレイに適合するように前記列が垂直方向に配列された時に、任意の1列のいくつかのダイオードに共通な抽出器のそれぞれの前記反射性側壁は、前記垂直方向に向かい、前記列に平行である面に関して対称な対である、請求項6に記載の画像ディスプレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0553343A FR2893215A1 (fr) | 2005-11-04 | 2005-11-04 | Diode organique electroluminescente a cavite optique de resonnance et a extracteur servant de filtre spatial de lumiere |
FR0553343 | 2005-11-04 | ||
PCT/EP2006/067978 WO2007051799A1 (fr) | 2005-11-04 | 2006-10-31 | Diode organique electroluminescente a cavite optique de resonnance et a extracteur servant de filtre spatial de lumiere |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009515347A JP2009515347A (ja) | 2009-04-09 |
JP5193872B2 true JP5193872B2 (ja) | 2013-05-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008539400A Active JP5193872B2 (ja) | 2005-11-04 | 2006-10-31 | 空間光フィルタとして機能を果たす共振光空洞と抽出器を有する有機発光ダイオード |
Country Status (8)
Country | Link |
---|---|
US (1) | US7986091B2 (ja) |
EP (1) | EP1943882B1 (ja) |
JP (1) | JP5193872B2 (ja) |
KR (1) | KR101297270B1 (ja) |
DE (1) | DE602006005704D1 (ja) |
FR (1) | FR2893215A1 (ja) |
TW (1) | TWI419602B (ja) |
WO (1) | WO2007051799A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090082918A (ko) * | 2006-11-17 | 2009-07-31 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 고효율 발광 물품 및 그 형성 방법 |
CN101536201A (zh) * | 2006-11-17 | 2009-09-16 | 3M创新有限公司 | 具有光学提取器的平面化发光二极管 |
JP2010146955A (ja) * | 2008-12-22 | 2010-07-01 | Panasonic Electric Works Co Ltd | 有機el発光装置 |
WO2010148389A2 (en) * | 2009-06-20 | 2010-12-23 | Wayne State University | Light funnel |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814416A (en) * | 1996-04-10 | 1998-09-29 | Lucent Technologies, Inc. | Wavelength compensation for resonant cavity electroluminescent devices |
JP3508741B2 (ja) * | 2001-06-05 | 2004-03-22 | ソニー株式会社 | 表示素子 |
JP2003109775A (ja) * | 2001-09-28 | 2003-04-11 | Sony Corp | 有機電界発光素子 |
US6833667B2 (en) * | 2002-02-27 | 2004-12-21 | Matsushita Electric Industrial Co., Ltd. | Organic electroluminescence element and image forming apparatus or portable terminal unit using thereof |
JP2003317931A (ja) * | 2002-04-26 | 2003-11-07 | Canon Inc | El素子、およびその素子を用いた表示装置 |
JP4208526B2 (ja) * | 2002-09-12 | 2009-01-14 | キヤノン株式会社 | 有機elディスプレイ装置及び該ディスプレイ装置を有する電子機器 |
JP4032918B2 (ja) * | 2002-10-24 | 2008-01-16 | ソニー株式会社 | 表示装置およびその製造方法 |
JP4475942B2 (ja) * | 2003-12-26 | 2010-06-09 | 三洋電機株式会社 | 表示装置及びその製造方法 |
US7408201B2 (en) * | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
US7057339B2 (en) * | 2004-04-08 | 2006-06-06 | Eastman Kodak Company | OLED with color change media |
-
2005
- 2005-11-04 FR FR0553343A patent/FR2893215A1/fr active Pending
-
2006
- 2006-10-31 US US12/084,496 patent/US7986091B2/en active Active
- 2006-10-31 DE DE602006005704T patent/DE602006005704D1/de active Active
- 2006-10-31 JP JP2008539400A patent/JP5193872B2/ja active Active
- 2006-10-31 WO PCT/EP2006/067978 patent/WO2007051799A1/fr active Application Filing
- 2006-10-31 KR KR1020087010168A patent/KR101297270B1/ko active IP Right Grant
- 2006-10-31 EP EP06819202A patent/EP1943882B1/fr active Active
- 2006-11-03 TW TW095140645A patent/TWI419602B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7986091B2 (en) | 2011-07-26 |
KR20080064131A (ko) | 2008-07-08 |
US20090302741A1 (en) | 2009-12-10 |
EP1943882A1 (fr) | 2008-07-16 |
DE602006005704D1 (de) | 2009-04-23 |
EP1943882B1 (fr) | 2009-03-11 |
TWI419602B (zh) | 2013-12-11 |
JP2009515347A (ja) | 2009-04-09 |
KR101297270B1 (ko) | 2013-08-14 |
FR2893215A1 (fr) | 2007-05-11 |
TW200719761A (en) | 2007-05-16 |
WO2007051799A1 (fr) | 2007-05-10 |
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