JP5190520B2 - 金属酸化物を使用する大容量ワンタイムプログラマブルメモリセル - Google Patents
金属酸化物を使用する大容量ワンタイムプログラマブルメモリセルInfo
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- JP5190520B2 JP5190520B2 JP2010540628A JP2010540628A JP5190520B2 JP 5190520 B2 JP5190520 B2 JP 5190520B2 JP 2010540628 A JP2010540628 A JP 2010540628A JP 2010540628 A JP2010540628 A JP 2010540628A JP 5190520 B2 JP5190520 B2 JP 5190520B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
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- Chemical & Material Sciences (AREA)
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- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
本願は、2007年12月27日に出願された米国特許出願第12/005,277号(特許文献1)からの利益を主張し、その全体があらゆる目的のために本願明細書において参照により援用されている。
セルは各セルが実現できるデータ状態の数だけ異なる状態にすることもできる。供給された印加電圧の下でのセルを通過する電流、またはセルの中のトランジスタのしきい値電圧などのように、検出することができるセルの何らかの特性を変更することによって、データ状態を保存できる。セルのデータ状態はデータ「0」、またはデータ「1」などの識別可能な値である。
他のメモリセルでは、カルコゲン化物のような比較的エキゾチックな素材の抵抗率を変えることによって、動作させられる。カルコゲン化物は動作させるのが難しく、ほとんどの半導体生産施設に挑戦を呈上することができる。
このように、構造的に半導体材料を使用することで形成された消去可能またはマルチ状態記憶のセルを持った不揮発性メモリアレイは、容易に小型にスケーリングでき、そして、1ビット/セルを越える(すなわち、2ビット/セル以上の)容量を持っていることが望ましい。
しかし、ポリシリコン抵抗器のメモリアレイを生成することは困難を呈する。抵抗器が大容量クロスポイントアレイのメモリセルとして使用される場合、選択されたセルに電圧が印加されると、アレイ全体の半選択されたセルと選択されていないセルを通して不必要な漏洩が発生することがある。例えば、図1において、選択されたセルSをセットするか、リセットするか、またはセンスするためにビット線Bとワード線Aの間に電圧が印加されると仮定すると、電流は選択されたセルSを通して流れようとする。しかし、いくつかの漏洩電流が代替経路、例えば選ばれていないセルU1、U2、およびU3を通して、ビット線Bとワード線Aの間を流れることがある。そのような多くの代替経路が存在することがある。
金属酸化膜はどのような抵抗率スイッチング金属酸化膜であってもよく、ペロブスカイトのような、CaTiO3 、(Ba、Sr)TiO3 、またはNiO、Nb2 O5 、TiO2 、HfO2 、Al2 O3 、MgO、CrO2 、ZnO2 、ZrO2 、VO、またはTa2 O5 などである。本発明の好適な実施形態における金属酸化物の厚さは、望ましくは約20〜1000Åであり、より望ましくは約40〜400Å、または70〜100Åであってもよい。
基板上に形成されたモノリシックな三次元メモリアレイは、少なくとも最初の高さで基板上に形成された最初のメモリレベルと、最初の高さと異なる2番目の高さで形成された第2のメモリレベルとを含む。3、4、8、またはそのような多階層アレイのどんな数のメモリレベルでも実際に基板上に形成できる。
Claims (20)
- 不揮発性メモリセルをプログラムする方法であって、
少なくとも1つの金属酸化物と直列接続したダイオードを含む不揮発性メモリセルを準備するステップと、
金属酸化物の抵抗率状態を最初の状態から2番目の状態に変えるために最初のフォワードバイアスを印加するステップと、
金属酸化物の抵抗率状態を2番目の状態から3番目の状態に変えるために2番目のフォワードバイアスを印加するステップと、
金属酸化物の抵抗率状態を3番目の状態から4番目の状態に変えるために3番目のフォワードバイアスを印加するステップと、を含み、
4番目の抵抗率状態は3番目の抵抗率状態より高く、3番目の抵抗率状態は2番目の抵抗率状態より低く、2番目の抵抗率状態は最初の抵抗率状態より低い方法。 - 請求項1記載の方法であって、
ダイオードはステアリング要素を含み、金属酸化物は抵抗率スイッチ要素を含む方法。 - 請求項1記載の方法であって、
不揮発性メモリセルはワンタイムプログラマブルセルであり、ダイオードはpinポリシリコンダイオードを含む方法。 - 請求項1記載の方法であって、
金属酸化物は、ペロブスカイト、NiO、Nb2 O5 、TiO2 、HfO2 、Al2 O3 、MgO、CrO2 、ZnO2 、ZrO2 、VO、またはTa2 O5 を含む方法。 - 請求項4記載の方法であって、
金属酸化物は、CaTiO3 または(Ba、Sr)TiO3 を含むペロブスカイトである方法。 - 請求項1記載の方法であって、
金属酸化物は、ダイオードよりも高い抵抗率を有するものである方法。 - 請求項1記載の方法であって、
金属酸化物の厚みは、約20〜約1000Åである方法。 - 請求項1記載の方法であって、
金属酸化物の厚みは、約40〜約400Åである方法。 - 請求項1記載の方法であって、
メモリセルは、不揮発性メモリセルのモノリシックな三次元アレイの一部から成る方法。 - 請求項1記載の方法であって、
最初のフォワードバイアスは、2番目のフォワードバイアスより小さい方法。 - 請求項1記載の方法であって、
2番目のフォワードバイアスは、3番目のフォワードバイアスより大きい方法。 - 請求項1記載の方法であって、
2番目のフォワードバイアスは、最初のまたは3番目のフォワードバイアスより大きく、
2番目のフォワードバイアスは、最初のフォワードバイアスより高い電流制限で印加され、
3番目のフォワードバイアスは、2番目のフォワードバイアスより高い電流制限で印加される方法。 - 請求項1記載の方法であって、
4番目の抵抗率状態は、最初と2番目の抵抗率状態の間の中間である方法。 - 請求項1記載の方法であって、
最初、2番目、および3番目のフォワードバイアス範囲は、1〜20Vである方法。 - 請求項1記載の方法であって、
最初、2番目、および3番目のフォワードバイアス範囲は、2〜10Vである方法。 - 請求項1記載の方法であって、
最初、2番目、および3番目のフォワードバイアス範囲は、3〜8Vである方法。 - デバイスであって、
金属酸化物抵抗率スイッチ要素と直列接続したダイオードステアリング要素を含む、少なくとも1つの不揮発性メモリセルと、
金属酸化物の抵抗率状態を最初の状態から2番目の状態に変えるために最初のフォワードバイアスを印加し、金属酸化物の抵抗率状態を2番目の状態から3番目の状態に変えるために2番目のフォワードバイアスを印加し、金属酸化物の抵抗率状態を3番目の状態から4番目の状態に変えるために3番目のフォワードバイアスを印加し、少なくとも1つの不揮発性メモリセルをプログラムする手段であって、これにより、4番目の抵抗率状態が3番目の抵抗率状態より高く、3番目の抵抗率状態が2番目の抵抗率状態より低く、3番目の抵抗率状態は最初の抵抗率状態より低くなる、プログラムする手段と、
を備えるデバイス。 - 請求項17記載のデバイスであって、
金属酸化物は、ダイオードよりも高い抵抗率を有するものであり、
プログラムする手段は、駆動回路を含むデバイス。 - 請求項17記載のデバイスであって、
不揮発性メモリセルのモノリシックな三次元アレイを含むデバイス。 - 請求項17記載のデバイスであって、
メモリセルは、ワンタイムプログラマブルセルであり、
ダイオードは、pinポリシリコンダイオードを含み、
金属酸化物は、ペロブスカイト、NiO、Nb2 O5 、TiO2 、HfO2 、Al2 O3 、MgO、CrO2 、ZnO2 、ZrO2 、VO、またはTa2 O5 を含むデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/005,277 US7706169B2 (en) | 2007-12-27 | 2007-12-27 | Large capacity one-time programmable memory cell using metal oxides |
US12/005,277 | 2007-12-27 | ||
PCT/US2008/012478 WO2009085076A1 (en) | 2007-12-27 | 2008-11-05 | Large capacity one-time programmable memory cell using metal oxides |
Publications (2)
Publication Number | Publication Date |
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JP2011508360A JP2011508360A (ja) | 2011-03-10 |
JP5190520B2 true JP5190520B2 (ja) | 2013-04-24 |
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JP2010540628A Expired - Fee Related JP5190520B2 (ja) | 2007-12-27 | 2008-11-05 | 金属酸化物を使用する大容量ワンタイムプログラマブルメモリセル |
Country Status (7)
Country | Link |
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US (1) | US7706169B2 (ja) |
EP (1) | EP2232499B1 (ja) |
JP (1) | JP5190520B2 (ja) |
KR (1) | KR20100097738A (ja) |
CN (1) | CN101911206B (ja) |
TW (1) | TW200929220A (ja) |
WO (1) | WO2009085076A1 (ja) |
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2007
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2008
- 2008-11-05 CN CN200880122646.XA patent/CN101911206B/zh not_active Expired - Fee Related
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- 2008-11-05 KR KR1020107015687A patent/KR20100097738A/ko not_active Application Discontinuation
- 2008-11-05 JP JP2010540628A patent/JP5190520B2/ja not_active Expired - Fee Related
- 2008-11-05 WO PCT/US2008/012478 patent/WO2009085076A1/en active Application Filing
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KR20100097738A (ko) | 2010-09-03 |
US20090168486A1 (en) | 2009-07-02 |
TW200929220A (en) | 2009-07-01 |
CN101911206B (zh) | 2014-04-02 |
EP2232499A1 (en) | 2010-09-29 |
WO2009085076A1 (en) | 2009-07-09 |
EP2232499B1 (en) | 2014-07-16 |
CN101911206A (zh) | 2010-12-08 |
US7706169B2 (en) | 2010-04-27 |
JP2011508360A (ja) | 2011-03-10 |
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