JP5185356B2 - 第4族金属含有膜を堆積させるための液体前駆体 - Google Patents
第4族金属含有膜を堆積させるための液体前駆体 Download PDFInfo
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- JP5185356B2 JP5185356B2 JP2010272828A JP2010272828A JP5185356B2 JP 5185356 B2 JP5185356 B2 JP 5185356B2 JP 2010272828 A JP2010272828 A JP 2010272828A JP 2010272828 A JP2010272828 A JP 2010272828A JP 5185356 B2 JP5185356 B2 JP 5185356B2
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- titanium
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- bis
- ethoxy
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- 229910052751 metal Inorganic materials 0.000 title claims description 66
- 239000002184 metal Substances 0.000 title claims description 65
- 238000000151 deposition Methods 0.000 title claims description 18
- 239000012705 liquid precursor Substances 0.000 title 1
- -1 tert-amyl Chemical group 0.000 claims description 119
- 239000002243 precursor Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 42
- 238000005229 chemical vapour deposition Methods 0.000 claims description 39
- 239000010936 titanium Substances 0.000 claims description 39
- 229910052719 titanium Inorganic materials 0.000 claims description 37
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 34
- 125000000217 alkyl group Chemical group 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 31
- NNRZFZBJEDXBPK-UHFFFAOYSA-N ethanolate;titanium(3+) Chemical compound [Ti+3].CC[O-].CC[O-].CC[O-] NNRZFZBJEDXBPK-UHFFFAOYSA-N 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 23
- MBMKFKOVXPKXCV-UHFFFAOYSA-N CCO[Ti]OCC Chemical compound CCO[Ti]OCC MBMKFKOVXPKXCV-UHFFFAOYSA-N 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 17
- ZKWONARDNQWFKT-UHFFFAOYSA-N methanolate;titanium(2+) Chemical compound CO[Ti]OC ZKWONARDNQWFKT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 9
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- KBHBDZQAQRNXRB-UHFFFAOYSA-N propan-2-olate;titanium(3+) Chemical compound [Ti+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] KBHBDZQAQRNXRB-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 6
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 125000000962 organic group Chemical group 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 claims 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 25
- 239000007983 Tris buffer Substances 0.000 description 12
- 238000002411 thermogravimetry Methods 0.000 description 11
- 239000000725 suspension Substances 0.000 description 10
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 9
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000005160 1H NMR spectroscopy Methods 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000000113 differential scanning calorimetry Methods 0.000 description 4
- 229910003002 lithium salt Inorganic materials 0.000 description 4
- 159000000002 lithium salts Chemical class 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- JDQLUYWHCUWSJE-UHFFFAOYSA-N methanolate;titanium(3+) Chemical compound [Ti+3].[O-]C.[O-]C.[O-]C JDQLUYWHCUWSJE-UHFFFAOYSA-N 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 150000003608 titanium Chemical class 0.000 description 3
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VZAZGZGOLSBZLL-UHFFFAOYSA-N CC(C)O[Zr](OC(C)C)OC(C)C Chemical compound CC(C)O[Zr](OC(C)C)OC(C)C VZAZGZGOLSBZLL-UHFFFAOYSA-N 0.000 description 2
- FTZAETFEOGHEMA-UHFFFAOYSA-N CCO[Hf](OCC)OCC Chemical compound CCO[Hf](OCC)OCC FTZAETFEOGHEMA-UHFFFAOYSA-N 0.000 description 2
- SAIHNRAAWMQBOH-UHFFFAOYSA-N CO[Zr](OC)OC Chemical compound CO[Zr](OC)OC SAIHNRAAWMQBOH-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 240000007817 Olea europaea Species 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 150000003857 carboxamides Chemical class 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013058 crude material Substances 0.000 description 2
- 150000004292 cyclic ethers Chemical class 0.000 description 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 2
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 2
- GOVWJRDDHRBJRW-UHFFFAOYSA-N diethylazanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC GOVWJRDDHRBJRW-UHFFFAOYSA-N 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 2
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 2
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- 239000003446 ligand Substances 0.000 description 2
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- KVKAPJGOOSOFDJ-UHFFFAOYSA-N CN(C)[Ta] Chemical compound CN(C)[Ta] KVKAPJGOOSOFDJ-UHFFFAOYSA-N 0.000 description 1
- HIFKDYKKZWTZPO-UHFFFAOYSA-N CO[Hf](OC)OC Chemical compound CO[Hf](OC)OC HIFKDYKKZWTZPO-UHFFFAOYSA-N 0.000 description 1
- MWQHKYSDGQRIIV-UHFFFAOYSA-L Cc1cc(c(C)[nH]1)[Ti](Cl)(Cl)C1CCCC1 Chemical compound Cc1cc(c(C)[nH]1)[Ti](Cl)(Cl)C1CCCC1 MWQHKYSDGQRIIV-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- NLVMJJIAVUPBFQ-UHFFFAOYSA-N N1C=CC=C1.[Zr] Chemical compound N1C=CC=C1.[Zr] NLVMJJIAVUPBFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001409 amidines Chemical class 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- PPJPTAQKIFHZQU-UHFFFAOYSA-N bis(tert-butylimino)tungsten;dimethylazanide Chemical compound C[N-]C.C[N-]C.CC(C)(C)N=[W]=NC(C)(C)C PPJPTAQKIFHZQU-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- MTKOCRSQUPLVTD-UHFFFAOYSA-N butan-1-olate;titanium(2+) Chemical compound CCCCO[Ti]OCCCC MTKOCRSQUPLVTD-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000001983 dialkylethers Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 150000002542 isoureas Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- AZVCGYPLLBEUNV-UHFFFAOYSA-N lithium;ethanolate Chemical compound [Li+].CC[O-] AZVCGYPLLBEUNV-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SBOJXQVPLKSXOG-UHFFFAOYSA-N o-amino-hydroxylamine Chemical class NON SBOJXQVPLKSXOG-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic System without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Description
1.(2,5−ジ−tert−ブチルピロリル)(トリス(メトキシ)チタン
2.(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタン
3.(2,5−ジ−tert−アミルピロリル)(トリス(メトキシ)チタン
4.(2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)チタン
5.(2,5−ジ−tert−アミルピロリル)(トリス(イソ−プロポキシ)チタン
6.(2,3,5−トリ−tert−ブチルピロリル)(トリス(メトキシ)チタン
7.(2,3,5−トリ−tert−ブチルピロリル)(トリス(エトキシ)チタン
8.(2,3,5−トリ−tert−ブチルピロリル)(トリス(イソ−プロポキシ)チタン
9.(2,3,5−トリ−tert−アミルピロリル)(トリス(メトキシ)チタン
10.(2,3,5−トリ−tert−アミルピロリル)(トリス(エトキシ)チタン
11.(2,3,5−トリ−tert−アミルピロリル)(トリス(イソ−プロポキシ)チタン
12.(2,3,4,5−テトラメチルピロリル)(トリス(メトキシ)チタン
13.(2,3,4,5−テトラメチルピロリル)(トリス(エトキシ)チタン
14.(2,3,4,5−テトラメチルピロリル)(トリス(イソプロポキシ)チタン
15.(2,5−ジ−tert−アミルピロリル)(トリス(メトキシ)ジルコニウム
16.(2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)ジルコニウム
17.(2,5−ジ−tert−アミルピロリル)(トリス(イソ−プロポキシ)ジルコニウム
18.(2,3,5−トリ−tert−アミルピロリル)(トリス(メトキシ)ジルコニウム
19.(2,3,5−トリ−tert−アミルピロリル)(トリス(エトキシ)ジルコニウム
20.(2,3,5−トリ−tert−アミルピロリル)(トリス(イソ−プロポキシ)ジルコニウム
21.(2,5−ジ−tert−アミルピロリル)(トリス(メトキシ)ハフニウム
22.(2,5−ジ−tert−アミルピロリル)(トリス(イソ−プロポキシ)ハフニウム
23.(2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)ハフニウム
24.(テトラメチルピロリル)(トリス(エトキシ)ハフニウム
25.(2,3,4,5−テトラメチルピロリル)(トリス(イソプロピル)ハフニウム
1.(シクロペンタジエニル)(2−メチルピロリル)(ビス(エトキシ)チタン
2.(メチルシクロペンタジエニル)(2−メチルピロリル)(ビス(エトキシ)チタン
3.(エチルシクロペンタジエニル)(2−メチルピロリル)(ビス(エトキシ)チタン
4.(プロピルシクロペンタジエニル)(2−メチルピロリル)(ビス(エトキシ)チタン
5.(シクロペンタジエニル)(2−メチルピロリル)(ビス(メトキシ)チタン
6.(メチルシクロペンタジエニル)(2−メチルピロリル)(ビス(メトキシ)チタン
7.(エチルシクロペンタジエニル)(2−メチルピロリル)(ビス(メトキシ)チタン
8.(プロピルシクロペンタジエニル)(2−メチルピロリル)(ビス(メトキシ)チタン
9.(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン
10.(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン
11.(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン
12.(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン
13.(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン
14.(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン
15.(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン
16.(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン
[(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタンの合成]
室温でヘキサン50mL中2,5−ジ−tert−ブチルピロリルのリチウム塩4.24g(22.88mmol)の白色懸濁液にヘキサン25mL中TiCl(EtO)35.0g(22.88mmol)を添加した。白色懸濁液は、TiCl(EtO)3を添加すると泥のような色及び稠度になった。反応混合物を数時間還流した後、懸濁液を濾過した。濾液をポンプで真空引きして7.53gの赤褐色の液体を得た。200mTorr下100℃での真空蒸留によりイエローアンバー色のわずかに粘性のある液体5.9gを得た。収率は71%であった。
1H−NMR(500MHz,C6D6)δ(ppm):6.39(s,2H),4.34(q,6H),1.51(s,18H),1.16(t,9H)
[(2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)チタンの合成]
室温でヘキサン100mL中2,5−ジ−tert−アミルピロリルのリチウム塩9.91g(46.45mmol)の白色懸濁液にヘキサン50mL中TiCl(EtO)310.15g(46.45mmol)を添加した。白色懸濁液は、TiCl(EtO)3を添加するとオリーブグリーン色になった。反応混合物を16時間還流した後、懸濁液を濾過した。濾液をポンプで真空引きして17.49gのオリーブグリーンの液体を得た。おおよその収率は97%であった。
1H−NMR(500MHz,C6D6)δ(ppm):6.39(s,2H),4.36(q,6H),1.71(q,4H),1.52(s,12H),1.16(t,9H),0.79(t,6H)
[(2,5−ジ−tert−ブチルピロリル)(トリス(イソ−プロポキシ)チタンの合成]
室温でヘキサン40mL中2,5−ジ−tert−ブチルピロリルのリチウム塩3.55g(19.19mmol)の白色懸濁液にヘキサン10mL中TiCl(OPri)35.00g(19.19mmol)を添加した。白色懸濁液は、TiCl(OPri)3を添加すると泥のような色になった。反応混合物を16時間還流した後、懸濁液を濾過した。濾液をポンプで真空引きして暗褐色の液体を得た。粗材料を真空蒸留にさらし、200mTorrの真空下で130℃に加熱した。アンバー色の液体4.41gに変化した。収率は57%であった。
1H−NMR(500MHz,C6D6)δ(ppm):6.37(s,2H),4.64(m,3H),1.54(s,18H),1.20(d,18H)
[(2,5−ジ−メチルピロリル)(トリス(エトキシ)チタン二量体の合成]
−40℃でTHF30mL中クロロトリス(エトキシ)チタン2.0g(9.15mmol)の溶液に、THF20mL中の懸濁液としての2,5−ジメチルピロリルのリチウム塩0.93g(9.15mmol)を添加した。得られた反応混合物は暗赤褐色に変化した。反応物を16時間攪拌した後、揮発性物質を真空下で除去して、75mLのヘキサンで抽出される赤紫色の固体を得た。濾過及びヘキサンの除去により収率94%で赤褐色の固体2.40gを得た。
1H−NMR(500MHz,C6D6)δ(ppm):6.06,5.89(two s,2H,pyr*),4.20,4.02(two quartets,6H,OCH2CH3),2.56,2.42(two s,6H,pyr*のCH3),1.05,0.93(two triplets,9H,OCH2CH3)
[(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタンの合成]
トルエン30mL中ビス(クロロ)(2,5−ジメチルピロリル)(シクロペンタニル)チタン1.0g(3.60mmol)の溶液にリチウムエトキシド0.37g(7.19mmol)を直接添加した。反応物を16時間程度還流した後、揮発性物質の除去及びヘキサンによる抽出で赤褐色のろう様の固体0.94gを得た。加えて、ヘキサンによる抽出の不溶性固体がLiClについて予測される量の範囲内であった。粗材料について0.20torrの真空下110℃で16時間程度にわたり昇華を実施した。少量の塊状の赤橙色の固体が昇華装置のコールドフィンガーから回収された。昇華装置の底部に残った油状の残留物は冷却後に結晶性の固体になった。おおよその収率は88%であった。(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタンの融点は、DSCによって78℃と測定される。
1H−NMR(500MHz,C6D6)δ(ppm):6.21(s,2H,pyr*),5.93(s,5H,Cp),4.09(q,4H,OCH2CH3),2.28(s,6H,pyr*のCH3),0.96(t,6H,OCH2CH3)
[(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタンを用いたTiO2のALD]
本例では、(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタンとオゾンを用いたTiO2のALDが記載される。堆積温度の範囲は200〜400℃である。堆積チャンバーの圧力は約1.5Torrである。(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタンのための容器は100℃で保持した。TiO2のALD又はCCVDの1サイクルは4工程からなる。
1.キャリアガスとしてのArでバブリングすることによりチタン前駆体を導入
2.Arでチタン前駆体上の残留物を除去するためのArパージ
3.堆積チャンバーへのオゾンの導入
4.未反応オゾンを除去するためのArパージ
Claims (21)
- (2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタンを含む、請求項1に記載の前駆体。
- (2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)チタンを含む、請求項1に記載の前駆体。
- (2,5−ジ−tert−アミルピロリル)(トリス(イソ−プロポキシ)チタンを含む、請求項1に記載の前駆体。
- 以下の式、すなわち、
- 前記第4属金属がチタン、ジルコニウム及びハフニウムからなる群より選択される、請求項5に記載の前駆体。
- 前記第4族金属前駆体が(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−tert−アミルピロリル)(ビス(エトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−tert−ブチルピロリル)(ビス(エトキシ)チタンからなる群より選択される、請求項6に記載の前駆体。
- 前記第4族金属前駆体が室温で液体である、請求項5に記載の前駆体。
- 前記第4族金属前駆体が80℃よりも低い融点を有する固体である、請求項5に記載の前駆体。
- R1-2が同じであることができるか又は異なることができそして直鎖又は分枝のC1-3アルキルからなる群より選択される、請求項5に記載の前駆体。
- R4が分枝のC1-5アルキルからなる群より選択される、請求項5に記載の前駆体。
- R4がメチル、エチル、プロピル、tert−ブチル、tert−アミルからなる群より選択され、ピロール環の2及び5位において置換されている、請求項11に記載の前駆体。
- 溶媒を含有する請求項5に記載の前駆体。
- 原子層堆積(ALD)、化学気相成長(CVD)、サイクリック化学気相成長(CCVD)、金属有機化学気相成長(MOCVD)、熱化学気相成長、プラズマ化学気相成長(PECVD)、光子補助化学気相成長(PACVD)、プラズマ−光子補助化学気相成長(PPECVD)、低温化学気相成長、化学補助気相成長、熱フィラメント化学気相成長、及びプラズマサイクリックALD(PEALD)からなる群より選択される方法によってチタン金属含有膜を堆積させるための方法であって、
- 前記チタン金属前駆体が(2,5−ジ−tert−ブチルピロリル)(トリス(エトキシ)チタン、(2,5−ジ−tert−アミルピロリル)(トリス(エトキシ)チタン、(2,5−ジ−tert−アミルピロリル)(トリス(イソ−プロポキシ)チタン、及びそれらの混合物からなる群より選択される、請求項14に記載の方法。
- 前記チタン金属前駆体が溶媒を含む、請求項14に記載の方法。
- 前記チタン金属含有膜が熱及びプラズマからなる群より選択される堆積後処理にさらされて該チタン金属含有膜が高密度化される、請求項14に記載の方法。
- 原子層堆積(ALD)、化学気相成長(CVD)、サイクリック化学気相成長(CCVD)、金属有機化学気相成長(MOCVD)、熱化学気相成長、プラズマ化学気相成長(PECVD)、光子補助化学気相成長(PACVD)、プラズマ−光子補助化学気相成長(PPECVD)、低温化学気相成長、化学補助気相成長、熱フィラメント化学気相成長、及びプラズマサイクリックALD(PEALD)からなる群より選択される方法によって第4族金属含有膜を堆積させるための方法であって、以下の式、すなわち、
- 前記膜が熱及びプラズマからなる群より選択される堆積後処理にさらされて該膜が高密度化される、請求項18に記載の方法。
- 前記第4族金属前駆体が(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(エトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(メチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(エチルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(プロピルシクロペンタジエニル)(2,5−ジ−メチルピロリル)(ビス(メトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−tert−アミルピロリル)(ビス(エトキシ)チタン、(シクロペンタジエニル)(2,5−ジ−tert−ブチルピロリル)(ビス(エトキシ)チタン、及びそれらの混合物からなる群より選択される、請求項18に記載の方法。
- オクタン、エチルシクロヘキサン、ドデカン、トルエン、キシレン、メシチレン、ジエチルベンゼン、及びそれらの混合物からなる群より選択される溶媒を含む、請求項20に記載の方法。
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