JP5185003B2 - 放射線検出器 - Google Patents

放射線検出器 Download PDF

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Publication number
JP5185003B2
JP5185003B2 JP2008192778A JP2008192778A JP5185003B2 JP 5185003 B2 JP5185003 B2 JP 5185003B2 JP 2008192778 A JP2008192778 A JP 2008192778A JP 2008192778 A JP2008192778 A JP 2008192778A JP 5185003 B2 JP5185003 B2 JP 5185003B2
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JP
Japan
Prior art keywords
layer
amorphous selenium
arsenic
electric field
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008192778A
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English (en)
Japanese (ja)
Other versions
JP2010034166A (ja
Inventor
功一 小楠
修 中根
泰則 伊ヶ崎
憲伯 岡村
忠明 平井
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Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2008192778A priority Critical patent/JP5185003B2/ja
Priority to EP09800446.8A priority patent/EP2312649A4/fr
Priority to KR1020107023475A priority patent/KR20110050402A/ko
Priority to US13/054,942 priority patent/US8415662B2/en
Priority to CA2731307A priority patent/CA2731307C/fr
Priority to PCT/JP2009/063212 priority patent/WO2010010932A1/fr
Publication of JP2010034166A publication Critical patent/JP2010034166A/ja
Application granted granted Critical
Publication of JP5185003B2 publication Critical patent/JP5185003B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2008192778A 2008-07-25 2008-07-25 放射線検出器 Expired - Fee Related JP5185003B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008192778A JP5185003B2 (ja) 2008-07-25 2008-07-25 放射線検出器
EP09800446.8A EP2312649A4 (fr) 2008-07-25 2009-07-23 Détecteur de rayonnement
KR1020107023475A KR20110050402A (ko) 2008-07-25 2009-07-23 방사선 검출기
US13/054,942 US8415662B2 (en) 2008-07-25 2009-07-23 Radiation detector having a plurality of amorphous selenium layers
CA2731307A CA2731307C (fr) 2008-07-25 2009-07-23 Detecteur de rayonnement
PCT/JP2009/063212 WO2010010932A1 (fr) 2008-07-25 2009-07-23 Détecteur de rayonnement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008192778A JP5185003B2 (ja) 2008-07-25 2008-07-25 放射線検出器

Publications (2)

Publication Number Publication Date
JP2010034166A JP2010034166A (ja) 2010-02-12
JP5185003B2 true JP5185003B2 (ja) 2013-04-17

Family

ID=41570392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008192778A Expired - Fee Related JP5185003B2 (ja) 2008-07-25 2008-07-25 放射線検出器

Country Status (6)

Country Link
US (1) US8415662B2 (fr)
EP (1) EP2312649A4 (fr)
JP (1) JP5185003B2 (fr)
KR (1) KR20110050402A (fr)
CA (1) CA2731307C (fr)
WO (1) WO2010010932A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090191506A1 (en) 2008-01-29 2009-07-30 Clark David J Dental Composite Dispenser For Injection Molded Filling Techniques
WO2012066771A1 (fr) * 2010-11-17 2012-05-24 パナソニック株式会社 Capteur radiologique, procédé d'essai du capteur radiologique et dispositif de diagnostic radiographique équipé du capteur radiologique
WO2014015285A2 (fr) * 2012-07-19 2014-01-23 The Research Foundation Détecteur de photodiodes à avalanche à puits multiples et à conformation de champ pour des diodes à sélénium amorphe à conversion directe
DE102013202630B4 (de) * 2013-02-19 2017-07-06 Siemens Healthcare Gmbh Strahlungsdetektor und medizinisches Diagnosesystem
WO2015198388A1 (fr) * 2014-06-24 2015-12-30 パイオニア株式会社 Film de conversion photoélectrique et dispositif de capture d'image le comportant
BR112017002916A2 (pt) * 2014-12-05 2017-12-05 Koninklijke Philips Nv dispositivo detector de raios x para detecção de radiação de raio x a um ângulo inclinado em relação à radiação de raio x, sistema e método de imageamento por raios x, elemento de programa de computador para controlar um dispositivo ou um sistema, e mídia legível por computador
US10547015B2 (en) 2016-12-02 2020-01-28 The Research Foundation For The State University Of New York Fabrication method for fused multi-layer amorphous selenium sensor
JPWO2021070586A1 (fr) * 2019-10-07 2021-04-15

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193337A (ja) * 1985-02-20 1986-08-27 Hitachi Ltd 撮像管タ−ゲツト
US5233265A (en) * 1986-07-04 1993-08-03 Hitachi, Ltd. Photoconductive imaging apparatus
US4888521A (en) * 1986-07-04 1989-12-19 Hitachi Ltd. Photoconductive device and method of operating the same
US5198673A (en) * 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
JP3774492B2 (ja) * 1995-07-21 2006-05-17 日本放送協会 撮像素子及びその動作方法並びにその素子を用いた撮像装置、画像解析システム
CA2184667C (fr) * 1996-09-03 2000-06-20 Bradley Trent Polischuk Plaque multicouche pour la radiographie et methode de fabrication de cette plaque
JP3678162B2 (ja) 2001-04-12 2005-08-03 株式会社島津製作所 放射線検出装置
CA2363663C (fr) * 2001-11-22 2004-10-19 Ftni Inc. Detecteur a rayons x a ecran plat et a conversion directe avec suppression automatique des images fantomes
US7323692B2 (en) * 2004-08-10 2008-01-29 Research Foundation Of State University Of New York Flat-panel detector with avalanche gain
JP4266898B2 (ja) * 2004-08-10 2009-05-20 キヤノン株式会社 放射線検出装置とその製造方法および放射線撮像システム
JP5213378B2 (ja) * 2007-07-27 2013-06-19 富士フイルム株式会社 放射線検出器
JP5322468B2 (ja) * 2008-03-25 2013-10-23 富士フイルム株式会社 放射線検出器の製造方法及び成膜装置
JP5070130B2 (ja) * 2008-05-26 2012-11-07 富士フイルム株式会社 放射線検出器

Also Published As

Publication number Publication date
CA2731307A1 (fr) 2010-01-28
JP2010034166A (ja) 2010-02-12
CA2731307C (fr) 2017-01-03
KR20110050402A (ko) 2011-05-13
US20110163305A1 (en) 2011-07-07
WO2010010932A1 (fr) 2010-01-28
US8415662B2 (en) 2013-04-09
EP2312649A1 (fr) 2011-04-20
EP2312649A4 (fr) 2014-07-30

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