JP5178089B2 - 発光素子パッケージ用基板の製造方法および発光素子パッケージ - Google Patents
発光素子パッケージ用基板の製造方法および発光素子パッケージ Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 172
- 239000002184 metal Substances 0.000 claims description 172
- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 10
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- 238000003475 lamination Methods 0.000 claims description 5
- 238000004804 winding Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 113
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 238000007789 sealing Methods 0.000 description 10
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- 229910000679 solder Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004382 potting Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Led Device Packages (AREA)
Description
発光素子の実装位置下方に形成される金属肉厚部が絶縁層に埋め込まれて、その金属肉厚部の頂部側が前記絶縁層を貫通していない構造を備える発光素子パッケージ用基板の製造方法であって、
熱伝導性フィラーを含む樹脂から構成された1.0W/mK以上の熱伝導率を有する絶縁接着剤および金属層部材を有する積層体と、金属肉厚部を有する実装側金属層部材との、それぞれの部材を繰り出しながら、積層一体化して、前記金属肉厚部が前記絶縁層に埋め込まれた構造とする積層工程を有することを特徴とする。
次に、以上のような本発明の発光素子パッケージ用基板の好適な製造方法について図3、4を用いて説明する。図3、4に示すように、金属肉厚部2が形成された長尺状の金属層21を巻き取った金属層ロール体22を準備する。幅方向サイズ、金属肉厚部2の配置等は、適宜設定される。金属層21に金属肉厚部2を形成する方法は上記説明のとおりである。
(1)前述の実施形態では、フェイスアップ型の発光素子を搭載する例を示したが、本発明では、一対の電極を底面に備えるフェイスダウン型の発光素子を搭載してもよい。その場合、ソルダ接合を行うこと等によって、ワイヤボンディング等を不要にできる場合がある。また、発光素子の表面と裏面とに電極を有する場合には、ワイヤボンディング等を1本にすることが可能である。
2 金属肉厚部
3 表面電極部
4 発光素子
5 金属層
5a 金属パターン
7 封止樹脂
10 層間導通部
21 金属層
24 積層体
25 積層体
30a、30b ロール
31 表面電極部
40 板状体
51 金属パターン
Claims (4)
- 発光素子の実装位置下方に形成される金属肉厚部が絶縁層に埋め込まれて、その金属肉厚部の頂部側が前記絶縁層を貫通していない構造を備える発光素子パッケージ用基板の製造方法であって、
熱伝導性フィラーを含む樹脂から構成された1.0W/mK以上の熱伝導率を有する絶縁接着剤および金属層部材を有する積層体と、金属肉厚部を有する実装側金属層部材との、それぞれの部材を繰り出しながら、積層一体化して、前記金属肉厚部が前記絶縁層に埋め込まれた構造とする積層工程を有する発光素子パッケージ用基板の製造方法。 - 前記絶縁接着剤および金属層部材を有する積層体、および/または、金属肉厚部を有する金属層部材が、予めロール状である請求項1に記載の発光素子パッケージ用基板の製造方法。
- 前記積層工程の後に、ロール状に巻き取る工程を、さらに有する請求項1又は2に記載の発光素子パッケージ用基板の製造方法。
- 前記請求項1〜3のいずれか1項で製造された発光素子パッケージ用基板を用いた発光素子パッケージ。
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102222625A (zh) * | 2010-04-16 | 2011-10-19 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其基座的制造方法 |
US8835199B2 (en) * | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
KR101175764B1 (ko) * | 2010-12-29 | 2012-08-21 | 유종삼 | 방열 시트에 백시트를 코팅하는 방법 |
JP2013038254A (ja) * | 2011-08-09 | 2013-02-21 | Fusheng Industrial Co Ltd | 発光ダイオードの熱硬化性樹脂フレームの製造方法 |
WO2014184757A1 (en) * | 2013-05-15 | 2014-11-20 | Koninklijke Philips N.V. | Light emitting device with an optical element and a reflector |
WO2016080393A1 (ja) * | 2014-11-20 | 2016-05-26 | 日本精工株式会社 | 放熱基板 |
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JPH01253436A (ja) * | 1988-03-31 | 1989-10-09 | Sumitomo Chem Co Ltd | 金属ベースプリント基板及びその製造方法 |
JP4261713B2 (ja) * | 1999-12-20 | 2009-04-30 | パナソニック株式会社 | 熱伝導基板とその製造方法 |
JP2001244630A (ja) * | 2000-02-25 | 2001-09-07 | Kuraray Co Ltd | 多層配線回路基板およびその製造方法 |
JP3902169B2 (ja) * | 2003-09-08 | 2007-04-04 | 日東電工株式会社 | 配線回路基板の製造方法および製造装置 |
JP4255367B2 (ja) * | 2003-12-04 | 2009-04-15 | デンカAgsp株式会社 | 発光素子搭載用基板及びその製造方法 |
JP2006066519A (ja) * | 2004-08-25 | 2006-03-09 | Kyocera Corp | 発光素子用配線基板ならびに発光装置 |
JP2007067042A (ja) * | 2005-08-30 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 基板の製造方法 |
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