201025670 六、發明說明： 【發明所屬之技術領域】 本發明涉及LED晶片等發光元件的封裝之際所使用的 發光元件封裝用基板之製造方法，及使用以該製造方法所 製造的發光元件封裝用基板之發光元件封裝。 【先前技術】 近年來，作爲可輕量•薄型化及省電化照明·發光手 段、發光二極體備受矚目。發光二極體之裝配形態已知有， φ 直接裝配發光二極體之裸晶片（LED晶片）於配線基板之方 法，與爲使發光二極體易於裝配，將LED晶片接合於小型 基板而封裝化，並裝配該LED封裝於配線基板之方法。 - 丨， 習知LED封裝係於小型基板將LED晶片作晶粒接合， 將LED晶片之電極部分與導線的電極部分之間藉配線接合 等連接，以具透光性之封裝樹脂封裝而成之構造。 另一方面，LED晶片在作爲照明器具之通常使用溫度 範圍，具有溫度愈低發光效率愈高，溫度愈高發光效率愈 © 低之性質。因此，使用發光二極體之光源裝置其LED晶片 所產生之熱可予迅速散熱至外部，以降低LED晶片之溫 度，此於LED晶片之發光效率的提升係非常重要之課題。 而藉由改善散熱特性，可於LED晶片以通以大電流而使 用，增大LED晶片之光輸出》 因而，取代習知發光二極體，改善LED晶片之散熱特 性，於導熱性基板作LED晶片之直接晶粒接合之光源裝置 已有若干提議。例如，下述專利文獻1有，薄鋁板構成之 基板經壓製加工形成凹處，於其表面形成絕緣體薄膜後， -4- 201025670 於凹處底面介著絕緣體薄膜作LED晶片之晶粒接合，將形 成於絕緣體膜層上之配線圖案與LED晶片表面的電極之間 介著接合配線作電連接，將具透光性之封裝樹脂充塡於凹 處內者。可是，此基板有構造複雜，加工成本高之問題。 下述之專利文獻2揭示發光元件搭載用之基板，其具 備金屬基板、在該金屬基板之發光元件搭載位置蝕刻而形 成的金屬柱狀體（金屬凸部）、形成於該金屬柱狀體周圍之 絕緣層及形成在該金屬柱狀體附近之電極部。 φ 專利文獻1 日本專利特開2002-94 122號公報 專利文獻2 特開2005-1 67086號公報 【發明内容】 . > 發明所欲解決之課題 然而，經本發明人等之探討證實，裝配LED晶片於電 路板時，於其搭載位置設金屬柱狀體雖重要，但裝配LED 封裝時，未必須於配線基板設金屬柱狀體。亦即，證實裝 配LED封裝時，以含高導熱性無機塡料的樹脂用作搭載 Φ LED封裝之基板的絕緣層材料，可實現充分之散熱性。 從此一觀點，參考專利文獻2，則其所述之發光元件 搭載用基板，在LED晶片的封裝化之際，關於金屬柱狀體 之貫通構造、供電用之配線、絕緣層等尙有進一步改良之 空間。 用於LED晶片之封裝化的小型基板，已知有絕緣層係 由陶瓷構成者，但因製造時須經陶瓷煅燒等，在製造成本 方面難謂有利，不適於大量生產。 因而，本發明之目的在提供，用作發光元件之封裝化 -5- 201025670 的基板’其係可實現發光元件充分的散熱效果，能大量生 產、低成本化、小型化的發光元件封裝用基板之製造方法， 及提供使用以該製造方法製造的發光元件封裝用基板之發 光元件封裝。 用以解決課題之手段 上述目的可依如下之本發明達成》 本發明的發光元件封裝用基板之製造方法係， 具備形成於發光元件之裝配位置下方的金屬厚壁部之 Φ 發光元件封裝用基板的製造方法，其特徵爲包括 一邊將具有由含導熱性塡料之樹脂構成的熱導率 1.0 W/mK以上之絕緣黏著劑及金屬層構件之積層體，與具 . '> 有金屬厚壁部的金屬層構件之各構件連續送出，一邊一體 化積層之積層步驟。 依本發明的發光元件封裝用基板之製造方法，可將導 熱性良好之絕緣黏著劑及金屬層構件之積層體，與具有金 屬厚壁部之金屬層構件一體化積層。藉預先製造積層體， 〇 則易於製造發光元件封裝用基板，大量生產性優良，使低 成本化、封裝之小型化變爲可能。而例如將發光元件裝配 於與金屬厚壁部對向之金屬層表面側時，發光元件產生之 熱可藉由金屬厚壁部高效率傳導，該熱更由高熱導率之絕 緣層高效率傳導，可使用作封裝化之基板實現充分的散熱 效果。 本發明的合適實施形態之一較佳例係具有絕緣黏著劑 及金屬層構件之積層體，及/或具有金屬厚壁部之金屬層構 件先經構成爲卷狀。如此構成則與單枚生產比較，在連續 -6- 201025670 生產性或大量生產性，較優良率亦更高。 本發明的合適實施形態之一較佳例係積層金屬厚壁 部，使其含於積層體之絕緣層內。如此構成則金屬厚壁部 之頂部側埋入熱導率高之絕緣層（絕緣黏著劑已硬化之狀 態，下同）而使導熱面積擴大，故來自金屬厚壁部之熱可更 髙效率傳導至封裝全體。 本發明的合適實施形態之一例其特徵爲包括，去除積 層體以使金屬厚壁部露出之去除步驟。如此則可使金屬厚 φ 壁部之頂部側露出（金屬厚壁部貫通絕緣層之狀態），而直 接或介著接合墊等間接層裝配發光元件於此金屬厚壁部之 * 頂部側。如此則因發光元件係裝配於金屬厚壁部側，可高 » ·> 效率傳導發光元件所產生之熱。並可介著金屬厚壁部將熱 高效率傳導至絕緣層側。 本發明的合適實施形態之一較佳例係該積層步驟之後 更包括捲取步驟以捲成卷狀。如此，積層步驟後將積層體 (基板構件）捲取成卷狀，輸送至下個步驟變容易，例如圖 〇 案形成步驟、切斷步驟中積層體（基板構件）易於進行連續 送出。保存所需空間亦較小。 本發明之發光元件封裝係使用由上述製造方法製造之 發光元件封裝用基板而構成，可低成本地且小型地製造出 發光元件封裝。 【實施方式】 以下參照圖示說明本發明之實施形態。第1圖係本發 明之發光元件封裝用基板的一例之剖視圖，其呈示發光元 件經裝配、封裝化之狀態。 201025670 本發明之發光元件封裝用基板如第1圖，具備：絕緣 層1其係由含導熱性塡料lb、lc之樹脂la構成，發光元 件4之裝配位置下方具備設置有金屬厚壁部2之金屬層21 及，形成於絕緣層1之裝配側面的表面電極部3。 本實施形態中，發光元件4係直接裝配於金屬層21之 裝配面2a。金屬厚壁部2係自裝配面2a朝向絕緣層1之背 面側形成厚壁，其頂部側被包含在絕緣層1之內部（經埋入 之狀態）。如此，在構造係金屬厚壁部2之頂部側不貫通絕 φ 緣層1之情況下，因可藉後敘之壓製而製造，而可大量生 產、低成本化或小型化。 絕緣層1之熱導率係1.0W/mK以上，1.2W/mK以上爲 佳，1.5 W/mK以上更佳。如此，來自金屬厚壁部2之熱可 以良好的效率散熱至封裝全體。於此，絕緣層1之熱導率 係取決於考慮適當導熱性塡料之配合量（blending quality) 及粒度分布而選定之配方，若考量硬化前絕緣性黏著劑之 塗布性，則一般較佳者係以10W/mK左右爲上限。 〇 絕緣層1以係金屬氧化物及/或金屬氧化物的導熱性塡 料lb、lc與樹脂la構成爲佳。金屬氧化物以及金屬氮化 物係以導熱性優良，且具電絕緣性者爲佳。金屬氧化物可 選擇氧化鋁、氧化矽、氧化鈹、氧化鎂，而金屬氮化物可 選擇氮化硼、氮化矽、氮化鋁，可將這些單獨或混合2種 以上使用。尤其’該金屬氧化物之中氧化鋁因可容易地實 現電絕緣性、導熱性兼優之絕緣黏著劑層，且能低價取得 而較佳；該金屬氮化物之中，氮化硼因電絕緣性、導熱性 優良，且介電常數低而較佳。 -8- 201025670 導熱性塡料lb、lc係以含小粒徑塡料lb與大粒徑塡 料lc爲佳。如此使用2種以上大小不同的粒子（粒度分布 不同之粒子），由於大粒徑塡料lc本身之導熱功能與藉小 粒徑塡料lb提高大粒徑塡料lc間之樹脂的導熱性之功 能，可更提升絕緣層1之熱導率。基於如此觀點’小粒徑 塡料lb的中値粒徑係以0.5〜2μιη爲佳’ 0.5~l;/m更佳。 大粒徑塡料lc的中値粒徑以l〇~4〇vm爲佳，15~20#m更 佳。 φ 另外，如本實施形態，儘管有金屬厚壁部2之頂部側 不貫通絕緣層1之構造的情形，但金屬厚壁部2之頂部2b 與金屬圖案5a之間介有大粒徑塡料lc，壓製之際易與頂部 2b及金屬圖案5a接觸。結果，於金屬厚壁部2之頂部2b 與金屬圖案5a之間形成導熱路徑，更提升自金屬厚壁部2 往金屬圖案5a之散熱性。 構成絕緣層1之樹脂la含上述金屬氧化物及/或金屬 氮化物，並係在硬化狀態下，選用與表面電極部3及金屬 〇 圖案5a之接合力優良且無損於耐電壓特性等者。 如此之樹脂者，雖除了環氧樹脂、酚樹脂、聚醯亞胺 樹脂以外可單獨或混用2種以上的各種工程塑膠，其中環 氧樹脂因與各金屬之接合力優良而較佳。環氧樹脂之中尤 以流動性高且與上述金屬氧化物及金屬氮化物之混合性優 良的雙酚A型環氧樹脂、雙酚F型環氧樹脂、加氫雙酚A 型環氧樹脂、加氫雙酚F型環氧樹脂、兩末端有雙酚A型 環氧樹脂構造之三嵌段聚合物、兩末端有雙酚F型環氧樹 脂構造的三嵌段聚合物爲更佳。 -9- 201025670 本發明中，雖具有金屬厚壁部2之金屬層21、表 極部3及金屬圖案5a可使用各種金屬，但通常係使用 鋁、鎳、鐵、錫、銀、鈦中任一，或含這些金屬之合 基於導熱性、導電性則銅尤佳。 金屬厚壁部2係設於金屬層21。以金屬厚壁部2 度大於金屬層21之厚度爲佳。又，以從發光元件4之 充分傳導於絕緣層1之觀點，金屬層21之厚度（hi: 第3圖）及金屬厚壁部2之厚度（h2:參照第3圖）係以3: φ /zm爲佳，35~275/zm更佳。同理，金屬厚壁部2之被 於絕緣層1內部的部分之厚度以係絕緣層1之厚 30〜100%較佳，50~100%更佳。 丨， 從發光元件4之熱可充分傳導於絕緣層1之觀點 屬厚壁部2之平面形狀係經適當選擇，較佳者爲三角 四方形等多邊形，或五芒星、六芒星等星形多角形， 這些角部成適當圓弧者；亦可係自金屬厚壁部2之2a 表面電極部3逐漸變化之形狀。同理，俯視金屬厚壁 ❹ 時之最大寬度係以1〜l〇mm爲佳，1〜5mm更佳。 將金屬厚壁部2形成於金屬層21之方法可採習 法’例如，經光微影法之鈾刻、壓製、印刷、接著、 凸塊形成法。以蝕刻形成金屬厚壁部2時，亦可介有 金屬層。保護金屬層可用例如金、銀、鋅、鈀、釕、 铑、鉛-錫系銲料合金或鎳-金合金等。 表面電極部3之厚度係以例如25~70"m左右爲1 外’金屬圖案5a之厚度亦係以例如25 ~70# m左右爲 金屬圖案5a可係覆蓋於絕緣層1之背面全體者，並可 面電 銅、 金； 之厚 熱可 參照 〜275 包含 度的 *金 形、 並使 面往 部2 知方 習知 保護 鎳、 I。此 佳。 與金 -10- 201025670 屬層21相同具有金屬厚壁部2。爲避免表面電極部3短路， 較佳者爲至少係雨側之表面電極部3的背面之金屬圖案5a 不導通。尤其於金屬圖案5a亦有金屬厚壁部2時，下述積 層一體化步騾中，必須注意不發生位置偏移。金屬圖案5a 並係以在絕緣黏著劑之B階狀態下預先形成爲佳。 爲提高反射效率，以於金屬厚壁部2、金屬層21、表 面電極部3電鍍銀、金、鎳等貴金屬爲佳。亦可如同習知 之配線基板，形成焊阻或作部分焊劑電渡。 魯 (製造方法） 其次利用第3、4圖說明如上的本發明之發光元件封裝 用基板之合適製造方法。如第3、4圖所示，準備由形成有 金屬厚壁部2的長條狀金屬層21捲成之金屬層卷22»寬度 方向之尺寸、金屬厚壁部2之配置等係經適當設定。於金 屬層21形成金屬厚壁部2之方法如上所述。 又，準備長條狀之B階狀態絕緣層1與長條狀之金屬 層5的積層體所捲成之卷23。寬度方向之尺寸係經適當設 〇 定，但以與金屬層卷22之寬度方向尺寸相同爲佳。長條狀 之絕緣層1的表面亦可設有剝離保護層。如此，與金屬層 21積層時將剝離保護層剝離。 用以積層之輥如第3圖，係由輥對（3 0a、3 0b)構成。如 第4圖（a)，輥對（30a、30b)亦可由複數對構成。如第4圖（b)’ 輥對（3 0a、30b)亦可構成爲介著板狀體40(單側或兩側）按壓 金屬層21及積層體24-亦可係輥對與介有板狀體之輥對的 組合構造。輥之材質、大小等係依金屬層21與積層體24 經積層一體化的積層體25 (基板構件）之規格適當設定。板 -11- 201025670 狀體係例如平面性佳之硬質金屬板、硬質樹脂板。亦可使 用帶式壓製機。並亦可使用逐一送出金屬層21及積層體24 之間歇式壓製機。 輥對（3 0a、30b)係構成爲間距可予以調節。該間距係依 積層金屬層21及積層體24所構成的積層體25之厚度、金 屬厚壁部2之中被包含於絕緣層1內部之部分的厚度及積 層步驟運轉條件（輸送速度等）等而設定。輥對（30a、3 0b)之 按壓力係依金屬層21、構成積層體24之絕緣層1及金屬層 φ 5及積層該等而成之積層體25之各規格而設定。輥對（3 0a、 30b)之間距可在形成積層體25之際經固定，亦可構成爲能 相對於積層體25沿垂直方向移動。構成爲能於垂直方向移 動時，可採用習知手段，例如彈簧、油壓缸、彈性構件等。 以下說明第3圖所示之製造方法，而於第4圖所示之 製造方法亦進行同樣作用。首先，自金屬層卷22連續送出 長條狀之金屬層21，並送往輥對（30a、30b)側。與其同步， 自B階狀態之絕緣層1與金屬層5的積層體24之卷23連 〇 續送出長條狀之積層體24,送往輥對（30a、30b)側。其次， 於輥對（30a、30b)之間輸送，藉輥對（30a、30b)施加按壓作 用於金屬層21與積層體24,使金屬層21與積層體24積層 一體化，形成積層體25。第3圖中，金屬厚壁部2埋入積 層體24的絕緣層1內部之狀態下形成積層體25。 又，亦可有將輥本身加熱，並在該熱作用下進行壓製 (同時加熱壓製）之構成。絕緣層1經加熱時，可有效提升 與金屬層21之接合性。亦可構成爲輥對（30a、30b)之上游 側及/或下游側設置有加熱裝置，以良好效率進行絕緣層1 -12- 201025670 與金屬層21之接合。 並可塗布黏著劑於金屬層21及/或絕緣層1之積層面 側，以強化接合力。 爲保持厚度·穩定化，可於輥對（3〇a、30b)之下游側設 置複數之輥對（擠壓輥對）及/或平面板部對’藉此可使積層 體25之厚度高度精確。爲冷卻’亦可於輥對（30a、3 Ob)下 游側備有冷卻輥、冷卻裝置等。 藉輥之使用而積層金屬層21與積層體24之積層體25 φ 係經導入並通過適當條件下之加熱裝置內部，以將B階狀 態之絕緣層1硬化成C階狀態。其次使用切塊機、起槽機、 線切機、切割機等切斷裝置將其切成特定大小。而積層體 2 5之硬化亦可於切斷後進行，而亦可於切斷前之情形，則 切斷後可進一步作後硬化處理》此情形，可於切斷前設置 線上加熱裝置，亦可於捲成卷狀後以線外加熱裝置施行硬 化反應。 其次，於積層體25兩面藉光微影法之蝕刻等形成圖 〇 案，形成表面電極部3及金屬圖案5a，可得本發明之發光 元件封裝用基板。此時，金屬層21可構成爲部分經去除， 其餘形成表面電極部3。金屬層5可構成爲部分經去除， 其餘形成金屬圖案5a» 本發明之發光元件封裝用基板，如第1圖所示，可係 裝配單一發光元件之型式，或裝配複數發光元件之型式。 尤其係後者之情形，具有在表面電極部3間作配線的配線 圖案爲佳。 發光元件封裝用基板如第1圖，裝配發光元件4於發 -13- 201025670 光元件封裝用基板之金屬厚壁部2上方之金屬層21，並以 封裝樹脂7封裝發光元件4而使用。 易言之，發光元件封裝具有：發光元件封裝用基板， 其具備由包含導熱性塡料lb、lc之樹脂la構成之絕緣層 1、設有形成在發光元件4之裝配位置下方的金屬厚壁部2 之金屬層21及形成在絕緣層1之裝配側面的表面電極部 3;發光元件4，其係裝配於金屬厚壁部2上方；封裝樹脂 7，其封裝該發光元件4。 φ 所裝配之發光元件4可舉例係LED晶片、半導體雷射 晶片等。LED晶片有頂面存在有兩電極之面上型，以及具 背面電極之陰極型、陽極型、面下型（覆晶型）等。本發明 中，使用面上型者於散熱性方面較優。 搭載發光元件4於金屬層21之裝配面的方法可係，使 用導電膏、雙面膠帶、焊接、散熱片（較佳者爲矽酮系散熱 片）、矽酮系或環氧系樹脂材料等方法中任一之接合法；基 於散熱性以藉金屬接合爲較佳。 ® 發光元件4係與兩側之表面電極部3導電連接。此導 電連接可以將發光元件4之上部電極與各表面電極部3利 用金屬細線8以引線接合法等進行結線而實現。引線接合 法可倂用超音波或超音波與加熱。 本實施形態之發光元件封裝係以設有封裝樹脂7灌封 之際的堰部6爲例，而亦可如第2圖，予以省略堰部6。形 成堰部6之方法舉例有黏著環狀構件之方法及以點膠機立 體地環狀塗布紫外線硬化樹脂而使其硬化之方法等。 用於灌封之樹脂合適者有矽酮系樹脂、環氧系樹脂 -14- 201025670 等。封裝樹脂7之灌封，以賦予凸透鏡機能之觀點，較佳 者係將頂面形成爲凸狀，亦可將頂面形成爲平面狀或凹 狀。經封裝之封裝樹脂7的頂面形狀可藉所用材料之黏 度、塗布方法、與塗布表面之親和性等作控制。 本發明中，有時亦可於封裝樹脂7上方備有凸面之透 明樹脂透鏡。透明樹脂透鏡因具有凸面，可使之以良好效 率自基板往上方射光。具凸面之透鏡之平面形狀舉例有呈 圓形、橢圓形者等。而透明樹脂、透明樹脂透鏡可係經著 Φ 色者’或含螢光物質者。尤以含黃色系螢光物質時，使用 藍色發光二極體，可作白色發光。 [其它實施形態] (1) 前敘實施形態係以搭載面上型發光元件爲例，而 本發明亦可搭載底面有一對電極之面下型發光元件。此 時，藉由焊接等，有時可不需配線接合等。發光元件正反 面皆有電極時，配線接合等可僅施行1次。 (2) 另一製造方法具備以下步驟。積層有金屬層21與 6 積層體24的積層體25,去除絕緣層1及金屬層5使金屬厚 壁部2露出。去除裝置係能保持平面性同時並使金屬厚壁 部2露出者，有例如硏磨手段、曝光顯像、化學處理等。 亦可僅去除金屬層5及絕緣層1以使金屬厚壁部2頂部露 出，例如僅鑿通金屬層5及絕緣層1。其次，對於金屬厚 壁部2露出之一側，以光微影法作蝕刻等形成圖案，形成 表面電極部31。對於金屬層21側以光微影法作蝕刻等形成 圖案，可形成金屬圖案51。其次使用切塊機、起槽機、線 切機、切割機等切斷裝置將其切成特定大小，可得本發明 -15- 201025670 之發光元件封裝用基板。 以下說明，由以上方法製造之金屬厚壁部 裝用基板之使用例。如第5圖，於金屬層21形 案51，於金屬厚壁部2上部形成有裝配墊2e。 裝配墊2e裝配發光元件4。從導熱性之觀點， 2e與金屬厚壁部2則更佳。 亦可如第6圖，省略裝配墊2e，直接接合 於金屬厚壁部2頂部。 φ (3)前敘實施形態係以表面電極部31與絕 面不導通的構造爲例，而本發明較佳者係如第 備使表面電極部31與絕緣層1之背面導通之 10。層間導通部10可係通孔電鍍、導電膏、金 任一。其形成方法有例如雷射加工、蝕刻等。 本發明中，如第7圖之發光元件封裝用基 爲金屬凸塊之金屬板（金屬層21)形成層間導通i 厚壁部2，絕緣層1與金屬板經輥壓接著·一 ® 屬凸塊頂部露出形成圖案而簡易製作。使金屬 出之方法有硏磨、曝光顯像、化學處理等。 此例中，於封裝樹脂7頂面接合具凸面之 形成堰6;而透鏡9、堰6可予省略。亦可於金 設置裝配墊。 如第7圖，發光元件封裝係例如焊接於 CB。搭載用基板CB係用例如具有散熱用金屬 層Π與電路圖案13者。焊接係介著焊料15接 封裝之背面側電極（金屬圖案5a)與電路圖案1: 2露出的封 成有金屬圖 如此，介著 焊接裝配墊 •發光元件4 緣層1之背 7圖，更具 層間導f部 屬凸塊等之 板可先於作 部1 0與金屬 體化，使金 凸塊頂部露 .透鏡9，並 屬凸塊頂部 搭載用基板 板12、絕緣 合發光元件 $。金屬厚壁 -16- 201025670 部 之 層 法 用 時 % 布 程 21 態 狀 連 體 鲁 圖 視 2與電路圖案13亦係介著焊料15接合。 (4) 前敘實施形態係以搭載發光元件於電路層爲單層 電路板爲例，但本發明亦可搭載發光元件於電路層爲二 以上之多層電路板。此時，導電連接構造之詳細形成方 如國際公開公報WOOO/52977號所述，其任一皆可予採 〇 (5) 另一實施形態係，積層體24非形成爲卷狀者。此 ’ 一邊將卷狀之金屬層5連續退繞送出，於表面連續塗 絕緣黏著劑，構成積層體24。對於此積層體24藉上述製 連續積層金屬層21，得積層體25。此時亦可於與金屬層 積層前，使積層體24之絕緣黏著劑半硬化至呈B階狀 I) Ο (6) 另一實施形態係，構成金屬層21之基底金屬爲卷 ’將此卷狀基底金屬連續退繞送出，一邊使用上述製程 續形成金屬厚壁部2，得金屬層21。藉上述製程將積層 24連續積層於該金屬層21，得積層體25。 【圖式簡單說明】 第1圖本發明之發光元件封裝用基板的一例之剖視 〇 第2圖本發明之發光元件封裝用基板的另一例之剖 圖。 第3圖本發明之發光元件封裝用基板的製造方法之 例圖。 第4圖本發明之發光元件封裝用基板的製造方法之 例圖。 -17- 201025670 第5圖本發明之發光元件封裝用基板的另一例之剖 視圖。 第6圖本發明之發光元件封裝用基板的另一例之剖 視圖。 第7圖本發明之發光元件封裝的另一例之剖視圖。 【主要元件符號說明】[Technical Field] The present invention relates to a method for producing a substrate for a light-emitting element package used for packaging a light-emitting device such as an LED chip, and a method for packaging a light-emitting device manufactured by the method. A light-emitting element package of a substrate. [Prior Art] In recent years, attention has been paid to lightweight, thin, and power-saving lighting, light-emitting, and light-emitting diodes. The assembly form of the light-emitting diode is known as a method of directly mounting a bare wafer (LED wafer) of a light-emitting diode on a wiring substrate, and assembling the LED wafer to a small substrate in order to facilitate assembly of the light-emitting diode. And assembling the LED package on the wiring substrate.丨 习 LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED structure. On the other hand, in the temperature range in which the LED chip is used as a lighting fixture, the lower the temperature, the higher the luminous efficiency, and the higher the temperature, the higher the luminous efficiency. Therefore, the heat generated by the LED chip of the light source device using the light-emitting diode can be quickly radiated to the outside to lower the temperature of the LED chip, and the improvement of the luminous efficiency of the LED chip is a very important issue. By improving the heat dissipation characteristics, the LED chip can be used with a large current to increase the light output of the LED chip. Thus, instead of the conventional light-emitting diode, the heat dissipation characteristics of the LED chip are improved, and the heat-conductive substrate is used as an LED. There have been several proposals for direct die bonding light source devices for wafers. For example, in the following Patent Document 1, a substrate made of a thin aluminum plate is subjected to press processing to form a recess, and after an insulator film is formed on the surface thereof, -4-201025670 is bonded to the bottom surface of the recess via the insulator film as a die bonding of the LED chip. The wiring pattern formed on the insulator film layer and the electrode on the surface of the LED chip are electrically connected via a bonding wire, and the light-transmitting sealing resin is filled in the recess. However, this substrate has a problem of complicated structure and high processing cost. Patent Document 2 discloses a substrate for mounting a light-emitting element, and includes a metal substrate and a metal columnar body (metal convex portion) formed by etching the light-emitting element mounting position of the metal substrate, and is formed around the metal columnar body. An insulating layer and an electrode portion formed in the vicinity of the metal columnar body. [Patent Document 1] Japanese Patent Laid-Open Publication No. JP-A-2005-94 No. When the wafer is mounted on a circuit board, it is important to provide a metal column at the mounting position. However, when the LED package is mounted, it is not necessary to provide a metal columnar body on the wiring board. That is, it has been confirmed that when the LED package is mounted, a resin containing a highly thermally conductive inorganic tantalum is used as an insulating layer material on a substrate on which the Φ LED package is mounted, so that sufficient heat dissipation can be achieved. From this point of view, the substrate for mounting a light-emitting element according to the above-mentioned Patent Document 2 further improves the through structure of the metal columnar body, the wiring for power supply, and the insulating layer when the LED chip is packaged. Space. In a small-sized substrate for encapsulation of an LED chip, it is known that the insulating layer is made of ceramics. However, it is difficult to manufacture in terms of manufacturing cost because it is subjected to ceramic baking during production, and is not suitable for mass production. Therefore, the object of the present invention is to provide a substrate for a light-emitting element package which is used as a substrate for encapsulating a light-emitting element -5 - 201025670, which can realize a sufficient heat dissipation effect of a light-emitting element, and can be mass-produced, reduced in cost, and miniaturized. A manufacturing method, and a light emitting element package using the substrate for a light emitting element package manufactured by the manufacturing method. Means for Solving the Problem The above-described object can be achieved by the present invention. The method for producing a substrate for a light-emitting element package according to the present invention includes a substrate for a light-emitting element package of a thick metal portion formed under a mounting position of the light-emitting element. The manufacturing method is characterized in that it comprises a laminated body having an insulating adhesive having a thermal conductivity of 1.0 W/mK or more and a metal layer member composed of a resin containing a thermal conductive material, and a metal layer having a thickness of '> Each of the members of the metal layer member of the wall portion is continuously fed, and the step of laminating the layers is integrated. According to the method for producing a substrate for a light-emitting element package of the present invention, a laminate of an insulating adhesive having good heat conductivity and a metal layer member can be laminated with a metal layer member having a metal thick portion. By manufacturing a laminate in advance, it is easy to manufacture a substrate for a light-emitting element package, and it is excellent in mass productivity, and it is possible to reduce the cost and size of the package. For example, when the light-emitting element is mounted on the surface side of the metal layer opposite to the thick portion of the metal, the heat generated by the light-emitting element can be efficiently conducted by the thick-walled portion of the metal, and the heat is more efficiently conducted by the insulating layer having high thermal conductivity. It can be used as a packaged substrate to achieve sufficient heat dissipation. A preferred embodiment of a preferred embodiment of the present invention is a laminate having an insulating adhesive and a metal layer member, and/or a metal layer member having a thick metal portion is first formed into a roll shape. Compared with the single production, the composition is more productive or mass-produced in continuous -6-201025670, and the excellent rate is also higher. A preferred embodiment of a suitable embodiment of the present invention is a laminated metal thick portion which is contained in an insulating layer of a laminate. According to this configuration, the insulating layer of the high thermal conductivity is embedded in the top side of the thick portion of the metal (the insulating adhesive is cured, the same applies hereinafter), and the heat transfer area is enlarged, so that the heat from the thick portion of the metal can be more efficiently conducted. To the package. An example of a suitable embodiment of the present invention is characterized in that it includes a step of removing the laminated body to expose the thick portion of the metal. In this manner, the top side of the metal thickness φ wall portion can be exposed (the state in which the thick metal portion penetrates the insulating layer), and the light-emitting element can be directly mounted on the top side of the thick metal portion of the metal thick portion via an indirect layer such as a bonding pad. In this way, since the light-emitting element is mounted on the side of the thick metal portion of the metal, it is possible to efficiently conduct heat generated by the light-emitting element. The heat can be efficiently conducted to the side of the insulating layer through the thick metal portion. A preferred embodiment of a suitable embodiment of the present invention further comprises a take-up step to roll into a roll after the step of laminating. As described above, after the laminating step, the laminated body (substrate member) is wound into a roll shape, and the conveyance to the next step becomes easy. For example, in the pattern forming step and the cutting step, the laminated body (substrate member) is easily fed continuously. The space required for saving is also small. In the light-emitting element package of the present invention, the light-emitting element package substrate manufactured by the above-described manufacturing method is used, and the light-emitting element package can be manufactured at low cost and in a small size. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing an example of a substrate for a light-emitting element package of the present invention, showing a state in which a light-emitting element is assembled and packaged. 201025670 The substrate for a light-emitting element package of the present invention, as shown in Fig. 1, includes an insulating layer 1 made of a resin la containing thermal conductive materials lb and lc, and a metal thick portion 2 is provided below the mounting position of the light-emitting element 4. The metal layer 21 and the surface electrode portion 3 formed on the mounting side surface of the insulating layer 1 are formed. In the present embodiment, the light-emitting element 4 is directly mounted on the mounting surface 2a of the metal layer 21. The thick metal portion 2 is formed thick from the mounting surface 2a toward the back side of the insulating layer 1, and the top side thereof is contained inside the insulating layer 1 (in a state of being embedded). When the top side of the structural metal thick portion 2 does not penetrate the φ edge layer 1, it can be produced by pressing as described later, and can be mass-produced, reduced in cost, or miniaturized. The thermal conductivity of the insulating layer 1 is 1.0 W/mK or more, preferably 1.2 W/mK or more, and more preferably 1.5 W/mK or more. Thus, the heat from the thick portion 2 of the metal can be dissipated to the entire package with good efficiency. Here, the thermal conductivity of the insulating layer 1 is determined depending on the blending quality and the particle size distribution of the appropriate thermal conductivity, and it is generally preferred to consider the coating properties of the insulating adhesive before hardening. The upper limit is about 10 W/mK.绝缘 The insulating layer 1 is preferably composed of a thermal conductive material lb, lc which is a metal oxide and/or a metal oxide, and a resin la. The metal oxide and the metal nitride are preferably excellent in thermal conductivity and electrically insulating. The metal oxide may be selected from the group consisting of alumina, cerium oxide, cerium oxide, and magnesium oxide, and the metal nitride may be selected from the group consisting of boron nitride, tantalum nitride, and aluminum nitride. These may be used alone or in combination of two or more. In particular, among the metal oxides, alumina is preferably an insulating adhesive layer which can easily achieve electrical insulation and thermal conductivity, and is preferably obtained at a low price; among the metal nitrides, boron nitride is electrically It is excellent in insulation and thermal conductivity, and has a low dielectric constant and is preferable. -8- 201025670 The thermal conductivity materials lb and lc are preferably composed of a small particle size lb and a large particle size lc. In this way, two or more kinds of particles having different sizes (particles having different particle size distributions) are used, and the thermal conductivity of the resin having a large particle size lc itself and the thermal conductivity of the resin between the large particle size lc are increased by the small particle size lb. The function can further improve the thermal conductivity of the insulating layer 1. Based on such a viewpoint, the median diameter of the small particle size lb is preferably 0.5 to 2 μm, more preferably 0.5 to 1; The particle size of the large particle size lc is preferably l〇~4〇vm, and 15~20#m is better. In addition, in the present embodiment, although the top side of the metal thick portion 2 does not penetrate the structure of the insulating layer 1, the large particle size is interposed between the top portion 2b of the metal thick portion 2 and the metal pattern 5a. Lc, when pressed, is easily contacted with the top 2b and the metal pattern 5a. As a result, a heat conduction path is formed between the top portion 2b of the thick metal portion 2 and the metal pattern 5a, and the heat dissipation from the thick metal portion 2 to the metal pattern 5a is further enhanced. The resin la constituting the insulating layer 1 contains the above metal oxide and/or metal nitride, and is in a hardened state, and is excellent in bonding strength to the surface electrode portion 3 and the metal ruthenium pattern 5a, and does not impair the withstand voltage characteristics. In addition to the epoxy resin, the phenol resin, and the polyimide resin, two or more kinds of engineering plastics may be used alone or in combination, and the epoxy resin is preferred because it has excellent bonding strength with each metal. Among the epoxy resins, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a hydrogenated bisphenol A type epoxy resin having high fluidity and excellent compatibility with the above metal oxide and metal nitride are particularly preferable. Further, a hydrogenated bisphenol F type epoxy resin, a triblock polymer having a bisphenol A type epoxy resin structure at both ends, and a triblock polymer having a bisphenol F type epoxy resin structure at both ends are more preferable. -9- 201025670 In the present invention, although various metals can be used for the metal layer 21, the surface electrode portion 3, and the metal pattern 5a of the metal thick portion 2, aluminum, nickel, iron, tin, silver, and titanium are usually used. First, or in combination with these metals, copper is particularly preferred based on thermal conductivity and electrical conductivity. The metal thick portion 2 is provided on the metal layer 21. It is preferable that the thick portion of the metal is 2 degrees larger than the thickness of the metal layer 21. Further, from the viewpoint of sufficiently conducting the light-emitting element 4 to the insulating layer 1, the thickness of the metal layer 21 (hi: Fig. 3) and the thickness of the thick metal portion 2 (h2: see Fig. 3) are 3: φ /zm is better, 35~275/zm is better. Similarly, the thickness of the portion of the metal thick portion 2 which is inside the insulating layer 1 is preferably 30 to 100% thicker than the insulating layer 1, and more preferably 50 to 100%.丨, from the viewpoint that the heat of the light-emitting element 4 can be sufficiently conducted to the insulating layer 1, the planar shape of the thick-walled portion 2 is appropriately selected, preferably a polygon such as a triangular square, or a star-shaped star such as a pentagonal star or a six-pointed star. In the angular shape, the corner portions are formed into an appropriate circular arc; or the surface electrode portion 3 of the metal thick portion 2a may be gradually changed. For the same reason, the maximum width when the metal thick wall 俯视 is overlooked is preferably 1 to l 〇 mm, and more preferably 1 to 5 mm. The method of forming the metal thick portion 2 on the metal layer 21 is exemplified by lithography, pressing, printing, bonding, and bump forming by photolithography. When the metal thick portion 2 is formed by etching, a metal layer may be interposed. The protective metal layer may be, for example, gold, silver, zinc, palladium, rhodium, iridium, a lead-tin solder alloy or a nickel-gold alloy. The thickness of the surface electrode portion 3 is, for example, about 25 to 70 mm, and the thickness of the metal pattern 5a is, for example, about 25 to 70 mm, and the metal pattern 5a can be applied to the back surface of the insulating layer 1. It can be used to protect copper and gold. The thick heat can be referred to as ~275 inclusive gold, and the surface is protected by nickel. This is good. The metal thick portion 2 is the same as the gold -10-201025670 genus layer 21. In order to avoid short-circuiting of the surface electrode portion 3, it is preferable that at least the metal pattern 5a of the back surface of the surface electrode portion 3 on the rain side is not electrically connected. In particular, when the metal pattern 5a also has the metal thick portion 2, it is necessary to pay attention to the fact that the positional shift does not occur in the following integrated step. It is preferable that the metal pattern 5a is formed in advance in the B-stage state of the insulating adhesive. In order to improve the reflection efficiency, it is preferable to plate a precious metal such as silver, gold or nickel in the metal thick portion 2, the metal layer 21, and the surface electrode portion 3. It can also be used as a conventional wiring board to form a solder resist or as a partial flux. Lu (Manufacturing Method) Next, a suitable manufacturing method of the substrate for light-emitting element package of the present invention as described above will be described with reference to Figs. As shown in Figs. 3 and 4, the size of the metal layer roll 22 to be wound by the elongated metal layer 21 in which the metal thick portion 2 is formed, and the arrangement of the metal thick portion 2 are appropriately set. . The method of forming the metal thick portion 2 in the metal layer 21 is as described above. Further, a roll 23 in which a laminate of the B-stage state insulating layer 1 and the elongated metal layer 5 is wound is prepared. The dimension in the width direction is appropriately set, but it is preferably the same as the dimension in the width direction of the metal layer roll 22. The surface of the elongated insulating layer 1 may also be provided with a peeling protective layer. Thus, when the metal layer 21 is laminated, the peeling protective layer is peeled off. The roll for laminating is as shown in Fig. 3, which is composed of a pair of rolls (30a, 30b). As shown in Fig. 4(a), the pair of rolls (30a, 30b) may also be composed of a plurality of pairs. As shown in Fig. 4(b), the pair of rollers (30a, 30b) may be configured to press the metal layer 21 and the laminate body 24 via the plate-like body 40 (on one side or both sides). The combined construction of the roller pairs of the plate-like body. The material, the size, and the like of the roller are appropriately set depending on the specifications of the laminated body 25 (substrate member) in which the metal layer 21 and the laminated body 24 are integrated. Plate -11- 201025670 A system such as a hard metal plate or a hard resin plate. A belt press can also be used. It is also possible to use an intermittent press which feeds the metal layer 21 and the laminated body 24 one by one. The roller pairs (30a, 30b) are configured such that the pitch can be adjusted. The pitch is the thickness of the laminated body 25 composed of the laminated metal layer 21 and the laminated body 24, the thickness of the portion of the thick metal portion 2 included in the insulating layer 1, and the operating conditions (transport speed, etc.) of the lamination step. And set. The pressing force of the pair of rolls (30a, 30b) is set in accordance with the specifications of the metal layer 21, the insulating layer 1 and the metal layer φ 5 constituting the laminated body 24, and the laminated body 25 in which the layers are laminated. The distance between the pair of rollers (30a, 30b) may be fixed while forming the laminated body 25, or may be configured to be movable in the vertical direction with respect to the laminated body 25. When it is configured to be movable in the vertical direction, conventional means such as a spring, a hydraulic cylinder, an elastic member, or the like can be employed. The manufacturing method shown in Fig. 3 will be described below, and the manufacturing method shown in Fig. 4 also performs the same function. First, the elongated metal layer 21 is continuously fed from the metal layer roll 22 and sent to the roll pair (30a, 30b) side. In synchronization with this, the insulating layer 1 in the B-stage state and the roll 23 of the laminated body 24 of the metal layer 5 are continuously fed out of the long laminated body 24 and sent to the side of the pair of rolls (30a, 30b). Next, the roller pair (30a, 30b) is transported between the pair of rollers (30a, 30b) by pressing the metal layer 21 and the layered body 24, and the metal layer 21 and the layered body 24 are laminated to form a layered body 25. . In Fig. 3, the laminated body 25 is formed in a state in which the thick metal portion 2 is buried inside the insulating layer 1 of the laminated body 24. Further, it is also possible to heat the roller itself and perform pressing (simultaneous heating pressing) under the action of the heat. When the insulating layer 1 is heated, the adhesion to the metal layer 21 can be effectively improved. It is also possible to provide a heating means on the upstream side and/or the downstream side of the pair of rolls (30a, 30b) for bonding the insulating layer 1 -12 - 201025670 to the metal layer 21 with good efficiency. An adhesive may be applied to the side of the metal layer 21 and/or the insulating layer 1 to strengthen the bonding force. In order to maintain thickness and stabilization, a plurality of roller pairs (squeezing roller pairs) and/or flat plate portions may be disposed on the downstream side of the pair of rollers (3〇a, 30b), thereby making the thickness of the laminated body 25 high. accurate. For cooling, a cooling roll, a cooling device, and the like may be provided on the downstream side of the pair of rolls (30a, 3 Ob). The laminated body 25 φ of the laminated metal layer 21 and the laminated body 24 is introduced and passed through the inside of the heating device under appropriate conditions by the use of the roller to harden the insulating layer 1 of the B-stage state into the C-stage state. Next, it is cut into a specific size using a cutting device such as a dicer, a grooving machine, a wire cutter, or a cutter. The hardening of the laminated body 25 can also be carried out after the cutting, or in the case of cutting, the cutting can be further post-hardened. In this case, the in-line heating device can be provided before the cutting, or After being rolled into a roll, the hardening reaction is performed by an off-line heating device. Then, the surface of the laminated body 25 is formed by etching by photolithography or the like to form the surface electrode portion 3 and the metal pattern 5a, whereby the substrate for light-emitting element package of the present invention can be obtained. At this time, the metal layer 21 may be partially removed, and the remaining surface electrode portion 3 is formed. The metal layer 5 may be partially removed, and the remaining metal pattern 5a» The substrate for light-emitting element package of the present invention, as shown in Fig. 1, may be a type in which a single light-emitting element is mounted, or a pattern in which a plurality of light-emitting elements are mounted. In particular, in the latter case, it is preferable to have a wiring pattern for wiring between the surface electrode portions 3. As shown in Fig. 1, the light-emitting element package substrate is mounted on the metal layer 21 above the metal thick portion 2 of the substrate for optical element package of -13-201025670, and the light-emitting element 4 is packaged with the sealing resin 7. In other words, the light-emitting element package has a substrate for light-emitting element package, and includes an insulating layer 1 made of a resin la containing a thermal conductive material lb, lc, and a metal thick wall formed under the mounting position of the light-emitting element 4. The metal layer 21 of the portion 2 and the surface electrode portion 3 formed on the mounting side surface of the insulating layer 1; the light-emitting element 4 is mounted over the metal thick portion 2; and the encapsulating resin 7 encapsulating the light-emitting element 4. The light-emitting element 4 to which φ is mounted may be, for example, an LED chip, a semiconductor laser wafer or the like. The LED chip has a surface type in which two electrodes are provided on the top surface, and a cathode type, an anode type, and a subsurface type (clad type) having a back electrode. In the present invention, the surface type is superior in heat dissipation. The method of mounting the light-emitting element 4 on the mounting surface of the metal layer 21 may be a conductive paste, a double-sided tape, a solder, a heat sink (preferably an anthrone-based heat sink), an anthrone or an epoxy resin material. A bonding method according to any one of the methods; preferably by metal bonding based on heat dissipation. The light-emitting element 4 is electrically connected to the surface electrode portions 3 on both sides. This conductive connection can be realized by wire-bonding the upper electrode of the light-emitting element 4 and each of the surface electrode portions 3 by the metal thin wires 8 by wire bonding or the like. Wire bonding can use ultrasonic or ultrasonic waves and heating. The light-emitting element package of the present embodiment is exemplified by the crotch portion 6 in which the encapsulating resin 7 is potted, and the crotch portion 6 may be omitted as shown in Fig. 2 . The method of forming the crotch portion 6 is exemplified by a method of adhering the ring-shaped member and a method of hardening the ultraviolet curable resin by a ring-shaped applicator in a circular shape. Suitable resins for potting are fluorenone-based resins and epoxy resins -14-201025670. The potting of the encapsulating resin 7 is preferably formed into a convex shape from the viewpoint of imparting a function of the convex lens, or the top surface may be formed in a planar shape or a concave shape. The top surface shape of the encapsulated encapsulating resin 7 can be controlled by the viscosity of the material used, the coating method, the affinity with the coated surface, and the like. In the present invention, a transparent resin lens having a convex surface may be provided on the encapsulating resin 7. The transparent resin lens has a convex surface, so that it can be emitted upward from the substrate with good efficiency. The planar shape of the convex lens is exemplified by a circular shape, an elliptical shape, or the like. The transparent resin or transparent resin lens may pass through a Φ color or a fluorescent substance. Especially when a yellow-based fluorescent substance is used, a blue light-emitting diode can be used for white light emission. [Other Embodiments] (1) The foregoing embodiment is an example in which a surface-type light-emitting device is mounted, and the present invention can also be mounted on a face-down type light-emitting device having a pair of electrodes on its bottom surface. In this case, wiring or the like may be omitted by soldering or the like. When there are electrodes on both the front and the back of the light-emitting element, wiring bonding or the like can be performed only once. (2) Another manufacturing method has the following steps. The layered body 25 of the metal layer 21 and the 6 layered body 24 is laminated, and the insulating layer 1 and the metal layer 5 are removed to expose the metal thick portion 2. The removing device is capable of maintaining planarity while exposing the thick metal portion 2 to, for example, honing means, exposure development, chemical treatment, or the like. It is also possible to remove only the metal layer 5 and the insulating layer 1 to expose the top of the thick metal portion 2, for example, only the metal layer 5 and the insulating layer 1 are cut. Then, one side of the metal thick portion 2 is exposed, and a pattern is formed by etching or the like by photolithography to form the surface electrode portion 31. The metal pattern 51 can be formed by patterning the metal layer 21 side by photolithography or the like. Next, it is cut into a specific size by a cutting device such as a dicing machine, a grooving machine, a wire cutter, a cutter, etc., and a substrate for a light-emitting element package of the present invention -15-201025670 can be obtained. The use example of the metal thick-walled substrate produced by the above method will be described below. As shown in Fig. 5, in the metal layer 21 pattern 51, a mounting pad 2e is formed on the upper portion of the thick metal portion 2. The mounting pad 2e is equipped with a light-emitting element 4. From the viewpoint of thermal conductivity, 2e and the metal thick portion 2 are more preferable. Alternatively, as shown in Fig. 6, the mounting pad 2e is omitted and directly joined to the top of the thick metal portion 2. The φ (3) pre-existing embodiment is exemplified by a structure in which the surface electrode portion 31 and the surface of the insulating layer 1 are electrically connected. The preferred embodiment of the present invention is such that the surface electrode portion 31 and the back surface of the insulating layer 1 are electrically connected to each other. The interlayer conduction portion 10 may be either a via plating, a conductive paste, or gold. The formation method thereof is, for example, laser processing, etching, or the like. In the present invention, the metal plate (metal layer 21) of the metal bump according to the light-emitting element package of FIG. 7 is formed to form the interlayer conduction i thick portion 2, and the insulating layer 1 and the metal plate are rolled and then laminated. The top of the block is exposed and patterned to be easily produced. The method of making metal is honing, exposure imaging, chemical treatment, and the like. In this example, the top surface of the encapsulating resin 7 is bonded to the convex surface to form the crucible 6; and the lenses 9 and 6 are omitted. It is also possible to set the assembly mat in gold. As shown in Fig. 7, the light emitting element package is soldered, for example, to CB. For the mounting substrate CB, for example, a metal layer for heat dissipation and a circuit pattern 13 are used. The solder is connected to the back side electrode (metal pattern 5a) of the solder 15 and the circuit pattern 1: 2 is exposed to the metal pattern, and the solder mounting pad is mounted on the back surface of the edge layer 1 of the light emitting element 4 The plate having the interlayer-guided f-part bumps or the like can be formed by the metal portion of the portion 10 and the metal bump, and the lens bump 9 is exposed on the top of the gold bump, and is a bump-mounting substrate board 12 and an insulating light-emitting device $. The metal thick wall -16- 201025670 layer method time % process 21 state connection body diagram 2 and the circuit pattern 13 are also connected by the solder 15 . (4) The foregoing embodiment is an example in which a light-emitting element is mounted on a circuit board as a single-layer circuit board. However, the present invention can also be mounted on a multilayer circuit board in which a light-emitting element is two or more circuit layers. In this case, the conductive connection structure is formed in a detailed manner as described in International Publication No. WOOO/52977, and any one of them can be used. (5) In another embodiment, the laminated body 24 is not formed into a roll. On the other hand, the rolled metal layer 5 is continuously unwound and sent out, and an insulating adhesive is continuously coated on the surface to form a laminated body 24. The laminated body 25 is obtained by continuously laminating the metal layer 21 from the above-mentioned laminated body 24. In this case, the insulating adhesive of the laminated body 24 may be semi-hardened to a B-order before the lamination of the metal layer. I) (6) In another embodiment, the base metal constituting the metal layer 21 is a roll. The rolled base metal is continuously unwound and fed, and the metal thick portion 2 is continuously formed by the above-described process to obtain the metal layer 21. The buildup layer 24 is continuously laminated on the metal layer 21 by the above process to obtain the laminate body 25. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of a substrate for a light-emitting element package of the present invention. FIG. 2 is a cross-sectional view showing another example of a substrate for light-emitting element package of the present invention. Fig. 3 is a view showing an example of a method of producing a substrate for light-emitting element package of the present invention. Fig. 4 is a view showing an example of a method of producing a substrate for light-emitting element package of the present invention. -17- 201025670 Fig. 5 is a cross-sectional view showing another example of the substrate for light-emitting element package of the present invention. Fig. 6 is a cross-sectional view showing another example of the substrate for light-emitting element package of the present invention. Fig. 7 is a cross-sectional view showing another example of the light-emitting element package of the present invention. [Main component symbol description]
1 絕 緣 層 2 金 屬 厚 壁 部 3 表 面 電 極 部 4 發 光 元 件 5 金 屬 層 5 a 金 屬 圖 案 7 封 裝 樹 脂 10 層 間 導 通 部 21 金 屬 層 24 積 層 體 25 積 層 體 30a 、 30b 輥 3 1 表 面 電 極 部 40 板 狀 體 5 1 金 屬 圖 案 -18-1 Insulating layer 2 Metal thick portion 3 Surface electrode portion 4 Light-emitting element 5 Metal layer 5 a Metal pattern 7 Packaging resin 10 Interlayer conductive portion 21 Metal layer 24 Laminated body 25 Laminated body 30a, 30b Roller 3 1 Surface electrode portion 40 Plate shape Body 5 1 metal pattern -18-