TWI506830B - Heat dissipation substrate with insulating heat sink and its manufacturing method - Google Patents
Heat dissipation substrate with insulating heat sink and its manufacturing method Download PDFInfo
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本發明係有關一種具絕緣散熱層之散熱基板及其製造方法,尤指一種利用電漿熔射方法以對陶瓷材進行液化再高壓霧狀噴塗在一承載基板之表面上以包覆形成一由該陶瓷材之材質所構成之絕緣散熱層。The invention relates to a heat dissipating substrate with an insulating heat dissipating layer and a manufacturing method thereof, in particular to a method for preparing a ceramic substrate by liquefying and then high-pressure spray coating on a surface of a carrier substrate by a plasma spraying method. An insulating heat dissipation layer composed of the material of the ceramic material.
本發明之具絕緣散熱層之散熱基板乃適用於發光二極體(LED)封裝但不限制,因此以下以LED封裝為例說明。一般而言,一LED晶粒可隨製程需要而選擇以覆晶方式(Flip Chip)或導線方式(Wire bond)但不限制,以電性連結在一散熱基板上以完成一LED封裝(LED package),該LED封裝再連結固設在一發光裝置之散熱器(heat sink)之表面上,以組成一LED發光裝置;通常而言,習知之散熱基板係由一線路層(銅層)、一絕緣層及一基板(如鋁基板或陶瓷基板)依序壓合形成,其中該線路層係配合LED晶粒之佈局而設具有適當之圖案(pattern)用以安排並提供該些LED晶粒發光所須之正負極電源。當LED晶粒在發光時會產生熱能,該熱能一般是藉由該散熱載板及所連結之發光裝置之散熱器(heat sink)以向外散熱,藉以避免熱能存積過多以致影響該LED封裝或LED發光裝置之使用效率及壽命。The heat dissipation substrate with the insulating heat dissipation layer of the present invention is suitable for a light emitting diode (LED) package, but is not limited. Therefore, the LED package will be exemplified below. Generally, an LED die can be selected in a flip chip or a wire bond according to the process requirements, but is not limited, and is electrically connected to a heat dissipation substrate to complete an LED package (LED package). The LED package is further connected to a surface of a heat sink of a light-emitting device to form an LED light-emitting device; generally, the conventional heat-dissipating substrate is composed of a circuit layer (copper layer), The insulating layer and a substrate (such as an aluminum substrate or a ceramic substrate) are sequentially formed by pressing, wherein the circuit layer is provided with a suitable pattern in accordance with the layout of the LED die to arrange and provide the LED crystal grains. The positive and negative power supplies are required. When the LED die emits light, heat is generated, and the heat is generally radiated outward by the heat sink and the heat sink of the connected light-emitting device, so as to avoid excessive heat energy accumulation and affect the LED package. Or the efficiency and longevity of the LED lighting device.
以習知之散熱基板而言,習知之散熱基板是由一線路層(銅層)、一絕緣層及一鋁基板依序壓合形成,因此產生之熱能是透過線路層(銅層)及絕緣層之後才傳導至基板;然,習知散熱基板所使用之絕緣層大部分是以導熱膠片構成,該導熱膠片之導熱係數較差,且厚度較厚,致相對降低習知散熱基板之使用效率,無法滿足目前使用上之需求。因此在LED封裝或所使用之散熱基板或LED發光裝置等相關領域中,長久以來一直存在如何在線路層不會發生短路之狀況下使散熱基板達到良好散熱功效的問題。In the conventional heat-dissipating substrate, the conventional heat-dissipating substrate is formed by sequentially pressing a circuit layer (copper layer), an insulating layer and an aluminum substrate, so that the generated thermal energy is transmitted through the circuit layer (copper layer) and the insulating layer. After that, it is conducted to the substrate; however, the insulating layer used in the conventional heat-dissipating substrate is mostly composed of a heat-conductive film, and the thermal conductive film has a poor thermal conductivity and a thick thickness, so that the use efficiency of the conventional heat-dissipating substrate can be relatively reduced. Meet the needs of current use. Therefore, in the related fields such as the LED package or the heat dissipation substrate or the LED light-emitting device used, there has been a long-standing problem of how to achieve a good heat dissipation effect of the heat dissipation substrate without causing a short circuit in the circuit layer.
再以習知之覆晶式(Flip Chip)或導線式(Wire bond)LED封裝為例說明,其中每一LED晶粒係利用二不同之電極接點以電性連結在一線路層上之二分開且電性絕緣之連接點上;該線路層係預設在一鋁基板上;該線路層與該鋁基板之表面之間通常設有一絕緣連結層以使該線路層能絕緣地連結固設在該鋁基板之表面上且不易剝離;完成後之LED封裝再藉各種連結方式如焊接或緊密貼合但不限制以固設在一LED發光裝置之散熱器(heat sink)之表面上;然,在上述傳統的LED封裝中,該絕緣連結層一般係利用散熱貼片或散熱膏構成,其導熱係數較低(約4 W/m-k),且厚度較厚(約60微米),以致熱傳導功能不佳,無法將該LED晶粒在發光時所產生之熱能有效地傳導至該鋁基板以向外散熱。Taking a conventional Flip Chip or Wire Bond LED package as an example, each LED die is electrically connected to a circuit layer by two different electrode contacts. And electrically connected to the connection point; the circuit layer is preset on an aluminum substrate; an insulating bonding layer is usually disposed between the circuit layer and the surface of the aluminum substrate to enable the circuit layer to be insulated and fixed The surface of the aluminum substrate is not easily peeled off; after completion, the LED package is attached to the surface of a heat sink of an LED light-emitting device by various bonding methods such as soldering or close fitting; however, In the above conventional LED package, the insulating connecting layer is generally formed by using a heat dissipating patch or a heat dissipating paste, and has a low thermal conductivity (about 4 W/mk) and a thick thickness (about 60 μm), so that the heat conduction function is not Preferably, the thermal energy generated by the LED dies during illumination cannot be efficiently conducted to the aluminum substrate for heat dissipation.
在LED封裝及其所使用之散熱基板之相關領域中,目前已有多種先前技術,如TW573330、TW M350824,CN201010231866.5、US6,914,268、US8,049,230、US7,985,979、US7,939,832、US7,713,353、US7,642,121、US7,462,861、US7,393,411、US7,335,519、US7,294,866、US7,087,526、US5,557,115、US6,514,782、US6,497,944、US6,791,119;US2002/0163302、US2004/0113156等;然, 上述先前技術並未提出有效的解決方案,以克服散熱基板不會發生短路且能達到良好散熱功效的問題。In the related art of LED packages and the heat-dissipating substrates used therefor, there are various prior art, such as TW573330, TW M350824, CN201010231866.5, US 6,914,268, US 8,049,230, US 7,985,979, US 7,939,832, US 7, 713, 353, US 7,642, 121, US 7,462,861, US 7,393,411, US 7,335,519, US 7,294,866, US 7,087,526, US 5,557,115, US 6,514, 782, US 6,497,944, US 6,791, 119, US 2002/0163302, US 2004/0113156, etc. ; The above prior art does not propose an effective solution to overcome the problem that the heat dissipation substrate does not short-circuit and can achieve good heat dissipation efficiency.
此外,習知技術中已揭示一種利用微弧電漿方法(或大氣電漿氮化方法、真空電漿氮化方法)以在鋁基板之表面生成一具絕緣功能之氧化鋁(Al2 O3 )陶瓷層的技術,但該習知技術應用於發光二極體(LED)封裝用之散熱基板時,至少會產生下列缺點:一是所生成之陶瓷層的材質與所使用之基板材質之間存有一定之對應關係,如當該基板為鋁基板時,所生成之陶瓷層即受限為氧化鋁(Al2 O3 )之陶瓷層,相對使基板及陶瓷層之選擇受到限制;另一是所生成之陶瓷層係藉微弧電漿方法而深入基板(如鋁基板)之表面以與基板之材質(如鋁)產生氧化或氮化作用以緻密地形成一由氧化物(如氧化鋁Al2 O3 )或氮化物(如氮化鋁AlN)構成之陶瓷層,由於該氧化物或氮化物係在微弧電漿與基板之間形成一緻密之陶瓷膜層,形成之後即如同一障壁(barrier),會阻礙及影響後續之氧化或氮化作用,致使所生成之陶瓷層之厚度相對較薄,無法隨散熱基板之絕緣耐壓要求而加厚。因此,習知利用微弧電漿方法以在鋁基板之表面生成陶瓷層的技術仍然存在上述之困擾,無法滿足實際使用之需要。In addition, a micro-arc plasma method (or atmospheric plasma nitridation method, vacuum plasma nitridation method) has been disclosed in the prior art to form an insulating aluminum oxide (Al 2 O 3 ) on the surface of an aluminum substrate. Ceramic layer technology, but when the conventional technology is applied to a heat sink substrate for a light emitting diode (LED) package, at least the following disadvantages are caused: first, between the material of the generated ceramic layer and the substrate material used; There is a certain correspondence. For example, when the substrate is an aluminum substrate, the ceramic layer formed is limited to a ceramic layer of aluminum oxide (Al 2 O 3 ), which limits the selection of the substrate and the ceramic layer; The ceramic layer is formed by a micro-arc plasma method to penetrate the surface of a substrate (such as an aluminum substrate) to generate oxidation or nitridation with a material of the substrate (such as aluminum) to densely form an oxide (such as alumina). a ceramic layer composed of Al 2 O 3 ) or a nitride (such as aluminum nitride AlN), since the oxide or nitride system forms a uniform ceramic film layer between the microarc plasma and the substrate, and is formed as the same Barriers that hinder and affect subsequent oxidation or nitrogen The resulting ceramic layer is relatively thin and cannot be thickened with the insulation withstand voltage requirements of the heat sink substrate. Therefore, the conventional technique of using the micro-arc plasma method to form a ceramic layer on the surface of an aluminum substrate still has the above-mentioned problems and cannot meet the needs of practical use.
由上可知,上述先前技術之結構尚難以符合實際使用之要求,因此在LED封裝或散熱基板之相關領域中,仍存在進一步改進之需要性。本發明乃是在此技術發展空間有限之領域中,提出一種具絕緣散熱層之散熱基板及其製造方法,藉以使LED封裝及/或發光裝置能達成良好之絕緣兼散熱之功效。It can be seen from the above that the structure of the above prior art is still difficult to meet the requirements of practical use, and therefore there is still a need for further improvement in the related field of LED packaging or heat dissipation substrate. The invention provides a heat dissipation substrate with an insulating heat dissipation layer and a manufacturing method thereof in the field of limited development of the technology, so that the LED package and/or the light-emitting device can achieve good insulation and heat dissipation effects.
本發明主要目的係在於提供一種具絕緣散熱層之散熱 基板及其製造方法,適用於發光二極體(LED)封裝,其係利用一具散熱作用之基板作為承載基板,該基板係選自鋁基板、鎂基板、鋁鎂合金基板、鈦合金基板、銅基板、具導熱孔之印刷電路板(PCB)式複合基板之族群中一種基板;再利用陶瓷材之電漿熔射方法,如選自大氣電漿方法、真空電漿方法、低壓電漿方法之族群中一種方法,以對選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種陶瓷材進行液化;再以高壓霧狀噴塗方法並依據預定之噴塗時間,使在該承載基板之至少一預定之表面上噴塗並包覆形成一由該陶瓷材之材質所構成之絕緣散熱層,藉以形成一具絕緣散熱層之散熱基板,供應用於LED封裝;其中當LED晶粒發光並產生熱能時,藉由該絕緣散熱層以將該熱能傳導至該承載基板以向外散熱,藉以達成良好之電性絕緣耐壓及散熱功效。The main object of the present invention is to provide a heat dissipation layer with an insulating heat dissipation layer. The substrate and the manufacturing method thereof are suitable for a light-emitting diode (LED) package, which uses a heat-dissipating substrate as a carrier substrate, and the substrate is selected from an aluminum substrate, a magnesium substrate, an aluminum-magnesium alloy substrate, a titanium alloy substrate, a substrate of a copper substrate, a printed circuit board (PCB) type composite substrate having a heat conductive hole; a plasma spraying method using a ceramic material, such as a method selected from the group consisting of atmospheric plasma, vacuum plasma, and low pressure plasma a method of liquefying a ceramic material selected from the group consisting of alumina, magnesia, titania, aluminum nitride, magnesium nitride, titanium nitride, and a high pressure spray coating method according to a predetermined method Spraying time, spraying and coating on at least one predetermined surface of the carrier substrate to form an insulating heat dissipation layer composed of the material of the ceramic material, thereby forming a heat dissipation substrate with an insulating heat dissipation layer, and supplying the LED a package; wherein when the LED die emits light and generates thermal energy, the insulating heat dissipation layer conducts the thermal energy to the carrier substrate to dissipate heat outward, thereby achieving good electrical insulation withstand voltage and heat dissipation work. effect.
為達成上述目的,本發明「具絕緣散熱層之散熱基板」之一優選實施例包含一承載基板及至少一絕緣散熱層,其中該承載基板係一具散熱作用之基板用以承載該絕緣散熱層;其中該絕緣散熱層係形成在該承載基板之至少一表面上,其係利用電漿熔射方法將選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種陶瓷材先行液化,再高壓霧狀噴塗在該承載基板之該至少一表面上,以在該至少一表面上包覆形成一由該陶瓷材之材質所構成之絕緣散熱層。In order to achieve the above object, a preferred embodiment of the present invention includes a carrier substrate and at least one insulating heat dissipation layer, wherein the carrier substrate is a substrate for dissipating heat to carry the insulating heat dissipation layer. Wherein the insulating heat dissipation layer is formed on at least one surface of the carrier substrate, which is selected from the group consisting of alumina, magnesia, titania, aluminum nitride, magnesium nitride, and titanium nitride by a plasma spraying method. A ceramic material in the group is first liquefied and then sprayed on the at least one surface of the carrier substrate in a high pressure spray to cover the at least one surface to form an insulating heat dissipation layer composed of the material of the ceramic material.
所述之散熱基板,其中該電漿熔射方法係利用選自大氣電漿方法、真空電漿方法、低壓電漿方法之族群中一種方法以將該陶瓷材液化。The heat dissipating substrate, wherein the plasma spraying method liquefies the ceramic material by a method selected from the group consisting of an atmospheric plasma method, a vacuum plasma method, and a low pressure plasma method.
所述之散熱基板,其中該承載基板係一具散熱作用之金屬基板,該金屬基板係選自鋁基板、鎂基板、鋁鎂合金基板、鈦合金基板、銅基板之族群中一種基板所構成。The heat dissipation substrate, wherein the carrier substrate is a metal substrate having a heat dissipation function, and the metal substrate is selected from the group consisting of an aluminum substrate, a magnesium substrate, an aluminum-magnesium alloy substrate, a titanium alloy substrate, and a copper substrate.
所述之散熱基板,其中該承載基板係一具有導熱孔之印刷電路板(PCB)式複合基板。The heat dissipation substrate, wherein the carrier substrate is a printed circuit board (PCB) type composite substrate having a heat conductive hole.
所述之散熱基板,其中該陶瓷材包含線材或粉末。The heat dissipation substrate, wherein the ceramic material comprises a wire or a powder.
所述之散熱基板,其中該絕緣散熱層之形成厚度係依據該絕緣層所欲達成電性絕緣耐壓之程度而預先設定。In the heat dissipation substrate, the thickness of the insulating heat dissipation layer is set in advance according to the degree of electrical insulation withstand voltage desired by the insulation layer.
所述之散熱基板,其中該絕緣散熱層之形成厚度係依據該高壓霧狀噴塗在該承載基板之表面上的噴塗時間而預先設定。In the heat dissipation substrate, the thickness of the insulating heat dissipation layer is preset according to the spraying time of the high pressure spray coating on the surface of the carrier substrate.
所述之散熱基板,其中該絕緣散熱層之厚度係設定為1~50微米(μm),以使電性絕緣耐壓之程度達到300伏特(V)或以上。In the heat dissipation substrate, the thickness of the insulating heat dissipation layer is set to be 1 to 50 micrometers (μm) so that the electrical insulation withstand voltage reaches 300 volts (V) or more.
所述之散熱基板,其中該絕緣散熱層之外表面進一步設置一線路層,該線路層係利用選自印刷線路板(PCB)線路製程、網版印刷製程、半導體製程之族群中一種製程以形成在該絕緣散熱層之表面上;該線路層包含至少二分開且絕緣之電性連結點供與至少一LED晶粒所設之不同電極之銲墊對應電性連結,以使該至少一LED晶粒能電性連結並設置在該散熱基板上,其中當該至少一LED晶粒發光並產生熱能時,藉由該絕緣散熱層以將該熱能傳導至該承載基板以向外散熱。The heat dissipation substrate, wherein the outer surface of the insulating heat dissipation layer is further provided with a circuit layer formed by a process selected from the group consisting of a printed circuit board (PCB) circuit process, a screen printing process, and a semiconductor process. On the surface of the insulating heat dissipation layer; the circuit layer includes at least two separate and insulated electrical connection points for electrically connecting with the pads of different electrodes provided by the at least one LED die, so that the at least one LED crystal The particles are electrically connected and disposed on the heat dissipation substrate, wherein when the at least one LED die emits light and generates thermal energy, the insulating heat dissipation layer conducts the thermal energy to the carrier substrate to dissipate heat outward.
為達成上述目的,本發明「具絕緣散熱層之散熱基板之製造方法」之一優選實施例包含下列步驟:提供一承載基板,該承載基板係一具散熱作用之基板;提供一陶瓷材,該陶瓷材係選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種;提供一電漿熔射設備,用以液化上述之陶瓷材;利用高壓霧狀噴塗方式將上述液化後之陶瓷材且依預 定時間噴塗在該承載基板之一預定表面上,以在該表面上包覆形成一由該陶瓷材之材質構成且具有預定厚度之絕緣散熱層;使該絕緣散熱層硬化,以完成一具有預定厚度之絕緣散熱層之散熱基板。In order to achieve the above object, a preferred embodiment of the "method for manufacturing a heat dissipating substrate having an insulating heat dissipating layer" comprises the following steps: providing a carrier substrate, the carrier substrate being a heat dissipating substrate; and providing a ceramic material, The ceramic material is selected from the group consisting of alumina, magnesia, titania, aluminum nitride, magnesium nitride, titanium nitride; providing a plasma spraying device for liquefying the above ceramic material; using a high pressure spray Spraying the above-mentioned liquefied ceramic material and pre-predetermined Spraying on a predetermined surface of the carrier substrate to form an insulating heat dissipation layer formed of the material of the ceramic material and having a predetermined thickness on the surface; hardening the insulating heat dissipation layer to complete a predetermined A heat dissipation substrate having a thickness of an insulating heat dissipation layer.
為使本發明更加明確詳實,將本發明之結構及技術特徵,配合下列圖示詳述如後:In order to make the present invention more clear and detailed, the structure and technical features of the present invention are detailed as follows:
參考圖1-5所示,其分別係本發明之具絕緣散熱層之散熱基板之兩個實施例(一為金屬基板,另一為印刷電路板式複合基板)之結構剖面示意圖、及其應用於LED封裝及一散熱器(heat sink)表面之三個實施例之結構剖面示意圖。本發明之散熱基板10包含一承載基板11及一絕緣散熱層12;其中該承載基板11係一具散熱作用之基板,用以承載該絕緣散熱層12;其中該絕緣散熱層12係形成在該承載基板11之至少一表面111上,其係利用電漿熔射設備20如圖6B所示以施行電漿熔射方法,用以將選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種陶瓷材30先行液化,再高壓霧狀噴塗在該承載基板11之該至少一表面上如圖6B所示,以在該至少一表面111上包覆形成一由該陶瓷材30之材質所構成之絕緣散熱層12。Referring to FIG. 1-5, which are respectively a schematic cross-sectional view of two embodiments of a heat dissipation substrate having an insulating heat dissipation layer of the present invention (one is a metal substrate, and the other is a printed circuit board type composite substrate), and the application thereof is applied. A schematic cross-sectional view of three embodiments of an LED package and a heat sink surface. The heat dissipation substrate 12 of the present invention comprises a carrier substrate 11 and an insulating heat dissipation layer 12; wherein the carrier substrate 11 is a heat dissipation substrate for carrying the insulating heat dissipation layer 12; wherein the insulating heat dissipation layer 12 is formed thereon. The at least one surface 111 of the carrier substrate 11 is formed by using a plasma spraying device 20 as shown in FIG. 6B to perform a plasma spraying method for selecting an aluminum oxide, magnesium oxide, titanium oxide, aluminum nitride, A ceramic material 30 of the group of magnesium nitride and titanium nitride is first liquefied, and then sprayed on the at least one surface of the carrier substrate 11 as shown in FIG. 6B to be coated on the at least one surface 111. An insulating heat dissipation layer 12 composed of a material of the ceramic material 30.
所述之散熱基板10,其中該電漿熔射方法係利用選自大氣電漿方法、真空電漿方法、低壓電漿方法之族群中一種方法,並利用相配合之電漿熔射設備20如圖6B所示,以將該陶瓷材30液化。The heat dissipating substrate 10, wherein the plasma spraying method utilizes a method selected from the group consisting of an atmospheric plasma method, a vacuum plasma method, and a low-pressure plasma method, and utilizes a matching plasma spraying device 20 This ceramic material 30 is liquefied as shown in FIG. 6B.
如圖1所示散熱基板10之一實施例,其中該承載基板11係一具散熱作用之金屬基板如圖1所示,該金屬基板係 選自鋁基板、鎂基板、鋁鎂合金基板、鈦合金基板、銅基板之族群中一種基板所構成。An embodiment of the heat dissipation substrate 10 shown in FIG. 1 , wherein the carrier substrate 11 is a metal substrate having a heat dissipation function, as shown in FIG. 1 , the metal substrate system It is composed of one substrate selected from the group consisting of an aluminum substrate, a magnesium substrate, an aluminum-magnesium alloy substrate, a titanium alloy substrate, and a copper substrate.
如圖2所示散熱基板10之另一實施例,其中該承載基板11係一具有導熱孔之印刷電路板(PCB)式複合基板,該承載基板11包含:一絕緣基板112、二線路層113、114及至少一導熱孔115。其中該絕緣基板112具有上、下二表面;其中該二線路層113、114係分別形成並設置在該絕緣基板112之二表面上,且其中一表面上之線路層113係供至少一LED晶粒40電性連接且固設在該散熱基板10上以形成一LED封裝如圖5所示;其中該至少一導熱孔115係穿設在該絕緣基板112之二表面之間,該些導熱孔115內設具導熱材料116。上述該LED封裝進一步可與一散熱器(heat sink)70結合應用如圖5所示;其中當該LED晶粒40發光並產生熱能時,藉由該絕緣散熱層12以將該熱能由該絕緣基板112之一表面之線路層113傳導至另一表面之線路層114以向外散熱,也就是傳導至該承載基板11(散熱基板10)及該散熱器(heat sink)70以向外散熱,藉以達成良好之散熱功效,並避免造成短路之困擾。在圖5中係以一LED晶粒40為例說明但非用以限制本發明。此外,該導熱孔115如圖5所示之設置數目及位置並不限制,但設置位置以能對應連接至接近該線路層113與LED晶粒40電性連結之間的主要之熱能產生處為最佳,當該些導熱孔115設置在接近熱能產生處時,相對可增進散熱作用。As shown in FIG. 2, the carrier substrate 11 is a printed circuit board (PCB) composite substrate having a heat conducting hole. The carrier substrate 11 includes an insulating substrate 112 and two circuit layers 113. And 114 and at least one heat conducting hole 115. The insulating substrate 112 has upper and lower surfaces. The two circuit layers 113 and 114 are respectively formed on the two surfaces of the insulating substrate 112, and the circuit layer 113 on one surface is provided with at least one LED crystal. The slabs 40 are electrically connected to the heat dissipating substrate 10 to form an LED package as shown in FIG. 5 . The at least one heat conducting hole 115 is disposed between the two surfaces of the insulating substrate 112 . A heat conductive material 116 is disposed in the 115. The LED package may further be combined with a heat sink 70 as shown in FIG. 5; wherein when the LED die 40 emits light and generates thermal energy, the insulating heat dissipation layer 12 is used to insulate the thermal energy from the heat. The circuit layer 113 on one surface of the substrate 112 is conducted to the circuit layer 114 of the other surface to dissipate heat outward, that is, to the carrier substrate 11 (the heat dissipation substrate 10) and the heat sink 70 to dissipate heat outward. In order to achieve good heat dissipation, and avoid the short circuit. An LED die 40 is illustrated in FIG. 5 as an example but is not intended to limit the invention. In addition, the number and position of the heat conducting holes 115 as shown in FIG. 5 are not limited, but the main position of the heat energy generation between the circuit layer 113 and the LED die 40 is electrically connected. Preferably, when the heat conducting holes 115 are disposed close to the heat energy generation, the heat dissipation effect is relatively enhanced.
所述之散熱基板10,其中該陶瓷材30包含線材或粉末。The heat dissipation substrate 10, wherein the ceramic material 30 comprises a wire or a powder.
以實際之應用而言,所述之散熱基板10,其中該絕緣散熱層12之形成厚度係依據該絕緣散熱層12所欲達成電性絕緣耐壓之程度而預先設定。In practical applications, the heat-dissipating substrate 10 has a thickness formed according to the degree to which the insulating heat-dissipating layer 12 is to achieve electrical insulation withstand voltage.
所述之散熱基板10,其中該絕緣散熱層12之形成厚度係依據該高壓霧狀噴塗在該承載基板11之表面111上的噴塗時間而預先設定。In the heat dissipation substrate 10, the thickness of the insulating heat dissipation layer 12 is preset according to the spraying time of the high pressure spray coating on the surface 111 of the carrier substrate 11.
所述之散熱基板10,其中該絕緣散熱層12之厚度係設定為1~50微米(μm),以使電性絕緣耐壓之程度達到300伏特(V)或以上。The heat dissipation substrate 10 has a thickness of the insulating heat dissipation layer 12 of 1 to 50 micrometers (μm) so that the electrical insulation withstand voltage reaches 300 volts (V) or more.
所述之散熱基板10如圖3-4所示,其中該散熱基板10之絕緣散熱層12之外表面進一步設置一線路層13,該線路層13係利用選自印刷線路板(PCB)線路製程、網版印刷製程、半導體製程之族群中一種製程以形成在該絕緣散熱層12之表面上,供一LED晶粒40能以導線(Wire bond)方式如圖3所示或覆晶(Flip Chip)方式如圖4所示,電性連結在該散熱基板10上以形成一LED封裝如圖3所示之導線式LED封裝50或如圖4所示之覆晶式LED封裝60。該LED封裝50、60進一步可與一散熱器(heat sink)70結合應用;其中當該LED晶粒40發光並產生熱能時,藉由該絕緣散熱層12以將該熱能傳導至該承載基板11及散熱器(heat sink)70以向外散熱。藉以達成良好之散熱功效,並避免造成短路之困擾。在圖3-4中以一LED晶粒40為例說明但非用以限制本發明。The heat dissipation substrate 10 is as shown in FIG. 3-4, wherein a surface layer 13 is further disposed on the outer surface of the heat dissipation layer 12 of the heat dissipation substrate 10, and the circuit layer 13 is processed by using a printed circuit board (PCB) circuit. A process in the group of the screen printing process and the semiconductor process is formed on the surface of the insulating heat dissipation layer 12, and an LED die 40 can be wire-bonded as shown in FIG. 3 or flip-chip (Flip Chip). The method is electrically connected to the heat dissipation substrate 10 to form an LED package 50 as shown in FIG. 3 or a flip chip LED package 60 as shown in FIG. The LED package 50, 60 can be further combined with a heat sink 70; wherein the LED heat sink 12 is used to conduct the thermal energy to the carrier substrate 11 when the LED die 40 emits light and generates thermal energy. And a heat sink 70 to dissipate heat outward. In order to achieve good heat dissipation, and avoid the short circuit. An LED die 40 is illustrated in FIGS. 3-4 as an example but is not intended to limit the invention.
由上可知,本發明之散熱基板10中,該承載基板11可選自鋁基板、鎂基板、鋁鎂合金基板、鈦合金基板、銅基板、具有導熱孔之印刷電路板(PCB)式複合基板之族群中一種基板,而該陶瓷材30可選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種陶瓷材,並不受該承載基板11之材質的限制。因此,本發明之散熱基板10與以微弧電漿方法製成陶瓷層之習知技術比較,本發明之散熱基板10至少具有下列優點:一是該絕緣散熱層12之材質不受該承載基板11之材質的限制,如可選擇鎂 基板作為承載基板11而選擇氧化鋁作為該陶瓷材30以在鎂基板之表面上形成一氧化鋁材質之絕緣散熱層12,相對增加該承載基板11及絕緣散熱層12(陶瓷材30)之間材質之選擇性;另一是該絕緣散熱層12之厚度可隨噴塗時間之增加而相對加厚,足以克服習知技術以微弧電漿方法生成之陶瓷層的厚度相對較薄而無法隨散熱基板之絕緣耐壓要求加厚的缺點。As can be seen from the above, in the heat dissipation substrate 10 of the present invention, the carrier substrate 11 can be selected from the group consisting of an aluminum substrate, a magnesium substrate, an aluminum-magnesium alloy substrate, a titanium alloy substrate, a copper substrate, and a printed circuit board (PCB) composite substrate having a heat conductive hole. a substrate in the group, and the ceramic material 30 may be selected from the group consisting of alumina, magnesium oxide, titanium oxide, aluminum nitride, magnesium nitride, and titanium nitride, and is not affected by the material of the carrier substrate 11. limits. Therefore, the heat dissipation substrate 10 of the present invention has at least the following advantages compared with the conventional technique of forming a ceramic layer by a micro-arc plasma method: First, the material of the insulating heat dissipation layer 12 is not affected by the carrier substrate. 11 material limits, such as magnesium The substrate is used as the carrier substrate 11 and alumina is selected as the ceramic material 30 to form an insulating heat dissipation layer 12 of alumina on the surface of the magnesium substrate, and the carrier substrate 11 and the insulating heat dissipation layer 12 (ceramic material 30) are relatively increased. The selectivity of the material; the other is that the thickness of the insulating heat dissipation layer 12 can be relatively thickened with the increase of the spraying time, which is sufficient to overcome the conventional technology. The thickness of the ceramic layer formed by the micro-arc plasma method is relatively thin and cannot be dissipated with heat. The disadvantage of the thickening resistance of the substrate is required to be thickened.
參考圖6A-6C所示,其分別係本發明之具絕緣散熱層之散熱基板10之製造方法之流程示意圖,本發明具絕緣散熱層之散熱基板10之製造方法之一優選實施例包含下列步驟:提供一承載基板11如圖6A所示,該承載基板11係一具散熱作用之基板,其係選自:鋁基板、鎂基板、鋁鎂合金基板、鈦合金基板、銅基板、具有導熱孔之印刷電路板(PCB)式複合基板之族群中一種基板;提供一陶瓷材30如圖6B所示,該陶瓷材係選自氧化鋁、氧化鎂、氧化鈦、氮化鋁、氮化鎂、氮化鈦之族群中一種;提供一電漿熔射設備20如圖6B所示,用以液化上述之陶瓷材30;利用電漿熔射方法,以高壓霧狀噴塗方式如圖6B所示,將上述液化後之陶瓷材30且依預定之噴塗時間噴塗在該承載基板11之一預定表面111上,以在該表面111上包覆形成一由該陶瓷材30之材質構成且具有預定厚度之絕緣散熱層12;使該絕緣散熱層12硬化,以完成一具有預定厚度之絕緣散熱層12之散熱基板10。Referring to FIG. 6A-6C, which are schematic flowcharts of a manufacturing method of the heat dissipation substrate 10 having the insulating heat dissipation layer of the present invention, a preferred embodiment of the method for manufacturing the heat dissipation substrate 10 having the insulating heat dissipation layer of the present invention comprises the following steps. A carrier substrate 11 is provided. As shown in FIG. 6A, the carrier substrate 11 is a heat-dissipating substrate selected from the group consisting of an aluminum substrate, a magnesium substrate, an aluminum-magnesium alloy substrate, a titanium alloy substrate, a copper substrate, and a thermal via. a substrate of a group of printed circuit board (PCB) type composite substrates; providing a ceramic material 30 as shown in FIG. 6B, the ceramic material is selected from the group consisting of alumina, magnesia, titania, aluminum nitride, magnesium nitride, One of the groups of titanium nitride; providing a plasma spraying device 20 as shown in FIG. 6B for liquefying the above-mentioned ceramic material 30; using a plasma spraying method, spraying in a high pressure spray pattern as shown in FIG. 6B. The liquefied ceramic material 30 is sprayed on a predetermined surface 111 of the carrier substrate 11 according to a predetermined spraying time to be coated on the surface 111 to form a material composed of the ceramic material 30 and having a predetermined thickness. Insulating heat sink 12 The insulating heat dissipation layer 12 is hardened to complete the heat dissipation substrate 10 having the insulating heat dissipation layer 12 having a predetermined thickness.
以上所示僅為本發明之優選實施例,對本發明而言僅是說明性的,而非限制性的。在本專業技術領域具通常知 識人員理解,在本發明權利要求所限定的精神和範圍內可對其進行許多改變,修改,甚至等效的變更,但都將落入本發明的保護範圍內。The above are only the preferred embodiments of the present invention, and are merely illustrative and not restrictive. Commonly known in the art It will be appreciated by those skilled in the art that many changes, modifications, and equivalents may be made without departing from the spirit and scope of the invention.
10‧‧‧散熱基板10‧‧‧heated substrate
11‧‧‧承載基板11‧‧‧Carrier substrate
12‧‧‧絕緣散熱層12‧‧‧Insulated heat sink
111‧‧‧表面111‧‧‧ surface
112‧‧‧絕緣基板112‧‧‧Insert substrate
113、114‧‧‧線路層113, 114‧‧‧ circuit layer
115‧‧‧導熱孔115‧‧‧thermal hole
116‧‧‧導熱材料116‧‧‧thermal materials
20‧‧‧電漿熔射設備20‧‧‧Plastic spray equipment
30‧‧‧陶瓷材30‧‧‧Ceramic materials
40‧‧‧LED晶粒40‧‧‧LED dies
50、60‧‧‧LED封裝50, 60‧‧‧LED package
70‧‧‧散熱器(heat sink)70‧‧‧heat sink
圖1係本發明之具絕緣散熱層之散熱基板(金屬基板)之一實施例之結構剖面示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of an embodiment of a heat dissipating substrate (metal substrate) having an insulating heat dissipating layer according to the present invention.
圖2係本發明之具絕緣散熱層之散熱基板(印刷電路板式複合基板)之一實施例之結構剖面示意圖。2 is a cross-sectional view showing the structure of an embodiment of a heat dissipating substrate (printed circuit board type composite substrate) having an insulating heat dissipating layer according to the present invention.
圖3係本發明之具絕緣散熱層之散熱基板應用於LED封裝及一散熱器(heat sink)表面之一實施例結構剖面示意圖。3 is a cross-sectional view showing the structure of an embodiment of the heat sink substrate with an insulating heat dissipation layer applied to the LED package and a heat sink surface of the present invention.
圖4係本發明之具絕緣散熱層之散熱基板應用於LED封裝及一散熱器(heat sink)表面之另一實施例結構剖面示意圖。4 is a cross-sectional view showing another embodiment of a heat dissipating substrate having an insulating heat dissipating layer applied to an LED package and a heat sink surface of the present invention.
圖5係本發明之具絕緣散熱層之散熱基板應用於LED封裝及一散熱器(heat sink)表面之步一實施例結構剖面示意圖。FIG. 5 is a cross-sectional view showing the structure of a heat dissipating substrate having an insulating heat dissipating layer applied to an LED package and a heat sink surface according to an embodiment of the present invention.
圖6A-6C分別係本發明之具絕緣散熱層之散熱基板之製造方法之流程示意圖。6A-6C are schematic flow diagrams showing a method of manufacturing a heat dissipation substrate having an insulating heat dissipation layer according to the present invention.
10‧‧‧散熱基板10‧‧‧heated substrate
11‧‧‧承載基板11‧‧‧Carrier substrate
12‧‧‧絕緣散熱層12‧‧‧Insulated heat sink
111‧‧‧表面111‧‧‧ surface
20‧‧‧電漿熔射設備20‧‧‧Plastic spray equipment
30‧‧‧陶瓷材30‧‧‧Ceramic materials
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