JP5168871B2 - Thin film carrier substrate and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thin film carrier substrate used for three-dimensional microfabrication and the like and a manufacturing method thereof.

  As a method of manufacturing a three-dimensional microstructure having an arbitrary shape with nanometer accuracy, a method of manufacturing a microstructure using room temperature bonding is known (see, for example, Patent Document 1). In this manufacturing method, a plurality of thin films having a predetermined pattern are formed on a donor substrate having a release layer provided on the substrate, a sacrificial layer as a target substrate is attached to an XY stage, and a release layer is formed. The thin film pattern is peeled off one by one, and sequentially transferred and laminated on the sacrificial layer to produce a microstructure.

Usually, in a donor substrate, in order to make it easy to peel off a thin film pattern (also referred to as a transfer pattern), a release layer is provided to reduce the adhesion of the thin film pattern. In addition to the thin film pattern, a positioning pattern for determining the position of the substrate in the laminating apparatus is also formed. This positioning pattern causes a decrease in the accuracy of the laminated structure when peeling or misalignment occurs during handling of the donor substrate. Therefore, the positioning pattern is required to be difficult to peel off, that is, to have high adhesion.
Japanese Patent No. 3161362

  An object of the present invention is to provide a thin film carrier substrate and a method for manufacturing the same, which can increase the adhesion of a positioning pattern.

  In order to achieve the above object, one embodiment of the present invention provides the following thin film carrier substrate and method for producing the same.

[1] a substrate;
A plurality of transfer patterns formed on the substrate via a base film which is a metal film made of SiO ₂ , fluorinated polyimide or Au,
A positioning pattern directly formed on the substrate so as to have a greater adhesion than the plurality of transfer patterns;
A thin film carrier substrate comprising:

[2] a substrate;
A plurality of transfer patterns directly formed on the substrate;
Wherein a plurality of such that greater adhesion force than a transfer pattern, on the substrate, Ti, and position-decided Me pattern formed through the base film is a metal film made of Cr or Cu,
A thin film carrier substrate comprising:

[3] a substrate;
A release layer having a plurality of fluorination treatment parts formed on the substrate and partially fluorinated,
A plurality of transfer patterns formed on the plurality of fluorination portions;
The positioning pattern formed in a region where the plurality of fluorination treatment portions of the release layer are not formed so as to have a greater adhesion than the plurality of transfer patterns;
A thin film carrier substrate comprising:

[4] a first step of forming a release layer on the substrate;
A second step of partially subjecting the release layer to fluorination treatment to form a plurality of fluorination treatment portions on the release layer;
A third step of forming a plurality of transfer patterns on the plurality of fluorination treatment units and a positioning pattern on the release layer other than the fluorination treatment unit by the same step;
Only including,
The second step is performed such that an adhesion force between the release layer and the plurality of transfer patterns is smaller than an adhesion force between the release layer and the positioning pattern. Manufacturing method of thin film carrier substrate.

[ 5 ] a first step of forming a metal film partially made of Ti, Cr or Cu on the substrate;
By the same process, a second step of forming a plurality of transfer patterns the positioning pattern in the metal film is formed parts, and on the substrate other than a portion where the metal film is formed,
Only including,
The first step is performed so that an adhesion force between the metal film and the positioning pattern is larger than an adhesion force between the substrate and the plurality of transfer patterns. A method for manufacturing a substrate.

According to the thin film carrier substrate of the first and second aspects, the adhesion of the positioning pattern to the substrate can be made larger than that of the transfer pattern. Further, the transfer pattern can be directly provided on the substrate. In addition, the adhesion of the positioning pattern can be increased. Further, by reducing the adhesion of the transfer pattern, the adhesion of the positioning pattern can be relatively increased. Furthermore, it is possible to suppress the peeling and displacement of the positioning pattern without providing a base film.
According to the thin film carrier substrate of the third aspect, even in the configuration having the release layer, the adhesion of the positioning pattern can be made larger than that of the transfer pattern.
According to the method for manufacturing a thin film carrier substrate of claim 4, even when a release layer is provided, the adhesion of the positioning pattern can be made larger than that of the transfer pattern, and the adhesion of the transfer pattern can be reduced. It is possible to easily form a region for this purpose.
According to the method of manufacturing a thin film carrier substrate 請 Motomeko 5, can be greater than the transfer pattern the adhesion of the positioning pattern for the substrate.

[First Embodiment]
FIG. 1 is a plan view showing a completed state of the thin film carrier substrate according to the first embodiment of the present invention. Here, a donor substrate 100 as a thin film carrier substrate is shown, and this donor substrate 100 is a plurality of transfer patterns 11 that are finally transferred to a target substrate (not shown) and the donor substrate 100 in a stacking device (not shown). At least two positioning patterns 10 for determining the position are provided on the Si wafer.

  FIG. 2 is a process diagram showing a method of manufacturing the thin film carrier substrate shown in FIG. In the same figure, (a)-(g) shows the processing state of the order of a process, and is equivalent to sectional drawing of the AA line of FIG. In the drawing, the mask is shown in a sectional view.

  In the first embodiment, only the release layer other than just below the positioning pattern is subjected to fluorination treatment to improve the release property of the transfer pattern.

  First, as shown in FIG. 2A, a substrate 3 including a Si wafer 1 and a polyimide layer 2 as a release layer on the Si wafer 1 is prepared.

  Next, as shown in FIG. 2B, a positive resist is applied on the polyimide layer 2 to form a resist film 4, and the fluorination treatment unit 6 provided in the step described with reference to FIG. Exposure is performed using the first mask 5 on which a pattern corresponding to the above is formed. At this time, the first mask 5 is set so that the pattern substantially overlaps the position of the positioning pattern patterned by the second mask 9 used in the subsequent process.

Next, as shown in FIG. 2C, after removing the resist film 4, a fluorination treatment with CF ₄ (Freon) is performed on the portion where the resist film 4 is not provided in order to improve the releasability. To form the fluorination treatment section 6.

  Further, as shown in FIG. 2D, an Al thin film 7 is deposited on the polyimide layer 2.

  Next, as shown in FIG. 2E, a positive resist is applied on the Al thin film 7 to form a resist film 8, and a positioning pattern and a transfer pattern are formed using the second mask 9. For exposure.

Next, as shown in FIG. 2F, the Al thin film 7 is etched by Cl ₂ gas (chlorine gas).

  Next, as shown in FIG. 2G, the resist film 8 is removed.

  As described above, a donor substrate in which a plurality of positioning patterns 10 are arranged on the polyimide layer 2 and a plurality of transfer patterns 11 are arranged on the fluorination processing unit 6, that is, the same as shown in FIG. The donor substrate 100 is completed as a thin film carrier substrate in which patterns having different releasability are formed on the substrate. As described above, by providing the transfer pattern 11 on the fluorination processing unit 6, the adhesion of the transfer pattern 11 can be made smaller than that of the positioning pattern 10.

[Second Embodiment]
FIG. 3 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the second embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 3A, a negative resist is applied on the Si wafer 1 to form a resist film 4, and the resist film 4 is provided in the step of FIG. 3B. Exposure is performed using the first mask 5 having a pattern corresponding to the base film 21. At this time, the first mask 5 is set so that the pattern substantially overlaps the position of the alignment mark patterned by the second mask 9.

  Next, as shown in FIG. 3B, after removing the final exposed portion of the resist film 4, the underlying film 21 made of Ti or Cr having excellent adhesion to the Si wafer 1 over the entire remaining resist film 4. (Metal film) is deposited to a thickness of about several tens of nanometers.

  Next, as shown in FIG. 3C, the resist film 4 is removed and the base film 21 is lifted off.

  Next, as shown in FIG. 3D, an Au thin film 22 is formed on the surface of the base film 21 and the exposed surface of the Si wafer 1.

  Next, as shown in FIG. 3E, a positive resist is applied on the Au thin film 22 to form a resist film 23, and a second pattern having an exposure pattern corresponding to the positioning pattern 10 and the transfer pattern 11. The mask 9 is used for exposure.

Next, the resist film 23 is removed, and the Au thin film 22 is etched with a mixed solution of I ₂ + NH ₄ I (iodine and ammonium iodide) as shown in FIG.

  As described above, as shown in FIG. 3G, the donor substrate 100 in which the positioning pattern 10 is disposed on the base film 21 and the plurality of transfer patterns 11 is disposed on the Si wafer 1, that is, A donor substrate 100 is completed as a thin film carrier substrate in which patterns having different releasability are formed on the same substrate.

[Third Embodiment]
FIG. 4 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the third embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 4A, a negative resist is applied on the Si wafer 1 to form a resist film 4, and the resist film 401 is provided in the step of FIG. 3B. Exposure is performed using the first mask 5 having a pattern corresponding to the ground films 301 and 302. At this time, the first mask 5 is set so that the pattern substantially overlaps the position of the transfer thin film patterned by the second mask 9.

  Next, as shown in FIG. 4B, after the final exposure portion of the resist film 401 is removed, the underlying film 301 made of Ti or Cr having excellent adhesion to the Si wafer 1 on the entire surface of the remaining resist film 4. A base film 302 made of Au or Pt that is excellent in releasability from the (metal film) and transfer thin film is deposited to a thickness of about several tens of nanometers.

  Next, as shown in FIG. 4C, the resist film 401 is removed and the base films 301 and 302 are lifted off.

Next, as shown in FIG. 3D, the SiO ₂ thin film 20 is formed on the surface of the base film 302 and the exposed surface of the Si wafer 1.

Next, as shown in FIG. 4 (e), a positive resist is applied on the SiO ₂ thin film 20 to form a resist film 402, which has exposure patterns corresponding to the positioning pattern 10 and the transfer pattern 11. Exposure is performed using the second mask 9.

Next, the resist film 402 is removed, and the SiO ₂ thin film 20 is etched with a buffered hydrofluoric acid solution as shown in FIG.

  As described above, as shown in FIG. 4G, the donor substrate 100 in which the positioning pattern 10 is disposed on the Si wafer 1 and the plurality of transfer patterns 11 are disposed on the base film 302, that is, A donor substrate 100 is completed as a thin film carrier substrate in which patterns having different releasability are formed on the same substrate.

[Fourth Embodiment]
FIG. 5 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the third embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, a polyimide film substrate 31 shown in FIG.

Next, as shown in FIG. 5B, a resist film 32 is formed on one surface of the polyimide film substrate 31 by applying a negative resist. Next, exposure is performed using the first mask 5 having a pattern corresponding to the base film 33 provided in the step (c) of FIG . At this time, the first
The mask 5 is arranged so that the pattern substantially overlaps the position of the alignment mark patterned by the second mask 9.

Next, as shown in FIG. 5C, the resist film 32 is developed. Next, for the purpose of imparting hydrophilicity, the exposed surface is irradiated with O ₂ plasma for several tens of seconds. By this O ₂ plasma irradiation, the adhesion of the alignment mark pattern to the polyimide film substrate 31 is increased. For Cu, nitrogen plasma or argon plasma can be used instead of O ₂ plasma.

  Next, Cu is electrolessly plated to form a base film 33 (Cu plating film).

  Next, as shown in FIG. 5D, after removing the final exposed portion of the resist film 32, a Cu plating film 34 is formed on the surface of the base film 33 and the polyimide film substrate 31.

  Next, as shown in FIG. 5E, a positive resist is applied on the Cu plating film 34 to form a resist film 35. Next, exposure for forming the positioning pattern 10 and the transfer pattern 11 is performed using the second mask 9.

Next, as shown in FIG. 5F, the Cu plating film 34 is wet-etched with an FeCl ₂ (ferric chloride) aqueous solution. Next, the resist film 35 is removed.

As described above, as shown in FIG. 5G, a plurality of positioning patterns 10 are disposed on the base film 33, and a plurality of transfer patterns 11 are disposed on the polyimide film substrate 31. 100, that is, a donor substrate 100 as a thin film carrier substrate in which patterns having different releasability are formed on the same substrate as shown in FIG. 1 is completed.

[Fifth Embodiment]
FIG. 6 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the fifth embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 6A, a resist film 42 is formed on a stainless steel (SUS) substrate 41 by applying a negative resist. Next, exposure is performed using the first mask 5. At this time, the first mask 5 is set so that the pattern substantially overlaps the position of the alignment mark patterned by the second mask 9.

  Next, as shown in FIG. 6B, after developing the resist film 42, a strike plating film made of Ti is formed as a base film 43 in an unexposed portion. By providing the base film 43, the adhesion of the alignment mark pattern to the stainless steel substrate 41 is increased.

  Next, as shown in FIG. 6C, the resist film 42 is removed.

  Next, as shown in FIG. 6D, a negative resist is applied to form a resist film 44, and exposure for forming the positioning pattern 10 and the transfer pattern 11 using the second mask 9 is performed. Then, as shown in FIG. 6E, the resist film 44 is left in the portion exposed through the second mask 9.

  Next, as shown in FIG. 6F, a Ni film 45 is grown on the exposed surfaces of the stainless steel substrate 41 and the base film 43 by electroforming. Next, the resist film 44 is removed.

  As described above, as shown in FIG. 6G, a donor substrate in which a plurality of positioning patterns 10 are arranged on the surface of the base film 43 and a plurality of transfer patterns 11 are arranged on the surface of the stainless steel substrate 41. 100, that is, a donor substrate 100 as a thin film carrier substrate in which patterns having different releasability are formed on the same substrate as shown in FIG. 1 is completed.

[Sixth Embodiment]
FIG. 7 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the sixth embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 7A, an Al film 51 is deposited over the entire area of one side of the Si wafer 1.

  Next, as shown in FIG. 7B, a positive resist is applied to form a resist film 52, and exposure for forming the positioning pattern 10 and the transfer pattern 11 using the second mask 9. I do.

Next, as shown in FIG. 7C, the resist film 52 is dry-etched with a Cl ₂ gas.

  Next, as shown in FIG. 7D, the resist film 52 is removed, and the Al film 51 is exposed.

  Next, a laser generator 53 is prepared, and as shown in FIGS. 7E and 7F, each pattern 55 corresponding to the alignment mark is individually irradiated with laser light 54 for a predetermined time. By irradiating only the pattern 55 with the laser beam 54 and heating it, the irradiated portion of the laser beam 54 can be eutectic, thereby increasing the adhesion of the positioning pattern 10 to the Si wafer 1. Can do.

  As described above, as shown in FIG. 7G, the donor substrate 100 in which the plurality of positioning patterns 10 by the pattern 55 irradiated with the laser light 54 and the plurality of transfer patterns 11 are arranged on the Si wafer 1. Is completed.

[Seventh Embodiment]
FIG. 8 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the sixth embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 8A, an Al film 51 is deposited over the entire area of one side of the Si wafer 1.

  Next, as shown in FIG. 8B, a positive resist is applied to form a resist film 52, and exposure is performed using the first mask 5.

Next, as shown in FIG. 8C, the resist film 52 is dry-etched with Cl ₂ gas.

  Next, as shown in FIG. 8D, the resist film 52 is removed, and the Al film 51 is exposed.

  Next, as shown in FIG. 8E, a transparent resin seal 61 is attached to each of the patterns 55 corresponding to the alignment marks. The resin seal 61 needs to be transparent because the image is recognized by the imaging device or camera of the laminating apparatus. The resin seal 61 may be a sheet.

  Instead of the resin seal 61, as shown in FIG. 8 (f), other than the pattern 55 may be masked using a metal mask 62, and an ITO (Indium Tin Oxide) transparent thin film 63 may be deposited from above. When a non-transparent seal or a deposited thin film is used, the cross-shaped alignment mark is fixed in a state that can be recognized by the image sensor so that alignment can be performed without any problem.

  As described above, as shown in FIG. 8G, the thin film having the positioning pattern 10 fixed by the resin seal 61 and the ITO transparent thin film 63 and the plurality of transfer patterns 11 arranged on the Si wafer 1. A donor substrate 100 as a carrier substrate is completed. As described above, the positioning pattern 10 is fixed by the fixing material such as the resin seal 61 and the ITO transparent thin film 63, so that the adhesion of the positioning pattern 10 to the Si wafer 1 is increased.

[Eighth Embodiment]
FIG. 9 is a process diagram showing a method of manufacturing a thin film carrier substrate according to the seventh embodiment of the present invention. In the same figure, (a)-(g) shows the processing state of a process order.

  First, as shown in FIG. 9A, an Al film 51 is deposited over the entire area of one side of the Si wafer 1.

  Next, as shown in FIG. 9B, a positive resist is applied to form a resist film 52, and exposure for forming the positioning pattern 10 and the transfer pattern 11 using the second mask 9. I do.

Next, as shown in FIG. 9C, the resist film 52 is dry-etched with Cl ₂ gas.

  Next, as shown in FIG. 9D, the resist film 52 is removed, and the Al film 51 is exposed.

  Next, as shown in FIGS. 9E and 9F, the transparent adhesive 72 is sprayed from the nozzles of the ink jet apparatus 71 to the pattern 55 corresponding to the alignment mark by the ink jet apparatus 71. An adhesive film 73 is formed to cover the film. By forming the adhesive film 73 on each pattern 55, the positioning pattern 10 is fixed to the Si wafer 1 by the adhesive film 73, so that the adhesion force of the positioning pattern 10 to the Si wafer 1 is increased. .

  As described above, as shown in FIG. 9G, the plurality of positioning patterns 10 to which the adhesive film 73 is applied by the ink jet apparatus 71 and the plurality of transfer patterns 11 are arranged on the Si wafer 1. A donor substrate 100 as a thin film carrier substrate is completed.

[Other embodiments]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. For example, the combination of the components between the embodiments can be arbitrarily performed. For example, a thin film carrier substrate by a combination of the first embodiment and other embodiments, a combination of the second to fourth embodiments and the sixth and seventh embodiments, and a manufacturing method thereof are possible. It is.

  In the sixth and seventh embodiments, the resin seal 61, the ITO transparent thin film 63, and the adhesive film 73 are desirably provided over the entire positioning pattern 10, but may be provided in part. Good.

It is a top view which shows the completion state of the thin film carrier substrate which concerns on the 1st Embodiment of this invention. It is process drawing which shows the manufacturing method of the semiconductor substrate shown in FIG. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 2nd Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 3rd Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 4th Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 5th Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 6th Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 7th Embodiment of this invention. It is process drawing which shows the manufacturing method of the thin film carrier substrate which concerns on the 8th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si wafer 2 Polyimide layer 3 Substrate 4,8,23,32,42,44,52 Resist film 5 1st mask 6 Fluorination process part 7,22,51 Al thin film 9 2nd mask 10 Positioning pattern 11 Transfer pattern 20 SiO ₂ film 21, 33, 43 Base film 31 Polyimide film substrate 34 Cu plating film 41 Stainless steel substrate 45 Ni film 53 Laser generator 54 Laser light 55 Pattern 61 Resin seal 62 Metal mask 63 ITO transparent thin film 71 Inkjet device 72 Transparent adhesive 73 Adhesive film 100 Donor substrate (thin film carrier substrate)
301,302 Base film 401,402 Resist film

Claims (5)

A substrate,
A plurality of transfer patterns formed on the substrate via a base film which is a metal film made of SiO ₂ , fluorinated polyimide or Au,
A positioning pattern directly formed on the substrate so as to have a greater adhesion than the plurality of transfer patterns;
A thin film carrier substrate comprising: A substrate,
A plurality of transfer patterns directly formed on the substrate;
Wherein a plurality of such that greater adhesion force than a transfer pattern, on the substrate, Ti, and position-decided Me pattern formed through the base film is a metal film made of Cr or Cu,
A thin film carrier substrate comprising: A substrate,
A release layer having a plurality of fluorination treatment parts formed on the substrate and partially fluorinated,
A plurality of transfer patterns formed on the plurality of fluorination portions;
The positioning pattern formed in a region where the plurality of fluorination treatment portions of the release layer are not formed so as to have a greater adhesion than the plurality of transfer patterns;
A thin film carrier substrate comprising: A first step of forming a release layer on the substrate;
A second step of partially subjecting the release layer to fluorination treatment to form a plurality of fluorination treatment portions on the release layer;
A third step of forming a plurality of transfer patterns on the plurality of fluorination treatment units and a positioning pattern on the release layer other than the fluorination treatment unit by the same step;
Only including,
The second step is performed such that an adhesion force between the release layer and the plurality of transfer patterns is smaller than an adhesion force between the release layer and the positioning pattern. Manufacturing method of thin film carrier substrate. A first step of forming a metal film partially made of Ti, Cr or Cu on the substrate;
By the same process, a second step of forming a plurality of transfer patterns the positioning pattern in the metal film is formed parts, and on the substrate other than a portion where the metal film is formed,
Only including,
The first step is performed so that an adhesion force between the metal film and the positioning pattern is larger than an adhesion force between the substrate and the plurality of transfer patterns. A method for manufacturing a substrate.

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