JP5162129B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5162129B2 JP5162129B2 JP2006514391A JP2006514391A JP5162129B2 JP 5162129 B2 JP5162129 B2 JP 5162129B2 JP 2006514391 A JP2006514391 A JP 2006514391A JP 2006514391 A JP2006514391 A JP 2006514391A JP 5162129 B2 JP5162129 B2 JP 5162129B2
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 239000010408 film Substances 0.000 claims description 191
- 238000009792 diffusion process Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005468 ion implantation Methods 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 24
- 230000000694 effects Effects 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 description 52
- 238000000034 method Methods 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 17
- 230000015654 memory Effects 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Description
(実施例1)
図3Aおよび図3Bは、SONOS構造のゲート部と埋め込みビットライン構造のソース/ドレイン部を有する本発明の半導体装置の第1の構成例を説明するためのセルの断面図で、図3Aはコア領域、図3Bはセル周辺領域の様子を図示している。コア領域には複数のセルが配列されており、これらのセルの各々は、図2Aで示した基本構成を有し、図2Bおよび図2Cに基づいて説明した動作を行う。
(実施例2)
図7Aおよび図7Bは、本発明の半導体装置の第2の構成例を説明するためのセルの断面図で、図7Aはコア領域、図7Bはセル周辺領域の様子を図示している。また、図8A乃至図8Cは、この半導体装置の製造工程を説明するための図で、各々、左図はコア領域、右図はセル周辺領域の様子を図示している。
(実施例3)
本実施例の半導体装置の構成は図7Aおよび図7Bに図示したものと同様であるが、n型拡散領域の形成プロセスが異なる。
Claims (8)
- チャネル領域を挟んで配置された一対の第1拡散領域を有する基板と、
該基板上に形成された酸化膜および該酸化膜上に形成された電荷蓄積層を有するゲート部とを有し、
前記電荷蓄積層は当該電荷蓄積層中に離隔して位置する複数のビット領域を有する電気的絶縁膜であり、
前記酸化膜は、前記ビット領域の各々に対応する部分がトンネル酸化膜として作用する膜厚の薄膜部と、前記ビット領域間に位置する部分がトンネル効果による電荷輸送を抑制する膜厚の厚膜部とを有し、
前記電荷蓄積層は上側を上部酸化膜によって覆われており、前記電荷蓄積層および前記上部酸化膜はいずれも前記薄膜部および前記厚膜部上に一定の厚みで連続して設けられており、
前記一対の第1拡散領域の間に、前記一対の第1拡散領域とは独立に、前記一対の第1拡散領域からは離間して第2拡散領域が設けられており、該第2拡散領域は前記チャネル領域の中央部にのみ設けられている半導体装置。 - 前記一対の第1拡散領域は何れも、バイアス条件に応じてソース領域もしくはドレイン領域となるソース/ドレイン領域であり、当該一対の第1拡散領域はチャネル領域の両端に対称に位置している請求項1に記載の半導体装置。
- 前記第2拡散領域は、前記基板の表面から垂直下方に延在して設けられている請求項1に記載の半導体装置。
- 前記第2拡散領域は、イオン注入により形成された領域である請求項1又は2に記載の半導体装置。
- 前記第1拡散領域は埋め込みビットライン構造を有し、請求項1項ないし4の何れかに記載の一対の第1拡散領域が複数配列されて構成されている半導体装置。
- 前記基板はシリコンであり、前記酸化膜はシリコン酸化膜であり、前記電荷蓄積層はシリコン窒化膜である請求項1ないし5の何れかに記載の半導体装置。
- 前記ゲート部は、MNOS構造もしくはSONOS構造を有する請求項1から6の何れかに記載の半導体装置。
- 前記第2拡散領域のドーパントは硼素であり、前記第1拡散領域のドーパントは砒素である請求項1ないし7の何れかに記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/008319 WO2005122246A1 (ja) | 2004-06-14 | 2004-06-14 | 半導体装置および半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012247193A Division JP5552521B2 (ja) | 2012-11-09 | 2012-11-09 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005122246A1 JPWO2005122246A1 (ja) | 2008-07-31 |
JP5162129B2 true JP5162129B2 (ja) | 2013-03-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006514391A Expired - Fee Related JP5162129B2 (ja) | 2004-06-14 | 2004-06-14 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7309893B2 (ja) |
JP (1) | JP5162129B2 (ja) |
WO (1) | WO2005122246A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053270A (ja) * | 2006-08-22 | 2008-03-06 | Nec Electronics Corp | 半導体記憶装置、及びその製造方法 |
US8658495B2 (en) * | 2012-03-08 | 2014-02-25 | Ememory Technology Inc. | Method of fabricating erasable programmable single-poly nonvolatile memory |
US8987802B2 (en) * | 2013-02-28 | 2015-03-24 | Sandisk Technologies Inc. | Method for using nanoparticles to make uniform discrete floating gate layer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864697A (ja) * | 1994-08-23 | 1996-03-08 | Nippon Steel Corp | 不揮発性半導体記憶装置の製造方法 |
JPH1032271A (ja) * | 1996-07-12 | 1998-02-03 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
JPH10209305A (ja) * | 1997-01-17 | 1998-08-07 | Sony Corp | 不揮発性半導体記憶装置 |
JP2001077215A (ja) * | 1999-09-03 | 2001-03-23 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
JP2004015051A (ja) * | 2002-06-04 | 2004-01-15 | Samsung Electronics Co Ltd | 不揮発性メモリセル、メモリ素子、及び不揮発性メモリセルの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6043124A (en) * | 1998-03-13 | 2000-03-28 | Texas Instruments-Acer Incorporated | Method for forming high density nonvolatile memories with high capacitive-coupling ratio |
JP2001148430A (ja) | 1999-11-19 | 2001-05-29 | Nec Corp | 不揮発性半導体記憶装置 |
US6384448B1 (en) * | 2000-02-28 | 2002-05-07 | Micron Technology, Inc. | P-channel dynamic flash memory cells with ultrathin tunnel oxides |
-
2004
- 2004-06-14 WO PCT/JP2004/008319 patent/WO2005122246A1/ja active Application Filing
- 2004-06-14 JP JP2006514391A patent/JP5162129B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-14 US US11/152,547 patent/US7309893B2/en active Active
-
2007
- 2007-10-23 US US11/977,034 patent/US7387936B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864697A (ja) * | 1994-08-23 | 1996-03-08 | Nippon Steel Corp | 不揮発性半導体記憶装置の製造方法 |
JPH1032271A (ja) * | 1996-07-12 | 1998-02-03 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
JPH10209305A (ja) * | 1997-01-17 | 1998-08-07 | Sony Corp | 不揮発性半導体記憶装置 |
JP2001077215A (ja) * | 1999-09-03 | 2001-03-23 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
JP2004015051A (ja) * | 2002-06-04 | 2004-01-15 | Samsung Electronics Co Ltd | 不揮発性メモリセル、メモリ素子、及び不揮発性メモリセルの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005122246A1 (ja) | 2008-07-31 |
US7387936B2 (en) | 2008-06-17 |
US20060281259A1 (en) | 2006-12-14 |
US7309893B2 (en) | 2007-12-18 |
US20080064181A1 (en) | 2008-03-13 |
WO2005122246A1 (ja) | 2005-12-22 |
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