JP5147330B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5147330B2
JP5147330B2 JP2007214665A JP2007214665A JP5147330B2 JP 5147330 B2 JP5147330 B2 JP 5147330B2 JP 2007214665 A JP2007214665 A JP 2007214665A JP 2007214665 A JP2007214665 A JP 2007214665A JP 5147330 B2 JP5147330 B2 JP 5147330B2
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Japan
Prior art keywords
layer
laser beam
light absorption
insulating layer
light
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JP2007214665A
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English (en)
Japanese (ja)
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JP2008073768A5 (enExample
JP2008073768A (ja
Inventor
秀和 宮入
栄二 比嘉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007214665A priority Critical patent/JP5147330B2/ja
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Publication of JP2008073768A5 publication Critical patent/JP2008073768A5/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
JP2007214665A 2006-08-25 2007-08-21 半導体装置の作製方法 Expired - Fee Related JP5147330B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007214665A JP5147330B2 (ja) 2006-08-25 2007-08-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006229729 2006-08-25
JP2006229729 2006-08-25
JP2007214665A JP5147330B2 (ja) 2006-08-25 2007-08-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008073768A JP2008073768A (ja) 2008-04-03
JP2008073768A5 JP2008073768A5 (enExample) 2010-08-26
JP5147330B2 true JP5147330B2 (ja) 2013-02-20

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JP2007214665A Expired - Fee Related JP5147330B2 (ja) 2006-08-25 2007-08-21 半導体装置の作製方法

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5094535B2 (ja) * 2008-05-07 2012-12-12 富士フイルム株式会社 凹部形成方法、凹凸製品の製造方法、発光素子の製造方法および光学素子の製造方法
FR2932899B1 (fr) * 2008-06-23 2010-07-30 Commissariat Energie Atomique Procede d'elimination de defaut de gravure d'une couche metallique deposee sur un support souple.
JP5194129B2 (ja) * 2008-10-14 2013-05-08 旭化成株式会社 熱反応型レジスト材料、それを用いた熱リソグラフィ用積層体及びそれらを用いたモールドの製造方法
JP4859145B2 (ja) 2008-12-25 2012-01-25 独立行政法人産業技術総合研究所 エッチングレジスト
JP4973698B2 (ja) * 2009-06-30 2012-07-11 カシオ計算機株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2013082564A (ja) * 2011-10-06 2013-05-09 Disco Corp セラミックス基板のアブレーション加工方法
JP2013081957A (ja) * 2011-10-06 2013-05-09 Disco Corp パシベーション膜が積層された基板のアブレーション加工方法
CN103760749A (zh) * 2014-01-14 2014-04-30 北京京东方显示技术有限公司 薄膜图案的制造方法、显示基板
KR102712059B1 (ko) * 2016-12-23 2024-10-02 인텔 코포레이션 진보된 리소그래피 및 자기-조립 디바이스들
US10504733B2 (en) * 2017-01-19 2019-12-10 Texas Instruments Incorporated Etching platinum-containing thin film using protective cap layer
CN111566816B (zh) * 2020-04-14 2021-06-08 长江存储科技有限责任公司 用于形成具有背面源极触点的三维存储器件的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147285A (ja) * 1984-12-21 1986-07-04 キヤノン株式会社 表示素子の修復方法
JPS61269995A (ja) * 1985-05-23 1986-11-29 Takatou Seikan Kk レ−ザ光線による彫刻方法
JPH0646639B2 (ja) * 1988-05-25 1994-06-15 株式会社精工舎 逆スタガー型シリコン薄膜トランジスタの製造方法
JPH09113930A (ja) * 1995-10-16 1997-05-02 Sharp Corp アクティブマトリクス型液晶表示装置およびその断線修正方法
JP4584387B2 (ja) * 1999-11-19 2010-11-17 シャープ株式会社 表示装置及びその欠陥修復方法
JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体

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JP2008073768A (ja) 2008-04-03

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