JP5144516B2 - 砥材を有しない研磨システム - Google Patents

砥材を有しない研磨システム Download PDF

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Publication number
JP5144516B2
JP5144516B2 JP2008526997A JP2008526997A JP5144516B2 JP 5144516 B2 JP5144516 B2 JP 5144516B2 JP 2008526997 A JP2008526997 A JP 2008526997A JP 2008526997 A JP2008526997 A JP 2008526997A JP 5144516 B2 JP5144516 B2 JP 5144516B2
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JP
Japan
Prior art keywords
polishing
polishing system
substrate
potassium
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008526997A
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English (en)
Japanese (ja)
Other versions
JP2009505423A5 (enExample
JP2009505423A (ja
Inventor
チェリアン，アイザック
モーゲンボーグ，ケビン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009505423A publication Critical patent/JP2009505423A/ja
Publication of JP2009505423A5 publication Critical patent/JP2009505423A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008526997A 2005-08-17 2006-08-09 砥材を有しない研磨システム Expired - Fee Related JP5144516B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/205,428 2005-08-17
US11/205,428 US20070039926A1 (en) 2005-08-17 2005-08-17 Abrasive-free polishing system
PCT/US2006/030982 WO2007021716A2 (en) 2005-08-17 2006-08-09 Abrasive-free polishing system

Publications (3)

Publication Number Publication Date
JP2009505423A JP2009505423A (ja) 2009-02-05
JP2009505423A5 JP2009505423A5 (enExample) 2009-09-17
JP5144516B2 true JP5144516B2 (ja) 2013-02-13

Family

ID=37499371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008526997A Expired - Fee Related JP5144516B2 (ja) 2005-08-17 2006-08-09 砥材を有しない研磨システム

Country Status (11)

Country Link
US (1) US20070039926A1 (enExample)
EP (1) EP1924666B1 (enExample)
JP (1) JP5144516B2 (enExample)
KR (1) KR101109334B1 (enExample)
CN (1) CN101263209B (enExample)
AT (1) ATE528364T1 (enExample)
IL (1) IL189504A (enExample)
MY (1) MY146300A (enExample)
SG (1) SG178632A1 (enExample)
TW (1) TWI343296B (enExample)
WO (1) WO2007021716A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
DE112012001891B4 (de) * 2011-04-26 2016-09-15 Asahi Glass Company, Limited Verfahren zum Polieren eines nicht-Oxid-Einkristallsubstrats
JP5716838B2 (ja) * 2011-10-07 2015-05-13 旭硝子株式会社 研磨液
US11319460B2 (en) * 2017-03-23 2022-05-03 Fujimi Incorporated Polishing composition
CN114286846B (zh) * 2019-08-30 2023-06-06 圣戈本陶瓷及塑料股份有限公司 用于进行材料去除操作的流体组合物及方法
US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277355A (en) * 1979-09-28 1981-07-07 Alexander Farcnik Insulative fireproof textured coating
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH09306881A (ja) * 1996-05-15 1997-11-28 Kobe Steel Ltd シリコン用研磨液組成物および研磨方法
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
JP2001144042A (ja) * 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属研磨方法
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2004276219A (ja) * 2003-03-18 2004-10-07 Ebara Corp 電解加工液、電解加工装置及び配線加工方法
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Also Published As

Publication number Publication date
KR20080035699A (ko) 2008-04-23
IL189504A (en) 2012-12-31
CN101263209B (zh) 2011-07-13
TW200730298A (en) 2007-08-16
IL189504A0 (en) 2008-08-07
WO2007021716A3 (en) 2007-06-07
US20070039926A1 (en) 2007-02-22
WO2007021716A2 (en) 2007-02-22
TWI343296B (en) 2011-06-11
SG178632A1 (en) 2012-03-29
MY146300A (en) 2012-07-31
EP1924666B1 (en) 2011-10-12
EP1924666A2 (en) 2008-05-28
CN101263209A (zh) 2008-09-10
JP2009505423A (ja) 2009-02-05
ATE528364T1 (de) 2011-10-15
KR101109334B1 (ko) 2012-01-31

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