KR101109334B1 - 연마제 없는 연마 시스템 - Google Patents

연마제 없는 연마 시스템 Download PDF

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Publication number
KR101109334B1
KR101109334B1 KR1020087006318A KR20087006318A KR101109334B1 KR 101109334 B1 KR101109334 B1 KR 101109334B1 KR 1020087006318 A KR1020087006318 A KR 1020087006318A KR 20087006318 A KR20087006318 A KR 20087006318A KR 101109334 B1 KR101109334 B1 KR 101109334B1
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KR
South Korea
Prior art keywords
polishing
substrate
potassium
polishing system
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020087006318A
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English (en)
Korean (ko)
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KR20080035699A (ko
Inventor
아이삭 체리안
케빈 뫼겐보르그
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20080035699A publication Critical patent/KR20080035699A/ko
Application granted granted Critical
Publication of KR101109334B1 publication Critical patent/KR101109334B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087006318A 2005-08-17 2006-08-09 연마제 없는 연마 시스템 Expired - Fee Related KR101109334B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/205,428 2005-08-17
US11/205,428 US20070039926A1 (en) 2005-08-17 2005-08-17 Abrasive-free polishing system
PCT/US2006/030982 WO2007021716A2 (en) 2005-08-17 2006-08-09 Abrasive-free polishing system

Publications (2)

Publication Number Publication Date
KR20080035699A KR20080035699A (ko) 2008-04-23
KR101109334B1 true KR101109334B1 (ko) 2012-01-31

Family

ID=37499371

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087006318A Expired - Fee Related KR101109334B1 (ko) 2005-08-17 2006-08-09 연마제 없는 연마 시스템

Country Status (11)

Country Link
US (1) US20070039926A1 (enExample)
EP (1) EP1924666B1 (enExample)
JP (1) JP5144516B2 (enExample)
KR (1) KR101109334B1 (enExample)
CN (1) CN101263209B (enExample)
AT (1) ATE528364T1 (enExample)
IL (1) IL189504A (enExample)
MY (1) MY146300A (enExample)
SG (1) SG178632A1 (enExample)
TW (1) TWI343296B (enExample)
WO (1) WO2007021716A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
DE112012001891B4 (de) * 2011-04-26 2016-09-15 Asahi Glass Company, Limited Verfahren zum Polieren eines nicht-Oxid-Einkristallsubstrats
JP5716838B2 (ja) * 2011-10-07 2015-05-13 旭硝子株式会社 研磨液
US11319460B2 (en) * 2017-03-23 2022-05-03 Fujimi Incorporated Polishing composition
CN114286846B (zh) * 2019-08-30 2023-06-06 圣戈本陶瓷及塑料股份有限公司 用于进行材料去除操作的流体组合物及方法
US11499072B2 (en) 2019-08-30 2022-11-15 Saint-Gobain Ceramics & Plastics, Inc. Composition and method for conducting a material removing operation
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277355A (en) * 1979-09-28 1981-07-07 Alexander Farcnik Insulative fireproof textured coating
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH09306881A (ja) * 1996-05-15 1997-11-28 Kobe Steel Ltd シリコン用研磨液組成物および研磨方法
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
JP2001144042A (ja) * 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属研磨方法
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2004276219A (ja) * 2003-03-18 2004-10-07 Ebara Corp 電解加工液、電解加工装置及び配線加工方法
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing

Also Published As

Publication number Publication date
KR20080035699A (ko) 2008-04-23
IL189504A (en) 2012-12-31
CN101263209B (zh) 2011-07-13
TW200730298A (en) 2007-08-16
IL189504A0 (en) 2008-08-07
JP5144516B2 (ja) 2013-02-13
WO2007021716A3 (en) 2007-06-07
US20070039926A1 (en) 2007-02-22
WO2007021716A2 (en) 2007-02-22
TWI343296B (en) 2011-06-11
SG178632A1 (en) 2012-03-29
MY146300A (en) 2012-07-31
EP1924666B1 (en) 2011-10-12
EP1924666A2 (en) 2008-05-28
CN101263209A (zh) 2008-09-10
JP2009505423A (ja) 2009-02-05
ATE528364T1 (de) 2011-10-15

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