JP5132023B2 - 電子ビーム物理蒸着被覆装置と該装置用の観察ポート - Google Patents

電子ビーム物理蒸着被覆装置と該装置用の観察ポート Download PDF

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Publication number
JP5132023B2
JP5132023B2 JP2001555910A JP2001555910A JP5132023B2 JP 5132023 B2 JP5132023 B2 JP 5132023B2 JP 2001555910 A JP2001555910 A JP 2001555910A JP 2001555910 A JP2001555910 A JP 2001555910A JP 5132023 B2 JP5132023 B2 JP 5132023B2
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JP
Japan
Prior art keywords
coating
electron beam
chamber
coating chamber
observation port
Prior art date
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Expired - Fee Related
Application number
JP2001555910A
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English (en)
Japanese (ja)
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JP2003521584A (ja
JP2003521584A5 (de
Inventor
ブルース，ロバート・ウィリアム
エバンス，ジョン・ダグラス，シニア
マリコッチ，アントニオ・フランク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
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Publication date
Application filed by General Electric Co filed Critical General Electric Co
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Publication of JP2003521584A5 publication Critical patent/JP2003521584A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
JP2001555910A 1999-08-04 2000-08-03 電子ビーム物理蒸着被覆装置と該装置用の観察ポート Expired - Fee Related JP5132023B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14723399P 1999-08-04 1999-08-04
US60/147,233 1999-08-04
US62175700A 2000-07-24 2000-07-24
US09/621,757 2000-07-24
PCT/US2000/021175 WO2001057288A1 (en) 1999-08-04 2000-08-03 Electron beam physical vapor deposition apparatus and viewport therefor

Publications (3)

Publication Number Publication Date
JP2003521584A JP2003521584A (ja) 2003-07-15
JP2003521584A5 JP2003521584A5 (de) 2012-04-12
JP5132023B2 true JP5132023B2 (ja) 2013-01-30

Family

ID=26844718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001555910A Expired - Fee Related JP5132023B2 (ja) 1999-08-04 2000-08-03 電子ビーム物理蒸着被覆装置と該装置用の観察ポート

Country Status (4)

Country Link
EP (1) EP1198608A1 (de)
JP (1) JP5132023B2 (de)
UA (1) UA71573C2 (de)
WO (1) WO2001057288A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8709160B2 (en) 2008-08-22 2014-04-29 United Technologies Corporation Deposition apparatus having thermal hood
US20100104773A1 (en) * 2008-10-24 2010-04-29 Neal James W Method for use in a coating process
US8343591B2 (en) * 2008-10-24 2013-01-01 United Technologies Corporation Method for use with a coating process
JP2011003464A (ja) * 2009-06-19 2011-01-06 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理装置用冷却装置
US9581042B2 (en) 2012-10-30 2017-02-28 United Technologies Corporation Composite article having metal-containing layer with phase-specific seed particles and method therefor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797684B2 (ja) 1987-07-08 1995-10-18 理化学研究所 常温型多重反射セル
US4866239A (en) 1988-05-31 1989-09-12 The Boc Group, Inc. Vapor source assembly with crucible
JPH02294479A (ja) * 1989-05-10 1990-12-05 Sumitomo Electric Ind Ltd 線材の連続真空処理装置
JP3056222B2 (ja) * 1989-10-26 2000-06-26 東京エレクトロン株式会社 スパッタ装置およびスパッタ方法
DE4137414C2 (de) * 1991-11-14 1995-06-14 Leybold Ag Vorrichtung zum Beobachten von Prozeßabläufen
JPH0830261B2 (ja) * 1993-07-05 1996-03-27 日本電気株式会社 真空装置の回転動力伝達機構
JPH0762527A (ja) * 1993-08-23 1995-03-07 Toyota Motor Corp レーザｐｖｄ装置
JPH0797684A (ja) * 1993-09-30 1995-04-11 Kao Corp 薄膜形成装置
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
JPH08134643A (ja) * 1994-11-11 1996-05-28 Laser Noshuku Gijutsu Kenkyu Kumiai 観測窓への蒸気付着防止装置
US5698273A (en) * 1995-11-24 1997-12-16 General Electric Company Electron beam physical vapor deposition method
WO1997046729A1 (de) * 1996-05-30 1997-12-11 Siemens Aktiengesellschaft Beschichtungsvorrichtung und verfahren zur beschichtung eines bauteils mit einer wärmedämmschicht
JPH10280134A (ja) * 1997-04-10 1998-10-20 Toshiba Corp セラミックス被覆部材の製造装置およびその製造方法

Also Published As

Publication number Publication date
EP1198608A1 (de) 2002-04-24
WO2001057288A1 (en) 2001-08-09
JP2003521584A (ja) 2003-07-15
UA71573C2 (uk) 2004-12-15

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