JP5130589B2 - 半導体装置の製造方法および酸化処理装置 - Google Patents

半導体装置の製造方法および酸化処理装置 Download PDF

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JP5130589B2
JP5130589B2 JP2009076054A JP2009076054A JP5130589B2 JP 5130589 B2 JP5130589 B2 JP 5130589B2 JP 2009076054 A JP2009076054 A JP 2009076054A JP 2009076054 A JP2009076054 A JP 2009076054A JP 5130589 B2 JP5130589 B2 JP 5130589B2
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substrate
radicals
oxidation
oxide film
semiconductor device
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JP2010232280A5 (enExample
JP2010232280A (ja
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和雅 河瀬
学 生沼
成久 三浦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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JP2009076054A 2009-03-26 2009-03-26 半導体装置の製造方法および酸化処理装置 Active JP5130589B2 (ja)

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JP2010232280A5 JP2010232280A5 (enExample) 2011-12-01
JP5130589B2 true JP5130589B2 (ja) 2013-01-30

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Publication number Priority date Publication date Assignee Title
JP6550962B2 (ja) * 2015-06-24 2019-07-31 株式会社デンソー 炭化珪素半導体のエピタキシャル成長装置
KR102758455B1 (ko) * 2023-01-19 2025-01-22 (주)이큐테크플러스 고온 산화 공정 시 계면의 결함 증가를 최소화 하는 박막의 생성 방법

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DE19524214A1 (de) * 1995-07-03 1997-01-09 Abb Research Ltd Elektrofilter
JPH11145131A (ja) * 1997-03-18 1999-05-28 Toshiba Corp 半導体装置の製造方法及び半導体製造装置、及び半導体装置
JP4376496B2 (ja) * 2001-11-08 2009-12-02 株式会社明電舎 酸化膜形成方法及びその装置

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