JP5127099B2 - 電子装置、表示装置 - Google Patents

電子装置、表示装置 Download PDF

Info

Publication number
JP5127099B2
JP5127099B2 JP2001125754A JP2001125754A JP5127099B2 JP 5127099 B2 JP5127099 B2 JP 5127099B2 JP 2001125754 A JP2001125754 A JP 2001125754A JP 2001125754 A JP2001125754 A JP 2001125754A JP 5127099 B2 JP5127099 B2 JP 5127099B2
Authority
JP
Japan
Prior art keywords
transistor
gate
tft
signal line
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001125754A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002014653A5 (enrdf_load_stackoverflow
JP2002014653A (ja
Inventor
肇 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001125754A priority Critical patent/JP5127099B2/ja
Publication of JP2002014653A publication Critical patent/JP2002014653A/ja
Publication of JP2002014653A5 publication Critical patent/JP2002014653A5/ja
Application granted granted Critical
Publication of JP5127099B2 publication Critical patent/JP5127099B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001125754A 2000-04-26 2001-04-24 電子装置、表示装置 Expired - Fee Related JP5127099B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001125754A JP5127099B2 (ja) 2000-04-26 2001-04-24 電子装置、表示装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000125993 2000-04-26
JP2000125993 2000-04-26
JP2000-125993 2000-04-26
JP2001125754A JP5127099B2 (ja) 2000-04-26 2001-04-24 電子装置、表示装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011038124A Division JP5178859B2 (ja) 2000-04-26 2011-02-24 電子装置、表示装置
JP2011218900A Division JP5358641B2 (ja) 2000-04-26 2011-10-03 表示装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2002014653A JP2002014653A (ja) 2002-01-18
JP2002014653A5 JP2002014653A5 (enrdf_load_stackoverflow) 2008-04-03
JP5127099B2 true JP5127099B2 (ja) 2013-01-23

Family

ID=26590854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001125754A Expired - Fee Related JP5127099B2 (ja) 2000-04-26 2001-04-24 電子装置、表示装置

Country Status (1)

Country Link
JP (1) JP5127099B2 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041354A (ja) * 2000-04-26 2014-03-06 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
KR20160036418A (ko) * 2014-09-25 2016-04-04 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2003323157A (ja) * 2002-02-28 2003-11-14 Semiconductor Energy Lab Co Ltd 発光装置の駆動方法及び電子機器
KR101037118B1 (ko) * 2002-04-03 2011-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
KR100906964B1 (ko) * 2002-09-25 2009-07-08 삼성전자주식회사 유기 전계발광 구동 소자와 이를 갖는 유기 전계발광 표시패널
AU2003269500A1 (en) 2002-10-21 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
KR100993042B1 (ko) 2003-12-29 2010-11-10 엘지디스플레이 주식회사 일렉트로 루미네센스 패널 및 그 구동방법
US8159478B2 (en) 2004-09-27 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP4999351B2 (ja) * 2005-04-20 2012-08-15 株式会社半導体エネルギー研究所 半導体装置及び表示装置
KR101209041B1 (ko) 2005-11-25 2012-12-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR100804639B1 (ko) * 2005-11-28 2008-02-21 삼성전자주식회사 디스플레이 장치 구동 방법
US7847793B2 (en) 2005-12-08 2010-12-07 Semiconductor Energy Laboratory Co., Ltd. Control circuit of display device, and display device and electronic appliance incorporating the same
US8081361B2 (en) 2007-04-11 2011-12-20 Carbon Design Innovations, Inc. Carbon nanotube signal modulator and photonic transmission device
KR101274710B1 (ko) * 2008-07-10 2013-06-12 엘지디스플레이 주식회사 유기발광다이오드 표시장치
JP2009151315A (ja) * 2008-12-25 2009-07-09 Toshiba Mobile Display Co Ltd Ｅｌ表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242941B2 (ja) * 1991-04-30 2001-12-25 富士ゼロックス株式会社 アクティブｅｌマトリックスおよびその駆動方法
JP4114216B2 (ja) * 1997-05-29 2008-07-09 カシオ計算機株式会社 表示装置及びその駆動方法
US5952789A (en) * 1997-04-14 1999-09-14 Sarnoff Corporation Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor
JP3686769B2 (ja) * 1999-01-29 2005-08-24 日本電気株式会社 有機ｅｌ素子駆動装置と駆動方法
JP3353731B2 (ja) * 1999-02-16 2002-12-03 日本電気株式会社 有機エレクトロルミネッセンス素子駆動装置
JP3259774B2 (ja) * 1999-06-09 2002-02-25 日本電気株式会社 画像表示方法および装置
JP4092857B2 (ja) * 1999-06-17 2008-05-28 ソニー株式会社 画像表示装置
JP2001042822A (ja) * 1999-08-03 2001-02-16 Pioneer Electronic Corp アクティブマトリクス型表示装置
TW525122B (en) * 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
TW493152B (en) * 1999-12-24 2002-07-01 Semiconductor Energy Lab Electronic device
JP4869491B2 (ja) * 2000-04-18 2012-02-08 株式会社半導体エネルギー研究所 発光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041354A (ja) * 2000-04-26 2014-03-06 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
KR20160036418A (ko) * 2014-09-25 2016-04-04 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법
KR102262567B1 (ko) * 2014-09-25 2021-06-07 엘지디스플레이 주식회사 유기전계 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
JP2002014653A (ja) 2002-01-18

Similar Documents

Publication Publication Date Title
JP6651587B2 (ja) 表示装置
JP6474433B2 (ja) 表示装置
JP6603680B2 (ja) 発光装置
JP4954380B2 (ja) 発光装置、半導体装置
JP4963145B2 (ja) 電子装置及び電子機器
JP5127099B2 (ja) 電子装置、表示装置
JP4798865B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080214

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121023

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121030

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5127099

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151109

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees