JP5125357B2 - Manufacturing method of electro-optical device - Google Patents

Description

  The present invention relates to a method for manufacturing an electro-optical device such as a liquid crystal device, an electro-optical device manufactured by the method, and a projection display device including the electro-optical device.

  In the electro-optical device, a grid-like light shielding region extending vertically and horizontally is provided for the purpose of securing a wiring region and preventing color mixing, and modulated light is emitted from a pixel opening region surrounded by the light shielding region. For example, as shown in FIG. 12A, a liquid crystal device, which is a typical electro-optical device, includes an element substrate 10 on which pixel electrodes are formed, a counter substrate 20 disposed opposite to the element substrate 10, and an element A liquid crystal layer 50 held between the substrate 10 and the counter substrate 20 is provided. In the element substrate 10, a region 14 in which wiring and pixel switching transistors are formed, and in the counter substrate 20, a black matrix and a black stripe are provided. A light shielding region 100c is defined by a region where the light shielding layer 24, which is referred to as “a”, is formed. Inside the light shielding region 100c is a pixel opening region 100d having a pixel electrode. The liquid crystal device configured as described above is configured such that light incident from the element substrate 10 side is modulated by the liquid crystal layer 50 and then emitted from the counter substrate 20, or light incident from the counter substrate 20 side is liquid crystal layer. Since the light is modulated by 50 and then emitted from the element substrate 10, in order to efficiently use the incident light, it is necessary to efficiently guide the incident light to the pixel opening region 100d.

Therefore, in a liquid crystal device having a structure in which light incident from the counter substrate 20 side is modulated by the liquid crystal layer 50 and then emitted from the element substrate 10, FIGS. 12A and 12B are performed by dry etching or laser etching. As shown in FIG. 12B, a deflection groove 264 having a V-shaped cross section provided with a reflective slope 265 for guiding incident light to the pixel opening region 100d in a region overlapping the light shielding region 100c on the counter substrate 20 side (FIG. 12B). It has been proposed to use a deflection substrate 20e formed vertically and horizontally (indicated by a slanting line slanting downward in FIG. 1) (see Patent Document 1).
JP 2006-215427 A

  However, when the deflection groove 264 as shown in FIGS. 12A and 12B is formed, if the method described in Patent Document 1 is adopted, the productivity is extremely low, and the angle of the inclined surface 265 of the deflection groove 264, etc. There is a problem that variations tend to occur. That is, in the method described in Patent Document 1, as shown in FIG. 13A, the resist mask 60 having the opening 61 corresponding to the etching target region for forming the deflection groove 264 is used as the deflection substrate 20e. Then, dry etching is performed on the substrate surface of the deflection substrate 20e and the resist mask 60 to form a deflection groove 264 having a V-shaped cross section as shown in FIG. Next, in a state in which the deflection groove 264 is filled with a resin material having a refractive index lower than that of the deflection substrate 20e or a low refractive index material 263 such as air, the cover substrate 20y is bonded to the substrate surface of the deflection substrate 20e via the adhesive 20x. Then, the light shielding layer 24 and the common electrode 21 are sequentially formed on the surface of the cover substrate 20y to obtain the counter substrate 20.

  Here, since the deflection groove 264 has a considerable depth, if such a deep deflection groove 264 is formed by dry etching, an extremely long etching process is required. Also, when forming the deep deflection groove 264 by laser etching, an extremely long etching process is required.

  In view of the above problems, an object of the present invention is to efficiently manufacture a deflecting substrate on which a V-shaped deflecting section having a reflective slope for guiding incident light to a pixel opening region is formed. Another object of the present invention is to provide an electro-optical device manufacturing method with high accuracy of the tilt angle of the reflective slope, an electro-optical device manufactured by such a method, and a projection display device including the electro-optical device.

In order to solve the above problems, in the present invention, in the method for manufacturing an electro-optical device having a board in which a pair of inclined surfaces have been made form of V-shaped cross section for guiding incident light to the pixel opening region, translucent A transfer layer forming step of forming a translucent transfer layer on the substrate, and a molding surface provided with projections and depressions on the mold member is pressed to transfer the inverted pattern of the projections and depressions onto the transfer layer, and the cross section is V-shaped. A transfer step for forming a pair of slopes in the shape and a reflectivity imparting step for imparting reflectivity to the pair of slopes are performed.

  In the present invention, in forming the V-shaped cross section for guiding the light toward the pixel opening region with the inclined surface facing the side on which the light to be modulated is incident, the translucency that is the base material of the deflection substrate is formed. After forming the translucent transferred layer on the substrate, the mold member is pressed with a molding surface having irregularities corresponding to the shape of the deflecting portion to transfer the inverted pattern of the irregularities to the transferred layer, and Form a slope. For this reason, since it is not necessary to form the inclined surface of the deflection substrate by etching, the deflection substrate can be efficiently manufactured, and the inclination angle of the deflection portion is high and the variation does not occur. .

  In the present invention, the deflection section is a deflection protrusion having a V-shaped cross section that is pointed toward the side on which light to be modulated is incident, and the mold member has a V-shaped groove corresponding to the deflection protrusion. In the step of imparting reflectivity, a method of forming a high refractive index layer or a light reflective material layer having a refractive index higher than that of the transferred layer so as to cover the inclined surface of the deflection protrusion is adopted. can do.

  In the present invention, the deflection unit is a deflection groove having a V-shaped cross section that is recessed toward a side on which light to be modulated is incident, and the mold member has a V-shaped projection corresponding to the deflection groove. In the reflectivity imparting step, a method of forming a low refractive index layer or a light reflective material layer having a refractive index lower than that of the transferred layer so as to cover the inclined surface in the deflection groove. Can be adopted.

  In the present invention, the transfer layer is made of, for example, a resin material or a low-melting glass material.

  With reference to the drawings, a projection display device using an electro-optical device (liquid crystal device) to which the present invention is applied, an electro-optical device, and a method for manufacturing the electro-optical device will be described. For the purpose of clarifying the correspondence, in the following description, parts having the same functions as those described with reference to FIGS. 12 and 13 are given the same reference numerals. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing.

[Embodiment 1]
(Configuration of projection display device)
With reference to FIG. 1, a projection display device using the electro-optical device according to the first embodiment of the present invention as a light valve will be described. FIG. 1 is a schematic configuration diagram of a projection display device to which the present invention is applied.

  The projection display device 110 shown in FIG. 1 irradiates light on a screen 111 (projected surface) provided on the viewer side, and observes the light reflected by the screen 111. The projection display apparatus 110 includes a light source unit 140 including a light source 112, dichroic mirrors 113 and 114, a relay system 120, liquid crystal light valves 115 to 117, a cross dichroic prism 119 (combining optical system), and projection optics. System 118.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among green light and blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to make the illuminance distribution of the light emitted from the light source 112 uniform. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive electro-optical device (liquid crystal device) that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflecting mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 115 is configured to modulate the red light according to the image signal and emit the modulated red light toward the cross dichroic prism 119.

  The λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive electro-optical device (liquid crystal device) that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similar to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with an image signal and emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive electro-optical device (liquid crystal device) that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then passed through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 phase difference plate 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. The second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate the blue light according to the image signal and emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are arranged in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be effectively combined. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. For this reason, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

  In the projection display device 110 configured as described above, since the use efficiency of the light emitted from the light source 112 is required to be high, the configuration described below is adopted for the liquid crystal devices as the liquid crystal light valves 115 to 117. Has been.

(Overall configuration of electro-optical device)
FIGS. 2A and 2B are explanatory views schematically showing the configuration of a liquid crystal panel used for a liquid crystal light valve (electro-optical device / liquid crystal device) in the projection display device shown in FIG. It is a block diagram which shows the electric constitution of an apparatus. Note that the liquid crystal light valves 115 to 117 and the liquid crystal panels 115 c to 117 c shown in FIG. 1 differ only in the wavelength range of light to be modulated, and have the same basic configuration, so that the liquid crystal light valves 115 to 117 are connected to the liquid crystal device 100. The liquid crystal panels 115c to 117c will be described as the liquid crystal panel 100x.

  As shown in FIG. 2A, in the liquid crystal device 100, the liquid crystal panel 100x includes an element substrate 10 and a counter substrate 20 facing the element substrate 10, and light incident from the counter substrate 20 side. This is a transmissive liquid crystal panel that modulates the light and emits light from the element substrate 10 side. The element substrate 10 and the counter substrate 20 are bonded to each other via a sealing material (not shown), and a liquid crystal layer 50 made of TN (Twisted Nematic) liquid crystal or the like is held in an inner region of the sealing material. ing. Although details will be described later, island-like pixel electrodes 9a and the like are formed on the surface of the element substrate 10 facing the counter substrate 20, and the surface of the counter substrate 20 facing the element substrate 10 is formed on substantially the entire surface thereof. A common electrode 21 is formed.

  As shown in FIG. 2B, in the element substrate 10 of the liquid crystal device 100, the pixel electrode 9a and the pixel electrode 9a are subjected to switching control in each of the plurality of matrix-like pixels 100a constituting the image display region 10a. For this purpose, a MOS field effect transistor 30 is formed as a pixel transistor. In the image display area 10a, a plurality of data lines 6a for supplying image signals and a plurality of scanning lines 3a for supplying scanning signals extend in directions intersecting with each other. Connected to the data line driving circuit 101, the scanning line 3 a is connected to the scanning line driving circuit 104. The data line 6 a is connected to the source of the field effect transistor 30, and the scanning line 3 a is connected to the gate of the field effect transistor 30. The pixel electrode 9a is electrically connected to the drain of the field effect transistor 30. By turning on the field effect transistor 30 for a certain period, a data signal supplied from the data line 6a is supplied to each pixel. Write to 100a at a predetermined timing. Then, a pixel signal of a predetermined level written in the liquid crystal capacitor 50a formed by the pixel electrode 9a, the liquid crystal layer 50, and the common electrode 21 shown in FIG. 2A is held for a certain period.

  Here, a storage capacitor 55 is formed in parallel with the liquid crystal capacitor 50a, and the voltage of the pixel electrode 9a is held by the storage capacitor 55 for a time that is, for example, three orders of magnitude longer than the time when the source voltage is applied. . Thereby, the charge retention characteristic is improved, and the liquid crystal device 100 capable of performing display with a high contrast ratio can be realized. In this embodiment, in order to configure the storage capacitor 55, a capacitor line 5b is formed in parallel with the scanning line 3a, and the capacitor line 5b is connected to a common potential line (COM) and held at a predetermined potential. Has been. Note that the storage capacitor 55 may be formed between the previous scanning line 3a.

(Specific pixel configuration)
FIG. 3 is a cross-sectional view of one pixel of a liquid crystal device to which the present invention is applied. 4A and 4B are respectively a plan view of adjacent pixels in an element substrate used in a liquid crystal device to which the present invention is applied, and an explanation in which a light-shielding region on the element substrate is indicated by a diagonal line rising to the right. FIG. 3 corresponds to a cross-sectional view when the liquid crystal device 100 is cut at a position corresponding to the line AA ′ in FIG. 4A and 4B, the semiconductor layer is indicated by a thin and short dotted line, the scanning line 3a is indicated by a thick solid line, the data line 6a and a thin film formed simultaneously with it are indicated by an alternate long and short dash line, Reference numeral 5b indicates a two-dot chain line, the pixel electrode 9a and a thin film formed simultaneously with the pixel electrode 9a are indicated by a thick and long dotted line, and a relay electrode described later is indicated by a thin solid line.

  As shown in FIG. 3 and FIG. 4A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and along the vertical and horizontal boundaries of each pixel electrode 9a. Thus, the data line 6a and the scanning line 3a are formed. Each of the data line 6a and the scanning line 3a extends linearly. A field effect transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the element substrate 10, a capacitor line 5b is formed so as to overlap the scanning line 3a. In this embodiment, the capacitor line 5b includes a main line portion extending linearly so as to overlap the scanning line 3a, and a sub-line portion extending so as to overlap the data line 6a at the intersection of the data line 6a and the scanning line 3a. It has.

  The element substrate 10 includes a support substrate 11 (substrate body) made of a light-transmitting material such as a quartz substrate or a glass substrate, a pixel electrode 9a formed on the surface of the liquid crystal layer 50, and a field effect transistor 30 for pixel switching. The counter substrate 20 is mainly composed of a deflection substrate 20b described later, a common electrode 21 formed on the surface of the liquid crystal layer 50, and an alignment film 29. .

  In the element substrate 10, a field effect transistor 30 is formed at a position adjacent to the pixel electrode 9a. The field effect transistor 30 has, for example, an LDD (Lightly Doped Drain) structure. The semiconductor layer 1 a has a channel region 1 a ′ facing the scanning line 3 a through the gate insulating layer 2, a low concentration. A source region 1b, a low concentration drain region 1c, a high concentration source region 1d, and a high concentration drain region 1e are formed.

  The semiconductor layer 1a is constituted by a single crystal silicon layer formed on a support substrate 11 made of, for example, a quartz substrate via a base insulating film 12, and the element substrate 10 having such a configuration includes a quartz substrate and a single crystal silicon. This can be realized by using an SOI (Silicon On Insulator) substrate in which the substrate is bonded through an insulating layer. Such an SOI substrate is formed by, for example, a method in which a silicon oxide film is formed on a single crystal silicon substrate and bonded to a quartz substrate, or a silicon oxide film is formed on both a quartz substrate and a single crystal silicon substrate and then silicon. A method in which the oxide films are brought into contact with each other and bonded can be employed. When such a substrate is used, the gate insulating layer 2 (second insulating film) can be formed by a thermal oxide film for the semiconductor layer 1a. For the scanning line 3a, a silicon film such as polysilicon, amorphous silicon, or a single crystal silicon film, a polycide or a silicide thereof, or a metal film is used.

  On the upper layer side of the scanning line 3a, a first interlayer insulating film 41 made of a silicon oxide film or the like having a contact hole 82 leading to the high concentration source region 1d and a contact hole 83 leading to the high concentration drain region 1e is formed. Yes. Relay electrodes 4 a and 4 b are formed on the first interlayer insulating film 41. The relay electrode 4a is formed in a substantially L shape extending along the scan line 3a and the data line 6a with the position where the scan line 3a and the data line 6a intersect as a base point. The relay electrode 4b It is formed along the data line 6a at a position separated from 4b. The relay electrode 4a is electrically connected to the high-concentration drain region 1e through the contact hole 83, and the relay electrode 4b is electrically connected to the high-concentration source region 1d through the contact hole 82.

  A dielectric film 42 made of a silicon nitride film or the like is formed on the upper layer side of the relay electrodes 4a and 4b, and a capacitor line 5b is formed through the dielectric film 42 so as to face the relay electrode 4a. A storage capacitor 55 is formed. The relay electrodes 4a and 4b are made of a conductive polysilicon film, a metal film, or the like, and the capacitor line 5b is made of a conductive polysilicon film, a metal silicide film containing a refractory metal, a laminated film thereof, or a metal film.

  On the upper layer side of the capacitor line 5b, a second interlayer insulating film 43 made of a silicon oxide film having a contact hole 87 leading to the relay electrode 4a and a contact hole 81 leading to the relay electrode 4b is formed. A data line 6 a and a drain electrode 6 b are formed on the second interlayer insulating film 43. The data line 6a is electrically connected to the relay electrode 4b through the contact hole 81, and is electrically connected to the high concentration source region 1d through the relay electrode 4b. The drain electrode 6b is electrically connected to the relay electrode 4a through the contact hole 87, and is electrically connected to the high concentration drain region 1e through the relay electrode 4a. The data line 6a and the drain electrode 6b are made of a conductive polysilicon film, a metal silicide film containing a refractory metal, a laminated film thereof, and a metal film.

  A third interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. In the third interlayer insulating film 44, a contact hole 86 that leads to the drain electrode 6b is formed.

  A transparent pixel electrode 9 a made of an ITO (Indium Tin Oxide) film or the like is formed on the third interlayer insulating film 44. The pixel electrode 9 a is electrically connected to the drain electrode 6 b through the contact hole 86. Connected. An alignment film 16 is formed on the surface of the pixel electrode 9a.

  In contrast, in the counter substrate 20, the common electrode 21 and the alignment film 29 are formed on the surface of the deflecting substrate 20 b that faces the element substrate 10.

  In the liquid crystal device 100 configured as described above, a lattice-shaped light shielding region 100c that does not contribute linearly to display due to the formation region of the scanning line 3a, the capacitor line 5b, the data line 6a, and the field effect transistor 30 (FIG. 4B). Are formed in the first direction (indicated by the arrow X) and the second direction (indicated by the arrow Y) intersecting each other. A region surrounded by the light shielding region 100c is a pixel opening region 100d that emits modulated light and contributes directly to display. In this embodiment, the counter substrate 20 is not formed with a light shielding film called a so-called black matrix or black stripe. For this reason, the light shielding region 100c is defined by the formation region of the scanning line 3a, the capacitor line 5b, the data line 6a, and the field effect transistor 30.

(Configuration of deflection substrate 20b)
5 (a) and 5 (b) are explanatory diagrams schematically showing a cross-sectional configuration of the deflection substrate by schematically showing a cross section of the liquid crystal device according to the first embodiment of the present invention, and a deflection unit of the deflection substrate. It is explanatory drawing which shows a plane structure. In FIG. 5A, the alignment film 16 and the like on the element substrate 10 side are not shown.

  As shown in FIGS. 5A and 5B, in the liquid crystal device 100 of the present embodiment, light incident from the counter substrate 20 side is modulated for each pixel by the liquid crystal layer 50 and then emitted from the element substrate 10. To do. For this reason, in order to efficiently use the incident light, it is necessary to efficiently guide the incident light to the pixel opening region 100d. Therefore, in this embodiment, the deflection substrate 20b is used as the counter substrate 20, and the deflection substrate 20b guides the light toward the pixel opening region 100d with the inclined surface facing the side on which the light to be modulated is incident. A deflecting portion 26 having a V-shaped cross section is formed along a region overlapping the light shielding region 100c.

  More specifically, in the deflection substrate 20b, the surface 20g (the side opposite to the side where the liquid crystal layer 50 is located) on the side where the light to be modulated of the translucent substrate 20f which is the base material is incident is, A translucent transfer layer 20h made of a resin material such as epoxy resin or acrylic resin, or low-melting glass is formed, and the transfer layer 20h is pointed toward the side on which light to be modulated is incident. A deflection protrusion 261 having a V-shaped cross section is formed. Further, on the surface 20g side of the translucent substrate 20f, a high refractive index layer 20i having a refractive index higher than that of the transferred layer 20h is formed so as to completely cover the transferred layer 20h. 262 is covered with a high refractive index layer 20i. In the high refractive index layer 20i, the surface 20j on the side where the light to be modulated is incident is a flat surface.

  In this embodiment, the high refractive index layer 20i is made of a material selected from high refractive materials such as a silicon nitride film and a metal oxide film according to the refractive index of the material constituting the transferred layer 20h, and is reflected on the inclined surface 262. Has been given sex.

That is, the refractive index of the material constituting the high refractive index layer 20 i is n ₁₁ , the refractive index of the material constituting the transferred layer 20 h is n _12, and the incident angle of light with respect to the normal line of the inclined surface 262 is θ ₀ . In this case, n ₁₁ > n ₁₂ and n ₁₁ , n ₁₂ , θ ₀ are the following expressions: sin θ ₀ > n ₁₂ / n ₁₁
If this condition is satisfied, total reflection occurs, so that the slope 262 can be provided with reflectivity.

  In the translucent substrate 20f, the surface 20k on the side where the liquid crystal layer 50 is located is a smooth surface, on which the counter electrode 21 and the alignment film 29 are formed.

(Operational effect of the deflection substrate 20b)
In the liquid crystal device 100 configured as described above, light having various incident angles is incident from the light source unit 140 described with reference to FIG. 1, and light traveling toward the pixel opening region 100d among the incident light is indicated by an arrow L1. As shown by arrow L2, while the light travels as it is, as shown by the arrow L2, the reflective slope 262 of the deflecting section 26 is directed toward the light deviating from the direction toward the pixel opening region 100d, as shown by the arrow L3. And is directed toward the pixel opening region 100d.

  Here, the deflection unit 26 includes a deflection projection 261 having a substantially isosceles triangular cross section with the inclined surface 262 as one side, and the apex of the triangular shape is located at the center of the light shielding region 100c in the width direction. Further, the width dimension (the length of the base of the triangular shape) of the deflection unit 26 (deflection protrusion 261) is set to be approximately the same as or slightly wider than the width dimension of the light shielding region 100c. Light that travels in a direction away from the direction toward 100d can also be used effectively. Note that the inclination of the inclined surface 262 is set so that, for example, the angle formed with the normal to the substrate surface of the translucent substrate 20f is 3 ° or less, as disclosed in Japanese Patent Application Laid-Open No. 2006-215427. The According to this configuration, when the light is reflected by the inclined surface 262, the incident light can be deflected while reducing the increase in the light beam angle, and the incident light is converted into, for example, a projection optical system having an F number of 2.5. (See FIG. 1) can be converted into light having a light beam angle that can be sufficiently captured, and the contrast can be improved and the utilization efficiency of incident light can be improved.

(Manufacturing method of the deflection substrate 20b and the counter substrate 20)
With reference to FIG. 6, the manufacturing process of the deflection | deviation board | substrate 20b and the opposing board | substrate 20 is demonstrated among the manufacturing processes of the liquid crystal device 100 of this form. FIG. 6 is a process sectional view showing a manufacturing process of the deflection substrate 20b and the counter substrate 20 used in the liquid crystal device 100 of the present embodiment.

  In order to manufacture the deflection substrate 20b and the counter substrate 20 of this embodiment, first, a transfer mold member 61 is formed by the steps shown in FIGS. 6 (a) and 6 (b). For this purpose, as shown in FIG. 6A, after preparing a plate material 610 made of a metal substrate such as a silicon substrate, a quartz substrate, or nickel as a base material of the mold member 61, using a photolithography technique, On one surface 611, a resist mask 62 having a thickness of 50 to 200 μm is formed. Next, dry etching is performed on the plate material 610. For such dry etching, an ICP dry etching apparatus capable of forming high-density plasma is used, and the etching selectivity between the plate material 610 and the resist mask 62 is set to 4: 1, for example. As a result, as shown in FIG. 6B, a groove 612 having a V-shaped cross section having a depth approximately four times the thickness of the resist mask 62 is formed. In this way, the mold member 61 having the groove 612 having a V-shaped cross section on the molding surface 613 can be obtained. The shape of the groove 612 is the same as that of the deflection protrusion 261 described with reference to FIG. It corresponds to the shape.

  In order to manufacture the deflection substrate 20b using the mold member 61, first, one surface of the translucent substrate 20f which is a base material of the deflection substrate 20b in the transferred layer forming step shown in FIG. On 20 g, a translucent transfer layer 20 h made of a resin material such as an epoxy resin or an acrylic resin, or low-melting glass is formed. Among these materials, when a thermosetting resin is used, the curing is stopped to a certain degree of flexibility.

  Next, in the transfer step shown in FIG. 6 (d), after the transfer layer 20h is brought into a softening state by a method such as heating, the molding surface 613 of the mold member 61 is pressed against the transfer layer 20h, The reverse pattern of the groove 612 is transferred to the transfer layer 20h. Next, after the layer to be transferred 20h is solidified and the mold member 61 is removed, as shown in FIG. 6E, a deflection projection 261 having an inclined surface 262 is formed on the layer to be transferred 20h. In addition, when a release agent is applied to the molding surface 613 of the mold member 61 at the time of transfer, the mold member 61 can be easily removed, and the shape of the deflection protrusion 261 does not collapse.

  Next, in the reflectivity imparting step shown in FIG. 6F, the high refractive index layer 20i having a refractive index higher than that of the transferred layer 20h is formed so as to completely cover the transferred layer 20h. As a result, the slope 262 of the deflection protrusion 261 is covered with the high refractive index layer 20i, and the slope 262 is given reflectivity.

  Next, in the polishing step shown in FIG. 6G, the surface 20k of the light-transmitting substrate 20f is polished, the light-transmitting substrate 20f is thinned, and the surface 20k is smoothed. In this polishing step, chemical mechanical polishing is performed in this embodiment. In this chemical mechanical polishing, a smooth polished surface can be obtained at high speed by the action of chemical components contained in the polishing liquid and the relative movement of the abrasive and the light-transmitting substrate 20f. More specifically, in a polishing apparatus, while rotating a surface plate on which a polishing cloth (pad) made of a nonwoven fabric, polyurethane foam, porous fluororesin, or the like is attached, and a holder that holds the translucent substrate 20f, Polish. At that time, for example, an abrasive containing cerium oxide particles having an average particle diameter of 0.01 to 20 μm, an acrylate derivative as a dispersant, and water is supplied between the polishing cloth and the light-transmitting substrate 20f. The surface of the transferred layer 20h may also be polished and smoothed.

  Next, as illustrated in FIG. 6H, the counter electrode 21 and the alignment film 29 are formed on the surface 20 k side of the translucent substrate 20 f to obtain the counter substrate 20.

(Main effects of this form)
As described above, in this embodiment, in obtaining the deflection substrate 20b, the translucent transferred layer 20h is formed on the translucent substrate 20f, and then the shape of the deflection protrusion 261 in the mold member 61 is accommodated. The forming surface 613 provided with the groove 612 is pressed to transfer the reverse pattern of the groove 612 to the transferred layer 20h, and the deflection protrusion 261 provided with the inclined surface 262 is formed. For this reason, since it is not necessary to form the inclined surface 262 of the deflection substrate 20b by etching, the deflection substrate 20b can be efficiently manufactured, and the inclination angle 262 of the deflection projection 261 has a high accuracy of the inclination angle. , Variation does not occur.

  In this embodiment, since the incident light is guided to the pixel opening region 100d by the deflecting portion 26 having a V-shaped cross section, it is not necessary to provide a light shielding layer called a black matrix or a black stripe on the counter substrate 20. Accordingly, the number of manufacturing steps can be reduced.

[Embodiment 2]
(Configuration of deflection substrate 20b)
FIGS. 7 (a) and 7 (b) are schematic diagrams showing the cross section of the liquid crystal device according to the second embodiment of the present invention, showing the cross-sectional configuration of the deflection substrate, and the deflection unit of the deflection substrate. It is explanatory drawing which shows a plane structure. In FIG. 7A, illustration of the alignment film 16 and the like on the element substrate 10 side is omitted. In addition, since the basic configuration of the present embodiment is the same as that of the first embodiment, common portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 7A and 7B, in the liquid crystal device 100 of the present embodiment as well, the light incident from the counter substrate 20 side is optically modulated for each pixel by the liquid crystal layer 50, as in the first embodiment. Thereafter, the light is emitted from the element substrate 10. Also in this embodiment, as in the first embodiment, a deflection substrate 20b is used as the counter substrate 20, and in this deflection substrate 20b, the light is directed toward the side on which light to be modulated is incident with the inclined surface facing the pixel. A deflecting portion 26 having a V-shaped cross section that is guided toward the opening region 100d is formed along a region overlapping the light shielding region 100c.

  More specifically, in the deflection substrate 20b, an epoxy resin is provided on the surface 20k (the surface on which the liquid crystal layer 50 is located) on the side where the light to be modulated of the translucent substrate 20f that is the base material is emitted. A translucent transferred layer 20h made of a resin material such as acryl resin or low melting point glass is formed, and the transferred layer 20h has a cross section V recessed toward the side on which light to be modulated is incident. A letter-shaped deflection groove 266 is formed. Further, on the surface 20k side of the translucent substrate 20f, a low refractive index layer 20s having a refractive index lower than that of the transferred layer 20h is formed so as to completely cover the transferred layer 20h. The slope 267 is covered with the low refractive index layer 20s. In the low refractive index layer 20s, the surface 20t on the side from which the light to be modulated is emitted is a smooth surface, on which the counter electrode 21 and the alignment film 29 are formed.

  In this embodiment, the low refractive index layer 20s is made of a silicon oxide film, another metal oxide film, or a resin according to the refractive index of the material constituting the transferred layer 20h, and the inclined surface 267 has reflectivity. Has been granted.

That is, the refractive index of the material constituting the transferred layer 20 h is n ₂₁ , the refractive index of the material constituting the low refractive index layer 20 s is n _22, and the incident angle of light with respect to the normal line of the inclined surface 267 is θ ₀ . In this case, n ₂₁ > n ₂₂ and n ₂₁ , n ₂₂ , θ ₀ are the following expressions: sin θ ₀ > n ₂₂ / n ₂₁
If the above condition is satisfied, total reflection occurs, so that the slope 267 can be provided with reflectivity.

  In the translucent substrate 20f, the surface 20g on the side from which the light to be modulated is emitted (the surface opposite to the side on which the liquid crystal layer 50 is located) is a smooth surface.

  In the liquid crystal device 100 configured as described above, light of various incident angles is incident from the light source unit 140 described with reference to FIG. 1 as in the first embodiment, and the pixel opening region 100d out of the incident light. As shown by the arrow L1, the light traveling toward is advanced as it is, while as shown by the arrow L2, the light traveling in the direction deviating from the direction toward the pixel opening region 100d is deflected by the deflection unit as shown by the arrow L3. 26 is reflected by the reflective slope 267 of 26 and directed toward the pixel opening region 100d.

  Here, the deflection unit 26 is composed of a deflection groove 266 having a substantially isosceles triangular section with the inclined surface 267 as one side, and the apex of the triangular shape is located at the center of the light shielding region 100c in the width direction. Further, the width dimension of the deflecting portion 26 (the length of the base of the triangular shape) is set to be approximately the same as or slightly wider than the width dimension of the light-shielding region 100c, so that from the direction toward the pixel opening region 100d. It can also be used effectively for light traveling in a deviating direction. Note that the inclination of the inclined surface 267 is set such that, for example, the angle formed with the normal to the substrate surface of the translucent substrate 20f is 3 ° or less, as disclosed in Japanese Patent Application Laid-Open No. 2006-215427. The According to this configuration, when the light is reflected by the inclined surface 267, the incident light can be deflected while reducing the increase in the light beam angle, and the incident light is converted into, for example, a projection optical system having an F number of 2.5. (See FIG. 1) can be converted into light having a light beam angle that can be sufficiently captured, and the contrast can be improved and the utilization efficiency of incident light can be improved.

(Manufacturing method of the deflection substrate 20b and the counter substrate 20)
With reference to FIG. 8, the manufacturing process of the deflection | deviation board | substrate 20b and the opposing board | substrate 20 is demonstrated among the manufacturing processes of the liquid crystal device 100 of this form. FIG. 7 is a process cross-sectional view illustrating a manufacturing process of the deflection substrate 20b and the counter substrate 20 used in the liquid crystal device 100 of the present embodiment.

  In order to manufacture the deflection substrate 20b and the counter substrate 20 of this embodiment, first, a transfer mold member 66 is formed by the steps shown in FIGS. 8A and 8B. For this purpose, as shown in FIG. 8A, as a base material of the mold member 66, a plate material 660 made of a metal substrate such as a silicon substrate, a quartz substrate, or nickel is prepared, and then a photolithography technique is used. A resist mask 67 having a thickness of 50 to 200 μm is formed on one surface 661 thereof. Next, dry etching is performed on the plate material 660. For such dry etching, an ICP dry etching apparatus capable of forming high-density plasma is used, and the etching selectivity between the plate material 660 and the resist mask 67 is set to 4: 1, for example. As a result, as shown in FIG. 8B, a protrusion 662 having a V-shaped cross section having a depth approximately four times the thickness of the resist mask 67 is formed. In this manner, a mold member 66 having a V-shaped projection 662 on the molding surface 663 can be obtained. The shape of the projection 662 is the same as that of the deflection groove 266 described with reference to FIG. It corresponds to the shape.

  In order to manufacture the deflection substrate 20b using the mold member 66, first, one surface of the translucent substrate 20f as a base material of the deflection substrate 20b in the transferred layer forming step shown in FIG. On 20k, a translucent transferred layer 20h made of a resin material such as epoxy resin or acrylic resin, or low melting point glass is formed.

  Next, in the transfer step shown in FIG. 8D, with the transferred layer 20h softened, the molding surface 663 of the mold member 66 is pressed to transfer the reverse pattern of the protrusion 662 to the transferred layer 20h. . Next, after solidifying the transferred layer 20h, the mold member 66 is removed, and as shown in FIG. 8E, a deflection groove 266 having a slope 267 is formed in the transferred layer 20h. Note that if a release agent is applied to the molding surface 663 of the mold member 66 at the time of transfer, the mold member 66 can be easily removed, and the shape of the deflection groove 266 does not collapse.

  Next, in the reflectivity imparting step shown in FIG. 8 (f), a low refractive index layer 20s having a refractive index lower than that of the transferred layer 20h is formed so as to completely cover the transferred layer 20h. As a result, the slope 267 of the deflection groove 266 is covered with the low refractive index layer 20s, and the slope 267 is given reflectivity.

  Next, in the polishing step shown in FIG. 8G, the other surface 20g of the translucent substrate 20f is polished to thin the translucent substrate 20f, and the surface 20g is smoothed. Further, in the low refractive index layer 20s, the surface 20t on the side from which the light to be modulated is emitted may be polished and smoothed. In this polishing step, in this embodiment, chemical mechanical polishing is performed as in the first embodiment. Next, the counter electrode 21 and the alignment film 29 are formed on the surface 20t side of the low refractive index layer 20s, and the counter substrate 20 is obtained.

(Main effects of this form)
As described above, in this embodiment, in obtaining the deflection substrate 20b, the translucent transfer layer 20h is formed on the translucent substrate 20f, and then the shape of the deflection groove 266 in the mold member 66 is accommodated. The forming surface 663 provided with the protrusion 662 is pressed to transfer the reverse pattern of the protrusion 662 to the transferred layer 20h, and the deflection groove 266 provided with the inclined surface 267 is formed. For this reason, since it is not necessary to form the inclined surface 267 of the deflection substrate 20b by etching, the deflection substrate 20b can be efficiently manufactured, and the inclination angle 267 of the deflection projection 261 has a high accuracy of the inclination angle. , Variation does not occur.

  In this embodiment, since the incident light is guided to the pixel opening region 100d by the deflecting portion 26 having a V-shaped cross section, it is not necessary to provide a light shielding layer called a black matrix or a black stripe on the counter substrate 20. Accordingly, the number of manufacturing steps can be reduced.

[Modification of Embodiment 2]
In the second embodiment, the low refractive index layer 20s is formed so as to completely cover the transferred layer 20h. However, the low refractive index layer 20s may be filled only in the deflection groove 266. In the second embodiment, the deflecting groove 662 is filled with a low refractive material such as an oxide film or a resin. However, as shown in FIG. 9, the deflecting groove 662 may be filled with air 268 as a low refractive index material. The slope 267 can be provided with reflectivity. Such a configuration can be realized, for example, by attaching a light-transmitting cover substrate 20w to the transfer layer 20h via an adhesive 20v under a reduced pressure atmosphere.

[Manufacturing Method of Another Deflection Substrate 20b]
In the first and second embodiments, the translucent substrate 20f is left in the polishing process, but the translucent substrate 20f may be completely removed. In the above embodiment, dry etching is used to form the mold members 61 and 66, but laser etching may be performed.

  In the first and second embodiments, the difference in refractive index is used to provide reflectivity to the slopes 262 and 267. However, aluminum, an aluminum alloy, silver, a silver alloy, or the like is used so as to cover the slopes 262 and 267. A light reflective material layer may be formed. In this case, in Embodiment 1, a light reflective material layer is formed only on the slope 262. On the other hand, in the second embodiment, either a configuration in which a light reflective material layer is formed only on the slope 267 or a configuration in which the deflection groove 266 is filled with a light reflective material layer may be employed.

  In the above embodiment, an example in which the cross section of the deflection protrusion 261 and the deflection groove 266 is an isosceles triangle has been described. However, as shown in FIG. 10A, the top of the isosceles triangle is rounded. As shown in FIG. 10B, the configuration in which the inclined surfaces 262 and 267 have a first inclined surface 268 and a second inclined surface 269 having different inclinations with respect to the normal direction to the substrate surface of the translucent substrate 20f is adopted. May be. Here, if the second slope 269 located on the bottom side of the isosceles triangle forms a larger angle than the first slope 268 with respect to the normal direction to the substrate surface of the translucent substrate 20f. The incident light can be guided to the center of the pixel opening region 100d while avoiding the end portion of the pixel opening region 100d in which a liquid crystal domain or the like is likely to be generated.

  In the above embodiment, the light shielding layer referred to as a black matrix or a black matrix is omitted from the counter substrate 20, but such a light shielding layer may be provided.

[Other embodiments]
FIG. 1 illustrates a projection display device using three light valves. However, when the liquid crystal device 100 includes a color filter, the present invention is applied to the projection display device shown in FIG. The liquid crystal device 100 may be used as a light valve, and a color image may be projected and displayed on the screen 211. That is, the projection display apparatus 210 shown in FIG. 11 includes a light source unit 240 including a white light source 212, an integrator 221, and a polarization conversion element 222, the liquid crystal device 100, and a projection optical system 218. In the liquid crystal device 100, the first polarizing plate 216a and the second polarizing plate 216b are arranged on both sides of the liquid crystal panel 100x with a built-in color filter.

  In the above embodiment, the transmissive liquid crystal device used in the projection display device is exemplified as the electro-optical device. However, the present invention may be applied to a reflective liquid crystal device used in the projection display device. Also, a direct-view transmissive or transflective liquid crystal device that displays an image using light emitted from a backlight device as incident light, and a direct-view reflective liquid crystal device that displays images using external light as incident light. The present invention may be applied to an apparatus.

  Furthermore, in the above embodiment, the liquid crystal device has been described as an example of the electro-optical device, but for the purpose of preventing color mixing or the like in the electro-optical device that displays an image on the image display surface by the modulated light emitted from the self-light emitting element. Alternatively, the present invention may be applied to an electro-optical device in which a grid-like light shielding region extending in the vertical and horizontal directions is provided and modulated light is emitted from a pixel opening region surrounded by the light shielding region.

It is a schematic block diagram of the projection type display apparatus to which this invention is applied. (A), (b) is explanatory drawing which shows typically the structure of the liquid crystal panel used for the liquid crystal light valve in the projection type display apparatus shown in FIG. 1, and the block diagram which shows the electrical structure of the liquid crystal device. is there. It is sectional drawing for one pixel of the liquid crystal device to which this invention is applied. (A), (b) is the top view of the pixel which adjoins in the element substrate used for the liquid crystal device to which this invention is applied, respectively, and explanatory drawing which showed the light-shielding area | region on this element substrate by the upward slanting oblique line. is there. (A), (b) is each explanatory drawing which shows typically the cross section of the liquid crystal device which concerns on Embodiment 1 of this invention, and shows the cross-sectional structure of a deflection | deviation part, and explanatory drawing which shows the plane structure of a deflection | deviation part. is there. It is process sectional drawing which shows the manufacturing method of the opposing board | substrate (deflection board | substrate) used for the liquid crystal device which concerns on Embodiment 1 of this invention. (A), (b) is explanatory drawing which shows typically the cross section of the liquid crystal device which concerns on Embodiment 2 of this invention, shows the cross-sectional structure of a deflection | deviation part, and is explanatory drawing which shows the plane structure of a deflection | deviation part, respectively. is there. It is process sectional drawing which shows the manufacturing method of the opposing board | substrate (deflection board | substrate) used for the liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing which shows the modification of the deflection | deviation board | substrate used with the liquid crystal device which concerns on the modification of Embodiment 2 of this invention. It is explanatory drawing which shows another deflection | deviation board | substrate used with the liquid crystal device to which this invention is applied. It is a schematic block diagram of another projection type display apparatus to which this invention is applied. (A), (b) is explanatory drawing which shows the cross-sectional structure of a deflection | deviation groove | channel by showing typically the cross section of the conventional liquid crystal device, and explanatory drawing which shows the planar structure of a deflection | deviation groove | channel, respectively. It is process sectional drawing which shows the method of forming the deflection | deviation groove | channel shown in FIG.

Explanation of symbols

10..Element substrate, 20..Counter substrate, 20b..Deflection substrate, 20f..Translucent substrate, 20h..Transfer layer, 20i..High refractive index layer, 20s..Low refractive index layer, ··· Deflection part, 61, 66 ·· Mold member, 100 ·· Liquid crystal device (electro-optical device), 100c ·· Light-shielding region, 100d ·· Pixel opening region, 261 ·· Deflection protrusion, 262, 267 ·· Slope 266 .. Deflection groove

Claims (8)

In the manufacturing method for an electro-optical device having a pair of slope shape made the board of V-shaped cross section for guiding incident light to the pixel opening region,
A transferred layer forming step of forming a transparent transferred layer on the transparent substrate;
A transfer step of pressing a molding surface having projections and depressions of a mold member to transfer a reverse pattern of the projections and depressions to the transfer layer to form a pair of inclined surfaces having a V-shaped cross section ;
A reflectivity imparting step for imparting reflectivity to the pair of slopes;
A method for manufacturing an electro-optical device. The transferred layer is a thermosetting resin,
In the transferred layer forming step, the transferred layer is kept in a soft state,
The method of manufacturing an electro-optical device according to claim 1, wherein the transfer layer is cured after the transfer step. In the transferred layer forming process,
Before transferring the reverse pattern of the unevenness to the transferred layer, the transferred layer is heated to bring the transferred layer into a state of showing flexibility.
The method of manufacturing an electro-optical device according to claim 1, wherein the transferred layer is cured after the reverse pattern of the unevenness is transferred to the transferred layer. A pair of inclined surfaces of the V-shaped cross section is an impact caused the light to be modulated is pointed toward the side where the incident,
The mold member has a groove is formed in the V-shaped cross section corresponding to those of the protrusion,
In the reflective-imparting step, before Ki突 to cover the slopes of force, according to claim 1, characterized in that forming the higher refractive index than the transfer layer high refractive index layer, or a light reflective material layer 4. A method for manufacturing an electro-optical device according to any one of items 1 to 3. The pair of inclined surfaces having a V-shaped cross section are grooves recessed toward the side on which light to be modulated is incident,
The mold member, the projection is formed of a V-shaped cross section corresponding to those of the groove,
Wherein the reflective application step, so as to cover the inclined surface before the Kimizo, claim 1, wherein the forming the lower low refractive index layer having a refractive index than the transfer layer, or a light reflective material layer 4. A method for manufacturing an electro-optical device according to any one of items 1 to 3.   The method of manufacturing an electro-optical device according to claim 1, wherein the transfer layer is made of a resin material or a low-melting glass material. 7. The method according to claim 1, further comprising a thinning step of polishing and thinning a surface of the translucent substrate opposite to the layer to be transferred after the reflection imparting step. A method of manufacturing the electro-optical device according to claim .   8. The device substrate according to claim 1, further comprising: a pixel-shaped light-shielding region that defines the pixel opening region, and a pixel electrode provided so as to correspond to the pixel opening region. A method for manufacturing an electro-optical device, comprising a step of bonding a substrate manufactured by the manufactured manufacturing method.

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