JP5124347B2 - Semiconductor mounting substrate and manufacturing method thereof - Google Patents

Semiconductor mounting substrate and manufacturing method thereof Download PDF

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JP5124347B2
JP5124347B2 JP2008140301A JP2008140301A JP5124347B2 JP 5124347 B2 JP5124347 B2 JP 5124347B2 JP 2008140301 A JP2008140301 A JP 2008140301A JP 2008140301 A JP2008140301 A JP 2008140301A JP 5124347 B2 JP5124347 B2 JP 5124347B2
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heat
mounting
heat sink
mold
substrate
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JP2009289934A (en
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健司 木田
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Apic Yamada Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

本発明は、LEDなどの発光装置、CPUなどの半導体装置等が基板実装された半導体実装基板及びその製造方法に関する。   The present invention relates to a semiconductor mounting substrate on which a light emitting device such as an LED, a semiconductor device such as a CPU, and the like are mounted on a substrate, and a manufacturing method thereof.

近年、CPU,MPUなどの半導体装置の高速化に伴う発熱対策や、地球温暖化対策として白熱電球に替わって普及が進んでいるLEDを光源とする発光装置において発熱対策が課題となっている。   2. Description of the Related Art In recent years, countermeasures against heat generation have become a problem in light emitting devices using LED as a light source, which has been widely used in place of incandescent light bulbs as a countermeasure against global warming, and as a countermeasure against global warming.

従来の半導体デバイスの冷却方法としては、半導体実装基板の裏面側にヒートシンク(放熱板)を貼るか、半導体装置とヒートシンクをモールドして一体成形したり、半導体装置にヒートシンクを外部より取り付けたり、更にはヒートシンクと冷却ファンを併用したり、ヒートシンクに替えてポンプで冷媒を循環させる水冷式の冷却装置が用いられている。或いは、パワーモジュールが搭載されるセラミック基板を水冷式ヒートシンクにねじ止めして接合したパワーモジュール用基板も提案されている(特許文献1)。
特開2001−35982号公報
Conventional semiconductor device cooling methods include attaching a heat sink (heat sink) to the back side of the semiconductor mounting substrate, molding the semiconductor device and the heat sink integrally, attaching the heat sink to the semiconductor device from the outside, A water-cooled cooling device is used in which a heat sink and a cooling fan are used in combination, or a refrigerant is circulated by a pump instead of a heat sink. Alternatively, a power module substrate in which a ceramic substrate on which the power module is mounted is screwed to a water-cooled heat sink and joined is also proposed (Patent Document 1).
JP 2001-35982 A

しかしながら、ヒートシンクを直接半導体パッケージや基板などに貼り付ける場合、放熱特性を十分に確保できず接着剤が劣化して剥離が促進し易いうえに、配線パターンとの電気的絶縁性を考慮した構成としなければならない。
また、樹脂基板全面にヒートシンクを張り合わせるとすると、製品重量が増大するうえに、封止樹脂と金属との線膨張係数の差から基板が反り易く、後工程の加工がし難くなる。
However, when the heat sink is directly attached to a semiconductor package or substrate, the heat dissipation characteristics cannot be secured sufficiently, the adhesive is deteriorated and peeling is likely to be promoted, and the electrical insulation from the wiring pattern is taken into consideration. There must be.
Further, if the heat sink is bonded to the entire surface of the resin substrate, the weight of the product increases, and the substrate is likely to warp due to the difference in linear expansion coefficient between the sealing resin and the metal, making it difficult to perform subsequent processing.

特に高輝度LEDを用いた発光装置においては、発熱により半導体装置の劣化が促進され、照度が低下し製品寿命が短くなり易い。また、LEDは照射光に紫外線を含むためリフレクタの反射率低下及び透明樹脂の白濁による劣化等が寿命の短縮の要因となり、かかる紫外線による劣化サイクルが発熱により促進される。更には、劣化した部品の部品交換による製造コストも嵩む。   In particular, in a light-emitting device using a high-intensity LED, deterioration of the semiconductor device is promoted by heat generation, and the illuminance is lowered and the product life tends to be shortened. Further, since the LED includes ultraviolet rays in the irradiation light, a decrease in the reflectivity of the reflector and deterioration due to white turbidity of the transparent resin cause a shortening of the lifetime, and the deterioration cycle due to the ultraviolet rays is promoted by heat generation. Furthermore, the manufacturing cost by replacing the deteriorated parts increases.

本発明の目的は、上記従来技術の課題を解決し、基板実装された半導体装置から発生した熱をヒートシンクによって効率よく放熱可能な半導体実装基板及び既存の設備を用いて安価で生産性が良くしかも基板とヒートシンクを強固に組み付けられる半導体実装基板の製造方法を提供することにある。   The object of the present invention is to solve the above-mentioned problems of the prior art, and to use a semiconductor mounting substrate and existing equipment that can efficiently dissipate heat generated from the semiconductor device mounted on the substrate by a heat sink, and it is inexpensive and highly productive. An object of the present invention is to provide a method for manufacturing a semiconductor mounting substrate in which a substrate and a heat sink can be firmly assembled.

本発明は上記目的を達成するため、次の構成を備える。
即ち、半導体装置が実装される部位に当該半導体装置の実装面積より小さい貫通孔が形成された実装基板と、前記実装基板の半導体装置実装面とは反対面側に前記貫通孔に突部を嵌め込まれて前記半導体装置と直接若しくは間接に当接可能に組み付けられ、外周縁部にはだれ部若しくは面取り部が形成され前記半導体装置の実装面積より大きい平板部を有するヒートシンクと、を備え、前記ヒートシンクは平板部を基板反対面側に露出し周囲を封止樹脂に封止され前記だれ部若しくは面取り部の表面側に封止樹脂を充填して前記基板と一体に抜け止め保持されていることを特徴とする。
また、前記ヒートシンクは単数若しくは複数設けられ、平板部の総面積は周囲の封止樹脂の面積と等しくなるように形成されていることを特徴とする。
また、前記ヒートシンクは、平板部に取り付けられた放熱フィン若しくは平板部に接続するヒートパイプを介して放熱フィンと接続されていることを特徴とする。
In order to achieve the above object, the present invention comprises the following arrangement.
That is, a mounting board in which a through hole smaller than the mounting area of the semiconductor device is formed at a part where the semiconductor device is mounted, and a protrusion is fitted into the through hole on the opposite side of the mounting board from the semiconductor device mounting surface A heat sink having a flat plate portion larger than the mounting area of the semiconductor device , wherein the heat sink has a flat plate portion larger than a mounting area of the semiconductor device. characterized in that the sealed around exposed flat portion on the substrate surface opposite to the sealing resin said filling anyone portion or the sealing resin on the surface side of the chamfered portion are retaining held on the substrate integrally And
One or a plurality of heat sinks are provided, and the total area of the flat plate portion is formed to be equal to the area of the surrounding sealing resin.
The heat sink is connected to the heat radiating fins via heat radiating fins attached to the flat plate portion or heat pipes connected to the flat plate portion.

また、半導体実装基板の製造方法としては、金属枠体の一方の面に中心孔を塞いで耐熱性シートを貼り付ける工程と、前記金属枠体の中心孔を塞いで凹部が形成された耐熱シート上に、半導体装置が実装される実装位置に貫通孔が形成され該貫通孔に突部を嵌め込ませてヒートシンクが組み付けられた実装基板を実装面を下向きして載置する工程と、前記金属枠体及び封止樹脂をモールド金型へ搬入し若しくは前記ヒートシンクの周囲の実装基板上に封止樹脂を供給してから前記金属枠体をモールド金型へ搬入する工程と、前記モールド金型により実装基板及び金属枠体をクランプし、前記ヒートシンクの周囲の隙間に封止樹脂を加熱加圧しながら充填して硬化させる工程と、を含むことを特徴とする。
また、前記モールド金型の一方のクランプ面にはダム部が突設されており、当該モールド金型が金属枠体及び実装基板をクランプすると耐熱性シートで覆われたダム部が基板側面に当接することを特徴とする。
Further, as a method for manufacturing a semiconductor mounting substrate, a step of closing a center hole on one surface of a metal frame and sticking a heat resistant sheet, and a heat resistant sheet having a recess formed by closing the center hole of the metal frame A step of mounting a mounting substrate on which a through hole is formed at a mounting position on which a semiconductor device is mounted and a protrusion is fitted into the through hole and a heat sink is assembled, with the mounting surface facing down; and the metal frame The body and the sealing resin are carried into the mold, or the sealing resin is supplied onto the mounting substrate around the heat sink and then the metal frame is carried into the mold, and the mounting is performed by the mold. A step of clamping the substrate and the metal frame, and filling and curing a sealing resin in a gap around the heat sink while heating and pressing.
In addition, a dam portion protrudes from one clamping surface of the mold die, and when the mold die clamps the metal frame and the mounting substrate, the dam portion covered with the heat-resistant sheet contacts the side surface of the substrate. It is characterized by touching.

本発明に係る半導体実装基板を用いれば、平板状のヒートシンクは、実装基板の半導体装置実装面とは反対面側に貫通孔に突部を嵌め込まれて半導体装置と直接若しくは間接に当接して組み付けられるので、半導体装置で発生した熱を基板裏面側に導いて効率よく放散させることができる。特に、高輝度LEDを用いた発光装置においては、発熱により劣化しやすい半導体装置の製品寿命を長くすることができる。
また、ヒートシンクは平板部を露出し外周を封止樹脂に封止されて基板と一体に保持されているので、基板全面に貼り合わせる場合に比べて反りの影響は受け難く、実装基板と銅製ヒートシンクの線膨張係数はあまり変わらないため実装基板から離脱することなく一体に保持することができる。
また、ヒートシンクの外周縁部にはだれ部若しくは面取り部が形成されており、該だれ部若しくは面取り部の表面側に封止樹脂を充填することによりアンカー効果が生じてヒートシンクを基板に対して強固に保持することができる。
また、ヒートシンクは単数若しくは複数設けられ、平板部の総面積は周囲の封止樹脂の面積と等しくなるように形成されていると、半導体装置で発生した熱が基板に拡散されずにヒートシンクに集熱されて効率よく放熱することができる。
また、前記ヒートシンクは、平板部に取り付けられた放熱フィン若しくはヒートパイプを介して放熱フィンと接続されていると、熱放散性を更に高めることができる。また、ヒートパイプにより発熱を外部に逃がすことで、実装基板自体の厚さを増大することなく自由なレイアウトで熱放散性を向上させることができる。
If the semiconductor mounting substrate according to the present invention is used, the flat heat sink is assembled by directly or indirectly contacting the semiconductor device by inserting a protrusion into the through hole on the surface of the mounting substrate opposite to the semiconductor device mounting surface. Therefore, the heat generated in the semiconductor device can be guided to the back side of the substrate and efficiently dissipated. In particular, in a light-emitting device using a high-intensity LED, the product life of a semiconductor device that easily deteriorates due to heat generation can be extended.
In addition, the heat sink is exposed to a flat plate and the outer periphery is sealed with a sealing resin, and is held integrally with the substrate. Since the coefficient of linear expansion of the material does not change much, it can be held integrally without being detached from the mounting substrate.
Further, a drooping portion or a chamfered portion is formed on the outer peripheral edge portion of the heat sink, and an anchor effect is generated by filling a sealing resin on the surface side of the drooping portion or the chamfered portion so that the heat sink is firmly attached to the substrate. Can be held.
The heat sink is provided singular or plural, the total area of the flat plate portion is formed to be equal properly and the area of the sealing resin surrounding the heat sink without being diffused into heat substrate generated in the semiconductor device Heat is collected and heat can be efficiently dissipated.
In addition, when the heat sink is connected to the heat radiating fin via a heat radiating fin or a heat pipe attached to the flat plate portion, the heat dissipation can be further enhanced. In addition, by dissipating heat to the outside by the heat pipe, heat dissipation can be improved with a free layout without increasing the thickness of the mounting substrate itself.

また、ヒートシンクが組み付けられた実装基板をクランプしヒートシンクの周囲の隙間に溶融した封止樹脂を圧送りして加熱加圧しながら硬化させるトランスファー成形若しくはヒートシンクの周囲の隙間に封止樹脂を供給してからモールド金型をクランプし、ヒートシンクの周囲の隙間に封止樹脂を加熱加圧しながら充填して硬化させる圧縮成形のいずれかを用いてヒートシンクを基板に一体に組付け保持することができるので、既存の設備を用いてヒートシンクが組み付けられた実装基板を安価で大量生産することができる。
また、金属枠体の中心孔に耐熱性シートが貼り付けられて凹部が形成された当該耐熱性シート上に、ヒートシンクが組み付けられた実装基板を載置しモールド金型により実装基板及び金属枠体をクランプするので、ヒートシンクの周囲に充填される封止樹脂を金属枠体にてせき止めて封止するので樹脂圧を均等に行き渡らせることができる。
また、モールド金型の一方のクランプ面にはダム部が突設されており、当該モールド金型が金属枠体及び実装基板をクランプすると耐熱性シートで覆われたダム部が基板側面に当接するので、基板面より封止樹脂が外部に漏れ出ることはなく、樹脂使用料を抑えて歩留まりが向上する。
Also, clamp the mounting substrate with the heat sink assembled, and press the melted sealing resin into the gap around the heat sink and cure it while heating and pressurizing, or supply the sealing resin into the gap around the heat sink Since the mold mold is clamped from and the heat sink can be integrally assembled and held on the substrate by using either compression molding that fills and cures the sealing resin while heating and pressurizing the gap around the heat sink, A mounting board on which a heat sink is assembled using existing equipment can be mass-produced at low cost.
In addition, a mounting substrate on which a heat sink is assembled is placed on the heat-resistant sheet in which a heat-resistant sheet is attached to the center hole of the metal frame to form a recess, and the mounting substrate and the metal frame are mounted by a mold. Since the sealing resin filled around the heat sink is blocked by the metal frame and sealed, the resin pressure can be evenly distributed.
In addition, a dam portion protrudes from one clamp surface of the mold, and when the mold die clamps the metal frame and the mounting substrate, the dam portion covered with the heat-resistant sheet contacts the side surface of the substrate. Therefore, the sealing resin does not leak to the outside from the substrate surface, and the yield is improved by suppressing the resin usage fee.

以下、本発明に係る半導体実装基板及びその製造方法の好適な実施の形態について添付図面と共に詳述する。
先ず、半導体実装基板の構造について、一例として発光素子を搭載した発光基板を用いて説明する。図1において、実装基板1は公知のガラスエポキシ樹脂基板であり、半導体装置2の実装面1aに配線パターンが形成され、基板端子に半導体装置(例えばLEDパッケージ)2が基板実装されている。LEDパッケージは半導体チップ27の一例である発光ダイオードの上部がレンズキャップ28で覆われた発光素子であり、高輝度LEDにおいては、大電流が流れ、大量の発熱を伴う。半導体装置2としては、LEDパッケージのほかに、CPUやMPUのような集積回路を持ち、大量の発熱を伴う高出力の半導体素子も含まれる。
Preferred embodiments of a semiconductor mounting substrate and a method for manufacturing the same according to the present invention will be described below in detail with reference to the accompanying drawings.
First, the structure of a semiconductor mounting substrate will be described using a light emitting substrate on which a light emitting element is mounted as an example. In FIG. 1, a mounting substrate 1 is a known glass epoxy resin substrate, a wiring pattern is formed on a mounting surface 1a of a semiconductor device 2, and a semiconductor device (for example, an LED package) 2 is mounted on the substrate terminal. The LED package is a light emitting element in which an upper portion of a light emitting diode, which is an example of the semiconductor chip 27, is covered with a lens cap 28. In a high brightness LED, a large current flows and a large amount of heat is generated. In addition to the LED package, the semiconductor device 2 includes a high-power semiconductor element having an integrated circuit such as a CPU or MPU and generating a large amount of heat.

図1において、実装基板1には半導体装置2が実装される部位に貫通孔3が形成されている。実装基板1の半導体装置2の実装面1aとは反対面側に貫通孔3に突部4を嵌め込まれて半導体装置2と直接若しくは間接に当接して発生した熱を外部へ放散させる平板状のヒートシンク5が組み付けられている。   In FIG. 1, a through-hole 3 is formed in a portion where a semiconductor device 2 is mounted on a mounting substrate 1. A flat plate-like shape that dissipates the heat generated by projecting the protrusion 4 into the through hole 3 on the opposite side of the mounting surface 1a of the semiconductor device 2 of the mounting substrate 1 directly or indirectly with the semiconductor device 2. A heat sink 5 is assembled.

図1右半図は、半導体装置2の半導体チップ27をヒートシンク5の突部4に直接実装させ、実装基板1の回路配線と電気的に接続した後、パッケージ外形の樹脂封止を行なった一例を示す。同図では、突部4に直接半導体チップ27を実装したが、エラストマー等を間挿しても良い。
図1左半図は、半導体装置2とヒートシンク5の間にシリコン伝熱シート6(絶縁シート)を介して間接的に当接させた後、パッケージ外形の樹脂封止を行なった一例を示す。同図では、シリコン伝熱シート6を突部4と半導体装置2との間に間挿させたが、直接当接させても良い。ヒートシンク5は平板部5aを露出し外周を封止樹脂(例えばエポキシ樹脂)7に封止されて実装基板1と一体に保持されている。
The right half of FIG. 1 shows an example in which the semiconductor chip 27 of the semiconductor device 2 is directly mounted on the protrusion 4 of the heat sink 5 and electrically connected to the circuit wiring of the mounting substrate 1 and then the package outer shape is sealed with resin. Indicates. In the figure, the semiconductor chip 27 is directly mounted on the protrusion 4, but an elastomer or the like may be inserted.
The left half of FIG. 1 shows an example in which the outer shape of the package is sealed with resin after indirectly contacting the semiconductor device 2 and the heat sink 5 via a silicon heat transfer sheet 6 (insulating sheet). Although the silicon heat transfer sheet 6 is inserted between the protrusion 4 and the semiconductor device 2 in FIG. The heat sink 5 exposes the flat plate portion 5a, and the outer periphery is sealed with a sealing resin (for example, epoxy resin) 7 and is held integrally with the mounting substrate 1.

ヒートシンク5は、平板部5aに当接して設けられた放熱フィン8、更には放熱フィン8を強制冷却する冷却ファン9が設けられていてもよい。放熱フィン8及び取付ブロック26は、ねじ止め、ばね等による当接等、既存の取付方法で取り付けることが可能である。ヒートシンク5を冷やすことで放熱効率を上げるためである。また、ヒートシンク5の平板部5aにヒートパイプ10の一端である取付ブロック26を接続して他端を放熱フィン8に接続するようにしてもよい。   The heat sink 5 may be provided with a heat radiating fin 8 provided in contact with the flat plate portion 5 a and a cooling fan 9 for forcibly cooling the heat radiating fin 8. The radiating fin 8 and the mounting block 26 can be mounted by an existing mounting method such as screwing or abutting with a spring or the like. This is because the heat dissipation efficiency is improved by cooling the heat sink 5. Further, the mounting block 26 that is one end of the heat pipe 10 may be connected to the flat plate portion 5 a of the heat sink 5, and the other end may be connected to the radiation fin 8.

図2(a)はヒートシンク5が組み付けられた実装基板1の斜視図及び図2(b)はその分解図を示す。図2(c)はヒートシンク5の外周縁部5bの断面図を示す。
図2(c)において、ヒートシンク5の外周縁部5bにはだれ部5c若しくは面取り部5dが形成されているのが望ましい。だれ部5c若しくは面取り部5dの表面側に封止樹脂7を充填して抜け止め保持できるからである。
2A is a perspective view of the mounting substrate 1 on which the heat sink 5 is assembled, and FIG. 2B is an exploded view thereof. FIG. 2C shows a cross-sectional view of the outer peripheral edge 5 b of the heat sink 5.
In FIG. 2C, it is desirable that the outer peripheral edge portion 5b of the heat sink 5 is formed with a drooping portion 5c or a chamfered portion 5d. This is because the sealing resin 7 can be filled on the surface side of the drooping portion 5c or the chamfered portion 5d to prevent the falling portion 5c or the chamfered portion 5d.

また、ヒートシンク5は単数若しくは複数設けられ、平板部5aの総面積は周囲の封止樹脂7の面積と等しくなるように形成されていると半導体装置2で発生した熱が実装基板1全面に拡散されずにヒートシンク5に集熱されて効率よく放熱することができる。ちなみに実験を行なった基板構成要素、実装基板1、ヒートシンク5、封止樹脂7の線膨張係数を例示すると、ガラスエポキシ基板;14〜15ppm/℃、ヒートシンク(純銅;C1020);17ppm/℃、エポキシ樹脂;8〜16ppm/℃であった。尚、ヒートシンク5の材質は純銅、銅合金、アルミニウムなどの熱伝導性のよい金属材のほかに、PPS(ポリフェニレンサルファイト)にカーボンを混入したエンジニアリングプラスチックなどの耐熱性の高い樹脂材も用いられる。 The heat sink 5 is provided singular or plural, the total area of the flat portion 5a to the heat mounting substrate 1 entirely generated in the semiconductor device 2 is formed to be equal properly and the area around the sealing resin 7 Heat is collected by the heat sink 5 without being diffused and can be efficiently radiated. For example, the linear expansion coefficients of the substrate component, the mounting substrate 1, the heat sink 5, and the sealing resin 7 that were tested are: glass epoxy substrate; 14 to 15 ppm / ° C., heat sink (pure copper; C1020); 17 ppm / ° C., epoxy Resin; 8 to 16 ppm / ° C. The material of the heat sink 5 is not only a metal material having good thermal conductivity such as pure copper, copper alloy, aluminum, but also a resin material having high heat resistance such as engineering plastic in which carbon is mixed into PPS (polyphenylene sulfite). .

また、基板1に設けられる貫通孔3及びヒートシンク5に設けられる突部4の数は、単数又は複数のいずれであってもよい。本実施例では、熱伝導効率と基板スペースを考慮して半導体装置2に対して複数箇所で当接するように設けられている。   Further, the number of the through holes 3 provided in the substrate 1 and the number of the protrusions 4 provided in the heat sink 5 may be one or a plurality. In this embodiment, the semiconductor device 2 is provided so as to come into contact with the semiconductor device 2 in consideration of the heat conduction efficiency and the substrate space.

次に、半導体実装基板の製造方法の一例について、図3乃至図7を参照して説明する。図3乃至図6は、圧縮成形による半導体実装基板の製造方法について、図7はトランスファー成形による半導体実装基板の製造方法について説明する。
先ず、図3(a)において、モールド金型12の構成は、例えば特開2001−176902号公報の図1で示す半導体ウエハの樹脂封止用のプレス装置及びモールド金型を用いることができる。例えば、上型15は上型ベース(図示せず)にスプリングで吊下げられている。上記公報では、上型15がスプリングにて吊り下げられているが、当該スプリングは無くても良い。上型15及び下型16にはヒータ(図示せず)が設けられている。モールド金型12の上型クランプ面15aは耐熱性シート(例えばリリースフィルム、UV硬化性フィルム等)13で覆われている。
Next, an example of a method for manufacturing a semiconductor mounting substrate will be described with reference to FIGS. 3 to 6 illustrate a method for manufacturing a semiconductor mounting substrate by compression molding, and FIG. 7 illustrates a method for manufacturing a semiconductor mounting substrate by transfer molding.
First, in FIG. 3A, the mold 12 can be configured by using, for example, a resin sealing press device and a mold as shown in FIG. 1 of Japanese Patent Laid-Open No. 2001-176902. For example, the upper die 15 is suspended from an upper die base (not shown) by a spring. In the above publication, the upper die 15 is suspended by a spring, but the spring may not be provided. The upper die 15 and the lower die 16 are provided with heaters (not shown). The upper mold clamping surface 15 a of the mold 12 is covered with a heat resistant sheet (for example, a release film, a UV curable film, etc.) 13.

金属枠体14の下面には中心孔14aを塞いで耐熱性シート13が貼り付けられる。金属枠体14の中心孔14aは、実装基板1を収容できる外形をした貫通孔である。この金属枠体14の中心孔14aを耐熱性シート13で塞いで凹部14bが形成された当該耐熱シート13上に、ヒートシンク5が組み付けられた実装基板1が実装面1aを下向きして載置される。ヒートシンク5は、実装基板1の実装面1aと反対面(放熱面)1bより貫通孔3に突部4を嵌め込まれて組み付けられている(図4(a)(b)参照)。   A heat resistant sheet 13 is attached to the lower surface of the metal frame 14 so as to close the center hole 14a. The central hole 14 a of the metal frame 14 is a through hole having an outer shape that can accommodate the mounting substrate 1. The mounting board 1 on which the heat sink 5 is assembled is placed with the mounting surface 1a facing down on the heat-resistant sheet 13 in which the central hole 14a of the metal frame 14 is closed with the heat-resistant sheet 13 and the recess 14b is formed. The The heat sink 5 is assembled by fitting the protrusions 4 into the through holes 3 from the surface (heat radiating surface) 1b opposite to the mounting surface 1a of the mounting substrate 1 (see FIGS. 4A and 4B).

次に、実装基板1が載置された金属枠体14及び封止樹脂7が型開きしたモールド金型12の下型クランプ面16aへ搬入される。例えば、実装基板1に組み付けられたヒートシンク5の周囲の基板面に封止樹脂(液状樹脂、顆粒状樹脂等)7を供給し、モールド金型12を型閉じして実装基板1及び金属枠体14をクランプする。このとき、ヒートシンク5の周囲の隙間に溶融した封止樹脂7を加熱加圧しながら充填して硬化させる(キュア)。封止樹脂7は、金属枠体14の凹部14bより外側に漏れることがないため、十分な樹脂圧を加えて封止できる。更に、金属枠体14上に公知のエアーベントが設けられていてもよい。   Next, the metal frame 14 on which the mounting substrate 1 is placed and the sealing resin 7 are carried into the lower mold clamping surface 16a of the mold 12 in which the mold is opened. For example, a sealing resin (liquid resin, granular resin, etc.) 7 is supplied to the substrate surface around the heat sink 5 assembled to the mounting substrate 1, and the mold 12 is closed to mount the mounting substrate 1 and the metal frame. 14 is clamped. At this time, the molten sealing resin 7 is filled in the gap around the heat sink 5 while being heated and pressurized and cured (curing). Since the sealing resin 7 does not leak outside the concave portion 14b of the metal frame 14, it can be sealed by applying a sufficient resin pressure. Furthermore, a known air vent may be provided on the metal frame 14.

尚、図4(a)(b)において、上型クランプ面15aを覆うのと同様な長尺状の耐熱シート13に実装基板1を載置してからヒートシンク5を塔載するようにしても良い。
また、金属枠体14をモールド金型12へ搬入する前に実装基板1に組み付けられたヒートシンク5の周囲の基板面に封止樹脂(液状樹脂、顆粒状樹脂等)7を供給してから当該金属枠体14をモールド金型12へ搬入するようにしても良い。また、ヒートシンク5の上面にも耐熱シート13又はリリースフィルムを間挿して樹脂封止するようにしても良い。
4 (a) and 4 (b), the heat sink 5 may be mounted after the mounting substrate 1 is mounted on the long heat-resistant sheet 13 that covers the upper clamp surface 15a. good.
Further, before the metal frame 14 is carried into the mold 12, the sealing resin (liquid resin, granular resin, etc.) 7 is supplied to the substrate surface around the heat sink 5 assembled to the mounting substrate 1. The metal frame 14 may be carried into the mold 12. Moreover, the heat-resistant sheet 13 or the release film may be inserted also on the upper surface of the heat sink 5 to be resin-sealed.

或いは、図3(b)において、上型クランプ面15aにはダム部17が突設されており、モールド金型12をクランプするとダム部17が基板側面を耐熱性シート13で覆うようになっていてもよい。ダム部17は基板外周面と金属枠体14の内壁面との間で中心孔14a内に進入して下型クランプ面16aに当接し、実装基板1の外側面を囲むように当接している。モールド金型12をクランプすると、溶融した封止樹脂7がヒートシンク5の周囲の隙間(中心孔14a内)に充填され、ダム部17にせき止められて樹脂圧が印加されたまま加熱硬化させる(キュア)。   Alternatively, in FIG. 3B, a dam portion 17 protrudes from the upper mold clamping surface 15 a, and when the mold 12 is clamped, the dam portion 17 covers the side surface of the substrate with the heat resistant sheet 13. May be. The dam portion 17 enters the center hole 14 a between the outer peripheral surface of the substrate and the inner wall surface of the metal frame 14, contacts the lower mold clamping surface 16 a, and contacts the outer surface of the mounting substrate 1. . When the mold 12 is clamped, the melted sealing resin 7 is filled in the gap around the heat sink 5 (in the center hole 14a) and is damped by the dam portion 17 and cured by heating with the resin pressure applied (cure) ).

樹脂封止後の金属枠体14に囲まれた成形品を図5示す。図5(a)は金属枠体14に囲まれた成形品の平面図、図5(b)はその側断面図、図5(c)は実装基板部分の側面断面図を示す。モールド金型12を型開きして金属枠体14を取り出せば、実装基板1を含む成形品18が取り出せる。また、金属枠体14に囲まれた成形品18は、押圧することで容易に分離することができる。また、耐熱性シート13は、封止樹脂7との接触面が少ないため、成形品18より容易に剥離することができる。   FIG. 5 shows a molded product surrounded by the metal frame 14 after resin sealing. 5A is a plan view of a molded product surrounded by the metal frame 14, FIG. 5B is a side sectional view thereof, and FIG. 5C is a side sectional view of a mounting substrate portion. When the mold 12 is opened and the metal frame 14 is taken out, the molded product 18 including the mounting substrate 1 can be taken out. Further, the molded product 18 surrounded by the metal frame 14 can be easily separated by pressing. Further, since the heat-resistant sheet 13 has few contact surfaces with the sealing resin 7, it can be easily peeled off from the molded product 18.

また、図6において、複数設けられたヒートシンク5どうしは、熱伝導しやすい接続部材11により接続されて樹脂封止されていてもよい。この場合には、実装基板1に設けられたヒートシンク5を全て使用して熱放散性を高めることができる。   In FIG. 6, a plurality of heat sinks 5 provided may be connected by a connecting member 11 that easily conducts heat and sealed with resin. In this case, heat dissipation can be enhanced by using all of the heat sink 5 provided on the mounting substrate 1.

次に、トランスファー成形を用いた半導体実装基板の製造方法について図7を参照して説明する。図7(a)はモールド金型の平面図、図7(b)はその断面図及び図7(c)は成形品の側断面図である。
図7(b)において、モールド金型19のうち、上型20には金型カル21及び金型ランナゲート22が形成されている。下型23には、ポット24及びプランジャ25が設けられている。ヒートシンク5が組み付けられた実装基板1が実装面を下向きして載置された金属枠体14がモールド金型19へ搬入される。実装基板1は、金属枠体14の中心孔14aを塞いで耐熱性シート13が貼り付けられて凹部14bが形成された当該耐熱シート13上に載置されている。耐熱シート13は、上型20のクランプ面を覆うように間挿してもよい。
Next, a method for manufacturing a semiconductor mounting substrate using transfer molding will be described with reference to FIG. 7A is a plan view of the mold, FIG. 7B is a sectional view thereof, and FIG. 7C is a side sectional view of the molded product.
In FIG. 7B, a mold cull 21 and a mold runner gate 22 are formed in the upper mold 20 of the mold mold 19. The lower mold 23 is provided with a pot 24 and a plunger 25. The metal frame 14 on which the mounting substrate 1 to which the heat sink 5 is assembled is placed with the mounting surface facing downward is carried into the mold 19. The mounting substrate 1 is placed on the heat-resistant sheet 13 in which the central hole 14a of the metal frame 14 is closed and the heat-resistant sheet 13 is attached to form a recess 14b. The heat-resistant sheet 13 may be inserted so as to cover the clamp surface of the upper mold 20.

また、モールド金型19のポット24には、樹脂タブレット(顆粒状樹脂、液状樹脂でもよい)が装填される。
次に、モールド金型19を型閉じして金属枠体14を及びワーク(ヒートシンク5及び実装基板1)をクランプする。そして、プランジャ25を上動させて加熱溶融した封止樹脂7が金型カル21及び金型ランナゲート22を介してヒートシンク5の周囲の隙間に充填される。封止樹脂7は金属枠体14にせき止められて樹脂圧が印加されたまま加熱硬化する(キュア;図7(a)参照)。
The pot 24 of the mold 19 is filled with a resin tablet (which may be a granular resin or a liquid resin).
Next, the mold 19 is closed to clamp the metal frame 14 and the work (heat sink 5 and mounting substrate 1). Then, the sealing resin 7 heated and melted by moving the plunger 25 upward is filled into the gap around the heat sink 5 through the mold cull 21 and the mold runner gate 22. The sealing resin 7 is dammed to the metal frame 14 and is cured by heating with the resin pressure applied (cure; see FIG. 7A).

尚、上型20のクランプ面には、図3(b)と同様なダム部17が突設されていてもよい。ダム部17は耐熱性シート13で覆われているのが望ましい。モールド金型19をクランプすると、ダム部17は基板外周面と金属枠体14の内壁面との間で中心孔14a内に進入して下型クランプ面16aに当接し、実装基板1の外側面を囲むように当接する。これによって、樹脂使用料を減らすことができる。   A dam portion 17 similar to that shown in FIG. 3B may project from the clamp surface of the upper mold 20. The dam portion 17 is preferably covered with a heat resistant sheet 13. When the mold 19 is clamped, the dam portion 17 enters the center hole 14a between the outer peripheral surface of the substrate and the inner wall surface of the metal frame 14 and comes into contact with the lower mold clamping surface 16a. Abut so as to surround. Thereby, the resin usage fee can be reduced.

最後に図7(c)において、モールド金型19を型開きして金属枠体14を取り出せば、成形品18が取り出せる。また、金属枠体14に囲まれた成形品18は、押圧することで容易に分離することができる。また、耐熱性シート13は、封止樹脂7との接触面が少ないため、成形品18より容易に剥離することができる。   Finally, in FIG. 7C, if the mold 19 is opened and the metal frame 14 is taken out, the molded product 18 can be taken out. Further, the molded product 18 surrounded by the metal frame 14 can be easily separated by pressing. Further, since the heat-resistant sheet 13 has few contact surfaces with the sealing resin 7, it can be easily peeled off from the molded product 18.

耐熱性シート13は、封止樹脂に接触する部位を覆うものであり、本実施例ではモールド金型クランプ面に吸引されて張設される。耐熱シート13の一例としてリリースフィルムを用いる場合は、モールド金型の加熱温度に耐えられる耐熱性を有するもので、上型面より容易に剥離するものであって、柔軟性、伸展性を有するフィルム材、例えば、PTFE、ETFE、PET、FEP、フッ素含浸ガラスクロス、ポリプロピレン、ポリ塩化ビニリジン等が好適に用いられる。また、UV硬化性シートを用いる場合は、UV光を照射して耐熱性シート13を剥離させる。   The heat-resistant sheet 13 covers a portion that comes into contact with the sealing resin. In this embodiment, the heat-resistant sheet 13 is sucked and stretched on the molding die clamping surface. When a release film is used as an example of the heat-resistant sheet 13, it has heat resistance that can withstand the heating temperature of the mold, and is easily peeled off from the upper mold surface, and has flexibility and extensibility. Materials such as PTFE, ETFE, PET, FEP, fluorine-impregnated glass cloth, polypropylene, and polyvinylidene chloride are preferably used. When using a UV curable sheet, the heat resistant sheet 13 is peeled off by irradiating with UV light.

尚、上述したように圧縮成形若しくはトランスファー成形等により実装基板1へヒートシンク5を組み付けた後、図1に示す発光基板を製造する工程について説明する。
図1右半図の発光基板を製造する場合には、半導体チップ(発光ダイオード)27を基板実装面1aへ露出する突部4へダイボンディングし、当該半導体チップ27と基板端子部とを例えばワイヤーボンディングにより電気的に接続する。そして、半導体チップ27を公知の成形方法により樹脂封止し、レンズキャップ28を取り付けると、発光基板が組み立てられる。
A process of manufacturing the light emitting substrate shown in FIG. 1 after assembling the heat sink 5 to the mounting substrate 1 by compression molding or transfer molding as described above will be described.
When the light emitting substrate shown in the right half of FIG. 1 is manufactured, a semiconductor chip (light emitting diode) 27 is die-bonded to the protrusion 4 exposed to the substrate mounting surface 1a, and the semiconductor chip 27 and the substrate terminal portion are connected to, for example, a wire. Electrical connection by bonding. When the semiconductor chip 27 is resin-sealed by a known molding method and the lens cap 28 is attached, the light emitting substrate is assembled.

また、図1左半図の発光基板を製造する場合には、実装基板1の実装面1aに露出する突部4に伝熱シート6を貼り付ける。その後、伝熱シート6を介して半導体装置(発光ダイオード)2を基板実装し、レンズキャップ28を取り付けると、発光基板が組み立てられる。   1 is manufactured, the heat transfer sheet 6 is attached to the protrusion 4 exposed on the mounting surface 1a of the mounting substrate 1. After that, when the semiconductor device (light emitting diode) 2 is mounted on the substrate via the heat transfer sheet 6 and the lens cap 28 is attached, the light emitting substrate is assembled.

以上、本発明の好適な実施例について種々述べてきたが、成形方法は上述した圧縮成形、トランスファー成形に限られるものではなく例えば射出成形を用いてもよい。また、LEDが実装された発光装置を例示したが、CPU等の他の高発熱半導体装置の実装基板に用いてもよい。また、発光装置は、家電製品に照明装置や、バックライト、或いは車両用の光源基板などに用いることができるなど、幅広い応用が見込まれる。   As described above, various preferred embodiments of the present invention have been described. However, the molding method is not limited to the compression molding and transfer molding described above, and for example, injection molding may be used. Further, although the light emitting device on which the LED is mounted is illustrated, the light emitting device may be used for a mounting substrate of another high heat generation semiconductor device such as a CPU. In addition, the light-emitting device can be used in a wide range of applications such as a lighting device, a backlight, or a light source substrate for a vehicle in home appliances.

半導体実装基板を用いた発光装置の説明図である。It is explanatory drawing of the light-emitting device using a semiconductor mounting board. 半導体実装基板、その分解斜視図及び基板実装されたヒートシンクの部分断面図である。FIG. 4 is a semiconductor mounting substrate, an exploded perspective view thereof, and a partial cross-sectional view of the heat sink mounted on the substrate. 圧縮成形法によるモールド金型の断面説明図である。It is sectional explanatory drawing of the mold metal mold | die by a compression molding method. 半導体実装基板の製造工程を示す斜視図である。It is a perspective view which shows the manufacturing process of a semiconductor mounting board | substrate. 金属枠体に囲まれた成形品の平面図及び側面断面図、成形品の側面断面図である。It is the top view and side sectional view of the molded product surrounded by the metal frame, and the side sectional view of the molded product. 他例に係る成形品の平面図である。It is a top view of the molded product which concerns on another example. トランスファー成形によるモールド金型の平面図、断面図及び成形品の側面断面図である。It is a top view of a mold metallic mold by transfer molding, a sectional view, and a side sectional view of a molded product.

符号の説明Explanation of symbols

1 基板
1a 実装面
1b 放熱面
2 半導体装置
3 貫通孔
4 突部
5 ヒートシンク
5a 平板部
5b 外周縁部
5c だれ部
5d 面取り部
6 シリコン伝熱シート
7 封止樹脂
8 放熱フィン
9 冷却ファン
10 ヒートパイプ
11 接続部材
12,19 モールド金型
13 耐熱性シート
14 金属枠体
14a 中心孔
14b 凹部
15,20 上型
15a 上型クランプ面
16,23 下型
16a 下型クランプ面
17 ダム部
18 成形品
20 金型カル
21 金型ランナゲート
24 ポット
25 プランジャ
26 取付ブロック
27 半導体チップ
28 レンズキャップ
DESCRIPTION OF SYMBOLS 1 Board | substrate 1a Mounting surface 1b Heat radiation surface 2 Semiconductor device 3 Through-hole 4 Projection part 5 Heat sink 5a Flat plate part 5b Outer peripheral edge part 5c Dripping part 5d Chamfer part 6 Silicon heat transfer sheet 7 Sealing resin 8 Radiation fin 9 Cooling fan 10 Heat pipe DESCRIPTION OF SYMBOLS 11 Connection member 12,19 Mold die 13 Heat resistant sheet 14 Metal frame 14a Center hole 14b Recess 15,20 Upper mold 15a Upper clamp surface 16,23 Lower mold 16a Lower clamp surface 17 Dam part
18 Molded products
20 Mold Cull 21 Mold Runner Gate
24 pots
25 Plunger
26 Mounting Block 27 Semiconductor Chip 28 Lens Cap

Claims (5)

半導体装置が実装される部位に当該半導体装置の実装面積より小さい貫通孔が形成された実装基板と、
前記実装基板の半導体装置実装面とは反対面側に前記貫通孔に突部を嵌め込まれて前記半導体装置と直接若しくは間接に当接可能に組み付けられ、外周縁部にはだれ部若しくは面取り部が形成され前記半導体装置の実装面積より大きい平板部を有するヒートシンクと、を備え、
前記ヒートシンクは平板部を基板反対面側に露出し周囲を封止樹脂に封止され前記だれ部若しくは面取り部の表面側に封止樹脂を充填して前記基板と一体に抜け止め保持されている半導体実装基板。
A mounting substrate in which a through hole smaller than the mounting area of the semiconductor device is formed in a portion where the semiconductor device is mounted;
A protrusion is fitted into the through-hole on the side opposite to the semiconductor device mounting surface of the mounting substrate, and is assembled so as to be able to contact the semiconductor device directly or indirectly, and a drooping portion or a chamfered portion is formed at the outer peripheral edge portion. And a heat sink having a flat plate portion larger than the mounting area of the semiconductor device ,
The heat sink is held retained the sealed around the sealing resin exposed flat portion on the substrate surface opposite to fill the sagging portion or the sealing resin on the surface side of the chamfered portion integrally with the substrate Semiconductor mounting board.
前記ヒートシンクは単数若しくは複数設けられ、平板部の総面積は周囲の封止樹脂の面積と等しくなるように形成されている請求項1記載の半導体実装基板。   The semiconductor mounting substrate according to claim 1, wherein one or a plurality of the heat sinks are provided, and the total area of the flat plate portions is equal to the area of the surrounding sealing resin. 前記ヒートシンクは、平板部に取り付けられた放熱フィン若しくは平板部に接続するヒートパイプを介して放熱フィンと接続されている請求項1又は請求項2記載の半導体実装基板。   The semiconductor mounting substrate according to claim 1, wherein the heat sink is connected to the heat radiating fins through heat radiating fins attached to the flat plate portion or heat pipes connected to the flat plate portion. 金属枠体の一方の面に中心孔を塞いで耐熱性シートを貼り付ける工程と、
前記金属枠体の中心孔を塞いで凹部が形成された耐熱シート上に、半導体装置が実装される実装位置に貫通孔が形成され該貫通孔に突部を嵌め込ませてヒートシンクが組み付けられた実装基板を実装面を下向きして載置する工程と、
前記金属枠体及び封止樹脂をモールド金型へ搬入し若しくは前記ヒートシンクの周囲の実装基板上に封止樹脂を供給してから前記金属枠体をモールド金型へ搬入する工程と、
前記モールド金型により実装基板及び金属枠体をクランプし、前記ヒートシンクの周囲の隙間に封止樹脂を加熱加圧しながら充填して硬化させる工程と、
を含む半導体実装基板の製造方法。
A step of closing the central hole on one surface of the metal frame and attaching a heat-resistant sheet;
A mounting in which a through hole is formed at a mounting position where a semiconductor device is mounted on a heat-resistant sheet in which a recess is formed by closing the central hole of the metal frame, and a heat sink is assembled by fitting a protrusion into the through hole Placing the substrate with the mounting surface facing down;
Carrying the metal frame and the sealing resin into a mold or supplying the sealing resin onto a mounting substrate around the heat sink and then carrying the metal frame into the mold;
Clamping the mounting substrate and the metal frame with the mold, and filling and curing the sealing resin in the gap around the heat sink while heating and pressing; and
A method for manufacturing a semiconductor mounting board including:
前記モールド金型の一方のクランプ面にはダム部が突設されており、当該モールド金型が金属枠体及び実装基板をクランプすると耐熱性シートで覆われたダム部が基板側面に当接する請求項4記載の半導体実装基板の製造方法。   A dam part protrudes from one clamping surface of the mold, and when the mold mold clamps the metal frame and the mounting board, the dam part covered with the heat-resistant sheet contacts the side surface of the board. Item 5. A method for manufacturing a semiconductor mounting substrate according to Item 4.
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