JP5121221B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5121221B2
JP5121221B2 JP2006335526A JP2006335526A JP5121221B2 JP 5121221 B2 JP5121221 B2 JP 5121221B2 JP 2006335526 A JP2006335526 A JP 2006335526A JP 2006335526 A JP2006335526 A JP 2006335526A JP 5121221 B2 JP5121221 B2 JP 5121221B2
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Prior art keywords
film
electrode
region
drain electrode
liquid crystal
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JP2006335526A
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Japanese (ja)
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JP2007199687A (ja
JP2007199687A5 (enExample
Inventor
邦雄 細谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006335526A priority Critical patent/JP5121221B2/ja
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Publication of JP2007199687A5 publication Critical patent/JP2007199687A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2006335526A 2005-12-26 2006-12-13 半導体装置 Active JP5121221B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006335526A JP5121221B2 (ja) 2005-12-26 2006-12-13 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005372586 2005-12-26
JP2005372586 2005-12-26
JP2006335526A JP5121221B2 (ja) 2005-12-26 2006-12-13 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012063042A Division JP5417473B2 (ja) 2005-12-26 2012-03-21 半導体装置の作製方法

Publications (3)

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JP2007199687A JP2007199687A (ja) 2007-08-09
JP2007199687A5 JP2007199687A5 (enExample) 2009-11-12
JP5121221B2 true JP5121221B2 (ja) 2013-01-16

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ID=38454316

Family Applications (1)

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JP2006335526A Active JP5121221B2 (ja) 2005-12-26 2006-12-13 半導体装置

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JP (1) JP5121221B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629705B2 (en) 2017-02-13 2020-04-21 Samsung Display Co., Ltd. Semiconductor device having overlapping semiconductor patterns and method of fabricating the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5292066B2 (ja) 2007-12-05 2013-09-18 株式会社半導体エネルギー研究所 表示装置
KR101999970B1 (ko) * 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN101719493B (zh) 2008-10-08 2014-05-14 株式会社半导体能源研究所 显示装置
EP2180518B1 (en) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
CN103984176B (zh) * 2009-10-09 2016-01-20 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
JP5679143B2 (ja) * 2009-12-01 2015-03-04 ソニー株式会社 薄膜トランジスタならびに表示装置および電子機器
US8598586B2 (en) * 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5821481B2 (ja) * 2011-09-30 2015-11-24 東レ株式会社 ネガ型感光性樹脂組成物およびそれを用いた保護膜およびタッチパネル部材
TWI782259B (zh) 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP7508336B2 (ja) * 2020-10-26 2024-07-01 株式会社ジャパンディスプレイ 半導体基板及び表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996030801A1 (en) * 1995-03-29 1996-10-03 Hitachi, Ltd. Liquid crystal display
JP3582193B2 (ja) * 1995-12-08 2004-10-27 カシオ計算機株式会社 液晶表示素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629705B2 (en) 2017-02-13 2020-04-21 Samsung Display Co., Ltd. Semiconductor device having overlapping semiconductor patterns and method of fabricating the same
US11289588B2 (en) 2017-02-13 2022-03-29 Samsung Display Co., Ltd. Semiconductor device including two thin-film transistors and method of fabricating the same
US11908924B2 (en) 2017-02-13 2024-02-20 Samsung Display Co., Ltd. Semiconductor device including two thin-film transistors and method of fabricating the same

Also Published As

Publication number Publication date
JP2007199687A (ja) 2007-08-09

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