JP5105729B2 - ガスクラスターイオンビームによる加工方法 - Google Patents

ガスクラスターイオンビームによる加工方法 Download PDF

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Publication number
JP5105729B2
JP5105729B2 JP2005253529A JP2005253529A JP5105729B2 JP 5105729 B2 JP5105729 B2 JP 5105729B2 JP 2005253529 A JP2005253529 A JP 2005253529A JP 2005253529 A JP2005253529 A JP 2005253529A JP 5105729 B2 JP5105729 B2 JP 5105729B2
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Japan
Prior art keywords
ionizer
potential
skimmer
cluster
processed
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Expired - Fee Related
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JP2005253529A
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English (en)
Japanese (ja)
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JP2007066796A (ja
JP2007066796A5 (enExample
Inventor
中村　　聡
耕治 木谷
哲郎 齊藤
洋一 福宮
辰美 庄司
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Canon Inc
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Canon Inc
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Priority to JP2005253529A priority Critical patent/JP5105729B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

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  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
JP2005253529A 2005-09-01 2005-09-01 ガスクラスターイオンビームによる加工方法 Expired - Fee Related JP5105729B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005253529A JP5105729B2 (ja) 2005-09-01 2005-09-01 ガスクラスターイオンビームによる加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005253529A JP5105729B2 (ja) 2005-09-01 2005-09-01 ガスクラスターイオンビームによる加工方法

Publications (3)

Publication Number Publication Date
JP2007066796A JP2007066796A (ja) 2007-03-15
JP2007066796A5 JP2007066796A5 (enExample) 2008-10-16
JP5105729B2 true JP5105729B2 (ja) 2012-12-26

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JP2005253529A Expired - Fee Related JP5105729B2 (ja) 2005-09-01 2005-09-01 ガスクラスターイオンビームによる加工方法

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JP (1) JP5105729B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110240602A1 (en) * 2010-03-30 2011-10-06 Tel Epion Inc. High-voltage gas cluster ion beam (gcib) processing system
WO2014130979A1 (en) * 2013-02-25 2014-08-28 Exogenesis Corporation Defect reduction in a substrate treatment method
JP5404950B1 (ja) 2012-07-18 2014-02-05 ラボテック株式会社 堆積装置および堆積方法
CN107148652B (zh) * 2014-09-16 2021-02-12 阿格尼能源有限公司 阿尔文波旋转式非线性惯性约束反应堆
WO2016158054A1 (ja) * 2015-03-30 2016-10-06 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4168381B2 (ja) * 2000-12-26 2008-10-22 ティーイーエル エピオン インク． ガスクラスターイオンビームのための充電制御および線量測定システム
JP4299618B2 (ja) * 2003-09-19 2009-07-22 株式会社アルバック ガスクラスターイオンビーム装置
JP4485164B2 (ja) * 2003-09-26 2010-06-16 兼治 隅山 軟磁性材料の製造方法及び製造装置

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Publication number Publication date
JP2007066796A (ja) 2007-03-15

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