JP5081267B2 - Circuit component built-in module and method for manufacturing circuit component built-in module - Google Patents

Description

  The present invention relates to a circuit component built-in module and a method for manufacturing a circuit component built-in module.

  With recent downsizing, thinning and higher functionality of electronic equipment, there is a demand for higher density mounting of electronic components mounted on printed circuit boards and higher functionality of circuit boards mounted with electronic components. It is getting stronger and stronger. Under such circumstances, a component-embedded substrate in which an electronic component is embedded in the substrate has been developed (see, for example, Patent Document 1).

  In a component-embedded board, active parts (for example, semiconductor elements) and passive parts (for example, capacitors) mounted on the surface of a printed circuit board are usually embedded in the board, so that the area of the board can be reduced. it can. In addition, since it is possible to increase the degree of freedom in arranging electronic components as compared with the case of surface mounting, improvement of high frequency characteristics can be expected by optimizing the wiring between the electronic components.

  Today, in the field of ceramic substrates, LTCC (low temperature cofired ceramics) substrates with built-in electronic components have been put into practical use, but this is difficult to apply to large substrates because it is heavy and fragile, and high temperature processing Therefore, there are significant restrictions such as the inability to incorporate semiconductor elements such as LSI.

  Therefore, recently, a component-embedded substrate in which components are embedded in a printed circuit board using resin is different from an LTCC substrate, and there are few restrictions on the size of the substrate, and an LSI can be incorporated. It has the advantage of being.

  Next, a component built-in substrate (circuit component built-in module) disclosed in Patent Document 1 will be described with reference to FIG. The circuit component built-in module 400 shown in FIG. 9 includes a substrate 401 in which insulating substrates 401a, 401b, and 401c are stacked, wiring patterns 402a, 402b, 402c, and 402d formed on the main surface and inside of the substrate 401, The circuit components 403a and 403b are arranged inside 401 and connected to a wiring pattern. The wiring patterns 402a, 402b, 402c and 402d are electrically connected by an inner via 404, and the insulating substrates 401a, 401b and 401c are made of a mixture containing an inorganic filler and a thermosetting resin. Yes. The electrical connection by the inner via connection method is an effective structure for shortening the wiring because the interlayer connection can be made at a desired position.

  In the case of using the inner via connection method, a method of filling the inner via with a conductive resin composition by a screen printing method is disclosed (for example, see Patent Document 2). At that time, by using a porous base material as the material constituting the insulating substrate, the pores of the porous material are crushed in the pressurizing and heating process, the compressibility in the thickness direction (Z direction) is increased, and the conductivity is increased. A method for increasing the electrical conductivity of the resin composition is disclosed.

  Also, in order to fill the inner via with the conductive resin composition by screen printing, the process of attaching a cover film to the insulating substrate, the process of drilling, the process of filling the conductive resin composition, and peeling the cover film It is disclosed to use the process of.

Japanese Patent Laid-Open No. 11-220262 JP-A-6-268345

  However, conventionally, the substrate used in the inner via hole connection method has been composed of a resin-based material that is a porous material, and thus has a problem of low thermal conductivity. In the module with built-in circuit components, the higher the mounting density of the circuit components, the more it is necessary to dissipate the heat generated from the components. However, conventional circuit boards cannot sufficiently dissipate heat, so circuit components are built in. Module reliability is reduced.

  On the other hand, if ceramic powder or the like is packed into the substrate material at a high density in order to increase the thermal conductivity, the compressibility in the Z direction is lowered, so that the conductivity of the conductive resin composition is lowered and the electrical There was a problem that the reliability of secure connections was reduced. In particular, in the circuit component built-in module, since the insulating resin layer becomes thick in order to incorporate the component as compared with a normal printed circuit board, it is a big problem that the compression rate in the Z direction is low.

  An object of the present invention is to provide a circuit component built-in module with improved heat dissipation and electrical connection reliability, and a method for manufacturing the same, in consideration of the problems of the conventional circuit component built-in module.

In order to achieve the above object, the first present invention provides:
A method for manufacturing a circuit component built-in module in which electrical interlayer connection is performed using a conductive composition,
An inner via forming step of forming one or a plurality of inner vias for providing a through hole in the thickness direction of the material of the insulating substrate and performing electrical interlayer connection;
A filling step of filling the inner via with a conductive composition;
A heating step of heating so that the diameter of the central portion of the inner via is shorter than the diameter of the opening;
A laminating step of arranging and laminating members on both surfaces of the material of the insulating substrate,
It is a manufacturing method of the circuit component built-in module provided with the pressurization heating process which pressurizes and heats the material of the laminated said insulating substrate, and said member.

The second aspect of the present invention is
An attaching step of attaching a cover film to the material of the insulating substrate;
After the heating step, further comprising a peeling step for peeling the cover film from the material of the insulating substrate,
The inner via forming step is a step of providing the through hole in the material of the insulating substrate together with the cover film,
The filling step is a method of manufacturing a circuit component built-in module according to the first aspect of the present invention, which is a step of filling the inner via with the conductive composition by a screen printing method.

The third aspect of the present invention
The inner via forming step is a method for manufacturing a circuit component built-in module according to the first or second aspect of the present invention, wherein the through hole is provided by punching.

The fourth aspect of the present invention is
A circuit component built-in module manufactured by the method for manufacturing a circuit component built-in module according to any one of the first to third aspects of the present invention,
The inner via is a circuit component built-in module in which the diameter of the central portion is 10% to 50% shorter than the diameter of the opening.

The fifth aspect of the present invention is
The insulating substrate is formed of a material containing an inorganic filler and a resin component,
The inorganic filler is contained in the material by 70 to 95% by weight,
The resin component includes a thermosetting resin and a rubber component,
The rubber component is a circuit component built-in module according to the fourth aspect of the present invention, which has a molecular weight of 50,000 or more and is contained in the resin in an amount of 20 wt% to 60 wt%.

The sixth aspect of the present invention
A circuit component built-in module according to a fourth aspect of the present invention, wherein circuit components are disposed in all or part of the inner via.

The seventh aspect of the present invention
A component insertion step of inserting circuit components into all or part of the inner via;
A sandwiching step of heating so that the diameter of the central portion of the inner via is shorter than the diameter of the opening so as to sandwich the inserted circuit component;
The filling step is a method of manufacturing a circuit component built-in module according to the first aspect of the present invention, which is a step of filling the conductive composition into the inner via into which the component is inserted.

  According to the present invention, it is possible to provide a circuit component built-in module with improved heat dissipation and electrical connection reliability and a method for manufacturing the same.

Cross-sectional configuration diagram of a circuit component built-in module according to Embodiment 1 of the present invention (A)-(g) Sectional block diagram for demonstrating each process of the manufacturing method of the circuit component built-in module in Embodiment 1 of this invention. Sectional block diagram of the circuit component built-in module in a modification of the first embodiment of the present invention Sectional block diagram of the circuit component built-in module in a modification of the first embodiment of the present invention Sectional block diagram of the circuit component built-in module according to Embodiment 2 of the present invention Electron micrograph showing a partially enlarged cross section of the circuit component built-in module according to Embodiment 2 of the present invention. (A)-(h) Cross-sectional block diagram for demonstrating each process of the manufacturing method of the circuit component built-in module in Embodiment 2 of this invention. Cross-sectional configuration diagram for explaining the structure of the sample of Example 1 The figure which shows the structure of the conventional circuit component built-in module

  Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings.

(Embodiment 1)
A circuit component built-in module according to the first embodiment of the present invention will be described.

  FIG. 1 is a cross-sectional configuration diagram of a circuit component built-in module according to the first embodiment. As shown in FIG. 1, the circuit component built-in module 100 according to this embodiment includes a first substrate 101, a second substrate 108, and a component built-in layer 110 sandwiched between the first substrate 101 and the second substrate 108. It has been. Substrate electrodes 102 are respectively formed on the main surfaces of the first substrate 101 and the second substrate 108 on the component built-in layer 110 side.

  The component built-in layer 110 includes an electrically insulating substrate 104 which is an example of an insulating substrate of the present invention, a semiconductor chip 105 and a chip component 106 disposed therein, and a substrate of the first substrate 101 and the second substrate 108. The inner via 103 is used to electrically connect the electrode 102. The semiconductor chip 105 and the chip component 106 are mounted on the substrate electrode 102 of the first substrate 101, and the semiconductor chip 105 is mounted using wire bonding. The semiconductor chip 105 is covered with a sealing resin 109.

  Further, in the inner via 103, the width of the central portion 103a in the thickness direction (Z direction in the drawing) of the electrically insulating substrate 104 is narrower than that of the opening 103b.

  Next, a method for manufacturing the circuit component built-in module according to the first embodiment will be described.

  FIGS. 2A to 2G are cross-sectional views showing an embodiment of a method for manufacturing the circuit component built-in module 100. 2A to 2G, the semiconductor chip 105 and the chip component 106 shown in FIG. 1 are omitted.

  First, as shown in FIG. 2A, a plate-shaped electrically insulating substrate material 202 is formed by processing a mixture containing an inorganic filler and a resin component, a thermosetting resin, a curing agent, and a rubber component. Is done. The electrically insulating substrate material 202 can be formed by mixing an inorganic filler, an uncured thermosetting resin, and the like into a paste-like kneaded product, and molding the paste-like kneaded product to a certain thickness. The electrically insulating substrate material 202 forms the electrically insulating substrate 104 shown in FIG. 1 by thermosetting the thermosetting resin after the pressurizing and heating step shown in FIG. . The electrically insulating substrate material 202 corresponds to an example of the material of the insulating substrate of the present invention.

  Cover films 201 are arranged on both surfaces of the plate-like electrically insulating substrate material 202, and a plate-like member 210 is created. For the cover film 201, for example, a film of polyethylene terephthalate or polyphenylene sulfite can be used. Thus, the process of sticking the cover film 201 to the electrically insulating substrate material 202 corresponds to an example of the sticking process of the present invention.

  Thereafter, as shown in FIG. 2B, by forming a through hole at a desired position of the plate-like member 210, the plate-like member 211 in which the inner via 103 is formed is manufactured. The inner via 103 can be formed by, for example, laser processing, drill processing, or die processing using a puncher. The step of forming the through hole corresponds to an example of the inner via forming step of the present invention.

  As the processing for forming the inner via 103, punching by puncher is more preferable because it has the effect of accumulating strain in the electrically insulating substrate material 202 and making the inner via diameter smaller than the subsequent heating step. When the inner via 103 is formed by punching, as shown in FIG. 2 (b), the via is processed in a straight shape having the same diameter as the punching die pin. Since the material is processed by applying compressive stress to the material, strain is accumulated in the material. Therefore, the distortion of the inner via 103 is reduced by the heating process described later, so that the diameter of the central portion 103a in the Z direction (see FIG. 2D) is shorter than that of the opening 103b. I can do it. However, in the case of an electrically insulating substrate containing a large amount of a rubber component, the via diameter may be reduced by releasing strain immediately after processing.

  Thereafter, as shown in FIG. 2C, the inner via 103 is filled with the conductive resin composition 111 ′, and the plate-like member 212 is manufactured. For filling the conductive resin composition 111 ′, the electrically insulating substrate material 202 having the inner via 103 is placed on a table of a printing machine (not shown), and the conductive resin composition 111 ′ is directly covered with the cover film 201. Printed from above. At this time, the cover film 201 on the upper surface plays the role of a printing mask and the prevention of contamination of the surface of the electrically insulating substrate material 202. The step of filling the inner via 103 with the conductive resin composition 111 'corresponds to an example of the filling step of the present invention. In addition, the conductive resin composition 111 ′ is a conductive resin composition shown in FIG. 1 by thermosetting the contained thermosetting resin after the pressurization and heating step shown in FIG. 111 is formed.

  At this time, the surface shape of the conductive resin composition 111 ′ is such that the printed surface side (refer to the surface 220 in FIG. 2 (c)) is a concave shape due to the viscosity of the conductive resin composition, and the opposite surface side ( In FIG. 2C, the surface 221) is pushed down to the table surface of the printing press, and thus has a flat shape.

  Thereafter, as shown in FIG. 2D, the plate member 212 is subjected to heat treatment, so that the diameter of the hole in the central portion 103a in the Z direction of the inner via 103 is contracted compared to the opening 103b. The plate-like member 213 in which the functional resin composition 111 ′ protrudes from the surfaces 213 a and 213 b is produced. Here, if the heating temperature and time in this heat treatment step are too long, the B-stage-state electrically insulating substrate material 202 is cured, and the adhesive strength in the subsequent pressure heating step shown in FIG. Since it falls, it is preferable to suppress to such an extent that hardening does not advance too much. Since the diameter of the hole in the central portion 103a of the inner via 103 is reduced by releasing strain in the electrically insulating substrate material 202 in the heat treatment step, this heat treatment step should be performed at a high temperature and in a short time. Is preferred.

  Thus, by heating the inner via 103 after filling the conductive resin composition 111 ′, the diameter of the central portion 103 a of the inner via 103 is reduced, and the filled conductive resin composition 111 ′ The shape is pushed out and protrudes from the opening 103 b of the inner via 103. The process of applying this heating corresponds to an example of the heating process of the present invention.

  After that, as shown in FIG. 2E, the cover film 201 is peeled from the electrically insulating substrate material 202, and the plate-like member 214 from which the conductive resin composition 111 ′ protrudes from the electrically insulating substrate material 202 is formed. Produced. The protruding portion of the conductive resin composition 111 ′ is shown as a protruding portion 205. The process of peeling the cover film 201 corresponds to an example of the peeling process of the present invention.

  Here, conventionally, when the cover film 201 is peeled off, the conductive resin composition 111 ′ in the inner via 103 may be caught by the cover film 201 and fall off. Since the shape of the via 103 is such that the central portion 103a is narrower than the opening 103b, the friction between the conductive resin composition 111 ′ and the inner via 103 is increased. Omission of the composition 111 ′ can be suppressed.

  The protruding portion 205 of the conductive resin composition 111 ′ shown in FIG. 2 (e) greatly affects the reliability of electrical connection in the inner via 103. As shown in FIG. 2G, since the substrate electrode 102 is finally embedded, the conductive resin composition 111 has a thickness corresponding to the protruding portion 205 and the substrate electrode 102 of the conductive resin composition 111 ′. 'Will be compressed. Basically, the larger the amount of compression, the larger the contact area between the conductive filler in the conductive resin composition 111 ′ and the substrate electrode 102 and the contact area between the conductive fillers. And the quality of the inner via becomes high.

  However, if the substrate electrode 102 is thickened, there is a limitation because the substrate pattern cannot be made fine. Further, when the substrate electrode 102 is thick, there is a gap between the substrate electrode 102 and the electrically insulating substrate material 202 if the resin flow of the electrically insulating substrate material 202 is insufficient when the substrate electrode 102 is embedded in the electrically insulating substrate material 202. Occurs, which causes insulation deterioration.

  In addition, the protruding portion 205 of the conductive resin composition 111 ′ can be enlarged by increasing the thickness of the cover film 201, but when the cover film 201 is peeled off, the cover film 201 and the conductive resin composition 111 ′ Friction increases and the above-described conductive resin composition 111 ′ is likely to fall off.

  Therefore, in the present embodiment, by narrowing the diameter of the central portion 103a of the inner via 103, the protruding portion 205 of the conductive resin composition 111 ′ can be enlarged, the above problem is solved, and the protruding portion, It becomes possible to increase the compression rate, and exhibits the effect of obtaining high conductivity.

  Thereafter, as shown in FIGS. 2 (f) and 2 (g), the circuit board is embedded by pressurizing and stacking the first substrate 101, the second substrate 108 and the plate-like member 214. After the plate-like body is formed, by heating the plate-like body, the thermosetting resin in the electrically insulating substrate material 202 is cured, and the electrically insulating substrate 104 is formed. In the conductive resin composition 111 ′ The thermosetting resin is also cured, and a circuit component built-in module with a built-in circuit component is produced. In FIG. 2, the semiconductor chip 105 and the chip component 106 are omitted. However, the first semiconductor chip 105 and the chip component are mounted on the substrate electrode 102 of the second substrate 108 in FIG. The substrate 101, the plate-like member 213, and the second substrate 108 may be pressurized. During pressurization, the semiconductor chip 105 is preferably covered with a sealing resin 109 (see FIG. 1) for protection. As shown in FIG. 2F, the step of aligning and stacking the first substrate 101, the second substrate 108, and the plate member 214 corresponds to an example of the stacking step of the present invention. Moreover, the process of pressurizing and heating the stacked ones corresponds to an example of the pressurizing and heating process of the present invention. Moreover, the 1st board | substrate 101 and the 2nd board | substrate 108 correspond to an example of the member of this invention.

The heating is performed at a temperature (for example, 150 ° C. to 260 ° C.) equal to or higher than the temperature at which the thermosetting resin in the electrically insulating substrate material 202 and the conductive resin composition 111 ′ is cured. By this heating, the substrate electrode 102, the circuit components (semiconductor chip 105, chip component 106), and the electrically insulating substrate 104 are mechanically firmly bonded. Further, the substrate electrode 102 of the first substrate 101 and the substrate electrode 102 of the second substrate 108 are electrically connected by the conductive resin composition 111 in the inner via 103. Incidentally, when curing an electrically insulating substrate material 202 and a thermosetting resin of the conductive resin composition 111 'by heating, by pressing at a pressure of 10kg / cm ² ~200kg / cm ² while heating, The mechanical strength of the circuit component module can be improved (the same applies to the following embodiments).

  In the circuit component built-in module 100 shown in the first embodiment, the heat generated by the circuit component (semiconductor chip 105) is quickly conducted because the inorganic filler contained in the electrically insulating substrate 104 provides high thermal conductivity. Is done. Therefore, a highly reliable circuit component built-in module can be obtained.

  Further, in the circuit component built-in module 100, the shape of the inner via 103 that performs interlayer connection to the electrically insulating substrate 104 is such that the diameter of the central portion 103a in the thickness direction of the electrically insulating substrate 104 is larger than the diameter of the opening 103b. The inner via is processed to be shorter.

  Thus, since the protruding portion 205 of the conductive resin composition 111 ′ is formed by reducing the central portion 103 a of the inner via 103, the Z direction of the conductive resin composition 111 ′ ( The compressibility in the thickness direction) is increased, and high conductivity is obtained.

  In addition, since the central portion 103a of the inner via 103 becomes smaller, the friction between the wall surface of the inner via 103 and the conductive resin composition 111 ′ increases, and the inner via 103 is subjected to a long-term reliability test such as a thermal shock test. By maintaining the adhesion strength between the wall surface and the conductive resin composition 111 ′, the occurrence of cracks can be suppressed, and the reliability of the inner via is improved.

  Furthermore, by adding a rubber component to the material forming the electrically insulating substrate 104, the strain accumulated by punching can be increased, and the diameter of the central portion 103a of the inner via 103 can be further reduced. It is possible to increase the amount of the conductive resin composition protruding from the opening of the inner via. Therefore, since the compressibility of the conductive resin composition in the pressurizing and heating step shown in FIG. 2 (g) can be increased, the conductivity can be improved.

  Further, in the circuit component built-in module 100 shown in the first embodiment, the upper and lower substrate electrodes 102 are connected by the inner vias 103 filled in the through holes of the electrically insulating substrate 104, and the heat dissipation is excellent. Therefore, in the circuit component built-in module 100, circuit components can be mounted with high density.

  Next, the configuration of the circuit component built-in module 100 of the first embodiment and the details of the manufacturing method will be described.

  As described above, the electrically insulating substrate 104 is formed from a mixture including an inorganic filler and a resin component, and the resin component includes a thermosetting resin, a curing agent, and a rubber component. And it is preferable that this mixture contains 70 wt% to 95 wt% of the inorganic filler. Furthermore, it is more preferable that a rubber component having a molecular weight of 50,000 or more is contained in the resin component (resin component is 100) in an amount of 20 wt% to 60 wt%.

  In addition, the thermosetting resin used in the present invention is not particularly limited, but an epoxy resin is preferable, and it is possible to use a mixture of a resin that is liquid at room temperature and a resin that is solid at room temperature. preferable. Examples of the liquid resin include Epicoat 828, Epicoat 815 (manufactured by Japan Epoxy Resin Co., Ltd.), Epicron 850, Epicron 840 (manufactured by Dainippon Ink & Chemicals), WE-2025 (manufactured by Nippon Pernox). Examples of the solid resin include 1001, 1002, and 1003 (manufactured by Japan Epoxy Resin Co., Ltd.).

  Resin that is liquid at normal temperature and resin that is solid at normal temperature have greatly different elastic moduli in the B-stage state of the electrically insulating substrate. For example, when an insulating substrate is formed using only a liquid resin, the elastic modulus becomes too large in the B-stage state, so that the hole diameter may not be maintained during punching for forming the inner via. In addition, when an insulating substrate is formed using only a solid resin, the elastic modulus is small in the B-stage state, so that distortion during punching does not increase, and the heating process after punching (see FIG. 2D) This reduces the effect of reducing the hole diameter.

  Moreover, as a hardening | curing agent, it is more preferable to use a latent hardening | curing agent from the storage stability of material. Examples of the latent curing agent include dicyanciamide as a typical latent curing agent, and include 2200 to 2227 (manufactured by Three Bond Co., Ltd.).

  Moreover, the reason why a rubber component having a molecular weight of 50,000 or more is added as a resin component is that a liquid epoxy resin alone may not ensure an elastic modulus that effectively reduces the diameter of the hole during heating. is there. If the amount of the rubber component in the resin component is less than 20% by weight, the effect of increasing the elastic modulus may not be exhibited. If the amount exceeds 60% by weight, the elastic modulus becomes too high and the hole diameter may not be maintained during punching. . Therefore, the amount of the rubber component in the resin component is preferably 20% by weight or more and 60% by weight or less. The rubber component is preferably an acrylic rubber containing 1 to 10 mol% of an epoxy group. The terminal epoxy group of the rubber component is involved in the curing, preventing a rapid decrease in Tg (glass transition point) upon curing due to the addition of the rubber component, and further improving the compatibility with the epoxy. Examples of such a rubber component include HTR-860P-3 (manufactured by Teikoku Chemical Industry Co., Ltd.).

The inorganic filler that enhances the heat dissipation of the electrically insulating substrate 104 preferably includes at least one inorganic filler selected from Al ₂ O ₃ , MgO, BN, AlN, and SiO ₂ . By using these inorganic fillers, an electrically insulating substrate excellent in heat dissipation can be obtained. Moreover, when MgO is used as the inorganic filler, the linear expansion coefficient of the electrically insulating substrate can be increased. In addition, when SiO ₂ (particularly amorphous SiO ₂ ) is used as the inorganic filler, the dielectric constant of the electrically insulating substrate can be reduced. Moreover, when BN is used as the inorganic filler, the linear expansion coefficient can be lowered.

  The inorganic filler is preferably contained in an amount of 70% to 95% by weight with respect to the mixture forming the electrically insulating substrate 104. The shape of the inorganic filler is preferably spherical, and the average particle size is preferably 0.1 μm or more and 100 μm or less.

  When the amount of the inorganic filler in the mixture forming the electrically insulating substrate is 70% by weight or less, the fluidity of the resin mixture is large during pressurization and heating, and the film thickness in the B-stage state is likely to be uneven. . On the other hand, when it exceeds 95% by weight, it may be difficult to attach a cover film or the like. Furthermore, the flexibility in the B stage state is reduced, and cracks and the like are likely to occur during handling.

  Moreover, when the average particle diameter of an inorganic filler is 0.1 micrometer, it is difficult to add an inorganic filler so that 70 weight% may be contained in a mixture. When the average particle diameter of the inorganic filler is 100 μm or more, the workability of punching hole processing may be hindered. In addition, as the particle size distribution of the inorganic filler, a two-peak distribution in which a small-diameter filler and a large-diameter filler are mixed is preferable. By setting the double distribution, it is possible to achieve both high filling of the filler and fluidity of the resin mixture in the B-stage state. The distribution is not limited to two mountains, but may be more than that. Examples of such inorganic fillers include AS-20 and AS-50 (manufactured by Showa Denko KK). Moreover, it is preferable to add a silane coupling agent in order to modify the surface of the inorganic filler and improve dispersibility. Examples of the silane coupling agent include A-187, A-189, A-1100, A-1160 (manufactured by Nippon Unicar Co., Ltd.) and the like.

  Note that the mixture forming the insulating substrate may further contain a dispersant, a colorant, and a release agent.

  The substrate electrode 102 is made of a material having electrical conductivity, and is made of, for example, a copper foil or a conductive resin composition. When using a copper foil as the substrate electrode, for example, a copper foil having a thickness of about 18 μm to 35 μm manufactured by electrolytic plating can be used. The copper foil desirably has a roughened surface in contact with the electrically insulating substrate 104 in order to improve adhesion to the electrically insulating substrate 104. Further, for the copper foil, a copper foil surface that has been subjected to coupling treatment or a copper foil surface that is plated with tin, zinc, or nickel may be used in order to improve adhesion and oxidation resistance. The substrate electrode 102 may be a metal plate lead frame formed by etching or punching.

  In the present embodiment, a semiconductor chip 105 that is an active component and a chip component 106 that is a passive component are built in the electrically insulating substrate 104 as circuit components, but only one of the active component and the passive component is included. It may be built in.

  As the active component, for example, a semiconductor element such as a transistor, IC, or LSI is used. The semiconductor element may be a semiconductor bare chip. As the passive component, a chip resistor, a chip capacitor, a chip inductor, or the like is used.

  In the first embodiment, the semiconductor chip 105 is mounted on the substrate electrode 102 by wire bonding. However, the semiconductor chip 105 is not limited thereto, and may be mounted by, for example, flip chip bonding.

  Further, although the conductive resin composition 111 is used as the conductive material filled in the inner via 103, any thermosetting conductive material may be used (the same applies to the following embodiments). As the thermosetting conductive substance, for example, a conductive resin composition in which metal particles and a thermosetting resin are mixed can be used. As the metal particles, gold, silver, copper, nickel or the like can be used. Gold, silver, copper, or nickel is preferable because of its high conductivity, and copper is particularly preferable because of its high conductivity and low migration. As the thermosetting resin, for example, an epoxy resin, a phenol resin, or a cyanate resin can be used. Epoxy resins are particularly preferred because of their high heat resistance.

  In the present embodiment, the diameter of the central portion 103a of the inner via 103 is narrower than the diameter of the opening 103b, and the conductive resin composition 111 'is compared with the case where the shape of the inner via is straight. However, the reliability of the inner via 103 is more improved when the diameter of the central portion 103a in the Z direction is 10% to 50% shorter than the diameter of the opening 103b. Can be improved. For example, if it is 10% or less, the improvement in the compressibility in the Z direction is small, and the improvement in conductivity may not be observed. On the other hand, if it is reduced by 50% or more, it may be difficult to fill the conductive resin composition 111 ′.

  In the above embodiment, the inner via 103 is formed by punching, but may be formed by other processing methods (for example, laser processing, drill processing, etc.). However, in order to generate a larger strain by applying a larger compressive stress to the electrically insulating substrate material, it is more preferable to form it by punching.

  In the above embodiment, the inner via is filled with the conductive resin composition using the screen printing method. However, the present invention is not limited to this method. For example, by discharging the conductive resin, 1 You may fill the inner vias one by one.

  In the circuit component built-in module 100 shown in FIG. 1 in the first embodiment, the substrate electrode 102 is formed on the first substrate 101 and the second substrate 108 which are examples of the members of the present invention. Although shown, the first substrate 101 and the second substrate 108 may be omitted. FIG. 3 is a diagram showing a circuit component built-in module 250 in which the first substrate 101 and the second substrate 108 are not provided. When the circuit component built-in module 250 shown in FIG. 3 is manufactured, a release member provided with the substrate electrode 102 is disposed instead of the first substrate 101 and the second substrate 108 shown in FIG. And after performing the pressurization heating process shown in FIG.2 (g), the circuit component built-in module 250 is produced by peeling a mold release member from the electrically insulating board | substrate 104. FIG. In this case, the release member corresponds to an example of the member of the present invention.

  In FIG. 1, one component built-in layer 110 is formed sandwiched between substrate electrodes. However, the component built-in layer can be formed on the outer side so that the component built-in layer has a multilayer structure (see below). The same applies to the embodiments). FIG. 4 is a diagram showing a circuit component built-in module 260 having such a multilayer structure. In the circuit component built-in module 260 shown in FIG. 4, three component built-in layers 110, 261, and 262 are provided between the first substrate 101 and the second substrate 108.

  Further, in the circuit component built-in module 100 shown in FIG. 1, the circuit component is not mounted on the opposite side of the electrically insulating substrate 104 of the first substrate 101 and the second substrate 108. Components may be mounted. The same applies to the circuit component built-in module 260 of FIG. Further, in the circuit component built-in module 250 shown in FIG. 3, the case where the circuit component is not mounted on the surface of the substrate electrode 102 opposite to the electrically insulating substrate 104 is shown, but the circuit component may be mounted. . As a result, circuit components can be mounted at a higher density.

(Embodiment 2)
The circuit component built-in module according to the second embodiment of the present invention will be described below. The circuit component built-in module according to the second embodiment has the same basic configuration as that of the first embodiment, except that the circuit component is built in the inner via. For this reason, the second embodiment will be described focusing on the differences from the first embodiment. In addition, the same code | symbol is attached | subjected about the structure similar to Embodiment 1. FIG.

  FIG. 5 is a cross-sectional configuration diagram of the circuit component built-in module 300 of the second embodiment. FIG. 6 is an enlarged cross-sectional photograph of the chip component 107 disposed in the inner via 103.

  As shown in FIG. 5, the circuit component built-in module 300 of this embodiment includes a first substrate 101, a second substrate 108, and a component built-in layer formed between the first substrate 101 and the second substrate 108. 110 is provided. The component built-in layer 110 is disposed inside the electrically insulating substrate 104, the substrate electrode 102 provided on the electrically insulating substrate 104 side of the first substrate 101 and the second substrate 108, and the electrically insulating substrate 104. An inner via 103 formed to connect the semiconductor chip 105 and the chip component 106 and the substrate electrodes 102 of the first substrate 101 and the second substrate 108 are provided.

  Further, as shown in FIGS. 5 and 6, in the circuit component built-in module 300 of the second embodiment, a chip component 107 is provided in the inner via 103. In addition, electrodes 107 a of the chip component 107 are provided above and below the chip component 107, and are electrically connected to the substrate electrode 102 by the conductive resin composition 111 filled in the inner via 103.

  The materials such as the electrically insulating substrate and the conductive resin composition are the same as those described in the first embodiment. In the circuit component built-in module 300 shown in FIG. 5, the case where the substrate electrode 102 is formed on the first substrate 101 and the second substrate 108 is shown, but the first substrate 101 and the second substrate 108 are not provided. May be.

  Next, a method for manufacturing the circuit component built-in module 300 of the second embodiment will be described. FIGS. 7A to 7H are cross-sectional configuration diagrams for explaining a method for manufacturing the circuit component built-in module 300 of the second embodiment. 7A to 7H, the semiconductor chip 105 and the chip component 106 described with reference to FIG. 5 are omitted.

  First, as shown in FIG. 7A, a plate-shaped electrically insulating substrate material 202 is formed by processing a mixture containing an inorganic filler, a thermosetting resin, a curing agent, and a rubber component. The electrically insulating substrate material 202 can be formed by mixing an inorganic filler, an uncured thermosetting resin, and the like into a paste-like kneaded product, and molding the paste-like kneaded product to a certain thickness.

  Cover films 201 are arranged on both sides of the plate-like electrically insulating substrate material 202, and a plate-like member 210 is produced. For the cover film 201, for example, a film of polyethylene terephthalate or polyphenylene sulfite can be used. The process of disposing the cover film 201 on both surfaces of the electrically insulating substrate material 202 corresponds to an example of the attaching process of the present invention.

  Thereafter, as shown in FIG. 7B, by forming a through-hole at a desired position of the plate-like member 210, the plate-like member 211 in which the inner via 103 is formed is produced. The step of forming the through hole corresponds to an example of the inner via forming step of the present invention.

  Thereafter, as shown in FIG. 7C, the chip component 107 which is an example of the electronic component of the present invention is inserted into the desired inner via 103, and the plate-like member 312 into which the chip component 107 is inserted is manufactured. . The diameter of the hole of the inner via 103 is preferably larger than the size of the electronic component to be inserted. If the diameter of the hole is small, the wall surface of the inner via 103 is scraped when the electronic component is inserted. Therefore, scraps may accumulate around the component electrode, and the connection between the electronic component and the conductive resin composition may occur. May be inhibited. Thus, the process of inserting the chip component 107 into the inner via 103 corresponds to an example of the component insertion process of the present invention.

  Thereafter, as shown in FIG. 7D, the plate-like member 312 having the chip component 107 inserted therein is subjected to heat treatment to produce the plate-like member 313. By this heat treatment, the diameter of the central portion 103 a of the inner via 103 is contracted, so that the chip component 107 is sandwiched between the wall surfaces of the inner via 103 and the chip component 107 is fixed in the inner via 103. If the heating temperature and time in the heat treatment process are long, the diameter cannot be shrunk due to the heat treatment again in the subsequent process. Therefore, it is preferable to suppress the shrinkage to such an extent that the chip component 107 can be fixed. Thus, the process of clamping the chip component 107 by the wall surface of the inner via 103 by heat treatment corresponds to an example of the clamping process of the present invention.

  Thereafter, as shown in FIG. 7E, the inner via 103 is filled with a conductive resin composition 111 ′ to produce a plate-like member 314. The conductive resin composition 111 ′ is filled from both surfaces of the plate-like member 313 for electrical connection between the chip component 107 in the inner via 103 and the substrate electrode 102.

  After the conductive resin composition 111 ′ is filled from one side of the plate-like member 313 (see FIG. 7D) using a printing machine, the conductive resin composition 111 ′ is filled again by printing from the opposite side. Is called. At this time, if there is a gap between the chip part 107 and the wall surface of the inner via 103, the conductive resin composition 111 'flows out, causing a short circuit. Therefore, it is necessary to eliminate voids in the heat treatment step shown in FIG. The step of filling the conductive resin composition 111 ′ corresponds to an example of the filling step of the present invention.

  Thereafter, as shown in FIG. 7 (f), the plate-like member 315 in which the diameter of the central portion 103a of the inner via 103 is further contracted and the conductive resin composition 111 ′ is projected is produced by performing heat treatment again. Is done. If the heating temperature and time in this heat treatment process are too long, curing of the electrically insulating substrate material 202 in the B-stage state proceeds, and the adhesive strength in the subsequent pressure heating process decreases, so that the curing does not progress excessively. Is preferred. This second heat treatment step is preferably performed at a higher temperature than the first heat treatment step shown in FIG. This heat treatment process corresponds to an example of the heating process of the present invention.

  Thereafter, as shown in FIG. 7G, the cover film 201 is peeled from the plate-like member 315 shown in FIG. 7F, and the plate-like member 316 is produced. Conventionally, when the cover film 201 is peeled off, the conductive resin composition 111 ′ in the inner via 103 may be caught by the cover film 201 and fall off. In this embodiment, the chip component 107 can also fall off. However, since the diameter of the central portion 103a of the inner via 103 is narrower than that of the opening 103b, the friction between the wall surface, the conductive resin composition 111 ′ and the chip component 107 is increased, and the falling-off is suppressed. can do. The process of peeling the cover film 201 corresponds to an example of the peeling process of the present invention.

  Thereafter, as shown in FIG. 7 (h), the plate-like body in which the circuit components are embedded is obtained by pressurizing the first substrate 101, the second substrate 108, and the plate-like member 316 that are aligned and stacked. After being formed, this is heated to cure the thermosetting resin in the electrically insulating substrate material 202 and the conductive resin composition 111 ′, and the circuit component built-in module 300 in which the circuit components are embedded is manufactured. In addition, the process of aligning and overlapping the first substrate 101, the second substrate 108, and the plate-like member 316 in this way corresponds to an example of the stacking process of the present invention. Moreover, the process of pressurizing and heating the stacked ones corresponds to an example of the pressurizing and heating process of the present invention.

  As described above, in the circuit component built-in module according to the second embodiment, the electronic component is sandwiched between the inner vias by utilizing the contraction of the central portion of the inner via in the Z direction due to the heat treatment. Electronic components can be built in.

  Also, by performing the second heat treatment step as shown in FIG. 7 (f), the inner via further shrinks, and the compressibility of the conductive resin composition filled up and down of the electronic component can be increased. Therefore, the conductivity can be improved.

  In addition, after inserting the electronic component into the inner via, the center portion is reduced by performing a heat treatment, so the friction between the wall surface of the inner via and the inserted component is increased, and in the step of peeling the cover film, The possibility that a part once inserted into the inner via will fall out is reduced.

  Furthermore, after the electronic component is inserted into the inner via, the central portion of the inner via is reduced, so that the inserted electronic component and the wall surface of the inner via are in close contact with each other. The possibility that the composition enters the gap between the electronic component and the inner via and short-circuits is reduced.

  As described above, the inner via in the present embodiment is very suitable as a structure incorporating an electronic component.

  Hereinafter, specific examples of the present invention will be described.

Example 1
Example 1 is an example in which a circuit component built-in module is manufactured by the method described in the first embodiment.

  In this example, an epoxy resin (Epicoat 828) manufactured by Japan Epoxy Resin Co., Ltd. was used as the liquid epoxy resin. An epoxy resin (1001) manufactured by Japan Epoxy Resin Co., Ltd. was used as the solid resin. As the latent curing agent, a latent curing agent (2200) manufactured by Three Bond Co. was used. As a rubber component, an acrylic modified resin (HTR-860P-3) manufactured by Teikoku Chemical Industry Co., Ltd. was used.

As inorganic fillers, 85% by weight of Al ₂ O ₃ (mixed amount of AS-20 and AS-40 manufactured by Showa Denko KK), 2% by weight of liquid epoxy resin, and 6% by weight of solid epoxy resin. %, The rubber component was 6% by weight, the curing agent was 0.3% by weight, and the coupling agent (Ajinomoto Co., Inc., titanate, 46B) was mixed at 0.7% by weight.

  Next, a method for producing the plate-like member 210 shown in FIG.

  First, a predetermined amount of a paste-like mixture mixed in a solvent is dropped on a release film. This paste-like mixture is prepared by mixing an inorganic filler, a resin, and the like with a ball mill for about 60 minutes. As the release film, a polyethylene terephthalate film having a thickness of 75 μm is used, and the film surface is subjected to release treatment with silicon.

  Next, the paste-like mixture was applied onto the release film with a doctor blade to a thickness of 200 μm to obtain a plate-like mixture. Next, the plate-like mixture formed on the release film was heated together with the release film, and heat treatment was performed under conditions where the stickiness of the plate-like mixture disappeared. In the heat treatment, a temperature of 80 ° C. was maintained for 30 minutes. By this heat treatment, the adhesiveness of the plate-like mixture is lost, so that the release film can be easily peeled off.

Next, the release film is peeled off from the plate-like mixture, and four plate-like mixtures are stacked, and then sandwiched with a cover film (PPS: polyphenylene sulfite, thickness 16 μm) and applied at a pressure of 1 kg / cm ^2. By heating at a temperature of 80 ° C. while pressing, a plate-like member 210 was produced in which the cover film 201 was attached to a laminate of four plate-like mixtures (see FIG. 2A).

  Thus, an electrically insulating substrate material 202 having a thickness of about 800 μm and having a cover film 201 formed on both sides could be prepared. And the through-hole (diameter 0.25mm) for connecting an inner via hole using a puncher machine was formed in the electrically insulating board | substrate raw material 202 with the cover film (refer FIG.2 (b)).

  Subsequently, the through-hole was filled with the conductive resin composition 111 ′ by screen printing (see FIG. 2C). The conductive resin composition 111 ′ is composed of 85% by weight of spherical copper particles, 3% by weight of bisphenol A epoxy resin (Japan Epoxy Resin Epoxy, Epicoat 828), and glycidyl ester epoxy resin (manufactured by Toto Kasei, YD -171) 9% by weight and 3% by weight of amine adduct curing agent (Ajinomoto Co., MY-24) were prepared.

  Next, the electrically insulating substrate material 202 filled with the conductive resin composition was heated at 120 ° C. for 5 minutes. By this step, the diameter of the hole shrinks in the central portion 103a of the inner via 103, and the filled conductive resin composition protrudes (see FIG. 2D). At this time, the diameter of the hole in the central portion 103a is contracted by about 15 to 20% compared to the opening 103b.

Next, the cover film 201 is peeled from the electrically insulating substrate material 202 (see FIG. 2E), the first substrate 101 and the second substrate 108 on which the substrate electrode 102 is formed at a desired position, and the inner via 103. The electrically insulating substrate material 202 having the above structure was laminated (see FIG. 2 (f)), and this laminated body was heated under pressure at a press temperature of 180 ° C. and a pressure of 20 kg / cm ² for 60 minutes by a hot press.

  By this heating, the epoxy resin in the electrically insulating substrate material 202 and the epoxy resin in the conductive resin composition 111 ′ are cured, and the semiconductor element (see the semiconductor chip 105 in FIG. 1) in the electrically insulating substrate material 202. The substrate electrode 102 and the electrically insulating substrate material 202 were mechanically firmly connected. Further, by this heating, the conductive resin composition 111 ′ and the substrate electrode 102 were electrically (inner via connection) and mechanically connected, and a circuit component built-in module 270 as shown in FIG. 8 was produced.

  In this circuit component built-in module 270, 500 inner vias are connected in series, and 100 samples in which 500 such inner vias are connected in series were produced.

  In order to evaluate the reliability of the circuit component built-in module produced in this example, a solder reflow test and a temperature cycle test were performed. The solder reflow test was performed by repeating a cycle of 10 seconds at a maximum temperature of 260 ° C. using a belt-type reflow tester 10 times. Moreover, the temperature cycle test was performed by repeating 1000 cycles of the process of hold | maintaining for 30 minutes at the temperature of -60 degreeC after hold | maintaining at 125 degreeC for 30 minutes.

(Comparative Example 1)
The electrically insulating substrate of the circuit component built-in module of Comparative Example 1 is 85% by weight of Al ₂ O ₃ (same amount of AS-20 and AS-40 manufactured by Showa Denko KK) as the inorganic filler, and 5% of the liquid epoxy resin. A mixture containing 7% by weight, 11% by weight of a solid epoxy resin, 0.3% by weight of a curing agent, 0.7% by weight of a coupling agent (manufactured by Ajinomoto Co., Inc., titanate, 46B), and a composition. It was made using. That is, the mixture used in Comparative Example 1 is different from the mixture in which the electrically insulating substrate is formed in Example 1 in that no rubber component is contained.

  Moreover, as a manufacturing process, the heating process which protrudes the filled conductive resin composition as shown in FIG.2 (d) was not performed, and the remaining processes other than that were produced by the same process as Example 1. .

  As a result of the solder reflow test and the temperature cycle test, the circuit component built-in module of Example 1 has a resistance value of the inner via connection by the conductive resin composition (excluding the wiring portion, only the inner via connection). Resistance value) was a change rate within 10% before and after the start of the test. Further, as a result of observing the cross section of the inner via portion after the test, no crack was generated, and no abnormality was observed even when an ultrasonic flaw detector was used.

  On the other hand, in Comparative Example 1, the change in the resistance value of the inner via connection exceeds 10%, and among the samples in which the change in the resistance value exceeds 10% in the cross-sectional observation, cracks are generated. Some were observed. In Comparative Example 1, it is considered that cracks were generated due to the difference in thermal expansion between the conductive resin composition and the insulating material of the electrically insulating substrate. In Example 1, the wall surface of the inner via and the conductive resin were considered. It is considered that the occurrence of cracks could be suppressed by maintaining the adhesion strength with the composition.

(Comparative Example 2)
Further, as Comparative Example 2, a sample produced using the same material and production method as Example 1 except that the heating step for shrinking the diameter of the hole in the central portion of the inner via as compared with Example 1 is not performed. On the other hand, the solder reflow test and the temperature cycle test were performed.

  In the sample manufactured in Comparative Example 2, the contraction rate of the central portion with respect to the opening portion of the inner via was 0%.

(Example 2)
Further, as Example 2, compared to Example 1, in the step of shrinking the diameter of the central portion of the inner via, it was manufactured using the same conditions and manufacturing method as Example 1 except that it was heated at 80 ° C. for 3 minutes. The solder reflow test and the temperature cycle test were performed on the obtained samples.

  In the sample produced in Example 2, the contraction rate of the central portion with respect to the opening portion of the inner via was about 3 to 5%.

  As a result of the solder reflow test and the temperature cycle test, in Comparative Example 2, about 5% of samples in which the resistance change of the inner via connection exceeded 10% occurred.

  On the other hand, in Example 2 described above, about 2% of samples in which the change in resistance value of the inner via connection exceeded 10% occurred.

  As described above, it can be seen from (Example 1) and (Comparative Example 2) that a circuit component built-in module with high reliability and good quality can be obtained by performing the heat treatment for shrinking the inner via.

  Furthermore, from (Example 1) and (Comparative Example 1), by adding a rubber component to the mixture forming the electrically insulating substrate and performing a heat treatment to shrink the inner via, the reliability is higher and the quality is improved. It can be seen that a module with a built-in circuit component can be obtained.

  In (Example 2), the heat shrinkage rate is smaller by heat treatment than in (Example 1), but in comparison with (Comparative Example 1) and (Comparative Example 2), the reliability of the circuit component built-in module is high. It can be seen that the quality and quality are increasing.

(Example 3)
Example 3 is an example in which a circuit component built-in module was manufactured by the method described in the second embodiment.

In this example, a circuit component built-in module was manufactured using the same material as in Example 1.
An electrically insulating substrate material having cover films formed on both sides with a thickness of about 800 μm was prepared, and through holes (diameter 0.25 mm) for connecting inner via holes using a puncher machine were formed (FIG. 7B). )reference).

  Next, a 0603 size chip component 107 (for example, a resistor) was inserted into the desired inner via 103 (see FIG. 7C). In this example, a 0Ω resistor was inserted.

  Next, a heating step (80 ° C., 10 minutes) for shrinking the inner via 103 was performed (see FIG. 7D). At this time, care should be taken because if it is contracted to a large extent, it cannot be contracted in the second heating step.

  Next, the through-hole was filled with the conductive resin composition 111 ′ by a screen printing method (see FIG. 7E). At this time, after the screen printing is filled with the conductive resin composition from one side using a printing machine, it is reversed and filled with the conductive resin composition from one side again. Thereby, the conductive resin composition 111 ′ is disposed between the inserted chip component 107 and the substrate electrode 102.

  Next, the electrically insulating substrate material 202 filled with the conductive resin composition 111 ′ was heated at 120 ° C. for 5 minutes. By this step, the diameter of the hole shrinks at the central portion 103a of the inner via 103, and the filled conductive resin composition protrudes (see FIG. 7F). This heating step is performed at a higher temperature than the previous heating step, thereby releasing the remaining residual stress and shrinking the inner via.

Next, the cover film 201 is peeled from the electrically insulating substrate material 202 (see FIG. 7G), the first substrate 101 and the second substrate 108 on which the substrate electrode 102 is formed at a desired position, and the inner via 103. The electrically insulating substrate material 202 having the above structure was laminated, and pressurization heating was performed for 60 minutes at a press temperature of 180 ° C. and a pressure of 20 kg / cm ² by a hot press machine.

  By this heating, the epoxy resin in the electrically insulating substrate material 202 and the epoxy resin in the conductive resin composition 111 ′ are cured, and the semiconductor element in the electrically insulating substrate material 202 and the copper foil as the substrate electrode 102 are electrically connected. The insulating substrate material 202 was mechanically firmly connected. Further, by this heating, the conductive resin composition 111, the substrate electrode 102, and the electrode of the chip component 107 disposed in the inner via 103 and the substrate electrode 102 were electrically (inner via connection) and mechanically connected.

  Further, the electrode 107a of the chip component 107 inserted into the inner via 103 is melted by heat applied when the component is mounted on the outer surface of the built-in circuit component module, and the conductive resin composition 111 ' A strong connection structure is formed by metal bonding with the metal filler.

(Comparative Example 3)
Further, as Comparative Example 3, the same conditions as in Example 3 except for the heating step (FIG. 7D) that shrinks the inner via after inserting the electronic component 107 into the through hole as compared with Example 3. This was manufactured using a manufacturing method.

(Comparative Example 4)
Further, as Comparative Example 4, the heating step (FIG. 7F) for shrinking the inner via after filling the through hole with the conductive resin composition 111 ′ by screen printing as compared with Example 3 is excluded. Except for the above, it was produced using the same conditions and production method as in Example 3.

  The samples prepared in Example 3, Comparative Example 3, and Comparative Example 4 were subjected to a solder reflow test and a temperature cycle in the same manner as in Example 1.

  In Example 3, the resistance value of the inner via connection and the via with the built-in component has a rate of change within 10% before and after the start of the test. Even when using the ultrasonic flaw detector, no abnormality was observed.

  In Comparative Example 3, the part dropped out during the filling process of the conductive resin composition after the part was inserted. In addition, although the part does not fall off, the part is biased to the opposite side in the filling process from one side, and the conductive resin composition cannot be filled in the process of reversing and filling the conductive resin composition from one side again. A sample was generated that caused an electrical connection failure.

In Comparative Example 4, as a result of the solder reflow test and the temperature cycle test, about 5% of samples in which the resistance change of the inner via connection exceeded 10% occurred.
In addition, about 3% of the samples in which the resistance change of the inner via connection of the inner via into which the component was inserted exceeded 10% occurred.

  The circuit component built-in module and the method for manufacturing the circuit component built-in module according to the present invention have an effect of providing heat dissipation and reliability of electrical connection, and are useful as a circuit component built-in module and the like.

100, 250, 260, 300 Circuit component built-in module 101 First substrate 102 Substrate electrode 103 Inner via 104 Electrical insulating substrate 105 Semiconductor chip 106 Chip component 107 Chip component 108 Second substrate 109 Sealing resin 110, 261, 262 Built-in component Layer 111 Conductive resin composition 201 Cover film 205 Projection portion 400 Circuit component built-in module 401a, 401b, 401c Insulating substrate 402a, 402b, 402c Wiring pattern 403a, 403b Circuit component 404 Inner via

Claims (7)

A method for manufacturing a circuit component built-in module in which electrical interlayer connection is performed using a conductive composition,
An inner via forming step of forming one or a plurality of inner vias for providing a through hole in the thickness direction of the material of the insulating substrate and performing electrical interlayer connection;
A filling step of filling the inner via with a conductive composition;
A heating step of heating so that the diameter of the central portion of the inner via is shorter than the diameter of the opening;
A laminating step of arranging and laminating members on both surfaces of the material of the insulating substrate,
A method for manufacturing a circuit component built-in module, comprising: a pressure heating step of pressing and heating the material of the laminated insulating substrate and the member. An attaching step of attaching a cover film to the material of the insulating substrate;
After the heating step, further comprising a peeling step for peeling the cover film from the material of the insulating substrate,
The inner via forming step is a step of providing the through hole in the material of the insulating substrate together with the cover film,
The method for manufacturing a circuit component built-in module according to claim 1, wherein the filling step is a step of filling the inner via with the conductive composition by a screen printing method.   3. The method of manufacturing a circuit component built-in module according to claim 1, wherein the inner via forming step is a step of providing the through hole by punching. A circuit component built-in module manufactured by the method for manufacturing a circuit component built-in module according to claim 1,
The inner via has a circuit component built-in module in which a diameter of the central portion is 10% to 50% shorter than a diameter of the opening. The insulating substrate is formed of a material containing an inorganic filler and a resin component,
The inorganic filler is contained in the material by 70 to 95% by weight,
The resin component includes a thermosetting resin and a rubber component,
The circuit component built-in module according to claim 4, wherein the rubber component has a molecular weight of 50,000 or more and is contained in the resin in an amount of 20 wt% to 60 wt%.   The circuit component built-in module according to claim 4, wherein circuit components are disposed in all or part of the inner via. A component insertion step of inserting circuit components into all or part of the inner via;
A sandwiching step of heating so that the diameter of the central portion of the inner via is shorter than the diameter of the opening so as to sandwich the inserted circuit component;
The method of manufacturing a circuit component built-in module according to claim 1, wherein the filling step is a step of filling the conductive composition into the inner via into which the component is inserted.