JP5080847B2 - LAMINATED FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - Google Patents

Description

  The present invention relates to a thermosetting film for die bonding used in a semiconductor device and a method for manufacturing a semiconductor device using the same.

  In general, a process for assembling a semiconductor such as an IC includes a process for dicing a patterned semiconductor wafer into chips, a process for bonding a chip to a substrate or the like, and a process for sealing the chip. The dicing process is a process in which a semiconductor wafer is affixed and fixed to a dicing tape, and dicing into a desired chip shape. The die bonding process picks up a chip from the dicing tape, and fixes and bonds it to a substrate or a lead frame. The chip sealing step is a step of sealing the chip with a substrate or a lead frame with a sealing resin or the like.

  The film used in the above process is required to have adhesive strength with the chip so that chip jumping from the dicing tape does not occur during dicing, and can be easily peeled from the dicing tape when picking up the chip, In addition, after die bonding, sufficient bonding strength between the chip and the substrate is required.

  In order to achieve these objects, an acrylic pressure-sensitive adhesive having a radiation-curable carbon-carbon double bond-containing group such as ultraviolet rays and electron beams, an epoxy group-containing group, and a carboxyl group has been disclosed (Patent Document 1). Etc.).

  However, in order to avoid peeling of the wafer from the film at the time of picking up after dicing, the adhesive strength to the wafer is sufficient at the time of dicing, and it is possible to peel off from the dicing tape at the time of picking up. A thermosetting film for die bonding, which has a sufficient adhesive strength with a substrate or the like and in which voids are suppressed between the chip or the substrate or the like, has not been put into practical use yet.

Japanese Patent Laid-Open No. 2003-261838

  The present invention has sufficient adhesion to the chip so that the chip does not peel off at the time of die bonding, and can be peeled off from the dicing tape at the time of pick-up. After curing, the chip and the substrate or lead frame are sufficiently bonded. It is an object of the present invention to provide a thermosetting film for die bonding that has a force and further suppresses the generation of voids between a chip or a substrate or a lead frame.

  The present invention provides (A) a vinyl compound represented by the following general formula (1),

(Where
R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ may be the same or different and are a hydrogen atom, a halogen atom, an alkyl group, a halogenated alkyl group or a phenyl group,
— (O—X—O) — is represented by the structural formula (2), in which R ₈ , R ₉ , R ₁₀ , R ₁₄ , and R ₁₅ may be the same or different, and may be a halogen atom or a carbon number. An alkyl group or phenyl group having 6 or less, and R ₁₁ , R ₁₂ and R ₁₃ may be the same or different, and are a hydrogen atom, a halogen atom or an alkyl group or phenyl group having 6 or less carbon atoms,
-(YO)-is one structure represented by the structural formula (3) or two or more structures represented by the structural formula (3) arranged at random, where R ₁₆ , R ₁₇ may be the same or different and is a halogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group, and R ₁₈ and R ₁₉ may be the same or different, and may be a hydrogen atom, halogen atom, or 6 or less carbon atoms. An alkyl group or a phenyl group,
Z is an organic group having 1 or more carbon atoms, and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom in some cases,
a and b each represents an integer of 0 to 300, at least one of which is not 0;
c and d represent an integer of 0 or 1. )
(B) a thermoplastic elastomer and / or rubber;
And a thermosetting film for die bonding.

  Furthermore, the present invention relates to a laminated film in which a thermosetting film for die bonding is laminated on a dicing tape. Moreover, it is related with the manufacturing method of a semiconductor device using the thermosetting film or laminated | multilayer film for die bonding.

  According to the present invention, it is excellent in adhesiveness such as a chip at the time of dicing, and can be peeled off from a dicing tape at the time of picking up, and after being cured, it has excellent adhesiveness between a semiconductor chip and the substrate or a lead frame, There is provided a thermosetting film for die bonding in which voids between a chip or a substrate or a lead frame are suppressed. In addition, the resin obtained by curing the thermosetting film for die bonding has a low elastic modulus and has a low dielectric constant and a low dielectric loss tangent in a high frequency region, and is extremely useful in the manufacture of semiconductor devices. .

  The thermosetting film for die bonding of this invention contains the vinyl compound shown by said general formula (1) as a component (A). These compounds are as described in JP-A No. 2004-59644.

In the structural formula (2) for — (O—X—O) — of the vinyl compound represented by the general formula (1), R ₈ , R ₉ , R ₁₀ , R ₁₄ and R ₁₅ are preferably carbon atoms. It is an alkyl group having 3 or less, and R ₁₁ , R ₁₂ and R ₁₃ are preferably a hydrogen atom or an alkyl group having 3 or less carbon atoms. Specifically, structural formula (4) is mentioned.

In Structural Formula (3) for — (Y—O) —, R ₁₆ and R ₁₇ are preferably an alkyl group having 3 or less carbon atoms, and R ₁₈ and R ₁₉ are preferably a hydrogen atom or a carbon atom. It is an alkyl group having a number of 3 or less. Specifically, structural formula (5) or (6) is mentioned.

  Z includes an alkylene group having 3 or less carbon atoms, specifically a methylene group.

  a and b each represent an integer of 0 to 300, preferably at least one of which is not 0, and preferably represents an integer of 0 to 30.

  A vinyl compound of the general formula (1) having a number average molecular weight of 1000 to 3000 is preferred. The number average molecular weight is a value using a standard polystyrene calibration curve by gel permeation chromatography (GPC).

  The vinyl compounds of the general formula (1) may be used alone or in combination of two or more.

  The thermosetting film for die bonding of the present invention contains a thermoplastic elastomer and / or rubber as the component (B). Examples of the thermoplastic elastomer include styrene-based thermoplastic elastomers such as styrene-butadiene-styrene block copolymers, styrene-isoprene-styrene block copolymers, olefin-based thermoplastic elastomers, polyester-based thermoplastic elastomers, and the like.

  Examples of the rubber include styrene-butadiene rubber, butyl rubber, butadiene rubber, acrylic rubber, and the like, and styrene-butadiene rubber is preferable.

  A thermoplastic elastomer is preferable from the viewpoint of the elastic modulus of the cured product. In particular, a styrene-based thermoplastic elastomer is preferable from the viewpoint of embedding in the unevenness of the substrate and a dielectric constant. For example, polystyrene block-butadiene block-styrene block copolymer (SBS) and styrene block-isoprene block-styrene block copolymer (SIS) are preferable.

  The styrene thermoplastic elastomer is preferably a block copolymer of a styrene polymer block and an olefin polymer block from the viewpoint of compatibility with the component (A).

  For example, polystyrene block-poly (ethylene / propylene) block copolymer (SEP), polystyrene block-poly (ethylene / propylene) block-polystyrene block copolymer (SEPS), polystyrene block-poly (ethylene / butylene) block- Polystyrene block copolymer (SEBS) and polystyrene block-poly (ethylene-ethylene / propylene) block-polystyrene block copolymer (SEEPS) are preferred. The styrene-based thermoplastic elastomer preferably has a weight average molecular weight of 30,000 to 200,000. The weight average molecular weight is a value obtained by gel permeation chromatography (GPC) using a standard polystyrene calibration curve.

  In addition, when a block copolymer of a styrene polymer block and an olefin polymer block is used, when laminated with a UV curable dicing tape, the adhesive force between the dicing tape and the thermosetting film for die bonding is reduced by UV irradiation. The chip pick-up operation can be facilitated.

  The thermoplastic elastomer and / or rubber may be used alone or in combination of two or more.

  The weight ratio of the component (A) and the component (B) is preferably 10:90 to 90:10, and in order for the cured product to have a low dielectric constant / low dielectric loss tangent and a low elastic modulus in a good balance, Preferably it is 40: 60-60: 40, Most preferably, it is 45: 55-55: 45.

  The thickness of the thermosetting film for die bonding is preferably 50 μm or less, for example, 2 to 50 μm. From the viewpoint of dealing with the recent thinning of electronic components, the thickness is preferably 30 μm or less, more preferably 20 μm or less. Further, from the viewpoint of embedding in unevenness such as a substrate, 5 μm or more is preferable.

Viscosity of thermosetting film for die bonding is good for embedding in irregularities such as substrates, suppresses breakage of chips such as silicon, and suppresses the occurrence of pinholes in thermosetting film for die bonding From the viewpoint of, the viscosity at a temperature of 150 to 200 ° C. is preferably 10 to 10 ⁵ Pa · s. When the viscosity is 10 Pa · s or more, when the chip is mounted on a substrate or the like, the amount of protrusion of the thermosetting film for die bonding can be suppressed, or the thermosetting film for die bonding can suppress the side surface of the chip. The tendency to stain the wire bonding pad and the like is small. Further, when the viscosity is 10 ⁵ Pa · s or less, the embedding property to the unevenness of the substrate or the like is good, and the porosity between the chip or the substrate and the thermosetting film for die bonding is easily suppressed. More preferably, it is 10 ² to 10 ⁴ Pa · s.

When the thermosetting film for die bonding has an adhesive strength to the dicing tape of 2 × 10 ⁻⁶ to 2 × 10 ⁻⁴ Pa, picking up of the chip after dicing is preferable.

  The thermosetting film for die bonding is preferably provided with a dicing tape, and from the viewpoint of handling properties, it is more preferable that the thermosetting film for die bonding is laminated on the dicing tape.

Thermosetting film for die bonding is through the dicing tape, the irradiance 100~250mW / cm ^2, integrated light quantity 50 to 3000 mJ / cm ² adhesive strength between the dicing tape after irradiation with ultraviolet rays is 2 × 10 ^{-6 to} 2 × 10 ⁻⁴ Pa is more preferable because the adhesive strength of the dicing tape is reduced due to curing of the dicing tape by ultraviolet irradiation, and the chip pick-up work after dicing becomes good.

  Note that the thermosetting film for die bonding has additives such as an inorganic filler, a tackifier, an antifoaming agent, a flow control agent, a film forming aid, and a dispersion aid within a range not impairing the effects of the present invention. Can be included.

  The thermosetting film for die bonding can be cured only by heating without using a curing catalyst.

Next, the manufacturing method of the said thermosetting film 1 for die bonding is demonstrated.
The thermosetting film 1 for die bonding is prepared by dissolving or dispersing a raw material containing the components (A) and (B) in an organic solvent to obtain a varnish, and applying and drying the obtained varnish on a desired support. Can be formed.

  Examples of the organic solvent include aromatic solvents such as toluene and xylene, ketone solvents such as methyl ethyl ketone and methyl isobutyl ketone. The organic solvents may be used alone or in combination of two or more. Moreover, the usage-amount of an organic solvent is although it does not specifically limit, Preferably, it is preferable to use so that solid content may be 20-50 weight%. From the viewpoint of workability, the varnish preferably has a viscosity range of 100 to 2000 mPa · s. The viscosity is a value measured using an E-type viscometer at a rotation speed of 5 rpm and 25 ° C.

  The support is not particularly limited, and examples thereof include metal foils such as copper and aluminum, organic films such as polyester resins, polyethylene resins, and polyethylene terephthalate resins. The support may be release-treated with a silicone compound or the like.

  Furthermore, as shown in FIG. 1, the dicing tape 2 can be used as a support for the thermosetting film 1 for die bonding to form a laminated film.

  The method for applying the varnish is not particularly limited, but the microgravure method, the slot die method, and the doctor blade method are preferable from the viewpoint of thinning and film thickness control. By the microgravure method, for example, a thermosetting film for die bonding having a thickness of 50 μm or less can be obtained.

  The drying conditions can be appropriately set according to the type and amount of the organic solvent used in the varnish, the thickness of the coating, and the like, and can be set at, for example, 50 to 120 ° C. for about 1 to 30 minutes. .

  The thermosetting film 1 for die bonding obtained in this way has good storage stability.

  Furthermore, the thermosetting film 1 for die bonding has good embeddability and good embeddability in unevenness such as a substrate. It is also excellent in workability such as drilling with a laser.

  The thermosetting film 1 for die bonding is in an uncured state and can be further cured. The curing conditions can be set as appropriate, for example, 150 to 250 ° C. and about 10 to 120 minutes.

  The cured product has a low dielectric constant and a low dielectric loss tangent in a high frequency region. For example, the cured product may have a dielectric constant of 4 or less and a dielectric loss tangent of 0.025 or less under conditions of a temperature of 25 ° C. and a frequency of 5 GHz. it can. Furthermore, for example, a dielectric constant of 2.6 or less and a dielectric loss tangent of 0.005 or less can be achieved through control of the blending ratio of components (A) and (B).

  Moreover, this hardened | cured material is low elastic modulus, can also contribute to stress relaxation, and is easy to handle on a process. For example, the elastic modulus by dynamic viscoelasticity measurement can be 3.5 GPa or less at a temperature of 25 ° C. Furthermore, for example, a level of 1.5 GPa or less can be achieved through control of the blending ratio of components (A) and (B).

  Next, although the usage method of the said thermosetting film 1 for die bonding is demonstrated based on FIG. 2, embodiment of this invention is not limited to the following.

  First, the thermosetting film 1 for die bonding is attached to a semiconductor wafer 3 such as silicon having a pattern formed (FIG. 2A). The pasting is performed by bringing the thermosetting film 1 for die bonding into close contact with the semiconductor wafer 3, but it may be performed by thermocompression bonding with a roll or a press.

  Next, a dicing tape 2 is attached to the surface opposite to the surface on which the semiconductor wafer 3 is attached to the thermosetting film 1 for die bonding (FIG. 2B). This pasting can be performed in the same manner as the pasting in FIG.

  After the pasting, the semiconductor wafer 3 and the thermosetting film 1 for die bonding are diced into a desired shape (FIG. 2C). At this time, a part or all of the dicing tape 2 may be diced. This dicing process may be the same as the process used in the manufacturing process of a normal semiconductor device.

  When a UV curable type is used for the dicing tape 2, ultraviolet rays can be irradiated through the dicing tape 2 (FIG. 2D). By this step, it is possible to improve the workability of the pickup of the semiconductor chip 4 and the thermosetting film 1 for die bonding in the next die bonding step. In addition, when the dicing tape 2 is a heat peeling type, a pressure-sensitive (weak adhesion) type, or the like, this step can be omitted.

  Next, the process proceeds to a die bonding process. In this step, first, the diced semiconductor chip 4 and the thermosetting film piece for die bonding 10 are picked up by the mounter head 5 and picked up from the dicing tape 2 (FIG. 2E).

  The picked-up semiconductor chip 4 and die bonding thermosetting film piece 10 are mounted on the substrate 6 (FIG. 2F). At this time, die bonding is preferably performed at a temperature of 120 to 150 ° C., a load of 200 to 1000 g, and 2 to 20 seconds. In addition, it can mount on a lead frame etc. instead of the board | substrate 6, and it is also possible to mount with the board | substrate 6 and a lead frame.

  Next, the thermosetting film piece 10 for die bonding is cured by heating (FIG. 2G).

  After the above steps, if necessary, after performing wiring such as wire bonding, a chip can be sealed using a commercially available sealing resin or the like to manufacture a semiconductor device. Note that a part of the above steps can be omitted if not necessary.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these. Indications are by weight unless otherwise noted.

  In the formulation shown in Table 1, varnish was prepared using toluene as a solvent (solid content: about 30% by weight). The obtained varnish was coated on a polyethylene terephthalate film having a thickness of 38 μm and a width of 320 mm with a micro gravure coater so that the thickness became 25 ± 1 μm and a width of 300 mm, and after 70 ° C. for 10 minutes, 120 ° C. for 5 minutes. The film was dried under the above conditions to obtain a thermosetting film for die bonding (hereinafter referred to as a film).

(Compatibility observation)
The appearance of the varnish during the preparation and the appearance after film formation were visually observed to determine compatibility. The results are shown in Table 1. When no white turbidity was observed in any of the varnish and the film, the compatibility was evaluated as ◯, and when white turbidity was observed in at least one of the varnish or the film, it was marked as “x”. Examples 1 to 3 showed good compatibility.

(Observation of film cracks)
The dried film was wound around a paper tube having an outer diameter of 86 mm and a width of 350 mm. The film after drying and winding was visually observed for the occurrence of cracks. The results are shown in Table 1. A sample in which no cracks occurred after drying and after winding was marked as ◯. Examples 1 to 3 showed that no cracks occurred in the film.

(Observation of hardening generation void)
Next, the film having a width of 10 mm and a length of 10 mm was sandwiched between glass plates having a width of 5 mm, a length of 5 mm and a thickness of 1 mm, and thermocompression bonded at a temperature of 120 ° C. and a load of 500 g for 10 seconds to prepare a test piece. The test piece is heated at 120 ° C., 150 ° C., 180 ° C., 200 ° C., and 250 ° C. for 120 minutes to evaluate whether voids are generated during film curing or at high temperature holding after curing. went. After the heating, the presence of voids was confirmed using a microscope at a magnification of 40 times. The results are shown in Table 1. The case where the generation of voids was not confirmed was marked with ◯, and the case where the generation of voids was confirmed was marked with x. Examples 1 to 3 show that voids did not occur inside the film and at the interface between the film and the glass plate.

(Evaluation of embedding on a substrate)
A glass chip with a width of 5 mm, a length of 5 mm, and a thickness of 1 mm, to which the above-mentioned film having a width of 5 mm and a length of 5 mm is attached, is placed on an FR-4 substrate having 5-30 μm irregularities on which a resist is formed on the pattern. The test piece was manufactured by mounting at a temperature of 180 ° C. and a load of 500 g for 10 seconds. The presence or absence of voids was confirmed on the glass chip of the test piece with a microscope at a magnification of 40 times. The results are shown in Table 1. A case where the porosity between the glass chip and the FR-4 substrate was less than 2% was evaluated as ◯, and a case where the porosity was 2% or more was evaluated as x. Examples 1 to 3 show that the embedding property to the substrate was good, and no void was observed at the interface between the film and the substrate.

(Pickup property test when using UV curable dicing tape)
The film having a width of 10 mm and a length of 10 mm and a silicon chip having a width of 10 mm, a length of 10 mm and a thickness of 0.75 mm were attached at room temperature. The surface of the film opposite to the surface on which the silicon chip was attached was bonded to a Lintec UV curable dicing tape to prepare a test piece. The dicing tape surface of the test piece was irradiated with UV light. The UV light was irradiated with a metal halide lamp so that the irradiance was 200 mW / cm ² and the integrated light amount was 1800 mJ / cm ² . Thereafter, a jig having a diameter of about 5 mm was attached to the approximate center of the silicon chip. The dicing tape was fixed, pulled with a jig attached to a desktop autograph (manufactured by Aiko Engineering, model number 1605HTP), and the tensile strength was measured at room temperature (25 ° C.). The results are shown in Table 1. Considering the material strength of the silicon chip and the film so that the damage in the silicon chip and the film does not occur at the time of pick-up, when the tensile strength is less than 1 N / (10 mm × 10 mm), 1N / (10 mm × 10 mm) or more was taken as x. Examples 1-3 were (circle). Examples 1 to 3 showed excellent adhesion to the tape at the stage of specimen preparation (before curing).

  Next, the characteristic test of the film after hardening was done. In particular, the curing conditions when there is no description are a temperature of 180 ° C. and 120 minutes.

(Adhesion test with chip and substrate)
A silicon chip with a width of 2 mm, a length of 2 mm, and a thickness of 0.75 mm with the film of 2 mm in width and 2 mm in length attached is placed on a glass epoxy substrate with the film side down, at a temperature of 180 ° C. and a load of 500 g. Die bonded. After die bonding, it was cured at a temperature of 180 ° C. for 120 minutes to produce a test piece. Considering the working temperature at the time of wire bonding, the test piece is sheared at a temperature of 180 ° C. using a bond tester (manufactured by Arctech, model number: universal bond tester series 4000) at a shear rate of 0.1 mm / sec. The strength was measured. The results are shown in Table 1. A case where the shear strength was 10 N / (2 mm × 2 mm) or more was evaluated as “◯”, and a case where the shear strength was less than 10 N / (2 mm × 2 mm) was evaluated as “X”. Examples 1-3 were (circle).

(Measurement of glass transition temperature and elastic modulus)
The glass transition temperature (Tg) and the storage elastic modulus at 25 ° C. were measured at a frequency of 10 Hz (tensile mode) by dynamic viscoelasticity measurement (DMA). The results are shown in Table 2.

(Elastic modulus measurement at high temperature)
The film was cut into a width of 10 mm and a length of 40 mm and then cured to obtain a test piece. Using this sample made by Seiko Instruments Inc. (model number EXSTAR6000 DMS), DMA method (dynamic viscoelasticity measurement), grip width 15 mm, heating rate 3 ° C./min, frequency 10 Hz, tensile mode, storage elasticity of 220 ° C. The rate was measured. The results are shown in Table 1. In order to prevent deformation at the time of wire bonding, the case where the elastic modulus was 10 MPa or more was evaluated as ◯, and the case where it was less than 10 MPa was evaluated as x. Examples 1-3 were (circle).

(Measurement of dielectric constant and dielectric loss tangent)
Next, the cured film is cut into a size of 40 mm × 100 mm and formed into a cylindrical shape having a diameter of about 2 mm, and the dielectric constant (ε) and dielectric loss tangent (tan δ) are set at a temperature of 25 ° C. and a frequency using a cavity resonator. Measurement was performed at 5 GHz. The results are shown in Table 2.

  As a comparative example, a varnish of a resin composition was prepared with the composition shown in Table 1 using toluene as a solvent (solid content: about 30% by weight). The others were tested in the same manner as in Examples 1-5. In Comparative Example 1, the porosity was x, and in Comparative Examples 2 and 3, the shear strength and elastic modulus were x.

It is a schematic diagram of the laminated | multilayer film of the thermosetting film for die bonding of this invention, and a dicing tape. It is an example of the usage method of the die-bonding film of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Thermosetting film for die bonding 2 Dicing tape 3 Semiconductor wafer 4 Semiconductor chip 5 Mounter head 6 Substrate 7 Wiring 8 Resist 10 Thermosetting film piece for die bonding

Claims (5)

(A) a vinyl compound represented by the following general formula (1);

(Where
R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ may be the same or different and are a hydrogen atom, a halogen atom, an alkyl group, a halogenated alkyl group or a phenyl group,
— (O—X—O) — is represented by the structural formula (2), in which R ₈ , R ₉ , R ₁₀ , R ₁₄ , and R ₁₅ may be the same or different and are each a halogen atom or a carbon number 6 or less alkyl group or phenyl group, R ₁₁ , R ₁₂ and R ₁₃ may be the same or different, and are a hydrogen atom, a halogen atom or an alkyl group or phenyl group having 6 or less carbon atoms,
-(YO)-is one type of structure represented by the structural formula (3) or two or more types of structures represented by the structural formula (3) arranged at random, where R ₁₆ , R ₁₇ may be the same or different, and is a halogen atom, an alkyl group having 6 or less carbon atoms, or a phenyl group, and R ₁₈ and R ₁₉ may be the same or different, and may be a hydrogen atom, halogen atom, or 6 or less carbon atoms. An alkyl group or a phenyl group,
Z is an organic group having 1 or more carbon atoms, and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom in some cases,
a and b each represents an integer of 0 to 300, at least one of which is not 0;
c and d represent an integer of 0 or 1. )
(B) a thermoplastic elastomer and / or rubber;
Only including the weight ratio of component (A) and component (B), 40:60 to 60:40, the thermosetting film for die bonding is formed by laminating a dicing tape, laminated film. The adhesive strength of the die bonding thermoset film and the dicing tape, a ^{2 × 10 -6 ~2 × 10 -4} Pa, the laminated film of claim 1, wherein. Through the dicing tape, the irradiance 100~250mW / cm ^2, the adhesive strength of the die bonding thermoset film and the dicing tape after the integrated light quantity was irradiated with ultraviolet rays at 50~3000mJ / cm ^{2, 2} × 10 The laminated film according to claim 2 , which is ^{−6 to} 2 × 10 ⁻⁴ Pa. A wafer is bonded to one surface of the thermosetting film for die bonding according to any one of claims 1 to 3 , a dicing tape is bonded to a surface opposite to the surface to which the wafer is bonded, and the wafer and the die bonding are bonded. At least dicing the thermosetting film for use, and in some cases, irradiating with ultraviolet rays through a dicing tape, picking up the diced wafer and the thermosetting film for die bonding, and mounting the chip with the thermosetting film for die bonding to the substrate A method for manufacturing a semiconductor device, comprising: thermocompression bonding a thermosetting film for die bonding after thermocompression bonding. A thermosetting film for die bonding of a laminated film according to any one of claims 1 to 3 is bonded to a wafer, and the wafer and the thermosetting film for die bonding are at least diced, and optionally via a dicing tape. After irradiating ultraviolet rays, picking up the diced wafer and the thermosetting film for die bonding, thermocompression bonding the chip with the thermosetting film for die bonding to the substrate, and then curing the thermosetting film for die bonding. A method for manufacturing a semiconductor device.

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