JP5057338B2 - 反平行結合膜構造体、トンネル磁気抵抗素子および磁気デバイス - Google Patents
反平行結合膜構造体、トンネル磁気抵抗素子および磁気デバイス Download PDFInfo
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- JP5057338B2 JP5057338B2 JP2008165195A JP2008165195A JP5057338B2 JP 5057338 B2 JP5057338 B2 JP 5057338B2 JP 2008165195 A JP2008165195 A JP 2008165195A JP 2008165195 A JP2008165195 A JP 2008165195A JP 5057338 B2 JP5057338 B2 JP 5057338B2
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- film structure
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- coupling film
- ferromagnet
- antiparallel coupling
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- Measuring Magnetic Variables (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Description
Claims (6)
- 第1の強磁性体と、第2の強磁性体と、前記第1の強磁性体と前記第2の強磁性体との間に挟まれて存在する極薄非磁性金属体とを具え、前記第1の強磁性体の磁化と前記第2の強磁性体の磁化とが反平行になる交換結合力を有する反平行結合膜構造体において、
前記第1の強磁性体および前記第2の強磁性体の一方はCoFeB合金またはCoFe合金からなり、他方は面心立方構造を有するCoFe合金またはNiFe合金からなり、
前記面心立方構造を有するCoFe合金またはNiFe合金は、Ta/Ruの積層膜から成る下地層を介して形成されており、
熱処理プロセスを経ていることを
特徴とする反平行結合膜構造体。 - 前記熱処理プロセスは300℃乃至400℃の熱処理であることを特徴とする請求項1記載の反平行結合膜構造体。
- 前記極薄非磁性金属体は、Ruから成ることを特徴とする、請求項1または2記載の反平行結合膜構造体。
- 前記極薄非磁性金属体の膜厚が0.8nm程度であることを、特徴とする請求項3記載の反平行結合膜構造体。
- 強磁性金属磁化固定層/絶縁体/強磁性金属磁化自由層からなり磁化固定層の磁化と磁化自由層の磁化との相対角度により抵抗が変化するトンネル磁気抵抗素子において、請求項1、2、3または4記載の反平行結合膜構造体を前記磁化自由層あるいは前記磁化固定層の少なくとも一方に用いたことを、特徴とするトンネル磁気抵抗素子。
- 請求項5に記載のトンネル磁気抵抗素子を用いたことを、特徴とする磁気デバイス。
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JP2008165195A JP5057338B2 (ja) | 2008-06-25 | 2008-06-25 | 反平行結合膜構造体、トンネル磁気抵抗素子および磁気デバイス |
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JP2010010233A JP2010010233A (ja) | 2010-01-14 |
JP5057338B2 true JP5057338B2 (ja) | 2012-10-24 |
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JP6019393B2 (ja) * | 2012-07-27 | 2016-11-02 | パナソニックIpマネジメント株式会社 | テープフィーダ |
CN102867645B (zh) * | 2012-09-27 | 2015-04-29 | 北京科技大学 | 一种提高各向异性磁电阻坡莫合金薄膜热稳定性的方法 |
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JP2004259914A (ja) * | 2003-02-26 | 2004-09-16 | Alps Electric Co Ltd | 磁気検出素子 |
JP2005203701A (ja) * | 2004-01-19 | 2005-07-28 | Sony Corp | 磁気抵抗効果素子及び磁気メモリ装置 |
JP4690675B2 (ja) * | 2004-07-30 | 2011-06-01 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、および磁気記録再生装置 |
KR20100131967A (ko) * | 2008-03-06 | 2010-12-16 | 후지 덴키 홀딩스 가부시키가이샤 | 강자성 터널 접합 소자 및 강자성 터널 접합 소자의 구동 방법 |
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