JP5056004B2 - Three-dimensional inter-substrate connection structure and three-dimensional circuit device using the same - Google Patents

Description

  The present invention relates to a three-dimensional inter-substrate connection structure that mounts electronic components and connects a plurality of circuit boards, a manufacturing method thereof, and a three-dimensional circuit device using the same.

  Conventionally, as a substrate bonding member (hereinafter referred to as a “three-dimensional inter-substrate connection structure”) for connecting circuit boards on which electronic components such as IC chips and chip components are mounted, there are many plugs and sockets. A pole connection type connector or a pin connector in which a plurality of connection pins are fixed to a resin substrate is used.

  In recent years, the number of connection terminals between circuit boards has increased and the pitch of pin connector connection terminals has been narrowed with the progress of miniaturization and high functionality of mobile devices and the like.

  Therefore, for example, a large number of pin terminals having elastically displaceable displacement parts including contacts are arranged in a staggered manner in the longitudinal direction of the housing from the bottom of the housing of the pressure contact connector to the conductive part of the electric circuit board. A connector is disclosed (see, for example, Patent Document 1). Accordingly, the pitch between the pin terminals is narrowed to avoid an increase in size of the pressure contact connector, and stable contact with the conductive portion of the electric circuit board can be achieved.

  Also, the terminal shape is trapezoidal, and the long side and the short side parallel to the trapezoidal shape are arranged alternately on the connection side with the lead wire of the terminal, and the wide part of the terminal is connected to the external circuit A circuit board arranged in a staggered pattern as a contact region is disclosed (for example, see Patent Document 2). Thereby, the terminal formation region can be narrowed without lowering the connection reliability.

On the other hand, with respect to portable information devices and the like, with the increase in the speed and frequency of devices, demands for EMC (Electromagnetic Compatibility) such as malfunction due to external electromagnetic waves and interference with other devices due to radiated electromagnetic waves have become severe. . Therefore, there is a high demand for circuit board mounting technology that can reliably perform electromagnetic shielding. Therefore, even in a three-dimensional board-to-board connection structure that connects multiple circuit boards on which high-frequency components such as control IC chips are mounted, electromagnetic waves from outside and electromagnetic waves radiated from the inside by high-frequency parts are reliably shielded. It is required to do.
JP-A-11-265747 Japanese Patent Laid-Open No. 2002-334736

  According to the connector of Patent Document 1, the pin terminals that can be elastically displaced are arranged in a staggered pattern in the longitudinal direction of the housing to improve impact resistance and realize a narrow pitch between the pin terminals. However, there is a problem that it is difficult to reduce the thickness of the connector and the manufacturing cost increases.

  On the other hand, according to Patent Document 2, there is described a configuration in which contact regions of circuit board terminals are arranged in a staggered pattern in order to narrow a terminal formation region, but an external circuit or a three-dimensional inter-substrate connection structure and No connection is disclosed.

  Further, both Patent Document 1 and Patent Document 2 disclose a means for obtaining a good connection state with a circuit board having a mechanical deformation such as warpage caused by joining or a three-dimensional inter-substrate connection structure. Absent.

  The present invention has been made to solve the above-described problem, and is a three-dimensional board-to-board connection structure having a thin and reliable connection between a plurality of circuit boards having mechanical deformation such as warpage and having an electromagnetic shielding function. And a manufacturing method thereof and a three-dimensional circuit device using the same.

  In order to achieve the above-described object, a three-dimensional inter-substrate connection structure according to the present invention includes a frame-shaped housing having an inner periphery and an outer periphery, and a plurality of connection terminal electrodes that connect the upper and lower surfaces of the housing. And bumps provided on the plurality of connection terminal electrodes on at least one surface of the housing.

  Furthermore, the bumps have a configuration in which the height is different at least at the positions of the plurality of connection terminal electrodes.

  According to such a configuration, when the circuit boards are connected by the three-dimensional inter-substrate connection structure, the gap caused by the warp or the like can be absorbed by the bumps, and both can be bonded satisfactorily.

  Furthermore, the structure by which the contact area | region of several connection terminal electrodes is arrange | positioned at zigzag form may be sufficient.

  According to such a configuration, a plurality of connection terminal electrodes can be effectively arranged, and a three-dimensional inter-substrate connection structure for high-density mounting with an increased number of terminals can be realized.

  Further, a shield electrode may be formed on the side surface of the outer peripheral portion of the housing, and a ground electrode connected to the shield electrode may be formed on the upper and lower surfaces of the housing.

  Furthermore, the structure by which the some connection terminal electrode is provided in the upper and lower surfaces of the housing via the side surface of the inner peripheral part may be sufficient.

  According to such a configuration, it is possible to prevent noise and electromagnetic waves radiating from a large number of connection terminal electrodes where electrical signals of the circuit board are concentrated, and to reliably prevent noise and electromagnetic waves from being radiated from the outside.

  Furthermore, the structure by which the some connection terminal electrode is provided in the upper and lower surfaces of the housing via the inner peripheral part and the both sides | surfaces of an outer peripheral part may be sufficient.

  According to such a configuration, the distance between the plurality of connection terminal electrodes formed on the side surfaces of the inner peripheral portion and the outer peripheral portion of the housing can be increased, and the lead-out region of the connection terminal electrode is adjacent to the connection terminal. Since it does not pass between the contact areas of the electrodes, it is possible to reduce interference of electric signals and noise between adjacent connection terminal electrodes. Further, it can be developed to a terminal structure that can greatly increase the number of connection terminal electrodes.

  Furthermore, the structure by which the bump is formed with the stud bump may be sufficient. Further, the bump may be constituted by a substrate bump including a protrusion formed on at least one surface of the housing.

  According to such a configuration, the stud bump formed on the three-dimensional inter-substrate connection structure or the tip of the substrate bump is heated and pressed to be deformed and contacted on the connection terminal electrode of the circuit board and fixed by the heat-shrinkable resin. By doing so, a good bonding state can be realized.

  Furthermore, the structure by which the bump is formed with the solder bump may be sufficient.

  According to such a configuration, the solder bumps can be directly melted by heating and bonded to the connection terminal electrodes of the circuit board.

  Further, the manufacturing method of the three-dimensional inter-substrate connection structure of the present invention includes a step of molding a frame-shaped housing having an inner peripheral portion and an outer peripheral portion, a step of forming connection terminal electrodes on the housing, Forming bumps on the connection terminal electrodes on at least one of the surfaces.

  According to such a method, it is possible to easily produce a thin three-dimensional inter-substrate connection structure that can absorb mechanical deformation such as warpage and can satisfactorily join a plurality of circuit boards.

  The method for manufacturing a three-dimensional inter-substrate connection structure of the present invention includes a step of molding a frame-shaped housing having an inner peripheral portion and an outer peripheral portion, a step of forming a resist pattern on the housing, and a resist pattern A step of forming a plating layer thereon, a step of forming solder bumps by inserting solder into the opening of the resist pattern covered with the plating layer on at least one surface of the housing, and removing the resist pattern and connecting terminal electrodes Forming.

  According to such a method, the solder which is inserted into the opening of the resist while changing the amount of solder and forms a solder bump absorbs mechanical deformation such as warpage and is directly bonded to the connection terminal electrode of the circuit board. A thin three-dimensional inter-substrate connection structure having bumps can be easily manufactured.

  In the method for manufacturing a three-dimensional inter-substrate connection structure according to the present invention, a frame-shaped housing having an inner peripheral portion and an outer peripheral portion provided with protrusions in advance in a region located on at least one surface of the connection terminal electrode is formed. A step of forming, a step of forming a plating layer on the housing, a step of forming a resist pattern on the plating layer including protrusions, a step of etching a plating layer other than that covered with the resist pattern, and a resist pattern Peeling off and forming a substrate bump on the connection terminal electrode.

  According to such a method, the substrate bump can be easily formed by integrally molding the housing in which the protrusion is formed on the connection terminal electrode.

  The three-dimensional circuit device of the present invention is configured to connect at least the first circuit board and the second circuit board via the three-dimensional inter-substrate connection structure.

  According to such a configuration, it is possible to absorb a mechanical deformation such as a warp between a plurality of circuit boards and to make a good connection, and a connection between three-dimensional boards mounted on a plurality of connection terminal electrodes or a circuit board. A three-dimensional circuit device capable of electromagnetically shielding circuit components located in the inner periphery of the structure is obtained.

  ADVANTAGE OF THE INVENTION According to this invention, while being excellent in the reliability at the time of the connection between circuit boards, the thin three-dimensional board | substrate connection structure which has a shielding effect, its manufacturing method, and a three-dimensional circuit apparatus using the same are realizable.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1A is a plan view showing the configuration of the three-dimensional inter-substrate connection structure according to the first embodiment of the present invention, and FIG. 1B, FIG. 1C, and FIG. It is the sectional view on the AA line in 1 (A), the BB sectional view, and the CC sectional view.

  As shown in FIG. 1, the three-dimensional inter-substrate connection structure 2 includes a housing 8 made of a frame-shaped frame-like glass epoxy resin having a rectangular outer peripheral portion 4 and an inner peripheral portion 6, for example. In addition, a plurality of connection terminal electrodes 18 and 20 are arranged in a staggered pattern on the upper surface 14 and the lower surface 16 of the housing 8. The connection terminal electrode 18 includes an upper surface connection terminal electrode 18 a formed on the upper surface 14, a lower surface connection terminal electrode 18 b formed on the lower surface 16, and a side connection electrode formed on the side surface of the inner peripheral portion 6. It is formed integrally with 18c. Similarly, the connection terminal electrode 20 is configured by integrally forming an upper surface connection terminal electrode 20a, a lower surface connection terminal electrode 20b, and a side connection electrode 20c. Furthermore, the upper surface connection terminal electrode and the lower surface connection terminal electrode are connected to the rectangular region (hereinafter referred to as “contact region”) in contact with the connection terminal of the circuit board to be connected and the side surface connection electrode drawn from the contact region. It is composed of a band-like region (hereinafter referred to as “drawer region”). Here, the difference between the upper surface connection terminal electrode 18a and the upper surface connection terminal electrode 20a is that the contact region is arranged in a staggered pattern and is located on the outer peripheral portion 4 side of the upper surface connection terminal electrode 18a, so that the length of the extraction region is It is longer than the connection terminal electrode 20a. The difference from the lower surface connection terminal electrodes 18b and 20b is the same.

  A shield electrode 10 is formed over the entire side surface of the outer peripheral portion 4 of the housing 8. On the upper surface 14 and the lower surface 16 of the housing 8, for example, ground electrodes 12 a and 12 b connected to the shield electrode 10 are integrally formed at the four corner positions of the housing 8.

  A plurality of bumps 22 such as stud bumps, which will be described below, correspond to at least contact areas of the upper surface connection terminal electrodes 18a and 20a of the housing 8, that is, connection electrodes (not shown) of the circuit board. Formed in position. At this time, as will be described in detail with reference to FIG. 2 below, the size (size, height, etc.) of the bumps 22 corresponds to the deformation of the three-dimensional inter-substrate connection structure 2 such as warpage. Formed with.

  Thereby, mechanical deformation such as warpage of the circuit board to be connected is effectively absorbed through the three-dimensional inter-substrate connection structure, and a uniform and stable connection can be achieved.

  Hereinafter, a mechanism for absorbing mechanical deformation such as warping of a circuit board using the three-dimensional inter-substrate connection structure according to the first embodiment of the present invention will be described.

  FIG. 2A is a cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure joined to the first circuit board in the first embodiment of the present invention to the second circuit board. FIG. 2B is a cross-sectional view showing a state when the three-dimensional inter-substrate connection structure bonded to the first circuit board is bonded to the second circuit board.

  First, as shown in FIG. 2A, the connection electrode (not shown) of the first circuit board 24 and the lower surface connection terminal electrode 18b of the three-dimensional inter-substrate connection structure 2 are joined by solder or the like (lower surface connection). In the case of the terminal electrode 20b, the thermal expansion coefficients of the first circuit board 24 and the three-dimensional inter-substrate connection structure 2 are different. For example, when the thermal expansion coefficient of the first circuit board 24 is larger than that of the three-dimensional inter-board connection structure 2, the three-dimensional inter-board connection structure 2 receives a tensile force from the first circuit board 24 and protrudes downward. It becomes a shape.

  Therefore, as shown in FIG. 2A, when the convex three-dimensional inter-substrate connection structure 2 and the second circuit board 26 are connected, the size and height of the bumps 22 are set to the convex warpage. It changes according to the shape of. For example, in the above case, on the contact region of the connection terminal electrode as it goes outward from the center line (DD) of warping (hereinafter, in detail, on the contact region of the connection terminal electrode, but simply on the connection terminal electrode) The bumps 22 having a high height are formed.

  Here, as described in the following manufacturing method, stud bumps that form gold bumps using a wire bonder can be used as the bumps 22.

  Next, as shown in FIG. 2B, the connection electrode (not shown) surface of the second circuit board 26 facing the bumps 22 formed on the upper surface connection terminal electrodes of the three-dimensional inter-substrate connection structure 2. On the side, for example, an adhesive layer 28 mainly composed of a thermosetting epoxy resin is applied.

  Then, the bumps 22 of the three-dimensional inter-substrate connection structure 2 are deformed by thermocompression bonding from above the adhesive layer 28, and are brought into pressure contact with connection electrodes (not shown) of the second circuit board 26. Heat cure. At this time, the bumps 22 are pressed against the connection electrodes of the second circuit board 26 due to the thermal contraction of the adhesive layer 28 and are connected to the three-dimensional inter-substrate connection structure 2. This eliminates the need for the second circuit board 26 to be deformed so as to follow the warp of the three-dimensional inter-substrate connection structure 2, so that a connection with a high peel strength can be obtained without generation of stress due to a restoring force from the deformation. . That is, mechanical deformation such as warpage is absorbed by bumps having different sizes, and a uniform connection state between the second circuit board 26 and the three-dimensional inter-substrate connection structure 2 can be realized. As a result, a three-dimensional inter-substrate connection structure having a structure excellent in drop impact and vibration resistance is obtained.

  Here, as a material of the housing 8 of the three-dimensional inter-substrate connection structure 2, an insulating resin such as glass epoxy resin, liquid crystal polymer, polyphenylene sulfide, polybutylene terephthalate, or the like is used. Furthermore, when high shape accuracy, high heat conductivity, and the like are required, an insulating substrate such as a ceramic substrate may be used.

  Further, it is preferable to form the connection terminal electrode, the shield electrode 10 and the ground electrodes 12a and 12b with a metal material having a high conductivity such as copper (Cu), silver (Ag), or aluminum (Al). Furthermore, in order to improve the reliability by preventing the connection stability and the deterioration of each electrode over time, it is desirable to form a film made of, for example, gold on these materials.

  In this embodiment, the example in which the shape of the warp is convex downward has been described, but the present invention is not limited to this. For example, when the thermal expansion coefficient of the first substrate is smaller than the thermal expansion coefficient of the three-dimensional inter-substrate connection structure, the first substrate may be concave. In addition, the circuit board itself may not have a flat shape and may have a shape in which either one is warped. Even in such a case, the bump size on the connection terminal electrode of the three-dimensional inter-substrate connection structure can be easily coped with by designing according to the warpage shape of the circuit board. For example, the bumps may be arranged and formed on the connection terminal electrodes so as to correspond to the distance between the contact surfaces (contact surface gap) between the circuit board to which the bump size is connected and the three-dimensional substrate connection structure.

  In this embodiment, the case where mechanical deformation such as warpage occurs two-dimensionally has been described as an example, but the present invention is not limited to this. For example, for three-dimensional deformation, it goes without saying that the height of bumps formed on the connection terminal electrodes on the other frame sides of the housing 8 may be changed.

  Moreover, in this Embodiment, it was not restricted to this demonstrated in the example which joined the three-dimensional board-connection structure 2 and the 1st circuit board 24 with the solder. For example, an anisotropic conductive sheet or anisotropic conductive resin may be used. This further facilitates connection.

  According to the present embodiment, it is possible to realize a three-dimensional inter-substrate connection structure having different bump shapes for reliable connection such as dropping and impact even between circuit boards having deformation such as warping.

  Further, the shield electrode 10 disposed on the side surface of the outer peripheral portion of the housing 8 and the ground electrodes 12a and 12b disposed on the upper and lower surfaces cause noises and electromagnetic waves generated from the connection terminal electrodes and the high-frequency components mounted on the circuit board. It is possible to effectively shield radiation and external noise.

  A method for manufacturing the three-dimensional inter-substrate connection structure in the first embodiment of the present invention will be described below.

  FIG. 3 is a main process diagram of the method of manufacturing the three-dimensional inter-substrate connection structure according to the first embodiment of the present invention. 3A, 3D, 3G, and 3J are plan views in each manufacturing process of the three-dimensional inter-substrate connection structure. 3B, FIG. 3E, FIG. 3H, and FIG. 3K are cross-sectional views taken along line B-B in each plan view, FIG. 3C, and FIG. 3F. FIGS. 3I and 3L are cross-sectional views taken along the line EE. Note that the BB line is the same as the line passing through the center of the bumps disposed on the plurality of upper surface connection terminal electrodes 18a shown in FIG. 1A, and the position of the EE line is one in the inner periphery. The position of the side is shown.

  First, as shown in FIGS. 3A, 3B, and 3C, an insulating substrate (housing) 30 is prepared by molding a glass epoxy resin or the like, for example.

  Next, as shown in FIGS. 3D, 3E, and 3F, the upper surface, the lower surface, the outer peripheral side surface, and the inner peripheral side surface of the insulating substrate 30 are roughened, for example, A plating catalyst such as a palladium salt is applied to the entire surface. Then, a copper plating layer 32 having a predetermined thickness is formed on the insulating substrate 30 by using, for example, an electroless copper plating method. Specifically, for example, the insulating substrate 30 is immersed in an electroless copper plating solution shown below for 2 hours to deposit about 10 μm thick copper, and the copper plating layer 32 is formed on the entire surface. Here, as the electroless copper plating solution, for example, a copper sulfate pentahydrate / ethylenediaminetetraacetic acid / polyethylene glycol / l2.2-dibilidyl / formaldehyde mixed solution adjusted to PH12.5 with sodium hydroxide is used. And used at a liquid temperature of 70 ° C. It is effective to combine electroless plating and electrolytic copper plating, and the copper plating layer 32 can be formed in a short time.

Next, as shown in FIGS. 3 (G), 3 (H), and 3 (I), an etching resist is applied to the entire surface of the formed copper plating layer 32, and ultraviolet rays are irradiated to form a predetermined layer. An exposure process is performed with a pattern. At this time, as an etching resist, for example, an electrodeposition resist (for example, “Photo ED P-1000” manufactured by Nippon Paint Co., Ltd.) is used, and electrodeposition is performed at 25 ° C. and 50 mA / dm ² for 3 minutes. Apply to a thickness of. Then, a photomask was attached, and ultraviolet rays (scattered light) were irradiated at about 400 mj / cm ² to expose a predetermined pattern. Thereafter, 1% sodium metasilicate at 32 ° C. is sprayed for 120 seconds using a spray device to develop the resist. Thereby, a resist pattern 34 that finally covers the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode, and the shield electrode is obtained.

  Next, as shown in FIG. 3 (J), FIG. 3 (K), and FIG. 3 (L), after forming a resist pattern 34, it is immersed in a 36% solution of ferric chloride at 40 ° C. for 2 to 3 minutes. Then, the copper plating layer 32 is etched. Thereafter, 5% sodium metasilicate at 50 ° C. is sprayed for 120 seconds to remove the resist, and predetermined upper surface connection terminal electrodes 18a and 20a, lower surface connection terminal electrodes 18b and 20b, side surface connection electrodes 18c and 20c, shield electrode 10 and ground Electrodes 12a and 12b are formed.

  Thereafter, a bump 22 such as a gold bump is formed on at least the upper surface connection terminal electrodes 18a and 20a using a wire bonder. Specifically, the tip of the gold wire is melted by discharge to form a ball, and the bump 22 is formed by cutting the wire by applying pressure and heating while applying ultrasonic waves to the upper surface connection terminal electrodes 18a and 20a. It is formed. At this time, the size of the ball can be changed by changing the discharge applied voltage when performing the discharge melting. Thereby, for example, bumps 22 are formed in which the size (size, height, etc.) on the upper surface connection terminal electrode is changed as the distance from the center line (DD) of warpage shown in FIG.

  Through the above steps, for example, the housing has a length of 10.6 mm, a width of 9 mm, a thickness of 0.45 mm, a connection terminal electrode lead-out line width of about 75 μm, and a top connection terminal electrode pitch of about 300 μm. A three-dimensional inter-substrate connection structure corresponding to density mounting is produced.

  In the present embodiment, the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode, the shield electrode, and the like have been described as being formed at the same time. May be.

  In the present embodiment, the entire surface of the insulating substrate is formed with an adhesion promoting layer combining, for example, an epoxy resin and synthetic rubber, a crosslinking agent, a curing agent, and a filler, and the surface is roughened, followed by a plating process. You may do. Thereby, the adhesion strength of the plating to the surface of the insulating substrate can be improved.

  In the present embodiment, it is desirable that the surfaces of the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode, and the shield electrode are plated with gold. Thereby, reliability, such as connection stability and moisture resistance, can be improved.

  In the present embodiment, an example of forming the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode and the shield electrode by using an electroless plating method, a photolithography technique and an etching technique will be described. However, it is not limited to this. For example, any method that can form a pattern with a predetermined film thickness can be applied without particular limitation.

  In addition, although the said manufacturing method demonstrated by the example which forms each electrode with a resist pattern after forming a plating layer, it is not restricted to this. For example, after forming a resist pattern, a plating layer may be formed, and each electrode may be formed by a lift-off method or the like. In this case, the position of the resist pattern is formed so as to cover a region other than each electrode finally obtained.

(Second Embodiment)
The three-dimensional inter-substrate connection structure in the second embodiment of the present invention will be described below.

  4A is a plan view showing a configuration of the three-dimensional inter-substrate connection structure 36 according to the second embodiment of the present invention, and FIGS. 4B, 4C, and 4D are respectively shown. It is the sectional view on the AA line in FIG. 4 (A), the BB sectional drawing, and the CC sectional view.

  The second embodiment of the present invention is different from the first embodiment in that solder bumps are provided as bumps. In the following, therefore, differences between the configuration and the manufacturing method of the first embodiment will be mainly described. In addition, the same code | symbol is attached | subjected and demonstrated to the same element as 1st Embodiment.

  As shown in FIG. 4, the three-dimensional inter-substrate connection structure 36 is similar to the first embodiment in that the upper surface connection terminal electrodes 18 a and 20 a, the ground electrode 12 a, and the ground electrode 12 a are formed on the upper surface 14 of the glass epoxy resin housing 8. On the lower surface 16, there are provided lower surface connection terminal electrodes 18 b and 20 b, a ground electrode 12 b, a shield electrode 10 on the side surface of the outer peripheral portion 4, and side connection electrodes 18 c and 20 c on the side surface of the inner peripheral portion 6.

  As shown in FIGS. 4C and 4D, the upper surface connection terminal electrodes 18a and 20a of the three-dimensional inter-substrate connection structure 36 are moved away from the center line (DD) of warpage. Therefore, a plurality of solder bumps 38 having different sizes are formed. At this time, as will be described in detail with reference to FIG. 5 below, the size (size, height, etc.) of the solder bump 38 corresponds to the deformation of the three-dimensional inter-substrate connection structure 36 such as warpage. Formed in shape.

  Accordingly, mechanical deformation such as warping of the circuit board to be connected can be effectively absorbed via the three-dimensional inter-substrate connection structure.

  Hereinafter, a mechanism for absorbing mechanical deformation such as warping of a circuit board using the three-dimensional inter-substrate connection structure according to the second embodiment of the present invention will be warped as in the first embodiment. This will be explained.

  FIG. 5A is a cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure joined to the first circuit board in the second embodiment of the present invention to the second circuit board. FIG. 5B is a cross-sectional view showing a state when the three-dimensional inter-substrate connection structure bonded to the first circuit board is bonded to the second circuit board.

  As shown in FIG. 5A, the connection electrode (not shown) of the first circuit board 24 and the lower surface connection terminal electrode 18b of the three-dimensional inter-substrate connection structure 36 are joined by solder or the like (lower surface connection terminal electrode). 20b, the thermal expansion coefficients of the first circuit board 24 and the three-dimensional inter-substrate connection structure 36 are different. For example, when the thermal expansion coefficient of the first circuit board 24 is larger than that of the three-dimensional inter-board connection structure 36, the three-dimensional inter-board connection structure 36 receives a tensile force from the first circuit board 24 and protrudes downward. It becomes a shape.

  Therefore, as shown in FIG. 5A, when connecting the convex three-dimensional inter-substrate connection structure 36 and the second circuit board 26, the size and height of the solder bumps 38 are set to be convex. Change according to the shape of the warp. For example, in the above case, a solder bump 38 of a height such as tin, silver, copper (SnAgCu) is formed on the connection terminal electrode as it goes outward from the warp center line (DD). It is.

  Note that the size (height, size, etc.) of the solder bump 38 can be controlled by the amount of solder inserted into the opening of the resist pattern at the time of manufacture, as will be described in the following manufacturing method.

  Next, as shown in FIG. 5B, the solder bumps 38 formed on the upper surface connection terminal electrodes of the three-dimensional inter-substrate connection structure 36 are heated and pressed to connect the connection electrodes (not shown) of the second circuit board 26. 2) Solder is melted and joined. In this case, unlike the first embodiment, the connection terminal of the second circuit board 26 is directly joined.

  Thereby, mechanical deformation such as warpage can be absorbed by the solder bumps 38 having different sizes, and a firm connection can be obtained. Further, as in the first embodiment, an adhesive layer 28 mainly composed of a thermosetting epoxy resin may be applied around the connection electrode (not shown) of the second circuit board 26 and cured. Good.

  Below, the manufacturing method of the three-dimensional board-to-board connection structure in the 2nd Embodiment of this invention is demonstrated.

  FIG. 6 is a main process diagram of the method for manufacturing the three-dimensional inter-substrate connection structure according to the second embodiment of the present invention. 6A, 6D, 6G, and 6J are plan views in each manufacturing process of the three-dimensional inter-substrate connection structure. 6B, FIG. 6E, FIG. 6H, and FIG. 6K are cross-sectional views taken along line BB in each plan view, FIG. 6C, and FIG. 6F. 6 (I) and FIG. 6 (L) are sectional views taken along the line EE.

  First, as shown in FIG. 6A, FIG. 6B, and FIG. 6C, an insulating substrate (housing) 30 is prepared by molding, for example, glass epoxy resin.

  Next, as shown in FIGS. 6 (D), 6 (E), and 6 (F), an etching resist is applied to the entire surface of the molded insulating substrate 30, and ultraviolet rays are irradiated to form a predetermined pattern. The resist pattern 34 is obtained by performing exposure / development processing with the pattern.

  Next, as shown in FIGS. 6 (G), 6 (H), and 6 (I), the surface on which the insulating substrate 30 on which the resist pattern 34 is not formed is roughened, for example, palladium salt or the like. The plating catalyst is applied to the whole. Then, a copper plating layer 32 having a predetermined thickness is formed on the entire surface by using an electroless copper plating method. Thereafter, at least in the opening corresponding to the position of the upper surface connection terminal electrode, the amount of solder such as SnAgCu based on the copper plating layer 32 in the opening formed by the resist pattern 34 is set to the center line (DD) of the warp. The upper surface connection terminal electrodes 18a and 20a that are farther away from each other are inserted as many as possible, and the size of the solder bumps 38 is controlled. That is, the size of the solder bump 38 is reduced as the warp center increases and increases as the distance increases. Since the solder is inserted into the opening of the resist pattern 34, there is no problem of flowing into an electrical contact with the adjacent upper surface connection terminal electrode.

  Next, as shown in FIGS. 6 (J), 6 (K), and 6 (L), the resist pattern is lifted off, and the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode, and the shield. An electrode is formed.

  Through the above steps, the three-dimensional inter-substrate connection structure 36 shown in FIG. 4 is produced.

  Note that resist application, exposure conditions and materials, and conditions and materials for the electroless copper plating method are the same as those in the first embodiment.

(Third embodiment)
Hereinafter, a three-dimensional inter-substrate connection structure according to the third embodiment of the present invention will be described.

  FIG. 7A is a plan view showing the configuration of the three-dimensional inter-substrate connection structure 36 according to the third embodiment of the present invention, and FIGS. 7B, 7C, and 7D are respectively shown. It is the sectional view on the AA line in FIG. 7 (A), the BB sectional view, and the CC sectional view.

  In the third embodiment of the present invention, bumps (hereinafter referred to as “substrate bumps”) are formed by forming protrusions having different shapes (particularly heights) on the insulating substrate itself instead of stud bumps or solder bumps. In this respect, this embodiment is different from the first embodiment and the second embodiment. Therefore, the following description will mainly focus on differences from the configuration and the manufacturing method of the first embodiment and the second embodiment. In addition, the same code | symbol is attached | subjected and demonstrated to the same element as 1st Embodiment or 2nd Embodiment.

  As shown in FIG. 7, in the three-dimensional inter-substrate connection structure 40, a protrusion 44 is formed on at least the upper surface 14 of the glass epoxy resin housing 46, and the upper surface connection terminal electrodes 18a, 20a are covered so as to cover the protrusion 44. Is formed and the substrate bump 42 is provided. Similarly to the first embodiment, the upper surface connection terminal electrodes 18 a and 20 a and the ground electrode 12 a are formed on the upper surface 14 of the housing 46, and the lower surface connection terminal electrodes 18 b and 20 b and the ground electrode are formed on the lower surface 16. 12 b, the shield electrode 10 is provided on the side surface of the outer peripheral portion 4, and the side connection electrodes 18 c and 20 c are provided on the side surface of the inner peripheral portion 6.

  As shown in FIGS. 7C and 7D, the three-dimensional inter-substrate connection structure 40 has a plurality of substrate bumps 42 that increase in size as the distance from the center line (DD) of warpage increases. Is provided. At this time, the size (size, height, etc.) of the substrate bump 42 is formed by setting the size of the protrusion 44 on the surface of the housing 46 in advance at the time of molding, corresponding to the amount of deformation of the circuit board. .

  Thereby, uniform contact can be realized against mechanical deformation such as warpage of the circuit board to be connected via the three-dimensional inter-substrate connection structure.

  Hereinafter, a mechanism for absorbing mechanical deformation such as warping of the circuit board using the three-dimensional inter-substrate connection structure according to the third embodiment of the present invention will be warped as in the first embodiment. This will be explained.

  FIG. 8A is a cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure joined to the first circuit board in the third embodiment of the present invention to the second circuit board. FIG. 8B is a cross-sectional view showing a state when the three-dimensional inter-substrate connection structure bonded to the first circuit board is bonded to the second circuit board.

  As shown in FIG. 8A, the connection electrode (not shown) of the first circuit board 24 and the lower surface connection terminal electrode 18b of the three-dimensional inter-substrate connection structure 40 are joined by solder or the like (lower surface connection terminal electrode). 20b), the thermal expansion coefficients of the first circuit board 24 and the three-dimensional inter-substrate connection structure 40 are different. For example, when the thermal expansion coefficient of the first circuit board 24 is larger than that of the three-dimensional inter-board connection structure 40, the three-dimensional inter-board connection structure 40 receives a tensile force from the first circuit board 24 and protrudes downward. It becomes a shape.

  Therefore, as shown in FIG. 8A, when the convex three-dimensional inter-substrate connection structure 40 and the second circuit board 26 are connected, the size and height of the substrate bumps 42 are set to convex warpage. It changes according to the shape of. For example, in the above case, a substrate bump 42 having a larger size is formed on the connection terminal electrode from the center line (DD) of warpage toward the outside.

  Next, as shown in FIG. 8B, the substrate bumps 42 are formed on the three-dimensional inter-substrate connection structure 40 so as to be covered with the upper surface connection terminal electrodes 18a and 20a of the copper plating layer 32, for example. An adhesive layer 28 mainly composed of, for example, a thermosetting epoxy resin is applied to the surface side of the connection electrode (not shown) of the second circuit board 26.

  Then, the substrate bump 42 of the three-dimensional inter-substrate connection structure 40 is thermocompression-bonded from above the adhesive layer 28 to deform the copper plating layer 32 that covers the tip of the substrate bump 42 to connect the connection terminal electrode of the second circuit board 26. (Not shown), and the adhesive layer 28 is thermally cured. At this time, the substrate bumps 42 are pressed against the connection terminal electrodes of the second circuit board 26 by the thermal contraction of the adhesive layer 28, and are uniformly connected to the three-dimensional inter-substrate connection structure 40. That is, even a circuit board having mechanical deformation such as warpage can be uniformly connected by board bumps having different sizes. Further, since the connection can be made uniformly, it is not necessary to partially deform the bump, and connection with a low load is possible.

  Below, the manufacturing method of the connection structure between three-dimensional boards in the 3rd Embodiment of this invention is demonstrated.

  FIG. 9 is a main process diagram of the method of manufacturing the three-dimensional inter-substrate connection structure according to the third embodiment of the present invention. 9A, 9D, 9G, and 9J are plan views in each manufacturing process of the three-dimensional inter-substrate connection structure. 9B, FIG. 9E, FIG. 9H, and FIG. 9K are cross-sectional views taken along line BB in each plan view, FIG. 9C, and FIG. 9F. 9 (I) and FIG. 9 (L) are cross-sectional views taken along the line EE.

  First, as shown in FIGS. 9 (A), 9 (B), and 6 (C), for example, a glass epoxy resin or the like is molded and a plurality of protrusions 44 having different sizes are integrally formed. A substrate (housing) 47 is prepared. At this time, the protrusion 44 is formed to correspond to the warp of the circuit board or the like, for example, when it is downward and convex, the size is smaller as it is closer to the warp center line (DD), and the size is larger as it is farther away. The

  Next, as shown in FIGS. 9D, 9E, and 9F, the upper surface, the lower surface, the outer peripheral side surface, and the inner peripheral side surface of the insulating substrate 47 including the protrusions 44 are arranged. After roughening, for example, a plating catalyst such as a palladium salt is applied to the entire surface. And the copper plating layer 32 of predetermined thickness is formed using an electroless copper plating method.

  Next, as shown in FIGS. 9 (G), 9 (H), and 9 (I), an etching resist is applied over the formed copper plating layer 32 and irradiated with ultraviolet rays to form a predetermined Perform exposure and development with patterns. Thereby, a resist pattern 34 that finally covers the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode, and the shield electrode is obtained.

  Next, as shown in FIGS. 9J, 9K, and 9L, after forming a resist pattern 34, copper is etched with a predetermined solution. Then, the resist pattern 34 is peeled off to form predetermined upper surface connection terminal electrodes 18a and 20a, lower surface connection terminal electrodes 18b and 20b, side surface connection electrodes 18c and 20c, shield electrode 10 and ground electrodes 12a and 12b. At this time, the substrate bump 42 including the protrusion 44 covered with the copper plating layer 32 is formed in a predetermined shape. Through the above steps, the three-dimensional inter-substrate connection structure 40 shown in FIG. 7 is produced.

  The conditions and materials used for the resist and the conditions and materials used for the electroless copper plating method are the same as those in the first embodiment.

  Moreover, although the said manufacturing method demonstrated the example which forms each electrode with a resist pattern after forming a plating layer like 1st Embodiment, it is not restricted to this. For example, after forming a resist pattern, a plating layer may be formed, and each electrode may be formed by a lift-off method or the like. In this case, the position of the resist pattern is formed so as to cover a region other than each electrode finally obtained.

  Hereinafter, another example of the method for manufacturing the three-dimensional inter-substrate connection structure according to the third embodiment of the present invention will be described with reference to FIG. Note that FIG. 10A to FIG. 10F are the same as the manufacturing steps described above, and thus description thereof is omitted.

  That is, as shown in FIGS. 10G, 10H, and 10I, for example, a copper plating layer 32 is formed on the entire surface of the insulating substrate (housing) 47, and then a laser beam is used. Directly, the copper plating layer 32 at portions other than the upper surface connection terminal electrode, the lower surface connection terminal electrode, the side surface connection electrode, the ground electrode and the shield electrode is removed and patterned.

  Thereby, the three-dimensional inter-substrate connection structure 40 in which the substrate bumps 42 as shown in FIG. 7 are formed can be easily manufactured.

  According to the above embodiment, the resist processing / development process can be omitted, the process can be simplified, and the productivity can be improved.

  In the above manufacturing method, a laser beam is used, but an electron beam is also effective.

(Fourth embodiment)
The three-dimensional inter-substrate connection structure in the fourth embodiment of the present invention will be described below.

  FIG. 11A is a plan view showing the configuration of the three-dimensional inter-substrate connection structure 48 in the fourth embodiment of the present invention, and FIG. 11B, FIG. 11C, and FIG. They are AA sectional view taken on the line in FIG. 11 (A), BB sectional drawing, and CC sectional view.

  The fourth embodiment of the present invention is different from the above-described embodiments in that no shield electrode is provided on the outer peripheral side surface of the housing. Hereinafter, differences from the configuration of each of the above embodiments will be mainly described. In addition, the same code | symbol is attached | subjected and demonstrated to the same element as said each embodiment.

  In general, the shield electrode is not always necessary depending on the type of signal handled on the circuit board. Therefore, when the shield electrode is not necessary, side connection electrodes are provided on both the outer peripheral portion 4 and the inner peripheral portion 6 of the frame-shaped frame-shaped housing 8 of the same size as in the present embodiment. be able to. Hereinafter, as in the first embodiment, an example in which stud bumps are used as bumps on the upper surface connection terminal electrodes will be described. The method for manufacturing the three-dimensional inter-substrate connection structure is also different from the resist pattern for forming each electrode, but is basically the same as that in the first embodiment, and thus the description thereof is omitted.

  As shown in FIG. 11, the three-dimensional inter-substrate connection structure 48 includes a housing 8 made of, for example, a frame-shaped frame-shaped glass epoxy resin having a rectangular outer peripheral portion 4 and an inner peripheral portion 6. In addition, a plurality of connection terminal electrodes 18 and 50 arranged in a staggered pattern on the upper surface 14 and the lower surface 16 of the housing 8 are provided. The connection terminal electrode 18 includes an upper surface connection terminal electrode 18a formed on the upper surface 14, a lower surface connection terminal electrode 18b formed on the lower surface 16, and a side connection electrode 18c formed on the side surface of the inner peripheral portion 6. And formed integrally. On the other hand, the connection terminal electrode 50 is configured by integrally forming an upper surface connection terminal electrode 50 a, a lower surface connection terminal electrode 50 b, and a side connection electrode 50 c formed on the side surface of the outer peripheral portion 4. Furthermore, the upper surface connection terminal electrode and the lower surface connection terminal electrode are composed of a contact region arranged in a staggered pattern that contacts the connection terminal of the circuit board to be connected, and a lead region that is drawn from the contact region and connected to the side connection electrode. ing.

  Similarly to the first embodiment, a plurality of bumps 22 such as stud bumps are formed on at least the contact regions of the upper surface connection terminal electrodes 18a and 50a (connection electrodes on the circuit board (not shown)). ) Is formed at a position corresponding to). At this time, the size (size, height, etc.) of the bump 22 is formed in a shape corresponding to the deformation of the three-dimensional inter-substrate connection structure 48 such as warpage.

  Accordingly, mechanical deformation such as warping of the circuit board to be connected can be effectively absorbed via the three-dimensional inter-substrate connection structure.

  In addition, the distance between the side connection electrodes from the upper surface to the lower surface of the housing can be widened, and the lead region for wiring between adjacent upper surface connection terminal electrodes as in the first embodiment can be eliminated. As a result, it is possible to reduce mutual interference such as noise and electromagnetic wave radiation between adjacent side surface connection electrodes and increase the number of connection terminal electrodes.

  Further, since the ground electrode can be omitted, a connection terminal electrode can be further formed in the region, and the number of connection terminal electrodes can be increased.

  In order to further increase the number of connection terminal electrodes, the connection terminal electrode configuration shown in FIG. 12 described below can be employed.

  FIG. 12A is a plan view showing another example of the three-dimensional inter-substrate connection structure in the fourth embodiment of the present invention, FIG. 12B, FIG. 12C, and FIG. These are the sectional view on the AA line in FIG. 12 (A), the sectional view on the BB line, and the sectional view on the CC line, respectively.

  As shown in FIG. 12, the three-dimensional inter-substrate connection structure 52 includes an upper surface connection terminal electrode 20 a and an upper surface connection terminal electrode 50 a on the upper surface 14, and a lower surface connection terminal electrode 20 b and a lower surface connection terminal electrode on the lower surface 16. 50b is arranged so as to face each other. The upper surface connection terminal electrode 20a and the lower surface connection terminal electrode 20b are connected to the side surface connection electrode 20c on the side surface of the inner peripheral portion 6, and the upper surface connection terminal electrode 50a and the lower surface connection terminal electrode 50b are side surfaces on the side surface of the outer peripheral portion 4. It is electrically connected to the connection electrode 50c.

  Thereby, the three-dimensional inter-substrate connection structure 52 in which the number of connection terminal electrodes is significantly increased can be realized. Similarly, as shown in FIG. 12, it is possible to further increase by arranging connection terminal electrodes in the four corner regions of the housing 8.

  In the present embodiment, the stud bump is described as an example of the bump. However, a solder bump and a substrate bump can be similarly configured.

  In each of the above embodiments, bumps are arranged only on one side of the three-dimensional inter-substrate connection structure, but needless to say, bumps may be provided on both sides as necessary.

(Fifth embodiment)
The three-dimensional circuit device according to the fifth embodiment of the present invention will be described below.

  FIG. 13A is a perspective view showing a configuration of a three-dimensional circuit device according to the fifth embodiment of the present invention, and FIG. 13B is a partially enlarged sectional view of FIG.

  In the following description, the three-dimensional inter-substrate connection structure 2 described in the first embodiment is used, and the same reference numerals are given to the same elements as those in the first embodiment. Further, in FIG. 13A, for ease of explanation, a part of the wiring pattern of the circuit board is omitted, and the three-dimensional inter-substrate connection structure 2 sandwiched between the circuit boards is shown in a perspective view. ing.

  As shown in FIG. 13, the three-dimensional circuit device 54 has a configuration in which the first circuit board 24 and the second circuit board 26 are connected to face each other with the three-dimensional inter-substrate connection structure 2 interposed therebetween.

  Here, a circuit component 56 made of an IC chip such as a high-frequency circuit is placed on the first circuit board 24 so that the first circuit board 24 fits in the inner peripheral portion 6 of the three-dimensional inter-substrate connection structure 2. The wiring terminals 60 are connected to the connection terminals (not shown) of the wiring pattern 60 formed by soldering, for example, and mounted at predetermined positions.

  The lower surface connection terminal electrodes 18b and 20b of the three-dimensional inter-substrate connection structure 2 and the connection terminals (not shown) of the predetermined wiring pattern 60 of the first circuit board 24 are connected by solder or the like. Further, the bumps 22 on the upper surface connection terminal electrodes 18a and 20a of the three-dimensional inter-substrate connection structure 2 and the connection terminals (not shown) of a predetermined wiring pattern 62 provided on the second circuit board 26 are connected. Yes.

  In addition, the ground electrode 12a provided in the three-dimensional inter-substrate connection structure 2 and the first circuit board 24, and the ground electrode 12b and the ground wiring patterns 64 and 66 provided in the second circuit board 26, respectively, are connected. To earth potential.

  Furthermore, the ground electrodes 12 a and 12 b are connected to the shield electrode 10 provided in the three-dimensional inter-substrate connection structure 2.

  As a result, the circuit component 56, the upper surface connection terminal electrodes 18a and 20a, the lower surface connection terminal electrodes 18b and 20b, and the side surface connection electrodes 18c and 20c included in the three-dimensional inter-substrate connection structure 2 are shielded, and external noise and Emission of internal noise generated in the connection terminal electrode and the circuit component 56 is efficiently shielded.

  According to the present embodiment, mechanical deformation such as warpage is effectively absorbed between a plurality of circuit boards via a three-dimensional board-to-board connection structure having bumps of different sizes and having shield electrodes. Can be connected well. Furthermore, it is possible to realize a thin three-dimensional circuit device with excellent reliability that does not cause malfunction due to noise or the like.

  In this embodiment, the example in which circuit components are mounted on the first circuit board has been described, but the present invention is not limited to this. For example, the circuit components may be mounted on the second circuit board or on both the first circuit board and the second circuit board. As a result, a large number of circuit components that require shielding can be mounted.

  In the present embodiment, the three-dimensional board-to-board connection structure 2 of the first embodiment has been described. However, the three-dimensional board-to-board connection structure described in the above embodiments may be used. , Have the same effect.

  In the present embodiment, an example in which two circuit boards are connected via a three-dimensional inter-substrate connection structure has been described. However, the present invention is not limited to this. For example, a plurality of three or more sheets may be connected in multiple stages via a three-dimensional inter-substrate connection structure. Thereby, since the circuit component which needs a shield can be shielded independently, electromagnetic interference can be prevented beforehand. In addition, since a plurality of circuit boards can be relayed separately, it is possible to easily cope with complicated circuit board arrangements. Furthermore, the plurality of three-dimensional inter-substrate connection structures can make the structure of the three-dimensional circuit device easy to improve and handle.

  Moreover, in each said embodiment, although the example which provided the connection terminal electrode over the perimeter of the housing demonstrated, it is not restricted to this. For example, when the housing shape is a quadrangle, it may be partially provided such as one side, opposite sides, or three sides.

  Moreover, in each said embodiment, although the frame-shaped housing was demonstrated to the example, it is not restricted to this. For example, it is good also as arbitrary shapes according to the structure to connect, such as circular and a polygon.

  The three-dimensional inter-substrate connection structure according to the present invention, the manufacturing method thereof, and the three-dimensional circuit device using the same are useful in technical fields such as portable information devices that are becoming lighter and thinner.

(A) Plan view showing the configuration of the three-dimensional inter-substrate connection structure in the first embodiment of the present invention (B) Cross-sectional view taken along the line A-A in FIG. 1 (A) (C) in FIG. BB sectional view (D) CC sectional view of FIG. 1 (A) (A) Cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure bonded to the first circuit board in the embodiment to the second circuit board. (B) Bonded to the first circuit board. Sectional drawing which shows a state when the three-dimensional inter-substrate connection structure is joined to the second circuit board The main process drawing of the manufacturing method of the connection structure between three-dimensional boards in the embodiment (A) Plan view showing the configuration of the three-dimensional inter-substrate connection structure according to the second embodiment of the present invention (B) A-A line cross-sectional view of FIG. 4 (A) (C) FIG. 4 (A) BB line sectional view (D) CC line sectional view of FIG. 4 (A) (A) Cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure bonded to the first circuit board in the embodiment to the second circuit board. (B) Bonded to the first circuit board. Sectional drawing which shows a state when the three-dimensional inter-substrate connection structure is joined to the second circuit board The main process drawing of the manufacturing method of the connection structure between three-dimensional boards in the embodiment (A) Plan view showing the configuration of the three-dimensional inter-substrate connection structure in the third embodiment of the present invention (B) AA cross-sectional view of FIG. 7 (A) (C) FIG. 7 (A) BB sectional view (D) CC sectional view of FIG. 7 (A) (A) Cross-sectional view showing a state before connecting the three-dimensional inter-substrate connection structure bonded to the first circuit board in the embodiment to the second circuit board. (B) Bonded to the first circuit board. Sectional drawing which shows a state when the three-dimensional inter-substrate connection structure is joined to the second circuit board The main process drawing of the manufacturing method of the connection structure between three-dimensional boards in the embodiment Process drawing which shows another example of the manufacturing method of the connection structure between three-dimensional boards in the embodiment (A) Plan view showing the configuration of the three-dimensional inter-substrate connection structure according to the fourth embodiment of the present invention (B) A-A line cross-sectional view of FIG. 11 (A) (C) of FIG. 11 (A) BB sectional view (D) CC sectional view of FIG. 11 (A) (A) Plan view showing another example of the three-dimensional inter-substrate connection structure according to the fourth embodiment of the present invention (B) A cross-sectional view taken along line AA in FIG. 12 (A) (C) FIG. BB line sectional view of () (D) CC line sectional view of FIG. 12 (A) (A) Perspective view showing the configuration of the three-dimensional circuit device according to the fifth embodiment of the present invention (B) Partial enlarged sectional view of FIG. 13 (A)

Explanation of symbols

2, 36, 40, 48, 52 Three-dimensional inter-substrate connection structure 4 Outer peripheral portion 6 Inner peripheral portion 8, 46 Housing 10 Shield electrode 12a, 12b Ground electrode 14 Upper surface 16 Lower surface 18, 20, 50 Connection terminal electrode 18a , 20a, 50a Upper surface connection terminal electrodes 18b, 20b, 50b Lower surface connection terminal electrodes 18c, 20c, 50c Side connection electrodes 22 Bumps 24 First circuit board 26 Second circuit board 28 Adhesive layer 30, 47 Insulating substrate 32 Copper Plating layer 34 Resist pattern 38 Solder bump 42 Substrate bump 44 Protrusion 54 Solid circuit device 56 Circuit component 60, 62 Wiring pattern 64, 66 Ground wiring pattern

Claims (6)

A frame-shaped housing having an inner periphery and an outer periphery;
A plurality of connection terminal electrodes connecting the upper and lower surfaces of the housing;
A three-dimensional inter-substrate connection structure having bumps provided on the plurality of connection terminal electrodes on one surface of the housing;
The bump includes a first bump located on the connection terminal electrode closer to the outer peripheral portion than the inner peripheral portion, and a second bump located on the connection terminal electrode closer to the inner peripheral portion than the outer peripheral portion. Have
Further, the bump is arranged in a staggered arrangement of the first bump and the second bump over the entire circumference of the housing on the one surface .
The three-dimensional inter-substrate connection structure, wherein the plurality of connection terminal electrodes are provided on the upper and lower surfaces of the housing through both side surfaces of the inner peripheral portion and the outer peripheral portion. A shield electrode is formed on a side surface of the outer peripheral portion of the housing,
Three-dimensional inter-board connection structure according to claim 1, characterized in that the ground electrode connected to the shield electrode on the upper and lower surfaces of the housing are formed. The three-dimensional inter-substrate connection structure according to claim 1 , wherein the bumps are formed by stud bumps. 2. The three-dimensional inter-substrate connection structure according to claim 1 , wherein the bump is constituted by a substrate bump including a protrusion formed on at least one surface of the housing. The three-dimensional inter-substrate connection structure according to claim 1 , wherein the bump is formed of a solder bump. A three-dimensional circuit device comprising at least a first circuit board and a second circuit board connected to each other through the three-dimensional inter-substrate connection structure according to any one of claims 1 to 5. .

Images