JP5046521B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5046521B2
JP5046521B2 JP2006010197A JP2006010197A JP5046521B2 JP 5046521 B2 JP5046521 B2 JP 5046521B2 JP 2006010197 A JP2006010197 A JP 2006010197A JP 2006010197 A JP2006010197 A JP 2006010197A JP 5046521 B2 JP5046521 B2 JP 5046521B2
Authority
JP
Japan
Prior art keywords
insulating film
film
substrate
light emitting
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006010197A
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English (en)
Japanese (ja)
Other versions
JP2007194040A (ja
JP2007194040A5 (OSRAM
Inventor
聖子 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006010197A priority Critical patent/JP5046521B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US11/652,487 priority patent/US7812524B2/en
Priority to KR20070004225A priority patent/KR101495887B1/ko
Publication of JP2007194040A publication Critical patent/JP2007194040A/ja
Publication of JP2007194040A5 publication Critical patent/JP2007194040A5/ja
Priority to US12/874,372 priority patent/US8283859B2/en
Priority to US13/612,249 priority patent/US8710734B2/en
Application granted granted Critical
Publication of JP5046521B2 publication Critical patent/JP5046521B2/ja
Priority to KR1020130086375A priority patent/KR101469935B1/ko
Priority to US14/256,660 priority patent/US9356048B2/en
Priority to US15/162,667 priority patent/US9704940B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2006010197A 2006-01-18 2006-01-18 発光装置 Expired - Fee Related JP5046521B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006010197A JP5046521B2 (ja) 2006-01-18 2006-01-18 発光装置
US11/652,487 US7812524B2 (en) 2006-01-18 2007-01-12 Light emitting device
KR20070004225A KR101495887B1 (ko) 2006-01-18 2007-01-15 발광 장치
US12/874,372 US8283859B2 (en) 2006-01-18 2010-09-02 Light emitting device
US13/612,249 US8710734B2 (en) 2006-01-18 2012-09-12 Light emitting device
KR1020130086375A KR101469935B1 (ko) 2006-01-18 2013-07-22 발광 장치
US14/256,660 US9356048B2 (en) 2006-01-18 2014-04-18 Light emitting device
US15/162,667 US9704940B2 (en) 2006-01-18 2016-05-24 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006010197A JP5046521B2 (ja) 2006-01-18 2006-01-18 発光装置

Publications (3)

Publication Number Publication Date
JP2007194040A JP2007194040A (ja) 2007-08-02
JP2007194040A5 JP2007194040A5 (OSRAM) 2009-03-05
JP5046521B2 true JP5046521B2 (ja) 2012-10-10

Family

ID=38262551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006010197A Expired - Fee Related JP5046521B2 (ja) 2006-01-18 2006-01-18 発光装置

Country Status (3)

Country Link
US (5) US7812524B2 (OSRAM)
JP (1) JP5046521B2 (OSRAM)
KR (2) KR101495887B1 (OSRAM)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5046521B2 (ja) * 2006-01-18 2012-10-10 株式会社半導体エネルギー研究所 発光装置
US7863612B2 (en) 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
JP4623068B2 (ja) * 2007-09-12 2011-02-02 ソニー株式会社 表示パネル、表示パネルモジュール及び電子機器
USD637166S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
JP1437719S (OSRAM) * 2010-04-09 2015-03-30
USD638379S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD638382S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD643820S1 (en) * 2010-04-09 2011-08-23 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD638383S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD638381S1 (en) * 2010-04-09 2011-05-24 Panasonic Electric Works Co., Ltd. Electroluminescence module
USD637165S1 (en) * 2010-04-09 2011-05-03 Panasonic Electric Works Co., Ltd. Electroluminescence module
KR101953724B1 (ko) * 2011-08-26 2019-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법
JP6142151B2 (ja) * 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
US12302698B2 (en) 2012-07-31 2025-05-13 Jdi Design And Development G.K. Display unit with moisture proof film outside of seal section and electronic apparatus with said display unit
KR102052746B1 (ko) * 2013-07-29 2019-12-06 엘지디스플레이 주식회사 면 봉지 방식의 유기발광 다이오드 표시장치
KR102360783B1 (ko) 2014-09-16 2022-02-10 삼성디스플레이 주식회사 디스플레이 장치
TWI606771B (zh) * 2015-04-01 2017-11-21 群創光電股份有限公司 顯示面板
KR102451728B1 (ko) * 2015-05-19 2022-10-07 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
WO2017131078A1 (ja) * 2016-01-28 2017-08-03 シャープ株式会社 アクティブマトリクス基板およびその製造方法
CN109243305B (zh) * 2018-09-17 2021-10-12 京东方科技集团股份有限公司 显示面板、显示装置和显示面板的制造方法
CN111370439A (zh) 2018-12-07 2020-07-03 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置
CN109728195B (zh) * 2018-12-29 2021-05-18 厦门天马微电子有限公司 显示面板以及显示装置
KR102879863B1 (ko) * 2019-10-14 2025-11-04 삼성디스플레이 주식회사 표시 장치
CN113867053B (zh) * 2020-06-30 2023-05-16 京东方科技集团股份有限公司 显示面板及其制备方法
US12176333B2 (en) 2021-06-24 2024-12-24 Hefei Boe Optoelectronics Technology Co., Ltd. Backplane and method for manufacturing the same, backlight module, and display apparatus

Family Cites Families (26)

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US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
US7294517B2 (en) * 2001-06-18 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of fabricating the same
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JP4240276B2 (ja) * 2002-07-05 2009-03-18 株式会社半導体エネルギー研究所 発光装置
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JP3915806B2 (ja) * 2003-11-11 2007-05-16 セイコーエプソン株式会社 電気光学装置および電子機器
JP4131243B2 (ja) 2004-02-06 2008-08-13 セイコーエプソン株式会社 電気光学装置の製造方法、電気光学装置、及び電子機器
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JP2005340020A (ja) * 2004-05-27 2005-12-08 Hitachi Displays Ltd 有機エレクトロルミネッセンス表示装置およびその製造方法
US7550769B2 (en) * 2004-06-11 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and semiconductor device
US8217396B2 (en) * 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
US20060250078A1 (en) * 2005-05-09 2006-11-09 City University Of Hong Kong Organic electroluminescent devices incorporating UV-illuminated fluorocarbon layers
US7838347B2 (en) 2005-08-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP5046521B2 (ja) * 2006-01-18 2012-10-10 株式会社半導体エネルギー研究所 発光装置

Also Published As

Publication number Publication date
JP2007194040A (ja) 2007-08-02
KR20130098945A (ko) 2013-09-05
US9356048B2 (en) 2016-05-31
US20100327739A1 (en) 2010-12-30
US8283859B2 (en) 2012-10-09
US20070164675A1 (en) 2007-07-19
KR20070076481A (ko) 2007-07-24
US20140306228A1 (en) 2014-10-16
KR101469935B1 (ko) 2014-12-08
US9704940B2 (en) 2017-07-11
US8710734B2 (en) 2014-04-29
US20130001608A1 (en) 2013-01-03
US7812524B2 (en) 2010-10-12
US20160268365A1 (en) 2016-09-15
KR101495887B1 (ko) 2015-02-25

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