JP5036059B2 - Semiconductor device testing equipment - Google Patents

Semiconductor device testing equipment Download PDF

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JP5036059B2
JP5036059B2 JP2008003699A JP2008003699A JP5036059B2 JP 5036059 B2 JP5036059 B2 JP 5036059B2 JP 2008003699 A JP2008003699 A JP 2008003699A JP 2008003699 A JP2008003699 A JP 2008003699A JP 5036059 B2 JP5036059 B2 JP 5036059B2
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semiconductor device
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test apparatus
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JP2009168471A (en
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伸一 村井
章雄 望月
信一 高村
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株式会社多摩川電子
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Description

本発明は、高温状態で信頼性等の検証を可能にする半導体装置の試験装置に関する。   The present invention relates to a semiconductor device testing apparatus that enables verification of reliability and the like in a high temperature state.

高温状態にある試験対象の半導体素子に所定の周波数の試験信号を印加し、半導体素子における試験信号の変化状態から試験対象半導体素子の特性、寿命等の信頼性を検証する所謂バーンイン試験装置は、高周波用半導体素子の試験装置として広く使用されている。   A so-called burn-in test apparatus that applies a test signal of a predetermined frequency to a semiconductor element to be tested in a high temperature state and verifies the reliability of the test target semiconductor element from the change state of the test signal in the semiconductor element, such as the life, Widely used as a testing device for high-frequency semiconductor elements.

この試験装置の一例として、刊行物に記載されたものではないが図5に示すような試験装置(以下、第1従来技術という)がある。即ち、図5は、自己発熱により高温状態となる半導体装置の試験装置の一部を開放し斜め方向から俯瞰する図である。図において、断面がコの字形の装置本体41底面の中央部に、試験対象の半導体装置42が、その取付け部のねじ穴を利用して取り付けられる。半導体装置42の不図示の信号入力端部側及び信号出力端部側には、それぞれ耐熱性の絶縁材料で構成される基板43が設置され、その上に導体線路44が設けられている。入力用同軸コネクタ45の不図示の中心導体は、導体線路44の一方の端部上で半田付けされ、半導体装置42の入力端子は導体の他方の端部上で押え装置48の先端部48aで押えられることにより電気的接続を構成し、高周波信号の入力が可能になっている。また半導体装置42の不図示の出力端子側も同様の構成により押え装置49とその先端部49aにより電気的接続を構成し高周波信号の出力が可能になっている。半導体装置42に高周波信号が入力されると半導体装置の消費熱量に基く自己発熱より装置本体41が高温状態となる。この状態で出力用同軸コネクタ47に接続される不図示の同軸ケーブルを経由して高周波信号の出力が得られ、半導体装置42における高周波信号の変化状態を検知することにより試験対象半導体装置の信頼性を検証することが可能である。   As an example of this test apparatus, there is a test apparatus (hereinafter referred to as a first prior art) as shown in FIG. That is, FIG. 5 is a view in which a part of a test apparatus for a semiconductor device that becomes a high temperature state due to self-heating is opened and viewed from an oblique direction. In the drawing, a semiconductor device 42 to be tested is attached to a central portion of the bottom surface of the device body 41 having a U-shaped cross section using a screw hole of the attachment portion. A substrate 43 made of a heat-resistant insulating material is provided on a signal input end side and a signal output end side (not shown) of the semiconductor device 42, and a conductor line 44 is provided thereon. The center conductor (not shown) of the input coaxial connector 45 is soldered on one end of the conductor line 44, and the input terminal of the semiconductor device 42 is connected to the other end of the conductor at the tip 48a of the pressing device 48. By being pressed, an electrical connection is formed and a high-frequency signal can be input. Further, the output terminal side (not shown) of the semiconductor device 42 is also electrically connected by the presser device 49 and its tip 49a with the same configuration, and can output a high frequency signal. When a high-frequency signal is input to the semiconductor device 42, the device main body 41 enters a high temperature state due to self-heating based on the heat consumption of the semiconductor device. In this state, a high-frequency signal output is obtained via a coaxial cable (not shown) connected to the output coaxial connector 47, and the reliability of the semiconductor device under test is detected by detecting the change state of the high-frequency signal in the semiconductor device 42. Can be verified.

また試験装置の他の例として、外部加熱装置によりIC(半導体集積回路)を高温状態に保持し試験する装置がある。即ち、装置本体に第1の支持棒(ソケット支持体)と、第1の支持棒の延長部に第2の支持棒(銅管コネクタ間支柱)が設けられ、第1の支持棒には銅管保持板(複数)が、第2の支持棒にはコネクタ取付板(単数)が設けられる。そして銅管保持板に保持される銅管中に、コネクタ支持板に取付けられた同軸ケーブル用コネクタの中心導体部を通すことよってICを取付けるICソケットと同軸ケーブル間とで電気的接続を行う発明(以下、第2従来技術という)が公知である(特許文献1参照)。
特開2003―240818号公報
As another example of the test apparatus, there is an apparatus for holding and testing an IC (semiconductor integrated circuit) at a high temperature by an external heating device. That is, the device body is provided with a first support rod (socket support), the first support rod is provided with a second support rod (copper tube connector post), and the first support rod is provided with copper. The tube holding plate (s) are provided, and the second support rod is provided with a connector mounting plate (s). An invention in which an electrical connection is made between an IC socket for mounting an IC and a coaxial cable by passing a central conductor portion of a connector for a coaxial cable attached to a connector support plate in a copper tube held by the copper tube holding plate. (Hereinafter referred to as second prior art) is known (see Patent Document 1).
Japanese Patent Laid-Open No. 2003-240818

前記第1の従来技術の場合、入力用同軸コネクタ45と出力用同軸コネクタ47の中心導体は半田付けにより装置本体41の基板43上の導体44に固着される。このため半導体装置42の自己発熱によって装置本体41が高温になると、この半田が溶融する、また入力用同軸コネクタ45と出力用同軸コネクタ47も高温の影響を直に受けることになる。近年、発熱温度が従来の250℃から350℃に達する半導体装置が開発されている。このため、半田の溶融は言うに及ばず同軸コネクタに使用されている絶縁材料の破損や同軸コネクタに接続される同軸ケーブルの被覆材の溶融等が生じるなど、半導体試験装置の入出力部材に損傷が生じ、正常な状態で安定して試験が行えない恐れが生じている。   In the case of the first prior art, the center conductors of the input coaxial connector 45 and the output coaxial connector 47 are fixed to the conductor 44 on the substrate 43 of the apparatus main body 41 by soldering. For this reason, when the device main body 41 becomes high temperature due to self-heating of the semiconductor device 42, the solder is melted, and the input coaxial connector 45 and the output coaxial connector 47 are directly affected by the high temperature. In recent years, semiconductor devices having a heat generation temperature of 250 ° C. to 350 ° C. have been developed. For this reason, damage to the input / output members of the semiconductor test equipment, such as melting of the solder, melting of the insulation material used in the coaxial connector, melting of the coating material of the coaxial cable connected to the coaxial connector, etc. As a result, there is a risk that the test cannot be performed stably in a normal state.

また前記第2の従来技術の場合、第1の支持棒(ソケット支持体)とその延長部の第2の支持棒(銅管コネクタ間支柱)は所定の長さを持っている。このためコネクタ取付板は装置本体から離れているので、そこに取り付けられる同軸ケーブル用コネクタは、直接加熱温度の影響を受ける心配はなくなる。しかしながらコネクタ取付板が装置本体から遠くなる分だけ試験装置が大きくなる。またコネクタの中心導体部からICソケットまでの接続は、銅管と銅管内部を通過する同軸ケーブルの中心導体とによって構成されるが、銅管は銅管保持版及び金属製の銅管コネクタ間支柱並びにコネクタ取付板を介して同軸ケーブルの外被に接続される。このため同軸ケーブル用コネクタとICソケットとの接続においてインピーダンスの整合が崩れ、高周波信号の伝送損失が大きくなり正確な信頼性検知ができなくなる恐れがある。   In the case of the second prior art, the first support bar (socket support) and the second support bar (the post between copper tube connectors) of the extension have a predetermined length. For this reason, since the connector mounting plate is separated from the apparatus main body, there is no fear that the coaxial cable connector attached thereto is directly affected by the heating temperature. However, the test apparatus becomes larger as the connector mounting plate becomes farther from the apparatus main body. The connection from the center conductor part of the connector to the IC socket is composed of a copper tube and a center conductor of a coaxial cable passing through the inside of the copper tube. The copper tube is between the copper tube holding plate and the metal copper tube connector. It is connected to the jacket of the coaxial cable via the support column and the connector mounting plate. For this reason, impedance matching is lost in the connection between the coaxial cable connector and the IC socket, the transmission loss of the high-frequency signal is increased, and there is a risk that accurate reliability detection cannot be performed.

本発明は、このような実状に鑑みてなされたものであり、その第1の目的は、半導体試験装置の信号入出力部材に高温による損傷が生じないようにすることであり、第2の目的は、高温状態において伝送線路と被試験半導体装置の入出力部の接続においてインピーダンス不整合が生じないようにすることである。そして第3の目的は、高温状態において安定して半導体装置に試験が行えるようにすることである。   The present invention has been made in view of such a situation, and its first object is to prevent signal input / output members of a semiconductor test apparatus from being damaged due to high temperature. This is to prevent impedance mismatch in connection between the transmission line and the input / output unit of the semiconductor device under test in a high temperature state. A third object is to enable a semiconductor device to be stably tested in a high temperature state.

請求項1の発明は、自己発熱及び又は外部加熱により高温状態となる半導体装置の試験装置において、被試験用の半導体装置を設置する試験装置本体と、試験装置本体と別体に構成され前記半導体装置に通電する伝送線路の接続部を有し、冷却手段を備えた信号入出力装置と、伝送線路と半導体装置の接続インピーダンスを整合する内径を有し、各端部がそれぞれ試験装置本体と信号入出力装置に嵌合する導電性の円筒体であって伝送線路の外部導体を形成し筒内を伝送線路の中心導体が貫通する円筒体と、を備えたことを特徴とする半導体装置の試験装置である。
請求項2の発明は、請求項1記載の半導体装置の試験装置において、前記試験装置本体は、絶縁基板に設置された導体上で前記円筒体を貫通する伝送線路の中心導体を押圧する第1の押圧手段と被試験用の半導体装置の入出力端子を押圧する第2の押圧手段を備えたことを特徴とする半導体装置の試験装置である
求項の発明は、請求項1又は2記載の半導体装置の試験装置において、前記信号入出力装置を試験装置本体に圧接する手段を備えたことを特徴とする半導体装置の試験装置である。
According to a first aspect of the present invention, there is provided a test apparatus for a semiconductor device that is brought into a high temperature state by self-heating and / or external heating, a test apparatus main body in which a semiconductor device to be tested is installed, and a semiconductor device configured separately from the test apparatus main body. have a connecting portion of the transmission line to be supplied to the apparatus, and the signal input and output apparatus having a cooling means, transmission line and has an inner diameter that matches the connection impedance of the semiconductor device, each end respectively the test apparatus main body and the signal a conductive cylindrical member which is fitted to the input-output device, a semiconductor device, characterized in that the center conductor of the transmission line formed by the cylinder of the outer conductor of the transmission line is provided with a cylindrical body that penetrates Test equipment.
According to a second aspect of the present invention, in the semiconductor device test apparatus according to the first aspect, the test apparatus body presses a central conductor of a transmission line penetrating the cylindrical body on a conductor installed on an insulating substrate. And a second pressing means for pressing the input / output terminals of the semiconductor device to be tested .
Invention Motomeko 3, apparatus for testing a semiconductor device according to claim 1 or 2 wherein, is a test apparatus for a semiconductor device characterized by comprising means for pressing the signal input and output device to the test apparatus body .

本発明によれば、高温状態において半導体試験装置の信号入出力部材に損傷が生じることはなくなる、また伝送線路と被試験半導体装置の入出力部の接続においてインピーダンス不整合が生じることはない。これらにより安定して半導体装置の試験を行うことができる。   According to the present invention, the signal input / output member of the semiconductor test apparatus is not damaged in a high temperature state, and impedance mismatch does not occur in the connection between the transmission line and the input / output unit of the semiconductor device under test. Thus, the semiconductor device can be tested stably.

以下、本発明の実施形態に係る半導体装置の試験装置について図面を参照し説明する。
図1は、本発明の実施形態に係る半導体試験装置の一部開放俯瞰図である。
図1において、半導体試験装置100は、銅合金等の金属で構成された上向きに断面コの字形の試験装置本体1と、試験対象の半導体装置に高周波信号を入力する同軸ケーブル用コネクタ2aを備えた信号入力装置2と、試験対象の半導体装置からの高周波信号を出力する同軸ケーブル用コネクタ3aを備えた信号出力装置3と、信号入力装置2の熱を移動させるためにヒートパイプ4aで信号入力装置2と接続された冷却装置4及び、信号出力装置3の熱を移動させるためにヒートパイプ5aで信号出力装置3と接続された不図示の冷却装置により構成される。
A semiconductor device test apparatus according to an embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a partially open overhead view of a semiconductor test apparatus according to an embodiment of the present invention.
In FIG. 1, a semiconductor test apparatus 100 includes a test apparatus body 1 having an upward U-shaped cross section made of a metal such as a copper alloy, and a coaxial cable connector 2a for inputting a high-frequency signal to the semiconductor device to be tested. The signal input device 2, the signal output device 3 including the coaxial cable connector 3 a that outputs a high-frequency signal from the semiconductor device to be tested, and the signal input by the heat pipe 4 a to move the heat of the signal input device 2. A cooling device 4 connected to the device 2 and a cooling device (not shown) connected to the signal output device 3 by a heat pipe 5a to move the heat of the signal output device 3 are configured.

なお、試験装置本体1は必要に応じ試験対象の半導体装置を加熱する不図示の加熱装置を有する。また信号入力装置2及び信号出力装置3はそれぞれ連結管(パイプ)で試験装置本体1と結合されるが、このパイプについては後述する。   The test apparatus main body 1 has a heating device (not shown) for heating the semiconductor device to be tested as necessary. The signal input device 2 and the signal output device 3 are connected to the test apparatus main body 1 by connecting pipes (pipes), which will be described later.

上向きに断面コの字形の試験装置本体1のそれぞれの立上り壁上に両壁を跨ぐように四角枠状の押しピン保持部材6が設置されている。押しピン保持部材6の上枠から下枠を貫通するように押しピン7が設けられる。押しピン7は自分が常に下方に移動するように付勢されるスプリング8を備える。また押しピン7には上下の移動方向と直角の向きにピン状の係合部材7aが植設されていて、押しピン保持部材6の上枠の縦方向に設けられた溝6a内に沿って押しピン7の上下方向の移動を可能にしている。   A square frame-shaped push pin holding member 6 is installed on each rising wall of the test apparatus main body 1 having a U-shaped cross section upward so as to straddle both walls. A push pin 7 is provided so as to penetrate the lower frame from the upper frame of the push pin holding member 6. The push pin 7 includes a spring 8 that is urged so that it always moves downward. The push pin 7 is provided with a pin-like engagement member 7a in a direction perpendicular to the vertical movement direction, and extends along a groove 6a provided in the vertical direction of the upper frame of the push pin holding member 6. The push pin 7 can be moved in the vertical direction.

押しピン7と同じ構造の押しピン9,11,12が押しピン保持部材6に設けられる。   Push pins 9, 11, 12 having the same structure as the push pin 7 are provided on the push pin holding member 6.

導体線路15、絶縁基板16については、図2及び図3で詳述する。   The conductor line 15 and the insulating substrate 16 will be described in detail with reference to FIGS.

図2は、図1の半導体試験装置のA−A断面のうち信号入力装置側部分を示す図である。信号出力装置側部分は信号入力装置側部分と全く同様の構成を有するため図示を省略している。   FIG. 2 is a diagram showing a signal input device side portion in the AA cross section of the semiconductor test apparatus of FIG. Since the signal output device side portion has the same configuration as the signal input device side portion, the illustration is omitted.

図2において、ユーザーは、押しピン7の頭部をスプリング8の下方への付勢力に抗して持ち上げ、90度回転させた状態で係合部材7aを押しピン保持部材6の上面に係合させることにより、押しピン7を持ち上げた状態に留め置くことができる。押しピン9もスプリング10の伸張力に抗して上方に移動させられ、係合部材9aが押しピン保持部材6と係合することにより、上方に移動した状態に留め置くことができる。このため押しピン7,9の先端部は導体線路16との間で隙間ができている。   In FIG. 2, the user lifts the head of the push pin 7 against the downward biasing force of the spring 8 and engages the engagement member 7 a with the upper surface of the push pin holding member 6 in a state where the push member 7 is rotated 90 degrees. By doing so, the push pin 7 can be kept in the lifted state. The push pin 9 is also moved upward against the extension force of the spring 10, and the engaging member 9 a is engaged with the push pin holding member 6, so that the push pin 9 can be kept in the moved state. For this reason, there is a gap between the end portions of the push pins 7 and 9 and the conductor line 16.

試験装置本体1と信号入力装置2は、ステンレス製のパイプ18の各端部が試験装置本体1と信号入力装置2に嵌合されることにより連結されている。このときパイプ18は、同軸ケーブル用コネクタ2aの中心導体2bの直径を基に、マイクロストリップ線路とのインピーダンスが整合されるように周知の計算方式に基づいて内径を決める。同軸ケーブル用コネクタ2aの中心導体2bは、パイプ18を貫通して導体線路16上に延びている。   The test apparatus main body 1 and the signal input apparatus 2 are connected by fitting each end of a stainless steel pipe 18 to the test apparatus main body 1 and the signal input apparatus 2. At this time, the inner diameter of the pipe 18 is determined based on a known calculation method so that the impedance with the microstrip line is matched based on the diameter of the central conductor 2b of the coaxial cable connector 2a. The central conductor 2 b of the coaxial cable connector 2 a extends through the pipe 18 and onto the conductor line 16.

図3は、図2のB−B断面における上面図である。
図3において、試験装置本体1底部の略中央部に、試験対象である例えば電界効果トランジスタ(FET)等の半導体装置14がセットされる。試験装置本体1底部の、試験装置本体1の信号入力装置2側の立ち上り壁と半導体装置14との間は、導体線路16を備えた耐熱樹脂製の絶縁基板15が設置される。これらにより、つまり接地導体として機能する試験装置本体1と絶縁基板15と導体線路16とによりマイクロストリップ線路が形成される。
FIG. 3 is a top view of the BB cross section of FIG.
In FIG. 3, a semiconductor device 14 such as a field effect transistor (FET) to be tested is set at a substantially central portion of the bottom of the test apparatus main body 1. An insulating substrate 15 made of a heat-resistant resin having a conductor line 16 is installed between the rising wall on the signal input device 2 side of the test device main body 1 and the semiconductor device 14 at the bottom of the test device main body 1. As a result, a microstrip line is formed by the test apparatus main body 1, which functions as a ground conductor, the insulating substrate 15, and the conductor line 16.

図3では記載を省略しているが試験装置本体1の信号出力装置3側の立ち上り壁と半導体装置6との間にも同様にマイクロストリップ線路が形成される。そして同軸ケーブル用コネクタ3aの中心導体と半導体装置14の出力端子もこのマイクロストリップ線上で同じ構成を有する。   Although not shown in FIG. 3, a microstrip line is similarly formed between the rising wall on the signal output device 3 side of the test apparatus body 1 and the semiconductor device 6. The central conductor of the coaxial cable connector 3a and the output terminal of the semiconductor device 14 have the same configuration on the microstrip line.

信号入力装置2にはヒートパイプ4aが埋設され、その他端は複数の放熱フィンを有する冷却装置4に取り付けられている。同様に信号出力装置3にはヒートパイプ5a(図1)が埋設され、不図示の他端は冷却装置4と同形式の不図示の冷却装置に取り付けられる。   A heat pipe 4a is embedded in the signal input device 2, and the other end is attached to the cooling device 4 having a plurality of heat radiation fins. Similarly, a heat pipe 5 a (FIG. 1) is embedded in the signal output device 3, and the other end (not shown) is attached to a cooling device (not shown) of the same type as the cooling device 4.

更に信号入力装置2は、ねじ21及びねじ22によって試験装置本体1側に圧接する。目視では確認不可能であるが加工上、どうしてもパイプ18の表面、信号入力装置2のパイプ18との接触面、また試験装置本体1のパイプ18との接触面は凹凸状になり、このため接触が完全な面同士の接触とはならなくなるのでインピーダンス不整合を招来する。ねじ21及びねじ22によって信号入力装置2を試験装置本体1側に圧接、接触を強固にすることによりインピーダンス不整合をなくすことができる。   Further, the signal input device 2 is pressed against the test apparatus main body 1 side by screws 21 and 22. Although it cannot be confirmed by visual inspection, the surface of the pipe 18, the contact surface with the pipe 18 of the signal input device 2, and the contact surface with the pipe 18 of the test apparatus main body 1 are rugged. Will not be a perfect face-to-face contact, leading to impedance mismatch. Impedance mismatch can be eliminated by press-contacting the signal input device 2 with the screw 21 and the screw 22 to the test device main body 1 side and strengthening the contact.

いま、試験のための前準備として半導体装置14を試験装置本体1のセット位置に配置すると、その入力端子14bは導体線路16上に延びる。そこでユーザーはそれぞれ押しピン7,9の係合部材7a,9aの押しピン保持部材6との係合を外し、係合部材7a,9aを溝6a,6aに沿わせると、押しピン7,9はスプリング8,10の伸張力により下降し中心導体2bと導体線路16、入力端子14bと導体線路16を圧接し電気的接続を構成する。なお、押しピン7は常時、圧接状態にしておいてもよい。   Now, when the semiconductor device 14 is arranged at the set position of the test apparatus main body 1 as a preparation for the test, the input terminal 14 b extends on the conductor line 16. Therefore, when the user disengages the engaging members 7a, 9a of the push pins 7, 9 from the push pin holding member 6 and moves the engaging members 7a, 9a along the grooves 6a, 6a, the push pins 7, 9 are engaged. Is lowered by the extension force of the springs 8 and 10 to press-contact the central conductor 2b and the conductor line 16 and the input terminal 14b and the conductor line 16 to form an electrical connection. Note that the push pin 7 may always be in a pressure contact state.

図2及び図3では記載が省略されている押しピン11,12によっても同様の電気的接続が構成される。   The same electrical connection is configured by the push pins 11 and 12 which are not shown in FIGS.

図4は、半導体試験回路の概略を示す図である。
図4において、試験を行う場合、半導体試験装置100に装着され電気的接続が構成された試験対象の半導体装置(DUT)14には、高周波発信器31から減衰器(ATT)32を介して高周波信号が入力され、負荷装置33に出力される。このとき半導体試験装置の試験装置本体1は半導体装置の自己発熱及び又は加熱装置による加熱により約250℃乃至350℃の高温状態となり、この状態で入力信号p1と出力信号p2を比較することにより半導体装置(DUT)14の信頼性を検知することができる。
FIG. 4 is a diagram showing an outline of the semiconductor test circuit.
In FIG. 4, when a test is performed, a test target semiconductor device (DUT) 14 that is mounted on the semiconductor test apparatus 100 and is electrically connected to the test target semiconductor device (DUT) 14 from a high frequency transmitter 31 through an attenuator (ATT) 32. A signal is input and output to the load device 33. At this time, the test apparatus body 1 of the semiconductor test apparatus becomes a high temperature state of about 250 ° C. to 350 ° C. due to self-heating of the semiconductor device and / or heating by the heating device, and in this state, the input signal p1 and the output signal p2 are compared to compare the semiconductor. The reliability of the device (DUT) 14 can be detected.

以上述べたように、信号入力装置2と信号出力装置3は、ステンレス製パイプ18で試験装置本体1と別体に構成され、熱的絶縁が保持されているので、試験装置本体1の高温度が信号入力装置2と信号出力装置3に直接伝わらない。このため信号入力装置2及び信号出力装置3を冷却しつつ試験装置本体1を加熱し試験温度を確保することができる。従って同軸ケーブル用コネクタ2a,3aが熱による損傷をうけることがない。また電気的接続のために半田を使用しないので、半田の溶融を心配する必要がない。しかも連結パイプ18は同軸ケーブル用コネクタ2a,3aと導体線路16とのインピーダンスを完全に整合する構成になっているので、安定して半導体装置の信頼性を検知することができると共に高周波信号の伝送損失を抑えることができるので、高い精度で半導体装置の信頼性を検知することができる。   As described above, the signal input device 2 and the signal output device 3 are configured separately from the test apparatus main body 1 by the stainless steel pipe 18, and the thermal insulation is maintained, so that the high temperature of the test apparatus main body 1 is maintained. Is not transmitted directly to the signal input device 2 and the signal output device 3. Therefore, the test apparatus body 1 can be heated while the signal input device 2 and the signal output device 3 are cooled to ensure the test temperature. Therefore, the coaxial cable connectors 2a and 3a are not damaged by heat. Moreover, since solder is not used for electrical connection, there is no need to worry about melting of the solder. In addition, since the connecting pipe 18 is configured to perfectly match the impedances of the coaxial cable connectors 2a and 3a and the conductor line 16, it is possible to stably detect the reliability of the semiconductor device and transmit high-frequency signals. Since loss can be suppressed, the reliability of the semiconductor device can be detected with high accuracy.

本発明の実施形態に係る半導体装置の試験装置の一部開放俯瞰図である。1 is a partially open overhead view of a semiconductor device testing apparatus according to an embodiment of the present invention; 図1の半導体装置の試験装置のA−A断面のうち信号入力装置側部分を示す図である。It is a figure which shows the signal input device side part among the AA cross sections of the testing apparatus of the semiconductor device of FIG. 図2のB−B断面の上面図である。FIG. 3 is a top view of a BB cross section in FIG. 2. 半導体試験回路の概略を示す図である。It is a figure which shows the outline of a semiconductor test circuit. 従来の半導体装置の試験装置の一部開放俯瞰図である。It is a partial open bird's-eye view of the conventional semiconductor device testing apparatus.

符号の説明Explanation of symbols

1・・試験装置本体、2・・信号入力装置、2a・・同軸ケーブル用コネクタ、3・・信号出力装置、3a・・同軸ケーブル用コネクタ、4・・冷却装置、4a・・ヒートパイプ、6・・押しピン保持部材、6a・・溝、7・・押しピン、7a・・係合部材、8・・スプリング、14・・試験対象半導体装置、15・・絶縁基板、16・・導体線路。 1 .... Test equipment body 2 .... Signal input device 2a ... Coaxial cable connector 3 .... Signal output device 3a ... Coaxial cable connector 4 .... Cooling device 4a ... Heat pipe 6 ..Push pin holding member, 6a ..groove, 7 ..Push pin, 7a ..engagement member, 8 ..spring, 14 ..Semiconductor device under test, 15 ..insulating substrate, 16 ..conductor line.

Claims (3)

自己発熱及び又は外部加熱により高温状態となる半導体装置の試験装置において、
被試験用の半導体装置を設置する試験装置本体と、
試験装置本体と別体に構成され前記半導体装置に通電する伝送線路の接続部を有し、冷却手段を備えた信号入出力装置と、
伝送線路と半導体装置の接続インピーダンスを整合する内径を有し、各端部がそれぞれ試験装置本体と信号入出力装置に嵌合する導電性の円筒体であって伝送線路の外部導体を形成し筒内を伝送線路の中心導体が貫通する円筒体と、
を備えたことを特徴とする半導体装置の試験装置。
In a semiconductor device testing device that becomes hot due to self-heating and / or external heating,
A test apparatus main body for installing a semiconductor device to be tested;
Configured to test apparatus main body and another body have a connecting portion of the transmission line to be supplied to the semiconductor device, a signal input and output device provided with cooling means,
It has an inner diameter that matches the connection impedance of the transmission line and the semiconductor device, a conductive cylindrical body each end is fitted to the testing apparatus main body and a signal output device, respectively, to form external conductor of the transmission line A cylindrical body through which the central conductor of the transmission line passes,
An apparatus for testing a semiconductor device, comprising:
請求項1記載の半導体装置の試験装置において、
前記試験装置本体は、絶縁基板に設置された導体上で前記円筒体を貫通する伝送線路の中心導体を押圧する第1の押圧手段と被試験用の半導体装置の入出力端子を押圧する第2の押圧手段を備えたことを特徴とする半導体装置の試験装置。
The semiconductor device test apparatus according to claim 1,
The test apparatus main body presses a first pressing means for pressing a central conductor of a transmission line penetrating the cylindrical body on a conductor installed on an insulating substrate, and a second for pressing an input / output terminal of a semiconductor device to be tested. An apparatus for testing a semiconductor device, comprising: a pressing means.
請求項1又は2記載の半導体装置の試験装置において、前記信号入出力装置を試験装置本体に圧接する手段を備えたことを特徴とする半導体装置の試験装置。
3. The semiconductor device testing apparatus according to claim 1 , further comprising means for press-contacting the signal input / output device to a test device main body.
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