JP5033438B2 - Metal mask manufacturing method and metal mask manufactured thereby - Google Patents

Description

The present invention relates to a method for manufacturing a metal mask having a taper on an opening wall surface of a printed pattern, for example, and a metal mask manufactured thereby .

Conventionally, a resist is formed in a printed pattern shape on a base material, a metal layer is formed on the base material except for a portion where the resist is formed, and the mask is formed by removing the resist and the base material from the metal layer. There is technology to manufacture. Here, when a resist is formed on a substrate in a printed pattern shape, the resist applied on the entire substrate is exposed to a printed pattern shape and developed. In order to expose the resist to the printed pattern shape, a method of exposing the resist to the printed pattern shape using a pattern film or a method of directly exposing the resist to the printed pattern shape by a laser is used. In addition, in a method of directly exposing a resist in a printed pattern shape with a laser, there is a technique in which the resist is tapered and exposed by reducing the exposure amount. Furthermore, there is a technique in which the resist is tapered and exposed by increasing or decreasing the development time.
JP 2006-93269 A

In the conventional mask manufacturing method, the angle of the taper applied to the opening wall surface of the mask printing pattern cannot be controlled.
In the conventional technique of exposing a resist by tapering by reducing the exposure amount, a taper is formed on the opening wall surface of the mask printing pattern, but the formed shape varies and is unstable. Further, when the exposure amount is reduced, the taper generally increases in many cases, but the plating is also peeled off on the contact surface with the substrate. That is, the substrate side is less exposed than the resist surface, and the resist on the substrate side is not hardened. As a result, the plating enters between the resist and the substrate. In particular, such a phenomenon occurs in a resist having high peelability and high resolution. Therefore, this technique cannot be used to manufacture a mask having a high-definition print pattern having a tapered opening wall surface.
Further, in the conventional technique of tapering the opening wall surface by increasing or decreasing the development time, resist peeling or the like occurs and the mask cannot be manufactured stably. Moreover, many vertical stripes appear on the opening wall surface, and the opening wall surface becomes rough.
An object of the present invention is to form a taper on an opening wall surface of a printed pattern of a mask without causing, for example, plating boring or the like. Another object is to control the angle of the taper to be formed. Furthermore, when the opening wall surface is tapered, the object is to reduce the roughness of the opening wall surface.

The method for producing a metal mask according to the present invention includes laminating a resist having a thickness of 10 to 300 μm on a base material,
By using a direct drawing type drawing machine that condenses the light of an ultra-high pressure mercury lamp, the focus of the condensed light is shifted from the surface of the resist, and the resist is irradiated directly with the condensed light. with a tapered exposed to form a resist pattern having a thickness of 10~300μm corresponding to the opening portion of the developed and printed patterns,
Except for the portion where the resist pattern is formed, a metal layer having a plate thickness of 10 to 300 μm is formed on the substrate by plating,
Removing the resist pattern,
A metal mask having a plate thickness of 10 to 300 [mu] m is obtained by peeling the substrate from the metal layer.

The method for producing the metal mask includes, for example, shifting the focus position of the condensed light from the resist surface by 20 to 100 μm to the base material side or by 20 to 80 μm to the resist upper surface side, It is characterized by directly irradiating the condensed light to the above.

Further, the metal mask manufacturing method shifts the focal point of the collected light , for example, to the base material side instead of the resist upper surface side when a large angle taper is applied to the opening wall surface. <Br / > It is characterized by that.

Further, the metal mask according to the present invention is manufactured by, for example, the above-described method for manufacturing a metal mask, and the metal mask forms a taper in which an opening corresponding to a print pattern extends from a squeegee surface to a print surface, and printing. The roughness Ra of the wall surface of the opening corresponding to the pattern is 0.01 to 0.1 [mu] m .

According to the method for manufacturing a metal mask according to the present invention, a resist of 10 to 300 μm in thickness is applied to a base material, and a direct drawing type drawing machine that collects light of an ultrahigh pressure mercury lamp is used. the focus was shifted from the surface of the resist by irradiating the condensing light into the resist directly resist with a tapered exposed, thickness corresponding to the opening portion of the developed and printed pattern of 10 A resist pattern having a thickness of ˜300 μm is formed, a metal layer having a thickness of 10 to 300 μm is formed on the base material by plating except for a portion where the resist pattern is formed, and the resist pattern is removed from the metal layer. by peeling off the substrate, by obtaining a metal mask having a thickness of 10 to 300 [mu] m, it is possible to form a high precision taper of the opening wall surface of the printed pattern of the metal mask . Further, the taper angle to be formed can be controlled without generating plating or the like.
In addition, according to the metal mask of the present invention, the roughness of the wall surface of the opening corresponding to the printing pattern is small, and the opening has a taper that spreads from the squeegee surface toward the printing surface, so that ink or the like can be easily removed. Further, since the plate thickness is thin, thin printing is possible.

Embodiment 1 FIG.
First, based on FIG. 1, FIG. 2, the shape of the metal mask 1 which concerns on Embodiment 1 is demonstrated. FIG. 1 is a view of the metal mask 1 as viewed from the squeegee surface. The squeegee surface is a surface on which the squeegee slides during printing. On the other hand, the surface behind the squeegee surface is called a printing surface. That is, the printing surface is a surface that becomes the workpiece side during printing. 2 is a cross-sectional view taken along line AA ′ of FIG.
In FIG. 1, the openings 2 and 3 on the squeegee surface side correspond to the openings 4 and 5 on the printing surface side, and are continuous openings. As shown in FIG. 1, the openings 4 and 5 on the printing surface side are larger than the openings 2 and 3 on the squeegee surface side. As shown in FIG. 2, the wall surface of the opening corresponding to each printing pattern forms a taper that widens from the squeegee surface toward the printing surface.

Next, based on FIGS. 3A and 3B, a process that is a point in the method of manufacturing the metal mask 1 according to the first embodiment will be described. FIG. 3 is a diagram illustrating a process of exposing the resist 11 formed on the base material 10 to a printed pattern shape.
Conventionally, the laser beam is irradiated while focusing on the surface 12 of the resist 11. The portion of the resist 11 irradiated with the laser is exposed. Here, since the resist 11 is exposed with a laser in a direction perpendicular to the substrate 10, the exposed resist 11 is not tapered. Here, the shape of the opening of the manufactured metal mask 1 is the shape of the exposed resist 11. Therefore, if the resist 11 is not exposed with a taper, the manufactured metal mask 1 does not have a taper.
In the method of manufacturing the metal mask 1 according to the first embodiment, irradiation is performed by shifting the focus position of the collected light from the surface 12 of the resist 11. By shifting the focus position of the condensed light, it is possible to expose the resist 11 with a taper. Further, the taper angle applied to the resist 11 can be controlled by shifting the focus position of the condensed light. That is, it is possible to control the angle of the taper applied to the opening of the manufactured metal mask 1. As shown in FIG. 4, an opening 21 having no taper in the cross section, an opening 22 having a taper in the cross section at a small angle (θ), or a taper in the cross section at a large angle (θ ′). It is also possible to make an attached opening 23. A method for controlling the taper angle applied to the resist 11 will be described later.
Further, the condensed light used here is, for example, the light collected from an ultrahigh pressure mercury lamp. Further, when exposing the resist in the shape of a large opening, the focused light is moved for exposure. In this case, since the collected light always exposes the resist with a taper of a predetermined angle, the wall surface of the large opening has a taper of a predetermined angle.

Next, all steps of the method for manufacturing the metal mask 1 according to the first embodiment will be described with reference to FIGS.
First, as shown in FIG. 5, a resist 11 is applied (laminated) on the substrate 10. Next, as described above, the focus of the condensed light is shifted from the surface of the resist 11, and the light condensed on the resist 11 is directly scanned and irradiated for exposure. Here, how to shift the focal point of the condensed light from the surface of the resist 11 is determined by the taper angle of the opening side wall of the metal mask to be manufactured. And as shown in FIG. 6, it develops and forms the resist pattern 13 corresponding to the opening part of a printing pattern.
Next, as shown in FIG. 7, a metal layer 14 is formed on the base material 10 by plating except for the portion where the resist pattern 13 is formed. Then, as shown in FIG. 8, the resist pattern 13 is removed, and the base material 10 is peeled from the metal layer 14.
As a result, the remaining metal layer 14 becomes the metal mask 1.

Next, a change in the angle of the taper attached to the resist 11 when the focus position of the condensed light is irradiated with being shifted from the surface 12 of the resist 11 will be described with reference to FIGS. 9, FIG. 11, FIG. 13 and FIG. 15 show the opening dimension L (μm) of the printed surface of the metal mask 1 generated when the focal depth Z (position) (μm) of the collected light is changed. ) And the opening dimension M (μm) of the squeegee surface. In particular, FIG. 9 shows values when an aperture having a diameter of 200 μm is opened with the amount of collected light being 200 mj. FIG. 11 shows values when an aperture having a diameter of 200 μm is opened with the amount of collected light being 150 mj. FIG. 13 shows values when an aperture having a diameter of 100 μm is opened with the amount of collected light being 200 mj. FIG. 15 shows a value when an aperture having a diameter of 100 μm is opened with the amount of collected light being 150 mj. FIG. 10 is a graph showing the opening size L (μm) of the printing surface and the opening size M (μm) of the squeegee surface with respect to the focal depth Z (position) of the condensed light shown in FIG. 12 is the graph of FIG. 11, FIG. 14 is the graph of FIG. 13, and FIG. 16 is the graph of FIG. FIG. 17 shows an opening dimension L (μm) of the printing surface and an opening dimension M (μm) of the squeegee surface with respect to the depth Z (position) of the focal point of the condensed light shown in FIGS. 9, 11, 13 and 15. ) And a graph. 18 is a diagram showing the position of each value shown in FIG. 9, FIG. 11, FIG. 13, and FIG. Here, as shown in FIG. 3, the focal depth Z of the collected light is a value of + (plus) in the direction of the base material 10 (base material side) when the surface 12 of the resist 11 is 0. And takes a value of minus (minus) in the direction opposite to the substrate 10 (resist upper surface side). Further, the opening dimension L (μm) of the printing surface and the opening dimension M (μm) of the squeegee surface shown in FIGS. 9, 11, 13, and 15 indicate how much larger than the dimension of the opening. That is, for example, in FIG. 9, when the depth of focus Z is 100 μm, the aperture size M of the squeegee surface is 208 μm, which is an aperture diameter of 200 μm plus 8 μm.
In taking the values shown in FIG. 9 to FIG. 17, LI-8500 HM-3056 manufactured by Dainippon Screen Mfg. Co., Ltd. was used as a direct drawing type drawing machine that irradiates the condensed light. As shown in FIG. 18 , two resists 11 having a thickness of 29 μm were used. That is, the thickness W of the resist 11 is 58 μm. Here, the condensed light is moved to perform exposure to a predetermined opening size.
As shown in FIGS. 9 to 17, the squeegee surface opening dimension (opening) increases as the focal point of the collected light is shifted from the surface 12 of the resist 11 in the + (plus) direction or the − (minus) direction. The opening size (opening area) of the printing surface is larger than the area). That is, the ratio of the opening area of the printing surface to the opening area of the squeegee surface (printing is increased as the focal position of the condensed light is shifted in the + (plus) direction or the − (minus) direction from the surface 12 of the resist 11. The opening area of the surface / the opening area of the squeegee surface) increases. That is, as the focal position of the condensed light is shifted in the + (plus) direction or the − (minus) direction from the surface 12 of the resist 11, the opening wall surface can be tapered at a larger angle.
In FIGS. 9, 11, 13, and 15, at levels 1 to 3, the difference N (LM) is larger than that when the depth of focus is 0 μm, and therefore the opening wall surface is more tapered than when the depth of focus is 0 μm. In addition, there is an effect that the ink can be easily removed. Furthermore, at levels 2 to 3, the difference N (LM) is 5 μm or more, and there is an effect that the ink can be more easily removed. In particular, at level 3, the difference N (LM) is 10 μm or more, and there is an effect that the ink can be easily removed. Further, by setting the depth of focus Z to level 3 or more, it is possible to taper the opening wall surface with a larger angle.
Here, in FIG. 9, FIG. 11, FIG. 13 and FIG. 15, the level and the opening dimension L (μm) of the printing surface and the opening dimension M (μm) of the squeegee surface are written in italics. The shape of the manufactured metal mask is not good. This occurs when the focus of the collected light is greatly shifted in the-(minus) direction (resist upper surface side). This is because when the focal point of the condensed light is largely shifted to the resist upper surface side, the light reaching the resist becomes weak and exposure cannot be performed firmly. That is, when the focal point of the collected light is greatly shifted and a taber having a larger angle is attached to the opening wall surface, it is desirable to shift the focal point to the base material side instead of the resist upper surface side.

According to the method of manufacturing the metal mask 1 according to the first embodiment, it is possible to form a taper of an arbitrary angle that spreads from the squeegee surface toward the printing surface on the opening wall surface corresponding to each printing pattern. In principle, the taper angle can be controlled with any resist. In particular, the taper angle can be controlled even with a resist having high peelability and high resolution.
Further, since the print pattern is directly drawn on the resist 11 by the light condensed from the light of the ultrahigh pressure mercury lamp, the opening wall surface roughness is reduced. Specifically, the roughness Ra of the wall surface of the opening corresponding to the print pattern can be set to 0.01 to 0.1 μm. In particular, the roughness Ra of the wall surface of the opening corresponding to the printing pattern can be set to 0.01 to 0.03 μm. In particular, the roughness Ra of the wall surface of the opening corresponding to the printing pattern can be about 0.01. Further, this wall roughness can be realized while the opening wall surface is tapered.
Further, since the print pattern is directly drawn on the resist 11 by the light condensed from the light of the ultra-high pressure mercury lamp, an opening corresponding to the print pattern can be made with high accuracy in a metal mask having a plate thickness of 10 to 300 μm. In particular, an opening corresponding to the print pattern can be made with high accuracy in a mask having a plate thickness of 10 to 100 μm or less. In particular, an opening corresponding to a print pattern can be made with high accuracy in a metal mask having a plate thickness of about 10 μm. Further, an opening corresponding to a printing pattern in which the opening wall surface is tapered can be formed in the thickness of the plate.

According to the metal mask according to the first embodiment, since the opening portion has a taper, the ability to remove ink, solder, and the like is improved. In particular, by attaching a taper suitable for the plate thickness, shape dimension, etc., the solder removability is improved. Furthermore, since the surface roughness of the opening wall surface is small, the solder removability is improved.
Moreover, since it is possible to make a printing pattern with a thin plate thickness, the printing thickness can be reduced.

The figure seen from the squeegee surface of the metal mask 1. FIG. FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG. 1. The figure which shows the process which exposes the resist 11 formed on the base material 10 to a printing pattern shape. FIG. 4 is a diagram showing a taper of a metal mask manufactured by the manufacturing method according to the first embodiment. The figure which shows the state which laminated the resist 11 on the base material 10. FIG. The figure which shows the state in which the resist pattern 13 corresponding to the opening part of a printing pattern was formed. The figure which shows the state which formed the metal layer 14 on the base material 10 by plating except the part in which the resist pattern 13 was formed. The figure which shows the manufactured metal mask 1. FIG. The aperture size of the printed surface of the metal mask 1 generated when the depth of focus (μm) of the focused light when the aperture with a diameter of 200 μm is opened is changed with the light amount of the collected light being 200 mj. The figure which shows (micrometer) and the opening dimension (micrometer) of a squeegee surface. The graph which showed the opening dimension (micrometer) of the printing surface with respect to the depth (position) of the focus of the condensed light shown in FIG. 9, and the opening dimension (micrometer) of the squeegee surface. The aperture size of the printed surface of the metal mask 1 generated when the depth of focus (μm) of the focused light when the aperture having a diameter of 200 μm is opened and the amount of the collected light is 150 mj is changed. The figure which shows (micrometer) and the opening dimension (micrometer) of a squeegee surface. The graph which showed the opening dimension (micrometer) of the printing surface with respect to the depth (position) of the focus of the condensed light shown in FIG. 11, and the opening dimension (micrometer) of the squeegee surface. The aperture size of the printed surface of the metal mask 1 generated when the depth of focus (μm) of the focused light when the aperture with a diameter of 100 μm is opened and the amount of the collected light is 200 mj is changed. The figure which shows (micrometer) and the opening dimension (micrometer) of a squeegee surface. The graph which showed the opening dimension (micrometer) of the printing surface with respect to the depth (position) of the focus of the condensed light shown in FIG. 13, and the opening dimension (micrometer) of the squeegee surface. The aperture size of the printed surface of the metal mask 1 generated when the depth of focus (μm) of the focused light when the aperture with a diameter of 100 μm is opened and the amount of the collected light is 150 mj is changed. The figure which shows (micrometer) and the opening dimension (micrometer) of a squeegee surface. The graph which showed the opening dimension (micrometer) of the printing surface with respect to the depth (position) of the focus of the condensed light shown in FIG. 15, and the opening dimension (micrometer) of the squeegee surface. The graph which showed the opening dimension (micrometer) of the printing surface with respect to the depth (position) of the focus of the condensed light shown in FIG.9, FIG.11, FIG.13, FIG.15 and the opening dimension (micrometer) of the squeegee surface. It is a figure which shows the position of each value shown in FIG.9, FIG.11, FIG.13 and FIG.

1 metal mask, 2, 3 opening on the squeegee surface side, 4, 5 opening on the printing surface side, 10 base material, 11 resist, 12 surface of the resist 11, 13 resist pattern, 14 metal layer, 21, 22, 23 opening.

Claims (4)

Laminate a 10-300 μm thick resist on the substrate,
By using a direct drawing type drawing machine that condenses the light of an ultra-high pressure mercury lamp, the focus of the condensed light is shifted from the surface of the resist, and the resist is irradiated directly with the condensed light. with a tapered exposed to form a resist pattern having a thickness of 10~300μm corresponding to the opening portion of the developed and printed patterns,
Except for the portion where the resist pattern is formed, a metal layer having a plate thickness of 10 to 300 μm is formed on the substrate by plating,
Removing the resist pattern,
A metal mask manufacturing method , wherein a metal mask having a thickness of 10 to 300 m is obtained by peeling a base material from the metal layer. Directly irradiate the condensed light to the resist by shifting the focal position of the condensed light from the surface of the resist by 20 to 100 μm toward the base material or from 20 to 80 μm toward the resist upper surface. The method of manufacturing a metal mask according to claim 1. 3. The metal according to claim 1, wherein when the focal point of the condensed light is greatly shifted and the opening wall surface is tapered at a large angle, the focal point is shifted not on the resist upper surface side but on the substrate side. Mask manufacturing method. 4. The metal mask manufactured by the mask manufacturing method according to claim 1, wherein the metal mask forms a taper in which an opening corresponding to a printing pattern extends from the squeegee surface toward the printing surface. In addition, the roughness Ra of the wall surface of the opening corresponding to the print pattern was set to 0.01 to 0.1 μm.
A metal mask characterized by this.

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