JP6107078B2 - Imprint mold manufacturing method, pattern forming method, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to an imprint method, in particular, an imprint mold capable of forming a highly accurate pattern by a nanoimprint method, a method of manufacturing such an imprint mold, a pattern forming method, and a method of manufacturing a semiconductor device.

  In recent years, a pattern forming technique based on imprint lithography using an imprint method has attracted attention as a fine pattern forming technique that replaces the photolithography technique. The imprint method is a pattern forming technique in which a fine structure is transferred at an equal magnification by using a mold member (mold) having a fine concavo-convex structure and transferring the concavo-convex structure to a molding object. For example, in an imprint method using a photocurable resin, a droplet of a photocurable resin is supplied to the surface of a substrate, and a mold having a desired concavo-convex structure and the substrate are brought close to a predetermined distance to form a concavo-convex structure. In this state, the photocurable resin is filled with light, and the photocurable resin is cured by irradiating light from the mold side, and then the mold is separated from the resin layer, thereby having a concavo-convex structure in which the concavo-convex structure of the mold is inverted. A pattern (uneven pattern) is formed on the substrate. And a pattern structure can be formed in a board | substrate by etching a board | substrate using this pattern as a mask.

  A highly accurate mold used for such an imprinting method can be manufactured by, for example, electron beam lithography. The mold is repeatedly used. However, when a defect is generated in the formed pattern structure or the uneven structure of the mold is damaged, the mold is replaced with a new mold. However, a mold manufactured by electron beam lithography as described above has a high manufacturing cost, and thus leads to an increase in cost of a product manufactured through an imprint process. Therefore, a replica mold is produced by imprint lithography using a mold produced by electron beam lithography as a master, or a replica mold is further produced by imprint lithography using this replica mold. Used for printing.

  Further, in the imprint method, in order to form a desired pattern structure, there are cases where correction of the concavo-convex structure provided in the mold and correction of the application recipe of the photocurable resin are performed. That is, a mold is produced according to a design pattern set based on the pattern structure to be formed, and the pattern structure formed by the imprint method using this mold is compared with the design pattern. If a defect exceeding tolerance is generated, the defect information is fed back to correct the design pattern and re-manufacture the mold, or to correct the mold. Feedback of unfilled defect information of the curable resin is performed to correct the supply of the photocurable resin droplets (Patent Document 1).

JP 2011-124389 A

For example, when a nanoimprint master mold having a pattern of 50 nm or less is produced by electron beam lithography, the flow of the developer is caused by the capillary force due to the fine concavo-convex structure that is gradually formed by developing the resist layer after electron beam irradiation. Is disturbed and undeveloped parts are generated, and then a defect may occur in the master mold produced through the etching process. Also, in the nanoimprint method in which a pattern of 50 nm or less is formed, photocuring is performed under the influence of capillary force acting on the photocurable resin due to the uneven structure of the mold in a state where the mold and the substrate are brought close to a predetermined distance. Direction and variation appear in the wetting and spreading of the photosensitive resin, resulting in unfilled defects due to insufficient photo-curing resin, uneven thickness of the remaining film, etc., resulting in reduced etching accuracy of the substrate and making it difficult to form a high-precision pattern There is. However, in the above-mentioned Patent Document 1, the capillary force acting on the developer and the photocurable resin is not taken into consideration, the flow of the developer is disturbed, and the wetting and spreading behavior (direction and variation) of the photocurable resin. There was a problem of frequent defects due to influence.
The present invention has been made in view of the above-described circumstances, and a method for producing an imprint mold in consideration of capillary force acting on a developer or a photocurable resin, and a highly accurate pattern formation by a nanoimprint method. It is an object of the present invention to provide an imprint mold, a pattern forming method, and a semiconductor device manufacturing method.

In order to achieve such an object, the imprint mold manufacturing method of the present invention is based on a process of applying a chemical radiation sensitive resist on a substrate to form a resist layer, and temporary design pattern data. the resist irradiating actinic radiation to the desired site of layer, forming a resist pattern by developing the resist layer with a developer, etching the substrate using the resist pattern, a plurality A step of producing a temporary master mold having a concavo-convex structure pattern formed in the region, a step of detecting a defect occurrence position of the pattern of the temporary master mold, and taking statistics of the detected defect occurrence position to obtain a defect occurrence position from the statistical results, when the difference between the frequency of occurrence of defects in the adjacent regions (pieces / cm ²⁾ exceeds a particular value, the boundary portion adjacent the region Pas Examined over emissions, the case in developing of the resist layer is pattern to produce the flow direction of the developer along the boundary region, the defect becomes a cause of defects affect the flow of the developer attracted pattern And a correction design in which the defect attraction pattern part in the temporary design pattern data is corrected so that the end of the irradiation part of the adjacent region is positioned in a zigzag manner along the boundary part. The configuration includes a step of generating pattern data and a step of producing a master mold based on the corrected design pattern data.

Further, the imprint mold manufacturing method of the present invention includes two or more pattern regions having at least a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel based on the temporary design pattern data. temporary preparing a master mold, a step of supplying the resist droplets to a predetermined position on the substrate to form a resist pattern on the substrate by imprinting using the temporary master mold, the resist comprising Etching the base material using a pattern to produce a temporary replica mold having a pattern of concavo-convex structure, detecting a defect occurrence position of the pattern of the temporary replica mold, and statistics of the detected defect occurrence position taking the statistics of the defect position, and a supply position of the resist droplets adjacent pattern Examine the pattern of the boundary region near the emission region, when a pattern that can result in the direction of flow of droplets perpendicular to the line direction, and defect inducing patterns cause the occurrence of defects affecting the wetting and spreading of the droplet Correcting design pattern data obtained by correcting the defect inducing pattern portion in the temporary design pattern data so that the end of the line is zigzag in a direction along the boundary of the adjacent pattern region The configuration includes a generating step and a step of producing a master mold based on the corrected design pattern data.

The imprint mold manufacturing method of the present invention includes a step of applying a chemical radiation sensitive resist on a master mold substrate to form a resist layer, and the resist layer based on temporary design pattern data. Forming a plurality of regions by irradiating a desired site with actinic radiation, developing a resist pattern by developing the resist layer using a developer, and etching the substrate using the resist pattern A step of producing a temporary master mold having a pattern of the concavo-convex structure, a step of detecting a defect occurrence position of the pattern of the temporary master mold, and taking statistics of the detected defect occurrence position, from the statistical result of the defect occurrence position , when the difference between the frequency of occurrence of defects in the adjacent regions (pieces / cm ²⁾ exceeds a particular value, the boundary portion adjacent the region pattern Examined the case in the development of the resist layer is pattern to produce the flow direction of the developer along the boundary region, identified as the influence on the flow of developer becomes a cause of defect defect inducing pattern Process and corrected design pattern data obtained by correcting the defect attraction pattern part in the temporary design pattern data so that the end part of the irradiation part in the adjacent region is located in a zigzag direction along the boundary part. A correction master mold having at least two pattern regions having at least a concavo-convex structure, which is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel, is produced based on the generation step and the correction design pattern data. A step of supplying a resist droplet to a predetermined position on a substrate for a replica mold, Forming a resist pattern on the base material by imprinting using a mold, etching the base material using the resist pattern to produce a temporary replica mold having a concavo-convex pattern, and The step of detecting the defect occurrence position of the pattern of the replica mold, the statistics of the detected defect occurrence position, the statistical result of the defect occurrence position, and the boundary portion of the adjacent pattern region from the supply position of the resist droplet Inspecting nearby patterns and identifying a defect attraction pattern that affects the wetting and spreading of the droplets and causes defects when it is a pattern that can cause a droplet flow in a direction perpendicular to the line axis direction; and The defect attraction pattern portion in the corrected design pattern data is aligned with the boundary of the adjacent pattern region at the end of the line. In this configuration, there is a step of generating re-correction design pattern data that is corrected so as to be positioned in a zigzag direction, and a step of producing a master mold based on the re-correction design pattern data.

  As another aspect of the method for producing an imprint mold of the present invention, a base material including a hard mask material layer is used as the base material, the resist pattern is formed on the hard mask material layer, and the resist pattern is interposed therebetween. The hard mask material layer was etched to produce a hard mask, and the substrate was etched through the hard mask to produce the pattern of the concavo-convex structure.

  The pattern forming method of the present invention includes a step of producing a replica mold having a concavo-convex structure by imprint lithography using a master mold produced by any of the above-described imprint mold production methods, and a droplet of a material to be transferred. The supplied transfer substrate and the replica mold are brought close to each other, the droplets are spread between the replica mold and the transfer substrate to form a transfer material layer, and the transfer material layer is cured. And the step of transferring the concavo-convex structure and then separating the cured material layer to be transferred and the replica mold.

A semiconductor device manufacturing method according to the present invention includes two or more pattern regions having at least a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel based on temporary design pattern data. A step of preparing a temporary mold for manufacturing; supplying droplets of a resist to a predetermined position on the semiconductor device manufacturing base material; and imprinting the semiconductor device manufacturing temporary mold on the semiconductor device manufacturing base material Forming a resist pattern on the substrate, etching the base material for manufacturing the semiconductor device using the resist pattern to produce a temporary device having a pattern with a concavo-convex structure, and a position where a defect occurs in the temporary device pattern Statistic of the detected defect occurrence position, the statistical result of the defect occurrence position, and the resist From the supply position of the droplet, examine the pattern of the line-and-space structure in which the uneven structure of the boundary portion near the adjacent pattern area is a pattern that can result in the direction of flow of droplets perpendicular to the line direction a step of identifying a cause to become defective attractant pattern defect affects the spreading of the droplets, the defect inducing pattern portion in the tentatively designed pattern data, the ends of the lines, the boundaries of the adjacent pattern area And a step of generating correction design pattern data that is corrected so as to be positioned in a zigzag manner along a direction along with, and a step of producing a mold for manufacturing a semiconductor device based on the correction design pattern data, and did.

  In the imprint mold manufacturing method of the present invention, it is possible to manufacture a low-defect imprint mold in consideration of the capillary force acting on the developer and the photocurable resin, and the imprint mold of the present invention is formed. The occurrence frequency of defects in the pattern is low, and the pattern forming method of the present invention can form a pattern with high accuracy.

FIG. 1 is a process diagram for explaining an embodiment of a mold manufacturing method of the present invention. FIG. 2 is a plan view for explaining a region where a concavo-convex structure is formed in a mold. FIG. 3 is a diagram for explaining an actinic radiation irradiation site based on temporary design pattern data in the mold manufacturing method of the present invention. FIG. 4 is a diagram for explaining an example of a statistical result of a defect occurrence site in the mold manufacturing method of the present invention. FIG. 5 is a diagram for explaining the actinic radiation irradiation site based on the corrected design pattern data in the mold manufacturing method of the present invention. FIG. 6 is a diagram for explaining an actinic radiation irradiation site based on the corrected design pattern data in the mold manufacturing method of the present invention. FIG. 7 is a diagram for explaining another example of the actinic radiation irradiation site based on the corrected design pattern data in the mold manufacturing method of the present invention. FIG. 8 is a plan view for explaining a region having a concavo-convex structure in a temporary master mold used in the mold manufacturing method of the present invention. FIG. 9 is a diagram for explaining an example of the concavo-convex structure of the temporary master mold produced based on the temporary design pattern data. FIG. 10 is a process diagram for explaining an example of producing a temporary replica mold using a temporary master mold. FIG. 11 is a diagram for explaining an example of a statistical result of a defect occurrence site in the mold manufacturing method of the present invention. FIG. 12 is a view corresponding to FIG. 9 for explaining correction design pattern data in the mold manufacturing method of the present invention. FIG. 13 is a plan view for explaining an embodiment of an imprint mold of the present invention. FIG. 14 is a longitudinal sectional view taken along the line II of the imprint mold shown in FIG. FIG. 15 is a plan view showing an example of a pattern region included in the concavo-convex structure region of the mold of the present invention. FIG. 16 is a plan view showing another example of the pattern region included in the concavo-convex structure region of the mold of the present invention. FIG. 17 is a plan view showing another example of the pattern region included in the uneven structure region of the mold of the present invention. FIG. 18 is an enlarged plan view of a portion surrounded by a chain line in FIG. FIG. 19 is a diagram for explaining the degree of zigzag at the boundary portion of the pattern area of the mold of the present invention. FIG. 20 is a diagram for explaining the zigzag arrangement at the boundary portion of the pattern area of the mold of the present invention. FIG. 21 is a view for explaining another embodiment of the mold of the present invention. FIG. 22 is a view for explaining another embodiment of the mold of the present invention. FIG. 23 is a view for explaining another embodiment of the mold of the present invention. FIG. 24 is a view for explaining another embodiment of the mold of the present invention. FIG. 25 is a process diagram for explaining an embodiment of the pattern forming method of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Note that the drawings are schematic or conceptual, and the dimensions of each member, the ratio of sizes between the members, etc. are not necessarily the same as the actual ones, and represent the same members. However, in some cases, the dimensions and ratios may be different depending on the drawing.

[Mold manufacturing method]
<First Embodiment>
FIG. 1 is a process diagram for explaining an embodiment of a mold manufacturing method of the present invention.
In the mold manufacturing method of the present invention, first, a resist layer 3 is formed by applying an actinic radiation sensitive resist to one main surface 2a of the mold substrate 2 (FIG. 1A).
A region 20 for forming a concavo-convex structure is set on one main surface 2a of the base material 2 for molding. FIG. 2 is a plan view showing an example of the region 20 that forms the concavo-convex structure. As shown in FIG. 2A, the region surrounded by the alternate long and short dash line is the region 20 that forms the concavo-convex structure. The region 20 forming the uneven structure is further divided into a plurality of regions 21 and a region 25 set so as to surround each region 21. FIG. 2B is an enlarged view of a part surrounded by a chain line in FIG. 2A. The region 21 is rectangular, and the region 25 around each region 21 is illustrated by a solid line. It is further subdivided at the boundary part.

  When the base material 2 for mold is used as a mold and the resin composition, which is a material to be transferred, is photocurable, use a material that can transmit irradiation light for curing them. For example, in addition to glass such as quartz glass, silicate glass, calcium fluoride, magnesium fluoride, and acrylic glass, sapphire and gallium nitride, and resins such as polycarbonate, polystyrene, acrylic, and polypropylene, or these Any laminate material can be used. Further, when the transfer material to be used is not photo-curable, or when the light for curing the transfer material can be irradiated from the transfer substrate side, the mold may not be a light-transmitting material. In addition to the above materials, for example, metals such as silicon, nickel, titanium, and aluminum, alloys thereof, oxides, nitrides, or any laminated material thereof can be used.

Moreover, the base material 2 may be provided with a hard mask material layer on the main surface 2a on which the resist layer 3 is formed. Examples of the hard mask material layer include metals such as chromium, tantalum, aluminum, molybdenum, titanium, zirconium, and tungsten, alloys of these metals, metal oxides such as chromium oxide and titanium oxide, chromium nitride, and titanium nitride. It may be composed of one kind of metal nitride, an intermetallic compound such as gallium arsenide, or a combination of two or more kinds, and the material can be selected in consideration of the etching selectivity with the substrate 2 and the like. it can.
The thickness of the base material 2 for molding can be set in consideration of the shape of the concavo-convex structure formed on the main surface 2a, the strength of the base material, suitability for handling, etc., for example, appropriately set in the range of about 300 μm to 10 mm. can do. Further, the base material 2 may have a so-called mesa structure in which the main surface 2a forming the concavo-convex structure has a convex structure of one step or two steps or more with respect to the surrounding area.
As the actinic radiation sensitive resist, known negative and positive resists that can be sensitive to desired actinic radiation such as electron beams, X-rays, and ultraviolet rays can be used. The thickness of the resist layer 3 to be formed is appropriately determined in consideration of the physical strength of the resist to be used, the etching selection ratio between the resist pattern and the substrate 2 (or hard mask material layer) in the etching of the substrate 2 in a later step, and the like. Can be set. In the description of the present embodiment, a case where a positive type actinic radiation sensitive resist is used is taken as an example.

  In the mold manufacturing method of the present invention, next, a chemical beam is irradiated to a desired portion of the resist layer 3 based on the temporary design pattern data (FIG. 1B). Thereby, the irradiated part 4 and the non-irradiated part 5 exist in the resist layer 3. As the actinic radiation, for example, an electron beam, an X-ray, an ultraviolet ray, or the like can be used according to the sensitivity of the resist layer 3. FIG. 3 is a view for explaining the irradiated region 4 and the unirradiated region 5 of the resist layer 3 in the region surrounded by the chain line in FIG. In FIG. 3, the region 21 has a line-and-space state in which irradiated portions 41 (portions with halftone dots) are arranged in parallel via an unirradiated portion 51. Irradiation sites 41 are connected at the ends in the axial direction (Y direction in the figure) every other adjacent irradiation sites 41 by irradiation sites 41a, and are thus continuous in a meandering state. ing. On the other hand, in the region 25, the irradiated part 45 (part with halftone dots) is arranged in parallel via the non-irradiated part 55 to form a line-and-space state. The boundary portion between the region 21 and the region 25 (indicated by the alternate long and short dash line in FIG. 3) is along the X direction shown in the figure, and the axial direction of the irradiation portion 41 in the region 21 and the axial direction of the irradiation portion 45 in the region 25 are Both coincide in the Y direction shown. Each end 41t of the irradiation part 41 in the region 21 is arranged so as to form a straight line along the X direction shown in the figure, and the end 45t of the irradiation part 45 in the region 25 is also a straight line along the X direction shown in the figure. Are arranged to form Further, the axis of the irradiation site 41 (line axis) in the region 21 and the axis of the irradiation site 45 (line axis) in the region 25 coincide with each other, and the end portion 41 t of the irradiation site 41 in the region 21 and the irradiation in the region 25. The end 45t of the part 45 is opposed via a boundary part having a desired width. Further, the wide irradiation portions 43 and 43 for the lead lines are positioned in parallel with the irradiation portion 41 and the irradiation portion 45 from the region 21 toward the region 25 so as to be continuous with both end portions of the irradiation portion 41 in the meandering state. doing.

In the mold manufacturing method of the present invention, next, the resist layer 3 is developed using a developer to form a resist pattern 6 (FIG. 1C). The developer can be selected according to the actinic radiation sensitive resist used for the resist layer 3, for example, TMAH (tetramethylammonium hydroxide), a commercially available developer (for example, ZED manufactured by Nippon Zeon Co., Ltd.). -N50) and the like can be used. The formed resist pattern 6 has an opening 7, and the base material 2 is etched through the resist pattern 6 to produce the temporary master mold 1 having the concavo-convex structure 10 (FIG. 1D). . In the temporary master mold 1 manufactured as described above, the line-and-space uneven structure is formed in the portions corresponding to the regions 21 and 25 with the same line axis direction.
As described above, when the base material 2 includes the hard mask material layer, the hard mask material layer is etched through the resist pattern 6 formed as described above to form a hard mask. The temporary master mold 1 can be produced by etching the substrate 2 through a hard mask.

Next, in the mold manufacturing method of the present invention, the defect occurrence position of the pattern composed of the concavo-convex structure 10 of the temporary master mold 1 is detected. This defect detection can be performed using, for example, an SEM (scanning electron microscope), a semiconductor electron beam inspection apparatus (eXplre-3100 ^™ manufactured by HMI) or the like. Among such defect detection means, in the defect detection using the SEM, it is preferable to arrange a plurality of patterns having the same layout on the master mold so that statistical data can be obtained at a time.

Next, statistics of the defect occurrence positions detected as described above are taken, and from this statistical result, a defect attraction pattern that affects the flow of the developing solution and causes defects is specified. In the statistics of the defect occurrence position, for example, the defect occurrence position and occurrence frequency in the plurality of areas 21 set in the area 20 forming the concavo-convex structure shown in FIG. Investigate. FIG. 4 is a diagram for explaining an example of the statistical result of the defect occurrence position, taking the region 21 and the region 25 shown in FIG. 2B as an example. In the example shown in FIG. 4, the defect portion 10 d (the portion surrounded by a chain line in FIG. 4) having a high defect occurrence frequency is specified from the statistical result of the defect occurrence position. This defective portion 10d is located in the vicinity of the boundary portion in region 21 and region 25. For example, if the difference between the frequency of occurrence of defects in the region 21 the frequency of occurrence of defects in the (number / cm ²⁾ and region 25 (number / cm ²⁾ is more than 10, to investigate the boundary portion between the region 21 and the region 25 The defect site 10d can be specified. Note that the difference in the occurrence frequency (number / cm ² ) of defects, which is a criterion for determining whether or not to investigate the boundary portion between the region 21 and the region 25, is not limited to the above “10”. It can set suitably according to the tolerance | permissible_range in the device etc. which are produced using a print mold.

  In the development of the resist layer 3 using a positive type actinic radiation sensitive resist, the irradiated portion 4 (irradiated portions 41, 43, and 45 in FIG. 3) is gradually removed to form fine concave portions. It becomes deeper as development progresses. When capillary force acts on the developer in such a recess, a developer flow in the axial direction (Y direction in FIG. 3) of the recess is formed, and the removal of the irradiation site 4 remaining in the recess is promoted. Is done. However, if the flow of the developer in the direction along the boundary (the X direction in FIG. 3) exists at the boundary between the region 21 and the region 25, the flow of the developer in the axial direction of the recess is disturbed. Then, a development failure occurs in which a part of the irradiated portion 4 remains without being removed. Further, when the width of the irradiation part 43 for the lead wire is wide, the capillary force acting on the developer from the concave part formed in the irradiation part 43 by the development acts on the developer from the concave part formed in the irradiation parts 41 and 45. Unlike the capillary force, the development defect that a part of the irradiated portion 4 remains without being removed occurs. The portion where such a development failure has occurred becomes a defective portion in which the flow of the developer in the axial direction of the recess is disturbed in the opening 7 of the resist pattern 6, and the substrate 2 is formed via such a resist pattern 6. Similarly, the concavo-convex structure 10 formed by etching has a high possibility of causing defects. The defective portion 10d shown in FIG. 4 is considered to be due to such a disturbance in the flow of the developer. For this reason, a pattern that causes the flow of the developer in the direction along the boundary between the region 21 and the region 25 (the X direction in FIG. 3) is identified as a defect attraction pattern that causes a defect.

  Next, in the mold manufacturing method of the present invention, corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data is generated. In the example shown in FIGS. 3 and 4, the correction is made by correcting the actinic radiation irradiation part so as to inhibit the flow of the developer in the direction along the boundary part between the region 21 and the region 25 (X direction in FIG. 3). Generate design pattern data. FIG. 5 is a view corresponding to FIG. 3 showing actinic radiation irradiation to the resist layer 3 based on such corrected design pattern data. In FIG. 5, a region 21 has a line-and-space state in which irradiated portions 41 ′ (portions with halftone dots) are arranged in parallel via unirradiated portions 51 ′. In the region 25, the irradiated part 45 'is arranged in parallel via the non-irradiated part 55' to form a line and space state.

  FIG. 5 shows irradiation parts 41 ′, 43 ′, 45 ′ and non-irradiation parts 51 ′, 53 ′, 55 ′ shown in FIG. 5 formed based on the corrected design pattern data, and a figure formed based on the temporary design pattern data. As is clear from the comparison with the irradiated portions 41, 43, 45 and the unirradiated portions 51, 55 shown in FIG. 3, the corrected design pattern data includes the position and the region of the end portion in the axial direction of the irradiated portion 41 ′ of the region 21. The positions of the end portions of the 25 irradiation portions 45 'and the lead wire irradiation portions 43' are corrected. That is, the position of the end portion 41′t of the irradiation part 41 ′ in the region 21 is corrected in the axial direction (line axis direction) of the irradiation part, and is indicated by the boundary between the region 21 and the region 25 (shown by a one-dot chain line in FIG. 5). ) In a zigzag direction. Further, the position of the end portion 45 ′ t of the irradiation part 45 ′ in the region 25 is corrected in the axial direction (line axis direction) of the irradiation part, and is located in a zigzag direction along the boundary between the region 21 and the region 25. It has been corrected as follows. Therefore, the axis (line axis) of the irradiation part 41 ′ in the region 21 and the axis (line axis) of the irradiation part 45 ′ coincide with each other, and the end 41 ′ t of the irradiation part 41 ′ and the end of the irradiation part 45 ′. A portion that faces 45′t with a desired interval is zigzag in a direction along the boundary between the region 21 and the region 25. Further, the wide irradiation part 43 existing for the lead lines in the regions 21 and 25 has an axis (line axis) that coincides with the irradiation part 41 ′ located in the region 21 and is connected to the irradiation part 41 ′. The line-and-space structure is composed of a plurality of irradiated parts 43 'and unirradiated parts 53', and is corrected to a structure in which adjacent irradiated parts 43 'are connected by an irradiated part 43'a.

As a result, as the development progresses, the irradiated portions 41 ', 43', 41 'are gradually deepened to form a recess, and the capillary force in the recess acts on the developer to disturb the developer flow. That is, the flow of the developer in the direction along the boundary between the region 21 and the region 25 (the X direction in FIG. 5) is hindered. It should be noted that the length of the gap between the end 41′t and the end 45′t may be uniform or different, and may be different at the boundary between the region 21 and the region 25. It can be set within a range where the flow of the developer in the direction along the line can be inhibited, and can be set as appropriate within a range of 1 to 400 nm, for example.
By manufacturing the master mold based on the corrected design pattern data generated by correcting the temporary design pattern data as described above, it is possible to manufacture a low-defect imprint mold.

  Note that the degree of zigzag at the end 41't of the irradiation part 41 'and the end 45't of the irradiation part 45' in the correction design pattern data described above is at the boundary between the region 21 and the region 25. It can be set as appropriate as long as the flow of the developing solution in the direction along the direction (X direction in FIG. 5) can be hindered. For example, as shown in FIG. 6 (A), the position of the end portion 41′t (the position indicated by the chain line L1) in the axial direction (line axis direction, Y direction shown in the figure) of the irradiation part 41 ′ of the region 21, Position of end portion 45't in the axial direction (line axis direction, Y direction in the figure) of irradiation site 45 'in region 25 on the line axis adjacent to the line axis of irradiation site 41' (position indicated by chain line L2) Can be set to coincide with each other when viewed from the direction perpendicular to the line axis (X direction in the figure). Further, the extent of the zigzag at the end portion 41't of the irradiation portion 41 'and the zigzag at the end portion 45't of the irradiation portion 45' is further strengthened, and as shown in FIG. The position (L1) of the end portion 41′t in the axial direction of 41 ′ and the position (L2) of the end portion 45′t in the axial direction of the irradiation part 45 ′ extend in the direction of the pattern area of the other party until they cross each other. It may be. The distance D at which the end 41′t and the end 41′t cross each other can be set, for example, in the range of 0 to 400 nm. In FIG. 6, the boundary portion between the region 21 and the region 25 is indicated by a one-dot chain line.

Further, in the corrected design pattern data, for example, as shown in FIG. 7A, a plurality (two in the illustrated example) of irradiation portions 41 ′ and irradiation portions 45 ′ are used as repeating units, and end portions 41′t and You may set so that the position of edge part 45't may become a zigzag. In FIG. 5, the positions of the end portions 41′t and 45′t at the boundary between the region 21 and the region 25 located on the lower side in the drawing constitute such a zigzag. In the example shown in FIG. 5, the shape of the end portion 41′t and the end portion 45′t constituting the zigzag is different between the lower side and the upper side of the region 21 in the drawing. Of course there may be.
Further, as shown in FIG. 7B, the number of end portions 41′t of the irradiation portion 41 ′ protruding from the region 21 in the direction of the region 25 and the irradiation portion 45 ′ protruding from the region 25 in the direction of the region 21. A zigzag may be set such that the number of end portions 45′t is different.
In FIG. 7, the boundary between the region 21 and the region 25 is indicated by a one-dot chain line.
In addition, even if the pattern is located at the boundary part between the region 21 and the region 25, the pattern located at the boundary part between the regions 25, or the wide pattern, if the defect attraction pattern is not determined from the statistical result of the defect occurrence position, For the part, the generation of the corrected design pattern data by the pattern correction as described above may not be performed.
The region 20, the region 21, and the region 25 that form the concavo-convex structure in the above embodiment are examples, and are not limited to these.

<Second Embodiment>
In the mold manufacturing method of the present invention, first, a temporary master mold having a desired uneven structure is prepared based on the temporary design pattern data. FIG. 8 is a plan view showing an example of a temporary master mold. In FIG. 8, the temporary master mold 101 includes a region 120 having a concavo-convex structure (a region surrounded by an alternate long and short dash line in the drawing) on one main surface 102 a of the base material 102. This area 120 is divided into a plurality of main pattern areas 121 and sub-pattern areas 125 set so as to surround each main pattern area 121. FIG. 8B is an enlarged view of a portion surrounded by a chain line in FIG. 8A. The main pattern region 121 is a square shape, and the sub-pattern region 125 positioned around each main pattern region 121 is Further, it is further subdivided at the boundary portion illustrated by the solid line. The region 120 having such a concavo-convex structure, the main pattern region 21, and the sub pattern region 25 are examples, and are not limited to these.
The base material 102 of the temporary master mold can be made of the same material as the base material 2 for molding described above. In addition, in order to facilitate peeling off from the resist pattern in a subsequent process, the base material 102 may include a release agent layer on the main surface 102a. The base material 102 may have a so-called mesa structure in which the main surface 102a forming the concavo-convex structure has a convex structure of one step or two or more steps with respect to the surrounding area.

  FIG. 9 is a diagram for explaining an example of the concavo-convex structure of the temporary master mold produced based on the temporary design pattern data, and is an enlarged view of a portion surrounded by a chain line in FIG. In FIG. 9, the boundary portion (indicated by the alternate long and short dash line in FIG. 9) between the main pattern region 121 and the sub pattern region 125 is located along the arrow X direction shown in the figure. Are each provided with a concavo-convex structure 130. The concavo-convex structure 130 located in the main pattern region 121 is a line-and-space structure in which concave portions 131 (parts with halftone dots) are arranged in parallel via the convex portions 132. A pair of common recesses 133 (parts with halftone dots) are located at both ends of the main pattern region 121, and every other recess 131 that constitutes a line-and-space so as to form a so-called comb shape. The same common convex part 133 is connected. The axial direction (line axis direction) of the recess 131 is along the arrow Y direction shown in the figure, and the common recess 133 is the direction of the boundary portion between the main pattern region 121 and the sub pattern region 125 (X direction). It is along.

  On the other hand, the concavo-convex structure 130 located in the sub-pattern region 125 is a line-and-space structure in which the concave portions 135 (parts with halftone dots) are arranged in parallel via the convex portions 136, and the axial direction (line (Axial direction) is along the arrow Y direction shown in the figure, and coincides with the axial direction (line axis direction) of the recess 131 of the main pattern region 121. In addition, the axis of the recess 131 (line axis) in the region 121 and the axis of the recess 135 (line axis) in the region 125 coincide. And the end part 135t of the recessed part 135 located in the sub pattern area | region 125 is arranged so that a straight line may be made along the X direction of illustration, and this edge part 135t is desired from the common recessed part 133 of the main pattern area | region. It is located at the part through the boundary part of the width. Further, a wide concave portion 138 for the lead line is positioned in parallel with the concave portion 131 and the concave portion 135 from the main pattern region 121 toward the sub pattern region 125 so as to be continuous with the respective common concave portions 133 constituting the comb shape. doing.

Next, in the mold manufacturing method of the present invention, a temporary replica mold is manufactured using a temporary master mold. FIG. 10 is a process diagram for explaining a production example of a temporary replica mold using such a temporary master mold.
First, a resist droplet 211 is supplied to a predetermined position on one main surface 202a of the temporary replica mold substrate 202 (FIG. 10A). The base material 202 for temporary replica molding can be made of the same material as the base material 2 for molding described above. Therefore, the base material 202 may include a hard mask material layer, and the base material 202 may have a mesa structure. The supply of the resist droplets 211 to the base material 202 can be performed by ink jet based on a desired drop map.
Next, the temporary master mold 101 and the base material 202 are brought close to each other and the droplet 211 is developed to form a resist layer 212 (FIG. 10B). In this state, the resist layer 212 is cured, and then cured. The resist layer 212 and the temporary master mold 101 are separated to form a resist pattern 215 on one main surface 202a of the base material 202 (FIG. 10C).

Next, the base material 202 is etched through the resist pattern 215 to produce a temporary replica mold 201 (FIG. 10D). In the temporary replica mold 201 manufactured in this way, the temporary master mold is formed in the main pattern area 221 and the sub pattern area 225 (not shown) corresponding to the main pattern area 121 and the sub pattern area 125 of the used temporary master mold 101. A line-and-space concavo-convex structure 230 in which the concavo-convex structure of the concavo-convex structure 130 of 101 is inverted is formed.
As described above, when the base material 202 includes a hard mask material layer, the hard mask material layer is etched through the resist pattern 215 formed as described above to form a hard mask. The temporary replica mold 201 can be manufactured by etching the base material 202 through a mask.
Next, in the mold manufacturing method of the present invention, the defect occurrence position of the pattern of the temporary replica mold 201 is detected. This defect detection can be performed in the same manner as the defect detection in the first embodiment described above.

Next, the statistics of the defect occurrence position detected as described above are taken, and from the statistical result and the supply position of the resist droplet 211 to the base material 202 at the time of preparing the temporary replica mold, the wetting spread of the droplet 211 is performed. A defect attraction pattern that influences and causes a defect is identified. In the statistics of the defect occurrence position, for example, the defect occurrence position and occurrence frequency in the region where the uneven structure 230 of the temporary replica mold 201 is formed are examined. FIG. 11 shows a portion where droplets are frequently generated in the main pattern region 221 and the sub pattern region 225 of the temporary replica mold 201 corresponding to the main pattern region 121 and the sub pattern region 125 of the used temporary master mold 101, and droplets. It is a figure which shows the supply position P (part shown with the dashed line in FIG. 11) of 211.
In the example shown in FIG. 11, the defect part 230 d (part surrounded by a one-dot chain line in FIG. 11) is specified from the statistical result of the defect occurrence position of the temporary replica mold 201. The defective portion 230d is located in the vicinity of the boundary portion in the main pattern region 221 and the sub pattern region 225.

  Here, the capillary force of the concavo-convex structure 130 of the temporary master mold 101 acts on the droplet 211 when the temporary master mold 101 and the base material 202 are brought close to each other. This capillary force is determined by the size of the gap between the temporary master mold 101 and the base material 202, the depth and width of the recesses 131, 135, and 138 of the temporary master mold 101, and the capillary force acts on the capillary force. The wetting and spreading of the droplet 211 is easy to move in the line axis direction (Y direction shown in FIG. 9). Then, when considering the supply position P of the droplet 211 to the base material 202, a setting that can effectively utilize the ease of movement of the temporary master mold 101 in the line axis direction (Y direction shown in FIG. 9), that is, The pitch of the supply position P in the line axis direction is set larger than the pitch of the supply position P in the direction orthogonal to the line axis direction (the X direction shown in FIG. 9).

  Due to the wetting and spreading of the droplet 211 and the position of the defective portion 230d, the defect attraction pattern that causes the defective portion 230d is obstructed by the action of the capillary force on the droplet 211, and in the line axis direction. This is considered to be a pattern that affects the wetting and spreading of the droplet 211 and causes disturbance. When attention is paid to the temporary master mold 101 from this point of view, in the main pattern region 121, there is a common recess 133 in the vicinity of the boundary portion with the sub-pattern region 125 in the illustrated X direction along the boundary portion. An end portion 135t of the recess 135 located in the sub-pattern region 125 is located at a portion through a boundary portion having a desired width from the common recess 133 in the main pattern region. Such a portion of the temporary master mold 101 can cause the flow of the droplets 211 in a direction orthogonal to the line axis direction (X direction shown in FIG. 9). Further, the sub-pattern region 125 has a wide concave portion 138 for the lead line, and the action of the capillary force on the droplet 211 in the concave portion 138 is caused by the capillary on the droplet 211 in the other portion of the concave-convex structure 130. Unlike the action of force, it affects the wetting and spreading of the droplet 211. Accordingly, such a portion of the temporary master mold 101 is a defect attraction pattern that affects the wetting and spreading of the droplet 211 and causes a defect.

Next, in the mold manufacturing method of the present invention, corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data is generated. And a master mold is produced based on this correction | amendment design pattern data. FIG. 12 is a view corresponding to FIG. 9 for explaining an example of the concavo-convex structure of the master mold produced based on the corrected design pattern data obtained by correcting the temporary design pattern data of the temporary master mold 101 shown in FIG. is there.
In FIG. 12, the concavo-convex structure 130 ′ located in the main pattern region 121 is a line and space structure in which concave portions 131 ′ (parts with halftone dots) are arranged in parallel via the convex portions 132 ′. In FIG. 9, a pair of common recesses 133 to which every other recess 131 is connected so as to form a so-called comb shape has a plurality of recesses 133 whose axes (line axes) coincide with the recesses 131 ′. ′ And a concave portion 133′a connecting the desired portions of the adjacent concave portion 133 ′. Of the plurality of recesses 133 ′, the end portion 133′t of the recess portion 133 ′ to which every other recess portion 131 ′ is connected is the end portion 133′t of the recess portion 133 ′ to which the recess portion 131 ′ is not connected. Rather than the sub-pattern region 125. Therefore, the end 133′t of the recess 133 ′ is located in a zigzag manner in the direction along the boundary between the main pattern region 121 and the sub pattern region 125 (shown by a one-dot chain line in FIG. 12).

In FIG. 12, the concavo-convex structure 130 ′ located in the sub-pattern region 125 is a line and space structure in which concave portions 135 ′ (parts with halftone dots) are arranged in parallel via the convex portions 136 ′. The position of the end 135′t of the recess 135 ′ is corrected in the axial direction (line axis direction), and the end 135′t is zigzag in the direction along the boundary between the main pattern region 121 and the sub pattern region 125. Is located. In FIG. 9, the wide concave portion 138 that has existed for the lead line has a plurality of shafts (line axes) that coincide with the concave portion 131 ′ located in the main pattern region 121 and that are connected to the desired concave portion 133 ′. The line-and-space structure is composed of a concave portion 138 'and a convex portion 139, and the desired position of the adjacent concave portion 138' is corrected to a structure connected by the concave portion 138'a. Therefore, the end 133′t of the recess 133 ′ in the main pattern region 121 and the end 135′t of the recess 135 ′ in the sub pattern region 125 have the same axis (line axis) and have a desired interval. The locations facing each other are zigzag in the direction along the boundary between the main pattern region 121 and the sub pattern region 125. As a result, wetting and spreading of the droplet in the direction along the boundary between the main pattern region 121 and the sub-pattern region 125 (X direction in FIG. 12) is inhibited, and the action of the capillary force on the droplet 211 is stabilized. Thus, the influence on the wetting and spreading of the droplet 211 in the line axis direction is greatly reduced.
By manufacturing the master mold based on the corrected design pattern data generated by correcting the temporary design pattern data as described above, it is possible to manufacture a low-defect imprint mold.

Also in the above-described embodiment, the zigzag of the end 133′t of the recess 133 ′ in the main pattern area 121 and the zigzag of the end 135′t of the recess 135 ′ in the sub pattern area 125 in the corrected design pattern data. As described with reference to FIGS. 6 and 7 in the first embodiment, the degree, the shape, and the like can be appropriately set.
Alternatively, a plurality of temporary replica molds may be produced using the temporary master mold 101, statistics of defect occurrence positions in the plurality of temporary replica molds may be taken, and defect attraction patterns may be specified based on the statistical results.

<Third Embodiment>
In the mold manufacturing method of the present invention, first, an actinic radiation sensitive resist is applied on a mold substrate to form a resist layer, and actinic radiation is applied to a desired portion of the resist layer based on temporary design pattern data. Irradiate. Next, the resist layer is developed using a developing solution to form a resist pattern, and the mold base is etched through the resist pattern to produce a temporary master mold having a concavo-convex pattern. Detecting the defect occurrence position of the pattern of the temporary master mold produced in this way, taking statistics of the detected defect occurrence position, and from the statistical result of the defect occurrence position, it affects the flow of the developer and causes defects. Identify defect attraction patterns. Then, corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data is generated. The steps so far can be the same as those in the first embodiment.
Next, a correction master mold is produced based on the correction design pattern data generated as described above. Then, a resist droplet is supplied to a predetermined position on the base material for molding, a resist pattern is formed on the base material by imprinting using a correction master mold, and the base material for molding is formed via this resist pattern. Is etched to prepare a temporary replica mold having a pattern of uneven structure. Next, detect the defect occurrence position of the pattern of the temporary replica mold, take statistics of the detected defect occurrence position, and from the statistical result of the defect occurrence position and the supply position of the resist droplet, we will spread the droplet A defect attraction pattern that influences and causes a defect is identified. Next, recorrected design pattern data obtained by correcting the defect attraction pattern portion in the corrected design pattern data is generated. The process from the imprint using such a correction master mold to the generation of recorrection design pattern data is from the imprint using the temporary master mold in the second embodiment described above to the generation of correction design pattern data. It can be the same as that of the process.
Thereafter, a master mold is produced based on the recorrected design pattern data.

Such a mold manufacturing method of the present invention specifies and eliminates the cause of the defect that affects the flow of the developer in the development process of the master mold production and causes imperfections in the imprint of the replica mold production. Since the cause of the defect that affects the wetting spread is identified and eliminated, it is possible to manufacture an imprint mold with extremely few defects.
It should be noted that a plurality of temporary replica molds may be produced using the correction master mold, statistics of defect occurrence positions in the plurality of temporary replica molds may be taken, and defect attraction patterns may be specified based on the statistical results.

[mold]
<First Embodiment>
FIG. 13 is a plan view for explaining an embodiment of an imprint mold of the present invention, and FIG. 14 is a longitudinal sectional view taken along line II of the imprint mold shown in FIG. is there. 13 and 14, the mold 301 of the present invention has a base material 302, and an uneven structure region 303 is located on one main surface 302 a of the base material 302. The base material 302 has a mesa structure including a base portion 302A and a convex structure portion 302B that is raised with respect to the base portion 302A, and the concavo-convex structure region 303 is located in the convex structure portion 302B. Note that the substrate 302 may have other shapes such as a flat plate shape instead of a mesa structure.
For the base material 302 of the mold 301, when the material to be transferred is photocurable, a material that can transmit the irradiation light for curing the material can be used. For example, quartz glass, silicate glass, fluorine In addition to glass such as calcium fluoride, magnesium fluoride, and acrylic glass, sapphire and gallium nitride, resin such as polycarbonate, polystyrene, acrylic, and polypropylene, or any laminated material thereof can be used. Further, when the transfer material to be used is not photo-curable, or when the light for curing the transfer material can be irradiated from the transfer substrate side, the mold may not be a light-transmitting material. In addition to the above materials, for example, metals such as silicon, nickel, titanium, and aluminum, alloys thereof, oxides, nitrides, or any laminated material thereof can be used.

Further, in order to facilitate the peeling between the material to be transferred and the mold, the base material 302 of the mold 301 may include a release agent layer on the main surface 302a. However, the release agent layer is present on the main surface 302a, and the wettability between the material to be transferred and the main surface 302a is reduced, so that the capillary force acting on the droplets of the material to be transferred at the time of imprinting is reduced, which is a problem. In the case of the above, it is preferable to consider the releasability and the wettability of droplets.
The thickness of the base material 302 of the mold 301 can be set in consideration of the shape of the concavo-convex structure provided on the main surface 302a, the strength of the base material, suitability for handling, etc. For example, the thickness is appropriately set in the range of about 300 μm to 10 mm. be able to.
The concavo-convex structure region 303 provided in the mold 301 of the present invention is divided into a plurality of pattern regions including two or more pattern regions having a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel. ing. And in the pattern area | region which has the uneven structure which is a line and space structure, 1 or more sets of pattern area | regions which have the relationship adjacent along a line axis direction exist.

15 to 17 are plan views illustrating examples of pattern regions included in the concavo-convex structure region 303. In the example shown in FIG. 15, the pattern areas P _A partitioned by the boundary portions are arranged in a grid pattern, and each pattern area P _A has irregularities of a line-and-space structure in which the illustrated arrow Y direction is the line axis direction. It has a structure. Accordingly, in a relationship all the pattern regions P _A are adjacent along a line direction (shown by the arrow Y direction).
In the example shown in FIG. 16, the pattern areas P _A and P _B are alternately arranged in the illustrated arrow Y direction, and the pattern areas P _A and P _B are respectively along the illustrated arrow X direction. Are divided and arranged at the boundary part. Each pattern region P _A has a concavo-convex structure with a line-and-space structure in which the illustrated arrow Y direction is the line axis direction, and each pattern region P _B also has the illustrated arrow Y direction in the line axis direction. It has an uneven structure with a certain line and space structure. Therefore, all the pattern areas P _A and P _B are adjacent to each other along the line axis direction (the arrow Y direction in the figure).
In the example shown in FIG. 17, the pattern areas P _A and P _B are alternately arranged in the direction indicated by the arrow Y, and the pattern areas P _C and P _D are alternately arranged. On the other hand, in the illustrated arrow X direction, the pattern areas P _A and P _C partitioned by the boundary portion are alternately arranged, and the pattern areas P _B and P _D are alternately arranged. Then, the pattern area P _A and the pattern area P _B, but the direction of arrow Y shown has a concavo-convex structure of the line-and-space structure is a line axis, the pattern region P _C and the pattern region P _D is the line It does not have an uneven structure of an and space structure, or has an uneven structure of a line and space structure in which the arrow X direction shown in the figure is the line axis direction. In this case, the pattern area P _A and the pattern area P _B are adjacent to each other along the line axis direction (the arrow Y direction in the drawing). However, the pattern area P _C, the pattern area P _D, to any other pattern area, not in the above adjacency.

The uneven structure in the pattern region that does not have the line-and-space structure uneven structure is not particularly limited, and may be an arbitrary uneven structure such as a hole structure or a pillar structure. Further, as described above, the imprint mold of the present invention is a pattern region having a concavo-convex structure that is a line-and-space structure, and there is one or more sets of pattern regions that are adjacent to each other along the line axis direction. To do. Thus, for example, in FIGS. 15 to 17 described above, the pattern area having no uneven structure of the line-and-space structure in the plurality of pattern regions P _A may be present.
In the mold 301 of the present invention, the end of the line of each pattern region is between the pattern regions at the boundary part of at least one set of pattern regions among the pattern regions in the adjacent relationship as illustrated in FIGS. It is located in a zigzag direction along the boundary.

18 is an enlarged plan view of a portion surrounded by a chain line in FIG. In FIG. 18, the concavo-convex structure 310 included in the pattern region P _A is a line-and-space structure in which convex portions 311 (parts with halftone dots) are arranged in parallel via the concave portions 312, and the line axis direction is illustrated. Along the arrow Y direction. At every other end in the axial direction (Y direction shown in the figure), the protrusions 311 are connected between the adjacent protrusions 311 by the protrusions 311a, and are thus continuous in a meandering state. .
On the other hand, the concavo-convex structure 320 of the pattern region P _B is a line-and-space structure in which convex portions 321 (parts with halftone dots) are arranged in parallel via the concave portions 322, and the line axis direction is the arrow Y shown in the drawing. It is along the direction, and the line axis of the convex portion 321 is coincident with the line axis of the convex portion 311 of the pattern region P _a. Furthermore, wide protrusion 325, 325 for the lead wire so as to be continuous to both end portions of the projecting portion 311 of the serpentine state, parallel to the ridge 311 and the projection 321, the pattern from the pattern area P _A region P _B Is continuous. In FIG. 18, the boundary portion between the pattern area P _A and the pattern area P _B is indicated by a one-dot chain line.
The widths of the convex portions 311 and 321 constituting the concavo-convex structures 310 and 320 can be appropriately set within a range of 5 to 50 nm, and the widths of the concave portions 312 and 322 can be appropriately set within a range of 5 to 50 nm.

Further, the upper side in FIG pattern region P _A, an end portion 311T of the plurality of protrusions 311, every other, since the protruding pattern area P _B direction than adjacent ends 311T, protrusion 311 The end portion 311t is zigzag in the direction along the boundary between the pattern region P _A and the pattern region P _B. Similarly, the end portion 321T of the plurality of protrusions 321 of the pattern area P _B is every other, since the protruding pattern regions P _A direction than adjacent ends 321T, end 321T of the protrusion 321 The zigzag is located in the direction along the boundary between the pattern area P _A and the pattern area P _B. Further, the lower side in view of the pattern area P _A, an end portion 311T of the plurality of protrusions 311, alternately with two units, since the protruding pattern area P _B direction than adjacent ends 311T, The end 311t of the convex portion 311 is located in a zigzag manner in the direction along the boundary between the pattern region P _A and the pattern region P _B. Similarly, the end portion 321T of the plurality of protrusions 321 of the pattern area P _B are alternately two units, since the protruding pattern regions P _A direction than adjacent ends 321T, the ends of the protrusions 321 321t is located in a zigzag manner in the direction along the boundary between the pattern area P _A and the pattern area P _B. And as for the convex part 311 and the convex part 321 which have a common line axis, the edge part 311t and the edge part 321t have opposed through the boundary part of desired width. Accordingly, the gap between the end 311t of the convex portion 311 and the end 321t of the convex portion 321 is located in a zigzag manner in the direction along the boundary between the pattern region P _A and the pattern region P _B. Such end 311t and the end portion 321t and a length of the gap which faces (length of the arrow Y direction) may be uniform, and may be different, and the pattern region P _A It can be set in a range that can prevent the flow of liquid droplets in the direction along the boundary with the pattern region P _B, and can be set as appropriate in the range of 1 to 400 nm, for example. In the illustrated example, between the lower and upper in the figure in the pattern area P _A, an end portion 311t constituting the zigzag, but is different form of end 321T, it may be the same form Of course.

For example, as shown in FIG. 19A, the degree of zigzag at the end 311t of the projection 311 in the pattern area P _A and the degree of zigzag at the end 321t of the projection 321 in the pattern area P _B axial direction of the convex portion 311 of the P _a and the position of the end portion 311t of the (line axis, Y direction shown) (the position shown by a chain line L1), the pattern region on the line shaft adjacent to the line axis of the protrusion 311 The position of the end 321t (the position indicated by the chain line L2) in the axial direction (line axis direction, Y direction shown in the figure) of the convex portion 321 of P _B matches with the right angle direction (X direction shown in the figure) of the line axis. can be on the order such, preferably, as shown in FIG. 19 (B), the position of the end portion 311t of the projecting portion 311 of the pattern area P _a and (L1), the pattern area on the adjacent line axis P _B Of the convex portion 321 Position parts 321t and (L2), but may be one that extends in the pattern area direction of the other party until the disagreement. The distance D at which the end 311t and the end 321t cross each other can be set, for example, in the range of 0 to 400 nm. In FIG. 19, the boundary between the pattern area P _A and the pattern area P _B is indicated by an alternate long and short dash line.

Further, the zigzag arrangement at the end 311t of the projection 311 in the pattern area P _A and the zigzag arrangement at the end 321t of the projection 321 in the pattern area P _B are not limited to the above-described modes. For example, as shown in FIG. 20A, the positions of the end 311t and the end 321t with a plurality of (two in the illustrated example) convex portions 311 and convex portions 321 having the same end position as a repeating unit. May be set to be zigzag. In FIG. 18, the positions of the end portion 311t and the end portion 321t at the boundary between the pattern region P _A and the pattern region P _B located on the lower side in the drawing constitute such a zigzag. Further, FIG. 20 as shown (B), the the number of projections such as 311 to end 311t protrudes from the pattern area P _A to the pattern area P _B direction, the end portion of the pattern area P _B to the pattern area P _A direction You may set so that the number of the protrusions 321 which 321t protrudes may become a different zigzag arrangement. In FIG 20, it illustrates a boundary portion of the pattern region P _A and the pattern area P _B by the one-dot chain line.
Such a mold 301 is brought close to the substrate in imprinting, and along the boundary between the pattern region P _A and the pattern region P _B when droplets of the material to be transferred wet and spread in the gap between the mold 301 and the substrate. The flow of the droplets (the flow indicated by the arrow X in FIG. 18) is inhibited, and the droplets flow along the line axis direction of the projections 311 and 321 generated by the action of the capillary force of the concavo-convex structure. It is suppressed that influence (flow shown by arrow Y in FIG. 18) is exerted. Thereby, the mold 301 of the present invention has a low occurrence frequency of defects in the pattern to be formed.

<Second Embodiment>
FIG. 21 is a view for explaining another embodiment of the mold of the present invention, and is an enlarged plan view corresponding to FIG. The mold 301 ′ shown in FIG. 21 is the same as the mold 301 shown in FIG. 18 except that the lead wire protrusions are different. Therefore, the concavo-convex structure 310 included in the pattern region P _A is a line-and-space structure in which convex portions 311 (parts with halftone dots) are arranged in parallel via the concave portions 312, and the line axis direction is the arrow Y shown in the drawing. Along the direction. Further, the concavo-convex structure 320 included in the pattern region P _B is a line-and-space structure in which convex portions 321 (parts with halftone dots) are arranged in parallel via the concave portions 322, and the line axis direction is an arrow Y shown in the drawing. It is along the direction, and the line axis of the convex portion 321 coincides with the line axis of the convex portion 311 of the pattern region P _a. In FIG 21, it illustrates a boundary portion of the pattern region P _A and the pattern area P _B by the one-dot chain line.

The protruding portion for the lead line of the mold 301 ′ shown in FIG. 21 is subdivided into a plurality of protruding portions 328, and has a line and space structure in which the recessed portion 329 is located between the protruding portions 328. Different from the mold 301 shown in FIG. Like the other convex portions 311 and 321, the lead line convex portion 328 has a line axis direction along the arrow Y direction shown in the drawing, and the line axis of the convex portion 328 is a pattern. It coincides with the line axis of the predetermined convex portion 311 in the region P _A and is connected to the convex portion 311. Further, the adjacent lead wire projections 328 are connected by a projection 328a.
Such a mold 301 ′ is brought close to the substrate in imprinting, and when a droplet of the material to be transferred wets and spreads in the gap between the mold 301 ′ and the substrate, the boundary portion between the pattern region P _A and the pattern region P _B. Generation of the flow of droplets along the line (the flow indicated by the arrow X in FIG. 21) is inhibited, and the protrusions for the lead lines are not wide protrusions but are subdivided into a plurality of protrusions. Since it has an and-space structure, the flow of droplets along the line axis direction of the convex portions 311, the convex portions 321, and the convex portions 328 generated by the action of the capillary force of the concave-convex structure (indicated by an arrow Y in FIG. 21) The influence on the flow) is suppressed. Thereby, the mold 301 ′ of the present invention has a low occurrence frequency of defects in the pattern to be formed.

<Third Embodiment>
The mold of the present embodiment has a base material and a concavo-convex structure region on one main surface of the base material, like the mold 301 described above. The concavo-convex structure region is divided into a plurality of pattern regions including two or more pattern regions having a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel. And in the pattern area | region which has the uneven structure which is a line and space structure, 1 or more sets of pattern area | regions which have the relationship adjacent along a line axis direction exist. As an example of the pattern region included in such a concavo-convex structure region, the same ones as illustrated in FIGS. 15 to 17 in the description of the mold 301 can be given. The base material may have a flat plate shape or a mesa structure.
FIG. 22 is a view for explaining the mold of this embodiment, and is an enlarged plan view corresponding to FIG. In the mold 401 shown in FIG. 22, the concavo-convex structure 410 included in the pattern region P _A is a line-and-space structure in which convex portions 411 (parts with halftone dots) are arranged in parallel via the concave portions 412. The axial direction is along the arrow Y direction shown in the figure. Further, on the boundary part side of the pattern area P _{A with} the pattern area P _B (upper side and lower side of the pattern area P _{A in} the figure), the convex part 413 is located so as to share the line axis with the convex part 411. Adjacent convex portions 413 are connected by a convex portion 413a to constitute a set of common convex portions. And every other convex part 413 which comprises each common convex part is connected to the convex part 411, and, thereby, what is called a comb shape is comprised.

On the other hand, the concavo-convex structure 420 of the pattern region P _B is a line-and-space structure in which convex portions 421 (parts with halftone dots) are arranged in parallel via the concave portions 422, and the line axis direction is the arrow Y shown in the figure. It is along the direction, and the line axis of the convex portion 421, projecting portion 411 of the pattern region P _a, coincides with the line axis of the convex portion 413. Further, the wide protrusions 425 for the lead lines are positioned in parallel with the other protrusions 411 and 421 so as to be continuous with the respective common recesses formed by the protrusions 413. In FIG. 22, the boundary between the pattern area P _A and the pattern area P _B is indicated by an alternate long and short dash line.
The widths of the convex portions 411 and 421 constituting the concavo-convex structures 410 and 420 can be appropriately set within a range of 5 to 50 nm, and the widths of the concave portions 412 and 422 can be set within a range of 5 to 50 nm.

The end portion 413T of the plurality of protrusions 413 of the pattern region P _A is every other, since the protruding pattern area P _B direction than adjacent ends 413T, end 413T of the protrusions 413, They are zigzag in the direction along the boundary between the pattern area P _A and the pattern area P _B. Similarly, the end portion 421T of the plurality of protrusions 421 of the pattern area P _B is every other, since the protruding pattern regions P _A direction than adjacent ends 421T, end 421T of the protrusion 421 The zigzag is located in the direction along the boundary between the pattern area P _A and the pattern area P _B. And the convex part 413 and the convex part 421 which have a common line axis have the edge part 413t and the edge part 421t facing each other via the boundary part of desired width. Therefore, the gap portion where the end 413t of the convex portion 413 and the end 421t of the convex portion 421 face each other is located in a zigzag manner in the direction along the boundary between the pattern region P _A and the pattern region P _B. Such end 413t and the end portion 421t and a length of the gap which faces (length of the arrow Y direction) may be uniform, and may be different, and the pattern region P _A It can be set in a range that can prevent the flow of liquid droplets in the direction along the boundary with the pattern region P _B, and can be set as appropriate in the range of 1 to 400 nm, for example.
The degree of zigzag at the end 413t of the convex part 413 of the pattern area P _A and the degree of zigzag at the end 421t of the convex part 421 of the pattern area P _B are the end of the convex part 311 of the pattern area P _A of the mold 301 described above. The degree of zigzag of the portion 311t and the degree of zigzag of the end 321t of the convex portion 321 of the pattern region P _B can be set.
Further, the zigzag arrangement of the end portions 413t of the convex portions 413 in the pattern area P _A and the zigzag arrangement of the end portions 421t of the convex portions 421 of the pattern area P _B are not limited to the above-described modes, and the mold 301 described above. In the description, it is possible to adopt an aspect as illustrated in FIG.

Such a mold 401 is brought close to the substrate in imprinting, and along the boundary between the pattern region P _A and the pattern region P _B when a droplet of the material to be transferred spreads in the gap between the mold 401 and the substrate. Generation of the droplet flow (flow indicated by the arrow X in FIG. 22) is hindered, and along the line axis direction of the convex portion 411, the convex portion 413, and the convex portion 421 generated by the action of the capillary force of the concave-convex structure. The influence of the droplet flow (the flow indicated by the arrow Y in FIG. 22) is suppressed. Thereby, the mold 401 of the present invention has a low occurrence frequency of defects in the pattern to be formed.

<Fourth Embodiment>
FIG. 23 is a view for explaining another embodiment of the mold of the present invention, and is an enlarged plan view corresponding to FIG. The mold 401 ′ shown in FIG. 23 is the same as the mold 401 shown in FIG. 22 described above except that the lead wire projections are different. Therefore, the concavo-convex structure 410 included in the pattern region P _A is a line-and-space structure in which convex portions 411 (parts with halftone dots) are arranged in parallel via the concave portions 412, and the line axis direction is the arrow Y shown in the drawing. Along the direction. And the convex part 413 is located so that the convex part 411 and the line axis may be shared on the boundary part side of the pattern area P _{A with} the pattern area P _B , and the adjacent convex part 413 is formed by the convex part 413a. In addition to being connected, every other convex portion 413 is connected to the convex portion 411 to form a so-called comb shape. Further, the concavo-convex structure 420 included in the pattern region P _B is a line-and-space structure in which convex portions 421 (parts with halftone dots) are arranged in parallel via the concave portions 422, and the line axis direction is the arrow Y shown in the drawing. It is along the direction, and the line axis of the convex portion 421 coincides with the line axis of the convex portion 411, the convex portion 413 of the pattern region P _a. In FIG. 23, the boundary between the pattern area P _A and the pattern area P _B is indicated by an alternate long and short dash line.

The protrusions for the lead lines of the mold 401 ′ shown in FIG. 23 are subdivided into a plurality of protrusions 428, and have the above-described line and space structure in which the recesses 429 are located between the protrusions 428. Different from the mold 401 shown in FIG. The lead line convex portion 428 located in the pattern region P _B has a line axis direction along the arrow Y direction shown in the drawing, as in the other convex portions 411, 413, and 421. line shaft parts 428, coincides with the line axis of a given convex portion 413 in the pattern area P _a, is connected to the convex portion 413. Further, the adjacent lead wire convex portions 428 are connected by a convex portion 428a.

Such a mold 401 ′ is brought close to the substrate in imprinting, and when a droplet of the material to be transferred wets and spreads in the gap between the mold 401 ′ and the substrate, the boundary portion between the pattern region P _A and the pattern region P _B. Generation of the flow of droplets along the line (the flow indicated by the arrow X in FIG. 23) is inhibited, and the protrusions for the lead lines are not wide protrusions but are subdivided into a plurality of protrusions. Since it has an and-space structure, the flow of droplets along the line axis direction of the convex portion 411, the convex portion 413, the convex portion 421, and the convex portion 428 generated by the action of the capillary force of the concave-convex structure (arrow in FIG. 23) The influence on the flow indicated by Y) is suppressed. As a result, the mold 401 ′ of the present invention has a low occurrence frequency of defects in the pattern to be formed.
The embodiment of the mold described above is an exemplification, and the mold of the present invention is not limited to these. For example, the concave and convex portions in the above-described embodiment may have an uneven structure.

Further, in the mold 401 ′ shown in FIG. 23 described above, the lead lines having a line-and-space structure are extended along the line axis direction of the other protrusions 421 located in the pattern region P _B. In the case where the lead line is extended in a direction different from the line axis direction, it is preferable that the line and space structure is similarly used. FIG. 24 is a diagram showing an example of such a lead line. In FIG. 24A, the lead line extends in the line axis direction (direction indicated by arrow Y) of the other convex portion 421 located in the pattern region P _B , and the extending direction is indicated by the arrow X at a predetermined position. The direction has been changed. Accordingly, an L-shaped lead line as shown by a chain line in FIG. 24A is provided. FIG. 24B shows an extraction line extracted from FIG.

In a portion extending in the direction indicated by the arrow Y of the lead line, a plurality of convex portions 428 constituting the lead line are connected by a convex portion 428a. In the lead line portion extending in the arrow X direction, the short-axis convex part 428 ′ having a length corresponding to the width of the lead line is in the line axis direction of the other convex part 421 located in the pattern region P _B. It is arranged in the direction of the arrow X through the short-axis recess 429 'so as to be the same as (the direction indicated by the arrow Y), thereby forming a line and space structure. The line axis of such a short-axis convex part 428 ′ coincides with the line axis of the convex part 421 of the surrounding pattern region P _B , and there is a convex part between adjacent short-axis convex parts 428 ′ for lead lines. 428'a. Further, every other end 428′t of the short-axis convex portion 428 ′ is disposed so as to protrude from the adjacent end portion 428′t, and the end portion 428 of the short-axis convex portion 428 ′. 'T is located in a zigzag manner in the direction along the lead line extending in the arrow X direction. Similarly, the end portions 421t of the plurality of convex portions 421 in the pattern area P _B around the lead line are projected in the lead line direction from every other end portion 421t, so that the end of the convex portion 421 The part 421t is located in a zigzag manner in the direction along the lead line extending in the arrow X direction. And the convex part 428 'and the convex part 421 having a common line axis are opposed to each other with a boundary part having a desired width between the end part 428't and the end part 421t. Therefore, the gap between the end 428't of the convex portion 428 'and the end 421t of the convex portion 421 is located in a zigzag manner in the direction along the lead line extending in the arrow X direction. . The length of the gap (the length in the arrow Y direction) where the end 428't and the end 421t face each other may be uniform or different, and may be in the direction of the arrow X Can be set within a range in which the generation of the flow of droplets in the direction along the lead line extending in the direction can be inhibited, and can be set as appropriate within a range of 1 to 400 nm, for example.

The degree of zigzag at the end 428′t of the protrusion 428 ′ and the degree of zigzag at the end 421t of the protrusion 421 of the pattern area P _B around the lead line are determined by the protrusion of the pattern area P _A of the mold 301 described above. The degree of zigzag at the end 311t of 311 and the degree of zigzag at the end 321t of the convex part 321 of the pattern region P _B can be set. Further, the zigzag arrangement of the end portion 428′t of the convex portion 428 ′ and the zigzag arrangement of the end portion 421t of the convex portion 421 of the pattern area P _B around the lead line are not limited to the above-described embodiments. In the description of the mold 301, the embodiment illustrated in FIG.
By adopting a lead-and-space structure as described above, even in a portion where there is a lead-out line extending in a direction different from the line-axis direction, in the line-axis direction generated by the action of capillary force of the concavo-convex structure The influence of the flow of the droplets along the flow (the flow indicated by the arrow Y in FIG. 24) is suppressed. In the example shown in FIG. 24, the extension direction of the lead line is changed by 90 ° from the arrow Y direction to the arrow X direction at a predetermined position in the pattern region P _B. Even when the angle is changed by 60 °, the end of the convex portion can be zigzag similarly.

  Of the pattern areas of the concavo-convex structure areas of the molds 301, 301 ′, 401, 401 ′, among the pattern areas that have the concavo-convex structure that is a line-and-space structure and that are adjacent to each other along the line axis direction The position and number of pattern regions having a concavo-convex structure in which the end portions are zigzag as described above are such that the occurrence of defects is suppressed in imprinting using the molds 301, 301 ′, 401, 401 ′. Can be set to And such mold 301,301 ', 401,401' can be manufactured by the manufacturing method of the above-mentioned mold of this invention, for example.

[Pattern formation method]
Next, the pattern forming method of the present invention will be described.
FIG. 25 is a process diagram for explaining an embodiment of the pattern forming method of the present invention.
In the pattern forming method of the present invention, first, a master mold 501 is manufactured by the above-described mold manufacturing method of the present invention. Next, a resist droplet is supplied to a predetermined position on the mold base 602, the master mold 501 and the base 602 are brought close to each other, and the droplet is developed between the master mold 501 and the base 602. A resist layer 611 is formed (FIG. 25A).
The master mold 501 includes a concavo-convex structure 510 in a concavo-convex structure region set on one main surface of the substrate 502.
The mold base 602 includes a hard mask material layer 621 on the surface on which the resist layer 611 is formed. Examples of the hard mask material layer 621 include metals such as chromium, tantalum, aluminum, molybdenum, titanium, zirconium, and tungsten, alloys of these metals, metal oxides such as chromium oxide and titanium oxide, chromium nitride, and titanium nitride. It may be composed of one kind of a metal nitride, an intermetallic compound such as gallium arsenide, or a combination of two or more kinds. The material of the hard mask material layer 621 can be appropriately selected in consideration of the etching selection ratio with the base material 602 in the etching of the base material 602 in a later step. Note that the mold base 602 may not include the hard mask material layer 621.

The supply of resist droplets onto the mold substrate 602 can be performed by ink jet based on a desired drop map.
In the development of droplets between the master mold 501 and the base material 602, since the master mold 501 is manufactured by the mold manufacturing method of the present invention, the flow of droplets generated by the action of the capillary force of the concavo-convex structure is reduced. The influence is suppressed, and the concavo-convex structure 510 of the master mold 501 is reliably filled with droplets.
Next, the resist layer 611 is cured in a state where the master mold 501 and the base material 601 are brought close to each other, and then the hardened resist layer 611 and the master mold 501 are separated to form a resist on the hard mask material layer 621 of the base material 602. A pattern is formed, and the hard mask material layer 621 is etched through this resist pattern to form a hard mask 622 (FIG. 25B). Next, the base material 602 is etched through the hard mask 622 to manufacture a replica mold 601 (FIG. 25C). The replica mold 601 includes a concavo-convex structure 610 in which the concavo-convex structure 510 included in the master mold 501 is inverted.
Next, a droplet of the material to be transferred is supplied onto the transfer substrate 701, the transfer substrate 701 and the replica mold 601 are brought close to each other, and the droplet is developed between the replica mold 601 and the transfer substrate 701. A transfer material layer 711 is formed (FIG. 25D).
The material to be transferred may be a material having fluidity that can be imprinted, and examples thereof include a resin such as a photocurable resin, a thermoplastic resin, and a thermosetting resin. Such a material to be transferred can be supplied onto the transfer substrate 701 as a droplet by ink jet based on a desired drop map.

Since the replica mold 601 is manufactured by imprint lithography using the master mold 501 manufactured by the mold manufacturing method of the present invention, in the development of droplets between the replica mold 601 and the transfer substrate 701, The influence of the flow of droplets generated by the capillary force of the concavo-convex structure is suppressed, and the concavo-convex structure 610 of the replica mold 601 is surely filled with droplets.
Next, the transfer material layer 711 is cured in a state where the replica mold 601 and the transfer base material 701 are brought close to each other, and the cured transfer material layer 711 and the replica mold 601 are separated to form an uneven structure on the transfer base material 701. A pattern structure 712 having the structure is formed (FIG. 25E). The pattern structure 712 has an uneven structure in which the uneven structure 610 of the replica mold 601 is inverted.
The transfer material layer 711 is cured by irradiating light from the replica mold 601 side when the transfer material is photo-curable and the replica mold 601 can transmit irradiation light for curing them. it can. When the transfer base material 701 can transmit light, light irradiation may be performed from the transfer base material 701 side, and further, light irradiation may be performed from both the replica mold 601 side and the transfer base material 701 side. May be. When the transfer material is thermosetting or thermoplastic, the transfer material can be subjected to heat treatment or cooling (cooling) treatment, respectively.

  The transfer substrate 701 is etched through the pattern structure 712 formed as described above, so that a replica mold having a concavo-convex structure similar to the concavo-convex structure 510 included in the master mold 501 can be manufactured. In the pattern forming method of the present invention, it is possible to form a pattern having an uneven structure similar to that when the master mold 501 is used using such a replica mold. In addition, the base material provided with the hard mask material layer is used as the transfer base material 701, the hard mask material layer is etched through the pattern structure 712, and a hard mask is produced. 701 may be etched.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing a semiconductor device of the present invention will be described.
In the method of manufacturing a semiconductor device of the present invention, first, a resist layer is formed by applying an actinic radiation-sensitive resist on a mold substrate, and a semiconductor device having a desired concavo-convex structure based on temporary design pattern data Prepare a temporary mold for production.
Next, a resist droplet is supplied to a predetermined position on the substrate for manufacturing a semiconductor device, and a resist pattern is formed on the substrate for manufacturing a semiconductor device by imprinting using a temporary mold for manufacturing the semiconductor device. Etching is performed on the substrate for manufacturing a semiconductor device through the pattern to produce a temporary device having a pattern with a concavo-convex structure.

Next, detect the defect occurrence position of the pattern of the temporary device, take statistics of the detected defect occurrence position, and affect the wetting and spreading of the droplet from the statistical result of the defect occurrence position and the supply position of the resist droplet. The defect attraction pattern that causes the occurrence of the defect is identified.
Next, corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data is generated. Then, a mold for manufacturing a semiconductor device is manufactured based on the corrected design pattern data.
A semiconductor device can be manufactured by imprint lithography using the manufactured mold for manufacturing a semiconductor device. Further, such a semiconductor device manufacturing mold can be used as a master mold to manufacture a semiconductor device manufacturing replica mold, and a semiconductor device can be manufactured by imprint lithography using the replica mold.

DESCRIPTION OF SYMBOLS 1 ... Temporary master mold 2 ... Base material 3 ... Resist layer 6 ... Resist pattern 101 ... Temporary master mold 201 ... Temporary replica mold 301, 301 ', 401, 401' ... Mold 501 ... Master mold 601 ... Replica mold

Claims (6)

Applying a chemical radiation sensitive resist on the substrate to form a resist layer;
Irradiating a desired site of the resist layer with actinic radiation based on temporary design pattern data;
Developing the resist layer using a developer to form a resist pattern;
Etching the base material using the resist pattern to produce a temporary master mold having a pattern of concavo-convex structure formed in a plurality of regions ;
Detecting a defect occurrence position of the temporary master mold pattern;
Statistics of detected defect occurrence positions are taken, and if the difference in defect occurrence frequency (pieces / cm ² ) in an adjacent area exceeds a specific numerical value from the statistical result of the defect occurrence position, the boundary portion of the adjacent area concerned examine the pattern, and the case in developing of the resist layer is pattern to produce the flow of the developer in the direction along the boundary region, the defect becomes a cause of defects affect the flow of the developer attracted pattern Identifying process;
A step of generating corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data so that the end of the irradiation portion of the adjacent region is positioned in a zigzag manner along the boundary portion. When,
Producing a master mold based on the corrected design pattern data;
A method for producing an imprint mold, comprising: A step of preparing a temporary master mold including two or more pattern regions having at least a concavo-convex structure which is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel based on the temporary design pattern data;
Supplying resist droplets at predetermined positions on the substrate, and forming a resist pattern on the substrate by imprinting using the temporary master mold; and
Etching the base material using the resist pattern to produce a temporary replica mold having a pattern of concavo-convex structure;
Detecting a defect occurrence position of the temporary replica mold pattern;
The statistics of the detected defect occurrence position are taken, and the pattern near the boundary portion of the adjacent pattern area is examined from the statistical result of the defect occurrence position and the supply position of the droplet of the resist, and in the direction orthogonal to the line axis direction If a pattern that can occur a flow of droplets, and specifying a defect inducing pattern as a cause of the defect affects the spreading of the droplets,
Generating corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data so that an end of a line is positioned in a zigzag manner along a boundary between adjacent pattern regions ;
And a step of producing a master mold based on the corrected design pattern data. Applying a chemical radiation sensitive resist on a master mold substrate to form a resist layer;
Irradiating a desired site of the resist layer with actinic radiation based on temporary design pattern data;
Developing the resist layer using a developer to form a resist pattern;
Etching the base material using the resist pattern to produce a temporary master mold having a pattern of concavo-convex structure formed in a plurality of regions ;
Detecting a defect occurrence position of the temporary master mold pattern;
Statistics of detected defect occurrence positions are taken, and if the difference in defect occurrence frequency (pieces / cm ² ) in an adjacent area exceeds a specific numerical value from the statistical result of the defect occurrence position, the boundary portion of the adjacent area concerned examine the pattern, and the case in developing of the resist layer is pattern to produce the flow of the developer in the direction along the boundary region, the defect becomes a cause of defects affect the flow of the developer attracted pattern Identifying process;
A step of generating corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data so that the end of the irradiation portion of the adjacent region is positioned in a zigzag manner along the boundary portion. When,
Based on the correction design pattern data, producing a correction master mold including two or more pattern regions having at least a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel ;
Supplying resist droplets to a predetermined position on a replica mold substrate, and forming a resist pattern on the substrate by imprinting using the correction master mold; and
Etching the base material using the resist pattern to produce a temporary replica mold having a pattern of concavo-convex structure;
Detecting a defect occurrence position of the temporary replica mold pattern;
The statistics of the detected defect occurrence position are taken, and the pattern near the boundary portion of the adjacent pattern area is examined from the statistical result of the defect occurrence position and the supply position of the droplet of the resist, and in the direction orthogonal to the line axis direction If a pattern that can occur a flow of droplets, and specifying a defect inducing pattern as a cause of the defect affects the spreading of the droplets,
Generating recorrected design pattern data obtained by correcting the defect inducing pattern portion in the corrected design pattern data so that an end of a line is located in a zigzag direction along a boundary between adjacent pattern regions; and ,
And a step of producing a master mold based on the recorrected design pattern data.   Using a base material provided with a hard mask material layer as the base material, forming the resist pattern on the hard mask material layer, etching the hard mask material layer through the resist pattern to produce a hard mask, The method for producing an imprint mold according to any one of claims 1 to 3, wherein the pattern of the concavo-convex structure is produced by etching the base material through a hard mask. The process of producing the replica mold which has a concavo-convex structure by imprint lithography using the master mold produced by the manufacturing method of the imprint mold in any one of Claims 1 thru / or 4, and
A transfer substrate supplied with droplets of a material to be transferred is brought close to the replica mold, and the droplets are spread between the replica mold and the transfer substrate to form a material layer to be transferred, A pattern forming method comprising: curing a transfer material layer to transfer the concavo-convex structure, and then separating the cured transfer material layer from the replica mold. Preparing a temporary mold for manufacturing a semiconductor device comprising two or more pattern regions having at least a concavo-convex structure that is a line-and-space structure in which a plurality of lines and a plurality of spaces are arranged in parallel , based on the temporary design pattern data;
Supplying a droplet of a resist to a predetermined position on a semiconductor device manufacturing base material, and forming a resist pattern on the semiconductor device manufacturing base material by imprinting using the semiconductor device manufacturing temporary mold;
Etching the substrate for manufacturing a semiconductor device using the resist pattern, and producing a temporary device having a pattern of concavo-convex structure;
Detecting a defect occurrence position of the pattern of the temporary device;
The statistics of the detected defect occurrence position are taken, and the pattern of the concavo-convex structure, which is the line and space structure near the boundary portion of the adjacent pattern area , is obtained from the statistical result of the defect occurrence position and the supply position of the droplet of the resist. Inspecting and identifying a defect attraction pattern that affects the wetting and spreading of the droplet and causes the occurrence of a defect when it is a pattern that can cause a droplet flow in a direction perpendicular to the line axis direction ;
Generating corrected design pattern data obtained by correcting the defect attraction pattern portion in the temporary design pattern data so that an end of a line is positioned in a zigzag manner along a boundary between adjacent pattern regions ;
Forming a mold for manufacturing a semiconductor device based on the corrected design pattern data.

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