JP5032996B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device capable of operating a memory as a logic circuit.

  Conventionally, semiconductor devices such as LSI (Large Scale Integration) have been manufactured through many processes such as functional design, logic circuit design, wafer manufacturing, and assembly. The manufacturing process was suitable for mass production of the same product, but was not suitable for production of small quantities of many kinds of products because of the cost.

Therefore, a manufacturing technology such as FPGA (Field Programmable Gate Array) has been developed so that even if a large amount of a single semiconductor device is produced, it can be used as a separate product on the customer side. An FPGA is a semiconductor device such as an LSI that can be programmed with a logic circuit after being manufactured.
However, since the FPGA is composed of various parts such as logic circuits, wirings, and switches, there is a problem that a multilayer wiring structure having a number of wiring layers in a semiconductor process and a high-level manufacturing technique are required.

As one solution, a technique for operating a memory as a logic circuit has been developed.
For example, Patent Document 1 relates to a semiconductor device that operates as a logic circuit by writing a predetermined truth value in a memory so that a plurality of memories are connected by wiring and predetermined data is output in response to a predetermined address input. Is disclosed.

Patent Document 2 discloses a technique related to a semiconductor device that operates as a logic circuit by writing truth table data to a memory such as an SRAM (Static Random Access Memory), using an address as an input and an output as an output. Yes.
JP 2003-149300 A JP 2003-224468 A

However, the semiconductor device of Patent Document 1 has a problem in that when the truth value of the memory is rewritten, the wiring must be reconnected.
Further, in the semiconductor device of Patent Document 2, memory cell blocks in which a plurality of memory cells that store a predetermined amount of data are collected are arranged in an array, and data from one memory cell block includes four adjacent memory cell blocks. Since it is output only to two of them (for example, right and bottom of up, down, left and right), it is difficult to operate as a logic circuit that feeds back data (returns to the original memory cell block). Further, optimization of the scale (number of inputs and outputs) of the memory cell block has not been taken into consideration.

  Therefore, the present invention has been made in view of the above problems, and is a memory that operates as a logic circuit. Even if the truth value of the memory is rewritten, there is no need to reconnect wiring, and data is fed back. It is another object of the present invention to provide a semiconductor device in which the scale of the memory cell block is optimized.

In order to solve the above problems, a semiconductor device according to the present invention includes a plurality of memory cell blocks each including a plurality of memory cells that store a predetermined amount of data. Each memory cell block has three or more inputs and outputs, and includes two read address decoders for the memory cells, and outputs a desired logical value for a predetermined address input. The truth table data is stored in a memory cell and operates as a logic circuit. The memory cell has two read word lines corresponding to the two read address decoders. When both voltages of the two read word lines are applied, the memory cell holds the read word lines. Data is read from the read data line. Further, the memory cell blocks are connected such that three or more outputs from one memory cell block are input to three or more other memory cell blocks. The memory cell blocks are arranged in an array, and the output from each of the memory cell blocks in the rightmost column, the leftmost column, the uppermost row, and the lowermost row, Wiring for input to the memory cell block is provided, data is fed back, and the area of the memory cell to be operated is divided into two, and a specific address selection line in the read address decoder is switched Sometimes, the area of the memory cell to be operated is switched, and the operation as two types of logic circuits, or the operation as a logic circuit and the operation as a normal memory device are instantaneously switched and divided into two. Of the memory cell areas, when one area is operating as a logic circuit, the other area is for the next operation. The truth table data is written, and the specific address selection line is switched to perform the calculation by the other area, and the truth table data is written and the specific address selection line is switched to perform the calculation continuously. When the memory cell of the memory cell block does not store the truth table data, the memory cell block operates as a normal storage device.

  According to the present invention, the memory operates as a logic circuit, and even if the truth value of the memory is rewritten, it is not necessary to reconnect the wiring, the data can be fed back, and the scale of the memory cell block can be reduced. An optimized semiconductor device can be provided.

It is a block diagram of a semiconductor device and an information processing device. FIG. 2 is a configuration diagram of a memory cell that is a memory element configuring the semiconductor device 110 of FIG. 1. It is a block diagram of a memory cell block. 6 is a diagram showing a connection state of read ports in the semiconductor device 110. FIG. 2 is an internal structure diagram of a semiconductor device 110. FIG. It is a structural example of a 3-bit adder. (A) is a simplified diagram of the memory cell block 300, and (b) is a truth table stored in the memory cell blocks 300d, 300e, and 300f. (A) is a simplified diagram of the memory cell block 300, and (b) is a truth table stored in the memory cell blocks 300g, 300j, 300k, and 300l. (A) is a simplified diagram of the memory cell block 300, and (b) is a truth table stored in the memory cell blocks 300h and 300i. It is the figure which showed the connection condition of the read-out port in the semiconductor device 110a. It is an internal block diagram of the semiconductor device 110a. It is a flowchart which shows the flow of a process when mounting the bit data for operating as a logic circuit in a semiconductor device. It is a schematic diagram of the semiconductor device of the structure which can be operated continuously. It is the schematic which showed the structure of the large scale memory and the semiconductor device 110b. It is a flowchart which shows the flow of operation | movement in the semiconductor device 110b. It is the schematic of the semiconductor device of a modification. It is a block diagram of a semiconductor device using a flexible substrate. 1 is an overall configuration diagram of a semiconductor device that performs feedback of output by wire bonding. FIG. It is a block diagram of a tester or the like. (A) is a configuration diagram of a normal CMOS, (b) is a configuration diagram when the CMOS is separated, (c) is a configuration diagram of a NAND circuit using a normal CMOS, and (d) is a configuration of the NAND circuit of the present application. FIG. It is a block diagram of a semiconductor device etc. in the case of performing magnetic field connection.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Information processing device 110 Semiconductor device 200 Memory cell 201, 202 Read word line 211 Write word line 221, 222 Read data line 231, 232 Write data line 300 Memory cell block 301 Select line 311, 312 Read address decoder 401 Write / Read circuit 600,700,800 Truth table 1400 Large-scale memory 1900 Tester 2101,2111 Magnetic field detection unit 2102,2112 Magnetic field generation unit FL Flexible substrate

Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a configuration diagram of a semiconductor device and an information processing device. The information processing apparatus 100 is a computer device, and includes an input unit 101 such as a keyboard, a storage unit 102 such as a hard disk, a memory 103 such as a RAM (Random Access Memory), an output unit 104 such as a CRT (Cathode Ray Tube), and a communication device. And a processing unit 106 such as a CPU (Central Processing Unit).
Note that the bit data created by the information processing apparatus 100 (described later in step S1204 in FIG. 12) may be held in a ROM (Read Only Memory) (not shown).

  The semiconductor device 110 is connected to the communication unit 105 of the information processing apparatus 100. The semiconductor device 110 is a storage device similar to a normal SRAM (Static Random Access Memory) in terms of hardware, and will be described in detail later with reference to FIG.

  FIG. 2 is a configuration diagram of a memory cell which is a memory element constituting the semiconductor device 110 of FIG. Memory cell 200 includes read word lines 201 and 202, write word line 211, read data lines 221, 222, write data lines 231, 232, gates 241, 242, 251, 252, 261, 262, and flip-flop 271. It is prepared for.

  The gates 241, 242, 251, 252, 261, and 262 are configured by N-MOS (Negative-Metal Oxide Semiconductor). Instead, P-MOS (Positive-Metal Oxide Semiconductor) is used. It may be configured, and may be a composite gate of N-MOS and P-MOS. In that case, what is necessary is just to respond | correspond by changing a peripheral circuit suitably as needed. The gates 241 and 251 are so-called double gates, but a single gate may have the same function.

  The read word lines 201 and 202 are wirings to which a voltage is applied when data of the memory cell 200 is read from the outside. When the voltage of the read word line 201 is applied, the gates 241 and 242 are opened, and when the voltage of the read word line 202 is applied, the gates 251 and 252 are opened.

  The write word line 211 is a wiring to which a voltage is applied when data is written to the memory cell 200 from the outside. When the voltage of the write word line 211 is applied, the gate 261 and the gate 262 are opened.

  Read data lines 221 and 222 read data held in flip-flop 271 when a predetermined voltage is applied to read word line 201 and read word line 202 and gates 241, 242, 251 and 252 are opened. Wiring. When data “0” is read from read data line 221, data “1” is read from read data line 222, and when data “1” is read from read data line 221, data is read. Data “0” is read out from the data line 222, so-called differential signal operation is performed.

The write data lines 231 and 232 are wirings for writing data to the flip-flop 271 when the voltage of the write word line 211 is applied and the gates 261 and 262 are opened. When data “0” is written from the write data line 231, data “1” is written from the write data line 232, and when data “1” is written from the write data line 231, data is written from the write data line 232. "0" is written.
The flip-flop 271 is a storage circuit that holds “0” or “1” data stored in the memory cell 200 in the above sense.

FIG. 3 is a configuration diagram of a part of the memory cell block in the internal structure of the semiconductor device 110 of FIG.
The memory cell block 300 includes a plurality of memory cells 200 connected in line in an array, and read address decoders 311 and 312. Further, as described above, by providing the read address decoders 311 and 312 of the double read word lines 201 and 202 on the left and right sides, the wiring function described below can be provided.

  In the memory cell block 300, the outermost memory cell 200, that is, the upper side of the memory cell 200 (Cell31,0) and the memory cell 200 (Cell31,3), and the innermost memory cell 200, that is, the memory. Below the cell 200 (Cell0, 1) and the memory cell 200 (Cell0, 2), read data lines 221 and 222 are configured to be connected to another memory cell block 300 (not shown).

  In the memory cell block 300, the uppermost inner memory cell 200, that is, the upper side of the memory cell 200 (Cell31,1) and the memory cell 200 (Cell31,2), and the lowermost outer memory cell 200, that is, The read data lines 221 and 222 are cut off below the memory cell 200 (Cell0, 0) and the memory cell 200 (Cell0, 3).

  That is, in the memory cell block 300, the read data lines are configured such that the outer pairs are connected upward and the inner pairs are connected downward. By doing so, the scale of output (reading) of the memory cell block 300 can be minimized, the burden of various data processing can be reduced, and a plurality of outputs can be performed in a plurality of directions. it can.

In memory cell block 300, read address decoder 311 is arranged on the left side and receives a plurality of address differential signals from address input line 322. In memory cell block 300, read address decoder 312 is arranged on the right side, and receives a plurality of address differential signals from address input line 323.
In the claims, “three” or “four” in the number of inputs and outputs corresponds to the meaning of “three pairs” or “four pairs” in the case of differential signals.

  In the memory cell block 300, a plurality of read word lines 331 to 362 (in FIG. 2) are inputted by the inputs from the address input line 322, the address input line 323 and the select line (specific address selection line) 301. An arbitrary one can be selected from the corresponding read word line 202 and the voltage of the read word line can be applied.

The select line 301 is provided with an inverter 302. Further, the read address decoder 311 includes a plurality of logic circuits (AND (AND) circuit, NAND (NAND) circuit, etc.) 370. The write word line 371 (corresponding to the write word line 211 in FIG. 2) is connected to the write address decoder 411 (see FIG. 5).
Note that the logic circuit and the like of the read address decoder 312 are the same as those of the read address decoder 311, and therefore the description thereof is omitted (for example, the logic circuit 380 is connected to the read word line 381).

  As shown in FIG. 3, for example, when “1” is input from the select line 301, the upper half of the memory cell 200 in the memory cell block 300 operates and “0” is input from the select line 301. The lower half of the memory cell 200 in the memory cell block 300 operates.

  Therefore, for example, if the upper half of the memory cell 200 in the memory cell block 300 is set to operate as an adder and the lower half of the memory cell 200 is operated as a subtractor, only the signal from the select line 301 is switched. Instantaneous switching between adder and subtractor can be performed. Similarly, other than that, switching between an adder and a normal storage device can be performed.

  The whole and details of the memory cell block 300 have been described above. If the memory cell 200 has a configuration of 32 × 4 in this way, the read data lines 221 and 222 (see FIG. 2) can be shortened. The sense amplifier can be omitted, and the circuit can be simplified.

  FIG. 4 is a diagram showing a connection state of the read ports (each of the two upper and lower outputs of the read data line in FIG. 3 and two inputs from the address input lines 322 and 323) in the semiconductor device 110 (see FIG. 1). FIG. 4 illustrates a part of the upper left when the semiconductor device 110 is viewed in plan.

  In the memory cell blocks 300d to 300l, the input A0 (hereinafter referred to as “A0”: the same applies to A1 to A3) indicates the combination of A0 and / A0 in FIG. Is the same.

In the memory cell blocks 300d to 300l, the output D0 (hereinafter referred to as “D0”: D1 to D3 is also the same) is provided with two read data lines of the memory cell 200 (Cell31,0) of FIG. This is the same for D1 to D3.
A0 to A3 and D0 to D3 of memory cell blocks 300d to 300l are connected as shown in FIG.

  The driver circuit 420 converts a signal input from an external device to the device (semiconductor device 110) into a differential signal. The amplifier 430 amplifies and converts the input differential signal into a normal signal and outputs it to an external device.

  By using such a wiring, the semiconductor device 110 can easily perform data feedback. Specifically, for example, when data is sent from D3 of the memory cell block 300d to A1 of the memory cell block 300g, the memory cell block 300g outputs a truth value to the memory cell block 300g so that data input from A1 is output from D1. If the table is written, the data can be fed back to A3 of the memory cell block 300d.

Further, the semiconductor device 110 can be operated as various logic circuits only by changing the truth table written in the memory cell blocks 300d to 300l without changing the wiring.
Note that the number and condition of such wiring bends are not particularly limited to FIG. 4 and can be changed as appropriate.

  FIG. 5 is an internal structure diagram of the semiconductor device 110 (see FIG. 1). Each memory cell block 300 is arranged in an array, a write address decoder 411 is arranged on the left side, and a write / read circuit 401 is arranged on the lower side, and they are connected as shown in the figure. That is, FIG. 5 is a diagram illustrating a state other than the connection state of the read port in the semiconductor device 110 similar to FIG.

The write address decoder 411 is a device for specifying the x address of the memory cell block 300 (the vertical address of the semiconductor device 110 in FIG. 5) when writing data to the memory cell block 300.
In the write address decoder 411, the x address for specifying which one of the plurality of memory cell blocks 300 is an upper address (in this case, A5w, A6w,... After A4w). The x address for specifying the inside (memory cell 200) of the specified memory cell block 300 is input from the lower address (A0w to A3w in this case).

The write / read circuit 401 is a device that specifies the y address of the memory cell block 300 that reads / writes data, and that reads / writes data from / to the specified memory cell block 300.
Specifically, the write / read circuit 401 has a y address (a horizontal address of the semiconductor device 110 in FIG. 5) for specifying any one of the plurality of memory cell blocks 300. ) Is input (in this case, to Ayw2), and the y address for specifying the inside (memory cell 200) of the specified memory cell block 300 is input (in this case, to Ayw0 and Ayw1). The write / read circuit 401 receives data of a plurality of bits (in this case, 4 bits) from the input 402.

In this manner, the specific memory cell 200 in the specific memory cell block 300 can be selected as appropriate, and truth table data can be rewritten.
That is, when the truth table data stored in the memory cells 200 of some of the memory cell blocks 300 among the plurality of memory cell blocks 300 is rewritten, the semiconductor device 110 follows the rewritten truth table data. You can change the behavior.

Next, an example in which the semiconductor device 110 (see FIG. 4) is used as a 3-bit adder will be described with reference to FIGS.
FIG. 6 is a configuration example of a 3-bit adder. Connections between the memory cell blocks in FIG. 6 are the same as those in FIG.

  Here, a case will be described in which 3-bit two numbers E and F are added and the result is Y. The least significant bit of E is E0, the next bit is E1, and the most significant bit is E2. The least significant bit of F is F0, the next bit is F1, and the most significant bit is F2. Further, the least significant bit of Y is Y0, the next bit is Y1, and the most significant bit is Y2. Also, the carry by adding the least significant bit is C0, the carry by adding the next bit is C1, and the carry by adding the most significant bit is C2. Although each signal is differential, it is described in a simplified manner for the sake of description.

In the memory cell block 300d, A0 to E0, A1 to F0 are input, addition is performed, D3 to Y0 is output, and D2 to C0 is output.
In the memory cell block 300e, A0 to E1, A1 to F1 are inputted, A3 to C0 are inputted, addition is performed, Y3 is outputted from D3, and C1 is outputted from D2.
In the memory cell block 300f, A0 to E2, A1 to F2 are input, A3 to C1 are input, addition is performed, D3 to Y2 is output, and D2 to C2 are output.

Y0 output from D3 of the memory cell block 300d is output from D3 of the memory cell block 300j through a path as shown in the figure.
Y1 output from D3 of the memory cell block 300e is output from D3 of the memory cell block 300k through a path as shown in the figure.
Y2 output from D3 of the memory cell block 300f is output from D3 of the memory cell block 300l through a path as shown in the figure.
In this way, Y0, Y1, and Y2 that are addition results can be obtained.

7A is a simplified diagram of the memory cell block 300, and FIG. 7B is a truth table stored in the memory cell blocks 300d, 300e, and 300f (see FIG. 6 as appropriate).
As shown in FIG. 7A, in the memory cell block 300, when there are inputs to A0 to A3, data defined in the truth table is output from D0 to D3 according to the inputs.

  As shown in FIG. 7 (b), if there are inputs E (E0 to E2), F (F0 to F2), and Cin (C0 to C2) in A0, A1 and A3, the three addition results are as follows: The bit value is output to D3 as Y (Y0 to Y2), and the carry is output to D2 as Cout (C0 to C2).

Since D0 and D1 are not used here, “0” is output in all cases.
In addition, the truth values other than A2 are the same in the first to fourth stages and the fifth to eighth stages, and the ninth to twelfth stages and the thirteenth to sixteenth stages from the top. However, this is to ensure that an accurate output result can be obtained regardless of whether “0” or “1” is input to A2.

8A is a simplified diagram of the memory cell block 300, and FIG. 8B is a truth table stored in the memory cell blocks 300g, 300j, 300k, and 300l (see FIG. 6 as appropriate).
As shown in FIG. 8A, in the memory cell block 300, when there are inputs to A0 to A3, data defined in the truth table is output from D0 to D3 according to the inputs.

As shown in FIG. 8B, when Y (Y0 to Y2) is input to A1, the value is output to D3 as it is.
Since D0 to D2 are not used here, “0” is output in all cases.

  Actually, it is only necessary to have two kinds (two levels) of truth tables from A1 to D3, “0” → “0”, “1” → “1”, but A0, A2, A3 It is a 16-level truth table so that an accurate output result can be obtained regardless of whether “0” or “1” data is input.

9A is a simplified diagram of the memory cell block 300, and FIG. 9B is a truth table stored in the memory cell blocks 300h and 300i (see FIG. 6 as appropriate).
As shown in FIG. 9A, in the memory cell block 300, when there are inputs to A0 to A3, data defined in the truth table is output from D0 to D3 according to the inputs.

As shown in FIG. 9B, when C (C0 to C2) is input to A0, the value is output to D1 as it is. Also, if Y (Y0-Y2) is input to A1, the value is output to D3 as it is.
Since D0 and D2 are not used here, “0” is output in all cases.
Further, as in the case of FIG. 8B, an accurate output result can be obtained when any data of “0” and “1” is input to A2 and A3.

  FIG. 10 is a diagram illustrating a connection state of read ports in a semiconductor device 110a which is a modification of the semiconductor device 110 in FIG. In the semiconductor device 110a, compared to the memory cell blocks 300m to 300o in the leftmost column and the memory cell blocks 300s to 300u in the third column from the left, the memory cell blocks 300p to 300r in the middle column are arranged in the vertical direction. The memory cell blocks are shifted by half. Further, A0 to A3 and D0 to D3 of each memory cell block are connected as shown in the figure.

In this way, by arranging the memory cell blocks so as to be shifted, wirings input from D0 to D3 of each memory cell block to A0 to A3 of other memory cell blocks as compared with the semiconductor device 110 of FIG. Can be shortened.
Note that the number and condition of the bending of the wiring are not particularly limited to FIG. 10 and can be changed as appropriate.
Further, an internal configuration diagram of the semiconductor device 110a (corresponding to FIG. 5) is as shown in FIG.

  As described above, according to the semiconductor device of the present embodiment, in a memory that can operate as a logic circuit, data is easily fed back by providing an output from one memory cell block to four memory cell blocks. Can be done.

Further, in the manufacture of a conventional FPGA, for example, a C language program is created, and then HDL (Hardware Description Language) is created. Logic synthesis is performed from the HDL to create a logic circuit. From the logic circuit, logic arrangement and arrangement wiring are performed on the corresponding FPGA. In other words, a complicated and sophisticated work process was required.
On the other hand, since the semiconductor device of the present embodiment is a memory and a storage device, a C language program can be compiled and its data can be loaded as a truth value, so that the work process is simple and easy. In addition, since the semiconductor device of this embodiment is a memory device, even when different logic circuits are realized, it is only necessary to rewrite truth table data written in the memory cell 200 without changing the wiring.

  This will be described more specifically with reference to FIG. 12 (see FIG. 1 as appropriate). FIG. 12 is a flowchart showing a flow of processing when bit data for operating as a logic circuit is mounted on a semiconductor device.

First, the information processing apparatus 100 inputs a C language program describing a function to be realized from the input unit 101 (step S1201) and stores it in the storage unit 102.
Also, it is assumed that programs for various functions (addition, subtraction, etc.) are stored in the storage unit 102 in advance.

The operator of the information processing apparatus 100 adds a declaration sentence (Include sentence) using the input unit 101 in order to quote a necessary program among the programs stored in the storage unit 102 (step S1202).
The processing unit 106 creates a truth table (such as the truth table 600 in FIG. 7) based on the C language program to which the Include statement is added (step S1203), and creates bit data based on the truth table. Further, the bit data is mounted on the semiconductor device 110 via the communication unit 105 (step S1204) (step S1205).
Thus, according to the semiconductor device 110 of the present embodiment, the work for operating the semiconductor device 110 as a logic circuit can be simplified.

  Furthermore, according to the semiconductor device of the present embodiment, since an actual logic circuit is not used, even if a failure occurs in a part of the memory, the countermeasure (relief) can be taken by avoiding the use of that part. It can be done easily.

  If the number of word lines for one memory cell block is 32 as in this embodiment, the attenuation of data (signal) can be suppressed and the use of a sense amplifier can be eliminated. However, if importance is attached to the function of the semiconductor device, an intermediate buffer may be used for the read sense amplifier or the read data line, and the number of word lines may be 33 or more.

  Furthermore, according to the semiconductor device of this embodiment, it is possible to test another one memory by using a plurality of memories and putting a test program in some of them. Then, after the test is completed, by deleting the test program from the memory in which the test program is stored, these memories can be used as a normal memory.

  Further, a system LSI having a built-in memory performs self-test with the memory as the structure of the semiconductor device of the present embodiment, and configures a test logic circuit by writing a test program written in C language in that portion. Thus, other logic circuits in the system LSI can be tested.

Further, the connection between the memory cell blocks is not limited to the case where one memory cell block is connected to the other four memory cell blocks, and other three or more memory cell blocks that can perform data feedback. Other configurations may be connected.
Further, although the read data line is differential, wiring may be performed with only one read data line in consideration of the semiconductor layout and the logic circuit of the read address decoder.

Next, a semiconductor device having a structure that can be operated continuously will be described with reference to FIGS. FIG. 13 is a schematic diagram of a semiconductor device having such a configuration.
The semiconductor device 110b shown in FIG. 13 has a configuration in which the memory cell blocks 300 are arranged in an array, similar to the semiconductor device 110 of FIGS. 4 to 6, and is described more simply than FIG. is there. 4 differs from the semiconductor device 110 in FIG. 4 in that the latch circuit L for temporarily holding the outputs G1 to G8 from the memory cell block 300 in the rightmost column and the output held by those latch circuits L are the highest. This is the point that wirings 1301 to 1308 for returning to the memory cell block 300 in the left column are provided.

FIG. 14 is a schematic diagram showing the configuration of the large-scale memory and the semiconductor device 110b shown in FIG.
The large-scale memory 1400 is a recording device that records a C language program or the like, and can be realized by, for example, a ROM.
The semiconductor device 110b writes the truth table data (refer to the truth table 600 in FIG. 7) of the C language program from the large-scale memory 1400, the calculation based on the truth table data, and the feedback of the output (calculation result). The details will be described below with reference to FIG. 15 (refer to FIGS. 13 and 14 as appropriate).

FIG. 15 is a flowchart showing an operation flow in the semiconductor device 110b.
First, truth table data of the large-scale memory 1400 is written to the semiconductor device 110b (step S1501). Here, the truth table data of the large-scale memory 1400 is written in the upper half or the lower half of each memory cell block 300 of the semiconductor device 110b as described in FIG.

  If the next operation (operation based on the truth table data by each memory cell block 300) is not the last (No in step S1503), that is, the semiconductor device 110b is executed by the C language program in the large-scale memory 1400. When it is still necessary to calculate after the above calculation, the process proceeds to step S1505 and subsequent steps.

In step S1505, the truth table data is written from the large-scale memory 1400 to the half (upper half or lower half) of the half (upper half or lower half) of the memory cell block 300 of the semiconductor device 110b that will perform the operation.
In parallel with the process in step S1505, the processes in steps S1507 to S1511 are performed.

  That is, in the semiconductor device 110b, values (values given from the large-scale memory 1400 in the first calculation) are fed back from the latch circuit L in the second and subsequent calculations. Value) is input (step S1507), and calculation is performed using the upper half or the lower half of each memory cell block 300 in which the truth table data is written in step S1501 (step S1509), and the rightmost column in FIG. The calculated value is output from each memory cell block 300 (step S1511), and the process returns to step S1503.

  In step S1503, when the next operation to be performed is the last (Yes), that is, when the semiconductor device 110b does not need to perform an operation after the next operation by the C language program in the large-scale memory 1400, in steps S1513 to S1517. Then, the same processing as in steps S1507 to S1511 is performed, the output is sent as a calculation result to a predetermined device (not shown), and the processing ends.

  As described above, according to the semiconductor device 110b of FIG. 13, the calculation in the memory cell 200 of the upper half or the lower half (the switching is performed by the select line 301 of FIG. 3) in each memory cell block 300 is performed in parallel. By rewriting the truth table data of the half (the upper half or the lower half in each memory cell block 300) where the operation is not performed, and performing feedback of the output (calculation result), the operation can be performed continuously. The entire C language program recorded in the large-scale memory 1400 can be operated continuously.

Next, a modification of the semiconductor device that can operate continuously by performing feedback of the output (calculation result) will be described with reference to FIG. FIG. 16 is a schematic view of a semiconductor device according to the modification.
The semiconductor device 110c in FIG. 16 has substantially the same configuration as the semiconductor device 110b in FIG. 13, but the semiconductor device 110b in FIG. 13 outputs the output from the memory cell block 300 in the rightmost column to the memory cell block 300 in the leftmost column. The output from the memory cell block 300 in the rightmost column is input to the memory cell block 300 in the uppermost row for feedback, and the output from the memory cell block 300 in the lowermost row is compared. Is input to the memory cell block 300 in the leftmost column and feedback is applied. Thereby, the degree of freedom of the number of logic circuit stages can be increased as compared with the case of FIG.

In this way, a feedback path suitable for output can be selected and adopted according to the type of operation (addition, multiplication, etc.).
Although not particularly illustrated, the output from the memory cell block 300 in the lowermost row is output to the memory cell block 300 in the uppermost row in the semiconductor device 110 as in the semiconductor device 110b in FIG. 13 and FIG. 16 and the semiconductor device 110c. You may make it return by inputting.

Next, a semiconductor device using a flexible substrate will be described with reference to FIG. FIG. 17 is a configuration diagram of a semiconductor device using a flexible substrate.
The flexible substrate FL constituting the substrate of the semiconductor device 110d is made of a flexible organic semiconductor made of pentacene (an organic molecule in which five benzenes are ortho-condensed) or the like.
The semiconductor device 110d has a cylindrical shape so as to shorten the distance between each memory cell block 300 in the rightmost column and each memory cell block 300 in the leftmost column in the semiconductor device 110b in FIG. In addition, as in the case of the semiconductor device 110b, output feedback can be performed.

Next, a semiconductor device that performs output feedback by wire bonding will be described with reference to FIG. FIG. 18 is an overall configuration diagram of the semiconductor device and the like in that case.
As shown in FIG. 18, semiconductor devices 110 e and 110 f and large-scale memories 1400 e and 1400 f are attached to both sides of the substrate B. Signal transmission wires W1 to W4 are connected as shown in the figure.

  With such a configuration, the truth table data is written from the large scale memory 1400e to the semiconductor device 110e by the wire W4, the truth table data is written from the large scale memory 1400f to the semiconductor device 110f by the wire W3, and the semiconductor device The output can be returned between the wire 110e and the semiconductor device 110f by the wire W1 and the wire W2.

Next, a case where a semiconductor device is used for a tester will be described with reference to FIG. FIG. 19 is a configuration diagram of a tester and the like. The tester 1900 is a device for confirming the operation of the test target LSI 1910 (another semiconductor device).
The tester 1900 includes a large-scale memory 1400 (storage device), a semiconductor device 110, a driver 1901, a comparator 1902, and a processing unit 1903.

The driver 1901 is a drive circuit that transmits a signal based on a predetermined input value from the semiconductor device 110 to the test target LSI 1910.
The comparator 1902 compares the planned input value from the semiconductor device 110 with the output value from the test target LSI 1910.
The processing unit 1903 is a device that receives the output from the comparator 1902 and performs processing, and is realized by, for example, a CPU (Central Processing Unit).

Although not particularly illustrated, the tester 1900 includes a DC power supply, a timing generator, and the like as necessary.
In this manner, the semiconductor device 110 can be applied to the tester 1900.

  Next, a specific configuration of the logic circuit 370 in FIG. 3 will be described with reference to FIG. 20, (a) is a configuration diagram of a normal CMOS, (b) is a configuration diagram when the CMOS is separated, (c) is a configuration diagram of a NAND circuit using the normal CMOS, and (d) is a configuration diagram of the present application. It is a block diagram of a NAND circuit.

As shown in FIG. 20A, a normal CMOS 2000 is configured to include one P-MOS 2001 and one N-MOS 2002.
On the other hand, the isolated CMOS 2010 of FIG. 20B is different from the normal CMOS 2000 in that the right side (output portion) of the P-MOS 2011 and the N-MOS 2012 is separated.

  Also, the logic circuit 370 (NAND circuit, etc.) in FIG. 3 can be configured as shown in FIG. A, B and C are input contacts, and the P-MOSs 2021, 2031 and 2041 and the N-MOSs 2022, 2032 and 2042 are connected as shown in the figure.

  On the other hand, the logic circuit 370 (NAND circuit) in FIG. 3 can be configured as shown in FIG. A, B, and C are input contacts, and N-MOSs 2052, 2062, and 2072 are connected as shown in the figure.

  In this manner, the logic circuit 370 (NAND circuit) in FIG. 3 is configured as shown in FIG. 20D, so that the number of transistors (P-MOS, N-MOS) can be set as shown in FIG. Compared to the above, the area can be reduced to half, and the area and volume per memory cell block 300 can be reduced.

Next, a case where feedback of the output of the semiconductor device is performed by magnetic field connection will be described with reference to FIG. FIG. 21 is a configuration diagram of a semiconductor device or the like when performing magnetic field connection.
As shown in FIG. 21, semiconductor devices 110h, 110i,... Are arranged inside a case 2100 with a substrate B interposed therebetween.

  In addition, on the left and right sides of the semiconductor devices 110h and 110i, magnetic field detection units 2101 and 2111 and magnetic field generation units 2102 and 2112 configured by coils, transistors, and the like are provided. The magnetic field detection unit 2111 receives the magnetic field generated by the magnetic field generation unit 2102, and the magnetic field detection unit 2101 receives the magnetic field generated by the magnetic field generation unit 2112, thereby performing output feedback between the semiconductor devices 110h and 110i. Can do.

  As described above, by using the magnetic field connection between the magnetic field generation unit and the magnetic field detection unit, feedback of the output in the semiconductor device 110 can be performed without being troubled by the trouble of wiring and space.

This is the end of the description of the embodiments, but the aspects of the present invention are not limited to these.
For example, the semiconductor device of the present invention may be realized using a DRAM (Dynamic Random Access Memory) or a flash memory instead of the SRAM.
Further, it does not limit the mounting of functions such as a precharge function for improving performance in the memory.
In addition, it can change suitably in the range which does not deviate from the meaning of this invention.

Claims (11)

A semiconductor device having a plurality of memory cell blocks each including a plurality of memory cells for storing a predetermined amount of data,
Each of the memory cell blocks has three or more inputs and outputs, and internally includes two read address decoders for the memory cells for outputting a desired logical value for a predetermined address input. Storing truth table data in the memory cell, and configured to operate as a logic circuit;
The memory cell has two read word lines corresponding to the two read address decoders. When both voltages of the two read word lines are applied, the memory cell holds at that time. Data is read from the read data line,
The memory cell blocks are connected such that three or more outputs from one memory cell block are input to three or more other memory cell blocks;
The memory cell block includes:
Arranged in the form of an array, the output from each of the memory cell blocks in the rightmost column, the leftmost column, the uppermost row and the lowermost row is input to any one of the other memory cell blocks. Wiring is provided, data is returned, and
The area of the memory cell that operates is divided into two parts,
When a specific address selection line in the read address decoder is switched, the area of the memory cell to be operated is switched to operate as two types of logic circuits, or as a logic circuit and a normal storage device. Any one of the
Of the memory cell area divided in two,
When one area is operating as a logic circuit, the other area is written with truth table data for the next operation,
By switching the specific address selection line, the calculation is performed by the other area, and the calculation is continuously performed by writing the truth table data and switching the specific address selection line.
When the memory cell of the memory cell block does not store the truth table data, the semiconductor device operates as a normal storage device. The memory cell block has four inputs and four outputs,
The semiconductor device according to claim 1 , wherein the memory cell blocks are connected such that four outputs from one memory cell block are input to four other memory cell blocks. The plurality of memory cell blocks each have a rectangular shape with the same size, and the memory cell blocks are connected to each other by disposing at least a part from the array arrangement. The semiconductor device according to claim 1 . The semiconductor device according to claim 1 , further comprising:
A write address decoder connected to a plurality of the memory cell blocks and designating an x address for the plurality of memory cell blocks and the memory cells therein;
A write / read circuit connected to the plurality of memory cell blocks, designating a plurality of memory cell blocks and y-addresses related to the memory cells therein, and writing data to the memory cells;
When the memory cell is designated by the write address decoder and the write / read circuit, data is written by the write / read circuit. When the truth table data stored in the memory cells of some of the memory cell blocks among the plurality of the memory cell blocks is rewritten,
2. The semiconductor device according to claim 1 , wherein the operation is changed in accordance with the rewritten truth table data. The semiconductor device according to claim 1 constituting a system LSI,
A semiconductor device characterized by self-testing and testing another logic circuit in the system LSI. 2. The semiconductor device according to claim 1 , wherein a flexible flexible substrate is used as the substrate, and the flexible substrate is bent to shorten the distance of wiring for returning data. One said semiconductor device on both sides of the substrate provided, the semiconductor device according to claim 1, characterized in that the feedback data by wire bonding. Used in the tester performing the operation check of the other semiconductor device, claims and executes the test program based on the test program for the operation check of the storage device provided in the tester stores Item 14. The semiconductor device according to Item 1 . The read address decoder has a plurality of logic circuits,
2. The semiconductor device according to claim 1 , wherein the transistors used in the plurality of logic circuits are N-MOS. A plurality of the semiconductor devices according to claim 1 are provided,
Each of the semiconductor devices includes a magnetic field generation unit that generates a magnetic field, and a magnetic field detection unit that detects the magnetic field,
Data feedback is performed by generating a magnetic field by a magnetic field generation unit based on an output from the memory cell block of any one of the semiconductor devices, and detecting the magnetic field by the magnetic field detection unit of any other semiconductor device. A semiconductor device comprising:

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