JP5008266B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5008266B2
JP5008266B2 JP2005085530A JP2005085530A JP5008266B2 JP 5008266 B2 JP5008266 B2 JP 5008266B2 JP 2005085530 A JP2005085530 A JP 2005085530A JP 2005085530 A JP2005085530 A JP 2005085530A JP 5008266 B2 JP5008266 B2 JP 5008266B2
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JP
Japan
Prior art keywords
film
semiconductor
substrate
insulating film
laser
Prior art date
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Expired - Fee Related
Application number
JP2005085530A
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English (en)
Japanese (ja)
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JP2005311342A5 (zh
JP2005311342A (ja
Inventor
純矢 丸山
敦生 磯部
奨 岡崎
幸一郎 田中
良明 山本
浩二 大力
友子 田村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005085530A priority Critical patent/JP5008266B2/ja
Publication of JP2005311342A publication Critical patent/JP2005311342A/ja
Publication of JP2005311342A5 publication Critical patent/JP2005311342A5/ja
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Publication of JP5008266B2 publication Critical patent/JP5008266B2/ja
Expired - Fee Related legal-status Critical Current
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005085530A 2004-03-25 2005-03-24 半導体装置の作製方法 Expired - Fee Related JP5008266B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005085530A JP5008266B2 (ja) 2004-03-25 2005-03-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004088613 2004-03-25
JP2004088613 2004-03-25
JP2005085530A JP5008266B2 (ja) 2004-03-25 2005-03-24 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005311342A JP2005311342A (ja) 2005-11-04
JP2005311342A5 JP2005311342A5 (zh) 2008-04-10
JP5008266B2 true JP5008266B2 (ja) 2012-08-22

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ID=35439690

Family Applications (1)

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JP2005085530A Expired - Fee Related JP5008266B2 (ja) 2004-03-25 2005-03-24 半導体装置の作製方法

Country Status (1)

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JP (1) JP5008266B2 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989304B2 (en) * 2006-03-28 2011-08-02 Sharp Kabushiki Kaisha Method for transferring semiconductor element, method for manufacturing semiconductor device, and semiconductor device
JP5460108B2 (ja) 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法

Also Published As

Publication number Publication date
JP2005311342A (ja) 2005-11-04

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