JP4999278B2 - 窒化ガリウム系化合物半導体発光素子 - Google Patents

窒化ガリウム系化合物半導体発光素子 Download PDF

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Publication number
JP4999278B2
JP4999278B2 JP2005048298A JP2005048298A JP4999278B2 JP 4999278 B2 JP4999278 B2 JP 4999278B2 JP 2005048298 A JP2005048298 A JP 2005048298A JP 2005048298 A JP2005048298 A JP 2005048298A JP 4999278 B2 JP4999278 B2 JP 4999278B2
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Prior art keywords
layer
gallium nitride
compound semiconductor
contact
metal
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Japanese (ja)
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JP2005277403A (ja
JP2005277403A5 (enExample
Inventor
宏二 亀井
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Resonac Holdings Corp
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Showa Denko KK
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JP2005048298A 2004-02-24 2005-02-24 窒化ガリウム系化合物半導体発光素子 Expired - Lifetime JP4999278B2 (ja)

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JP2005048298A JP4999278B2 (ja) 2004-02-24 2005-02-24 窒化ガリウム系化合物半導体発光素子

Applications Claiming Priority (3)

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JP2004048538 2004-02-24
JP2004048538 2004-02-24
JP2005048298A JP4999278B2 (ja) 2004-02-24 2005-02-24 窒化ガリウム系化合物半導体発光素子

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JP2005277403A JP2005277403A (ja) 2005-10-06
JP2005277403A5 JP2005277403A5 (enExample) 2008-02-21
JP4999278B2 true JP4999278B2 (ja) 2012-08-15

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JP2005048298A Expired - Lifetime JP4999278B2 (ja) 2004-02-24 2005-02-24 窒化ガリウム系化合物半導体発光素子

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100662191B1 (ko) 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2011146639A (ja) 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物系半導体素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JP3365607B2 (ja) * 1997-04-25 2003-01-14 シャープ株式会社 ＧａＮ系化合物半導体装置及びその製造方法
JPH11220168A (ja) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子及びその製造方法
JP2000058911A (ja) * 1998-08-13 2000-02-25 Toshiba Corp 半導体発光装置
JP3795298B2 (ja) * 2000-03-31 2006-07-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4167833B2 (ja) * 2002-01-24 2008-10-22 株式会社ユーテック 成膜装置、酸化物薄膜成膜用基板及びその製造方法

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JP2005277403A (ja) 2005-10-06

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