JP4989929B2 - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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Publication number
JP4989929B2
JP4989929B2 JP2006181572A JP2006181572A JP4989929B2 JP 4989929 B2 JP4989929 B2 JP 4989929B2 JP 2006181572 A JP2006181572 A JP 2006181572A JP 2006181572 A JP2006181572 A JP 2006181572A JP 4989929 B2 JP4989929 B2 JP 4989929B2
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lead frame
optical semiconductor
resin
bonding
bonding wire
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JP2008010740A (en
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裕之 加納
亮介 近藤
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スタンレー電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Description

  The present invention relates to an optical semiconductor device, and more particularly to an optical semiconductor device using a semiconductor light emitting element as a light source or a semiconductor light receiving element as a light receiving source.

  As a typical example, an optical semiconductor device using a semiconductor light emitting element as a light source has been proposed as shown in FIG. That is, an LED chip 51 is mounted on one end face of a pair of lead frames 50a and 50b via a conductive bonding member (not shown) such as solder, conductive adhesive, etc. Electrical connection with the lead frame 50a on which the LED chip 51 is mounted is achieved, and the other end of the bonding wire 52 having one end connected to the other electrode of the LED chip 51 (first bonding) is connected to the LED. A lead frame 50b in which the other electrode of the LED chip 51 and the bonding wire 52 are connected by connecting (2nd bonding) to the end surface of the other lead frame 50b separated and independent from the lead frame 50a on which the chip 51 is mounted. Are electrically connected to each other through a bonding wire 52.

  In this case, 1st bonding of the bonding wire 52 is ball bonding, 2nd bonding is wedge bonding, and 1st bonding means ball bonding and 2nd bonding is wedge bonding.

  Then, the LED chip 51, the bonding wire 52, and the lead frames 50a and 50b in the vicinity where they are mounted and wired are sealed with a sealing resin 53 made of a translucent resin. In this case, the sealing resin 53 protects the LED chip 51 from an external environment such as moisture, dust, and gas, and protects the bonding wire 52 from mechanical stress such as vibration and impact. Further, by forming an interface between the light emitting surface of the LED chip 51 and the sealing resin 53 having a refractive index close to that of the semiconductor material forming the light emitting surface of the LED chip 51, light emission from the LED chip 51 is sealed. The light is efficiently emitted into the resin 53.

  The optical semiconductor device 54 having such a configuration is mounted on the printed board 55 together with other electronic components by the method shown in FIG. This mounting is performed by an automatic mounting machine (inserter). After inserting the lead frames 50a and 50b into the through holes 56 provided in the printed circuit board 55, the surface opposite to the component mounting surface (component surface) of the printed circuit board 55 (solder surface) The excess lead frame is cut from the side), and the tip portions 50a ′ and 50b ′ are clinched to temporarily fix the optical semiconductor device 54 to the printed circuit board 55.

  Then, the tips of the lead frames 50a and 50b of the optical semiconductor device 54 are immersed by immersing the solder surface side of the printed circuit board 55 in the flow solder ejected from the solder dip tank. The portions 50a ′ and 50b ′ and a circuit pattern provided on the surface of the printed circuit board 55 are soldered to achieve electrical conduction.

  At this time, as shown in FIG. 15, the bending residual stress of the lead frames 50a and 50b generated when the lead frames 50a and 50b are clinched is caused by the lead frames 50a and 50a made of sealing resin for sealing the lead frames 50a and 50b. The vicinity of 50b is released by being softened by the soldering heat at the time of mounting the optical semiconductor device. Therefore, as shown in FIG. 16, in the sealing resin of the lead frame 50b on the side where the 2nd bonding of the bonding wire 52 is performed. The portion located in the position is displaced, and the disconnection of the bonding wire 52 is induced.

  As shown in FIG. 17, the tensile stress of the lead frame due to the thermal expansion of the printed circuit board that occurs when the printed circuit board on which the optical semiconductor device is temporarily fixed is soldered is applied to the lead frames 50a and 50b as described above. The vicinity of the lead frames 50a and 50b of the sealing resin to be sealed is released by being softened by the soldering heat at the time of mounting the optical semiconductor device. Therefore, as shown in FIG. 18, especially the 2nd bonding of the bonding wire 52 is performed. The lead frame 50b on the other side is displaced, and the disconnection of the bonding wire 52 is induced.

  Both the bending residual stress and the tensile stress of the lead frames 50a and 50b become larger as the resin-sealed portions of the lead frames 50a and 50b become longer. For this reason, in particular, the lead frame 50b on the side where the 2nd bonding of the bonding wire 52 is performed. As the amount of displacement increases, disconnection of the bonding wire 52 is likely to occur.

  Further, as shown in FIG. 19, bonding is caused by heat generated when the printed circuit board on which the optical semiconductor device is temporarily fixed is solder-flowed and intermittent temperature changes due to repeated flashing after the optical semiconductor device is mounted on the printed circuit board. The resin stress received by the bonding wire 52 changes due to the difference in thermal expansion coefficient between the wire 52 and the sealing resin that seals the bonding wire 52. As shown in FIG. 20, the bonding wire 52 is disconnected and the bonding wire 52 is bonded. Peeling from the part occurs and causes electrical failure.

  The cause of these problems is due to the fact that the 2nd bonding (wedge bonding) of the bonding wire applied to the lead frame is weaker than the first bonding (ball bonding) applied to the upper electrode of the LED chip. The element is big.

  Therefore, the following optical semiconductor devices have been proposed as means for solving the above problems. This is because the lead frame is formed of a metal material having a lower thermal conductivity than an iron material generally used as a lead frame, so that the 2nd of the bonding wire of the lead frame when the optical semiconductor device is solder mounted on the printed circuit board. The bonding portion is suppressed so as not to exceed the heat resistance temperature of the sealing resin, and the sealing resin in the vicinity of the 2nd bonding portion of the bonding wire of the lead frame is prevented from being softened (for example, Patent Documents). 1).

Also, a moving resistance portion is provided in the resin-sealed portion of the lead frame on which the LED chip is mounted and / or the lead frame to which the 2nd bonding of the bonding wire is applied, and the lead is used when the optical semiconductor device is solder-mounted on the printed circuit board. In some cases, the bonding between each lead frame and the sealing resin is strengthened so that each lead frame does not move even if the sealing resin in the vicinity of the LED mounting portion of the frame and / or the 2nd bonding portion of the bonding wire softens ( For example, see Patent Document 2.)
JP 2001-57443 A JP 2001-24237 A

  By the way, any of the above-mentioned proposals for bonding wire breakage has the following problems. First, the lead frame on the side on which the LED chip is mounted is for accommodating a conductive bonding member such as solder or conductive adhesive for mounting the LED chip, the mounted LED chip and the LED chip. A large inverted frustoconical cup portion is provided, so that the heat capacity is relatively large, so that heat when mounting the optical semiconductor device on the printed circuit board does not easily reach the LED chip mounting portion of the lead frame. The sealing resin in the vicinity of the LED chip mounting portion of the frame is held hard.

  On the other hand, since the lead frame on the bonding wire 2nd bonding side has a small heat capacity, heat when mounting the optical semiconductor device on the printed circuit board easily reaches the 2nd bonding portion of the bonding wire of the lead frame. Since the sealing resin near the bonding portion of the bonding wire 2nd is softened, it is easily affected by stress.

  In addition, the stress in the direction substantially perpendicular to the longitudinal direction of the lead frame that the lead frame receives due to heat when the optical semiconductor device is mounted on the printed circuit board is 2nd of the lead frame and the bonding wire on the side where the LED chip is mounted. There is almost no difference between the lead frames on the bonded side. On the other hand, the stress in the longitudinal direction of the lead frame received by the lead frame is also almost the same between the lead frame on the side where the LED chip is mounted and the lead frame on which the 2nd bonding of the bonding wire is performed. The lead frame on the side on which the 2nd bonding of the bonding wire is performed has a smaller holding force and a larger amount of displacement than the lead frame on the side on which the LED chip is mounted because there is no cup portion.

  Furthermore, the contact area between the lead frame and the sealing resin that seals the lead frame is larger for the lead frame on the side where the 2nd bonding of the bonding wire is performed than for the lead frame on which the LED chip is mounted. From this point, the holding force is small and the amount of displacement is large.

  Accordingly, the present invention was devised in view of the above problems, and an object of the present invention is to provide an optical semiconductor device with high electrical reliability in which disconnection of a bonding wire wired in a sealing resin is reduced. There is to do.

In order to solve the above-mentioned problems, an invention described in claim 1 of the present invention includes an optical semiconductor element having a pair of electrodes, a first lead frame on which the optical semiconductor element is mounted, and the first A second lead frame formed separately from the lead frame; a bonding wire having one end connected to one electrode of the optical semiconductor element; the optical semiconductor element; the bonding wire; An optical semiconductor device having a first lead frame and a first sealing resin covering a part of the second lead frame, the other end of the bonding wire being formed on the second lead frame Connected to the second lead frame recess, the second lead frame recess is filled with a second sealing resin made of a soft resin, and the inner bottom surface of the second lead frame recess and the Connection of the down loading wire is covered with the second sealing resin, the first sealing resin, an epoxy resin of hardness D87~92, the second sealing resin, the hardness D20~ It consists of 30 silicone resins .

According to a second aspect of the present invention, in the first aspect, the optical semiconductor element is mounted in a first lead frame recess formed in the first lead frame , and the first The lead frame recess is filled with the second sealing resin, and a connecting portion between the optical semiconductor element and the bonding wire is covered with the second sealing resin .

According to a third aspect of the present invention, in the first or second aspect, the first lead frame and the second lead frame are provided in parallel, and the first sealing resin is And a resin bottom surface from which the first lead frame and the second lead frame are led out, a distance from the resin bottom surface to a connection portion between the optical semiconductor element and the bonding wire, and from the resin bottom surface. The distance between the bottom surface of the second lead frame recess and the connecting portion between the bonding wires is different from each other.

According to a fourth aspect of the present invention, in the third aspect , the distance from the resin bottom surface to the connecting portion between the optical semiconductor element and the bonding wire is the second lead frame from the resin bottom surface. It is characterized by being longer than the distance between the bottom surface of the recess and the connecting portion between the bonding wires.

According to a fifth aspect of the present invention, in the first or second aspect , the first lead frame and the second lead frame are led out from a bottom surface of the first sealing resin. It is characterized by this.

According to a sixth aspect of the present invention, in the second aspect, the second lead frame concave portion is smaller than the first lead frame concave portion.

  In the optical semiconductor device of the present invention, a recess having an opening is formed at one end of each of a plurality of lead frames arranged in parallel, and an optical semiconductor element is provided on the inner bottom surface of at least one of the recesses. The lead which is mounted and separated and independent of the lead frame having the concave portion on which the optical semiconductor element is mounted at the other end of the bonding wire having one end connected to the upper electrode of the optical semiconductor element It connected to the inner bottom face of the recessed part formed in the flame | frame, and the recessed part side edge part of each said lead frame was integrally resin-sealed with sealing resin which consists of translucent resin.

  As a result, it was possible to provide an optical semiconductor device with high electrical reliability in which disconnection of the bonding wire wired in the sealing resin was reduced.

  An object of the present invention is to provide an optical semiconductor device with high electrical reliability in which disconnection of bonding wires wired in a sealing resin is reduced, and one end of each of a plurality of lead frames provided in parallel. The other of the bonding wires in which a recess having an opening is formed, an optical semiconductor element is mounted on the inner bottom surface of at least one of the recesses, and one end is connected to the upper electrode of the optical semiconductor element Is connected to the inner bottom surface of the recess formed in the lead frame that is separated and independent from the lead frame having the recess on which the optical semiconductor element is mounted, and the recess side end of each lead frame is transparently connected. This was realized by integrally sealing with a sealing resin made of a light resin.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 12 (the same parts are given the same reference numerals). In addition, since the Example described below is a suitable specific example of this invention, various technically preferable restrictions are attached | subjected, The range of this invention limits this invention especially in the following description. As long as there is no description of that, it is not restricted to these Examples.

  FIG. 1 is a cross-sectional view of a first embodiment relating to the optical semiconductor device of the present invention, and FIG. 2 is an enlarged view of a portion A in FIG.

  Concave portions 2a and 2b, which are recessed in an inverted truncated cone shape, are formed at one end of each of the pair of lead frames 1a and 1b arranged in parallel, and the respective concave portions 2a and 2b are different in size and inside. The bottom surfaces 3a and 3b are both perpendicular to the longitudinal direction of the lead frames 1a and 1b and are located at different positions with respect to the longitudinal direction of the lead frames 1a and 1b.

  The inner bottom surface 3a of the larger one of the two recesses 2a and 2b formed at the end of one lead frame 1a has a conductive joining member such as solder or conductive adhesive (see FIG. The optical semiconductor element 4 is placed via a lead frame 1a having a bottom electrode 3a on which the lower electrode of the optical semiconductor element 4 and the concave portion 2a on which the optical semiconductor element is placed serves as a conductive bonding member. Are electrically connected to each other.

  Also, the other end of the bonding wire 6 in which one end is first bonded to the upper electrode of the optical semiconductor element 4 to form the ball bonding part 5 is the lead frame 1a on which the optical semiconductor element 4 is mounted. Are bonded to the inner bottom surface 3b of the smaller one of the two recesses 2a, 2b formed at the end of the other lead frame 1b, thereby forming a wedge bonding part 7, and the optical semiconductor element 4 The lead frame 1 b having the inner bottom surface 3 b of the recess 2 b in which the wedge bonding portion 7 of the bonding wire 6 is formed is electrically connected to the upper electrode of the bonding wire 6 through the bonding wire 6.

  Furthermore, the optical semiconductor element 4, the bonding wire 6 and the lead frames 1a and 1b in the vicinity where they are mounted and wired, respectively, are sealed with a sealing resin 8 made of a translucent resin, At the same time, a convex lens surface 9 made of the sealing resin 8 is formed on the optical axis in the light emitting direction of the optical semiconductor element 4.

  The optical semiconductor element 4 is either a light emitting element or a light receiving element, and an element such as an LED is used for the light emitting element, and a photodiode, a phototransistor or the like is used for the light receiving element.

  The sealing resin 8 protects the optical semiconductor element 4 from the external environment such as moisture, dust and gas as well as the bonding wire 6 from mechanical stresses such as vibration and impact as described in the above “Background Art”. To do. Further, when the optical semiconductor element 4 is a light emitting element, by forming an interface between the light emitting surface of the light emitting element and the sealing resin 8 having a refractive index close to the semiconductor material forming the light emitting surface of the light emitting element, Light emitted from the light emitting element is efficiently emitted into the sealing resin 8.

  In this case, the mutual positional relationship between the inner bottom surface 3a of the recess 2a where the optical semiconductor element 4 is placed and the inner bottom surface 3b of the recess 2b where the wedge bonding portion 7 of the bonding wire 6 is formed, and the bottom surface of the sealing resin (sealing) The distance from the surface (the surface facing the lens surface on the outer periphery of the stop resin) 11 to the connection portion formed on the inner bottom surface 3b of the concave portion 2b of the lead frame 1b on the side where the wedge bonding portion 7 is formed is as follows. is there.

  First, the mutual positional relationship between the inner bottom surface 3a of the concave portion 2a on which the optical semiconductor element 4 is placed and the inner bottom surface 3b of the concave portion 2b on which the wedge bonding portion 7 of the bonding wire 6 is formed is the concave portion in which the wedge bonding portion 7 is formed. The inner bottom surface 3b of 2b is located on the light emitting direction side (lens surface side) of the optical semiconductor element 4 with respect to the inner bottom surface 3a of the recess 2a on which the optical semiconductor element 4 is mounted.

  Further, it is formed on the inner bottom surface 3b of the recess 2b of the lead frame 1b on the side where the wedge bonding portion 7 of the bonding wire 6 is formed from the bottom surface 11 of the sealing resin 8 (the surface facing the lens surface in the sealing resin). The distance to the connection part (wedge bonding part 7) is the connection part on the optical semiconductor element 4 mounted on the recess 2a of the lead frame 1a on the side where the optical semiconductor element 4 is mounted from the bottom surface 11 of the sealing resin. Although it is longer than the distance to (ball bonding part 5), it is shorter than the conventional optical semiconductor device shown in FIG. That is, the length of the resin-sealed portion of the lead frame 1b on the side where the wedge bonding portion 7 of the bonding wire 6 is formed is shorter than that of the conventional example.

  The present embodiment having the above-described configuration has the following effects. First, the wedge bonding portion 7 by 2nd bonding of the bonding wire 6 is formed on the inner bottom surface 3b of the recess 2b of the lead frame 1b. For this reason, the resin stress due to heat when the optical semiconductor device is mounted on the printed circuit board received by the vicinity including the wedge bonding portion of the bonding wire 6 and intermittent temperature due to repeated flashing after the optical semiconductor device is mounted on the printed circuit board. The change in the resin stress due to the change is largely caused by the sealing resin 8 located in the portion surrounded by the inner peripheral surface of the recess 2a surrounding the wedge bonding portion 7.

  Therefore, as compared with the volume of the sealing resin that causes stress and stress change applied to the wedge bonding portion 7 provided in the flat portion having no enclosure as in the conventional example, the concave portion surrounded by the inner peripheral surface as in this embodiment. The stress applied to the wedge bonding part 7 provided in 2b and the volume of the sealing resin 8 that causes the stress change are smaller. Therefore, in this embodiment, the resin stress received by the wedge bonding portion is reduced, the disconnection of the bonding wire 6 is also suppressed, and the electrical reliability is improved.

  Further, by reducing the distance from the bottom surface 11 of the sealing resin 8 (the surface facing the lens surface in the sealing resin) 11 to the wedge bonding portion 7 as compared with the conventional example, the lead frame 1b including the wedge bonding portion 7 is reduced. The length of the resin-sealed portion is shortened to reduce the resin stress received by the wedge bonding portion.

  Further, similarly to the lead frame 1a on the side where the optical semiconductor element is placed, the lead frame 1b on the side where the wedge bonding part 7 of the bonding wire 6 is formed also has a recess 2b recessed in an inverted truncated cone shape. Yes. Therefore, the heat capacity of the lead frame 1b on the side where the wedge bonding portion 7 is formed, the holding force of the lead frames 1a and 1b with respect to the sealing resin 8 in the longitudinal direction, and the sealing for sealing the lead frame 1b and the lead frame 1b Each of the contact areas with the resin 8 is brought close to the value of the lead frame 1a on the side where the optical semiconductor element 4 is placed, thereby reducing the amount of displacement of the lead frame 1b and improving the reliability.

  FIG. 3 is a cross-sectional view of a second embodiment relating to the optical semiconductor device of the present invention, and FIG. 4 is an enlarged view of part A of FIG.

  In this embodiment, the mutual position between the connecting portion (ball bonding portion 5) on the optical semiconductor element 4 and the inner bottom surface 3b of the recess 2b provided on the side where the connecting portion (wedge bonding portion 7) of the bonding wire 6 is formed. It is the same as that of the said Example 1 except the relationship being different.

  In this case, the inner bottom surfaces 3a and 3b of the recesses 2a and 2b are both perpendicular to the longitudinal direction of the lead frames 1a and 1b, and the inner bottom surface 3a of the recess 2a on which the optical semiconductor element 4 is mounted is the bonding wire 6. The wedge bonding portion 7 is positioned on the light emitting direction side (lens surface side) of the optical semiconductor element 4 with respect to the inner bottom surface 3b of the recess 2b. This is possible because the recess 2b in which the wedge bonding part 7 is formed is smaller than the recess 2a in which the optical semiconductor element 4 is mounted.

  In other words, in this embodiment, the connection portion (wedge bonding portion 7) formed on the inner bottom surface 3b of the recess 2b of the lead frame 1b on the side where the wedge bonding portion 7 of the bonding wire 6 is formed from the bottom surface 11 of the sealing resin 8 is used. Is shorter than the distance from the bottom surface 11 of the sealing resin to the connection portion (ball bonding portion 5) on the optical semiconductor element 4, and is shorter than that of the first embodiment. This means that the length of the lead frame 1b positioned inside is shortened, and thus the resin stress received by the lead frame 1b in the sealing resin is reduced, and the amount of displacement is suppressed.

  As a result, the effect of the present embodiment is the same as that of the first embodiment, and the disconnection of the bonding wire 6 is suppressed more than the first embodiment, and the electrical reliability is further improved. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

  FIG. 5 is a cross-sectional view of Embodiment 3 relating to the optical semiconductor device of the present invention.

  In this embodiment, a soft resin 12 such as a silicone resin is filled in the concave portion of the lead frame 1b on the side where the wedge bonding portion 7 of the bonding wire 6 is formed with respect to the first embodiment, and further sealed. The resin is sealed with a stop resin 8. The soft resin 12 preferably has a hardness of D 20-30 (JIS K 6253 type D durometer). In this embodiment, a gold wire having a diameter of 25 μm is used as the bonding wire 6, a silicone resin having a hardness of D 28 is used as the soft resin 12, and an epoxy resin having a D 87 to 92 is used as the sealing resin 8, thereby preventing disconnection well. Although it was confirmed that it was possible, it is not necessarily limited to these hardnesses.

  The present embodiment exhibits the same effect as the first embodiment, and the wedge bonding portion 7 of the bonding wire 6 is covered with the soft resin 12, so that the resin stress due to heat at the time of mounting the printed circuit board of the optical semiconductor device, and The burden on the wedge bonding part 7 due to the resin stress caused by intermittent temperature changes due to repeated flashing after mounting the optical semiconductor device on the printed circuit board is reduced, and disconnection of the bonding wire 6 is suppressed more than in the first embodiment. Electrical reliability is further improved. Further, by using the soft resin 12, the soft resin follows the displacement of the bonding wire in the vicinity of the connecting portion and reduces the stress applied to the bonding wire, so that the disconnection of the bonding wire is suppressed.

  FIG. 6 is a cross-sectional view of Embodiment 4 relating to the optical semiconductor device of the present invention.

  In the present embodiment, a soft resin 12 such as a silicone resin is filled in the concave portion of the lead frame 1b in which the wedge bonding of the bonding wire 6 is formed in the second embodiment, and the sealing resin 8 It is resin-sealed. The soft resin 12 is preferably a silicone resin having a hardness of D 20 to 30 and an epoxy resin of D 87 to 92 as the sealing resin 8, but is not necessarily limited to these hardnesses.

  The present embodiment exhibits the same effect as the second embodiment, and the wedge bonding portion 7 of the bonding wire 6 is covered with the soft resin 12, so that the resin stress due to heat when the optical semiconductor device is mounted on the printed board, and The burden on the wedge bonding part 7 due to the resin stress caused by intermittent temperature changes due to repeated flashing after mounting the optical semiconductor device on the printed circuit board is reduced, and disconnection of the bonding wire 6 is suppressed more than in the first embodiment. Electrical reliability is further improved.

  FIG. 7 is a cross-sectional view of Embodiment 5 relating to the optical semiconductor device of the present invention.

  In the present embodiment, a soft resin 12 such as a silicone resin is filled in the concave portion in which the optical semiconductor element 4 is placed as compared with the third embodiment and is further sealed with a sealing resin 8. The soft resin 12 was made of the same material as the soft resin 12 filled in the recess in which the wedge bonding portion 7 of the bonding wire 6 was formed. The soft resin 12 is preferably a silicone resin having a hardness of D 20 to 30 and an epoxy resin of D 87 to 92 as the sealing resin 8, but is not necessarily limited to these hardnesses.

As a result, the ball bonding portion 5 formed by 1st bonding on the upper electrode of the optical semiconductor element 4 is covered with the soft resin 12, so that the resin stress due to heat when the optical semiconductor device is mounted on the printed circuit board and the optical semiconductor device are reduced. The burden on the ball bonding part 5 due to the resin stress resulting from the intermittent temperature change due to repeated blinking after mounting on the printed circuit board is reduced, and the disconnection of the bonding wire 6 is suppressed more than in the third embodiment. Reliability is improved.
FIG. 8 is a cross-sectional view of Embodiment 6 relating to the optical semiconductor device of the present invention.

  In the present embodiment, a soft resin 12 such as a silicone resin is filled in a recess where the optical semiconductor element 4 is placed, and the resin is sealed with a sealing resin 8. The soft resin 12 was made of the same material as the soft resin 12 filled in the recess in which the wedge bonding portion 7 of the bonding wire 6 was formed. The soft resin 12 is preferably a silicone resin having a hardness of D 20 to 30 and an epoxy resin of D 87 to 92 as the sealing resin 8, but is not necessarily limited to these hardnesses.

  As a result, the ball bonding portion 5 formed by 1st bonding on the upper electrode of the optical semiconductor element 4 is covered with the soft resin 12, so that the resin stress due to heat when the optical semiconductor device is mounted on the printed circuit board and the optical semiconductor device are reduced. The burden on the ball bonding portion 5 due to resin stress caused by intermittent temperature changes due to repeated blinking after mounting on the printed circuit board is reduced, and disconnection of the bonding wire 6 is suppressed more than in the fourth embodiment. Reliability is improved.

  In the optical semiconductor device of the present invention, the above is mounted on the inner bottom surface 3a of the larger recess 2a of the two recesses 2a, 2b formed at one end of each of the pair of lead frames 1a, 1b. The ball bonding portion 5 is formed on the upper electrode of the optical semiconductor element 4 by the first bonding of the bonding wire 6, and the 2nd bonding of the bonding wire 6 to the inner bottom surface 3 b of the smaller one of the two recesses 2 a and 2 b is performed. The wedge bonding portion 7 is formed by the above, but the bonding order of the bonding wires 6 can be reversed.

  Specifically, as shown in FIGS. 9 and 10, the inner bottom surface of the smaller one of the two recesses 2a and 2b formed at one end of each of the pair of lead frames 1a and 1b. The ball bonding portion 5 is formed on the surface 3b by the first bonding of the bonding wire 6, and the bonding wire is applied to the upper electrode of the optical semiconductor element 4 mounted on the inner bottom surface 3a of the larger concave portion 2a of the two concave portions 2a and 2b. 6, the wedge bonding portion 7 is formed by 2nd bonding.

  Using the lead frames 1a and 1b on which the bonding wires 6 are wired in this way, it is possible to realize an optical semiconductor device having the same configuration as each of the first to sixth embodiments. That is, the smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are mounted, and the wedge bonding portion 7 of the bonding wire 6 is formed on the upper electrode of the optical semiconductor element 4. A structure in which both the concave portions 2a and 2b of the larger concave portion 2a are filled with the sealing resin 8, or the smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are mounted. A structure in which one of the larger recesses 2a in which the wedge bonding portion 7 of the bonding wire 6 is formed on the upper electrode of the optical semiconductor element 4 is filled with the soft resin 12, and the other is filled with the sealing resin 8, or The smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are Configuration to meet set has been both recesses 2a of the larger recess 2a of the wedge bonding portion 7 is formed of the bonding wire 6 to the upper electrode of the optical semiconductor element 4, 2b together with the soft resin 12, are possible.

  In this case, the bonding wire 6 is connected to the bonding portion between the lead frame 1b and the bonding wire 6 on the side where the optical semiconductor element 4 of the pair of lead frames 1a and 1b is not mounted. A ball bonding portion 5 having a diameter approximately three times as large is formed. Therefore, since the bonding strength with the ball bonding portion 5 is improved, connection failure due to the disconnection of the bonding wire 6 in the vicinity of the ball bonding portion 5 is reduced.

  Further, the upper electrode of the optical semiconductor element 4 mounted on the inner bottom surface 3a of the larger concave portion 2a of the two concave portions 2a and 2b formed at one end of each of the pair of lead frames 1a and 1b. And a ball bonding part 5 formed on the inner bottom surface 3b of the smaller one of the two concave parts 2a and 2b by the first bonding of the bonding wire and the second part by the second bonding. It is also possible to form the ball bonding portion 5 in the first bonding by 7 again.

  Specifically, as shown in FIGS. 11 and 12, the inner bottom surface of the larger recess 2a of the two recesses 2a and 2b formed at one end of each of the pair of lead frames 1a and 1b. A ball bonding portion 5 of the bonding wire 6 is formed on the upper electrode of the optical semiconductor element 4 mounted on 3a, and at the same time, the ball bonding 5 is also applied to the inner bottom surface 3b of the smaller one of the two recesses 2a and 2b. Is formed. That is, both end portions of the bonding wire form the ball bonding portion 5 together.

  Using the lead frames 1a and 1b on which the bonding wires 6 are wired in this way, it is possible to realize an optical semiconductor device having the same configuration as each of the first to sixth embodiments. That is, the smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are mounted, and the ball bonding portion 5 of the bonding wire 6 is formed on the upper electrode of the optical semiconductor element 4. A structure in which both the concave portions 2a and 2b of the larger concave portion 2a are filled with the sealing resin 8, or the smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are mounted. A structure in which one of the larger recesses 2a in which the ball bonding portion 5 of the bonding wire 6 is formed on the upper electrode of the optical semiconductor element 4 is filled with the soft resin 12, and the other is filled with the sealing resin 8. The smaller concave portion 2b in which the ball bonding portion 5 of the bonding wire 6 is formed and the optical semiconductor element 4 are mounted. Is to fill in both soft resin 12 both recesses 2a of the recess 2a towards the ball great bonding part 5 is formed of a bonding wire 6 to the upper electrode, 2b of the optical semiconductor element 4 configuration are possible.

  In this case, the bonding strength between the lead frame 1b of the pair of lead frames 1a and 1b on which the optical semiconductor element 4 is not mounted and the ball bonding portion 5 of the bonding wire 6 with respect to the first to sixth embodiments. Therefore, connection failure due to disconnection of the bonding wire 6 in the vicinity of the ball bonding portion 5 is reduced.

  In this case, increasing the bonding strength at both ends of the bonding wire 6 by making each of the both ends of the bonding wire 6 into the ball bonding portion 5 increases the number of manufacturing steps, but the production efficiency is not good. This is an extremely effective technique for preventing electrical disconnection of the bonding wire 6 against stress and ensuring electrical reliability.

  In the above embodiment, the pair of electrodes of the optical semiconductor element 4 are arranged one above the other. However, the present invention is not limited to this configuration, the pair of electrodes are formed on the upper side, and two electrodes are provided. It is also possible to use an optical semiconductor element 4 connected to each of the bonding wires. In this case, the optical semiconductor element 4 is mounted on the first lead frame, one bonding wire is connected to the inner bottom surface of the recess of the second lead frame, and the other bonding wire is connected to the first lead frame. It is connected to the edge of the recess or the recess of the third lead frame.

  In the optical semiconductor device in the above embodiment, the first lead frame and the second lead frame are provided in parallel, and both lead frames are led out from the same surface of the sealing resin. The present invention is not limited to this configuration, and can be applied as a configuration in which the first lead frame 1a and the second lead frame 1b are led out from the opposing surfaces of the sealing resin 8 as shown in FIG.

It is sectional drawing which shows Example 1 regarding the optical semiconductor device of this invention. It is the A section enlarged view of FIG. It is sectional drawing which shows Example 2 regarding the optical semiconductor device of this invention. It is the A section enlarged view of FIG. It is sectional drawing which shows Example 3 regarding the optical semiconductor device of this invention. It is sectional drawing which shows Example 4 regarding the optical semiconductor device of this invention. It is sectional drawing which shows Example 5 regarding the optical semiconductor device of this invention. It is sectional drawing which shows Example 6 concerning the optical semiconductor device of this invention. It is a fragmentary sectional view which shows the wiring structure of the bonding wire which comprises the other Example concerning the optical semiconductor device of this invention. It is a fragmentary sectional view which shows the wiring structure of the bonding wire which comprises the other Example concerning the optical semiconductor device of this invention. It is a fragmentary sectional view which shows the wiring structure of the bonding wire which comprises the other Example concerning the optical semiconductor device of this invention. It is a fragmentary sectional view which shows the wiring structure of the bonding wire which comprises the other Example concerning the optical semiconductor device of this invention. It is sectional drawing of the conventional optical semiconductor device. It is sectional drawing which shows the state which temporarily fixed the conventional optical semiconductor device to the printed circuit board. It is a fragmentary sectional view which shows the residual stress added to the conventional optical semiconductor device. It is a fragmentary sectional view which shows the displacement by the residual stress added to the conventional optical semiconductor device. It is a fragmentary sectional view which shows the tensile stress added to the conventional optical semiconductor device. It is a fragmentary sectional view which shows the displacement by the tensile stress added to the conventional optical semiconductor device. It is a fragmentary sectional view which shows the resin stress added to the conventional optical semiconductor device. It is a fragmentary sectional view which shows the displacement by the resin stress added to the conventional optical semiconductor device. It is sectional drawing which shows the application example based on the Example concerning the optical semiconductor device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a, 1b Lead frame 2a, 2b Recessed part 3a, 3b Inner bottom face 4 Optical semiconductor element 5 Ball bonding part 6 Bonding wire 7 Wedge bonding part 8 Sealing resin 9 Lens surface 10a, 10b Open end face 11 Bottom face 12 Soft resin

Claims (6)

  1. An optical semiconductor element having a pair of electrodes;
    A first lead frame for mounting the optical semiconductor element;
    A second lead frame formed separately from the first lead frame;
    A bonding wire having one end connected to one electrode of the optical semiconductor element;
    An optical semiconductor device having the optical semiconductor element, the bonding wire, and a first sealing resin that covers the first lead frame and a part of the second lead frame, and the other of the bonding wires Is connected to a second lead frame recess formed in the second lead frame,
    The second lead frame recess is filled with a second sealing resin made of a soft resin, and the connection between the inner bottom surface of the second lead frame recess and the bonding wire is covered with the second sealing resin. The first sealing resin is made of an epoxy resin having a hardness of D87 to 92, and the second sealing resin is made of a silicone resin having a hardness of D20 to 30 .
  2. The optical semiconductor element is placed in a first lead frame recess formed in the first lead frame,
    The first lead frame recess is filled with the second sealing resin, and a connecting portion between the optical semiconductor element and the bonding wire is covered with the second sealing resin. Item 4. The optical semiconductor device according to Item 1.
  3. The first lead frame and the second lead frame are provided in parallel,
    The first sealing resin has a resin bottom surface from which the first lead frame and the second lead frame are led out,
    The distance from the resin bottom surface to the connecting portion between the optical semiconductor element and the bonding wire is different from the distance from the resin bottom surface to the connecting portion between the bottom surface of the second lead frame recess and the bonding wire. The optical semiconductor device according to claim 1 or 2, characterized in that:
  4.   The distance from the resin bottom surface to the connection portion between the optical semiconductor element and the bonding wire is longer than the distance from the resin bottom surface to the connection portion between the bottom surface of the second lead frame recess and the bonding wire. The optical semiconductor device according to claim 3.
  5.   The optical semiconductor device according to claim 1, wherein the first lead frame and the second lead frame are led out from a bottom surface of the first sealing resin.
  6.   The optical semiconductor device according to claim 2, wherein the second lead frame recess is smaller than the first lead frame recess.
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