JP4987416B2 - 中性粒子ビーム発生装置 - Google Patents

中性粒子ビーム発生装置 Download PDF

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Publication number
JP4987416B2
JP4987416B2 JP2006277247A JP2006277247A JP4987416B2 JP 4987416 B2 JP4987416 B2 JP 4987416B2 JP 2006277247 A JP2006277247 A JP 2006277247A JP 2006277247 A JP2006277247 A JP 2006277247A JP 4987416 B2 JP4987416 B2 JP 4987416B2
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ion
particles
neutral particle
electric field
deflectors
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Japanese (ja)
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JP2008096239A (ja
JP2008096239A5 (https=
Inventor
憲司 梅澤
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Osaka Metropolitan University
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Osaka Prefecture University PUC
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  • Drying Of Semiconductors (AREA)
JP2006277247A 2006-10-11 2006-10-11 中性粒子ビーム発生装置 Expired - Fee Related JP4987416B2 (ja)

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JP2006277247A JP4987416B2 (ja) 2006-10-11 2006-10-11 中性粒子ビーム発生装置

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JP2006277247A JP4987416B2 (ja) 2006-10-11 2006-10-11 中性粒子ビーム発生装置

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JP2008096239A JP2008096239A (ja) 2008-04-24
JP2008096239A5 JP2008096239A5 (https=) 2009-11-26
JP4987416B2 true JP4987416B2 (ja) 2012-07-25

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JP2006277247A Expired - Fee Related JP4987416B2 (ja) 2006-10-11 2006-10-11 中性粒子ビーム発生装置

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318058A (ja) * 1987-06-22 1988-12-26 Hitachi Ltd 中性ビ−ム形成方法
JPH0637564Y2 (ja) * 1989-03-07 1994-09-28 株式会社島津製作所 中性粒子散乱分析装置
JP3124353B2 (ja) * 1992-01-10 2001-01-15 沖電気工業株式会社 中性粒子の発生方法及びその装置
JP4647272B2 (ja) * 2004-09-21 2011-03-09 富士通株式会社 電子ビーム描画装置

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JP2008096239A (ja) 2008-04-24

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