JP4866749B2 - 表面分析装置 - Google Patents
表面分析装置 Download PDFInfo
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- JP4866749B2 JP4866749B2 JP2007016345A JP2007016345A JP4866749B2 JP 4866749 B2 JP4866749 B2 JP 4866749B2 JP 2007016345 A JP2007016345 A JP 2007016345A JP 2007016345 A JP2007016345 A JP 2007016345A JP 4866749 B2 JP4866749 B2 JP 4866749B2
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- particles
- neutral
- ion
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Description
2 イオン源
3 パルス化手段
4 多価イオン除去装置
5 中性粒子生成手段
6 除去手段
7 照射手段
8 保持部
9 ガス供給源
10 分析試料
11 検出手段
12 増幅器
13 解析用コンピュータ
14 駆動装置
Claims (4)
- プラズマを生成し、イオン粒子を放出するイオン源と、
イオンビームをパルス化するパルス化手段と、
前記イオンビームから多価イオン粒子を除去する多価イオン粒子除去手段と、
イオン粒子を中性化して中性粒子を生成する中性粒子生成手段と、
前記中性粒子生成手段により生成された中性粒子に含まれる他の粒子を除去する除去手段と、
前記他の粒子が除去された中性粒子ビームを分析試料の表面に入射させる中性粒子入射手段と、
前記分析試料の表面から散乱された前記中性粒子あるいは前記分析試料から放出される原子を検出する検出手段と
を備える表面分析装置。 - 前記パルス化手段は、2組のディフレクタで構成されている、請求項1に記載の表面分析装置。
- 前記中性粒子が希ガスである請求項1または2に記載の表面分析装置。
- 前記中性ビーム粒子の入射速度が3keV以下である請求項1ないし3のいずれかに基材の表面分析装置。
Priority Applications (1)
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JP2007016345A JP4866749B2 (ja) | 2007-01-26 | 2007-01-26 | 表面分析装置 |
Applications Claiming Priority (1)
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JP2007016345A JP4866749B2 (ja) | 2007-01-26 | 2007-01-26 | 表面分析装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008185336A JP2008185336A (ja) | 2008-08-14 |
JP4866749B2 true JP4866749B2 (ja) | 2012-02-01 |
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JP2007016345A Active JP4866749B2 (ja) | 2007-01-26 | 2007-01-26 | 表面分析装置 |
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JP (1) | JP4866749B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5896708B2 (ja) * | 2011-12-06 | 2016-03-30 | 株式会社日立ハイテクノロジーズ | 走査イオン顕微鏡および二次粒子制御方法 |
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2007
- 2007-01-26 JP JP2007016345A patent/JP4866749B2/ja active Active
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JP2008185336A (ja) | 2008-08-14 |
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