JP4978114B2 - 圧電振動片の製造方法 - Google Patents
圧電振動片の製造方法 Download PDFInfo
- Publication number
- JP4978114B2 JP4978114B2 JP2006223928A JP2006223928A JP4978114B2 JP 4978114 B2 JP4978114 B2 JP 4978114B2 JP 2006223928 A JP2006223928 A JP 2006223928A JP 2006223928 A JP2006223928 A JP 2006223928A JP 4978114 B2 JP4978114 B2 JP 4978114B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- piezoelectric
- vibrating piece
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 claims description 143
- 238000010438 heat treatment Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 9
- 235000014676 Phragmites communis Nutrition 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006223928A JP4978114B2 (ja) | 2006-08-21 | 2006-08-21 | 圧電振動片の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006223928A JP4978114B2 (ja) | 2006-08-21 | 2006-08-21 | 圧電振動片の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008048315A JP2008048315A (ja) | 2008-02-28 |
| JP2008048315A5 JP2008048315A5 (enExample) | 2009-09-17 |
| JP4978114B2 true JP4978114B2 (ja) | 2012-07-18 |
Family
ID=39181588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006223928A Expired - Fee Related JP4978114B2 (ja) | 2006-08-21 | 2006-08-21 | 圧電振動片の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4978114B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102959752B (zh) | 2010-08-12 | 2015-09-02 | 株式会社村田制作所 | 压电薄膜元件的制造方法、压电薄膜元件以及压电薄膜元件用部件 |
| CN103531706B (zh) * | 2013-10-22 | 2016-05-25 | 深圳市豪恩声学股份有限公司 | 压电驻极体材料及其制备方法 |
| US20160352307A1 (en) * | 2015-05-27 | 2016-12-01 | Murata Manufacturing Co., Ltd. | Mems resonator with high quality factor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3576788B2 (ja) * | 1998-02-13 | 2004-10-13 | 株式会社東芝 | 電子部品及びその製造方法 |
| JP3127245B1 (ja) * | 1999-09-03 | 2001-01-22 | 工業技術院長 | 多層型電子材料、その製造方法、それを用いたセンサー及び記憶デバイス |
| JP4122430B2 (ja) * | 2003-03-26 | 2008-07-23 | 独立行政法人産業技術総合研究所 | 強誘電体膜 |
-
2006
- 2006-08-21 JP JP2006223928A patent/JP4978114B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008048315A (ja) | 2008-02-28 |
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