JP4972327B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4972327B2
JP4972327B2 JP2006079639A JP2006079639A JP4972327B2 JP 4972327 B2 JP4972327 B2 JP 4972327B2 JP 2006079639 A JP2006079639 A JP 2006079639A JP 2006079639 A JP2006079639 A JP 2006079639A JP 4972327 B2 JP4972327 B2 JP 4972327B2
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JP
Japan
Prior art keywords
electrode
frequency power
plasma processing
high frequency
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006079639A
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English (en)
Japanese (ja)
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JP2007258379A (ja
Inventor
昌伸 本田
裕 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006079639A priority Critical patent/JP4972327B2/ja
Priority to US11/686,618 priority patent/US20070221332A1/en
Priority to KR1020070028048A priority patent/KR100889433B1/ko
Priority to CNB2007100894254A priority patent/CN100570818C/zh
Publication of JP2007258379A publication Critical patent/JP2007258379A/ja
Application granted granted Critical
Publication of JP4972327B2 publication Critical patent/JP4972327B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2006079639A 2006-03-22 2006-03-22 プラズマ処理装置 Expired - Fee Related JP4972327B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006079639A JP4972327B2 (ja) 2006-03-22 2006-03-22 プラズマ処理装置
US11/686,618 US20070221332A1 (en) 2006-03-22 2007-03-15 Plasma processing apparatus
KR1020070028048A KR100889433B1 (ko) 2006-03-22 2007-03-22 플라즈마 처리 장치
CNB2007100894254A CN100570818C (zh) 2006-03-22 2007-03-22 等离子体处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006079639A JP4972327B2 (ja) 2006-03-22 2006-03-22 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2007258379A JP2007258379A (ja) 2007-10-04
JP4972327B2 true JP4972327B2 (ja) 2012-07-11

Family

ID=38632321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006079639A Expired - Fee Related JP4972327B2 (ja) 2006-03-22 2006-03-22 プラズマ処理装置

Country Status (3)

Country Link
JP (1) JP4972327B2 (ko)
KR (1) KR100889433B1 (ko)
CN (1) CN100570818C (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5394403B2 (ja) * 2009-01-09 2014-01-22 株式会社アルバック プラズマ処理装置
JP5357639B2 (ja) 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US11872524B2 (en) * 2020-08-27 2024-01-16 Kioxia Corporation Exhaust pipe device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173711A (ja) * 1987-12-28 1989-07-10 Shimadzu Corp 薄膜形成装置
JPH0469465U (ko) * 1990-10-22 1992-06-19
JPH08319588A (ja) * 1996-06-17 1996-12-03 Hitachi Ltd プラズマエッチング装置
JP4051209B2 (ja) * 2001-02-02 2008-02-20 キヤノンアネルバ株式会社 高周波プラズマ処理装置及び高周波プラズマ処理方法
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
CN102263026B (zh) * 2004-06-21 2016-01-20 东京毅力科创株式会社 等离子体处理装置和方法
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
CN101042989A (zh) 2007-09-26
CN100570818C (zh) 2009-12-16
KR100889433B1 (ko) 2009-03-23
JP2007258379A (ja) 2007-10-04
KR20070095830A (ko) 2007-10-01

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