JP4969177B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4969177B2
JP4969177B2 JP2006223534A JP2006223534A JP4969177B2 JP 4969177 B2 JP4969177 B2 JP 4969177B2 JP 2006223534 A JP2006223534 A JP 2006223534A JP 2006223534 A JP2006223534 A JP 2006223534A JP 4969177 B2 JP4969177 B2 JP 4969177B2
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Prior art keywords
insulating film
light
film
substrate
laser
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Expired - Fee Related
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JP2006223534A
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Japanese (ja)
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JP2008047780A5 (enExample
JP2008047780A (ja
Inventor
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006223534A priority Critical patent/JP4969177B2/ja
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Publication of JP2008047780A5 publication Critical patent/JP2008047780A5/ja
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2006223534A 2006-08-18 2006-08-18 半導体装置の作製方法 Expired - Fee Related JP4969177B2 (ja)

Priority Applications (1)

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JP2006223534A JP4969177B2 (ja) 2006-08-18 2006-08-18 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006223534A JP4969177B2 (ja) 2006-08-18 2006-08-18 半導体装置の作製方法

Publications (3)

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JP2008047780A JP2008047780A (ja) 2008-02-28
JP2008047780A5 JP2008047780A5 (enExample) 2009-09-17
JP4969177B2 true JP4969177B2 (ja) 2012-07-04

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JP2006223534A Expired - Fee Related JP4969177B2 (ja) 2006-08-18 2006-08-18 半導体装置の作製方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118042890B (zh) * 2024-01-17 2024-10-11 惠科股份有限公司 显示面板、显示面板的制备方法以及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755223B2 (ja) * 1995-09-20 1998-05-20 日本電気株式会社 バイアホール形成方法および装置
JP4932173B2 (ja) * 2004-03-25 2012-05-16 株式会社半導体エネルギー研究所 膜パターンの形成方法
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device

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JP2008047780A (ja) 2008-02-28

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