JP4967524B2 - Semiconductor device and wire bonding method - Google Patents

Semiconductor device and wire bonding method Download PDF

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JP4967524B2
JP4967524B2 JP2006221457A JP2006221457A JP4967524B2 JP 4967524 B2 JP4967524 B2 JP 4967524B2 JP 2006221457 A JP2006221457 A JP 2006221457A JP 2006221457 A JP2006221457 A JP 2006221457A JP 4967524 B2 JP4967524 B2 JP 4967524B2
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bond
lead
row
wire
leads
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JP2008047679A (en
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真也 大川
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Yamaha Corp
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Yamaha Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To prevent the occurrence of electric short circuits between the most closely arranged wires out of a plurality of wires for connecting individual groups of electrode pads of a semiconductor chip and two leads arranged adjacent to each other around the semiconductor chip, respectively. <P>SOLUTION: In the semiconductor device 1, second bonds of each three wires 11-13 and 15-17 of each lead 7 and 9 are arranged in the longitudinal direction of the leads 7 and 9. The three first wires 11-13 connected to one lead 7 are connected to the electrode pads 19-21 in a first row arranged in the arranging direction of the leads 7 and 9, while the three second wires 15-17 connected to the other lead 9 are connected to the electrode pads 23-25 in a second row arranged further away from the leads 7 and 9 than those in the first row. The first wire 13 connected to the most posteriorly located second bond of the lead 7 is connected to other electrode pad 20 in the first row than the electrode pad 21 in the first row which is closest to the electrode pads 23-25 in the second row. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、半導体装置及びワイヤーボンディング方法に関する。   The present invention relates to a semiconductor device and a wire bonding method.

従来の半導体装置としては、例えば、特許文献１に示されるように、半導体チップの電極パッドと半導体チップの周囲に配されるリードを１本ずつのワイヤーで電気接続して構成したものがあるが、電極パッドとリードとの間に流れる電流が大きくなると、ワイヤーが加熱されて溶けたり、ワイヤーとリードとの接合部分の合金化がすすんでボイドが発生したりする場合がある。
従来、これを防止する方法としては、例えば、同一のリードと電極パッドとの間に複数本のワイヤーを配して、各ワイヤーに流れる電流の大きさを抑えることが考えられている。この構成の半導体装置においては、その小型化を考慮して各リードにおけるワイヤーのボンディング位置をリードの長手方向に並べている。また、半導体チップの限られた領域において上記ワイヤーのボンディング位置も多数確保する必要があるため、半導体チップの周縁だけではなく、周縁よりも内側の位置にもボンディング位置を設けている。
特開平６−３０２６３８号公報 As a conventional semiconductor device, for example, as disclosed in Patent Document 1, there is a device in which an electrode pad of a semiconductor chip and a lead arranged around the semiconductor chip are electrically connected by one wire at a time. If the current flowing between the electrode pad and the lead is increased, the wire may be heated and melted, or the bonding portion of the wire and the lead may be alloyed and a void may be generated.
Conventionally, as a method for preventing this, for example, it has been considered to arrange a plurality of wires between the same lead and electrode pad to suppress the magnitude of the current flowing through each wire. In the semiconductor device having this configuration, the bonding positions of the wires in each lead are arranged in the longitudinal direction of the lead in consideration of miniaturization. In addition, since it is necessary to secure a large number of bonding positions of the wires in a limited area of the semiconductor chip, bonding positions are provided not only at the periphery of the semiconductor chip but also at a position inside the periphery.
JP-A-6-302638

しかしながら、上記構成の場合には、相互に隣り合うリードに各々接続されるワイヤーのうち、相互に最も近づくワイヤー同士の間で電気的な短絡が発生する虞がある。
本発明は、上記事情を鑑み、相互に隣接するワイヤー同士で電気的な短絡が発生することを防止することができる半導体装置及びワイヤーボンディング方法を提供することを目的とする。 However, in the case of the said structure, there exists a possibility that an electrical short circuit may generate | occur | produce between the wires which are closest to each other among the wires connected to the mutually adjacent leads.
In view of the above circumstances, an object of the present invention is to provide a semiconductor device and a wire bonding method capable of preventing an electrical short circuit between adjacent wires.

上記課題を解決するために、この発明は以下の手段を提案している。
請求項１に係る発明は、複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数並べて設けられたセカンドボンドに接続されている半導体装置であって、前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、前記第１列のファーストボンドは、前記第２列のファーストボンドよりも前記リードの配列方向に沿って前記一方のリード側にずらして配され、前記第１列のファーストボンドと前記第２列のファーストボンドとは、その一部が前記リードの長手方向に重なるように配され、各リードの複数のセカンドボンドに接続される複数のワイヤーのループ高さは、前記セカンドボンドの位置が各リードの先端側から後方側に向かうにしたがって高く設定され、前記一方のリードの最後方のセカンドボンドが、前記一方のリードに対応する前記第１列のファーストボンドのうち、前記他方のリードに対応する前記第２列のファーストボンドに最も近い一のファーストボンドを除く他のファーストボンドに接続されることを特徴とする半導体装置を提案している。
In order to solve the above problems, the present invention proposes the following means.
In the invention according to claim 1, a plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires are connected among the first bonds on the plurality of electrode pads. Is a semiconductor device connected to a second bond provided in a plurality in the longitudinal direction of each lead, wherein the plurality of electrode pads and the first bonds thereof are arranged in the lead arrangement direction. And a second row arranged farther from the lead than the first row, and one of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire. And the second lead has a rising portion higher than the rising portion of the first wire rising from the first bond of the first row. It is electrically connected to the second column first bonds of the ear, the first row first bonds, the arranged staggered to one lead-side along the arrangement direction of the second column of first the lead than bond, The first row first bond and the second row first bond are arranged such that a part thereof overlaps with the longitudinal direction of the lead, and a loop of a plurality of wires connected to a plurality of second bonds of each lead The height of the second bond is set higher as the position of the second bond goes from the leading end side to the rear side of each lead, and the second bond at the end of the one lead is in the first row corresponding to the one lead. Other first bonds except for the first bond closest to the first bond in the second row corresponding to the other lead among the first bonds It proposes a semiconductor device, characterized in that it is connected to the bond.

また、請求項２に係る発明は、複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数設けられたセカンドボンドに接続されている半導体装置であって、前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、前記第１列のファーストボンドは、前記第２列のファーストボンドよりも前記リードの配列方向に沿って前記一方のリード側にずらして配され、前記第１列のファーストボンドと前記第２列のファーストボンドとは、その一部が前記リードの長手方向に重なるように配され、各リードの複数のセカンドボンドに接続される複数のワイヤーのループ高さは、前記セカンドボンドの位置が各リードの先端側から後方側に向かうにしたがって高く設定され、前記他方のリードの最先端のセカンドボンドが、前記他方のリードに対応する前記第２列のファーストボンドのうち、前記一方のリードに対応する前記第１列のファーストボンドに最も近い一のファーストボンドを除く他のファーストボンドに接続されることを特徴とする半導体装置を提案している。
According to a second aspect of the present invention, a plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires are connected among the first bonds on the plurality of electrode pads. A semiconductor device connected to a plurality of second bonds provided in the longitudinal direction of each lead, wherein the plurality of electrode pads and the first bonds thereof are arranged in the lead arrangement direction. And a second row arranged farther from the lead than the first row, and one of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire And a second rising portion higher than a rising portion of the first wire rising from the first bond of the first row. It is electrically connected to the second column first bonds of the ear, the first row first bonds, the arranged staggered to one lead-side along the arrangement direction of the second column of first the lead than bond, The first row first bond and the second row first bond are arranged such that a part thereof overlaps with the longitudinal direction of the lead, and a loop of a plurality of wires connected to a plurality of second bonds of each lead The height is set higher as the position of the second bond moves from the leading end side to the rear side of each lead, and the most advanced second bond of the other lead is in the second row corresponding to the other lead. Other first bonds except for the first bond closest to the first bond in the first row corresponding to the one lead among the first bonds It proposes a semiconductor device, characterized in that it is connected to the bond.

なお、上述したファーストボンドは電極パッドにおけるワイヤーのボンディング位置を示しており、また、セカンドボンドはリードにおけるワイヤーのボンディング位置を示している。
これらの発明に係る半導体装置において、各リードのセカンドボンドと第１列若しくは第２列のファーストボンドとの間を複数本のワイヤーで接続する際には、半導体チップから最も近くに位置するリードの最先端から最後方のセカンドボンドまで順番に個々のワイヤーを接続する。したがって、各リードの最先端のセカンドボンドに接続されたワイヤーのループ高さが最も低く、各リードの最後方のセカンドボンドに接続されたワイヤーのループ高さが最も高くなる。 The first bond described above indicates the bonding position of the wire on the electrode pad, and the second bond indicates the bonding position of the wire on the lead.
In the semiconductor device according to these inventions, when connecting the second bond of each lead and the first bond of the first row or the second row with a plurality of wires, the lead located closest to the semiconductor chip Connect individual wires in sequence from the most advanced to the second bond at the end. Therefore, the loop height of the wire connected to the most advanced second bond of each lead is the lowest, and the loop height of the wire connected to the second bond at the end of each lead is the highest.

また、相互に隣り合う２つのリードと電極パッドとをそれぞれワイヤーで接続する場合、一方のリードから第１列のファーストボンドまでの距離の方が、他方のリードから第２列のファーストボンドまでの距離よりも近いため、一方のリードのセカンドボンドと第１列のファーストボンドとを複数の第１のワイヤーで接続した後に、他方のリードのセカンドボンドと第２列のファーストボンドとを複数の第２のワイヤーで接続する。そして、第２列のファーストボンドから立ち上がる第２のワイヤーの立ち上がり部は、第１のワイヤーの立ち上がり部よりも高いため、一方のリードのセカンドボンドと第１列のファーストボンドとの間に配される第１のワイヤーのループ高さの方が、他方のリードのセカンドボンドと第２列のファーストボンドとの間に配される第２のワイヤーのループ高さよりも低くなる。   In addition, when two adjacent leads and electrode pads are connected by wires, the distance from one lead to the first row first bond is the distance from the other lead to the second row first bond. Since the second bond of one lead and the first bond of the first row are connected by the plurality of first wires, the second bond of the other lead and the first bond of the second row are connected to the plurality of first bonds. Connect with 2 wires. Since the rising portion of the second wire rising from the first row first bond is higher than the rising portion of the first wire, it is arranged between the second bond of one lead and the first bond of the first row. The loop height of the first wire is lower than the loop height of the second wire arranged between the second bond of the other lead and the first bond of the second row.

以上のことから、請求項１に記載の半導体装置のように、一方のリードの最後方のセカンドボンドに接続される第１のワイヤーを第１列の他のファーストボンドに接続することで、第１列の一のファーストボンドに接続される第１のワイヤー（以下、一方のリードの最接近ワイヤーと呼ぶ。）のループ高さを低く設定することができる。したがって、一方のリードの最接近ワイヤーと、この最接近ワイヤーに隣接して他方のリードに接続される第２のワイヤーとのループ高さの差を増加させることができる。   From the above, as in the semiconductor device according to claim 1, the first wire connected to the second bond at the end of one lead is connected to the other first bond in the first row. The loop height of the first wire connected to one row of first bonds (hereinafter referred to as the closest wire of one lead) can be set low. Therefore, the difference in loop height between the closest wire of one lead and the second wire connected to the other lead adjacent to the closest wire can be increased.

また、請求項２に記載の半導体装置のように、他方のリードの最先端のセカンドボンドに接続される第２のワイヤーを第２列の他のファーストボンドに接続することで、第２列の一のファーストボンドに接続される第２のワイヤー（以下、他方のリードの最接近ワイヤーと呼ぶ。）のループ高さを高く設定することができる。したがって、他方のリードの最接近ワイヤーと、この最接近ワイヤーに隣接して一方のリードに接続される第１のワイヤーとのループ高さの差を増加させることができる。   Further, as in the semiconductor device according to claim 2, by connecting the second wire connected to the most advanced second bond of the other lead to the other first bond of the second row, The loop height of the second wire connected to one first bond (hereinafter referred to as the closest wire of the other lead) can be set high. Therefore, the difference in loop height between the closest wire of the other lead and the first wire adjacent to the closest wire and connected to the one lead can be increased.

請求項３に係る発明は、複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数設けられたセカンドボンドに接続されている半導体装置であって、前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、前記第１のワイヤー及び第２のワイヤーのうち平面視で交差する２本のワイヤーの交差部を通過する前記リードの配列方向と平行な断面における前記２本のワイヤーの上下方向の間隔が、前記断面における当該第１のワイヤーと当該第２のワイヤーに隣接する他の第２のワイヤーとの上下方向の間隔、及び、前記断面における当該第２のワイヤーと当該第１のワイヤーに隣接する他の第１のワイヤーとの上下方向の間隔よりも広いことを特徴とする半導体装置を提案している。   In the invention according to claim 3, a plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires are connected among the first bonds on the plurality of electrode pads. Is a semiconductor device connected to a plurality of second bonds provided in the longitudinal direction of each lead, wherein the plurality of electrode pads and the first bond thereof are arranged in a line along the lead arrangement direction; And a second row arranged farther from the lead than the first row, and one of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire. And a second wire having a rising portion higher than a rising portion of the first wire where the other of the leads rises from the first bond of the first row. In the cross-section parallel to the arrangement direction of the leads that are electrically connected to the first bond in the second row and pass through the intersection of two wires of the first wire and the second wire that intersect in plan view The vertical spacing between the two wires is the vertical spacing between the first wire in the cross section and the other second wire adjacent to the second wire, and the second cross section in the cross section. A semiconductor device is proposed which is wider than the distance in the vertical direction between the wire and another first wire adjacent to the first wire.

請求項４に係る発明は、複数の電極パッドを形成した半導体チップの周囲に複数のリードを配列し、各リードが前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち複数本ずつと電気接続されるように、各リードにおける前記ワイヤーのセカンドボンドを、各リードの先端側から後方側に前記ワイヤーのボンディング順序にあわせて並べると共に、前記ワイヤーのボンディング順序が遅くなる程、各リードのセカンドボンドに接続される前記ワイヤーのループ高さを高く設定し、相互に隣り合う前記リードの一方に接続される第１のワイヤーを、前記リードの配列方向に並べられた第１列のファーストボンドの前記電極パッドに接続し、前記リードの他方に接続される第２のワイヤーを、
前記第１列のファーストボンドよりも前記リードから遠い位置に並べられると共に、前記第１列のファーストボンドの一部と前記リードの長手方向に重なるように、前記第１列のファーストボンドよりも前記リードの配列方向に沿って前記他方のリード側にずらして配される第２列のファーストボンドの前記電極パッドに接続し、前記第２のワイヤーに、前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を形成するワイヤーボンディング方法であって、前記一方のリードのセカンドボンドと前記第１列の両端のファーストボンドとの間にそれぞれ前記第１のワイヤーを配した後に、前記一方のリードのセカンドボンドと前記両端のファーストボンドの中間に位置する前記第１列の他のファーストボンドとの間に前記第１のワイヤーを配することを特徴とするワイヤーボンディング方法を提案している。
In the invention according to claim 4, a plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and each of the leads is connected to each first bond on the plurality of electrode pads. so as to be electrically connected to, the second bonding of the wire in the lead, Rutotomoni arranged from the distal end side of each lead the in accordance with the bonding order of the wires on the rear side, as the bonding order of the wires becomes slower, the The loop height of the wire connected to the second bond of the lead is set high, and the first wire connected to one of the leads adjacent to each other is arranged in the first row arranged in the lead arrangement direction. A second wire connected to the electrode pad of the first bond and connected to the other of the leads;
The first column than first bonding arranged at a position far from the lead Rutotomoni, to overlap in the longitudinal direction of the part and the leads of the first row first bonds, than first bonding of the first column Connected to the electrode pads of the first bond in the second row arranged to be shifted to the other lead side along the arrangement direction of the leads, and rises from the first bond in the first row to the second wire A wire bonding method for forming a rising portion that is higher than a rising portion of a first wire, wherein the first wire is disposed between a second bond of the one lead and a first bond at both ends of the first row. After the first row, the other one of the first row located between the second bond of the one lead and the first bond at both ends Proposes a wire bonding method characterized by disposing said first wire between the Asutobondo.

この発明に係るワイヤーボンディング方法によれば、一方のリードと第１列の両端のファーストボンドとをそれぞれ第１のワイヤー（以下、両端ワイヤーと呼ぶ。）で接続した後に、一方のリードと第１列の他のファーストボンドとを第１のワイヤー（以下、中間ワイヤーと呼ぶ。）で接続するため、一方のリードにおける両端ワイヤーのセカンドボンドが、中間ワイヤーのセカンドボンドよりも一方のリードの先端側に配置されることになる。すなわち、両端ワイヤーのループ高さが中間ワイヤーのループ高さよりも低く設定されることになる。
そして、上述したように、他方のリードと第２列のファーストボンドとの間に配される第２のワイヤーのループ高さは、一方のリードと第１列のファーストボンドとの間に配される第１のワイヤーのループ高さよりも高くなるため、上述した両端ワイヤーと、この両端ワイヤーに隣接して他方のリードに接続される第２のワイヤーとのループ高さの差を増加させることができる。 According to the wire bonding method of the present invention, after connecting one lead and the first bond at both ends of the first row with the first wires (hereinafter referred to as both-end wires), the one lead and the first bond are connected. Since the first wire (hereinafter referred to as an intermediate wire) is connected to the other first bond in the row, the second bond of the both end wires in one lead is more distal than the second wire of the intermediate wire. Will be placed. That is, the loop height of both end wires is set lower than the loop height of the intermediate wire.
As described above, the loop height of the second wire arranged between the other lead and the first row first bond is arranged between the one lead and the first row first bond. Since the height of the first wire is higher than the loop height of the first wire, it is possible to increase the difference in loop height between the above-described both-end wires and the second wire connected to the other lead adjacent to the both-end wires. it can.

請求項５に係る発明は、複数の電極パッドを形成した半導体チップの周囲に複数のリードを配列し、各リードが前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち複数本ずつと電気接続されるように、各リードにおける前記ワイヤーのセカンドボンドを、各リードの先端側から後方側に前記ワイヤーのボンディング順序にあわせて並べると共に、前記ワイヤーのボンディング順序が遅くなる程、各リードのセカンドボンドに接続される前記ワイヤーのループ高さを高く設定し、相互に隣り合う前記リードの一方に接続される第１のワイヤーを、前記リードの配列方向に並べられた第１列のファーストボンドの前記電極パッドに接続し、前記リードの他方に接続される第２のワイヤーを、前記第１列のファーストボンドよりも前記リードから遠い位置に並べられると共に、前記第１列のファーストボンドの一部と前記リードの長手方向に重なるように、前記第１列のファーストボンドよりも前記リードの配列方向に沿って前記他方のリード側にずらして配される第２列のファーストボンドの前記電極パッドに接続し、前記第２のワイヤーに、前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を形成するワイヤーボンディング方法であって、前記第２列の両端のファーストボンドの中間に位置する他のファーストボンドと前記他方のリードのセカンドボンドとの間に前記第２のワイヤーを配した後に、前記両端のファーストボンドと前記他方のリードのセカンドボンドとの間に前記第２のワイヤーをそれぞれ配することを特徴とするワイヤーボンディング方法を提案している。
In the invention according to claim 5, a plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and each of the leads is a plurality of wires connected to each first bond on the plurality of electrode pads. so as to be electrically connected to, the second bonding of the wire in the lead, Rutotomoni arranged from the distal end side of each lead the in accordance with the bonding order of the wires on the rear side, as the bonding order of the wires becomes slower, the The loop height of the wire connected to the second bond of the lead is set high, and the first wire connected to one of the leads adjacent to each other is arranged in the first row arranged in the lead arrangement direction. connected to the electrode pad of the first bond, the second wire being connected to the other of said leads, said first row first bond Arranged from remote the lead position far Rutotomoni, to overlap in the longitudinal direction of a part of the first row first bonding of the lead, than first bonding of the first row along the arrangement direction of the lead Connected to the electrode pads of the first bond of the second row arranged offset to the other lead side, and the rising portion of the first wire rising from the first bond of the first row to the second wire A wire bonding method for forming a higher rising portion, wherein the second wire is interposed between another first bond located between the first bonds at both ends of the second row and the second bond of the other lead. The second wire between the first bond at both ends and the second bond at the other lead. It proposes a wire bonding method characterized by being for distribution.

この発明に係るワイヤーボンディング方法によれば、他方のリードと第２列の他のファーストボンドとを第２のワイヤー（以下、中間ワイヤーと呼ぶ。）で接続した後に、他方のリードと第２列の両端のファーストボンドとをそれぞれ第２のワイヤー（以下、両端ワイヤーと呼ぶ。）で接続するため、他方のリードにおける両端ワイヤーのセカンドボンドが、中間ワイヤーのセカンドボンドよりも他方のリードの後方側に配置されることになる。すなわち、両端ワイヤーのループ高さが中間ワイヤーのループ高さよりも高く設定されることになる。
そして、上述したように、一方のリードと第１列のファーストボンドとの間に配される第１のワイヤーのループ高さは、他方のリードと第２列のファーストボンドとの間に配される第２のワイヤーのループ高さよりも低くなるため、上述した両端ワイヤーと、この両端ワイヤーに隣接して一方のリードに接続される第１のワイヤーとのループ高さの差を増加させることができる。 According to the wire bonding method of the present invention, after the other lead and the other first bond in the second row are connected by the second wire (hereinafter referred to as an intermediate wire), the other lead and the second row are connected. Since the first bonds at both ends of the lead wire are connected by the second wires (hereinafter referred to as both-end wires), the second bond of the both end wires in the other lead is behind the second lead of the intermediate wire. Will be placed. That is, the loop height of both end wires is set higher than the loop height of the intermediate wire.
As described above, the loop height of the first wire arranged between one lead and the first row of first bonds is arranged between the other lead and the second row of first bonds. Since the loop height is lower than the loop height of the second wire, it is possible to increase the difference in loop height between the above-described both end wires and the first wire connected to the one lead adjacent to the both end wires. it can.

請求項１の発明によれば、第１列の一のファーストボンドに接続される第１のワイヤーと、この第１のワイヤーに隣接して他方のリードに接続される第２のワイヤーとのループ高さの差を増加させることができるため、相互に隣り合う２つのリードにそれぞれ接続される上記２本のワイヤーの間で電気的な短絡が発生することを防止できる。   According to the invention of claim 1, a loop of a first wire connected to one first bond in the first row and a second wire connected to the other lead adjacent to the first wire Since the difference in height can be increased, it is possible to prevent an electrical short circuit from occurring between the two wires connected to the two adjacent leads.

また、請求項２の発明によれば、第２列の一のファーストボンドに接続される第２のワイヤーと、この第２のワイヤーに隣接して一方のリードに接続される第１のワイヤーとのループ高さの差を増加させることができるため、相互に隣り合う２つのリードにそれぞれ接続される上記２本のワイヤーの間で電気的な短絡が発生することを防止できる。   According to the invention of claim 2, the second wire connected to one first bond of the second row, and the first wire connected to one lead adjacent to the second wire; Therefore, it is possible to prevent the occurrence of an electrical short circuit between the two wires connected to the two adjacent leads.

また、請求項３に係る発明によれば、相互に交差する第１のワイヤーと第２のワイヤーとの上下方向の間隔をより拡大することができるため、相互に隣り合う２つのリードにそれぞれ接続される上記２本のワイヤーの間で電気的な短絡が発生することを防止できる。   Further, according to the invention of claim 3, since the vertical distance between the first wire and the second wire intersecting each other can be further increased, each of the leads is connected to two adjacent leads. It is possible to prevent an electrical short circuit from occurring between the two wires.

また、請求項４に係る発明によれば、第１列の両端のファーストボンドに接続される第１のワイヤーと、この第１のワイヤーに隣接して他方のリードに接続される第２のワイヤーとのループ高さの差を増加させることができるため、相互に隣り合う２つのリードにそれぞれ接続される上記２本のワイヤーの間で電気的な短絡が発生することを防止できる。   According to the invention of claim 4, the first wire connected to the first bond at both ends of the first row and the second wire connected to the other lead adjacent to the first wire Therefore, it is possible to prevent an electrical short circuit from occurring between the two wires connected to the two adjacent leads.

また、請求項５の発明によれば、第２列の両端のファーストボンドに接続される第２のワイヤーと、この第２のワイヤーに隣接して一方のリードに接続される第１のワイヤーとのループ高さの差を増加させることができるため、相互に隣り合う２つのリードにそれぞれ接続される上記２本のワイヤーの間で電気的な短絡が発生することを防止できる。   According to the invention of claim 5, the second wire connected to the first bond at both ends of the second row, the first wire connected to one lead adjacent to the second wire, Therefore, it is possible to prevent the occurrence of an electrical short circuit between the two wires connected to the two adjacent leads.

以下、図１から図４を参照し、本発明の一実施形態に係る半導体装置について説明する。本実施形態の半導体装置１は、図１，２に示すように、略板状のステージ部３に配置された半導体チップ５の周囲に複数のリード７，９を配列すると共に、各リード７，９に３本ずつ接続されたワイヤー１１〜１３，１５〜１７を介して電気接続される電極パッド１９〜２１，２３〜２５を半導体チップ５に複数形成して構成されている。
各リード７，９は、半導体チップ５に向けて延びる細長い形状に形成されている。そして、各リード７，９における３本のワイヤー１１〜１３，１５〜１７のセカンドボンドＬ１１〜Ｌ１３，Ｌ２１〜Ｌ２３は、各リード７，９の長手方向に並べられている、すなわち、半導体チップ５に最も近い先端側から後方側に向けて順番に並べられている。なお、上記セカンドボンドＬ１１〜Ｌ１３，Ｌ２１〜Ｌ２３は、各リード７，９における３本のワイヤー１１〜１３，１５〜１７のボンディング位置のことを示している。 Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. As shown in FIGS. 1 and 2, the semiconductor device 1 according to the present embodiment arranges a plurality of leads 7 and 9 around the semiconductor chip 5 arranged on the substantially plate-like stage portion 3, and each lead 7, 9 is formed by forming a plurality of electrode pads 19 to 21 and 23 to 25 on the semiconductor chip 5 to be electrically connected via wires 11 to 13 and 15 to 17, which are connected three by nine.
Each lead 7 and 9 is formed in an elongated shape extending toward the semiconductor chip 5. The second bonds L11 to L13 and L21 to L23 of the three wires 11 to 13 and 15 to 17 in the leads 7 and 9 are arranged in the longitudinal direction of the leads 7 and 9, that is, the semiconductor chip 5. Are arranged in order from the tip side closest to the rear side. The second bonds L11 to L13 and L21 to L23 indicate the bonding positions of the three wires 11 to 13 and 15 to 17 in the leads 7 and 9, respectively.

各電極パッド１９〜２１，２３〜２５は、各々ワイヤー１１〜１３，１５〜１７が１本ずつボンディングされるように構成されている、すなわち、半導体チップ５におけるワイヤー１１〜１３，１５〜１７のファーストボンドの位置を規定している。
これら複数の電極パッド１９〜２１，２３〜２５は、リード７，９の配列方向に並べられた第１列、及び、第１列よりもリード７，９から遠い位置に並べられた第２列をなすように配置されている。 Each electrode pad 19-21, 23-25 is comprised so that each wire 11-13, 15-17 may be bonded one by one, ie, wire 11-11, 15-17 in semiconductor chip 5 It defines the position of the first bond.
The plurality of electrode pads 19 to 21, 23 to 25 are a first row arranged in the arrangement direction of the leads 7 and 9 and a second row arranged farther from the leads 7 and 9 than the first row. It is arranged to make.

第１列に並べられた３つの電極パッド１９〜２１は、第１のワイヤー１１〜１３により相互に隣り合う２つのリード７，９のうち一方のリード７と電気接続されるようになっている。また、第１列よりも半導体チップ５の内側の第２列に並べられた３つの電極パッド２３〜２５は、第２のワイヤー１５〜１７により一方のリード７に隣り合う他方のリード９と電気接続されるようになっている。なお、第１列に並べられた３つの電極パッド１９〜２１と、第２列に並べられた３つの電極パッド２３〜２５とは、その一部がリード７，９の長手方向に重なるように配置されている。   The three electrode pads 19 to 21 arranged in the first row are electrically connected to one of the two leads 7 and 9 adjacent to each other by the first wires 11 to 13. . Further, the three electrode pads 23 to 25 arranged in the second row inside the semiconductor chip 5 with respect to the first row are electrically connected to the other lead 9 adjacent to the one lead 7 by the second wires 15 to 17. Connected. The three electrode pads 19 to 21 arranged in the first row and the three electrode pads 23 to 25 arranged in the second row are overlapped in the longitudinal direction of the leads 7 and 9. Has been placed.

ここで、一方のリード７から第１列の電極パッド１９〜２１までの距離は、他方のリード９から第２列の電極パッド２３〜２５までの距離よりも近いため、一方のリード７と第１列の電極パッド１９〜２１とを接続する第１のワイヤー１１〜１３のループ高さは、他方のリード９と第２列の電極パッド１９〜２１とを接続する第２のワイヤー１５〜１７のループ高さよりも低く設定されている。
すなわち、各ワイヤー１１〜１３，１５〜１７は、各電極パッド１９〜２１，２３〜２５のファーストボンドから垂直に立ち上がる立ち上がり部１１ａ〜１３ａ，１５ａ〜１７ａを有しており、第１のワイヤー１１〜１３の立ち上がり部１１ａ〜１３ａは、第２のワイヤー１５〜１７の立ち上がり部１５ａ〜１７ａよりも低く設定されている。なお、上記立ち上がり部１１ａ〜１３ａ，１５ａ〜１７ａは、各電極パッド１９〜２１，２３〜２５のファーストボンドから各ワイヤー１１〜１３，１５〜１７の最も高い点までの部分となっている。 Here, since the distance from one lead 7 to the first row of electrode pads 19 to 21 is shorter than the distance from the other lead 9 to the second row of electrode pads 23 to 25, The loop height of the first wires 11 to 13 connecting the first row of electrode pads 19 to 21 is the second wire 15 to 17 connecting the other lead 9 and the second row of electrode pads 19 to 21. Is set lower than the loop height.
That is, each of the wires 11 to 13 and 15 to 17 has rising portions 11a to 13a and 15a to 17a that vertically rise from the first bonds of the electrode pads 19 to 21 and 23 to 25. -13 rising parts 11a-13a are set lower than the rising parts 15a-17a of the second wires 15-17. The rising portions 11a to 13a and 15a to 17a are portions from the first bond of the electrode pads 19 to 21, 23 to 25 to the highest point of the wires 11 to 13 and 15 to 17, respectively.

また、各リード７，９におけるワイヤー１１〜１３，１５〜１７のセカンドボンドが半導体チップ５に近い程、ワイヤー１１〜１３，１５〜１７のループ高さが低くなるように設定されている。すなわち、同一リード７，９に接続されたワイヤー１１〜１３，１５〜１７については、各リード７，９の最先端のセカンドボンドＬ１１，Ｌ２１に接続されたワイヤー１１，１５のループ高さが最も低く、各リード７，９の最後方のセカンドボンドＬ１３，Ｌ２３に接続されたワイヤー１３，１７のループ高さが最も高くなるように設定されている。
上述した各ワイヤー１１〜１３，１５〜１７のループ高さは、後述するワイヤーボンディング方法によって規定されるものである。 The loop heights of the wires 11 to 13 and 15 to 17 are set to be lower as the second bonds of the wires 11 to 13 and 15 to 17 in the leads 7 and 9 are closer to the semiconductor chip 5. That is, for the wires 11 to 13 and 15 to 17 connected to the same leads 7 and 9, the loop height of the wires 11 and 15 connected to the most advanced second bonds L11 and L21 of the leads 7 and 9 is the highest. The loop height of the wires 13 and 17 connected to the second bonds L13 and L23 at the rear end of the leads 7 and 9 is set to be the highest.
The loop height of each of the wires 11 to 13 and 15 to 17 is defined by a wire bonding method described later.

そして、この半導体装置１においては、一方のリード７の最後方のセカンドボンドＬ１３に接続される第１のワイヤー１３が、第１列の両端の電極パッド１９，２１の間に配置される電極パッド２０に接続されている。そして、最後方のセカンドボンドＬ１３よりも半導体チップ５に近い一方のリード７の先端側の各セカンドボンドＬ１１，Ｌ１２に接続される第１のワイヤー１１，１２が、第１列の両端の電極パッド１９，２１にそれぞれ接続されている。   In the semiconductor device 1, the first wire 13 connected to the second bond L13 at the rear end of one lead 7 is disposed between the electrode pads 19 and 21 at both ends of the first row. 20 is connected. The first wires 11, 12 connected to the second bonds L 11, L 12 on the tip side of one lead 7 closer to the semiconductor chip 5 than the last second bond L 13 are electrode pads on both ends of the first row. 19 and 21, respectively.

また、他方のリード９の最先端のセカンドボンドＬ２１に接続される第２のワイヤー１５は、第２列の両端の電極パッド２３，２５の間に配置される電極パッド２４に接続されている。そして、最先端のセカンドボンドＬ２１よりも半導体チップ５から遠い他方のリード９の後方側の各セカンドボンドＬ２２，Ｌ２３に接続される第２のワイヤー１６，１７は、第２列の両端の電極パッド２３，２５にそれぞれ接続されている。   Further, the second wire 15 connected to the most advanced second bond L21 of the other lead 9 is connected to the electrode pad 24 disposed between the electrode pads 23 and 25 at both ends of the second row. The second wires 16 and 17 connected to the second bonds L22 and L23 on the rear side of the other lead 9 farther from the semiconductor chip 5 than the most advanced second bond L21 are electrode pads at both ends of the second row. 23 and 25, respectively.

以上のように構成された半導体装置１において、各リード７，９と電極パッド１９〜２１，２３〜２５とをワイヤー１１〜１３，１５〜１７で接続するワイヤーボンディング方法について、以下に説明する。
一のリード７，９と一の電極パッド１９〜２１，２３〜２５との間をワイヤー１１〜１３，１５〜１７で接続する際には、予めキャピラリ（不図示）の先端にトーチ等によりワイヤーを溶融したボールを形成した状態で、該ボールを一の電極パッド１９〜２１，２３〜２５に加熱圧着させてファーストボンドを形成した後に、キャピラリを上方に移動させながらキャピラリ内のワイヤーを吐出する。次いで、このワイヤーが一の電極パッド１９〜２１，２３〜２５と一のリード７，９との間にループを形成するように、一のリード７，９に向けて横方向にキャピラリを移動させる。そして、キャピラリの先端を一のリード７，９のセカンドボンドＬ１１〜Ｌ１３，Ｌ２１〜Ｌ２３にワイヤーを押し付けて熱圧着し、キャピラリを再度上方に移動させてからワイヤーを切断する。
なお、上述した熱圧着時や切断時に超音波を用いる等、ボンディング方法やボンディングツールは、ここでは公知のものを使用するものとする。また、ワイヤー１１〜１３，１５〜１７の立ち上がり部１１ａ〜１３ａ，１５ａ〜１７ａは、キャピラリが一の電極パッド１９〜２１，２３〜２５から上方に移動する際に形成される。 In the semiconductor device 1 configured as described above, a wire bonding method for connecting the leads 7 and 9 and the electrode pads 19 to 21 and 23 to 25 with the wires 11 to 13 and 15 to 17 will be described below.
When connecting one lead 7, 9 and one electrode pad 19-21, 23-25 with a wire 11-13, 15-17, a wire with a torch or the like is previously attached to the tip of a capillary (not shown). After the ball is melted, the ball is heated and pressure-bonded to one of the electrode pads 19 to 21, 23 to 25 to form a first bond, and then the wire in the capillary is discharged while moving the capillary upward. . Next, the capillary is moved laterally toward the one lead 7, 9 so that this wire forms a loop between the one electrode pad 19-21, 23-25 and the one lead 7, 9. . Then, the tip of the capillary is pressed against the second bonds L11 to L13 and L21 to L23 of one lead 7 and 9 by thermocompression bonding, the capillary is moved upward again, and then the wire is cut.
In addition, a well-known thing shall be used here as a bonding method and a bonding tool, such as using an ultrasonic wave at the time of the above-mentioned thermocompression bonding or cutting. The rising portions 11a to 13a and 15a to 17a of the wires 11 to 13 and 15 to 17 are formed when the capillary moves upward from one electrode pad 19 to 21, 23 to 25.

また、このワイヤーボンディング方法においては、ワイヤー１１〜１３，１５〜１７の長さが短いものから順番にワイヤーボンディングを行う。すなわち、リード７，９から近い位置に配される第１列の電極パッド１９〜２１と一方のリード７とを３本の第１のワイヤー１１〜１３で接続した後に、第２列の電極パッド２３〜２５と他方のリード９とを３本の第２のワイヤー１５〜１７で接続する。また、各リード７，９においては、リード７，９の最先端から最後方のセカンドボンドＬ１１〜Ｌ１３，Ｌ２１〜Ｌ２３まで順番に個々のワイヤー１１〜１３，１５〜１７を接続する。
なお、この方法において、各リード７，９と電極パッド１９〜２１，２３〜２５とを接続するワイヤー１１〜１３，１５〜１７のループ高さは、ワイヤーボンディングの順番が遅くなる程高くなるようになっている。 Moreover, in this wire bonding method, wire bonding is performed in order from the wire 11-11, 15-17 with the short length. That is, after connecting the first row of electrode pads 19 to 21 and one lead 7 arranged at positions close to the leads 7 and 9 with the three first wires 11 to 13, the second row of electrode pads 23 to 25 and the other lead 9 are connected by three second wires 15 to 17. In each of the leads 7 and 9, the individual wires 11 to 13 and 15 to 17 are connected in order from the leading edge of the leads 7 and 9 to the second bonds L11 to L13 and L21 to L23 at the end.
In this method, the loop heights of the wires 11 to 13 and 15 to 17 connecting the leads 7 and 9 and the electrode pads 19 to 21 and 23 to 25 become higher as the wire bonding order becomes slower. It has become.

一方のリード７と第１列の電極パッド１９〜２１とを３本の第１のワイヤー１１〜１３で接続する際には、はじめに、第１列の両端の電極パッド１９，２１のうち第２列の電極パッド２３〜２５から最も離れて位置する一方の電極パッド１９と、一方のリード７の最先端のセカンドボンドＬ１１とを第１のワイヤー１１で接続する。次いで、第２列の電極パッド２３〜２５に最も近くに位置する他方の電極パッド２１と、最先端のセカンドボンドＬ１１よりも後方側に位置する一方のリード７のセカンドボンドＬ１２とを第１のワイヤー１２で接続する。最後に、上記両端の電極パッド１９，２１の中間に位置する第１列の電極パッド２０と、一方のリード７の最後方のセカンドボンドＬ１３とを第１のワイヤー１３で接続する。   When one lead 7 and the first row of electrode pads 19 to 21 are connected by the three first wires 11 to 13, first, the second of the electrode pads 19 and 21 at both ends of the first row. One electrode pad 19 that is located farthest from the electrode pads 23 to 25 in the row and the most advanced second bond L11 of one lead 7 are connected by the first wire 11. Next, the other electrode pad 21 located closest to the electrode pads 23 to 25 in the second row and the second bond L12 of the one lead 7 located behind the most advanced second bond L11 are first Connect with wire 12. Finally, a first wire 13 is connected to the electrode pad 20 in the first row located in the middle of the electrode pads 19 and 21 at both ends and the second bond L13 at the end of one lead 7.

上述のように、一方のリード７と第１列の電極パッド１９〜２１とを接続した後には、他方のリード９と第２列の電極パッド２３〜２５とを３本の第２のワイヤー１５〜１７で接続する。この際には、はじめに、第２列の両端の電極パッド２３，２５の中間に位置する第２列の電極パッド２４と、他方のリード９の最先端のセカンドボンドＬ２１とを第２のワイヤー１５で接続する。次いで、上記両端の電極パッド２３，２５のうち第１列の電極パッド１９〜２１に最も近くに位置する一方の電極パッド２３と、上記最先端のセカンドボンドＬ２１よりも後方側に位置する他方のリード９のセカンドボンドＬ２２とを第２のワイヤー１６で接続する。最後に、第１列の電極パッド１９〜２１から最も遠くに位置する他方の電極パッド２５と、他方のリード９の最後方のセカンドボンドＬ２３とを第２のワイヤー１７で接続する。
なお、これら第２のワイヤー１５〜１７を配する際には、第２のワイヤー１５〜１７に第１のワイヤー１１〜１３の立ち上がり部１１ａ〜１３ａよりも高い立ち上がり部１５ａ〜１７ａを形成する。 As described above, after one lead 7 and the first row of electrode pads 19 to 21 are connected, the other lead 9 and the second row of electrode pads 23 to 25 are connected to the three second wires 15. Connect with ~ 17. At this time, first, the second wire 15 is connected to the electrode pad 24 in the second row located between the electrode pads 23 and 25 at both ends of the second row, and the second bond L21 at the leading edge of the other lead 9. Connect with. Next, of the electrode pads 23 and 25 at both ends, one electrode pad 23 located closest to the electrode pads 19 to 21 in the first row and the other electrode pad 23 located rearward of the most advanced second bond L21. The second bond L22 of the lead 9 is connected by the second wire 16. Finally, the other electrode pad 25 farthest from the electrode pads 19 to 21 in the first row and the second bond L23 at the end of the other lead 9 are connected by the second wire 17.
In addition, when arrange | positioning these 2nd wires 15-17, the rising parts 15a-17a higher than the rising parts 11a-13a of the 1st wires 11-13 are formed in the 2nd wires 15-17.

上述の順序でワイヤーボンディングを行うことにより、図３に示すように、第１列の両端の電極パッド１９，２１に接続された第１のワイヤー１１，１２のループ高さが、これら電極パッド１９，２１の中間に位置する第１列の電極パッド２０に接続された第１のワイヤー１３のループ高さよりも低くなる。また、第２列の両端の電極パッド２３，２５に接続された第２のワイヤー１６，１７のループ高さが、これら電極パッド２３，２５の間に位置する第２列の電極パッド２４に接続された第２のワイヤー１５のループ高さよりも高くなる。
したがって、第２列の電極パッド２３〜２５に最も近い第１列の電極パッド２１と一方のリード７とに接続された第１のワイヤー１２と、第１列の電極パッド１９〜２１に最も近い第２列の電極パッド２３と他方のリード９とに接続された第２のワイヤー１６とは、平面視で相互に隣り合うことになるが、これら２本のワイヤー１２，１６のループ高さの差を増加させることができる。 By performing the wire bonding in the above-described order, as shown in FIG. 3, the loop height of the first wires 11 and 12 connected to the electrode pads 19 and 21 at both ends of the first row is such that the electrode pads 19 , 21 is lower than the loop height of the first wire 13 connected to the electrode pad 20 in the first row located in the middle. The loop height of the second wires 16 and 17 connected to the electrode pads 23 and 25 at both ends of the second row is connected to the electrode pad 24 in the second row located between the electrode pads 23 and 25. It becomes higher than the loop height of the made second wire 15.
Therefore, the first wire 12 connected to the electrode pad 21 in the first row closest to the electrode pads 23 to 25 in the second row and the one lead 7 and the electrode pads 19 to 21 in the first row are closest. The second wire 16 connected to the electrode pad 23 in the second row and the other lead 9 is adjacent to each other in a plan view, but the loop height of these two wires 12 and 16 is The difference can be increased.

また、上記２本のワイヤー１２，１６は平面視で交差しているが、この交差部Ｓ１を通過するリード７，９の配列方向と平行な断面（図１のＣ−Ｃ断面）においては、図４に示すように、上記２本のワイヤー１２，１６の上下方向（ｚ方向）の間隔が、交差部Ｓ１をなす第１のワイヤー１２と、交差部Ｓ１をなす第２のワイヤー１６に隣接する他の第２のワイヤー１５との上下方向の間隔や、交差部Ｓ１をなす第２のワイヤー１６と、交差部Ｓ１をなす第１のワイヤー１２に隣接する他の第１のワイヤー１３との上下方向の間隔よりも広くなっている。   The two wires 12 and 16 intersect in plan view, but in a cross section (CC cross section in FIG. 1) parallel to the arrangement direction of the leads 7 and 9 passing through the intersecting portion S1, As shown in FIG. 4, the distance between the two wires 12 and 16 in the vertical direction (z direction) is adjacent to the first wire 12 forming the intersection S1 and the second wire 16 forming the intersection S1. The distance between the other second wire 15 in the vertical direction, the second wire 16 that forms the intersection S1, and the other first wire 13 that is adjacent to the first wire 12 that forms the intersection S1. It is wider than the vertical spacing.

なお、上述したワイヤーボンディングの順序を無視して、例えば、図５，６に示すように、各リード７，９における３本のワイヤー３１〜３３，３５〜３７のボンディング順序を、各リード７，９に対応する電極パッド１９〜２１，２３〜２５の配列にあわせて行った場合には、一方のリード７と第１列の電極パッド１９〜２１とを接続する第１のワイヤー３１〜３３の中で、第２列の電極パッド２３〜２５に最も近くに位置する第１列の電極パッド２１に接続される第１のワイヤー３３が最後に配されることになる。このため、この第１のワイヤー３３のループ高さが一方のリード７に接続される第１のワイヤー３１〜３３の中で最も高くなってしまう。   For example, as shown in FIGS. 5 and 6, the order of bonding the three wires 31 to 33 and 35 to 37 in each lead 7 and 9 is changed to each lead 7, ignoring the order of wire bonding described above. 9 is performed in accordance with the arrangement of the electrode pads 19 to 21 and 23 to 25 corresponding to 9, the first wires 31 to 33 for connecting the one lead 7 and the electrode pads 19 to 21 of the first row. Among them, the first wire 33 connected to the electrode pad 21 in the first row located closest to the electrode pads 23 to 25 in the second row is arranged last. For this reason, the loop height of the first wire 33 is the highest among the first wires 31 to 33 connected to the one lead 7.

また、他方のリード９と第２列の電極パッド２３〜２５とを接続する第２のワイヤー３５〜３７の中で、第１列の電極パッド１９〜２１に最も近くに位置する第２列の電極パッド２３に接続されるワイヤー３５が最初に配されることになる。このため、この第２のワイヤー３５のループ高さが他方のリード９に接続される第２のワイヤー３５〜３７の中で最も低くなってしまう。
したがって、各リード７，９にそれぞれ接続されて平面視で相互に隣り合う２本のワイヤー３３，３５のループ高さの差が小さくなってしまう。 Of the second wires 35 to 37 that connect the other lead 9 and the second row of electrode pads 23 to 25, the second row of the second row located closest to the first row of electrode pads 19 to 21. The wire 35 connected to the electrode pad 23 is first arranged. For this reason, the loop height of the second wire 35 is the lowest among the second wires 35 to 37 connected to the other lead 9.
Therefore, the difference in loop height between the two wires 33 and 35 connected to the leads 7 and 9 and adjacent to each other in plan view is reduced.

上述したように、この実施形態に係る半導体装置１及びワイヤーボンディング方法によれば、各リード７，９にそれぞれ接続されて平面視で相互に隣り合う２本のワイヤー１２，１６のループ高さの差を増加させることができるため、また、交差部Ｓ１における２本のワイヤー１２，１６の上下方向の間隔をより拡大することができるため、これら２本のワイヤー１２，１６の間で電気的な短絡が発生することを防止できる。   As described above, according to the semiconductor device 1 and the wire bonding method according to this embodiment, the loop height of the two wires 12 and 16 that are respectively connected to the leads 7 and 9 and are adjacent to each other in plan view. Since the difference can be increased and the vertical distance between the two wires 12 and 16 at the intersection S1 can be further increased, the electrical connection between the two wires 12 and 16 can be increased. It is possible to prevent a short circuit from occurring.

なお、上記実施形態のワイヤーボンディング方法においては、第２列の電極パッド２３〜２５から最も離れて位置する第１列の一方の電極パッド１９に第１のワイヤー１１を接続した後に、第１列の他方の電極パッド２１に第１のワイヤー１２を接続するとしたが、これに限ることはなく、例えば、第１列の他方の電極パッド２１に第１のワイヤーを接続した後に、第１列の他方の電極パッド１９に第１のワイヤーを接続してもよい。
また、第１列の電極パッド１９〜２１に最も近くに位置する第２列の一方の電極パッド２３に第２のワイヤー１６を接続した後に、第２列の他方の電極パッド２５に第２のワイヤー１７を接続するとしたが、これに限ることはなく、例えば、第２列の他方の電極パッド２５に第２のワイヤーを接続した後に、第２列の一方の電極パッド２３に第２のワイヤーを接続してもよい。 In the wire bonding method of the above embodiment, after the first wire 11 is connected to one electrode pad 19 in the first row that is located farthest from the electrode pads 23 to 25 in the second row, the first row The first wire 12 is connected to the other electrode pad 21 of the first row, but the present invention is not limited to this. For example, after the first wire is connected to the other electrode pad 21 of the first row, A first wire may be connected to the other electrode pad 19.
In addition, after the second wire 16 is connected to one electrode pad 23 in the second row located closest to the electrode pads 19 to 21 in the first row, the second electrode pad 25 is connected to the second electrode pad 25 in the second row. The wire 17 is connected, but the present invention is not limited to this. For example, after the second wire is connected to the other electrode pad 25 in the second row, the second wire is connected to the one electrode pad 23 in the second row. May be connected.

さらに、上記半導体装置１において、一方のリード７の最後方のセカンドボンドＬ１３に接続される第１のワイヤー１３は、第１列の両端の電極パッド１９，２１の中間に配置される電極パッド２０に接続されるとしたが、これに限ることはなく、少なくとも第１列の電極パッド１９〜２１のうち第２列の電極パッド（第２列のファーストボンド）２３〜２５に最も近い一の電極パッド（一のファーストボンド）２１を除く、他の電極パッド（他のファーストボンド）１９，２０に接続されていればよい。   Furthermore, in the semiconductor device 1, the first wire 13 connected to the second bond L 13 at the rear end of one lead 7 is an electrode pad 20 disposed between the electrode pads 19 and 21 at both ends of the first row. However, the present invention is not limited to this. At least one of the electrode pads 19 to 21 in the first row that is closest to the electrode pads (first bonds in the second row) 23 to 25 in the second row It is only necessary to connect to other electrode pads (other first bonds) 19 and 20 except for the pad (one first bond) 21.

また、他方のリード９の最先端のセカンドボンドＬ２１に接続される第２のワイヤー１５は、第２列の両端の電極パッド２３，２５の間に配置される電極パッド２４に接続されるとしたが、これに限ることはなく、少なくとも第２列の電極パッド２３〜２５のうち第１列の電極パッド（第１列のファーストボンド）１９〜２１に最も近い一の電極パッド（一のファーストボンド）２３を除く、他の電極パッド（他のファーストボンド）２４，２５に接続されていればよい。   The second wire 15 connected to the most advanced second bond L21 of the other lead 9 is connected to the electrode pad 24 disposed between the electrode pads 23 and 25 at both ends of the second row. However, the present invention is not limited to this, and at least one electrode pad (one first bond) of electrode pads 23 to 25 closest to the first row electrode pads (first row first bonds) 19 to 21 among the second row electrode pads 23 to 25. ) Except for 23, it may be connected to other electrode pads (other first bonds) 24, 25.

さらに、上記実施形態においては、相互に隣り合う２つのリード７，９にそれぞれ接続される３本のワイヤー１１〜１３，１５〜１７のボンディング位置やボンディング順序を規定したが、これに限ることはなく、これら２つのリード７，９の少なくとも一方に接続される３本のワイヤー１１〜１３，１５〜１７のボンディング位置やボンディング順序のみを規定すればよい。すなわち、例えば、第１列の電極パッド１９〜２１と一方のリード７とを接続する３本の第１のワイヤー１１〜１３については、上記実施形態のボンディング位置やボンディング順序とし、第２列の電極パッド２３〜２５と他方のリード９とを接続する３本のワイヤー１５〜１７については、図５，６に示す比較例と同様のボンディング位置やボンディング順序としても構わない。   Further, in the above embodiment, the bonding positions and bonding order of the three wires 11 to 13 and 15 to 17 connected to the two leads 7 and 9 adjacent to each other are defined, but the present invention is not limited to this. Instead, it is only necessary to define the bonding position and bonding order of the three wires 11 to 13 and 15 to 17 connected to at least one of the two leads 7 and 9. That is, for example, for the three first wires 11 to 13 that connect the electrode pads 19 to 21 in the first row and the one lead 7, the bonding position and the bonding order in the above embodiment are used, and the second row The three wires 15 to 17 that connect the electrode pads 23 to 25 and the other lead 9 may have the same bonding positions and bonding order as in the comparative example shown in FIGS.

また、各電極パッド１９〜２１，２３〜２５には、それぞれワイヤー１１〜１３，１５〜１７が１本ずつボンディングされるとしたが、これに限ることはなく、例えば、１つの電極パッドに、同一のリードに接続された３本のワイヤーをボンディングするとしても構わない。この構成の場合には、１つの電極パッドにおける３本のワイヤーのファーストボンドがリード７，９の配列方向に並べられるように、各電極パッドを上記配列方向に延ばして形成しておけばよい。
さらに、上記実施形態においては、各リード７，９と電極パッド１９〜２１，２３〜２５との間に、３本ずつのワイヤー１１〜１３，１５〜１７を配した構成について述べたが、４本以上のワイヤーを配した構成にも同様に適用することができる。 In addition, each of the electrode pads 19 to 21 and 23 to 25 is bonded with one wire 11 to 13 and 15 to 17 respectively. However, the present invention is not limited to this. For example, Three wires connected to the same lead may be bonded. In the case of this configuration, each electrode pad may be formed extending in the arrangement direction so that the first bonds of the three wires in one electrode pad are arranged in the arrangement direction of the leads 7 and 9.
Further, in the above embodiment, the configuration in which three wires 11 to 13 and 15 to 17 are arranged between each lead 7 and 9 and the electrode pads 19 to 21 and 23 to 25 has been described. The present invention can be similarly applied to a configuration in which more wires are arranged.

以上、本発明の実施形態について図面を参照して詳述したが、具体的な構成はこの実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。   As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

本発明の一実施形態に係る半導体装置の要部を示す概略平面図である。It is a schematic plan view which shows the principal part of the semiconductor device which concerns on one Embodiment of this invention. 図１の半導体装置の要部を示す概略側面図である。FIG. 2 is a schematic side view showing a main part of the semiconductor device of FIG. 1. 図１のＡ−Ａ矢視断面図である。It is AA arrow sectional drawing of FIG. 図１のＣ−Ｃ矢視断面図である。It is CC sectional view taken on the line of FIG. 図１の半導体装置の比較例を示す概略平面図である。FIG. 2 is a schematic plan view showing a comparative example of the semiconductor device of FIG. 1. 図５のＢ−Ｂ矢視断面図である。It is BB arrow sectional drawing of FIG.

符号の説明Explanation of symbols

１・・・半導体装置、５・・・半導体チップ、７・・・一方のリード、９・・・他方のリード、１１〜１３・・・第１のワイヤー、１１ａ〜１３ａ・・・立ち上がり部、１５〜１７・・・第２のワイヤー、１５ａ〜１７ａ・・・立ち上がり部、１９〜２１・・・第１列の電極パッド（第１列のファーストボンド）、２３〜２５・・・第２列の電極パッド（第２列のファーストボンド）、Ｌ１１〜Ｌ１３，Ｌ２１〜Ｌ２３・・・セカンドボンド

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 5 ... Semiconductor chip, 7 ... One lead, 9 ... Other lead, 11-13 ... 1st wire, 11a-13a ... Rising part, 15-17 ... 2nd wire, 15a-17a ... Rising part, 19-21 ... 1st row electrode pad (first row first bond), 23-25 ... 2nd row Electrode pads (first row first bond), L11 to L13, L21 to L23, second bond

Claims (5)

複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数並べて設けられたセカンドボンドに接続されている半導体装置であって、
前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、
相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、
前記第１列のファーストボンドは、前記第２列のファーストボンドよりも前記リードの配列方向に沿って前記一方のリード側にずらして配され、
前記第１列のファーストボンドと前記第２列のファーストボンドとは、その一部が前記リードの長手方向に重なるように配され、
各リードの複数のセカンドボンドに接続される複数のワイヤーのループ高さは、前記セカンドボンドの位置が各リードの先端側から後方側に向かうにしたがって高く設定され、
前記一方のリードの最後方のセカンドボンドが、前記一方のリードに対応する前記第１列のファーストボンドのうち、前記他方のリードに対応する前記第２列のファーストボンドに最も近い一のファーストボンドを除く他のファーストボンドに接続されることを特徴とする半導体装置。 A plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires connected to each first bond on the plurality of electrode pads are arranged in the longitudinal direction of each lead. A semiconductor device connected to a second bond provided side by side,
The plurality of electrode pads and their first bonds form a first column arranged along the lead arrangement direction, and a second column arranged farther from the lead than the first column,
One of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire, and the other end of the lead rises from the first bond of the first row. Electrically connected to the second row of first bonds by a second wire having a raised portion higher than the portion;
The first bond in the first row is arranged to be shifted to the one lead side in the lead arrangement direction with respect to the first bond in the second row,
The first row first bond and the second row first bond are arranged such that a part thereof overlaps the longitudinal direction of the lead,
The loop height of the plurality of wires connected to the plurality of second bonds of each lead is set higher as the position of the second bond is directed from the leading end side to the rear side of each lead,
The first bond at the end of the one lead closest to the first bond in the second row corresponding to the other lead among the first bonds in the first row corresponding to the one lead A semiconductor device characterized in that it is connected to other first bonds except for. 複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数設けられたセカンドボンドに接続されている半導体装置であって、
前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、
相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、
前記第１列のファーストボンドは、前記第２列のファーストボンドよりも前記リードの配列方向に沿って前記一方のリード側にずらして配され、
前記第１列のファーストボンドと前記第２列のファーストボンドとは、その一部が前記リードの長手方向に重なるように配され、
各リードの複数のセカンドボンドに接続される複数のワイヤーのループ高さは、前記セカンドボンドの位置が各リードの先端側から後方側に向かうにしたがって高く設定され、
前記他方のリードの最先端のセカンドボンドが、前記他方のリードに対応する前記第２列のファーストボンドのうち、前記一方のリードに対応する前記第１列のファーストボンドに最も近い一のファーストボンドを除く他のファーストボンドに接続されることを特徴とする半導体装置。 A plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires connected to each first bond on the plurality of electrode pads are arranged in the longitudinal direction of each lead. A semiconductor device connected to the provided second bond,
The plurality of electrode pads and their first bonds form a first column arranged along the lead arrangement direction, and a second column arranged farther from the lead than the first column,
One of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire, and the other end of the lead rises from the first bond of the first row. Electrically connected to the second row of first bonds by a second wire having a raised portion higher than the portion;
The first bond in the first row is arranged to be shifted to the one lead side in the lead arrangement direction with respect to the first bond in the second row,
The first row first bond and the second row first bond are arranged such that a part thereof overlaps the longitudinal direction of the lead,
The loop height of the plurality of wires connected to the plurality of second bonds of each lead is set higher as the position of the second bond is directed from the leading end side to the rear side of each lead,
The first bond of the second lead closest to the first bond of the first row corresponding to the one lead among the second row of first bonds corresponding to the other lead is the most advanced second bond of the other lead. A semiconductor device characterized in that it is connected to other first bonds except for. 複数の電極パッドを形成した半導体チップの周囲に複数のリードが配列されると共に、前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち、複数本ずつが各リードの長手方向に複数設けられたセカンドボンドに接続されている半導体装置であって、
前記複数の電極パッド及びそのファーストボンドが、前記リードの配列方向に沿って並べられた第１列と、該第１列よりも前記リードから遠い位置に並べられた第２列とをなし、
相互に隣り合う前記リードの一方が、第１のワイヤーにより前記第１列のファーストボンドに電気接続されると共に、前記リードの他方が前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を有する第２のワイヤーにより第２列のファーストボンドに電気接続され、
前記第１のワイヤー及び第２のワイヤーのうち平面視で交差する２本のワイヤーの交差部を通過する前記リードの配列方向と平行な断面における前記２本のワイヤーの上下方向の間隔が、前記断面における当該第１のワイヤーと当該第２のワイヤーに隣接する他の第２のワイヤーとの上下方向の間隔、及び、前記断面における当該第２のワイヤーと当該第１のワイヤーに隣接する他の第１のワイヤーとの上下方向の間隔よりも広いことを特徴とする半導体装置。 A plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed, and a plurality of wires connected to each first bond on the plurality of electrode pads are arranged in the longitudinal direction of each lead. A semiconductor device connected to the provided second bond,
The plurality of electrode pads and their first bonds form a first column arranged along the lead arrangement direction, and a second column arranged farther from the lead than the first column,
One of the leads adjacent to each other is electrically connected to the first bond of the first row by a first wire, and the other end of the lead rises from the first bond of the first row. Electrically connected to the second row of first bonds by a second wire having a raised portion higher than the portion;
An interval in the vertical direction of the two wires in a cross section parallel to the arrangement direction of the leads passing through the intersecting portion of the two wires intersecting in plan view among the first wire and the second wire is The vertical distance between the first wire and the other second wire adjacent to the second wire in the cross section, and the other adjacent to the second wire and the first wire in the cross section. A semiconductor device characterized in that it is wider than an interval in the vertical direction with respect to the first wire. 複数の電極パッドを形成した半導体チップの周囲に複数のリードを配列し、
各リードが前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち複数本ずつと電気接続されるように、各リードにおける前記ワイヤーのセカンドボンドを各リードの先端側から後方側に前記ワイヤーのボンディング順序にあわせて並べると共に、前記ワイヤーのボンディング順序が遅くなる程、各リードのセカンドボンドに接続される前記ワイヤーのループ高さを高く設定し、
相互に隣り合う前記リードの一方に接続される第１のワイヤーを、前記リードの配列方向に並べられた第１列のファーストボンドの前記電極パッドに接続し、
前記リードの他方に接続される第２のワイヤーを、前記第１列のファーストボンドよりも前記リードから遠い位置に並べられると共に、前記第１列のファーストボンドの一部と前記リードの長手方向に重なるように、前記第１列のファーストボンドよりも前記リードの配列方向に沿って前記他方のリード側にずらして配される第２列のファーストボンドの前記電極パッドに接続し、前記第２のワイヤーに、前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を形成するワイヤーボンディング方法であって、
前記一方のリードのセカンドボンドと前記第１列の両端のファーストボンドとの間にそれぞれ前記第１のワイヤーを配した後に、前記一方のリードのセカンドボンドと前記両端のファーストボンドの中間に位置する前記第１列の他のファーストボンドとの間に前記第１のワイヤーを配することを特徴とするワイヤーボンディング方法。 A plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed,
The second bond of the wire in each lead is moved from the front end side of each lead to the rear side so that each lead is electrically connected to a plurality of wires connected to each first bond on the plurality of electrode pads. Rutotomoni arranged in accordance with the bonding order of the wire, the greater the bonding order of the wires becomes slower, and set a high loop height of the wire to be connected to the leads of the second bond,
A first wire connected to one of the leads adjacent to each other is connected to the electrode pads of the first bond in the first row arranged in the arrangement direction of the leads,
A second wire connected to the other of said leads, the longitudinal direction of the first row than first bonding arranged at a position far from the lead Rutotomoni, wherein a portion of the first row first bonding lead Connected to the electrode pad of the first bond in the second row arranged so as to be shifted to the other lead side along the arrangement direction of the leads from the first bond in the first row so as to overlap with the first row, A wire bonding method of forming a rising portion higher than the rising portion of the first wire rising from the first bond of the first row on the wire of the first row,
The first wire is disposed between the second bond of the one lead and the first bond at both ends of the first row, and then is positioned between the second bond of the one lead and the first bond at both ends. The wire bonding method, wherein the first wire is arranged between the first first bond and the other first bond. 複数の電極パッドを形成した半導体チップの周囲に複数のリードを配列し、
各リードが前記複数の電極パッド上の各ファーストボンドに接続されたワイヤーのうち複数本ずつと電気接続されるように、各リードにおける前記ワイヤーのセカンドボンドを各リードの先端側から後方側に前記ワイヤーのボンディング順序にあわせて並べると共に、前記ワイヤーのボンディング順序が遅くなる程、各リードのセカンドボンドに接続される前記ワイヤーのループ高さを高く設定し、
相互に隣り合う前記リードの一方に接続される第１のワイヤーを、前記リードの配列方向に並べられた第１列のファーストボンドの前記電極パッドに接続し、
前記リードの他方に接続される第２のワイヤーを、前記第１列のファーストボンドよりも前記リードから遠い位置に並べられると共に、前記第１列のファーストボンドの一部と前記リードの長手方向に重なるように、前記第１列のファーストボンドよりも前記リードの配列方向に沿って前記他方のリード側にずらして配される第２列のファーストボンドの前記電極パッドに接続し、前記第２のワイヤーに、前記第１列のファーストボンドから立ち上がる前記第１のワイヤーの立ち上がり部よりも高い立ち上がり部を形成するワイヤーボンディング方法であって、
前記第２列の両端のファーストボンドの中間に位置する他のファーストボンドと前記他方のリードのセカンドボンドとの間に前記第２のワイヤーを配した後に、前記両端のファーストボンドと前記他方のリードのセカンドボンドとの間に前記第２のワイヤーをそれぞれ配することを特徴とするワイヤーボンディング方法。
A plurality of leads are arranged around a semiconductor chip on which a plurality of electrode pads are formed,
The second bond of the wire in each lead is moved from the front end side of each lead to the rear side so that each lead is electrically connected to a plurality of wires connected to each first bond on the plurality of electrode pads. Rutotomoni arranged in accordance with the bonding order of the wire, the greater the bonding order of the wires becomes slower, and set a high loop height of the wire to be connected to the leads of the second bond,
A first wire connected to one of the leads adjacent to each other is connected to the electrode pads of the first bond in the first row arranged in the arrangement direction of the leads,
A second wire connected to the other of said leads, the longitudinal direction of the first row than first bonding arranged at a position far from the lead Rutotomoni, wherein a portion of the first row first bonding lead Connected to the electrode pad of the first bond in the second row arranged so as to be shifted to the other lead side along the arrangement direction of the leads from the first bond in the first row so as to overlap with the first row, A wire bonding method of forming a rising portion higher than the rising portion of the first wire rising from the first bond of the first row on the wire of the first row,
After arranging the second wire between the other first bond located in the middle of the first bond at both ends of the second row and the second bond of the other lead, the first bond at the both ends and the other lead A wire bonding method, wherein the second wires are respectively arranged between the second bonds.
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