JPH06302638A - Semiconductor device - Google Patents

Abstract

PURPOSE:To provide an electrically high reliability semiconductor device which prevents contact between adjacent bonding wires. CONSTITUTION:This invention relates to a semiconductor device 1 which comprises a semiconductor element 2 where an electrodes 21 are laid out on the top, a lead frame 3 which loads the semiconductor element 2 and arranges the tips of inner leads 31 around the semiconductor element 2 and a plurality of bonding wires 42 which are installed between the electrode pads 21 and the inner leads 31, forming an upwards curving loop. Lower loop wires 41 and higher loop wires 42 whose top heights are different from each other are laid out alternately. This semiconductor device 1 is also provided with connection positions for the lower loop wires 41 which are installed on the inner side of the connection positions for the higher loop wires 42.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which an electrode pad provided on the upper surface of a semiconductor element and a lead electrode provided on a base such as a lead frame are connected by a bonding wire.

[0002]

2. Description of the Related Art In a semiconductor device using a base composed of a lead frame, a chip-shaped semiconductor element is mounted on a die pad of a lead frame, an electrode pad provided on the upper surface of the semiconductor element and an inner lead of the lead frame. By connecting and with a bonding wire, the electrical wiring of the semiconductor element is formed. A plurality of leads extend from the package forming the appearance of such a semiconductor device, and the semiconductor device can be mounted by connecting the leads to a substrate or the like.

FIG. 3 is a schematic plan view for explaining a conventional semiconductor device. That is, the semiconductor device 1 mainly includes a chip-shaped semiconductor element 2 in which a predetermined electric circuit is formed, a lead frame 3 provided with an inner lead 31, an inner pad 31 and an electrode pad 21 of the semiconductor element 2. And a bonding wire 4 for electrically connecting to and.

In order to connect the electrode pad 21 provided on the upper surface of the semiconductor element 2 and the inner lead 31 of the lead frame 3 with the bonding wire 4, a wire bonding device (not shown) is first used to perform bonding as first bonding. One end of the wire 4 is connected to the electrode pad 21 by thermocompression bonding, and then the bonding wire 4 is pulled up and drawn toward the inner lead 31 so as to draw a loop of a predetermined height. After that, the other end of the bonding wire 4 is connected to the inner lead 31 as the second bonding. By making this connection between the plurality of electrode pads 21 and the inner leads 31, electrical wiring of the semiconductor element 2 is performed.

[0005]

However, as the semiconductor device becomes highly integrated, it is necessary to increase the wiring density of the bonding wires by narrowing the distance between the electrode pads provided on the semiconductor element and the distance between the inner leads of the lead frame. There is. Since the wiring density of the bonding wires is increased, the distance between the bonding wires adjacent to each other is narrowed, and the bonding wires are likely to contact each other. That is, FIG.
As shown in FIG. 3, when a force such as a twist is accumulated in the bonding wire 4, the bonding wire 4 bends in the lateral direction and comes into contact with the adjacent bonding wire 4 to cause an electrical inconvenience. Therefore, it is an object of the present invention to provide a semiconductor device with high electrical reliability in which adjacent bonding wires do not come into contact with each other.

[0006]

The present invention is a semiconductor device made to solve the above problems. That is, a semiconductor element having a plurality of electrode pads arranged on the upper surface, a base on which the semiconductor element is mounted and the tip of the lead electrode is arranged around the semiconductor element, a plurality of electrode pads and a plurality of lead electrodes A semiconductor device composed of a plurality of bonding wires each of which is connected to each other by drawing a curved loop upward, and as the bonding wires, a low loop wire and a high loop wire having different top heights are provided. Are arranged alternately. Further, it is also a semiconductor device in which the connection position between the electrode pad and the lead electrode in the low loop wire is provided inside the connection position between the electrode pad and the lead electrode in the high loop wire.

[0007]

As a bonding wire for electrically connecting the electrode pad provided on the semiconductor element and the lead electrode provided on the base, a low loop wire having different heights of the loops of the bonding wire is used. By providing the high loop wire and arranging them alternately, a difference in height occurs between the adjacent bonding wires. Furthermore, by providing the connection position between the electrode pad and the lead electrode in the low loop wire on the inner side than the connection position between the electrode pad and the lead electrode in the high loop wire, the crossing point in the side view direction of the bonding wire Disappears. Therefore, even if the bonding wire bends in the lateral direction, it does not contact the adjacent bonding wire.

[0008]

Embodiments of the semiconductor device of the present invention will be described below with reference to the drawings. 1A and 1B are views for explaining a semiconductor device of the present invention. FIG. 1A is a perspective view and FIG. 1B is a side view. In addition, in the following embodiments, for the sake of clarity, a case where the lead frame 3 is used as the base and the inner leads 31 of the lead frame 3 are used as the lead electrodes will be described. That is, this semiconductor device 1
As shown in FIG. 1A, the semiconductor element 2 is mainly in the form of a chip, the lead frame 3 for mounting the semiconductor element 2, the electrode pad 21 provided on the upper surface of the semiconductor element 2, and the lead frame. No. 3 inner lead 31 and a bonding wire composed of a low loop wire 41 and a high loop wire 42 for connecting to the inner lead 31.

Further, a resin (not shown) for sealing the semiconductor element 2, the bonding wires, and the inner leads 31 is provided, and the package appearance of the semiconductor device 1 is formed. Electrode pad 21 and inner lead 3
As described above, the low-loop wire 41 and the high-loop wire 42 are used as the bonding wires for connecting 1 and 1.
And are provided, and these are alternately arranged.

These bonding wires are shown in FIG.
As shown in (b), an upward curved loop is drawn between the electrode pad 21 and the inner lead 31 of the semiconductor element 2 to be connected. The low loop wire 41 has a height h from the upper surface of the semiconductor element 2 to the top of the loop, and the high loop wire 42 has a height H higher than the height h of the low loop wire 41. ing. By alternately arranging such low loop wires 41 and high loop wires 42, a difference in height occurs between adjacent bonding wires, and even if any one of the bonding wires bends in the lateral direction, No contact with the bonding wire.

In order to manufacture the semiconductor device 1 of the present invention, first, a predetermined semiconductor element 2 is mounted and connected on a die pad (not shown) of the lead frame 3. In this state, the plurality of inner leads 31 of the lead frame 3 are arranged around the semiconductor element 2. Next, the semiconductor element 2
A plurality of electrode pads 21 provided on the upper surface of the semiconductor chip and a plurality of inner leads 31 arranged around the semiconductor element 2 are connected by bonding wires. For this connection, using a wire bonding device (not shown), the low loop wire 41 is first connected, and then the high loop wire 42 is connected.

For example, the height h of the low loop wires 41 is set to 150 μm, and the low loop wires 41 are connected to the plurality of electrode pads 21 and the inner leads 31 arranged alternately. After every other low loop wire 41 is connected, for example, the height H of the high loop wires 42 is set to 400 μm, and the high loop wires 42 are connected to the remaining electrode pads 21 and the inner leads 31. It should be noted that the height of the bonding wire and the designation of the connection position can be easily changed by programming the wire bonding device in advance, and the existing wire bonding device can be sufficiently used. In this way, the low loop wires 41 and the high loop wires 42 are alternately arranged.

After connecting all the bonding wires, the semiconductor element 2, the bonding wires and the inner leads 31 are sealed with a potting resin, a molding resin or the like (not shown) to form the package appearance of the semiconductor device 1. When sealing with such a resin, the low loop wire 41 and the high loop wire 42 may be bent in the lateral direction due to the filling pressure of the resin, but since the heights are alternately different, they may come into contact with each other. There is no such thing.

Next, another example of the semiconductor device 1 of the present invention will be described. FIG. 2 is a diagram illustrating another example of a semiconductor device,
(A) is a plan view and (b) is a side view. As shown in FIG. 2A, this semiconductor device 1 has a high loop wire 4
The connection position of the low loop wire 41 is provided inside the connection position of 2. That is, the connection position B of the low loop wire 41 with the electrode pad 21 is provided closer to the inner lead 31 side than the connection position A of the high loop wire 42 with the electrode pad 21, and the inner side of the high loop wire 42 is provided. The connection position B ′ with the inner lead 31 of the low loop wire 41 is provided closer to the semiconductor element 2 side than the connection position A ′ with the lead 31.

By making such a connection, as shown in FIG.
In the side view direction as shown in, the low loop wire 4
Since there is no crossing point between 1 and the high loop wire 42 and there is a difference in height, even if one of them bends in the lateral direction, the adjacent bonding wires do not come into contact with each other. Further, as an example for making such a connection, the electrode pads 2 provided on the semiconductor element 2 are arranged in a zigzag pattern, and the tips of the inner leads 31 of the lead frame 3 are opposite to the electrode pads 21. Inner leads 31 arranged in a staggered pattern and corresponding to the electrode pads 21.
The low loop wire 41 may be connected to the side where the distance between and becomes narrower, and the high loop wire 42 may be connected to the side where the distance becomes wider.

In any of the embodiments, there is no danger that adjacent bonding wires will come into contact with each other, and electrical reliability will be improved. In this embodiment, in connecting the bonding wires, the low loop wire 41 is first connected and then the high loop wire 42 is connected. However, the present invention is not limited to this, and the bonding wires adjacent to each other are connected. It suffices if the connections can be made efficiently so that there is a difference in height.

In this embodiment, the lead frame 3 is used as the base and the inner lead 31 is used as the lead electrode.
In the case of C, a printed wiring board is used as the base and a wiring pattern formed on the printed wiring board is used as the lead electrodes. That is, the semiconductor element 2 is mounted on the printed wiring board, and the electrode pad 21 of the semiconductor element 2 and the wiring pattern on the printed wiring board are formed by using the low loop wire 41 and the high loop wire 42 as described above. Just connect.

[0018]

As described above, the semiconductor device of the present invention has the following effects. That is, since the low loop wire and the high loop wire having different heights are alternately arranged, even if the bonding wire bends in the lateral direction, it does not come into contact with the adjacent bonding wire. Therefore, the wiring density of the bonding wires is increased, and even if the distance between the bonding wires adjacent to each other is narrowed, no contact occurs, and it is possible to achieve high integration, downsizing, and high pin count of the semiconductor device. The electrical reliability will be improved.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a semiconductor device of the present invention, in which (a) is a perspective view and (b) is a side view.

FIG. 2 is a diagram illustrating another example of the present invention, (a) is a plan view and (b) is a side view.

FIG. 3 is a schematic plan view illustrating a conventional semiconductor device.

[Explanation of symbols]

 1 Semiconductor Device 2 Semiconductor Element 3 Lead Frame 4 Bonding Wire 21 Electrode Pad 31 Inner Lead 41 Low Loop Wire 42 High Loop Wire

Claims (2)

[Claims] 1. A semiconductor element having a plurality of electrode pads arranged on an upper surface, and a plurality of lead electrodes, wherein a tip of the lead electrode is arranged around the semiconductor element with the semiconductor element mounted. A semiconductor device comprising a base, and a plurality of bonding wires connected between the plurality of electrode pads and the plurality of lead electrodes by drawing a curved loop upward, wherein the bonding wires include: A low loop wire and a high loop wire having different heights of the top of a bonding wire are provided, and the low loop wire and the high loop wire are alternately arranged. 2. The connection position between the electrode pad and the lead electrode in the low loop wire is provided inside the connection position between the electrode pad and the lead electrode in the high loop wire. The semiconductor device according to claim 1.