JP4961561B2 - 有機ケイ素化合物とカーボンナノチューブの複合材及びその製造方法 - Google Patents
有機ケイ素化合物とカーボンナノチューブの複合材及びその製造方法 Download PDFInfo
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- JP4961561B2 JP4961561B2 JP2007501585A JP2007501585A JP4961561B2 JP 4961561 B2 JP4961561 B2 JP 4961561B2 JP 2007501585 A JP2007501585 A JP 2007501585A JP 2007501585 A JP2007501585 A JP 2007501585A JP 4961561 B2 JP4961561 B2 JP 4961561B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 56
- 239000002041 carbon nanotube Substances 0.000 title claims description 55
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 55
- 239000002131 composite material Substances 0.000 title claims description 48
- 150000003961 organosilicon compounds Chemical class 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title description 13
- 239000002109 single walled nanotube Substances 0.000 claims description 33
- 150000003377 silicon compounds Chemical class 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Carbon And Carbon Compounds (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
上記工程で製造された上記実施例である有機ケイ素化合物の複合材(SWNTs/l)の電界放出能を、複合化する前のSWNTs(従来のSWNTs)と比較して確認するために、上記実施例で得られた複合材と複合化前のSWNTsについて、それぞれ「電界放出IV特性」を測定した。
Claims (7)
- カーボンナノチューブに有機ケイ素化合物を添加して得られる複合材であって、カーボンナノチューブに比較して低い電圧で電界放出能を有することを特徴とする有機ケイ素化合物とカーボンナノチューブの複合材。
- カーボンナノチューブに有機ケイ素化合物を溶媒を用いて混合し、乾燥して得られる複合材であって、カーボンナノチューブに比較して低い電圧で電界放出能を有することを特徴とする有機ケイ素化合物とカーボンナノチューブの複合材。
- 基盤上のカーボンナノチューブに有機ケイ素化合物が添加されることにより形成され、電界放出源の構成部品として利用されることを特徴とする有機ケイ素化合物とカーボンナノチューブの複合材。
- 前記カーボンナノチューブは、単層カーボンナノチューブであることを特徴とする請求項1、2又は3に記載の有機ケイ素化合物とカーボンナノチューブの複合材。
- 請求項1〜4のいずれかに記載の複合材から構成され、電界放出源の構成部品として利用されることを特徴とする基盤。
- カーボンナノチューブに有機ケイ素化合物を溶媒を用いて混合して乾燥し、カーボンナノチューブに比較して低い電圧で電界放出能を有する有機ケイ素化合物とカーボンナノチューブの複合材を製造する方法。
- 基盤上のカーボンナノチューブに有機ケイ素化合物を添加することにより、電界放出源の構成部品として利用する有機ケイ素化合物とカーボンナノチューブの複合材を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64914505P | 2005-02-03 | 2005-02-03 | |
US60/649,145 | 2005-02-03 | ||
PCT/JP2006/301639 WO2006082837A1 (ja) | 2005-02-03 | 2006-02-01 | 有機ケイ素化合物とカーボンナノチューブの複合材及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2006082837A1 JPWO2006082837A1 (ja) | 2008-06-26 |
JP4961561B2 true JP4961561B2 (ja) | 2012-06-27 |
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JP2007501585A Active JP4961561B2 (ja) | 2005-02-03 | 2006-02-01 | 有機ケイ素化合物とカーボンナノチューブの複合材及びその製造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP4961561B2 (ja) |
WO (1) | WO2006082837A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001096499A (ja) * | 1999-07-15 | 2001-04-10 | Lucent Technol Inc | ナノスケール構造体アセンブリ、電界放出装置、マイクロ波真空管増幅器、ディスプレイ装置、及び電界放出構造体の製造方法 |
JP2001236875A (ja) * | 2000-02-23 | 2001-08-31 | Japan Science & Technology Corp | 電界放出型電子源及びそのカーボンナノチューブの製造方法 |
JP2005075725A (ja) * | 2003-09-01 | 2005-03-24 | Samsung Sdi Co Ltd | カーボンナノチューブ構造体及びその製造方法とそれを応用した電界放出素子及び表示装置 |
JP2005138204A (ja) * | 2003-11-05 | 2005-06-02 | Kaken:Kk | 超微粒子担持炭素材料とその製造方法および担持処理装置 |
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2006
- 2006-02-01 WO PCT/JP2006/301639 patent/WO2006082837A1/ja not_active Application Discontinuation
- 2006-02-01 JP JP2007501585A patent/JP4961561B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001096499A (ja) * | 1999-07-15 | 2001-04-10 | Lucent Technol Inc | ナノスケール構造体アセンブリ、電界放出装置、マイクロ波真空管増幅器、ディスプレイ装置、及び電界放出構造体の製造方法 |
JP2001236875A (ja) * | 2000-02-23 | 2001-08-31 | Japan Science & Technology Corp | 電界放出型電子源及びそのカーボンナノチューブの製造方法 |
JP2005075725A (ja) * | 2003-09-01 | 2005-03-24 | Samsung Sdi Co Ltd | カーボンナノチューブ構造体及びその製造方法とそれを応用した電界放出素子及び表示装置 |
JP2005138204A (ja) * | 2003-11-05 | 2005-06-02 | Kaken:Kk | 超微粒子担持炭素材料とその製造方法および担持処理装置 |
Also Published As
Publication number | Publication date |
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WO2006082837A1 (ja) | 2006-08-10 |
JPWO2006082837A1 (ja) | 2008-06-26 |
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