JP4955433B2 - 偏向器アレイ、露光装置及びデバイス製造方法 - Google Patents

偏向器アレイ、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4955433B2
JP4955433B2 JP2007072970A JP2007072970A JP4955433B2 JP 4955433 B2 JP4955433 B2 JP 4955433B2 JP 2007072970 A JP2007072970 A JP 2007072970A JP 2007072970 A JP2007072970 A JP 2007072970A JP 4955433 B2 JP4955433 B2 JP 4955433B2
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exposure apparatus
deflection
deflector
substrate
electron beam
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Japanese (ja)
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JP2008235571A (ja
JP2008235571A5 (enrdf_load_stackoverflow
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和彦 加藤
義則 中山
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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JP2007072970A 2007-03-20 2007-03-20 偏向器アレイ、露光装置及びデバイス製造方法 Active JP4955433B2 (ja)

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JP2007072970A JP4955433B2 (ja) 2007-03-20 2007-03-20 偏向器アレイ、露光装置及びデバイス製造方法

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JP2007072970A JP4955433B2 (ja) 2007-03-20 2007-03-20 偏向器アレイ、露光装置及びデバイス製造方法

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JP2008235571A JP2008235571A (ja) 2008-10-02
JP2008235571A5 JP2008235571A5 (enrdf_load_stackoverflow) 2010-05-20
JP4955433B2 true JP4955433B2 (ja) 2012-06-20

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5679774B2 (ja) * 2010-11-09 2015-03-04 キヤノン株式会社 偏向器アレイ、荷電粒子描画装置、デバイス製造方法、偏向器アレイの製造方法
TWI578364B (zh) * 2014-09-03 2017-04-11 Nuflare Technology Inc Inspection method of masking device with multiple charged particle beam
JP6965222B2 (ja) * 2018-09-14 2021-11-10 株式会社東芝 半導体装置
TWI856626B (zh) 2022-05-13 2024-09-21 日商紐富來科技股份有限公司 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922369B2 (ja) * 1979-09-14 1984-05-26 株式会社日立製作所 電子線描画装置
JPS6132422A (ja) * 1984-07-24 1986-02-15 Hitachi Ltd 電子線描画装置
JPS6439022A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Electron beam system
JPH05190432A (ja) * 1992-01-17 1993-07-30 Fujitsu Ltd 荷電粒子線露光装置
JP2000260382A (ja) * 1999-03-11 2000-09-22 Jeol Ltd 荷電粒子ビーム装置

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