JP4953559B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4953559B2
JP4953559B2 JP2004123644A JP2004123644A JP4953559B2 JP 4953559 B2 JP4953559 B2 JP 4953559B2 JP 2004123644 A JP2004123644 A JP 2004123644A JP 2004123644 A JP2004123644 A JP 2004123644A JP 4953559 B2 JP4953559 B2 JP 4953559B2
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layer
substrate
nitride semiconductor
region
type
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Japanese (ja)
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JP2005310928A (ja
JP2005310928A5 (https=
Inventor
拓明 松村
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Nichia Corp
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Nichia Corp
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JP2004123644A 2004-04-20 2004-04-20 窒化物半導体レーザ素子 Expired - Fee Related JP4953559B2 (ja)

Priority Applications (1)

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JP2004123644A JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

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JP2004123644A JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

Publications (3)

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JP2005310928A JP2005310928A (ja) 2005-11-04
JP2005310928A5 JP2005310928A5 (https=) 2007-05-24
JP4953559B2 true JP4953559B2 (ja) 2012-06-13

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JP2004123644A Expired - Fee Related JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

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Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法

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JP2005310928A (ja) 2005-11-04

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