JP4939737B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP4939737B2 JP4939737B2 JP2004225146A JP2004225146A JP4939737B2 JP 4939737 B2 JP4939737 B2 JP 4939737B2 JP 2004225146 A JP2004225146 A JP 2004225146A JP 2004225146 A JP2004225146 A JP 2004225146A JP 4939737 B2 JP4939737 B2 JP 4939737B2
- Authority
- JP
- Japan
- Prior art keywords
- tft
- potential
- light emitting
- emitting element
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 229910052782 aluminium Inorganic materials 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
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- 238000002347 injection Methods 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- 239000011521 glass Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
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- 229910017073 AlLi Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
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- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- -1 Tungsten nitride Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- 238000005070 sampling Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004225146A JP4939737B2 (ja) | 2003-08-08 | 2004-08-02 | 発光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003289569 | 2003-08-08 | ||
JP2003289569 | 2003-08-08 | ||
JP2004225146A JP4939737B2 (ja) | 2003-08-08 | 2004-08-02 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011170973A Division JP2012008582A (ja) | 2003-08-08 | 2011-08-04 | 発光装置及び電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005092188A JP2005092188A (ja) | 2005-04-07 |
JP2005092188A5 JP2005092188A5 (enrdf_load_stackoverflow) | 2007-09-06 |
JP4939737B2 true JP4939737B2 (ja) | 2012-05-30 |
Family
ID=34466751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004225146A Expired - Fee Related JP4939737B2 (ja) | 2003-08-08 | 2004-08-02 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4939737B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015129969A (ja) * | 2003-08-08 | 2015-07-16 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5007491B2 (ja) | 2005-04-14 | 2012-08-22 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
JP5240534B2 (ja) * | 2005-04-20 | 2013-07-17 | カシオ計算機株式会社 | 表示装置及びその駆動制御方法 |
KR20070030620A (ko) * | 2005-09-13 | 2007-03-16 | 삼성에스디아이 주식회사 | 전극 증착방법 및 이로써 제조된 유기 발광 표시장치 |
KR101171188B1 (ko) | 2005-11-22 | 2012-08-06 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
JP5364235B2 (ja) * | 2005-12-02 | 2013-12-11 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8004481B2 (en) | 2005-12-02 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP5240542B2 (ja) * | 2006-09-25 | 2013-07-17 | カシオ計算機株式会社 | 表示駆動装置及びその駆動方法、並びに、表示装置及びその駆動方法 |
JP2008286897A (ja) * | 2007-05-16 | 2008-11-27 | Sony Corp | 表示装置、表示装置の駆動方法および電子機器 |
JP5309470B2 (ja) | 2007-05-21 | 2013-10-09 | ソニー株式会社 | 表示装置及びその駆動方法と電子機器 |
KR101396698B1 (ko) * | 2007-08-21 | 2014-05-19 | 엘지디스플레이 주식회사 | 전계 발광 화소와 이를 구비한 표시 패널 및 표시장치 |
TWI831050B (zh) | 2008-11-07 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
US9806098B2 (en) * | 2013-12-10 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
KR102738329B1 (ko) * | 2020-10-30 | 2024-12-04 | 엘지디스플레이 주식회사 | 표시패널과 이를 이용한 표시장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10312173A (ja) * | 1997-05-09 | 1998-11-24 | Pioneer Electron Corp | 画像表示装置 |
JP2000268957A (ja) * | 1999-03-18 | 2000-09-29 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2001109432A (ja) * | 1999-10-06 | 2001-04-20 | Pioneer Electronic Corp | アクティブマトリックス型発光パネルの駆動装置 |
JP4869497B2 (ja) * | 2001-05-30 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP4052865B2 (ja) * | 2001-09-28 | 2008-02-27 | 三洋電機株式会社 | 半導体装置及び表示装置 |
JP2003186437A (ja) * | 2001-12-18 | 2003-07-04 | Sanyo Electric Co Ltd | 表示装置 |
JP2003195810A (ja) * | 2001-12-28 | 2003-07-09 | Casio Comput Co Ltd | 駆動回路、駆動装置及び光学要素の駆動方法 |
-
2004
- 2004-08-02 JP JP2004225146A patent/JP4939737B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015129969A (ja) * | 2003-08-08 | 2015-07-16 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
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JP2005092188A (ja) | 2005-04-07 |
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