JP4935788B2 - 圧電薄膜共振子およびその製造方法 - Google Patents
圧電薄膜共振子およびその製造方法 Download PDFInfo
- Publication number
- JP4935788B2 JP4935788B2 JP2008253515A JP2008253515A JP4935788B2 JP 4935788 B2 JP4935788 B2 JP 4935788B2 JP 2008253515 A JP2008253515 A JP 2008253515A JP 2008253515 A JP2008253515 A JP 2008253515A JP 4935788 B2 JP4935788 B2 JP 4935788B2
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- Prior art keywords
- top electrode
- electrode
- thin film
- piezoelectric
- support frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000010409 thin film Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 23
- 238000007599 discharging Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000001788 irregular Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253515A JP4935788B2 (ja) | 2008-09-30 | 2008-09-30 | 圧電薄膜共振子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253515A JP4935788B2 (ja) | 2008-09-30 | 2008-09-30 | 圧電薄膜共振子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006104021A Division JP2007281757A (ja) | 2006-04-05 | 2006-04-05 | 圧電薄膜共振子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009044755A JP2009044755A (ja) | 2009-02-26 |
| JP2009044755A5 JP2009044755A5 (https=) | 2009-05-21 |
| JP4935788B2 true JP4935788B2 (ja) | 2012-05-23 |
Family
ID=40444914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253515A Expired - Fee Related JP4935788B2 (ja) | 2008-09-30 | 2008-09-30 | 圧電薄膜共振子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4935788B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114978094B (zh) * | 2022-05-16 | 2024-11-15 | 武汉敏声新技术有限公司 | 一种体声波谐振器及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS645095A (en) * | 1987-06-26 | 1989-01-10 | Tdk Corp | Formation of conductive pattern |
| US6150703A (en) * | 1998-06-29 | 2000-11-21 | Trw Inc. | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
| JP2002374144A (ja) * | 2001-06-15 | 2002-12-26 | Ube Electronics Ltd | 薄膜圧電共振器 |
| JP2005318477A (ja) * | 2004-04-30 | 2005-11-10 | Seiko Epson Corp | 圧電振動片、その電極形成方法、及び圧電デバイス |
| EP1887688A4 (en) * | 2005-06-02 | 2009-08-05 | Murata Manufacturing Co | PIEZOELECTRIC RESONATOR AND PIEZOELECTRIC THIN-FILTER FILTER |
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2008
- 2008-09-30 JP JP2008253515A patent/JP4935788B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009044755A (ja) | 2009-02-26 |
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