JP4929347B2 - Ｐｉｆプロービング構成を用いるプラズマ処理の制御 - Google Patents

Ｐｉｆプロービング構成を用いるプラズマ処理の制御 Download PDF

Info

Publication number
JP4929347B2
JP4929347B2 JP2009504429A JP2009504429A JP4929347B2 JP 4929347 B2 JP4929347 B2 JP 4929347B2 JP 2009504429 A JP2009504429 A JP 2009504429A JP 2009504429 A JP2009504429 A JP 2009504429A JP 4929347 B2 JP4929347 B2 JP 4929347B2
Authority
JP
Japan
Prior art keywords
time
plasma
probe
pif
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009504429A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009532916A (ja
Inventor
ケイル，ダグラス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2009532916A publication Critical patent/JP2009532916A/ja
Application granted granted Critical
Publication of JP4929347B2 publication Critical patent/JP4929347B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2009504429A 2006-04-04 2007-04-03 Ｐｉｆプロービング構成を用いるプラズマ処理の制御 Expired - Fee Related JP4929347B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/398,306 2006-04-04
US11/398,306 US7413672B1 (en) 2006-04-04 2006-04-04 Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
PCT/US2007/065890 WO2007121087A2 (en) 2006-04-04 2007-04-03 Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement

Publications (2)

Publication Number Publication Date
JP2009532916A JP2009532916A (ja) 2009-09-10
JP4929347B2 true JP4929347B2 (ja) 2012-05-09

Family

ID=38610299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009504429A Expired - Fee Related JP4929347B2 (ja) 2006-04-04 2007-04-03 Ｐｉｆプロービング構成を用いるプラズマ処理の制御

Country Status (8)

Country Link
US (1) US7413672B1 (ko)
EP (1) EP2016204A4 (ko)
JP (1) JP4929347B2 (ko)
KR (1) KR101355728B1 (ko)
CN (1) CN101460656B (ko)
MY (1) MY147900A (ko)
TW (1) TWI411035B (ko)
WO (1) WO2007121087A2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7728602B2 (en) * 2007-02-16 2010-06-01 Mks Instruments, Inc. Harmonic derived arc detector
US8849585B2 (en) * 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
CN102084474B (zh) * 2008-07-07 2012-11-14 朗姆研究公司 在等离子体处理室中检测去夹紧的电容耦合静电(cce)探针装置及其方法
WO2010005933A2 (en) 2008-07-07 2010-01-14 Lam Research Corporation Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber
US8164353B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber
TWI494030B (zh) * 2008-07-07 2015-07-21 Lam Res Corp 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置
CN104320899A (zh) * 2008-07-07 2015-01-28 朗姆研究公司 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法
KR101606734B1 (ko) 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (ｃｃｅ) 프로브 장치
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8271121B2 (en) * 2009-06-30 2012-09-18 Lam Research Corporation Methods and arrangements for in-situ process monitoring and control for plasma processing tools
US8295966B2 (en) * 2009-06-30 2012-10-23 Lam Research Corporation Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8538572B2 (en) 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
CN102804929B (zh) * 2009-06-30 2015-11-25 朗姆研究公司 用于处理室的预测性预防性维护的方法和装置
IES20090733A2 (en) * 2009-09-22 2011-03-30 Donal O'sullivan Sensor for measuring plasma parameters
US20120283973A1 (en) * 2011-05-05 2012-11-08 Imec Plasma probe and method for plasma diagnostics
US9383460B2 (en) 2012-05-14 2016-07-05 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor
US9535100B2 (en) 2012-05-14 2017-01-03 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor and method for using same
US9595424B2 (en) 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761414B2 (en) 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371943A (en) * 1980-10-06 1983-02-01 General Dynamics Corporation/Convair Div. External means for detecting normal zones in superconducting magnets or coils
JP3292531B2 (ja) * 1993-01-15 2002-06-17 忠弘 大見 高周波励起プラズマの計測装置
FR2738984B1 (fr) 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
JP2005149761A (ja) * 2003-11-11 2005-06-09 Sony Corp プラズマ発生用の電源装置

Also Published As

Publication number Publication date
JP2009532916A (ja) 2009-09-10
WO2007121087B1 (en) 2008-10-02
TWI411035B (zh) 2013-10-01
WO2007121087A3 (en) 2008-05-22
CN101460656A (zh) 2009-06-17
WO2007121087A2 (en) 2007-10-25
EP2016204A4 (en) 2014-04-09
KR20090007394A (ko) 2009-01-16
TW200809958A (en) 2008-02-16
CN101460656B (zh) 2011-07-13
KR101355728B1 (ko) 2014-01-27
EP2016204A2 (en) 2009-01-21
US7413672B1 (en) 2008-08-19
MY147900A (en) 2013-01-31

Similar Documents

Publication Publication Date Title
JP4929347B2 (ja) Ｐｉｆプロービング構成を用いるプラズマ処理の制御
JP4508423B2 (ja) プラズマ処理システムにおいてエッチング終点を決定するための方法および装置
KR101355741B1 (ko) 플라즈마 프로세싱 반응기의 오류 상태를 검출하기 위한 방법 및 장치
CN102484062B (zh) 测量晶片偏压的方法与装置
KR101366470B1 (ko) 플라즈마 처리 챔버 내에서 언컨파인먼트를 감지하는 방법 및 장치
KR101606736B1 (ko) 플라즈마 프로세싱 챔버에서 플라즈마 불안정성을 검출하기 위한 패시브 용량성-결합된 정전식 (ｃｃｅ) 프로브 장치
US20120248310A1 (en) Ion energy analyzer
KR20070020226A (ko) Ｖ-ｉ프로브 진단을 이용한 플라즈마 에칭 종료점 검출방법
US5025135A (en) Circuit configuration for the recognition of a plasma
JPWO2002059954A1 (ja) プラズマ処理装置およびプラズマ処理方法
US10964515B2 (en) Plasma diagnostic system and method
JP2005156452A5 (ko)
JP2005156452A (ja) ガス絶縁電気装置の部分放電診断方法
JP2893391B2 (ja) プラズマパラメータ測定装置
de Castro et al. End-point detection of polymer etching using Langmuir probes
KR101787876B1 (ko) 정전용량 변화를 이용한 플라즈마 밀도 측정 방법 및 장치, 그리고 측정용 탐침
KR20100106088A (ko) 플라즈마 진단장치
JP2011113917A (ja) プラズマ監視用プローブ、プラズマ監視装置及びプラズマ処理装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100405

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100405

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100601

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110909

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110913

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111209

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120124

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120213

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150217

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees