JP4925790B2 - Liquid crystal panel manufacturing apparatus and liquid crystal panel manufacturing method - Google Patents

Description

  The present invention relates to a liquid crystal panel manufacturing apparatus and a method for manufacturing a liquid crystal panel using the same.

Liquid crystal panels have been used for various applications because they have high display quality and can be reduced in thickness and power consumption. In recent years, demand for large-sized liquid crystal devices such as liquid crystal televisions has been increasing recently, and devices with high performance have been desired.

In order to obtain a high-performance liquid crystal panel, alignment control of the alignment film is important. Conventionally, the “rubbing method” or the like in which the alignment film is rubbed with a cloth has been generally used. However, when the rubbing method is used, dust falls and dirt is attached, or a semiconductor element is damaged due to static electricity or the like. Since there is a problem, an alignment control technique called “optical alignment method” is known as an alternative to the rubbing method (see, for example, Patent Document 1).

In a liquid crystal panel manufacturing method using a photo-alignment method, for example, ultraviolet light is irradiated from the outside of a substrate to be processed in which a liquid crystal body and a photoreactive substance are sandwiched between two substrates, and the photoreactive substance is chemically treated. There is a technique for forming an alignment film inside a substrate to be processed by reaction.

However, when a substrate to be processed in which a liquid crystal body and a photoreactive substance are sealed is irradiated with a large amount of ultraviolet light having a wavelength less than a certain wavelength, the liquid crystal body and the photoreactive substance in the substrate to be processed are deteriorated. Furthermore, when the substrate to be processed is irradiated with ultraviolet rays from a plurality of lamps, unevenness of irradiation tends to occur on the substrate to be processed.
The performance and yield of the liquid crystal panel are reduced. In order to manufacture a liquid crystal panel with high performance and high yield, it is necessary to monitor the illuminance of ultraviolet rays applied to the surface of the substrate to be processed.

Japanese Patent No. 3163357

The present invention provides a liquid crystal panel manufacturing apparatus capable of suppressing deterioration of a liquid crystal body and a photoreactive substance and monitoring the illuminance of ultraviolet rays irradiated on the surface of a substrate to be processed, and a method of manufacturing a liquid crystal panel using the same.

According to an aspect of the present invention, a processing chamber for processing a substrate to be processed in which a liquid crystal body containing a photoreactive substance is enclosed, and a processing chamber are disposed, and the substrate is irradiated with ultraviolet rays to be photoreactive. A plurality of lamps for reacting a substance to form an alignment portion inside the substrate to be processed, and facing the lamps;
A filter that suppresses the transmission of ultraviolet rays in a wavelength region of 340 nm or less, an illuminometer that measures the illuminance of the plurality of lamps, and a plurality of lamps so that the illuminance uniformity on the ultraviolet irradiation surface of the substrate to be processed is 75% or more. There is provided a liquid crystal panel manufacturing apparatus comprising a lamp control device for controlling the power of the lamp.

According to another aspect of the present invention, the power of a plurality of lamps is adjusted so that the illuminance uniformity on the ultraviolet irradiation surface of the substrate to be processed encapsulating a liquid crystal containing a photoreactive substance is 75% or more. Provided is a liquid crystal panel manufacturing method in which an ultraviolet ray is irradiated through a filter that suppresses transmission of ultraviolet rays having a wavelength region of 340 nm or less while being controlled, and a photoreactive substance is reacted to form an alignment portion inside a substrate to be processed. The

ADVANTAGE OF THE INVENTION According to this invention, the liquid crystal panel manufacturing apparatus which can suppress deterioration of a liquid crystal body and a photoreactive substance, and can monitor the illumination intensity of the ultraviolet-ray irradiated to the surface of a to-be-processed substrate, and the manufacturing method of a liquid crystal panel using the same are provided. it can.

Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. The embodiment shown below is
The apparatus and method for embodying the technical idea of the present invention are illustrated, and the technical idea of the present invention does not specify the structure, arrangement, etc. of the component parts as follows.

-Substrate-
A substrate 10 to be processed that can be processed using the liquid crystal panel manufacturing apparatus according to the embodiment of the present invention will be described. As illustrated in FIG. 1, a substrate to be processed 10 includes a liquid crystal body 17 having orientation by applying a voltage between a first substrate 12 and a second substrate 14 made of glass or the like, and a photoreaction having photoreactivity. The active substance (polymer) 18 is at least enclosed.

Examples of the liquid crystal body 17 include ester-based, biphenyl-based, phenylcyclohexane (
PCH) -based, cyclohexane-based, phenylpyridimine-based, and dioxane-based base materials are used. The base material is preferably blended depending on the application. As the liquid crystal material capable of reducing the driving voltage, a P-ester-based material, a P-biphenyl-based material, or the like is preferable. As a liquid crystal material that can withstand high temperatures and operate stably, a tricyclic or tetracyclic base material is suitable. As a liquid crystal material that improves responsiveness and is suitable for displaying moving images or the like, a PCH-based or biphenyl-based material is preferable.

As the polymer 18, for example, a polymer material having an azo compound (azobenzene) as shown in FIG. 2 is used. A polymer material having an azo compound is UV, particularly in the wavelength region 300
It polymerizes by irradiating with ultraviolet rays of ˜400 nm to form a crosslinked structure. As shown in FIG. 1, the first substrate 12 and the second substrate 14 are bonded together by a seal portion 19.

A plurality of semiconductor elements 11 such as thin film transistors (TFTs) are arranged on the surface of the first substrate 12. A first transparent electrode 15 is formed on the array of the plurality of semiconductor elements 11. On the other hand, the color filter 13 is disposed on the surface of the second substrate 14. A second transparent electrode 16 is formed on the surface of the color filter 13.

FIG. 3 shows an example of the processing intermediate (liquid crystal panel) 20 after the substrate 10 of FIG. 1 is irradiated with ultraviolet rays. When a liquid crystal panel manufacturing apparatus, which will be described later, is used to irradiate ultraviolet rays in a state where a voltage is applied to the substrate to be processed 10 in FIG. 1, for example, convex alignment portions are formed on the surfaces of the first transparent electrode 15 and the second transparent electrode 16. 21 and 22 are formed, respectively.

The alignment portions 21 and 22 are cross-linked structures obtained by polymerizing the polymer body 18 of FIG. 1 by light irradiation, and are arranged in parallel with each other in a certain direction of the first substrate 12 as shown in FIG. Has been. As shown in FIG. 5, the rising angle θ of the alignment portion 21 as viewed from the upper surface of the first transparent electrode 15 can be changed by controlling the voltage applied to the substrate 10 to be processed, for example.

As illustrated in FIGS. 6 and 7, by arranging the alignment portions 21 and 22 on the surfaces of the first transparent electrode 15 and the second transparent electrode 16, the gaps (recess portions) between the alignment portions 21 and 22, respectively. The liquid crystal body 17 enters. Therefore, compared with the case where the alignment parts 21 and 22 are not formed inside the liquid crystal panel 20, the alignment regulating force of the liquid crystal body 17 is increased, and the response speed, transmittance, contrast,
Various performances and characteristics of the liquid crystal panel such as polarization characteristics can be improved.

-LCD panel manufacturing equipment-
(overall structure)
As shown in FIG. 8, the liquid crystal panel manufacturing apparatus according to the embodiment includes a carry-in section 2 that can store a plurality of substrates to be processed 10 and a reversal that inverts the top and bottom of the substrate 10 to be processed stored in the carry-in section 2. Unit 3, inspection unit 4 for inspecting the characteristics of the substrate to be processed 10 conveyed from reversing unit 3, and ultraviolet irradiation unit (UV irradiation unit) for irradiating ultraviolet rays onto substrate to be processed 10 conveyed from inspection unit 4 ) 5 and a reversing unit 6 for reversing the substrate 10 to be processed after being irradiated with the ultraviolet rays conveyed from the UV irradiation unit 5.

A transport robot 25 is disposed inside the carry-in unit 2. The transfer robot 25 is managed by a computer system (not shown) arranged under a table for placing the substrate 10 to be processed, and transfers the substrate 10 to be processed to the reversing unit 3.

The inspection unit 4 includes a first inspection device 4a and a second inspection device 4b. The first inspection device 4a and the second inspection device 4b apply a voltage to the substrate to be processed 10 and inspect the alignment state of the liquid crystal body 17 to determine whether or not the substrate to be processed 10 satisfies a predetermined quality standard. Inspect. In FIG. 8, two inspection apparatuses (the first inspection apparatus 4a and the second inspection apparatus 4b) are illustrated. However, the number of inspection apparatuses varies depending on the processing capability of the liquid crystal panel manufacturing apparatus shown in FIG. Also good.

The UV irradiation unit 5 includes a first UV irradiation device 5a and a second UV irradiation device 5b. The 1st UV irradiation apparatus 5a and the 2nd UV irradiation apparatus 5b irradiate the to-be-processed substrate 10 with an ultraviolet-ray. There may be any number of UV irradiation devices.

The substrate 10 is transferred from the reversing unit 3 to the inspection unit 4, the UV irradiation unit 5, and the reversing unit 6.
And the reversing unit 6 are performed by a transfer robot 62 provided on the path. Transport robot 6
2 is managed by a computer system (not shown) provided under the path of the transfer robot 62.

A display device 61 is disposed on the outer surface of the device. For example, the display device 61 can align the placement position of the substrate 10 to be processed conveyed to the inspection unit 4 and the UV irradiation unit 5. An ionizer 63 for removing static electricity or the like may be attached to the inner side surface of the liquid crystal panel manufacturing apparatus.

(Processing procedure)
When processing is performed using the liquid crystal panel manufacturing apparatus shown in FIG. 8, as shown in the flowchart of FIG. 9, in step S1, the substrate 10 is stored in the carry-in unit 2, and the transfer robot 25 of FIG. The substrate 10 to be processed is transferred from the carry-in unit 2 to the reversing unit 3.

9, the substrate 10 to be processed shown in FIG. 1 is turned upside down so that the first substrate 12 on the side on which the semiconductor element 11 is formed is upward, and the second on the side on which the color filter 13 is formed.
The substrate 14 is positioned downward. By reversing, since the lamp light is irradiated from the side of the first substrate 12 on the side where the semiconductor element 11 is formed in the UV irradiation unit 5, damage to the color filter can be suppressed. In addition, when the 1st board | substrate 12 exists above, it does not need to invert.

In step S <b> 3 of FIG. 9, the transfer robot 62 removes the substrate 10 from the reversing unit 3.
It is conveyed to the inspection unit 4. In the inspection unit 4, the substrate to be processed 10 is aligned by the display device 61 or the like, and the liquid crystal body 17 inside the substrate to be processed 10 is aligned by applying a voltage to determine whether the substrate to be processed 10 is good or bad. Substrate 1 to be processed determined as “defective” in the inspection in step S3
0 is transported from the inspection unit 4 to the outside of the apparatus by the transport robot 62 of FIG. Step S
The target substrate 10 evaluated as “good” in the inspection 3 is transferred from the inspection unit 4 to the UV irradiation unit 5 by the transfer robot 62.

In step S4, the UV irradiation unit 5 irradiates the substrate to be processed 10 with, for example, lamp light that emits a relatively large amount of ultraviolet light in the wavelength region of 340 to 400 nm compared to ultraviolet light in the wavelength region of 340 nm or less. As a result, the polymer body 18 enclosed in the substrate 10 to be processed is photoreacted (polymerized), and the alignment portions 21 and 22 are formed in the processing intermediate (liquid crystal panel) 20 as shown in FIG. To do. The liquid crystal panel 20 is conveyed from the UV irradiation unit 5 to the reversing unit 6, and is inverted upside down as necessary in the reversing unit 6 in step S <b> 5. Step S6
The liquid crystal panel 20 is conveyed from the reversing unit 6 to the outside of the liquid crystal panel manufacturing apparatus.

(Reversing part)
A schematic diagram showing an example of the reversing unit 3 is shown in FIG. The reversing unit 3 includes a first suction unit 31, a second suction unit 32, and a third suction unit 33 for vacuum suction of the substrate 10 to be processed. 1st adsorption part 31
Is arranged in the lower part of the processing chamber 30 and is moved up and down by a first movable part 34 connected to the first suction part 31. The second adsorption unit 32 is fixed to a rotating unit 35 disposed above the first adsorption unit 31. The third adsorption unit 33 is disposed in the upper part of the processing chamber, and the third adsorption unit 33
The second movable part 36 connected to the suction part 33 moves up and down.

When inverting the substrate 10 to be processed, first, as shown in FIG.
The substrate 10 to be processed is placed on the substrate 1. Then, the first movable portion 34 shown in FIG.
a), the first suction unit 31 is lifted up, and the substrate to be processed 10 is moved to the second position.
Approach the suction part 32. As shown in FIG. 11B, the first suction unit 31 and the second suction unit 32 are brought closer to each other, and the substrate 10 is transferred to the second suction unit 32. As illustrated in FIG. 11C, the rotating unit 35 is rotated, and the substrate 10 to be processed is disposed above the second suction unit 32. Thereafter, as shown in FIG. 11 (d), the third suction portion 33 is lifted down by the second movable portion 36 (not shown in FIG. 11 (d)) shown in FIG. 10, and shown in FIG. 11 (e). As described above, the substrate 10 to be processed is sucked below the third suction portion 33.

(Inspection unit)
As an example of the inspection unit 4, a schematic diagram showing a first inspection device 4a is shown in FIG. An installation table 41 for arranging the substrate to be processed 10 is arranged in the processing chamber 40, and a CCD camera 43 for inspecting the state of the substrate to be processed 10 is arranged above the installation table 41. ing. A backlight irradiation unit 42 is disposed below the installation table 41.

When inspecting the substrate 10 to be processed using the first inspection apparatus 4a, as shown in FIG. 13A, after the substrate 10 is placed on the installation table 41 by the transfer robot 62, the display shown in FIG. While confirming with the apparatus 61, the position of the substrate 10 to be processed (alignment) is adjusted using the CCD camera 43 shown in FIG. Thereafter, as shown in FIG. 13B, the application connector 44 is connected to the substrate 10 to be processed. As shown in FIG. 13C, the backlight irradiation unit 42 irradiates light from below the substrate 10 to be processed. As shown in FIG. 13 (d), the application connector 4
A voltage application unit 45 is connected to 4 and a constant voltage is applied from the voltage application unit 45. By applying the voltage, the liquid crystal inside the substrate 10 is aligned in a certain direction. Thereafter, as shown in FIG. 13 (e), the measurement region in the substrate to be processed 10 is appropriately selected, and the alignment state of the liquid crystal in the measurement region is confirmed by the CCD camera 43. Determine.

(UV irradiation part)
-Overall configuration-
As an example of the UV irradiation unit 5, a schematic diagram showing a first UV irradiation device 5a is shown in FIG. First
The UV irradiation apparatus 5a is disposed in the processing chamber 50 for processing the substrate to be processed 10 and the processing chamber 50. The UV irradiation device 5a irradiates the substrate to be processed 10 with ultraviolet rays, and aligns portions 21 and 22 (see FIG. 3) and a filter 53 that faces the lamp 52 and suppresses transmission of ultraviolet rays in a wavelength region of 340 nm or less. In FIG. 14, the plurality of lamps 52 are positioned above the processing chamber 50, but the positions of the lamps 52 may be appropriately changed according to the position of the substrate 10 to be processed.

Above the plurality of lamps 52, a reflecting mirror 57 for making the irradiation light from the lamps 52 uniform.
Are arranged respectively. As shown in FIG. 15, a plurality of auxiliary reflectors 58 may be disposed between the lamp 52 and the filter 53. In the example of FIG. 15, the auxiliary reflector 5
8, a sensor for detecting illuminance is arranged, and the angle of the auxiliary reflector 58 may be freely changed according to the detection result of the sensor. The sensor may be arranged on the stage 51 in FIG.

The arrangement interval of the plurality of lamps 52 is such that the inner diameter of the lamp is D and D is 25 mm or less.
By setting the center-to-center spacing (lamp pitch) of the plurality of lamps 52 to about 5D to 6D, it is possible to irradiate the substrate 10 with ultraviolet rays with less unevenness in illuminance intensity. D is 20
In the case of ˜33 mm, the lamp pitch can be 3D to 6D.

In the 1st UV irradiation apparatus 5a which concerns on embodiment illustrated in FIG. 14, a fixed objective can be achieved even if the lamp pitch is 7D-8D when the lamp external shape D is 27.5 mm. In addition, when the outer shape D ′ of the cooling pipe 100 described later (see FIG. 25) is 70 mm,
Even when the lamp pitch is 4D, uniform ultraviolet irradiation is possible.

As shown in FIG. 17, a first illuminance meter 55 and a second illuminance meter 56 for measuring the illuminance of the lamp 52 are located near the center of the lamp 52 when viewed from the longitudinal direction (axial direction) of the lamp 52. Has been placed. As shown in FIG. 14, the first illuminance meter 55 and the second illuminance meter 56 can be arranged one above each of the plurality of lamps 52. First illuminance meter 55 and second
The illuminance meter 56 is connected to the lamp control device 7, and the first illuminance meter 55 and the second illuminance meter 56.
The electric power of the lamp 52 can be controlled according to the illuminance value detected by. Lamp 5
Only one type of illuminometer may be arranged above 2.

As the first illuminometer 55, for example, an illuminometer having a peak sensitivity in a wavelength region of 340 to 370 nm can be used. Thereby, a light emission peak at a wavelength of 365 nm of the lamp 52 described later can be detected with higher accuracy, and a wavelength region suitable for polymerization of the polymer 18 of the substrate 10 to be processed and suppression of quality degradation of the substrate 10 to be processed in FIG. Can be detected with higher accuracy. FIG. 18 shows an example (UV-35) of spectral sensitivity of a suitable illuminometer as the first illuminometer 55.

As the second illuminometer 56, a wavelength region different from that of the first illuminometer 55, for example, a wavelength region 30.
An illuminometer having a peak sensitivity between 5 and 320 nm can be used. Thereby, it is possible to detect the emission peak at a wavelength, for example, 313 nm, which inhibits the polymerization of the polymer 18 of the substrate 10 of FIG. 1 and may deteriorate the quality of the substrate 10 with higher accuracy. In FIG. 19, the example (UV-31) of the spectral sensitivity of a suitable illuminometer as the 2nd illuminometer 56 is shown.

A stage 51 for placing the substrate 10 to be processed is provided inside the processing chamber 50 shown in FIG. A cooling plate 54 that cools the substrate 10 to be processed is disposed on the stage 51. Further, a substrate temperature control device 8 is arranged to control the cooling plate 54 and to control the temperature rise of the substrate 10 to be processed due to light irradiation from the lamp 52. A movement control device 9 for moving the stage 51 in the longitudinal direction of the substrate 10 to be processed may be arranged. Furthermore, a voltage is applied to the processing chamber 50 to apply or control a voltage to the substrate to be processed 10 to promote or control the formation of the alignment portions 21 and 22 (see FIG. 3) formed inside the substrate 10 to be processed. A control device 64 is connected.

As will be further clarified by the detailed structure described later, according to the first UV irradiation apparatus 5a shown in FIG. 14, it is possible to suppress ultraviolet irradiation in a wavelength region that affects the performance of the liquid crystal panel after manufacture, and to improve the yield with high performance. An improved liquid crystal panel can be manufactured.

-Lamp-
As the lamp 52 shown in FIG. 17, for example, an outer tube diameter of 27.522 in which electrodes 521 and 522 made of tungsten (W) are arranged inside an airtight container 520 made of quartz having ultraviolet transparency.
An ultraviolet lamp having a thickness of 5 mm, a thickness of 1.5 mm, a light emission length L of 1000 mm, a lamp voltage of 1275 V, and a lamp voltage value of 13.5 A can be used. An airtight container 520 is filled with a rare gas such as argon (Ar) gas.

As such an ultraviolet lamp, a lamp in which an airtight container 520 is filled with mercury (Hg) and a metal enclosure having at least one emission other than the spectrum of mercury in the wavelength region of 300 to 400 nm is suitable. is there. For example, a high-pressure mercury lamp in which mercury and a small amount of rare gas are sealed in the airtight container 520, or a high-intensity discharge lamp such as a metal halide lamp in which mercury and a halogenated metal are sealed in the airtight container 520 Is available.

In particular, as the lamp 52 suitable for processing the substrate 10 to be processed shown in FIG. 1, a thallium metal halide lamp in which mercury and thallium halide are enclosed in an airtight container 520 can be used. For example, mercury 1.6 mg / cc, thallium iodide (TlI
) When a thallium-based metal halide lamp encapsulated with 0.1 mg / cc and about 1.33 kPa of argon is used, as shown in FIG. 20, it has large emission peaks in the vicinity of wavelengths 352 nm, 365 nm, and 378 nm. The characteristics are about 1250V and about 14.0A.

Thallium (Tl) has a strong emission line spectrum in the wavelength region of 352 nm and 378 nm, and has the effect of reducing the emission intensity of mercury. Therefore, for example, it is possible to emit ultraviolet rays that suppress mercury emission at 313 nm and relatively increase emission in the wavelength region of 340 to 400 nm. Therefore, by using the lamp 52 containing thallium in the liquid crystal panel manufacturing apparatus of FIG. 14, it is possible to reduce the irradiation of ultraviolet rays having a wavelength region of 340 nm or less that greatly affects the characteristics of the liquid crystal panel 20 of FIG.

The amount of thallium halide sealed is M when the inside diameter of the lamp is D ≦ 30 mm.
Is preferably an amount selected from 0.01 mg / cc ≦ M ≦ 0.3 mg / cc. More preferably, the inner diameter D of the lamp is D ≦ 30 mm, and the light emission length L is 500 mm ≦ L ≦ 2500 m.
m, the enclosed amount Hg of mercury is 0.9 mg / cc ≦ Hg ≦ 2.0 mg / cc, and the enclosed amount M of thallium halide is 0.012 mg / cc ≦ M ≦ 0.1 mg / cc. Preferably, the amount is selected from

By setting the amount M of thallium halide to be M ≦ 0.3 mg / cc, the lamp 52
Since uniform illuminance can be obtained with respect to the axial direction, uniform irradiation of ultraviolet rays to the substrate 10 to be processed can be realized. As can be seen from FIG. 20, the peak value of illuminance at a wavelength of 313 nm that affects the characteristics of the substrate to be processed 10 can be reduced to 5% or less compared to the peak value of illuminance at a wavelength of 365 nm. The characteristics of the liquid crystal panel after irradiation can be further improved.

On the other hand, if the sealed amount of thallium halide is 0.3 mg / cc or more, the airtight container 52
Since thallium enclosed in 0 is dispersed non-uniformly in the longitudinal direction of the lamp 52, luminescence separation occurs, and lamp performance deteriorates.

As the lamp 52, an iron-based metal halide lamp having a spectrum as shown in FIG. 21 can also be used. For example, an iron-based metal halide lamp in which a discharge medium of mercury 1.2 mg / cc, iron 0.027 mg / cc, and mercury iodide 0.1 mg / cc is sealed in an airtight container has a wavelength of 365 nm as shown in FIG. It has the largest emission peak.

As shown in FIG. 22, when an iron-based metal halide lamp and a thallium-based metal halide lamp are compared, a wavelength of 340 nm that affects the characteristics of the substrate 10 to be processed of FIG.
When the following illuminance wavelengths are integrated and compared, it can be seen that the value of the iron-based metal halide lamp is more than twice that of the thallium-based metal halide lamp.

Therefore, when it is desired to suppress light emission from the lamp 52 in a wavelength region of 340 nm or less, it is preferable to use a thallium-based metal halide lamp rather than an iron-based metal halide lamp. In addition, since the ultraviolet rays with a wavelength region of 340 nm or less can be suppressed by the filter 53 described later, if you want to use a lamp that emits ultraviolet rays with a relatively wide irradiating wavelength region, use a thallium metal halide lamp. Also, it is preferable to use an iron-based metal halide lamp.

FIG. 23 shows a comparative example of spectral distributions of the iron-based metal halide lamp according to the embodiment and a mercury lamp as a comparative example. Mercury lamps have large emission peaks in the wavelength regions of 365 nm, 313 nm, and 303 nm. When focusing on the illuminance around 365 nm, the iron-based metal halide lamp shows an illuminance that is about 45% lower than that of the mercury lamp, but in the wavelength range of 340 to 380 nm suitable for irradiation to the substrate 10 to be processed, High illuminance.

Since the mercury lamp has a high emission peak in a wavelength region of 340 nm or less that affects the characteristics of the substrate 10 to be processed, an iron-based metal halide lamp is used rather than the mercury lamp in consideration of performance improvement of the substrate 10 to be processed. Is preferred.

As shown in the example of FIG. 24, even when the illuminance is measured using an iron-based metal hydride lamp having a light emission length L of 1800 mm, the distance between the electrodes is in the range of 100 mm to 1800 mm, and is almost the axial direction of the lamp 52. Since uniform illuminance can be obtained, it is suitable for increasing the size of the substrate 10 to be processed. Moreover, when applying to the 1st UV irradiation apparatus 5a shown in FIG.
Even when an iron-based metal hydride lamp or a thallium-based metal halide lamp having a light emission length L of 2500 mm is used, substantially the same effect as in FIG. 24 can be obtained.

-Lamp water cooling structure-
FIG. 25 is a schematic diagram showing the periphery of the lamp 52 shown in FIG. The lamp 52 is connected to the inner tube 1
A cooling pipe 100 having a double pipe structure of 01 and an outer pipe 102 is surrounded. Inner pipe 101
Between the outer tube 102 and the outer tube 102, water (pure water) for cooling the lamp 52 is accommodated. In addition, a heat absorption filter 103 having spectral characteristics and absorbing infrared rays from the lamp 52 is disposed between the inner tube 101 and the outer tube 102 so as to surround the lamp 52.

The heat absorption filter 103 is preferably a heat absorption filter having spectral characteristics capable of absorbing infrared rays and selectively transmitting ultraviolet rays in a wavelength region of about 300 to 400 nm. For example, as shown in FIG. 26, a heat absorption filter having a spectral transmittance peak in the wavelength region of 260 to 400 nm can be used. By disposing the heat absorption filter 103 having spectral characteristics as shown in FIG. 26, it becomes possible to transmit ultraviolet rays in a wavelength region in which the polymer 18 inside the substrate to be processed 10 reacts efficiently, Since the irradiation of visible light and infrared rays that cause heating of the substrate to be processed 10 is suppressed, the characteristic deterioration of the substrate to be processed 10 is further suppressed, and the yield and performance of the manufactured liquid crystal panel are improved.

-Filter-
As the filter 53 shown in FIG. 14, a multilayer filter obtained by depositing a plurality of thin films on a quartz or glass substrate, or an optical filter in which an absorbent is added to a quartz or glass substrate,
An absorption filter or the like can be used. As a characteristic of the filter 53, a low pass filter having a central cutoff wavelength on the short wavelength side in a wavelength region of 320 to 360 nm is preferable. In the filter 53 according to the embodiment, the “center cutoff wavelength” refers to a cutoff wavelength defined by the wavelength at normal incidence (incidence angle 0 degree).

When the incident angle of ultraviolet rays increases, the cutoff wavelength moves to the short wavelength side. For example, when a low-pass filter to which an absorber having a center cutoff wavelength of 360 nm is added is used, as shown in FIG. 27, the spectral transmittance is 50% when the incident angles of ultraviolet rays are 30 ° and 45 °.
The cut-off wavelength defined in (1) changes in the range of 355 to 360 nm, but the change width is relatively small. On the other hand, as shown in FIG. 28, when a multilayer filter having a center cutoff wavelength of 350 nm is used, the spectral transmittance 50% is 35 by setting the incident angle to 30 ° and 60 °.
It becomes 0 nm, 340 nm, and 325 nm, and the change width of the cutoff wavelength with respect to the incident angle of ultraviolet rays becomes large.

In order to promote the polymerization of the polymer 18 inside the substrate to be processed 10 to form the alignment portions 21 and 22 and reduce the change in the characteristics of the liquid crystal panel 20 after the manufacture, ultraviolet irradiation with a wavelength of 340 nm or less is suppressed. The filter 53 has a central cutoff wavelength N in the wavelength region of 320 to 360 nm, preferably 330 to 350 nm, and the change in cutoff wavelength is −15 nm when the incident angle of ultraviolet rays is 0 ° to 60 °. It is preferable to use a multilayer filter in the range of <N <+15 nm.

By using the filter according to the embodiment, when the amount of light in the wavelength region 300 to 400 nm is 100%, the ultraviolet light that is suppressed so that the light in the wavelength region 340 nm or less is 5% or less is processed substrate 10. Can be irradiated.

-Lamp control device-
As shown in FIG. 29, the lamp control device 7 shown in FIG. 14 includes a lamp power control unit 71, an illuminance determination unit 72, an integrated light amount determination unit 73, and a uniformity determination unit 74. The lamp control device 7 includes
A storage device 75 for storing various data such as a set value of an illuminance value suitable for processing the substrate to be processed 10 may be provided.

The lamp power control unit 71 controls lamp power based on the determination results of the illuminance determination unit 72, the integrated light amount determination unit 73, and the uniformity determination unit 74. The illuminance determination unit 72 reads the illuminance value setting data stored in the storage device 75, and whether or not the illuminance value detected by the first illuminance meter 55 or the second illuminance meter 56 is within a predetermined range. Can be determined.

FIG. 30 shows the relationship between the illuminance value and the irradiation time when the substrate 10 shown in FIG. 1 is processed, the orientation state (polymerization effect) of the orientation parts 21 and 22 shown in FIG. . The “illuminance value” represents a value detected by the illuminometer having the spectral sensitivity shown in FIG. 18 as the first illuminometer 55. In the following description, “irradiation time” refers to the substrate to be processed 10 of FIG.
Represents the actual irradiation time.

As shown in FIG. 30, when the illuminance value detected by the first illuminometer 55 is 25 mW / cm ² or less, the polymerization effect of the polymer body 18 of FIG. 1 is obtained, but the liquid crystal panel 20 after manufacture is deteriorated. And production efficiency is lowered. When the illuminance value is 40 mW / cm ² or more, the polymerization proceeds well and the production efficiency is improved. However, when the illuminance value is higher than 100 mW / cm ² , damage to the polymer body 18 is increased, so by suppressing to 75 mW / cm ² , A polymerization effect is also obtained, and deterioration of the liquid crystal panel 20 after manufacture can be made difficult to occur.

Therefore, when the illuminance determination unit 72 processes the substrate 10 to be processed of FIG.
Is, for example, 25 mW / cm ² or more, or preferably 25 to 100 mW /
or in the range of cm ^2, more preferably, it determines whether the range of 40~75mW / cm ^2, based on the determination result, controls the voltage or current of the lamp 52 by the lamp power control unit 71 Is preferred.

In general, the lamp 52 has a tendency that the amount of light gradually decreases as the lifetime approaches. For this reason, the illuminance value detected by the first illuminance meter 55 and the like also decreases with time. In order to irradiate the plurality of substrates to be processed with ultraviolet rays with an equal amount of light, when the lamp 52 deteriorates and the illuminance decreases as the lighting time becomes longer, the illuminance is increased by increasing the voltage or current. It is desirable to maintain the above a certain level.

In the liquid crystal panel manufacturing apparatus shown in FIG. 14, the illuminance determination unit 72 detects the illuminance value of the first illuminance meter 55 or the second illuminance meter 56, and the first illuminance meter 55 or the second illuminance with respect to the lighting time of the lamp 52. It is preferable to control the voltage or current of the lamp so that the illuminance value is returned to a predetermined value when the change amount of the illuminance value of the total 56 is about 10% or less. The “lighting time” represents an integrated value of the time when the lamp 52 is actually turned on.

The integrated light quantity determination unit 73 determines whether or not the “integrated light quantity” is a certain value or more. The “integrated light amount” is indicated by the product of the illuminance value detected by the first illuminometer 55 and the irradiation time of the lamp 52.
For example, when processing the substrate 10 to be processed of FIG. 1, the integrated light quantity determination unit 73 can determine whether or not the integrated light quantity is 2000 mJ / cm ² or more. Integrated light quantity is 20
By setting it to 00 mJ / cm ² or more, the polymerization effect of the polymer 18 inside the substrate to be processed 10 can be obtained, and the characteristic deterioration of the liquid crystal panel shown in FIG. On the other hand, 2000
By setting it to mJ / cm ² or less, the alignment portions 21 and 22 inside the liquid crystal panel of FIG. 3 are not sufficiently formed, resulting in performance degradation.

The uniformity determination unit 74 determines whether or not the “uniformity” calculated from the maximum illuminance value and the minimum illuminance value detected by the first illuminance meter 55 or the second illuminance meter is equal to or greater than a predetermined value. Here, the “homogeneity” is detected by the first illuminometer 55 (or the second illuminometer 56) when attention is paid to the relationship between the longitudinal direction of the substrate 10 to be processed and the illuminance, as shown in FIG. Using the maximum illuminance value (MAX) and minimum illuminance value (MIN) of the illuminance value,

Uniformity (%) = (1− (MAX−MIN) / (MAX + MIN)) × 100

The ratio of the uniformity of illuminance represented by

As shown in FIG. 14, when light is irradiated from each of the plurality of lamps 52, the substrate to be processed 1
The illuminance of ultraviolet rays applied to the 0 surface varies depending on the location. When the amount of change increases, irradiation unevenness occurs on the surface of the substrate 10 to be processed, making it difficult to manufacture a liquid crystal panel with high responsiveness.

By providing the uniformity determination unit 74 shown in FIG. 29, it is possible to determine whether or not the uniformity with respect to the surface of the substrate to be processed 10 is within a predetermined range according to the output power of the plurality of lamps 52. Liquid crystal panels can be manufactured.

FIG. 14 shows a method for estimating the uniformity of the surface of the substrate 10 to be processed based on the illuminance value of the first illuminance meter 52 (or the second illuminance meter 56) disposed above the lamp 52. However, an illuminance meter may be disposed on the stage 51 or the cooling plate 54 on which the substrate 10 is disposed, and the uniformity may be evaluated according to the measurement result of the illuminance meter on the stage 51 or the cooling plate 54.

FIG. 32 shows a table showing the relationship between the uniformity and the performance of the liquid crystal panel when using an illuminometer having a peak sensitivity in the wavelength region of 340 to 370 nm. By setting the uniformity to 75% or more, various performances such as response speed, transmittance, contrast, and polarization (light) characteristics of the liquid crystal panel 20 of FIG. 3 can be improved. When the substrate 10 shown in FIG. 1 is processed, the uniformity determination unit 74 determines whether or not the uniformity calculated by the first illuminometer 55 is 75% or more, and the determination result Based on the above, it is preferable that the lamp power control unit 71 controls the voltage or current of the lamp.

-Harmful wavelength illuminance determination mechanism-
As shown in FIG. 37 (a), when processing the substrate to be processed 10 shown in FIG.
m or a wavelength of 313n indicating a light emission peak of mercury, particularly a light in a harmful wavelength region of 320 nm or less
When m light is irradiated onto the shaded portion of the substrate 10 to be processed, white unevenness remains on the liquid crystal panel 20 after irradiation as shown in FIG. FIG. 38 shows a second example of detecting ultraviolet light having a wavelength of 313 nm.
The relationship of the influence of panel deterioration which the ultraviolet-ray with a wavelength of 313 nm at the time of using the illuminance meter 56 is shown is shown.

As shown in FIG. 38, when the illuminance value is 1 mW / cm ² or less, panel deterioration as shown in FIG. 37 (b) hardly occurs, but when the illuminance value is 1 mW / cm ² or more, 37 (b)
The rate at which panel deterioration as shown in FIG.

When the illuminance value of the second illuminometer 56 is 1 mW / cm ₂ or more, for example, the illuminance determination unit 72 shown in FIG. 29 warns the user via a display device or the like that is not shown, or 1
By controlling a mechanism (not shown) for adjusting the angle of the reflecting mirror 57 or the auxiliary reflecting plate 58 shown in FIG. 5, it is possible to suppress irradiation of ultraviolet rays in a harmful wavelength region that affects the performance of the substrate 10 to be processed. Can do.

Incidentally, as shown in FIG. 38, when processing the target substrate 10 shown in FIG. 1, the value of the illuminance of the second illuminance meter 56 is 1 mW / cm ² or more, more preferably, 0.5 mW / cm ² or more Or 0.
When it becomes ² mW / cm ² or more, it is preferable that the illuminance determination unit 72 issues a warning or the like to the user.

-Substrate temperature control mechanism-
FIG. 33 shows a schematic diagram when the cooling plate 54 shown in FIG. 14 is viewed from above. The cooling plate 54
For example, it is made of metal such as aluminum and has a flow path (cooling water flow path) for circulating cooling water inside.
541. The circulation speed of the cooling water may be controlled by the substrate temperature control device 8 shown in FIG. 14, or may be a constant speed. As shown in FIG. 34, a plurality of cold air nozzles 542 are arranged in the processing chamber 50 so as to be separated from each other along the longitudinal direction of the substrate 10 to be processed. The cool air may be sent. Accordingly, the substrate temperature of the substrate 10, 70 ° C. or less, preferably,
Controlled at 20-50 ° C. The position of the cold air nozzle 542 can be changed according to the size of the substrate. A fan for sending cold air may be installed instead of the cold air nozzle 542.

Since the polymer body 18 and the liquid crystal body 17 sealed in the substrate to be processed 10 have thermoplasticity, they may be deteriorated when exposed to high temperatures. For example, when the illuminance value measured with an illuminometer having a peak sensitivity at a wavelength of 365 nm is 100 mW / cm ² and the irradiation time is 200 ° C., the substrate temperature of the substrate to be processed 10 reaches 200 ° C. Molecular body 1
8 and the liquid crystal body 17 are significantly deteriorated in characteristics.

According to the first UV irradiation apparatus 5a shown in FIG. 34, since the temperature of the substrate 10 to be processed can be controlled to a predetermined temperature or less by providing the cold air nozzle 542 and the cooling plate 54, the polymer body 18 and the liquid crystal body 17 are deteriorated. Thus, various characteristics such as response speed, transmittance, contrast, and polarization (light) characteristics of the manufactured liquid crystal panel can be improved.

The driving of the cold air nozzle 542 and the cooling plate 54 can be selected according to the size of the substrate 10 to be processed. For example, when processing the substrate 10 to be processed of 550 mm × 650 mm, it is sufficiently possible to cool using only the cold air nozzle 542. For example, 1500 mm × 1
When processing a relatively large substrate such as the substrate to be processed 10 of 800 mm, the cold air nozzle 542 and the cooling plate 54 may be used in combination.

On the other hand, if the surface temperature of the substrate 10 to be processed varies due to the blowing of cold air, it is desirable to drive only the cooling plate 54. As shown in FIG. 34, a temperature sensor 543 for measuring the substrate temperature is provided in the processing chamber 50, and the substrate temperature control device 8 drives the cooling plate 54 and the cold air nozzle 542 in accordance with the detection value of the temperature sensor 543. You may make it control selectively.

-Substrate movement control mechanism-
As shown in FIG. 35, the amount of light applied to the surface of the substrate to be processed 10 may be locally non-uniform depending on the distance between the lamp 52 and the substrate 10 to be processed and the degree of light reflection of the reflector. is there.
Therefore, in FIG. 35, at a position indicated by a solid line, first, after irradiating ultraviolet rays for a certain period of time, the stage 51 is moved in the longitudinal direction of the substrate to be processed 10 by the distance W by the movement control device 9. Good. Thereby, compared with the case where it processes without moving the stage 51, the light irradiated to the to-be-processed substrate 10 can be made more uniform.

The distance W can be changed within an effective irradiation range in which the illuminance from the lamp 52 becomes a certain value or more. However, in consideration of the characteristics of the lamp 52, it is preferable that the distance W be moved by about ½ of the lamp pitch. For example, as the lamp 52, five metal halide lamps having an outer diameter of the arc tube of 27.5 mm and a light emission length of 1000 mm are mounted, and the substrate 1 to be processed shown in FIG. 1 having a size of 550 mm × 650 mm.
In the case of processing 0, the illuminance value of the illuminance meter (first illuminance meter 55) having a peak sensitivity in the wavelength region 340 to 370 nm is set to 75 mW / cm ^{2 and} irradiated for 25 seconds, and then the substrate 1 to be processed
0 is moved in the longitudinal direction of the substrate by about W = 125 mm, and further 2 at 75 mW / cm ² .
Irradiate for 5 seconds. Thereby, the reaction nonuniformity which arises in the liquid crystal panel 20 can be suppressed, and production of the liquid crystal panel 20 with high performance is realizable.

(Liquid crystal panel manufacturing method using ultraviolet irradiation device)
When processing the substrate 10 to be processed shown in FIG. 1 using the first UV irradiation apparatus 5a shown in FIG. 14, first, setup is performed as shown in step S11 of FIG. As the setup, for example, various setting data for driving the lamp control device 7, the substrate temperature control device 8, the movement control device 9, and the voltage application control device 61 can be input to a storage device (not shown). .

Further, the test substrate 10 is arranged on the stage 51, the interior of the processing chamber 50 is set as a processing condition, and the illuminance of the surface of the substrate 10 to be processed and the first illuminometer 5 at the illuminance.
5 and the illuminance value of the second illuminometer 56 are derived. Further, as shown in FIG. 31, the relationship between the illuminance value of the first illuminometer 55 with respect to the longitudinal direction of the surface of the substrate 10 to be processed is derived. Thereby, based on the illuminance values of the first illuminance meter 55 and the second illuminance meter 56, the substrate to be processed 10.
The actual illuminance value on the surface of the substrate or the uniformity of the illuminance on the surface of the substrate 10 to be processed can be calculated.

When the setup is completed, the substrate 10 to be actually processed is placed on the cooling plate 54 in FIG. 14 by the transfer robot 62 shown in FIG.
Start cooling. The cooling method may be air-cooled with cold air of 5 to 15 ° C. based on the size of the substrate 10 to be processed. As shown in FIG. 34, the substrate temperature is detected by a temperature sensor 543, and the substrate temperature is, for example, The cooling plate 54 or the cold air nozzle 542 may be controlled by the substrate temperature control device 8 so as to be controlled to 70 ° C. or lower.

Subsequently, in step S13, for example, a voltage of 0 to 30 V is applied to the substrate 10 to be processed. In step S14, with the voltage applied to the substrate 10 to be processed, for example,
The lamp light is irradiated for 25 seconds under the condition that the illuminance value of the first illuminometer 55 is 75 mW / cm ² .
Thereafter, in step S15, the stage 51 is moved in the longitudinal direction of the substrate 10 to be processed. In step S16, with the voltage applied to the substrate 10 to be processed, for example, the illuminance value of the first illuminance meter 55 is 75 mW / Lamp light is irradiated for 25 seconds under the condition of cm ² .

In the lamp control device 7 of FIG. 14, the lamp 52 has an illuminance value of the first illuminometer 55 of 40 mW / c.
At m ₂ or more, the product of the illuminance value of the first illuminometer 55 and the irradiation time of the lamp is 2000 mJ /
The substrate to be processed 10 is irradiated with ultraviolet rays so as to be equal to or greater than cm ₂ . Further, when the amount of change in the illuminance value of the first illuminometer 55 with respect to the lamp irradiation time becomes 10% or less, the power of the lamp is controlled. The lamp control device 7 calculates the uniformity, so that the uniformity is 75% or more.
Control lamp power. The processed substrate 10 that has been processed is unloaded from the processing chamber 50 of FIG. 14 and transferred to the reversing unit 6 by the transfer robot 62 of FIG. 8 in step S17.

The UV irradiation unit 5 (first UV irradiation device 5a) according to the embodiment shown in FIG. 8 can suppress ultraviolet irradiation in a wavelength region of 340 nm or less that affects the performance of the manufactured liquid crystal panel and the like. Can produce liquid crystal panels with improved yields.

Although the present invention has been described according to the above-described embodiments, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

It goes without saying that the present invention includes various embodiments not described herein. Accordingly, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

It is sectional drawing which shows an example of the to-be-processed substrate which concerns on embodiment of this invention. It is a figure which shows the specific example of the polymer body 18 of FIG. It is sectional drawing which shows an example of the liquid crystal panel after irradiating the to-be-processed substrate 10 of FIG. 1 with an ultraviolet-ray. FIG. 4 is a perspective view illustrating an alignment state of an alignment unit 21 in FIG. 3. FIG. 4 is a schematic diagram illustrating a rising angle θ of the alignment unit 21 in FIG. 3. It is sectional drawing which shows the state (when voltage is not applied) of the liquid crystal body of the liquid crystal panel of FIG. It is sectional drawing which shows the state (at the time of voltage application) of the liquid crystal body of the liquid crystal panel of FIG. It is a top view which shows an example of the whole structure of the liquid crystal panel manufacturing apparatus which concerns on embodiment of this invention. It is a flowchart which shows operation | movement of the liquid crystal panel manufacturing apparatus of FIG. It is the schematic which shows the detail of the inversion part of FIG. It is the schematic which shows the example of the specific operation | movement of the inversion part of FIG. It is the schematic which shows the detail of the test | inspection part of FIG. It is the schematic which shows the example of the specific operation | movement of the test | inspection part of FIG. It is the schematic which shows the detail of the UV irradiation part of FIG. It is the schematic which shows an example of the periphery structure of the lamp | ramp of FIG. It is the schematic which shows an example of the periphery structure of the lamp | ramp of FIG. It is the schematic at the time of seeing the lamp | ramp of FIG. 14 from a longitudinal direction (axial direction). It is a graph which shows the spectral sensitivity of the irradiator suitable for the 1st irradiometer of FIG. It is a graph which shows the spectral sensitivity of the irradiator suitable for the 2nd irradiometer of FIG. It is a graph which shows the spectral distribution of a thallium type metal halide lamp. It is a graph which shows the spectral distribution of an iron-type metal halide lamp. It is a graph which shows the comparison of the spectral distribution of an iron-type metal halide lamp and a thallium-type metal halide lamp. It is a graph which shows the comparison of the spectral distribution of an iron-type metal halide lamp and a mercury lamp. It is a graph which shows the illumination intensity distribution with respect to the axial direction of an iron-type metal halide lamp. It is sectional drawing showing the peripheral part of the lamp | ramp shown in FIG. It is a graph which shows the spectral transmittance distribution of the heat ray absorption filter shown in FIG. It is the graph (the 1) showing the relationship between the incident angle of the filter shown in FIG. 14, and the transmittance | permeability. It is the graph (the 2) showing the relationship between the incident angle of the filter shown in FIG. 14, and the transmittance | permeability. It is a block diagram which shows the specific example of the lamp | ramp control apparatus shown in FIG. The relationship between the illuminance value, the irradiation time, the polymerization effect, the deterioration, and the production efficiency when the substrate to be processed shown in FIG. 1 is processed is shown. It is a graph explaining the calculation method of the uniformity which concerns on embodiment of this invention. It is a table | surface showing the relationship between uniformity and panel performance. It is a top view of the cooling plate which concerns on embodiment of this invention. It is a schematic diagram explaining the substrate temperature control mechanism which concerns on embodiment of this invention. It is a schematic diagram explaining the board | substrate movement control mechanism which concerns on embodiment of this invention. It is a flowchart explaining an example of the liquid crystal panel manufacturing method which concerns on embodiment of this invention. FIG. 37A is a plan view showing a liquid crystal panel after irradiation, and FIG. 37A shows the influence of the harmful wavelength region (313 nm peripheral region) on the properties of the substrate to be processed. is there. It is a table | surface which shows the relationship between an illuminance value and panel deterioration.

Explanation of symbols

DESCRIPTION OF SYMBOLS 2 ... Carry-in part 3 ... Inversion part 4 ... Inspection part 4a ... 1st inspection apparatus 4b ... 2nd inspection apparatus 5 ... UV irradiation part 5a ... 1st UV irradiation apparatus 5b ... 2nd UV irradiation apparatus 6 ... Inversion part 7 ... Lamp control apparatus DESCRIPTION OF SYMBOLS 8 ... Substrate temperature control device 9 ... Movement control device 10 ... Substrate to be processed 11 ... Semiconductor element 12 ... Substrate 13 ... Color filter 14 ... Substrate 15 ... Transparent electrode 16 ... Transparent electrode 17 ... Liquid crystal body 18 ... Polymer body 19 ... Seal Section 20 ... Liquid crystal panel 21 ... Orientation section 22 ... Orientation section 25 ... Transfer robot 30 ... Processing chamber 31 ... First suction section 32 ... Second suction section 33 ... Third suction section 34 ... Movable section 35 ... Rotating section 36 ... Movable Unit 40 ... Processing chamber 41 ... Installation table 42 ... Backlight irradiation unit 43 ... CCD camera 44 ... Applying connector 45 ... Voltage applying unit 50 ... Processing chamber 51 ... Stage 52 ... Lamp 53 ... Filter 54 ... Cooling plate 55 ... First illuminance meter 56 ... Second illuminance meter 57 ... Reflector 58 ... Auxiliary reflector 61 ... Display device 62 ... Transport robot 63 ... Ionizer 64 ... Voltage application control device 71 ... Lamp power control unit 72 ... Illuminance Determination unit 73 ... Integrated light amount determination unit 74 ... Uniformity determination unit 75 ... Storage device 100 ... Cooling pipe 101 ... Inner pipe 102 ... Outer pipe 103 ... Heat absorption filter 520 ... Airtight container 521, 522 ... Electrode 541 ... Cooling water flow path 542 ... Cold air nozzle 543 ... Temperature sensor

Claims (3)

A processing chamber for processing a substrate to be processed in which a liquid crystal containing a photoreactive substance is enclosed;
A plurality of lamps disposed in the processing chamber, irradiating the substrate to be processed with ultraviolet rays to react the photoreactive substance, and forming an alignment portion inside the substrate to be processed;
A filter that opposes the lamp and suppresses transmission of ultraviolet rays in a wavelength region of 340 nm or less;
An illuminometer that measures the illuminance of the lamp;
The uniformity is calculated from the maximum illuminance value and the minimum illuminance value detected by the illuminance meter, and the power of the plurality of lamps is controlled so that the uniformity of the ultraviolet irradiation surface of the substrate to be processed is 75% or more. A lamp control device,
Each of the plurality of lamps includes iron or thallium ,
The uniformity is set such that the maximum illuminance value is MAX and the minimum illuminance value is MIN.
Uniformity (%) = (1− (MAX−MIN) / (MAX + MIN)) × 100
A liquid crystal panel manufacturing apparatus represented by: The illuminometer includes a first illuminometer having a peak sensitivity in a wavelength region of 340 to 370 nm, and a second illuminometer having a peak sensitivity in a wavelength region of 305 to 320 nm,
The lamp control device, the illuminance value of the first illuminance meter 25~100mW / cm ^2, the illuminance value of the second illuminance meter to control the power of the plurality of lamps so that 1 mW / cm ² or less The liquid crystal panel manufacturing apparatus according to claim 1. The illuminance of the ultraviolet irradiation surface of the substrate to be processed in which the liquid crystal containing the photoreactive substance is enclosed is detected, and the uniformity calculated from the detected maximum illuminance value and minimum illuminance value is 75% or more. As described above, the substrate to be processed is irradiated with ultraviolet rays through a filter that suppresses transmission of ultraviolet rays having a wavelength region of 340 nm or less while controlling the power of a plurality of lamps containing iron or thallium, and the photoreactive substance is reacted. Forming an alignment portion inside the substrate to be processed ,
The uniformity is set such that the maximum illuminance value is MAX and the minimum illuminance value is MIN.
Uniformity (%) = (1− (MAX−MIN) / (MAX + MIN)) × 100
Method of manufacturing a liquid crystal panel, characterized by being represented by.

Images