JP5887981B2

JP5887981B2 - Ultraviolet irradiation device and illuminance adjustment method

Info

Publication number: JP5887981B2
Application number: JP2012030592A
Authority: JP
Inventors: 裕和石飛; 保文川鍋; 行正齋藤; 洋大場; 洋行島村; 大野　正之; 正之大野; 今井　誠; 誠今井
Original assignee: Iwasaki Denki KK
Current assignee: Iwasaki Denki KK
Priority date: 2012-02-15
Filing date: 2012-02-15
Publication date: 2016-03-16
Anticipated expiration: 2032-02-15
Also published as: JP2013168274A

Description

本発明は、紫外線照射装置の照度調整技術に関する。 The present invention relates to an illuminance adjustment technique for an ultraviolet irradiation device.

従来、液晶パネルの製造工程においては、液晶パネルの基板を貼り合わせる紫外線硬化樹脂を硬化させたり、液晶パネルの液晶配向特性を付加したりするために、紫外線照射装置が用いられている。 Conventionally, in a manufacturing process of a liquid crystal panel, an ultraviolet irradiation device is used to cure an ultraviolet curable resin to which a substrate of the liquid crystal panel is bonded or to add liquid crystal alignment characteristics of the liquid crystal panel.

ランプを紫外線光源とした紫外線照射装置では、ランプの照射範囲や照度分布によって、均一な照度が得られる照射エリアが制限される。そこで近年では、ランプから放射される光の一部を反射する反射部材を紫外線照射装置に設け、当該反射部材の形状や傾斜角度を適宜に調整することで、均一な照度で照射可能なエリアを拡大し、液晶パネル等の比較的大きな照射対象の全面を均一な照度で紫外線照射可能にする技術が提案されている（例えば、特許文献１参照）。 In an ultraviolet irradiation device using a lamp as an ultraviolet light source, an irradiation area where uniform illuminance can be obtained is limited by the irradiation range and illuminance distribution of the lamp. Therefore, in recent years, an ultraviolet irradiating device is provided with a reflecting member that reflects a part of the light emitted from the lamp, and an area that can be irradiated with uniform illuminance can be obtained by appropriately adjusting the shape and inclination angle of the reflecting member. There has been proposed a technique that expands and makes it possible to irradiate ultraviolet rays with uniform illuminance on the entire surface of a relatively large irradiation target such as a liquid crystal panel (see, for example, Patent Document 1).

特開２０１０−２１８７７５号公報JP 2010-218775 A

しかしながら、光源と照射エリアの間に、干渉フィルタを配置すると、当該干渉フィルタが有する光学特性の入射角依存性により、照射エリアでの照度分布が崩れてしまい、均一な照射ができなかった。 However, when an interference filter is disposed between the light source and the irradiation area, the illumination distribution in the irradiation area is destroyed due to the incident angle dependency of the optical characteristics of the interference filter, and uniform irradiation cannot be performed.

本発明は、上述した事情に鑑みてなされたものであり、均一な照度での照射を可能にする紫外線照射装置、及び照度調整方法を提供することを目的とする。 The present invention has been made in view of the above-described circumstances, and an object thereof is to provide an ultraviolet irradiation device and an illuminance adjustment method that enable irradiation with uniform illuminance.

上記目的を達成するために、本発明は、紫外線を放射する光源と、前記光源から放射される紫外線を反射する半楕円筒状の反射ミラーと、前記光源、及び照射エリアの間に配置され、前記反射ミラーから反射された紫外線が通る干渉フィルタと、前記照射エリアの周囲に配置され、前記干渉フィルタを通って前記照射エリアの外に向かう紫外線を、前記照射エリア内で照度が低い箇所に反射する傾斜角度で設けられた補助反射ミラーと、を備え、前記補助反射ミラーの面内は、前記干渉フィルタの中心波長よりも短波長側に応答感度のピークを有する照度計で前記照射エリアを測定した場合に、照度が高い箇所を照射する反射光を抑える分光反射特性に設定されており、前記干渉フィルタを通って前記照射エリアを直接照射する紫外線と、前記補助反射ミラーで反射された紫外線とで、前記干渉フィルタの中心波長、及び前記照度計の応答感度に対応する波長域で前記照射エリアを均一に照射することを特徴とする紫外線照射装置を提供する。
本発明は、紫外線を放射する光源と、前記光源から放射される紫外線を反射する半楕円筒状の反射ミラーと、前記光源、及び照射エリアの間に配置され、前記反射ミラーから反射された紫外線が通る干渉フィルタ、及び吸収フィルタと、前記照射エリアの周囲に配置され、前記干渉フィルタ、及び前記吸収フィルタを通って前記照射エリアの外に向かう紫外線を、前記照射エリア内で照度が低い箇所に反射する傾斜角度で設けられた補助反射ミラーと、を備え、前記吸収フィルタは、所定の波長に応答感度のピークを有する第１照度計で前記照射エリアを測定した場合に、照度が高い箇所を照射する直接光を吸収する位置に、又は大きさで配置されており、或いは、照度が低い箇所を照射する直接光の吸収を抑える位置に、又は大きさで配置されており、前記補助反射ミラーの面内は、前記第１照度計よりも短波長側に応答感度のピークを有する第２照度計で前記照射エリアを測定した場合に、照度が高い箇所を照射する反射光を抑える分光反射特性に設定されており、前記干渉フィルタ、及び前記吸収フィルタを通って前記照射エリアを直接照射する紫外線と、前記補助反射ミラーで反射された紫外線とで、前記第１照度計、及び前記第２照度計のそれぞれの応答感度に対応する波長域で前記照射エリアを均一に照射することを特徴とする紫外線照射装置を提供する。 To achieve the above object, the present invention is disposed between a light source that emits ultraviolet light, a semi-elliptical cylindrical reflection mirror that reflects ultraviolet light emitted from the light source, the light source, and an irradiation area. An interference filter through which the ultraviolet rays reflected from the reflecting mirror pass, and an ultraviolet ray that is arranged around the irradiation area and goes out of the irradiation area through the interference filter is reflected to a portion with low illuminance in the irradiation area. An auxiliary reflection mirror provided at an inclination angle, and the irradiation area is measured by an illuminometer having a response sensitivity peak on the short wavelength side of the center wavelength of the interference filter within the surface of the auxiliary reflection mirror. when the illuminance is set to the spectral reflection characteristics to suppress the reflected light that irradiates the high point, an ultraviolet irradiating the irradiation area directly through the interference filter, before In the ultraviolet rays reflected by the auxiliary reflecting mirror, provides an ultraviolet irradiation apparatus characterized by uniformly irradiating the illumination area in the wavelength range corresponding to the response sensitivity of the center wavelength of the interference filter, and the luminometer .
The present invention includes a light source that emits ultraviolet light, a semi-elliptical cylindrical reflection mirror that reflects ultraviolet light emitted from the light source, and the ultraviolet light that is disposed between the light source and an irradiation area and reflected from the reflection mirror. An interference filter and an absorption filter that pass through, and an ultraviolet ray that is arranged around the irradiation area and passes through the interference filter and the absorption filter to the outside of the irradiation area, in a place where the illuminance is low in the irradiation area And an auxiliary reflection mirror provided at an inclination angle to reflect, and the absorption filter has a high illuminance when the irradiation area is measured by a first illuminometer having a response sensitivity peak at a predetermined wavelength. Arranged at a position or size that absorbs direct light to irradiate, or at a position or size that suppresses absorption of direct light that irradiates a place with low illuminance In the plane of the auxiliary reflection mirror, when the irradiation area is measured with a second illuminometer having a response sensitivity peak on the shorter wavelength side than the first illuminance meter, a portion with high illuminance is irradiated. Spectral reflection characteristics are set to suppress reflected light. The ultraviolet light that directly irradiates the irradiation area through the interference filter and the absorption filter, and the ultraviolet light that is reflected by the auxiliary reflection mirror. Provided is an ultraviolet irradiation device that uniformly irradiates the irradiation area in a wavelength range corresponding to response sensitivities of an illuminometer and the second illuminometer.

また本発明は、上記紫外線照射装置において、前記干渉フィルタ、及び前記吸収フィルタは、前記光源及び照射エリアの間で互いに上下に配置されており、前記干渉フィルタのエリア内に前記吸収フィルタが部分的に配置されており、又は、前記吸収フィルタのエリア内に前記干渉フィルタが部分的に配置されていることを特徴とする。 The present invention, in the above-mentioned ultraviolet irradiation apparatus, the interference filter, and the absorption filter are arranged one above the other between the light source and the illumination area, wherein the absorption filter is partially within the area of the interference filter It is disposed, or the interference filter in the area of the absorption filter is characterized in that it is partially disposed.

また本発明は、上記紫外線照射装置において、前記補助反射ミラーの反射面がアルミニウム材から形成されていることを特徴とする。 The present invention, in the above-mentioned ultraviolet irradiation apparatus, the reflecting surface of the auxiliary reflecting mirror is characterized in that it is formed of an aluminum material.

また本発明は、上記紫外線照射装置において、前記補助反射ミラーが干渉膜ミラーであることを特徴とする。 In the ultraviolet irradiation apparatus according to the present invention, the auxiliary reflection mirror is an interference film mirror.

また本発明は、上記紫外線照射装置において、前記補助反射ミラーが、複数の波長ごと
に異なる反射特性をもつ干渉膜ミラーを備えることを特徴とする。
上記紫外線照射装置において、前記補助反射ミラーの面内は、当該補助反射ミラーの面内への入射光の入射角度の大きさに応じて、前記第２照度計の応答感度に対応する波長域の反射率を小さくする分光反射特性が設定されていることを特徴とする。
上記紫外線照射装置において、前記補助反射ミラーの面内は、前記干渉フィルタへの入射光の入射角度の大きさに応じて、前記第２照度計の応答感度に対応する波長域の反射率を小さくする分光反射特性が設定されていることを特徴とする。 In the ultraviolet irradiation apparatus according to the present invention, the auxiliary reflection mirror includes an interference film mirror having different reflection characteristics for each of a plurality of wavelengths.
In the ultraviolet irradiation device, the surface of the auxiliary reflecting mirror has a wavelength range corresponding to the response sensitivity of the second illuminometer according to the incident angle of incident light into the surface of the auxiliary reflecting mirror. Spectral reflection characteristics that reduce the reflectance are set.
In the ultraviolet irradiation device, the reflectance of the wavelength region corresponding to the response sensitivity of the second illuminometer is reduced within the surface of the auxiliary reflecting mirror according to the incident angle of the incident light to the interference filter. Spectral reflection characteristics to be set are set.

また上記目的を達成するために、本発明は、紫外線を放射する光源と、前記光源から放射される紫外線を反射する半楕円筒状の反射ミラーと、前記光源及び照射エリアの間に配置され、前記反射ミラーから反射された紫外線が通る干渉フィルタ、及び吸収フィルタと、前記照射エリアの周囲に配置され、前記干渉フィルタ、及び前記吸収フィルタを通って前記照射エリアの外に向かう紫外線を、前記照射エリア内で照度が低い箇所に反射する補助反射ミラーと、を備え、前記干渉フィルタ、及び前記吸収フィルタを通って前記照射エリアを直接照射する紫外線と、前記補助反射ミラーで反射された紫外線とで前記照射エリアを均一に照射する紫外線照射装置の照度調整方法において、前記干渉フィルタの中心波長に応答感度を有する第１照度計と、前記第１照度計よりも短波長側に応答感度のピークを有する第２照度計とのそれぞれで照射エリア内の照度分布を測定し、それぞれの照度分布の測定結果に基づいて、前記補助反射ミラーの傾斜角度を、前記照射エリアの全域で必要な照度が得られる傾斜角度に調整するステップと、前記第１照度計で照度分布を測定し、この測定結果に基づいて、照度が高い箇所を照射する直接光を吸収する位置に、又は大きさで前記吸収フィルタを配置し、或いは、照度が低い箇所を照射する直接光の吸収を抑える位置に、又は大きさで前記吸収フィルタを配置し、かつ、前記第２照度計で照度分布を測定し、この測定結果に基づいて、前記補助反射ミラーの分光反射特性を、照度が高い箇所を照射する反射光を抑える分光反射特性に設定するステップと、を備えることを特徴とする。 In order to achieve the above object, the present invention is disposed between a light source that emits ultraviolet light, a semi-elliptical cylindrical reflection mirror that reflects ultraviolet light emitted from the light source, and the light source and an irradiation area. interference filter through which ultraviolet rays reflected from the reflecting mirror, and the absorption filter is disposed around the irradiation area, the interference filter, and the ultraviolet light toward the outside of the irradiation area through the absorption filter, the irradiation An auxiliary reflection mirror that reflects to a portion having low illuminance in the area , and ultraviolet rays that directly irradiate the irradiation area through the interference filter and the absorption filter, and ultraviolet rays that are reflected by the auxiliary reflection mirror in illuminance adjustment method of the ultraviolet irradiation apparatus for uniformly irradiating the illumination area, a first illumination having a response sensitivity at the center wavelength of the interference filter If the illuminance distribution of the irradiated area in each of the second illuminance meter having a peak response sensitivity to the short wavelength side than the first luminometer to measure, on the basis of the measured results of the illuminance distribution, the auxiliary The step of adjusting the tilt angle of the reflection mirror to the tilt angle at which the necessary illuminance can be obtained over the entire irradiation area, and the illuminance distribution is measured with the first illuminometer, and the location where the illuminance is high based on the measurement result Place the absorption filter at a position or size that absorbs the direct light that irradiates the light, or place the absorption filter at a position or size that suppresses the absorption of the direct light that irradiates a portion with low illuminance And the illuminance distribution is measured by the second illuminometer, and based on the measurement result, the spectral reflection characteristic of the auxiliary reflection mirror is set to the spectral reflection characteristic that suppresses the reflected light that irradiates the portion with high illuminance. Characterized in that it comprises a flop, a.

本発明によれば、照射エリアの周囲に配置され、フィルタを通って照射エリアの外に向かう紫外線を、照射エリア内で照度が低い箇所に反射する補助反射ミラーと、を備え、フィルタを通って照射エリアを直接照射する紫外線と、補助反射ミラーで反射された紫外線とで照射エリアを均一に照射するため、フィルタが配置されている場合でも、均一な照度での照射が可能になる。 According to the present invention, the auxiliary reflection mirror that is arranged around the irradiation area and reflects the ultraviolet rays that pass through the filter and go out of the irradiation area to a portion with low illuminance in the irradiation area, and passes through the filter. Since the irradiation area is uniformly irradiated with the ultraviolet rays that directly irradiate the irradiation area and the ultraviolet rays reflected by the auxiliary reflection mirror, irradiation with uniform illuminance is possible even when a filter is provided.

本発明の実施形態に係る紫外線照射装置の基本構成を模式的に示す斜視図である。It is a perspective view showing typically the basic composition of the ultraviolet irradiation device concerning the embodiment of the present invention. 紫外線照射装置の概略構成を示す正面図である。It is a front view which shows schematic structure of an ultraviolet irradiation device. 干渉フィルタの分光特性を示す図である。It is a figure which shows the spectral characteristic of an interference filter. ２つの照度計の応答感度を示す図である。It is a figure which shows the response sensitivity of two luminometers. 応答感度が異なる２つの照度計を用いたワークの照度分布調整手順を示すフローチャートである。It is a flowchart which shows the illumination intensity distribution adjustment procedure of the workpiece | work using two illuminance meters from which response sensitivity differs.

以下、図面を参照して本発明の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は本実施形態に係る紫外線照射装置１の概略構成を示す斜視図であり、図２は紫外線照射装置１の概略構成を示す正面図である。 FIG. 1 is a perspective view showing a schematic configuration of an ultraviolet irradiation device 1 according to the present embodiment, and FIG. 2 is a front view showing a schematic configuration of the ultraviolet irradiation device 1.

これらの図に示すように、紫外線照射装置１は、紫外線を直下のワーク２に照射する複数の照射器３と、それぞれの照射器３ごとにワーク２との間に配設された干渉フィルタ４とを備え、照射器３が照射する紫外線をワーク２に干渉フィルタ４を通して照射するとともに、更に、２つの照度計２０Ａ、２０Ｂを有する照度分布測定用具２１、第１補助反射ミラー２２、及び第２補助反射ミラー２３を備えている。 As shown in these drawings, an ultraviolet irradiation device 1 includes a plurality of irradiators 3 that irradiate ultraviolet rays onto a workpiece 2 directly below, and an interference filter 4 disposed between the workpieces 2 for each of the irradiators 3. And irradiating the work 2 with the ultraviolet rays irradiated by the irradiator 3 through the interference filter 4, and further, the illuminance distribution measuring tool 21, the first auxiliary reflection mirror 22, and the second illuminance meter 20A, 20B. An auxiliary reflecting mirror 23 is provided.

ワーク２は、幅Ｗが約６２０ｍｍ、長さＬが約７５０ｍｍの照射エリア２Ａを有する矩形状を成し、この照射エリア２Ａに例えば液晶パネルが載置されて紫外線が照射される。このワーク２は、ワーク冷却ステージ７に載置固定されて照射エリア２Ａの全面が一様に冷却されている。 The workpiece 2 has a rectangular shape having an irradiation area 2A having a width W of about 620 mm and a length L of about 750 mm, and a liquid crystal panel, for example, is placed on the irradiation area 2A and irradiated with ultraviolet rays. The work 2 is placed and fixed on the work cooling stage 7 so that the entire surface of the irradiation area 2A is uniformly cooled.

照射器３は、図２に示すように、底面開放型の直方体状の照射器筐体１０を有し、この照射器筐体１０には、波長約２００ｎｍ〜６００ｎｍの紫外線を線状に放射する線状紫外線光源たるメタルハライドランプ１１と、このメタルハライドランプ１１を包囲する半楕円筒状（シリンドリカル状）の反射ミラー１２とが内設され、メタルハライドランプ１１から放射される紫外線を反射ミラー１２で反射して照射器筐体１０の底面から線状に紫外線を照射する。 As shown in FIG. 2, the irradiator 3 includes a rectangular parallelepiped irradiator casing 10 having an open bottom, and the irradiator casing 10 radiates ultraviolet rays having a wavelength of about 200 nm to 600 nm in a linear shape. A metal halide lamp 11 as a linear ultraviolet light source and a semi-elliptical cylindrical (cylindrical) reflection mirror 12 surrounding the metal halide lamp 11 are provided, and the ultraviolet light emitted from the metal halide lamp 11 is reflected by the reflection mirror 12. Then, ultraviolet rays are irradiated linearly from the bottom surface of the irradiator housing 10.

干渉フィルタ４は、誘電体多層膜から成る透過フィルタであり、図１及び図２に示すように、照射器３の底面全体を十分に覆う面積を有し、当該照射器３とワーク２（すなわち、照射エリア２Ａ）の間であって、照射器３の底面に近付けて配置されている。 The interference filter 4 is a transmission filter made of a dielectric multilayer film, and has an area sufficiently covering the entire bottom surface of the irradiator 3 as shown in FIGS. 1 and 2, and the irradiator 3 and the workpiece 2 (that is, , Between the irradiation areas 2 </ b> A) and close to the bottom surface of the irradiator 3.

干渉フィルタ４が透過する透過波長域は、紫外線照射装置１の使用用途に応じて適宜に設定され、本実施形態では、液晶パネルの製造（液晶の配向制御や貼り合わせなど）に最適な帯域が設定されている。 The transmission wavelength range that the interference filter 4 transmits is appropriately set according to the use application of the ultraviolet irradiation device 1, and in this embodiment, there is an optimum band for manufacturing a liquid crystal panel (such as liquid crystal alignment control and bonding). Is set.

具体的には、本実施形態の干渉フィルタ４は、図３に示すように、干渉フィルタ４は、約３９０ｎｍ付近を中心波長λｃとし、約１００ｎｍの半値幅Δλを有している。なお、図３に示す透過特性の入射角依存性については後述する。 Specifically, as shown in FIG. 3, the interference filter 4 of the present embodiment has a center wavelength λc in the vicinity of about 390 nm and a half-value width Δλ of about 100 nm. The incident angle dependence of the transmission characteristics shown in FIG. 3 will be described later.

この紫外線照射装置１では、前掲図２に示すように、３つの照射器３、及び干渉フィルタ４がワーク２の幅方向に所定の間隔Ｍでワーク２の幅Ｗの方向に並列に設けられている。このとき、横並びの照射器３のうちの両端の照射器３は、内蔵のメタルハライドランプ１１がワーク２の幅Ｗ（すなわち、照射エリア２Ａ）の若干外側に位置するように配置されている。すなわち、ワーク２の照射エリア２Ａの略全域が中央の照射器３により照射され、また幅Ｗ方向の両端部で照度が低下する箇所については、中央の照射器３を挟んだ両端の照射器３の照射によって照度の低下が補われる。なお、中央の照射器３（すなわち、ワーク２の幅Ｗ内に内蔵のメタルハライドランプ１１が配置される照射器３）は１つに限らず、複数の照射器３を並設して構成しても良く、これにより、照射エリア２Ａの幅Ｗを拡張できる。また、両端の照射器３（すなわち、ワーク２の幅Ｗの外に内蔵のメタルハライドランプ１１が配置される照射器３）についても同様に、各端部に複数の照射器３を並設しても良い。 In this ultraviolet irradiation device 1, as shown in FIG. 2, the three irradiators 3 and the interference filter 4 are provided in parallel in the width W direction of the workpiece 2 at a predetermined interval M in the width direction of the workpiece 2. Yes. At this time, the irradiators 3 at both ends of the side-by-side irradiators 3 are arranged such that the built-in metal halide lamps 11 are located slightly outside the width W of the workpiece 2 (that is, the irradiation area 2A). That is, substantially the entire irradiation area 2A of the work 2 is irradiated by the central irradiator 3, and the irradiators 3 at both ends sandwiching the central irradiator 3 with respect to places where the illuminance decreases at both ends in the width W direction. Irradiation compensates for the decrease in illuminance. The central irradiator 3 (that is, the irradiator 3 in which the built-in metal halide lamp 11 is disposed within the width W of the workpiece 2) is not limited to one, and a plurality of irradiators 3 are arranged in parallel. As a result, the width W of the irradiation area 2A can be expanded. Similarly, the irradiators 3 at both ends (that is, the irradiators 3 in which the built-in metal halide lamp 11 is disposed outside the width W of the workpiece 2) are provided with a plurality of irradiators 3 arranged in parallel at each end. Also good.

ただし、両端の照射器３については、内蔵のメタルハライドランプ１１の直下にワーク２が位置しないため、ワーク２の照射エリア２Ａに照射されずに外に漏れる紫外線が比較的多く、効率が悪い。 However, with respect to the irradiators 3 at both ends, since the workpiece 2 is not located directly below the built-in metal halide lamp 11, there is a relatively large amount of ultraviolet rays that leak outside without being irradiated on the irradiation area 2A of the workpiece 2, and the efficiency is poor.

そこで、この紫外線照射装置１では、図１及び図２に示すように、ワーク２の幅Ｗの方向に並列に並んだ照射器３のうちの両端の照射器３の直下のそれぞれに、照射器３から照射された紫外線をワーク２の照射エリア２Ａに反射する第１補助反射ミラー２２が設けられている。これにより、図２に矢印Ｋ１で示すように、両端の照射器３からワーク２の外側に向かう光Ｋ２が第１補助反射ミラー２２でワーク２に向けて反射され、ワーク２が効率良く照射される。 Therefore, in this ultraviolet irradiation device 1, as shown in FIGS. 1 and 2, each of the irradiators 3 arranged in parallel in the direction of the width W of the workpiece 2 is directly below the irradiators 3 at both ends. A first auxiliary reflection mirror 22 that reflects the ultraviolet rays irradiated from 3 to the irradiation area 2 </ b> A of the work 2 is provided. Thereby, as indicated by an arrow K1 in FIG. 2, the light K2 directed from the irradiators 3 at both ends toward the outside of the work 2 is reflected toward the work 2 by the first auxiliary reflection mirror 22, and the work 2 is efficiently irradiated. The

また、照射器３の長手方向両端部のそれぞれには（すなわち、ワーク２の長さＬ方向の両端のそれぞれには）、図１及び図２に示すように、３つの照射器３に亘る長さの上記第２補助反射ミラー２３がワーク２の長さＬ方向の両端に当該長さＬ方向に沿って設けられている。これらの第２補助反射ミラー２３は、干渉フィルタ４の出射側に近接して配置され、各照射器３のメタルハライドランプ１１から長手方向に放射されてワーク２の長さＬの外に漏れる光（図示略）を当該ワーク２に向けて反射する。これにより、各照射器３からワーク２の長さＬ方向の外に漏れる光がワーク２の照射に使われ、ワーク２が効率良く照射されることとなる。 Further, as shown in FIG. 1 and FIG. 2, the length over the three irradiators 3 is provided at each of the longitudinal ends of the irradiator 3 (that is, at both ends in the length L direction of the workpiece 2). The second auxiliary reflecting mirrors 23 are provided at both ends in the length L direction of the work 2 along the length L direction. These second auxiliary reflection mirrors 23 are arranged close to the emission side of the interference filter 4 and are emitted in the longitudinal direction from the metal halide lamp 11 of each irradiator 3 to leak out of the length L of the workpiece 2 ( (Not shown) is reflected toward the workpiece 2. As a result, the light leaking from each irradiator 3 to the outside of the length L direction of the work 2 is used for the irradiation of the work 2, and the work 2 is efficiently irradiated.

このように、並設された複数の照射器３の周囲を囲むように第１補助反射ミラー２２、及び第２補助反射ミラー２３を備えることにより、ワーク２の外側に漏れる光が、第１補助反射ミラー２２、及び第２補助反射ミラー２３のいずれかでワーク２に反射されることから、複数の照射器３を用いて比較的大きな照度で、かつ、効率良くワーク２を照射することができる。 As described above, by providing the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 so as to surround the plurality of irradiators 3 arranged in parallel, the light that leaks to the outside of the workpiece 2 is the first auxiliary. Since the light is reflected on the work 2 by either the reflection mirror 22 or the second auxiliary reflection mirror 23, the work 2 can be efficiently irradiated with a relatively large illuminance using the plurality of irradiators 3. .

本実施形態では、これら第１補助反射ミラー２２、及び第２補助反射ミラー２３には、特定の波長域の反射率を高めて照射エリア２Ａの照度を高めるべく、誘電体多層膜から成る増反射膜（干渉膜）が反射面にコーティングされた干渉膜ミラーとして構成されている。また、後に詳述するが、第１補助反射ミラー２２、及び第２補助反射ミラー２３は、不要な波長域を反射せずに透過させてカットするダイクロイックミラーの一態様としてのメタルダイクロミラーとしても構成されている。 In the present embodiment, the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 are provided with an increased reflection made of a dielectric multilayer film in order to increase the reflectance in a specific wavelength region and increase the illuminance of the irradiation area 2A. The film (interference film) is configured as an interference film mirror in which a reflection surface is coated. As will be described in detail later, the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 may also be used as metal dichroic mirrors as one aspect of a dichroic mirror that transmits and cuts unnecessary wavelength regions without reflecting them. It is configured.

ここで、複数の照射器３を並べてワーク２を照射する場合、ワーク２の中央部（換言すれば、並設された複数の照射器３の並び中央の直下部分）に対しては、図２に示すように、両端の照射器３の光Ｋ２も照射されることから、照度が他の箇所よりも突出して大きくなり易い。これに対して、例えば、両端の照射器３のメタルハライドランプ１１の出力を中央の照射器３よりも下げることで、ワーク２の中央部での照度を抑えることができるものの、そうすると、両端の照射器３で照らされているワーク２の両端部の照度も低下してしまう。 Here, when irradiating the workpiece 2 with a plurality of irradiators 3 arranged side by side, the central portion of the workpiece 2 (in other words, the portion directly below the center of the arrangement of the plurality of irradiators 3 arranged side by side) is shown in FIG. Since the light K2 of the irradiator 3 at both ends is also irradiated as shown in FIG. On the other hand, for example, the illuminance at the center of the work 2 can be suppressed by lowering the output of the metal halide lamps 11 of the irradiators 3 at both ends than the irradiator 3 at the center. The illuminance at both ends of the work 2 illuminated by the vessel 3 also decreases.

そこで、本実施形態では、並設された複数の照射器３のメタルハライドランプ１１の出力を略同一としつつ、両端の照射器３の放射光のうちワーク２を直射照射する直射光Ｋ２の成分を減衰させる吸収フィルタ３０を設けた構成としている。この吸収フィルタ３０は、所定の波長域（本実施形態では、後述の照度計２０Ａが応答感度を有する波長域）の光を吸収して減衰させるものであり、吸収特性に入射角度依存性を有しないものが用いられている。かかる吸収フィルタ３０は、両端の照射器３に対応して設けられた各干渉フィルタ４の底面（照射エリア２Ａとの対向面）に、直射光Ｋ２が通る範囲のみを覆い、ワーク２の外側に向かう光、すなわち第１補助反射ミラー２２、及び第２補助反射ミラー２３で反射される光が通る範囲を避けて配置されている。 Therefore, in the present embodiment, the components of the direct light K2 that directly irradiates the workpiece 2 out of the radiated light of the irradiators 3 at both ends are made substantially the same as the outputs of the metal halide lamps 11 of the plurality of irradiators 3 arranged in parallel. The absorption filter 30 to be attenuated is provided. The absorption filter 30 absorbs and attenuates light in a predetermined wavelength region (in this embodiment, a wavelength region in which the illuminometer 20A described later has response sensitivity), and the absorption characteristic has an incident angle dependency. What is not used is used. The absorption filter 30 covers only the range through which the direct light K2 passes on the bottom surface (opposite surface to the irradiation area 2A) of each interference filter 4 provided corresponding to the irradiators 3 at both ends, and on the outside of the workpiece 2. It is arranged so as to avoid the range in which the light traveling, that is, the light reflected by the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 passes.

これにより、ワーク２の中央部の照度を抑えつつ、ワーク２の縁部での照度低下が防止され、ワーク２の全面に亘り均一、かつ高照度な紫外線照射が可能になる。 Thereby, the illumination intensity fall in the edge part of the workpiece | work 2 is prevented, suppressing the illumination intensity of the center part of the workpiece | work 2, and uniform and high illumination intensity ultraviolet irradiation is attained over the whole surface of the workpiece | work 2. FIG.

なお、吸収フィルタ３０を干渉フィルタ４の上面（照射器３との対向面）に設けても良い。 The absorption filter 30 may be provided on the upper surface of the interference filter 4 (the surface facing the irradiator 3).

上記照度分布測定用具２１は、ワーク２の照射エリア２Ａの照度分布を測定するための器具であり、紫外線照射装置１の製造時や、メタルハライドランプ１１の交換等のメンテナンス時にワーク２に載置して使用され、照度分布の測定後には、ワーク２から取り除かれる。 The illuminance distribution measurement tool 21 is an instrument for measuring the illuminance distribution of the irradiation area 2A of the work 2 and is placed on the work 2 during the manufacture of the ultraviolet irradiation device 1 or during maintenance such as replacement of the metal halide lamp 11. And is removed from the work 2 after the illuminance distribution is measured.

具体的には、照度分布測定用具２１は、図１に示すように、照度計２０Ａ、２０Ｂと、ワーク２内を照度計２０Ａ、２０Ｂが移動可能に、なおかつ、これらの照度計２０Ａ、２０Ｂが同一の箇所の照度を測定可能に支持する支持機構３８とを備えている。 Specifically, as shown in FIG. 1, the illuminance distribution measurement tool 21 is configured such that the illuminance meters 20A and 20B and the illuminance meters 20A and 20B can move within the work 2, and the illuminance meters 20A and 20B And a support mechanism 38 that supports the illuminance at the same location so as to be measurable.

支持機構３８は、ワーク２に載置される矩形の枠体３５と、この枠体３５の対向する１対の辺で支持される２本の支持棒３６、３７とを有し、これら支持棒３６、３７は、互いに直交するように枠体３５に設けられており、支持棒３６、３７の交点に、２つの照度計２０Ａ、２０Ｂが並設されている。支持棒３６、３７のそれぞれは、枠体３５の辺にガイドされて当該辺に沿って所定長単位で１ステップずつ移動可能に構成されており、これにより、照度計２０Ａ、２０Ｂがワーク２の幅Ｗの方向、長さＬの方向の任意の位置に配置可能に成されている。また、照度計２０Ａと照度計２０Ｂとは、支持棒３６、３７の１ステップの移動距離と等しい離間だけ離間配置されており、支持棒３６、３７を１ステップ分だけずらすことで、照度計２０Ａと照度計２０Ｂとで同じ箇所で照度を測定可能になっている。 The support mechanism 38 includes a rectangular frame 35 placed on the workpiece 2 and two support rods 36 and 37 supported by a pair of opposite sides of the frame 35. These support rods 36 and 37 are provided in the frame 35 so as to be orthogonal to each other, and two illuminance meters 20A and 20B are juxtaposed at the intersection of the support rods 36 and 37. Each of the support rods 36 and 37 is configured to be guided by the side of the frame body 35 and to be moved one step at a time along the side by a predetermined length unit. It can be arranged at any position in the width W direction and the length L direction. Further, the illuminance meter 20A and the illuminance meter 20B are spaced apart by a distance equal to the moving distance of one step of the support bars 36 and 37, and the illuminance meter 20A is shifted by shifting the support bars 36 and 37 by one step. And the illuminance meter 20B can measure the illuminance at the same location.

なお、支持棒３６、３７の交点に、照度計２０Ａ、２０Ｂのいずれかを両者を交換自在に設ける構成とすることで、照度計２０Ａ、２０Ｂの両方で同一箇所を測定可能にしてもよい。 In addition, you may make it possible to measure the same location by both illuminance meter 20A, 20B by making it the structure which provides both illuminance meters 20A, 20B interchangeably in the intersection of the support rods 36,37.

図４は照度計２０Ａ、２０Ｂの応答感度を示す図である。なお、この図では、照度計２０Ａ、２０Ｂの応答感度を両者の相対値で示している。また、以下の説明では、各照射器３から干渉フィルタ４への入射角は最大５０度以下であるものとする。 FIG. 4 is a diagram showing the response sensitivity of the illuminance meters 20A and 20B. In this figure, the response sensitivities of the illuminance meters 20A and 20B are indicated by their relative values. In the following description, the incident angle from each irradiator 3 to the interference filter 4 is assumed to be 50 degrees or less at maximum.

照度計２０Ａ、２０Ｂは、それぞれ紫外波長域の照度を測定する器具であり、図４に示すように、照度計２０Ａ、２０Ｂのそれぞれは、所定の応答感度を有する波長域、及び応答感度がピークとなるピーク波長が異なっている。 The illuminance meters 20A and 20B are instruments for measuring the illuminance in the ultraviolet wavelength region, and as shown in FIG. 4, each of the illuminance meters 20A and 20B has a wavelength region having a predetermined response sensitivity and a peak response sensitivity. The peak wavelengths are different.

具体的には、照度計２０Ａは、波長３００ｎｍ〜３９０ｎｍに応答感度を有し、約３６５ｎｍの波長に応答感度のピークを有し、また照度計２０Ｂは、波長２９０ｎｍ〜３４０ｎｍに応答感度を有し、約３１３ｎｍの波長に応答感度のピークを有している。 Specifically, the illuminometer 20A has a response sensitivity at a wavelength of 300 nm to 390 nm, has a response sensitivity peak at a wavelength of about 365 nm, and the illuminometer 20B has a response sensitivity at a wavelength of 290 nm to 340 nm. , And has a response sensitivity peak at a wavelength of about 313 nm.

これらの照度計２０Ａ、２０Ｂのピーク波長は、当該紫外線照射装置１を液晶パネルの液晶配向特性の付加に用いる際に、高い均斉度が要求される波長に合わせて決定されたものである。本実施形態の紫外線照射装置１にあっては、上記の照度計２０Ａ、２０Ｂを用いてワーク２の照射エリア２Ａの照度分布を測定した際に、照度計２０Ａで測定したときに照度の平均値が１００ｍＷ／ｃｍ²、均斉度が１０％以内、照度計２０Ｂで測定したときに照度の平均値０．１〜０．２５ｍＷ／ｃｍ²、均斉度が１６％以内という数値が実現されている。 The peak wavelengths of the illuminance meters 20A and 20B are determined in accordance with the wavelength that requires high uniformity when the ultraviolet irradiation device 1 is used for adding liquid crystal alignment characteristics of the liquid crystal panel. In the ultraviolet irradiation device 1 of the present embodiment, when the illuminance distribution of the irradiation area 2A of the workpiece 2 is measured using the illuminance meters 20A and 20B, the average value of the illuminance when measured by the illuminance meter 20A. There 100 mW / cm ^2, within the uniformity ratio of 10%, average 0.1~0.25mW / cm ² of illumination intensity, is the numerical value of uniformity is within 16% is realized when measured in a luminometer 20B.

なお、紫外線照射装置１を他の用途に用いる場合に、その用途において高い均斉度が求められる波長に応答感度のピークを有した照度計が上記照度計２０Ａ、２０Ｂとして用いられる。 In addition, when using the ultraviolet irradiation apparatus 1 for another use, the illuminance meter which has the peak of the response sensitivity in the wavelength for which high uniformity is calculated | required in the use is used as said illuminance meter 20A, 20B.

ところで、照射器３が放射する光は、干渉フィルタ４を通してワーク２の照射エリア２Ａに照射されているが、干渉フィルタ４は、図３に示すように、透過特性に入射角度依存性を有しており、光の入射角度が大きくなるほど、矢印Ｘで示すように、透過波長域が短波長側にシフトする。したがって、照射器３から干渉フィルタ４に斜入射してワーク２に到達する光については、透過特性の角度依存により、直入射時よりも短波長の成分が多く含まれることとなる。 By the way, the light emitted from the irradiator 3 is irradiated to the irradiation area 2A of the work 2 through the interference filter 4, and the interference filter 4 has an incident angle dependency on the transmission characteristic as shown in FIG. As the incident angle of light increases, the transmission wavelength region shifts to the short wavelength side as indicated by an arrow X. Therefore, the light that is obliquely incident on the interference filter 4 from the irradiator 3 and reaches the workpiece 2 includes more components having shorter wavelengths than those at the time of direct incidence due to the angle dependence of the transmission characteristics.

このため、照度計が干渉フィルタ４の中心波長λｃに応答感度を有する場合、当該照度計でワーク２の照度分布を測定し、ワーク２の照度分布を均一に調整したとしても、干渉フィルタ４に斜入射することで透過した短波長側の光成分については、照度分布の均一性が担保されておらず、例えば液晶パネルの液晶配向特性に影響が生じたりする。 For this reason, when the illuminance meter has response sensitivity at the center wavelength λc of the interference filter 4, even if the illuminance distribution of the workpiece 2 is measured by the illuminance meter and the illuminance distribution of the workpiece 2 is adjusted uniformly, the interference filter 4 For light components on the short wavelength side transmitted by oblique incidence, the uniformity of the illuminance distribution is not ensured, and for example, the liquid crystal alignment characteristics of the liquid crystal panel are affected.

特に、本実施形態の紫外線照射装置１のように、ワーク２の幅Ｗの外側にも照射器３を配置する構成にあっては、この照射器３からワーク２に届く光は干渉フィルタ４に斜入射して透過した成分を多く含むため、短波長の成分が多くなる。 In particular, in the configuration in which the irradiator 3 is arranged outside the width W of the workpiece 2 as in the ultraviolet irradiation device 1 of the present embodiment, the light that reaches the workpiece 2 from the irradiator 3 enters the interference filter 4. Since many components transmitted through oblique incidence are included, short wavelength components increase.

さらに係る問題は、反射面が干渉膜ミラーとして構成された第１補助反射ミラー２２、及び第２補助反射ミラー２３にも同様に生じる。特に、これら第１補助反射ミラー２２、及び第２補助反射ミラー２３のうち、メタルハライドランプ１１と直交して配置される第２補助反射ミラー２３については、当該メタルハライドランプ１１から入射する光の入射角が大きくなることから、短波長の成分が多くなる。 Such a problem also occurs in the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 whose reflection surfaces are configured as interference film mirrors. In particular, of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23, the second auxiliary reflection mirror 23 disposed orthogonal to the metal halide lamp 11 has an incident angle of light incident from the metal halide lamp 11. Increases the number of short wavelength components.

そこで本実施形態の紫外線照射装置１にあっては、上記の２つの照度計２０Ａ、２０Ｂを備えた照度分布測定用具２１によりワーク２の照度分布を測定し、これらの測定結果に基づいて、第１補助反射ミラー２２、及び第２補助反射ミラー２３の反射特性、並びに吸収フィルタ３０の配置の調整を行うことで、紫外波長域のうち、液晶パネルの液晶配向特性の付与に必要な少なくとも２つの波長について高い均斉度を実現している。 Therefore, in the ultraviolet irradiation device 1 of the present embodiment, the illuminance distribution of the workpiece 2 is measured by the illuminance distribution measuring tool 21 provided with the two illuminance meters 20A and 20B, and based on these measurement results, By adjusting the reflection characteristics of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 and the arrangement of the absorption filter 30, at least two of the ultraviolet wavelength regions necessary for imparting the liquid crystal alignment characteristics of the liquid crystal panel A high degree of uniformity in wavelength is achieved.

図５は、照度計２０Ａ、２０Ｂを用いたワーク２の照度分布調整手順を示すフローチャートである。 FIG. 5 is a flowchart showing the illuminance distribution adjustment procedure of the work 2 using the illuminance meters 20A and 20B.

この図に示すように、先ず、照度分布測定用具２１をワーク２に載置し（ステップＳ１）、応答感度のピーク波長が異なる上記照度計２０Ａ、２０Ｂのそれぞれでワーク２の照射エリア２Ａの照度分布を測定する（ステップＳ２）。そして、両方の照度計２０Ａ、２０Ｂの照度分布に基づいて、第１補助反射ミラー２２、及び第２補助反射ミラー２３の傾斜角度（取付角度）を適宜に調整することで、照射エリア２Ａの全域で必要な照度が得られるように反射角度を調整する（ステップＳ３）。具体的には、上述の通り、ワーク２の照射エリア２Ａの照度分布は、中央部が高く周辺部で低くなる傾向があることから、周辺部の照度を補うように、第１補助反射ミラー２２、及び第２補助反射ミラー２３の傾斜角度を調整する。 As shown in this figure, first, the illuminance distribution measurement tool 21 is placed on the work 2 (step S1), and the illuminance of the irradiation area 2A of the work 2 is measured by each of the illuminance meters 20A and 20B having different response sensitivity peak wavelengths. Distribution is measured (step S2). Then, based on the illuminance distributions of both illuminance meters 20A and 20B, the inclination angle (mounting angle) of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 is appropriately adjusted, so that the entire irradiation area 2A The reflection angle is adjusted so that the necessary illuminance can be obtained (step S3). Specifically, as described above, since the illuminance distribution in the irradiation area 2A of the work 2 tends to be high in the central portion and low in the peripheral portion, the first auxiliary reflection mirror 22 is supplemented to compensate for the illuminance in the peripheral portion. And the inclination angle of the second auxiliary reflecting mirror 23 is adjusted.

このステップＳ３の調整により、照度計２０Ａ、２０Ｂの各波長域について照射エリア２Ａで必要な照度が確保される。 By adjusting in step S3, necessary illuminance is secured in the irradiation area 2A for each wavelength range of the illuminance meters 20A and 20B.

次いで、照度計２０Ａ、２０Ｂのうち、高波長側に応答感度を有する照度計２０Ａで照度分布を測定し（ステップＳ４）、この測定結果に基づいて、照度が高い箇所への直射光Ｋ２の照射を抑え、また照度が低い箇所に向かう直射光Ｋ２の吸収を抑えるように吸収フィルタ３０の配置位置、及び／又は大きさを調整する（ステップＳ５）。 Next, among the illuminance meters 20A and 20B, the illuminance distribution is measured by the illuminance meter 20A having response sensitivity on the high wavelength side (step S4), and based on the measurement result, the direct light K2 is irradiated to the portion where the illuminance is high In addition, the arrangement position and / or the size of the absorption filter 30 is adjusted so as to suppress the absorption of the direct light K2 toward the portion where the illuminance is low (step S5).

このとき、照度分布の均一性の指標としては、照射エリア２Ａの各測定点で測定した照度値の最大と最小を用いて求められる均斉度が用いられる。この均斉度は、照度値の最大を最大照度値、最小を最小照度値とすると次式により示される。 At this time, as an index of the uniformity of the illuminance distribution, the uniformity obtained using the maximum and minimum illuminance values measured at each measurement point in the irradiation area 2A is used. This uniformity is expressed by the following equation where the maximum illuminance value is the maximum illuminance value and the minimum is the minimum illuminance value.

均斉度＝［（最大照度値−最小照度値）／（最大照度値＋最小照度値）×１００％］
本実施形態では、この均斉度が約１０％以下となるように照度分布を調整することとしている。 Uniformity = [(maximum illumination value−minimum illumination value) / (maximum illumination value + minimum illumination value) × 100%]
In the present embodiment, the illuminance distribution is adjusted so that the uniformity is about 10% or less.

ここで、上述の通り、干渉フィルタ４、第１補助反射ミラー２２、及び第２補助反射ミラー２３での透過波長域の短波長側へのシフトによって、これら干渉フィルタ４、第１補助反射ミラー２２、及び第２補助反射ミラー２３での制御対象外の短波長成分が照射エリア２Ａに照射される。この結果、照度計２０Ａ、２０Ｂのうち、高波長側に応答感度を有する照度計２０Ａで照度分布を測定して高い均斉度が得られた状態であっても（ステップＳ５の調整後の状態）、低波長側に応答感度を有する照度計２０Ｂで照度分布を測定すると均斉度が低い状態となる。 Here, as described above, the interference filter 4, the first auxiliary reflection mirror 22, and the second auxiliary reflection mirror 23 shift the transmission wavelength range to the short wavelength side, and thus the interference filter 4 and the first auxiliary reflection mirror 22. The short wavelength component that is not controlled by the second auxiliary reflection mirror 23 is irradiated onto the irradiation area 2A. As a result, even when the illuminance distribution is measured by the illuminance meter 20A having response sensitivity on the high wavelength side of the illuminance meters 20A and 20B and a high degree of uniformity is obtained (the state after adjustment in step S5). When the illuminance distribution is measured with the illuminometer 20B having response sensitivity on the low wavelength side, the uniformity is low.

そこで、照度計２０Ｂで照射エリア２Ａの照度分布を測定して照度が高い箇所を特定し（ステップＳ６）、特定した箇所での照度を抑えるように、第１補助反射ミラー２２、及び第２補助反射ミラー２３の分光反射特性を調整する（ステップＳ７）。 Therefore, the illuminance meter 20B measures the illuminance distribution in the irradiation area 2A to identify a portion with high illuminance (step S6), and the first auxiliary reflection mirror 22 and the second auxiliary so as to suppress the illuminance at the identified portion. The spectral reflection characteristic of the reflection mirror 23 is adjusted (step S7).

具体的には、本実施形態では、第１補助反射ミラー２２、及び第２補助反射ミラー２３の面内において、照度計２０Ａの応答感度に対応する波長域での分光反射特性を維持しつつ、照度計２０Ｂの応答感度に対応する波長域での分光反射特性を、当該照度計２０Ｂによる照度分布の測定結果に基づいて、照度が高い箇所への反射光の光量を抑えるように変更する。 Specifically, in this embodiment, while maintaining the spectral reflection characteristics in the wavelength range corresponding to the response sensitivity of the illuminometer 20A in the plane of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23, The spectral reflection characteristic in the wavelength region corresponding to the response sensitivity of the illuminometer 20B is changed based on the measurement result of the illuminance distribution by the illuminometer 20B so as to suppress the amount of reflected light to the portion with high illuminance.

上述の通り、制御対象外の短波長成分は、第１補助反射ミラー２２、及び第２補助反射ミラー２３への入射角度が大きいほど多くなることから、第１補助反射ミラー２２、及び第２補助反射ミラー２３の面内では、少なくとも入射光の入射角度が大きくなる箇所において、照度計２０Ｂの応答感度に対応する波長域の反射率が小さくなるように（或いはカット（透過）するように）分光反射特性が設定される。 As described above, the short wavelength component that is not to be controlled increases as the incident angle with respect to the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 increases. Therefore, the first auxiliary reflection mirror 22 and the second auxiliary component are increased. In the plane of the reflecting mirror 23, at least at a portion where the incident angle of incident light is increased, the spectral characteristic is reduced so that the reflectance in the wavelength region corresponding to the response sensitivity of the illuminometer 20B is reduced (or cut (transmitted)). A reflection characteristic is set.

また、第１補助反射ミラー２２、及び第２補助反射ミラー２３への入射角度が小さい箇所であっても、干渉フィルタ４への入射角度が大きい光が入射する箇所についても、照度計２０Ｂの応答感度に対応する波長域の反射率が小さくなるように（或いはカット（透過）するように）分光反射特性が設定される。 In addition, even if the incident angle to the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 is small, the response of the illuminometer 20B is also applied to a portion where light having a large incident angle to the interference filter 4 is incident. Spectral reflection characteristics are set so that the reflectance in the wavelength region corresponding to the sensitivity is reduced (or cut (transmitted)).

そして、このように設定した分光反射特性となるように、第１補助反射ミラー２２、及び第２補助反射ミラー２３の反射面に形成する誘電多層膜の膜厚や積層数を代える等して反射特性を調整する。かかる調整により、照度計２０Ｂで測定した場合でも、照射エリア２Ａでの上記均斉度を約２０％以下にできる。 The reflection is performed by changing the film thickness and the number of laminated layers of the dielectric multilayer films formed on the reflection surfaces of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 so that the spectral reflection characteristics set in this way are obtained. Adjust the characteristics. By such adjustment, even when the illuminance meter 20B is used for measurement, the above uniformity in the irradiation area 2A can be reduced to about 20% or less.

なお、第１補助反射ミラー２２、及び第２補助反射ミラー２３の反射面においては、照度計２０Ａの応答感度の波長域に対しては増反射（反射率が高い）するように反射特性が調整されており、これにより、照度計２０Ａで測定される波長域の光量の低下を防止している。 The reflection characteristics of the reflection surfaces of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 are adjusted so as to increase reflection (high reflectance) in the wavelength range of the response sensitivity of the illuminometer 20A. This prevents a decrease in the amount of light in the wavelength range measured by the illuminometer 20A.

このように、上記ステップ７の調整は、第１補助反射ミラー２２、及び第２補助反射ミラー２３の傾斜角度を固定した状態で行われ当該傾斜角度が変更されることがないため、これら第１補助反射ミラー２２、及び第２補助反射ミラー２３が分光反射特性に角度依存を有していても、このときの傾斜角度に応じて適切に、照度計２０Ｂの応答感度の波長域について照度分布が調整される。 Thus, the adjustment in step 7 is performed with the tilt angles of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 fixed, and the tilt angles are not changed. Even if the auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 have an angular dependence on the spectral reflection characteristics, the illuminance distribution is appropriately in the wavelength range of the response sensitivity of the illuminometer 20B according to the tilt angle at this time. Adjusted.

そして、図５のフローチャートに従った調整により、照度計２０Ａ、２０Ｂの両方の応答感度の波長域について照射エリア２Ａでの照度分布を均一にすることができる。これにより、例えば液晶パネルの液晶配向特性の付加といったように、光の波長の影響を受けやすい製造プロセスの光源として、この紫外線照射装置１を好適に用いることができる。 And the illumination distribution in 2 A of irradiation areas can be made uniform about the wavelength range of the response sensitivity of both illuminometers 20A and 20B by adjustment according to the flowchart of FIG. Thereby, this ultraviolet irradiation device 1 can be suitably used as a light source of a manufacturing process that is easily affected by the wavelength of light, such as addition of liquid crystal alignment characteristics of a liquid crystal panel.

なお、図５に示したフローチャートにおいて、吸収フィルタ３０が吸収率（透過率）に入射角依存性を有しないため、ステップＳ４、Ｓ５での吸収フィルタ３０による照度分布の調整を、ステップＳ６、Ｓ７での第１補助反射ミラー２２、及び第２補助反射ミラー２３の分光反射特性の調整の後に行うこともできる。この場合、吸収フィルタ３０としては、照度計２０Ａの応答感度の波長域を吸収する吸収フィルタと、照度計２０Ｂの応答感度の波長域を吸収する吸収フィルタとのそれぞれを用いることができる。すなわち、ステップＳ６、Ｓ７の後に、照度計２０Ａ、及び照度計２０Ｂの両方で照度分布を測定し、照度計２０Ａの測定結果に基づいて当該照度計２０Ａの応答感度の波長域を吸収する吸収フィルタを照度が高い箇所への照射を抑えるように設置し、同様に、照度計２０Ｂの測定結果に基づいて当該照度計２０Ｂの応答感度の波長域を吸収するフ吸収フィルタを照度が高い箇所への照射を抑えるように設置する。 In the flowchart shown in FIG. 5, since the absorption filter 30 has no incident angle dependency on the absorption rate (transmittance), the adjustment of the illuminance distribution by the absorption filter 30 in steps S4 and S5 is performed in steps S6 and S7. It can also be performed after adjusting the spectral reflection characteristics of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 in FIG. In this case, as the absorption filter 30, an absorption filter that absorbs the wavelength range of the response sensitivity of the illuminance meter 20A and an absorption filter that absorbs the wavelength range of the response sensitivity of the illuminance meter 20B can be used. That is, after steps S6 and S7, the illuminance distribution is measured by both the illuminometer 20A and the illuminometer 20B, and the absorption filter absorbs the wavelength range of the response sensitivity of the illuminometer 20A based on the measurement result of the illuminometer 20A. In the same manner, the absorption filter that absorbs the wavelength range of the response sensitivity of the illuminance meter 20B based on the measurement result of the illuminance meter 20B is applied to the high illuminance location. Install to suppress irradiation.

以上説明したように、本実施形態によれば、照射エリア２Ａの周囲に配置され、干渉フィルタ４を通って照射エリア２Ａの外に向かう紫外線を、照射エリア２Ａ内で照度が低い箇所に反射する第１補助反射ミラー２２、及び第２補助反射ミラー２３を備え、干渉フィルタ４を通って照射エリア２Ａを直接照射する紫外線と、第１補助反射ミラー２２、及び第２補助反射ミラー２３で反射された紫外線とで照射エリア２Ａを均一に照射するため、干渉フィルタ４が配置されている場合でも、均一な照度での照射が可能になる。 As described above, according to the present embodiment, the ultraviolet light that is disposed around the irradiation area 2A and goes out of the irradiation area 2A through the interference filter 4 is reflected to a portion with low illuminance in the irradiation area 2A. The first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 are provided. The ultraviolet rays that directly irradiate the irradiation area 2A through the interference filter 4 and the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 are reflected. Since the irradiation area 2A is uniformly irradiated with the ultraviolet light, irradiation with uniform illuminance is possible even when the interference filter 4 is arranged.

特に本実施形態によれば、照射器３の反射ミラー１２から反射された紫外線が通るフィルタを干渉フィルタ４とすることで所望の波長域の光だけを効率良く照射することができる。 In particular, according to the present embodiment, the interference filter 4 is used as the filter through which the ultraviolet light reflected from the reflection mirror 12 of the irradiator 3 passes, so that only light in a desired wavelength region can be efficiently irradiated.

また本実施形態によれば、照射器３の反射ミラー１２から反射された紫外線が通るフィルタに吸収フィルタ３０を含むことで、照度が高い箇所への照射光量を適切に抑えることができる。 Moreover, according to this embodiment, the light quantity irradiated to the location with high illuminance can be suppressed appropriately by including the absorption filter 30 in the filter through which the ultraviolet rays reflected from the reflection mirror 12 of the irradiator 3 pass.

特に、吸収フィルタ３０として、吸収特性（透過特性）に入射角依存性を有しないものを用いることで、当該吸収フィルタ３０が照射器３と照射エリア２Ａの間に介在しても、この吸収フィルタ３０に斜入射した光によって照射エリア２Ａでの均斉度が劣化することもない。 In particular, by using an absorption filter 30 that does not have an incident angle dependency in absorption characteristics (transmission characteristics), even if the absorption filter 30 is interposed between the irradiator 3 and the irradiation area 2A, this absorption filter 30 is used. The uniformity in the irradiation area 2 </ b> A is not deteriorated by the light obliquely incident on 30.

また本実施形態によれば、第１補助反射ミラー２２、及び第２補助反射ミラー２３を干渉膜ミラーから構成し、当該干渉膜ミラーが上記照度計２０Ａ、２０Ｂの各応答感度の波長域ごとに異なる反射特性を有する構成とした。 Moreover, according to this embodiment, the 1st auxiliary | assistant reflective mirror 22 and the 2nd auxiliary | assistant reflective mirror 23 are comprised from an interference film mirror, and the said interference film mirror is for every wavelength range of each response sensitivity of the said illuminance meters 20A and 20B. The configuration has different reflection characteristics.

これにより、干渉フィルタ４、第１補助反射ミラー２２、及び第２補助反射ミラー２３への斜入射に起因する短波長シフトによって生じた短波長の光をカット（透過、或いは低反射）する反射特性を第１補助反射ミラー２２、及び第２補助反射ミラー２３に持たせることで、当該短波長の光による照射エリア２Ａの均斉度の劣化が抑えられる。 Thereby, the reflection characteristic of cutting (transmitting or low-reflecting) short-wavelength light caused by a short-wavelength shift caused by oblique incidence on the interference filter 4, the first auxiliary reflection mirror 22, and the second auxiliary reflection mirror 23. Is provided to the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23, the deterioration of the uniformity of the irradiation area 2A due to the light having the short wavelength can be suppressed.

なお、上述した実施形態は、あくまでも本発明の一態様を例示したものであって、本発明の趣旨を逸脱しない範囲で任意に変形及び応用が可能である。 The above-described embodiment is merely an example of one aspect of the present invention, and can be arbitrarily modified and applied without departing from the spirit of the present invention.

例えば、上述した実施形態では、紫外線照射装置１が２つの照度計を備える場合を例示したが、これに限らず、応答感度のピーク波長が互いに異なる３以上の照度計を備え、それぞれで照射領域内の照度分布を測定し、それぞれの照度分布の測定結果で均一な照度分布となるように調整しても良い。 For example, in the above-described embodiment, the case where the ultraviolet irradiation device 1 includes two illuminance meters is illustrated. However, the present invention is not limited thereto, and three or more illuminance meters having different peak wavelengths of response sensitivity are provided. It is also possible to measure the illuminance distribution in the illuminant and adjust the illuminance distribution so that the illuminance distribution is uniform according to the measurement result of each illuminance distribution.

また例えば、上述した実施形態では、干渉フィルタ４を各照射器３の底面を覆うように設けた上で、吸収フィルタ３０を照射エリア２Ａの照度分布に基づいて、高い照度の箇所への照射を抑えるように干渉フィルタ４の底面（照射エリア２Ａとの対向面）に部分的に配置する構成とした。しかしながら、これに限らず、吸収フィルタ３０を各照射器３の底面を覆うように設けた上で、干渉フィルタ４を吸収フィルタ３０の上面又は底面に部分的に配置する構成としても良い。 Further, for example, in the above-described embodiment, the interference filter 4 is provided so as to cover the bottom surface of each irradiator 3, and the absorption filter 30 is irradiated to a portion with high illuminance based on the illuminance distribution of the irradiation area 2A. It was set as the structure arrange | positioned partially on the bottom face (facing surface 2A of irradiation areas) of the interference filter 4 so that it may suppress. However, the configuration is not limited to this, and the interference filter 4 may be partially disposed on the top surface or the bottom surface of the absorption filter 30 after the absorption filter 30 is provided so as to cover the bottom surface of each irradiator 3.

また、例えば本実施形態では、第１補助反射ミラー２２、及び第２補助反射ミラー２３をメタルダイクロミラーとし、誘電多層膜の素性を変更することで、照度計２０Ｂの応答感度の波長域の光の反射を抑える構成とした。 Further, for example, in the present embodiment, the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23 are metal dichroic mirrors, and the characteristics of the dielectric multilayer film are changed, so that the light in the wavelength range of the response sensitivity of the illuminometer 20B can be obtained. The reflection is suppressed.

しかしながら、これに限らず、例えばアルミニウム材から成る金属ミラーとし、反射面に照度計２０Ｂの応答感度の波長域の光を吸収する吸収フィルタを設けることで光の反射を抑える構成としても良い。 However, the present invention is not limited to this. For example, a metal mirror made of an aluminum material may be used, and a reflection filter may be provided to suppress light reflection by providing an absorption filter that absorbs light in the wavelength range of response sensitivity of the illuminometer 20B.

また例えば本実施形態において、第１補助反射ミラー２２、及び第２補助反射ミラー２３の反射面の分光反射特性を変えるに際して、反射面内の必要な箇所について部分的に反射率を変えて分光反射特性を変える構成としても良い。 Further, for example, in the present embodiment, when changing the spectral reflection characteristics of the reflection surfaces of the first auxiliary reflection mirror 22 and the second auxiliary reflection mirror 23, spectral reflection is performed by partially changing the reflectance of necessary portions in the reflection surface. It is good also as a structure which changes a characteristic.

１紫外線照射装置
２ワーク
２Ａ照射エリア
４干渉フィルタ（フィルタ）
１１メタルハライドランプ（光源）
１２反射ミラー
２０Ａ、２０Ｂ照度計
２１照度分布測定用具
２２第１補助反射ミラー
２３第２補助反射ミラー
３０吸収フィルタ（フィルタ） 1 UV irradiation device 2 Work 2A Irradiation area 4 Interference filter (filter)
11 Metal halide lamp (light source)
DESCRIPTION OF SYMBOLS 12 Reflection mirror 20A, 20B Illuminance meter 21 Illuminance distribution measuring tool 22 1st auxiliary reflection mirror 23 2nd auxiliary reflection mirror 30 Absorption filter (filter)

Claims

A light source that emits ultraviolet light;
A semi-elliptical cylindrical reflection mirror that reflects ultraviolet rays emitted from the light source;
An interference filter disposed between the light source and the irradiation area, through which the ultraviolet rays reflected from the reflection mirror pass;
An auxiliary reflection mirror provided at an inclination angle that is arranged around the irradiation area and reflects ultraviolet rays that pass through the interference filter and go out of the irradiation area to a portion having a low illuminance within the irradiation area. ,
In the plane of the auxiliary reflecting mirror,
When the irradiation area is measured with an illuminometer having a response sensitivity peak on the shorter wavelength side than the center wavelength of the interference filter, it is set to a spectral reflection characteristic that suppresses reflected light that irradiates a place with high illuminance,
Irradiation in a wavelength range corresponding to the center wavelength of the interference filter and the response sensitivity of the illuminometer, with ultraviolet light directly illuminating the irradiation area through the interference filter and ultraviolet light reflected by the auxiliary reflection mirror An ultraviolet irradiation device characterized by uniformly irradiating an area.

  A light source that emits ultraviolet light;
  A semi-elliptical cylindrical reflection mirror that reflects ultraviolet rays emitted from the light source;
  An interference filter disposed between the light source and an irradiation area, through which ultraviolet rays reflected from the reflection mirror pass, and an absorption filter;
  Auxiliary reflection provided at an inclination angle that is arranged around the irradiation area and reflects ultraviolet rays that pass through the interference filter and the absorption filter to the outside of the irradiation area to a portion with low illuminance in the irradiation area. A mirror, and
  The absorption filter is
  When the irradiation area is measured with a first illuminometer having a response sensitivity peak at the center wavelength of the interference filter, it is arranged at a position or size that absorbs direct light that irradiates a portion with high illuminance. Or, it is arranged at a position or size that suppresses the absorption of direct light that irradiates a place with low illuminance,
  In the plane of the auxiliary reflecting mirror,
  When the irradiation area is measured with a second illuminometer having a response sensitivity peak on the shorter wavelength side than the first illuminometer, it is set to a spectral reflection characteristic that suppresses reflected light that irradiates a portion with high illuminance. ,
  Response sensitivity of each of the first illuminance meter and the second illuminance meter with ultraviolet rays that directly irradiate the irradiation area through the interference filter and the absorption filter and ultraviolet rays reflected by the auxiliary reflection mirror Irradiate the irradiation area uniformly in the wavelength range corresponding to
  An ultraviolet irradiation device characterized by that.

The interference filter and the absorption filter are:
Between the light source and the irradiation area are arranged one above the other ,
The absorption filter is partially disposed in the area of the interference filter, or the interference filter is partially disposed in the area of the absorption filter. UV irradiation device.

UV irradiation device according to any one of claims 1 to 3, characterized in that the reflecting surface of the auxiliary reflecting mirror is formed of aluminum material.

The ultraviolet irradiation device according to claim 1, wherein the auxiliary reflection mirror is an interference film mirror.

6. The ultraviolet irradiation apparatus according to claim 1, wherein the auxiliary reflection mirror includes an interference film mirror having different reflection characteristics for each of a plurality of wavelengths.

In the plane of the auxiliary reflecting mirror,
Spectral reflection characteristics that reduce the reflectance in the wavelength region corresponding to the response sensitivity of the second illuminometer are set according to the incident angle of the incident light on the surface of the auxiliary reflecting mirror.
The ultraviolet irradiation device according to claim 5 or 6.

In the plane of the auxiliary reflecting mirror,
Spectral reflection characteristics that reduce the reflectance in the wavelength region corresponding to the response sensitivity of the second illuminometer are set according to the incident angle of the incident light to the interference filter.
The ultraviolet irradiation device according to claim 5, wherein

A light source that emits ultraviolet light;
A semi-elliptical cylindrical reflection mirror that reflects ultraviolet rays emitted from the light source;
An interference filter disposed between the light source and the irradiation area, through which ultraviolet rays reflected from the reflection mirror pass, and an absorption filter ;
An auxiliary reflection mirror that is arranged around the irradiation area and reflects ultraviolet rays that pass through the interference filter and the absorption filter to the outside of the irradiation area, to a place where illuminance is low in the irradiation area, and
In the method of adjusting the illuminance of the ultraviolet irradiation device that uniformly irradiates the irradiation area with the ultraviolet light that directly irradiates the irradiation area through the interference filter and the absorption filter, and the ultraviolet light reflected by the auxiliary reflection mirror,
The illuminance distribution in the irradiation area is measured by each of the first illuminometer having response sensitivity at the center wavelength of the interference filter and the second illuminometer having a response sensitivity peak on the shorter wavelength side than the first illuminometer. And , based on the measurement results of the respective illuminance distribution , adjusting the tilt angle of the auxiliary reflection mirror to a tilt angle at which necessary illuminance can be obtained over the entire irradiation area;
The illuminance distribution is measured with the first illuminometer, and based on the measurement result, the absorption filter is arranged at a position that absorbs direct light that irradiates a portion with high illuminance or in a size, or the illuminance is low. Placing the absorption filter in a position or size that suppresses absorption of direct light that irradiates the location; and
Measuring the illuminance distribution with the second illuminometer, and setting the spectral reflection characteristic of the auxiliary reflection mirror to a spectral reflection characteristic that suppresses reflected light that irradiates a portion with high illuminance based on the measurement result;
An illuminance adjustment method comprising: