JP4919549B2 - 不揮発性メモリ及び半導体装置 - Google Patents
不揮発性メモリ及び半導体装置 Download PDFInfo
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- JP4919549B2 JP4919549B2 JP2001220770A JP2001220770A JP4919549B2 JP 4919549 B2 JP4919549 B2 JP 4919549B2 JP 2001220770 A JP2001220770 A JP 2001220770A JP 2001220770 A JP2001220770 A JP 2001220770A JP 4919549 B2 JP4919549 B2 JP 4919549B2
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- Japan
- Prior art keywords
- region
- memory
- pinning
- floating gate
- memory transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
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- 239000011229 interlayer Substances 0.000 description 3
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001220770A JP4919549B2 (ja) | 2000-07-21 | 2001-07-23 | 不揮発性メモリ及び半導体装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000221436 | 2000-07-21 | ||
| JP2000-221436 | 2000-07-21 | ||
| JP2000221436 | 2000-07-21 | ||
| JP2001220770A JP4919549B2 (ja) | 2000-07-21 | 2001-07-23 | 不揮発性メモリ及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002100690A JP2002100690A (ja) | 2002-04-05 |
| JP2002100690A5 JP2002100690A5 (https=) | 2008-08-07 |
| JP4919549B2 true JP4919549B2 (ja) | 2012-04-18 |
Family
ID=26596479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001220770A Expired - Fee Related JP4919549B2 (ja) | 2000-07-21 | 2001-07-23 | 不揮発性メモリ及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4919549B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102385951B1 (ko) * | 2018-02-23 | 2022-04-14 | 에스케이하이닉스 시스템아이씨 주식회사 | 프로그램 효율이 증대되는 원 타임 프로그래머블 메모리 및 그 제조방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2870478B2 (ja) * | 1996-04-25 | 1999-03-17 | 日本電気株式会社 | 不揮発性半導体記憶装置及びその動作方法 |
| JPH11150198A (ja) * | 1997-11-18 | 1999-06-02 | Semiconductor Energy Lab Co Ltd | 不揮発性メモリ及び電子機器 |
-
2001
- 2001-07-23 JP JP2001220770A patent/JP4919549B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2002100690A (ja) | 2002-04-05 |
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